CN109964307B - 接合晶片计量 - Google Patents
接合晶片计量 Download PDFInfo
- Publication number
- CN109964307B CN109964307B CN201780070558.9A CN201780070558A CN109964307B CN 109964307 B CN109964307 B CN 109964307B CN 201780070558 A CN201780070558 A CN 201780070558A CN 109964307 B CN109964307 B CN 109964307B
- Authority
- CN
- China
- Prior art keywords
- wafer
- edge profile
- coordinates
- vertical line
- line segment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/27—Structural arrangements therefor
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/002—Measuring arrangements characterised by the use of optical techniques for measuring two or more coordinates
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/2433—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures for measuring outlines by shadow casting
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/10—Segmentation; Edge detection
- G06T7/13—Edge detection
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/60—Analysis of geometric attributes
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/70—Determining position or orientation of objects or cameras
- G06T7/73—Determining position or orientation of objects or cameras using feature-based methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
- H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/20—Special algorithmic details
- G06T2207/20048—Transform domain processing
- G06T2207/20061—Hough transform
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/30—Subject of image; Context of image processing
- G06T2207/30108—Industrial image inspection
- G06T2207/30148—Semiconductor; IC; Wafer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Theoretical Computer Science (AREA)
- Geometry (AREA)
- Quality & Reliability (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Manufacturing & Machinery (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662427373P | 2016-11-29 | 2016-11-29 | |
| US62/427,373 | 2016-11-29 | ||
| US15/627,834 | 2017-06-20 | ||
| US15/627,834 US10540759B2 (en) | 2016-11-29 | 2017-06-20 | Bonded wafer metrology |
| PCT/US2017/063310 WO2018102260A1 (en) | 2016-11-29 | 2017-11-27 | Bonded wafer metrology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109964307A CN109964307A (zh) | 2019-07-02 |
| CN109964307B true CN109964307B (zh) | 2023-03-10 |
Family
ID=62190293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780070558.9A Active CN109964307B (zh) | 2016-11-29 | 2017-11-27 | 接合晶片计量 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10540759B2 (https=) |
| EP (1) | EP3507826B1 (https=) |
| JP (1) | JP6916877B2 (https=) |
| KR (1) | KR102301552B1 (https=) |
| CN (1) | CN109964307B (https=) |
| TW (1) | TWI731197B (https=) |
| WO (1) | WO2018102260A1 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110488751B (zh) * | 2018-08-29 | 2022-08-19 | 中山大学 | 一种自动化工艺线的石墨料盘视觉定位系统 |
| KR102840203B1 (ko) | 2020-09-01 | 2025-08-01 | 삼성전자주식회사 | 기판 정렬 장치 및 이를 구비하는 기판 본딩 설비 |
| JP7682654B2 (ja) * | 2021-03-11 | 2025-05-26 | 株式会社岡本工作機械製作所 | 半導体装置の製造方法及び製造装置 |
| IL304714B2 (en) * | 2021-04-19 | 2025-03-01 | Kla Corp | Edge profile inspection for delamination defects |
| US12131454B2 (en) * | 2021-09-15 | 2024-10-29 | Onto Innovation, Inc. | Substrate mapping using deep neural-networks |
| CN115661143B (zh) * | 2022-12-14 | 2023-05-30 | 惠州威尔高电子有限公司 | 用于MiniLED晶圆缺陷的快速检测系统 |
| JP2024130368A (ja) * | 2023-03-14 | 2024-09-30 | 株式会社コベルコ科研 | 貼合せ基板の位置ずれ量測定装置および該方法ならびに半導体製造装置 |
| CN116313971B (zh) * | 2023-05-17 | 2023-10-20 | 拓荆键科(海宁)半导体设备有限公司 | 通过边缘检测来进行晶圆键合对准的方法 |
| US20250086780A1 (en) * | 2023-09-12 | 2025-03-13 | Kla Corporation | Concentricity offset measurement for hybrid bonding |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003031469A (ja) * | 2001-07-13 | 2003-01-31 | Toshiba Corp | パターン評価方法,位置合わせ方法、検査装置の検査方法,半導体製造工程の管理方法 |
| US6901171B1 (en) * | 1999-04-30 | 2005-05-31 | Cognex Technology And Investment Corporation | Methods and apparatuses for refining groupings of edge points that represent a contour in an image |
| JP2010238970A (ja) * | 2009-03-31 | 2010-10-21 | Yamatake Corp | 円盤状部材の中心位置推定方法及び画像処理装置 |
| CN103403620A (zh) * | 2010-10-13 | 2013-11-20 | 尤利塔股份公司 | 用于印制周期图案的方法和设备 |
| TWI447842B (zh) * | 2010-12-13 | 2014-08-01 | Ev集團E塔那有限公司 | 判定對準誤差的裝置、器件和方法 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6081325A (en) * | 1996-06-04 | 2000-06-27 | Kla-Tencor Corporation | Optical scanning system for surface inspection |
| JP2002050749A (ja) * | 2000-07-31 | 2002-02-15 | Canon Inc | 複合部材の分離方法及び装置 |
| JP3629244B2 (ja) | 2002-02-19 | 2005-03-16 | 本多エレクトロン株式会社 | ウエーハ用検査装置 |
| WO2004104566A1 (de) | 2003-05-19 | 2004-12-02 | Micro-Epsilon Messtechnik Gmbh & Co. Kg | Verfahren und vorrichtung zur optischen qualitätsprüfung von objekten mit vorzugsweise kreisförmig umlaufendem rand |
| US7340087B2 (en) | 2003-07-14 | 2008-03-04 | Rudolph Technologies, Inc. | Edge inspection |
| JP4500157B2 (ja) | 2004-11-24 | 2010-07-14 | 株式会社神戸製鋼所 | 形状計測装置用光学系 |
| JP4585926B2 (ja) | 2005-06-17 | 2010-11-24 | 株式会社日立ハイテクノロジーズ | パターンレイヤーデータ生成装置、それを用いたパターンレイヤーデータ生成システム、半導体パターン表示装置、パターンレイヤーデータ生成方法、及びコンピュータプログラム |
| US7616804B2 (en) | 2006-07-11 | 2009-11-10 | Rudolph Technologies, Inc. | Wafer edge inspection and metrology |
| JP4262285B2 (ja) | 2007-07-18 | 2009-05-13 | 株式会社コベルコ科研 | 形状測定装置,形状測定方法 |
| DE102007042271B3 (de) * | 2007-09-06 | 2009-02-05 | Vistec Semiconductor Systems Gmbh | Verfahren zur Bestimmung der Lage der Entlackungskante eines scheibenförmigen Objekts |
| US20090142916A1 (en) | 2007-11-29 | 2009-06-04 | Qimonda Ag | Apparatus and method of manufacturing an integrated circuit |
| FR2955654B1 (fr) | 2010-01-25 | 2012-03-30 | Soitec Silicon Insulator Technologies | Systeme et procede d'evaluation de deformations inhomogenes dans des plaques multicouches |
| TWI532116B (zh) * | 2010-04-11 | 2016-05-01 | 肯提克有限公司 | 晶圓對齊方法及系統 |
| US8629902B2 (en) | 2010-10-12 | 2014-01-14 | Kla-Tencor Corporation | Coordinate fusion and thickness calibration for semiconductor wafer edge inspection |
| JP2013093389A (ja) | 2011-10-24 | 2013-05-16 | Hitachi High-Technologies Corp | 光学式検査装置及びエッジ検査装置 |
| JP5836223B2 (ja) * | 2011-12-02 | 2015-12-24 | 株式会社神戸製鋼所 | 貼合基板の回転ズレ量計測装置、貼合基板の回転ズレ量計測方法、及び貼合基板の製造方法 |
| US9646896B2 (en) | 2013-07-12 | 2017-05-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lithographic overlay sampling |
| US9734568B2 (en) * | 2014-02-25 | 2017-08-15 | Kla-Tencor Corporation | Automated inline inspection and metrology using shadow-gram images |
| US9645097B2 (en) | 2014-06-20 | 2017-05-09 | Kla-Tencor Corporation | In-line wafer edge inspection, wafer pre-alignment, and wafer cleaning |
| US9719943B2 (en) | 2014-09-30 | 2017-08-01 | Kla-Tencor Corporation | Wafer edge inspection with trajectory following edge profile |
| JP6281019B2 (ja) | 2015-03-20 | 2018-02-14 | 株式会社日立ハイテクノロジーズ | 電子線式パターン検査装置 |
-
2017
- 2017-06-20 US US15/627,834 patent/US10540759B2/en active Active
- 2017-11-27 JP JP2019524901A patent/JP6916877B2/ja active Active
- 2017-11-27 KR KR1020197017836A patent/KR102301552B1/ko active Active
- 2017-11-27 CN CN201780070558.9A patent/CN109964307B/zh active Active
- 2017-11-27 WO PCT/US2017/063310 patent/WO2018102260A1/en not_active Ceased
- 2017-11-27 EP EP17876339.7A patent/EP3507826B1/en active Active
- 2017-11-28 TW TW106141279A patent/TWI731197B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6901171B1 (en) * | 1999-04-30 | 2005-05-31 | Cognex Technology And Investment Corporation | Methods and apparatuses for refining groupings of edge points that represent a contour in an image |
| JP2003031469A (ja) * | 2001-07-13 | 2003-01-31 | Toshiba Corp | パターン評価方法,位置合わせ方法、検査装置の検査方法,半導体製造工程の管理方法 |
| JP2010238970A (ja) * | 2009-03-31 | 2010-10-21 | Yamatake Corp | 円盤状部材の中心位置推定方法及び画像処理装置 |
| CN103403620A (zh) * | 2010-10-13 | 2013-11-20 | 尤利塔股份公司 | 用于印制周期图案的方法和设备 |
| TWI447842B (zh) * | 2010-12-13 | 2014-08-01 | Ev集團E塔那有限公司 | 判定對準誤差的裝置、器件和方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3507826B1 (en) | 2025-05-28 |
| US20180150952A1 (en) | 2018-05-31 |
| JP2019537263A (ja) | 2019-12-19 |
| KR20190082947A (ko) | 2019-07-10 |
| EP3507826A1 (en) | 2019-07-10 |
| KR102301552B1 (ko) | 2021-09-13 |
| JP6916877B2 (ja) | 2021-08-11 |
| CN109964307A (zh) | 2019-07-02 |
| TW201828254A (zh) | 2018-08-01 |
| TWI731197B (zh) | 2021-06-21 |
| EP3507826A4 (en) | 2020-04-15 |
| US10540759B2 (en) | 2020-01-21 |
| WO2018102260A1 (en) | 2018-06-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109964307B (zh) | 接合晶片计量 | |
| JP6618478B2 (ja) | 射影画像を用いた自動インライン検査及び計測 | |
| JP6312370B2 (ja) | ウェーハジオメトリ計測ツールによるウェーハ表面フィーチャの検出、分類および定量化のためのシステムおよび方法 | |
| CN112767399B (zh) | 半导体焊线缺陷检测方法、电子设备及存储介质 | |
| US9704232B2 (en) | Stereo vision measurement system and method | |
| CN109923654B (zh) | 通过跨层图像相减的晶片噪声减少 | |
| TWI826123B (zh) | 以更高的精度對半導體晶圓進行3d體積檢測的方法和檢測系統 | |
| CN109154575A (zh) | 结合片块及基于设计的缺陷检测 | |
| CN115581123A (zh) | 脱层缺陷的边缘轮廓检验 | |
| US9865047B1 (en) | Systems and methods for effective pattern wafer surface measurement and analysis using interferometry tool | |
| CN110870053B (zh) | 重复缺陷检查 | |
| TWI912508B (zh) | 用於半導體檢測之方法、系統及非暫時性電腦可讀媒體 | |
| KR102737243B1 (ko) | 웨이퍼 결함 검출을 위한 투영 및 거리 분할 알고리즘 | |
| US20250086780A1 (en) | Concentricity offset measurement for hybrid bonding | |
| Tröger et al. | Automated tool for measuring nanotopography of 300 mm wafers at early stages of wafer production | |
| CN120112943A (zh) | 用于半导体检查图像分割的改进方法和设备 | |
| JP2017204504A (ja) | エピタキシャルウェーハの評価方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |