CN109970035A - 一种α-氮化硅粉体的制备方法 - Google Patents

一种α-氮化硅粉体的制备方法 Download PDF

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CN109970035A
CN109970035A CN201910268498.2A CN201910268498A CN109970035A CN 109970035 A CN109970035 A CN 109970035A CN 201910268498 A CN201910268498 A CN 201910268498A CN 109970035 A CN109970035 A CN 109970035A
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杨德安
高春兰
王硕
曹利生
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Tianjin University
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Abstract

本发明是一种α‑氮化硅粉体的制备方法,将掺杂Cr2O3粉体的硅粉进行球磨,添加氮化硅磨球和酒精;放入球磨机中进行球磨,然后球磨后的Cr2O3的硅粉进行抽滤,去除硅粉中的酒精;将抽滤过后的粉体在真空干燥箱中进行烘干,去除残留的酒精;将上述真空干燥后的样品进行研磨过筛,获得颗粒均匀的粉体;将上述研磨后的掺杂Cr2O3的硅粉体放入高温管式炉中,抽真空,通入氮氢混合气,以小于等于5℃/min升至800℃,再以小于等于3℃/min升至1300‑1400℃,并保温2‑4h;即得到氮化硅粉体。本发明具有氮化温度低、成本低、氮化周期短;所制备的粉体中α‑Si3N4相高达96wt%,粒径小且部分为纤维状。

Description

一种α-氮化硅粉体的制备方法
技术领域
本发明涉及陶瓷材料技术领域,具体是一种α-氮化硅(α-Si3N4)粉体的制备方法。
背景技术
氮化硅(Si3N4)陶瓷材料作为一种传统的结构陶瓷材料,具有许多优良的物理和化学性能,高硬度、高强度,良好的断裂韧性,高温稳定性、化学稳定性和抗热震性能,可作为轴承、涡轮转子、天线罩等,广泛应用于汽车、冶金、航天等领域。Si3N4陶瓷由于具有高的力学性能和高的理论热导率,被认为是一种极具潜力的电子封装陶瓷基板的替代材料之一。Si3N4纳米线具有光致发光性能,适用于高温环境和辐射环境。
但是由于其成本高,限制了它的应用。成本高的原因有很多:一方面高质量的氮化硅粉末原料价格高;另一方面,前期氮化和后续烧结过程要在保护气氛环境下,有的生产甚至在压力状态下进行,从原料到工艺都比其他陶瓷材料如Al2O3和ZrO2复杂。
Si3N4粉体的制备方法有很多种,其中直接氮化法工艺简单,成本较低,是工业制备氮化硅粉体的一种传统方法,但是这种制备方法周期长,效率低,不利于生产。常用的氮化硅粉体有两种,一种是α-Si3N4,一种是β-Si3N4,其中α-Si3N4烧结性能较好,通过液相烧结可以获得高致密度和高β-Si3N4相的陶瓷。但原料中氧的存在,会影响氮化硅晶粒的形成,如何避免氧的引入和去除氧是难点问题。因此寻求高效率、经济并能批量生产高质量的α-Si3N4粉体具有重要意义。
发明内容
本发明的目的在于提供一种α-Si3N4粉体的制备方法,提供一种基于直接氮化法、氮化温度低、成本低、氮化周期短、过程简单且产率高的一种方法。
为实现上述目的,本发明提供如下技术方案:
一种α-Si3N4粉体的制备方法,包括以下步骤:
1)、将掺杂2.5-8wt%Cr2O3粉体的硅粉进行球磨,将球磨后的粉体放入氮化硅球磨罐中,添加氮化硅磨球和酒精;放入球磨机中进行球磨,转速300-400r/min,球磨时间2-4h;
2)、将上述球磨后的Cr2O3的硅粉进行抽滤,去除硅粉中的酒精;之后,将上述抽滤过后的粉体在真空干燥箱中进行烘干,去除残留的酒精,温度40-80℃,烘干时间2-4h;将上述真空干燥后的样品进行研磨过筛,获得颗粒均匀的粉体;
3)、将上述研磨后的掺杂Cr2O3的硅粉体放入高温管式炉中,抽真空,通入氮氢混合气,以小于等于5℃/min升至800℃,再以小于等于3℃/min升至1300-1400℃,并保温2-4h;即得到氮化硅粉体。
所述步骤1)中粉体:磨球:酒精质量比为1:(3-6):1.5。
所述步骤2)真空干燥后的样品进行研磨过40-70目筛。
所述步骤3)抽真空3-5次。
所述步骤(1)中所用的微米硅粉的颗粒尺寸为1-20μm,纯度大于等于99.9%。
所用Cr2O3粉体纯度为分析纯。乙醇纯度为分析纯。
所述步骤是(3)中氮氢混合气:氮气92-95%,氢气5-8%。
本发明的制备材料的相组成为主要晶相α-Si3N4和少量β-Si3N4,微观形貌为小于1μm的颗粒和少量纤维;相组成中没有Si2N2O相。
与现有的技术相比,本发明的有益效果是:
1、本发明采用Cr2O3粉体为催化剂,在1300-1400℃保温2-4h完全氮化。所以本发明降低了氮化温度、缩短了氮化时间并且提高了产率。
2、本发明采用氮氢混合气和石墨纸基底,引进了氢和碳,创建了一个更加还原的气氛利于氧的消除。
3、本发明采用Cr2O3粉体为催化剂,催化硅粉的氮化,得到粒径小于1μm的氮化硅颗粒和几到十几微米的纤维,且α-Si3N4含量可达96wt%。且粉体纯度高、粒径小且部分为纤维状。
4、本发明在反应过程中引入少量Cr2O3粉体,无其他杂质,产品纯度高。
5、本发明所用原料来源广泛和价格低廉,操作步骤简单,容易控制,生产成本低,具有很大的产业化前景。
附图说明
图1(a):在实施例1中硅粉在1300℃氮化2h后的XRD谱图。
图1(b):在实施例2中硅粉在1350℃氮化2h后的XRD谱图。
图1(c):在实施例3中硅粉在1400℃氮化4h后的XRD谱图。
图1(d):在实施例4中硅粉在1400℃氮化4h后的XRD谱图。
图2(a):在实施例1中硅粉在1300℃氮化2h后的SEM图片。
图2(b):在实施例2中硅粉在1350℃氮化2h后的SEM图片。
图2(c):在实施例3中硅粉在1400℃氮化4h后的SEM图片。
图2(d):在实施例4中硅粉在1400℃氮化4h后的SEM图片。
具体实施方式
下面结合附图和具体实施方式对本发明作进一步的描述。
为避免重复,先将本具体实施方式所涉及的原料统一描述如下,实施例中不在赘述:
所述硅粉颗粒尺寸为1-20μm,纯度大于等于99.9%。所述Cr2O3粉体纯度为分析纯。所述乙醇纯度为分析纯。所述氮氢混合气:氮气92-95%,氢气5-8%。
实施例1
1)、Cr2O3与Si粉按质量比2.5:97.5称量原料,将掺杂2.5wt%Cr2O3粉体的硅粉进行球磨,将球磨后的的粉体放入氮化硅球磨罐中,添加氮化硅磨球和酒精,其中粉体:磨球:酒精质量比为1:3:1.5。放入行星式球磨机中进行球磨,转速300r/min,球磨时间4h。
2)、将上述球磨后的掺杂2.5wt%Cr2O3的硅粉进行抽滤,去除硅粉中的酒精;之后,将上述抽滤过后的粉体在真空干燥箱中进行烘干,去除残留的酒精,温度40℃,烘干时间4h。将上述真空干燥后的样品进行研磨过40目筛,获得颗粒均匀的粉体,以备进行后续氮化实验。
3)、将上述研磨后的掺杂2.5wt%Cr2O3的粉体放入高温管式炉中,抽真空3次,通入氮氢混合气,以5℃/min升至800℃,再以3℃/min升至1300℃,并保温2h。即得α-Si3N4粉体。其XRD图如图1(a),SEM图如图2(a)。
实施例2
1)、Cr2O3与Si粉按质量比2.5:97.5称量原料,将掺杂2.5wt%Cr2O3粉体的硅粉进行球磨,将球磨后的的粉体放入氮化硅球磨罐中,添加氮化硅磨球和酒精,其中粉体:磨球:酒精质量比为1:6:1.5。放入行星式球磨机中进行球磨,转速400r/min,球磨时间2h。
2)、将上述球磨后的掺杂2.5wt%Cr2O3的硅粉进行抽滤,去除硅粉中的酒精;之后,将上述抽滤过后的粉体在真空干燥箱中进行烘干,去除残留的酒精,温度80℃,烘干时间2h。将上述真空干燥后的样品进行研磨过40目筛,获得颗粒均匀的粉体,以备进行后续氮化实验。
3)、将上述研磨后的掺杂2.5wt%Cr2O3的粉体放入高温管式炉中,抽真空5次,通入氮氢混合气,以5℃/min升至800℃,再以3℃/min升至1350℃,并保温2h。即得到α-Si3N4粉体。其XRD图如图1(b),SEM图如图2(b)。
实施例3
1)、Cr2O3与Si粉按质量比2.5:97.5称量原料,将掺杂2.5wt%Cr2O3粉体的硅粉进行球磨,将球磨后的的粉体放入氮化硅球磨罐中,添加氮化硅磨球和酒精,其中粉体:磨球:酒精质量比为1:4:1.5。放入行星式球磨机中进行球磨,转速400r/min,球磨时间2h。
2)、将上述球磨后的掺杂2.5wt%Cr2O3的硅粉进行抽滤,去除硅粉中的酒精;之后,将上述抽滤过后的粉体在真空干燥箱中进行烘干,去除残留的酒精,温度80℃,烘干时间2h。将上述真空干燥后的样品进行研磨过70目筛,获得颗粒均匀的粉体,以备进行后续氮化实验。
3)、将上述研磨后的掺杂2.5wt%Cr2O3的粉体放入高温管式炉中,抽真空5次,通入氮氢混合气,以5℃/min升至800℃,再以3℃/min升至1400℃,并保温4h。即得到α-Si3N4粉体。其XRD图如图1(c),SEM图如图2(c)。
实施例4
1)、Cr2O3与Si粉按质量比8:92称量原料,将掺杂8wt%Cr2O3粉体的硅粉进行球磨,将球磨后的的粉体放入氮化硅球磨罐中,添加氮化硅磨球和酒精,其中粉体:磨球:酒精质量比为1:3:1.5。放入行星式球磨机中进行球磨,转速400r/min,球磨时间2h。
2)、将上述球磨后的掺杂8wt%Cr2O3的硅粉进行抽滤,去除硅粉中的酒精;之后,将上述抽滤过后的粉体在真空干燥箱中进行烘干,去除残留的酒精,温度80℃,烘干时间2h。将上述真空干燥后的样品进行研磨过50目筛,获得颗粒均匀的粉体,以备进行后续氮化实验。
3)、将上述研磨后的掺杂8wt%Cr2O3的粉体放入高温管式炉中,抽真空5次,通入氮氢混合气,以5℃/min升至800℃,再以3℃/min升至1400℃,并保温4h。即得到α-Si3N4粉体。其XRD图如图1(d),SEM图如图2(d)。
本发明公开和提出的一种α-氮化硅粉体的制备方法,本领域技术人员可通过借鉴本文内容,适当改变条件路线等环节实现,尽管本发明的方法和制备技术已通过较佳实施例子进行了描述,相关技术人员明显能在不脱离本发明内容、精神和范围内对本文所述的方法和技术路线进行改动或重新组合,来实现最终的制备技术。特别需要指出的是,所有相类似的替换和改动对本领域技术人员来说是显而易见的,他们都被视为包括在本发明精神、范围和内容中。

Claims (8)

1.一种α-氮化硅粉体的制备方法,其特征是包括以下步骤:
1)、将掺杂2.5-8wt%Cr2O3粉体的硅粉进行球磨,将球磨后的粉体放入氮化硅球磨罐中,添加氮化硅磨球和酒精;放入球磨机中进行球磨,转速300-400r/min,球磨时间2-4h;
2)、将上述球磨后的Cr2O3的硅粉进行抽滤,去除硅粉中的酒精;之后,将上述抽滤过后的粉体在真空干燥箱中进行烘干,去除残留的酒精,温度40-80℃,烘干时间2-4h;将上述真空干燥后的样品进行研磨过筛,获得颗粒均匀的粉体;
3)、将上述研磨后的掺杂Cr2O3的硅粉体放入高温管式炉中,抽真空,通入氮氢混合气,以小于等于5℃/min升至800℃,再以小于等于3℃/min升至1300-1400℃,并保温2-4h;即得到氮化硅粉体。
2.如权利要求1所述的方法,其特征是所述步骤1)中粉体:磨球:酒精质量比为1:(3-6):1.5。
3.如权利要求1所述的方法,其特征是所述步骤2)真空干燥后的样品进行研磨过40-70目筛。
4.如权利要求1所述的方法,其特征是所述步骤3)抽真空3-5次。
5.如权利要求1所述的方法,其特征是所述步骤(1)中所用的微米硅粉的颗粒尺寸为1-20μm,纯度大于等于99.9%。
6.如权利要求1所述的方法,其特征是所用Cr2O3粉体纯度为分析纯。
7.如权利要求1所述的方法,其特征是乙醇纯度为分析纯。
8.如权利要求1所述的方法,其特征是所述步骤是(3)中氮氢混合气:氮气92-95%,氢气5-8%。
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