CN109962770A - Silicon-based monolithic integrates quantum key distribution sender chip structure and its encapsulating structure - Google Patents
Silicon-based monolithic integrates quantum key distribution sender chip structure and its encapsulating structure Download PDFInfo
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- CN109962770A CN109962770A CN201711337223.7A CN201711337223A CN109962770A CN 109962770 A CN109962770 A CN 109962770A CN 201711337223 A CN201711337223 A CN 201711337223A CN 109962770 A CN109962770 A CN 109962770A
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- silicon
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- key distribution
- quantum key
- phase shifter
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 51
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 51
- 239000010703 silicon Substances 0.000 title claims abstract description 51
- 230000003287 optical effect Effects 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 229940125730 polarisation modulator Drugs 0.000 claims abstract description 17
- 230000010287 polarization Effects 0.000 claims description 20
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 230000008901 benefit Effects 0.000 abstract description 4
- 238000012360 testing method Methods 0.000 abstract description 2
- 101100028789 Arabidopsis thaliana PBS1 gene Proteins 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- ZXQYGBMAQZUVMI-GCMPRSNUSA-N gamma-cyhalothrin Chemical compound CC1(C)[C@@H](\C=C(/Cl)C(F)(F)F)[C@H]1C(=O)O[C@H](C#N)C1=CC=CC(OC=2C=CC=CC=2)=C1 ZXQYGBMAQZUVMI-GCMPRSNUSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000000243 photosynthetic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L9/00—Cryptographic mechanisms or cryptographic arrangements for secret or secure communications; Network security protocols
- H04L9/08—Key distribution or management, e.g. generation, sharing or updating, of cryptographic keys or passwords
- H04L9/0816—Key establishment, i.e. cryptographic processes or cryptographic protocols whereby a shared secret becomes available to two or more parties, for subsequent use
- H04L9/0852—Quantum cryptography
- H04L9/0858—Details about key distillation or coding, e.g. reconciliation, error correction, privacy amplification, polarisation coding or phase coding
Abstract
The invention discloses a kind of silicon-based monolithics to integrate quantum key distribution sender chip structure and its encapsulating structure, chip structure includes the first intensity modulator, second intensity modulator, at least one adjustable optical attenuator, light polarization modulator, first intensity modulator, second intensity modulator, at least one adjustable optical attenuator, light polarization modulator joins end to end, signal light enters from the first intensity modulator, output end of the output end of light polarization modulator as chip structure, first intensity modulator and the second intensity modulator structure are identical, including the first beam splitter, two-way the first silicon substrate phase shifter and combiner device, first beam splitter is connected respectively to combiner device by two-way the first silicon substrate phase shifter.The present invention has the advantage that the present invention has many advantages, such as that compatible with CMOS technology, at low cost, system structure is simple, integrated level is high, test is simple, is easy to encapsulate compared with prior art.
Description
Technical field
The present invention relates to quantum key distribution fields, are more particularly to a kind of integrated quantum key distribution transmission of silicon-based monolithic
Square chip structure.
Background technique
The quantum key distribution sender of laboratory and commercialization is that discrete device is built at present: as used intensity
Modulator, polarization beam apparatus, phase-modulator, adjustable optical attenuator etc..
As shown in Figure 1, being existing typical quantum key distribution sender optical path, quantum key distribution sender's optical path
Including intensity modulator IM, polarization beam apparatus PBS1, phase-modulator PM, adjustable optical attenuator VOA, intensity modulator IM, partially
Vibration beam splitter PBS1, adjustable optical attenuator VOA are sequentially connected, phase-modulator PM be connected to two polarization beam apparatus PBS1 it
Between.Polarization beam apparatus PBS1 and phase-modulator PM collectively forms polarization state preparation module, and adjustable optical attenuator is placed on partially
Polarization state is prepared behind module, to prevent Trojan attack, improves safety.
Usually by multiple flanged joints between existing each discrete device, additionally, due to the variation such as temperature etc. of environment
It will also result in each device Insertion Loss and optical fiber link light path change, connected between each discrete device by optical fiber and flange
It connects, cannot achieve single-chip integration, and is with high costs more, furthermore high power consumption is also a urgent problem to be solved.
Summary of the invention
Technical problem to be solved by the present invention lies in provide a kind of to can be realized silicon substrate list highly integrated, small in size
Piece integrates quantum key distribution sender chip structure.
The present invention is to solve above-mentioned technical problem by the following technical programs: a kind of integrated quantum key point of silicon-based monolithic
Send out sender's chip structure, including the first intensity modulator, the second intensity modulator, light polarization modulator, at least one tunable optical
Attenuator, the first intensity modulator, the second intensity modulator, light polarization modulator, at least one adjustable optical attenuator join end to end,
Signal light enters from the first intensity modulator, output end of the output end of adjustable optical attenuator as chip structure, and described first
Intensity modulator and the second intensity modulator are that Mach increases Dare interferometer structure, including the first beam splitter, the first silicon of two-way
Base phase shifter and combiner device, the first beam splitter are connected respectively to combiner device by two-way the first silicon substrate phase shifter.
First intensity modulator, the second intensity modulator, light polarization modulator, adjustable as a preferred technical solution,
Light connects channel is established by planar optical waveguide between optical attenuator.
As a preferred technical solution, the light polarization modulator include the second beam splitter, all the way the second silicon substrate phase shifter,
Polarization rotation bundling device；Second beam splitter passes through the second silicon substrate phase shifter all the way and is connected to polarization rotation bundling device, separately
It is directly connected to polarization rotation bundling device all the way.
The optical path that second beam splitter, the second silicon substrate phase shifter, polarization rotate between bundling device passes through plane light wave
It leads to form light connects channel.
Silicon substrate phase shifter is using single driving phase shifter of line of rabbet joint GS structure electrode or use as a preferred technical solution,
The double drive phase shifter of co-planar waveguide GSG structure electrode, the adjustable optical attenuator are electric absorption type adjustable optical attenuator.
Beam splitter is the beam splitter of multi-mode interferometer or the beam splitter of Y-branch as a preferred technical solution,；Light
Bundling device is the combiner device of multi-mode interferometer or the combiner device of Y-branch.
The invention also discloses silicon-based monolithics described in a kind of as above any one scheme to integrate quantum key distribution sender
The encapsulating structure of chip structure, encapsulating structure periphery have Y pin, and wherein pin 1 and pin 2 are respectively that silicon-based monolithic is integrated
The light input port and optical output port of quantum key distribution sender's chip structure, i.e. pin 1 connect the first internal intensity
Modulator, pin 2 connect the output port of internal adjustable optical attenuator, other pins 3-Y is that internal optics chip electrode draws
Pin foot out.
Wherein, the opposite sides of encapsulating structure is located at as the pin 1 and pin 2 of light input port and optical output port.
Alternatively, being located at the same side of encapsulating structure as the pin 1 and pin 2 of light input port and optical output port.
Alternatively, being located at the adjacent two sides of encapsulating structure as the pin 1 and pin 2 of light input port and optical output port.
The present invention has the advantage that the present invention has compatible with CMOS technology, at low cost, system knot compared with prior art
Structure is simple, integrated level is high, test is simple, is easy to the advantages that encapsulating.
Detailed description of the invention
Fig. 1 is existing typical quantum key distribution sender index path；
Fig. 2 is that the silicon-based monolithic of the embodiment of the present invention integrates quantum key distribution sender chip structure figure；
Fig. 3 is the structure principle chart of the intensity modulator of the embodiment of the present invention；
Fig. 4 is the structure principle chart of the light polarization modulator of the embodiment of the present invention；
Fig. 5 to Fig. 7 is that the silicon-based monolithic of the embodiment of the present invention integrates three kinds of encapsulation that quantum key distribution sends square chip
The structure chart of form.
Specific embodiment
It elaborates below to the embodiment of the present invention, the present embodiment carries out under the premise of the technical scheme of the present invention
Implement, the detailed implementation method and specific operation process are given, but protection scope of the present invention is not limited to following implementation
Example.
As shown in Fig. 2, a kind of silicon-based monolithic integrates quantum key distribution sender chip structure, including the first intensity modulated
Device, the second intensity modulator, light polarization modulator, at least one adjustable optical attenuator, the first intensity modulator, the second intensity modulated
Device, light polarization modulator, at least one adjustable optical attenuator join end to end, and signal light enters from the first intensity modulator, tunable optical
Output end of the output end of attenuator as chip structure.
After signal light is handled by first intensity modulator, the first pulse train is obtained；Using the second intensity modulated
Obtain that pulse amplitude is different, the second pulse train of period not etc. after device processing；It is close that quantum is modulated to using light polarization modulator
Different polarization states needed for key distribution protocol；The light of last different polarization states passes through adjustable optical attenuator for light intensity attenuation to list
Photon level output.
First intensity modulator, light polarization modulator, passes through plane between adjustable optical attenuator at the second intensity modulator
Optical waveguide establishes light connects channel；The planar optical waveguide is corresponding with the mode of the optical signal of transmission.
Simultaneously as shown in fig.3, first intensity modulator and the second intensity modulator are that Mach increases Dare interferometer
(MZI) structure, for realizing the function that electric signal is loaded into optical signal comprising beam splitter 1, two-way silicon substrate phase shifter with
And combiner device 2, beam splitter 1 are connected respectively to combiner device 2 by two-way silicon substrate phase shifter, into the light of intensity modulator
Divide the two-beam equal for power through the beam splitter 1, and respectively enter the silicon substrate phase shifter all the way, the silicon substrate is moved
For realizing the phase shift of optical signal, the silicon substrate phase shifter output light exports phase device after the combiner device 2 carries out conjunction beam.
Preferably, the silicon substrate phase shifter is single driving phase shifter using line of rabbet joint GS structure electrode or uses co-planar waveguide
The double drive phase shifter of GSG structure electrode.
Preferably, the beam splitter 1 is the beam splitter of multi-mode interferometer or the beam splitter of Y-branch；It is described photosynthetic
Beam device 2 is the combiner device of multi-mode interferometer or the combiner device of Y-branch.
Preferably, the adjustable optical attenuator is electric absorption type adjustable optical attenuator.
Preferably, while as shown in fig.4, the light polarization modulator include beam splitter 10, all the way silicon substrate phase shifter 30,
Polarization rotation bundling device 20；10 1 tunnel of beam splitter is connected to polarization rotation bundling device 20 by silicon substrate phase shifter 30, separately
It is directly connected to polarization rotation bundling device 20 all the way.The beam splitter 10, silicon substrate phase shifter 30, polarization rotation bundling device 20 it
Between optical path pass through planar optical waveguide formed light connects channel.
Preferably, the silicon substrate phase shifter 30 is single driving phase shifter using line of rabbet joint GS structure electrode or uses coplanar wave
Lead the double drive phase shifter of GSG structure electrode.
Preferably, the beam splitter 10 is the beam splitter of multi-mode interferometer or the beam splitter of Y-branch.
It please refers to shown in Fig. 5 to Fig. 7, the encapsulation of quantum key distribution sender chip structure is integrated for the silicon-based monolithic
Structure, there are three types of encapsulation:
1, as shown in figure 5, encapsulating structure periphery has Y pin, wherein pin 1 and pin 2 are respectively silicon-based monolithic collection
At the light input port and optical output port of quantum key distribution sender's chip structure, i.e. pin 1 connects internal the last the first
Modulator is spent, pin 2 connects the output port of internal adjustable optical attenuator, other pins 3-Y is internal optics chip electrode
The pin foot that pad is drawn, the relationship in figure between each pin code name is: Y >=X >=N >=M >=3.It is defeated as light in the encapsulating structure
The pin 1 and pin 2 of inbound port and optical output port are located at the opposite sides of encapsulating structure.
2, as shown in fig. 6, encapsulating structure periphery has Y pin, wherein pin 1 and pin 2 are respectively silicon-based monolithic collection
At the light input port and optical output port of quantum key distribution sender's chip structure, i.e. pin 1 connects internal the last the first
Modulator is spent, pin 2 connects the output port of internal adjustable optical attenuator, other pins 3-Y is internal optics chip electrode
The pin foot that pad is drawn, the relationship in figure between each pin code name is: Y >=X >=N >=M >=3.It is defeated as light in the encapsulating structure
The pin 1 and pin 2 of inbound port and optical output port are located at the same side of encapsulating structure.
3, as shown in fig. 7, encapsulating structure periphery has Y pin, wherein pin 1 and pin 2 are respectively silicon-based monolithic collection
At the light input port and optical output port of quantum key distribution sender's chip structure, i.e. pin 1 connects internal the last the first
Modulator is spent, pin 2 connects the output port of internal adjustable optical attenuator, other pins 3-Y is internal optics chip electrode
The pin foot that pad is drawn, the relationship in figure between each pin code name is: Y >=X >=N >=M >=3.It is defeated as light in the encapsulating structure
The pin 1 and pin 2 of inbound port and optical output port are located at the adjacent two sides of encapsulating structure.
Above-mentioned three kinds of encapsulating structures can satisfy the different demands of practical application.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (10)
1. a kind of silicon-based monolithic integrates quantum key distribution sender chip structure, which is characterized in that including the first intensity modulated
Device, the second intensity modulator, light polarization modulator, at least one adjustable optical attenuator, the first intensity modulator, the second intensity modulated
Device, light polarization modulator, at least one adjustable optical attenuator join end to end, and signal light enters from the first intensity modulator, tunable optical
Output end of the output end of attenuator as chip structure, first intensity modulator and the second intensity modulator are Mach increasing
Dare interferometer structure, including the first beam splitter, two-way the first silicon substrate phase shifter and combiner device, the first beam splitter are logical
It crosses two-way the first silicon substrate phase shifter and is connected respectively to combiner device.
2. silicon-based monolithic according to claim 1 integrates quantum key distribution sender chip structure, which is characterized in that institute
It states the first intensity modulator, the second intensity modulator, light polarization modulator, established by planar optical waveguide between adjustable optical attenuator
Light connects channel.
3. silicon-based monolithic according to claim 1 integrates quantum key distribution sender chip structure, which is characterized in that institute
Stating light polarization modulator includes the second beam splitter, all the way the second silicon substrate phase shifter, polarization rotation bundling device；The second smooth beam splitting
Device passes through the second silicon substrate phase shifter all the way and is connected to polarization rotation bundling device, and another way is directly connected to polarization rotation bundling device.
4. silicon-based monolithic according to claim 3 integrates quantum key distribution sender chip structure, which is characterized in that institute
It states the optical path that the second beam splitter, the second silicon substrate phase shifter, polarization rotate between bundling device and light company is formed by planar optical waveguide
Connect road.
5. silicon-based monolithic according to claim 3 integrates quantum key distribution sender chip structure, which is characterized in that institute
State the first silicon substrate phase shifter, the second silicon substrate phase shifter is single driving phase shifter using line of rabbet joint GS structure electrode or uses coplanar wave
The double drive phase shifter of GSG structure electrode is led, the adjustable optical attenuator is electric absorption type adjustable optical attenuator.
6. quantum key distribution sender chip structure is integrated according to the described in any item silicon-based monolithics of claim 3 to 5, it is special
Sign is that first beam splitter, the second beam splitter are the beam splitter of multi-mode interferometer or the beam splitter of Y-branch；
The combiner device is the combiner device of multi-mode interferometer or the combiner device of Y-branch.
7. the envelope that a kind of silicon-based monolithic as claimed in any one of claims 1 to 6 integrates quantum key distribution sender chip structure
Assembling structure, which is characterized in that encapsulating structure periphery has Y pin, and wherein pin 1 and pin 2 are respectively that silicon-based monolithic is integrated
The light input port and optical output port of quantum key distribution sender's chip structure, i.e. pin 1 connect the first internal intensity
Modulator, pin 2 connect the output port of internal adjustable optical attenuator, other pins 3-Y is that internal optics chip electrode draws
Pin foot out.
8. silicon-based monolithic according to claim 7 integrates the encapsulating structure of quantum key distribution sender chip structure,
It is characterized in that, the opposite sides of encapsulating structure is located at as the pin 1 and pin 2 of light input port and optical output port.
9. silicon-based monolithic according to claim 7 integrates the encapsulating structure of quantum key distribution sender chip structure,
It is characterized in that, the same side of encapsulating structure is located at as the pin 1 and pin 2 of light input port and optical output port.
10. silicon-based monolithic according to claim 7 integrates the encapsulating structure of quantum key distribution sender chip structure,
It is characterized in that, the adjacent two sides of encapsulating structure is located at as the pin 1 and pin 2 of light input port and optical output port.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110198189A (en) * | 2019-07-11 | 2019-09-03 | 军事科学院系统工程研究院网络信息研究所 | Higher-dimension multiplexed quantum communication system based on integrated chip optical path |
| CN110324144A (en) * | 2019-07-30 | 2019-10-11 | 江苏亨通问天量子信息研究院有限公司 | Quantum-key distribution transmitting terminal chip, encapsulating structure and equipment |
| CN110417550A (en) * | 2019-07-29 | 2019-11-05 | 中国科学院半导体研究所 | A kind of coding chip for quantum key distribution |
| CN113452450A (en) * | 2021-06-25 | 2021-09-28 | 中国科学技术大学 | Light polarization modulation method, light polarization modulation module and light chip |
| CN113497705A (en) * | 2020-04-08 | 2021-10-12 | 山东国迅量子芯科技有限公司 | Polarization modulator, driving method and quantum key distribution system |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030044153A1 (en) * | 2001-09-04 | 2003-03-06 | Michael Bazylenko | Planer waveguide and method of formation |
| US20030081902A1 (en) * | 2001-10-30 | 2003-05-01 | Blauvelt Henry A. | Optical junction apparatus and methods employing optical power transverse-transfer |
| JP2006023409A (en) * | 2004-07-07 | 2006-01-26 | Nippon Telegr & Teleph Corp <Ntt> | Optical sensor |
| US20060222180A1 (en) * | 2002-10-15 | 2006-10-05 | Elliott Brig B | Chip-scale transmitter for quantum cryptography |
| JP2011109302A (en) * | 2009-11-16 | 2011-06-02 | Japan Science & Technology Agency | Device for distributing/transmitting quantum key |
| CN202586980U (en) * | 2012-05-23 | 2012-12-05 | 北京交通大学 | Optical high-order Gaussian pulse generation device based on silicon-base annular resonant cavity |
| JP2017046044A (en) * | 2015-08-24 | 2017-03-02 | 沖電気工業株式会社 | Sagnac loop type asymmetrical mach-zehnder interferometer, and receiver for quantum key distribution |
| CN206060783U (en) * | 2016-08-12 | 2017-03-29 | 上海国盾量子信息技术有限公司 | Quantum key distribution device used in duplexing quantum key distribution system |
| CN106656494A (en) * | 2017-03-08 | 2017-05-10 | 浙江九州量子信息技术股份有限公司 | Quantum key allocation system and method based on continuous light chopping |
| CN107135068A (en) * | 2017-04-18 | 2017-09-05 | 中国科学院半导体研究所 | The high speed Polarization Control encoder on the piece of quantum key distribution |
| CN206506541U (en) * | 2017-06-19 | 2017-09-19 | 上海朗研光电科技有限公司 | A kind of high speed quantum key distribution system of phase-modulated polarized coding |
| CN107196715A (en) * | 2017-07-28 | 2017-09-22 | 浙江九州量子信息技术股份有限公司 | A kind of quantum key dispatching system modulated based on interference ring single-phase and method |
| CN207543122U (en) * | 2017-12-14 | 2018-06-26 | 科大国盾量子技术股份有限公司 | Silicon-based monolithic integrates quantum key distribution sender chip structure and its encapsulating structure |
-
2017
- 2017-12-14 CN CN201711337223.7A patent/CN109962770B/en active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030044153A1 (en) * | 2001-09-04 | 2003-03-06 | Michael Bazylenko | Planer waveguide and method of formation |
| US20030081902A1 (en) * | 2001-10-30 | 2003-05-01 | Blauvelt Henry A. | Optical junction apparatus and methods employing optical power transverse-transfer |
| US20060222180A1 (en) * | 2002-10-15 | 2006-10-05 | Elliott Brig B | Chip-scale transmitter for quantum cryptography |
| JP2006023409A (en) * | 2004-07-07 | 2006-01-26 | Nippon Telegr & Teleph Corp <Ntt> | Optical sensor |
| JP2011109302A (en) * | 2009-11-16 | 2011-06-02 | Japan Science & Technology Agency | Device for distributing/transmitting quantum key |
| CN202586980U (en) * | 2012-05-23 | 2012-12-05 | 北京交通大学 | Optical high-order Gaussian pulse generation device based on silicon-base annular resonant cavity |
| JP2017046044A (en) * | 2015-08-24 | 2017-03-02 | 沖電気工業株式会社 | Sagnac loop type asymmetrical mach-zehnder interferometer, and receiver for quantum key distribution |
| CN206060783U (en) * | 2016-08-12 | 2017-03-29 | 上海国盾量子信息技术有限公司 | Quantum key distribution device used in duplexing quantum key distribution system |
| CN106656494A (en) * | 2017-03-08 | 2017-05-10 | 浙江九州量子信息技术股份有限公司 | Quantum key allocation system and method based on continuous light chopping |
| CN107135068A (en) * | 2017-04-18 | 2017-09-05 | 中国科学院半导体研究所 | The high speed Polarization Control encoder on the piece of quantum key distribution |
| CN206506541U (en) * | 2017-06-19 | 2017-09-19 | 上海朗研光电科技有限公司 | A kind of high speed quantum key distribution system of phase-modulated polarized coding |
| CN107196715A (en) * | 2017-07-28 | 2017-09-22 | 浙江九州量子信息技术股份有限公司 | A kind of quantum key dispatching system modulated based on interference ring single-phase and method |
| CN207543122U (en) * | 2017-12-14 | 2018-06-26 | 科大国盾量子技术股份有限公司 | Silicon-based monolithic integrates quantum key distribution sender chip structure and its encapsulating structure |
Non-Patent Citations (3)
| Title |
|---|
| TAKESHI AKUTSU ECT.: "Hybrid integration of semiconductor optical amplifier and silica-based planar lightwave circuit for low polarization dependent gain", 《2011 OPTICAL FIBER COMMUNICATION CONFERENCE AND EXPOSITION AND THE NATIONAL FIBER OPTIC ENGINEERS CONFERENCE》 * |
| 桂有珍, 韩正甫, 郭光灿: "量子密码术", 物理学进展, no. 04, 30 January 2003 (2003-01-30) * |
| 蔡进;张慧娟;王成丽;陶智勇;: "硅光子器件及其集成技术的研究", 光通信技术, no. 06 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110198189A (en) * | 2019-07-11 | 2019-09-03 | 军事科学院系统工程研究院网络信息研究所 | Higher-dimension multiplexed quantum communication system based on integrated chip optical path |
| CN110417550A (en) * | 2019-07-29 | 2019-11-05 | 中国科学院半导体研究所 | A kind of coding chip for quantum key distribution |
| CN110324144A (en) * | 2019-07-30 | 2019-10-11 | 江苏亨通问天量子信息研究院有限公司 | Quantum-key distribution transmitting terminal chip, encapsulating structure and equipment |
| CN110324144B (en) * | 2019-07-30 | 2023-09-22 | 江苏亨通问天量子信息研究院有限公司 | Quantum key distribution transmitting end chip, packaging structure and device |
| CN113497705A (en) * | 2020-04-08 | 2021-10-12 | 山东国迅量子芯科技有限公司 | Polarization modulator, driving method and quantum key distribution system |
| CN113452450A (en) * | 2021-06-25 | 2021-09-28 | 中国科学技术大学 | Light polarization modulation method, light polarization modulation module and light chip |
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| CN109962770B (en) | 2024-03-12 |
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