CN110011621A - 一种集成异向与多尔蒂结构的高回退范围射频功率放大器 - Google Patents
一种集成异向与多尔蒂结构的高回退范围射频功率放大器 Download PDFInfo
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- CN110011621A CN110011621A CN201910242792.6A CN201910242792A CN110011621A CN 110011621 A CN110011621 A CN 110011621A CN 201910242792 A CN201910242792 A CN 201910242792A CN 110011621 A CN110011621 A CN 110011621A
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- circuit
- power amplifier
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- 238000012545 processing Methods 0.000 claims abstract description 22
- 230000003321 amplification Effects 0.000 claims abstract description 8
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 8
- 230000003044 adaptive effect Effects 0.000 claims description 19
- 230000003750 conditioning effect Effects 0.000 claims description 10
- 230000005611 electricity Effects 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 238000005086 pumping Methods 0.000 claims description 4
- 238000013461 design Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000004891 communication Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000009798 acute exacerbation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001447 compensatory effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
Description
电容C<sub>1</sub> | 22pf |
电感L<sub>S</sub> | 35nH |
电容C<sub>2</sub> | 8.8pf |
电阻R<sub>1</sub> | 510Ω |
电阻R<sub>2</sub> | 2100Ω |
电阻R<sub>3</sub> | 510Ω |
电容C<sub>p</sub> | 5pf |
补偿电压V<sub>f</sub> | 2.6V |
Claims (5)
Priority Applications (1)
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CN201910242792.6A CN110011621B (zh) | 2019-03-28 | 2019-03-28 | 一种集成异向与多尔蒂结构的高回退范围射频功率放大器 |
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CN201910242792.6A CN110011621B (zh) | 2019-03-28 | 2019-03-28 | 一种集成异向与多尔蒂结构的高回退范围射频功率放大器 |
Publications (2)
Publication Number | Publication Date |
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CN110011621A true CN110011621A (zh) | 2019-07-12 |
CN110011621B CN110011621B (zh) | 2023-07-28 |
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CN201910242792.6A Active CN110011621B (zh) | 2019-03-28 | 2019-03-28 | 一种集成异向与多尔蒂结构的高回退范围射频功率放大器 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110595541A (zh) * | 2019-09-22 | 2019-12-20 | 江苏传艺科技股份有限公司 | 一种用于5g通信低噪声功率放大器的自动检测系统 |
CN110708029A (zh) * | 2019-08-22 | 2020-01-17 | 杭州电子科技大学温州研究院有限公司 | 基于非等长传输线的双频带异向功率放大器及其设计方法 |
WO2021227902A1 (zh) * | 2020-05-09 | 2021-11-18 | 华为技术有限公司 | 基于多相位的多合体功率放大器控制方法和装置 |
WO2021244556A1 (zh) * | 2020-06-03 | 2021-12-09 | 中兴通讯股份有限公司 | 一种功放发射机 |
Citations (13)
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CN1529935A (zh) * | 2000-12-29 | 2004-09-15 | �������ɭ | 用于高效率的信号发射机的三重E类Doherty放大器拓扑 |
CN1714500A (zh) * | 2002-12-19 | 2005-12-28 | 艾利森电话股份有限公司 | 复合放大器结构 |
US20060103466A1 (en) * | 2004-11-18 | 2006-05-18 | Shah Tushar R | High efficiency doherty amplifier with a segmented main amplifier |
US20070139106A1 (en) * | 2005-12-06 | 2007-06-21 | Harris Corporation | Modified Doherty amplifier |
US20080036533A1 (en) * | 2006-08-11 | 2008-02-14 | Lg-Nortel Co., Ltd. | Multi-path doherty amplifier and control method of a multi-path doherty amplifier |
CN102237852A (zh) * | 2010-04-23 | 2011-11-09 | Nxp股份有限公司 | 功率放大器 |
US20130241639A1 (en) * | 2012-03-16 | 2013-09-19 | Infineon Technologies North America Corp. | Impedance spreading wideband doherty amplifier circuit with peaking impedance absorption |
CN104054260A (zh) * | 2011-12-15 | 2014-09-17 | 爱立信(中国)通信有限公司 | Doherty功率放大设备和方法 |
CN105493399A (zh) * | 2013-06-27 | 2016-04-13 | 宏动有限公司 | 使用复合功率放大方法的线性复合发射机 |
US20160218681A1 (en) * | 2014-05-08 | 2016-07-28 | Telefonaktiebolaget L M Ericsson (Publ) | Amplifier circuit and method |
CN106452370A (zh) * | 2016-10-12 | 2017-02-22 | 杭州电子科技大学 | 一种基于非对称结构的高回退Doherty功率放大器及其实现方法 |
CN106470015A (zh) * | 2015-08-20 | 2017-03-01 | 中兴通讯股份有限公司 | 对称多赫蒂Doherty功放电路装置及功率放大器 |
CN107547056A (zh) * | 2016-06-28 | 2018-01-05 | 英飞凌科技股份有限公司 | 放大射频信号的方法和doherty‑chireix 组合放大器 |
-
2019
- 2019-03-28 CN CN201910242792.6A patent/CN110011621B/zh active Active
Patent Citations (13)
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CN1529935A (zh) * | 2000-12-29 | 2004-09-15 | �������ɭ | 用于高效率的信号发射机的三重E类Doherty放大器拓扑 |
CN1714500A (zh) * | 2002-12-19 | 2005-12-28 | 艾利森电话股份有限公司 | 复合放大器结构 |
US20060103466A1 (en) * | 2004-11-18 | 2006-05-18 | Shah Tushar R | High efficiency doherty amplifier with a segmented main amplifier |
US20070139106A1 (en) * | 2005-12-06 | 2007-06-21 | Harris Corporation | Modified Doherty amplifier |
US20080036533A1 (en) * | 2006-08-11 | 2008-02-14 | Lg-Nortel Co., Ltd. | Multi-path doherty amplifier and control method of a multi-path doherty amplifier |
CN102237852A (zh) * | 2010-04-23 | 2011-11-09 | Nxp股份有限公司 | 功率放大器 |
CN104054260A (zh) * | 2011-12-15 | 2014-09-17 | 爱立信(中国)通信有限公司 | Doherty功率放大设备和方法 |
US20130241639A1 (en) * | 2012-03-16 | 2013-09-19 | Infineon Technologies North America Corp. | Impedance spreading wideband doherty amplifier circuit with peaking impedance absorption |
CN105493399A (zh) * | 2013-06-27 | 2016-04-13 | 宏动有限公司 | 使用复合功率放大方法的线性复合发射机 |
US20160218681A1 (en) * | 2014-05-08 | 2016-07-28 | Telefonaktiebolaget L M Ericsson (Publ) | Amplifier circuit and method |
CN106470015A (zh) * | 2015-08-20 | 2017-03-01 | 中兴通讯股份有限公司 | 对称多赫蒂Doherty功放电路装置及功率放大器 |
CN107547056A (zh) * | 2016-06-28 | 2018-01-05 | 英飞凌科技股份有限公司 | 放大射频信号的方法和doherty‑chireix 组合放大器 |
CN106452370A (zh) * | 2016-10-12 | 2017-02-22 | 杭州电子科技大学 | 一种基于非对称结构的高回退Doherty功率放大器及其实现方法 |
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Title |
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H. JANG ET AL.: "RF-Input Self-Outphasing Doherty–Chireix Combined Amplifier", IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, vol. 64, pages 4518 - 4534 * |
胡哲彬: "无线通信发射机效率提升技术研究", 电子科技大学博士论文 * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110708029A (zh) * | 2019-08-22 | 2020-01-17 | 杭州电子科技大学温州研究院有限公司 | 基于非等长传输线的双频带异向功率放大器及其设计方法 |
CN110708029B (zh) * | 2019-08-22 | 2023-05-02 | 杭州电子科技大学温州研究院有限公司 | 基于非等长传输线的双频带异向功率放大器及其设计方法 |
CN110595541A (zh) * | 2019-09-22 | 2019-12-20 | 江苏传艺科技股份有限公司 | 一种用于5g通信低噪声功率放大器的自动检测系统 |
CN110595541B (zh) * | 2019-09-22 | 2021-04-13 | 江苏传艺科技股份有限公司 | 一种用于5g通信低噪声功率放大器的自动检测系统 |
WO2021227902A1 (zh) * | 2020-05-09 | 2021-11-18 | 华为技术有限公司 | 基于多相位的多合体功率放大器控制方法和装置 |
WO2021244556A1 (zh) * | 2020-06-03 | 2021-12-09 | 中兴通讯股份有限公司 | 一种功放发射机 |
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Effective date of registration: 20240407 Address after: Room 2501, Block C, Qingkong Innovation Base, No. 529, Nanzhonghuan Street, Taiyuan Xuefu Park, Taiyuan Comprehensive Reform Demonstration Zone, Taiyuan City, Shanxi Province, 030000 Patentee after: Bohao Technology Co.,Ltd. Country or region after: China Address before: Room 101, 3rd and 4th floors, Building B, and 1st floor, Building A, Zhejiang Yungu, No. 2003 Nanyang Avenue, Yaoxi Street, Longwan District, Wenzhou City, Zhejiang Province, 325000 (self declared) Patentee before: HANGZHOU DIANZI UNIVERSITY WENZHOU RESEARCH INSTITUTE Co.,Ltd. Country or region before: China Patentee before: HANGZHOU DIANZI University |