CN109962770B - Silicon-based monolithic integrated quantum key distribution sender chip - Google Patents
Silicon-based monolithic integrated quantum key distribution sender chip Download PDFInfo
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- CN109962770B CN109962770B CN201711337223.7A CN201711337223A CN109962770B CN 109962770 B CN109962770 B CN 109962770B CN 201711337223 A CN201711337223 A CN 201711337223A CN 109962770 B CN109962770 B CN 109962770B
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 48
- 239000010703 silicon Substances 0.000 title claims abstract description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 230000003287 optical effect Effects 0.000 claims abstract description 110
- 229940125730 polarisation modulator Drugs 0.000 claims abstract description 17
- 230000010287 polarization Effects 0.000 claims description 17
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 5
- 230000010354 integration Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 238000005538 encapsulation Methods 0.000 abstract description 2
- 238000012360 testing method Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 5
- 101100028789 Arabidopsis thaliana PBS1 gene Proteins 0.000 description 3
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000000243 photosynthetic effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- ZXQYGBMAQZUVMI-GCMPRSNUSA-N gamma-cyhalothrin Chemical compound CC1(C)[C@@H](\C=C(/Cl)C(F)(F)F)[C@H]1C(=O)O[C@H](C#N)C1=CC=CC(OC=2C=CC=CC=2)=C1 ZXQYGBMAQZUVMI-GCMPRSNUSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L9/00—Cryptographic mechanisms or cryptographic arrangements for secret or secure communications; Network security protocols
- H04L9/08—Key distribution or management, e.g. generation, sharing or updating, of cryptographic keys or passwords
- H04L9/0816—Key establishment, i.e. cryptographic processes or cryptographic protocols whereby a shared secret becomes available to two or more parties, for subsequent use
- H04L9/0852—Quantum cryptography
- H04L9/0858—Details about key distillation or coding, e.g. reconciliation, error correction, privacy amplification, polarisation coding or phase coding
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Theoretical Computer Science (AREA)
- Computer Security & Cryptography (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a silicon-based monolithic integrated quantum key distribution sender chip structure and a packaging structure thereof, wherein the chip structure comprises a first intensity modulator, a second intensity modulator, at least one adjustable optical attenuator and a polarization modulator, the first intensity modulator, the second intensity modulator, the at least one adjustable optical attenuator and the polarization modulator are connected end to end, signal light enters from the first intensity modulator, the output end of the polarization modulator is used as the output end of the chip structure, the first intensity modulator and the second intensity modulator have the same structure and comprise a first optical beam splitter, two paths of first silicon-based phase shifters and an optical beam combiner, and the first optical beam splitter is respectively connected to the optical beam combiner through the two paths of first silicon-based phase shifters. Compared with the prior art, the invention has the following advantages: the invention has the advantages of compatibility with the CMOS process, low cost, simple system structure, high integration level, simple test, easy encapsulation and the like.
Description
Technical Field
The invention relates to the field of quantum key distribution, in particular to a silicon-based monolithic integrated quantum key distribution sender chip structure.
Background
At present, all quantum key distribution transmitters in laboratories and commercial use are built by discrete devices: such as with an intensity modulator, polarizing beam splitter, phase modulator, tunable optical attenuator, etc.
As shown in fig. 1, the conventional typical quantum key distribution transmitter optical path includes an intensity modulator IM, a polarizing beam splitter PBS1, a phase modulator PM, and a tunable optical attenuator VOA, where the intensity modulator IM, the polarizing beam splitter PBS1, and the tunable optical attenuator VOA are sequentially connected, and the phase modulator PM is connected between the two polarizing beam splitters PBS 1. The polarization beam splitter PBS1 and the phase modulator PM together form a polarization state preparation module, and the adjustable optical attenuator is placed behind the polarization state preparation module so as to prevent Trojan attack and improve safety.
In addition, because of the change of the environment such as temperature, the insertion loss of each device and the optical path length of an optical fiber link are also changed, the discrete devices cannot be monolithically integrated through the optical fiber and the flange connection, the cost is high, and the high power consumption is a problem to be solved urgently.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a silicon-based monolithic integrated quantum key distribution sender chip structure which can realize high integration and small volume.
The invention solves the technical problems through the following technical scheme: the utility model provides a silicon-based monolithic integrated quantum key distributes sender chip structure, includes first intensity modulator, second intensity modulator, polarization modulator, at least one adjustable optical attenuator, first intensity modulator, second intensity modulator, polarization modulator, at least one adjustable optical attenuator end to end, and signal light gets into from first intensity modulator, and adjustable optical attenuator's output is as the output of chip structure, first intensity modulator and second intensity modulator are Mach-Zehnder interferometer structure, including first optical beam splitter, two-way first silicon-based phase shifter and photosynthetic beam ware, first optical beam splitter is connected to photosynthetic beam ware respectively through two-way first silicon-based phase shifter.
As a preferable technical scheme, an optical connection channel is established among the first intensity modulator, the second intensity modulator, the polarization modulator and the adjustable optical attenuator through a planar optical waveguide.
As a preferable technical scheme, the polarization modulator comprises a second light beam splitter, a path of second silicon-based phase shifter and a polarization rotation beam combiner; one path of the second light beam splitter is connected to the polarization rotation beam combiner through the second silicon-based phase shifter, and the other path of the second light beam splitter is directly connected to the polarization rotation beam combiner.
And the optical paths among the second optical beam splitter, the second silicon-based phase shifter and the polarization rotation beam combiner form an optical connection channel through the planar optical waveguide.
As a preferable technical scheme, the silicon-based phase shifter is a single-drive phase shifter using a slot line GS structure electrode or a double-drive phase shifter using a coplanar waveguide GSG structure electrode, and the adjustable optical attenuator is an electro-absorption adjustable optical attenuator.
As a preferable technical scheme, the optical beam splitter is an optical beam splitter of a multimode interferometer or an optical beam splitter of a Y-branch; the beam combiner is a multimode interferometer beam combiner or a Y-branch beam combiner.
The invention also discloses a packaging structure of the silicon-based monolithic integrated quantum key distribution sender chip structure according to any one of the schemes, wherein Y pins are arranged on the periphery of the packaging structure, wherein the pin 1 and the pin 2 are respectively an optical input port and an optical output port of the silicon-based monolithic integrated quantum key distribution sender chip structure, namely the pin 1 is connected with an internal first intensity modulator, the pin 2 is connected with an output port of an internal adjustable optical attenuator, and the other pins 3-Y are pin pins led out by an internal optical chip electrode.
Wherein, the pin 1 and the pin 2 as the optical input port and the optical output port are positioned on two opposite sides of the package structure.
Alternatively, the pins 1 and 2, which are the optical input port and the optical output port, are located on the same side of the package structure.
Alternatively, the pins 1 and 2, which are the optical input port and the optical output port, are located on adjacent sides of the package structure.
Compared with the prior art, the invention has the following advantages: the invention has the advantages of compatibility with the CMOS process, low cost, simple system structure, high integration level, simple test, easy encapsulation and the like.
Drawings
FIG. 1 is a diagram of a typical prior art quantum key distribution delivery Fang Guanglu;
FIG. 2 is a block diagram of a silicon-based monolithically integrated quantum key distribution sender chip in accordance with an embodiment of the present invention;
FIG. 3 is a schematic diagram of an intensity modulator according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a polarization modulator according to an embodiment of the present invention;
fig. 5 to 7 are block diagrams of three package forms of a silicon-based monolithically integrated quantum key distribution sender chip according to an embodiment of the present invention.
Detailed Description
The following describes in detail the examples of the present invention, which are implemented on the premise of the technical solution of the present invention, and detailed embodiments and specific operation procedures are given, but the scope of protection of the present invention is not limited to the following examples.
As shown in fig. 2, a chip structure of a silicon-based monolithic integrated quantum key distribution sender includes a first intensity modulator, a second intensity modulator, a polarization modulator, and at least one tunable optical attenuator, where the first intensity modulator, the second intensity modulator, the polarization modulator, and the at least one tunable optical attenuator are connected end to end, and signal light enters from the first intensity modulator, and an output end of the tunable optical attenuator is used as an output end of the chip structure.
After the signal light is processed by the first intensity modulator, a first pulse sequence is obtained; then a second pulse sequence with different pulse amplitude and different period is obtained after the second intensity modulator is used for processing; modulating the quantum key into different polarization states required by a quantum key distribution protocol through a polarization modulator; finally, the light with different polarization states passes through the adjustable optical attenuator to attenuate the light intensity to single photon level output.
An optical connection channel is established among the first intensity modulator, the second intensity modulator, the polarization modulator and the adjustable optical attenuator through a planar optical waveguide; the planar optical waveguide corresponds to a mode of the transmitted optical signal.
Referring to fig. 3, the first intensity modulator and the second intensity modulator are in a mach-zehnder interferometer (MZI) structure, and are configured to implement a function of loading an electrical signal into an optical signal, and the optical modulator comprises an optical beam splitter 1, two silicon-based phase shifters and an optical combiner 2, wherein the optical beam splitter 1 is respectively connected to the optical combiner 2 through the two silicon-based phase shifters, light entering the intensity modulator is split into two light beams with equal power through the optical beam splitter 1, and enters one silicon-based phase shifter respectively, the silicon-based phase shifters are configured to implement phase shifting of the optical signal, and light output by the silicon-based phase shifters is output after being combined through the optical combiner 2.
Preferably, the silicon-based phase shifter is a single-drive phase shifter using a slot line GS structure electrode or a dual-drive phase shifter using a coplanar waveguide GSG structure electrode.
Preferably, the beam splitter 1 is a beam splitter of a multimode interferometer or a Y-branch beam splitter; the beam combiner 2 is a beam combiner of a multimode interferometer or a Y-branch beam combiner.
Preferably, the adjustable optical attenuator is an electro-absorption type adjustable optical attenuator.
Preferably, referring to fig. 4, the polarization modulator includes an optical beam splitter 10, a silicon-based phase shifter 30, and a polarization rotating beam combiner 20; the optical beam splitter 10 is connected to the polarization rotating beam combiner 20 through a silicon-based phase shifter 30 on one hand and is directly connected to the polarization rotating beam combiner 20 on the other hand. The optical paths among the optical beam splitter 10, the silicon-based phase shifter 30 and the polarization rotating beam combiner 20 form an optical connection channel through a planar optical waveguide.
Preferably, the silicon-based phase shifter 30 is a single-drive phase shifter using a slot line GS structure electrode or a dual-drive phase shifter using a coplanar waveguide GSG structure electrode.
Preferably, the beam splitter 10 is a beam splitter of a multimode interferometer or a Y-branch beam splitter.
Referring to fig. 5 to fig. 7, there are three types of packaging structures for the chip structure of the silicon-based monolithically integrated quantum key distribution sender:
1. as shown in fig. 5, the package structure has Y pins at the periphery, wherein pin 1 and pin 2 are respectively an optical input port and an optical output port of the silicon-based monolithic integrated quantum key distribution sender chip structure, that is, pin 1 is connected with an internal first intensity modulator, pin 2 is connected with an output port of an internal adjustable optical attenuator, other pins 3-Y are pin pins led out by an internal optical chip electrode pad, and the relation among the pin codes in the figure is as follows: y is greater than or equal to X is greater than or equal to N is greater than or equal to M is greater than or equal to 3. In the package structure, the pins 1 and 2 serving as the optical input port and the optical output port are positioned on opposite sides of the package structure.
2. As shown in fig. 6, the package structure has Y pins at the periphery, wherein pin 1 and pin 2 are respectively an optical input port and an optical output port of the silicon-based monolithic integrated quantum key distribution sender chip structure, that is, pin 1 is connected with an internal first intensity modulator, pin 2 is connected with an output port of an internal adjustable optical attenuator, other pins 3-Y are pin pins led out by an internal optical chip electrode pad, and the relation among the pin codes in the figure is as follows: y is greater than or equal to X is greater than or equal to N is greater than or equal to M is greater than or equal to 3. In this package structure, the leads 1 and 2 serving as the optical input port and the optical output port are located on the same side of the package structure.
3. As shown in fig. 7, the package structure has Y pins at the periphery, wherein pin 1 and pin 2 are respectively an optical input port and an optical output port of the silicon-based monolithic integrated quantum key distribution sender chip structure, that is, pin 1 is connected with an internal first intensity modulator, pin 2 is connected with an output port of an internal adjustable optical attenuator, other pins 3-Y are pin pins led out by an internal optical chip electrode pad, and the relation among the pin codes in the figure is as follows: y is greater than or equal to X is greater than or equal to N is greater than or equal to M is greater than or equal to 3. In the package structure, the pins 1 and 2 serving as the optical input port and the optical output port are positioned on two adjacent sides of the package structure.
The three packaging structures can meet different requirements of practical application occasions.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (7)
1. The silicon-based monolithic integrated quantum key distribution sender chip is characterized by comprising a first intensity modulator, a second intensity modulator, a polarization modulator and at least one adjustable optical attenuator, wherein the first intensity modulator, the second intensity modulator, the polarization modulator and the at least one adjustable optical attenuator are connected end to end, signal light enters from the first intensity modulator, the output end of the adjustable optical attenuator is used as the output end of the chip, the first intensity modulator and the second intensity modulator are of a Mach-Zehnder interferometer structure, and comprise a first optical beam splitter, two paths of first silicon-based phase shifters and an optical combiner, and the first optical beam splitter is respectively connected to the optical combiner through the two paths of first silicon-based phase shifters;
an optical connection channel is established among the first intensity modulator, the second intensity modulator, the polarization modulator and the adjustable optical attenuator through a planar optical waveguide;
the polarization modulator comprises a second light beam splitter, a path of second silicon-based phase shifter and a polarization rotation beam combiner; one path of the second light beam splitter is connected to the polarization rotation beam combiner through a second silicon-based phase shifter, and the other path of the second light beam splitter is directly connected to the polarization rotation beam combiner;
and the optical paths among the second optical beam splitter, the second silicon-based phase shifter and the polarization rotation beam combiner form an optical connection channel through the planar optical waveguide.
2. The silicon-based monolithically integrated quantum key distribution transmitter chip of claim 1, wherein the first silicon-based phase shifter and the second silicon-based phase shifter are single-drive phase shifters using slot line GS structure electrodes or dual-drive phase shifters using coplanar waveguide GSG structure electrodes, and the tunable optical attenuator is an electro-absorption tunable optical attenuator.
3. The silicon-based monolithically integrated quantum key distribution sender chip of claim 1 or 2, wherein the first and second optical splitters are optical splitters of a multimode interferometer or Y-branched optical splitters; the beam combiner is a beam combiner of a multimode interferometer or a Y-branch beam combiner.
4. A silicon-based monolithically integrated quantum key distribution sender chip according to any of claims 1 to 3, wherein the package structure of the chip has Y pins at the periphery, wherein pin 1 and pin 2 are the optical input port and the optical output port of the silicon-based monolithically integrated quantum key distribution sender chip, respectively, i.e. pin 1 is connected to the internal first intensity modulator, pin 2 is connected to the output port of the internal adjustable optical attenuator, and the other pins 3-Y are pin pins led out from the electrodes of the internal optical chip.
5. The silicon-based monolithically integrated quantum key distribution transmitter chip of claim 4 wherein pins 1 and 2, which are optical input and output ports, are located on opposite sides of the package structure.
6. The silicon-based monolithically integrated quantum key distribution transmitter chip of claim 4, wherein pin 1 and pin 2 as the optical input port and the optical output port are located on the same side of the package structure.
7. The silicon-based monolithically integrated quantum key distribution transmitter chip of claim 4 wherein pins 1 and 2, which are optical input and output ports, are located on adjacent sides of the package structure.
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110198189B (en) * | 2019-07-11 | 2020-11-13 | 军事科学院系统工程研究院网络信息研究所 | High-dimensional multiplexing quantum communication method, system and storage medium based on chip integrated optical path |
| CN110417550B (en) * | 2019-07-29 | 2020-10-16 | 中国科学院半导体研究所 | Encoding chip for quantum key distribution |
| CN110324144B (en) * | 2019-07-30 | 2023-09-22 | 江苏亨通问天量子信息研究院有限公司 | Quantum key distribution transmitting end chip, packaging structure and device |
| CN113497705B (en) * | 2020-04-08 | 2023-12-01 | 山东国迅量子芯科技有限公司 | Polarization modulator, driving method and quantum key distribution system |
| CN113452450A (en) * | 2021-06-25 | 2021-09-28 | 中国科学技术大学 | Light polarization modulation method, light polarization modulation module and light chip |
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