CN207543122U - Silicon-based monolithic integrates quantum key distribution sender chip structure and its encapsulating structure - Google Patents
Silicon-based monolithic integrates quantum key distribution sender chip structure and its encapsulating structure Download PDFInfo
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- CN207543122U CN207543122U CN201721742376.5U CN201721742376U CN207543122U CN 207543122 U CN207543122 U CN 207543122U CN 201721742376 U CN201721742376 U CN 201721742376U CN 207543122 U CN207543122 U CN 207543122U
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Abstract
The utility model discloses a kind of silicon-based monolithics to integrate quantum key distribution sender chip structure and its encapsulating structure, chip structure includes the first intensity modulator, second intensity modulator, at least one adjustable optical attenuator, light polarization modulator, first intensity modulator, second intensity modulator, at least one adjustable optical attenuator, light polarization modulator joins end to end, flashlight enters from the first intensity modulator, output terminal of the output terminal of light polarization modulator as chip structure, first intensity modulator and the second intensity modulator structure are identical, including the first beam splitter, two-way the first silicon substrate phase shifter and combiner device, first beam splitter is connected respectively to combiner device by two-way the first silicon substrate phase shifter.The utility model has the following advantages compared with prior art：The utility model has many advantages, such as that compatible with CMOS technology, at low cost, system structure is simple, integrated level is high, test is simple, is easy to encapsulation.
Description
Technical field
The utility model is related to quantum key distribution fields, are more particularly to a kind of silicon-based monolithic and integrate quantum key distribution
Sender's chip structure.
Background technology
The quantum key distribution sender of laboratory and commercialization is that discrete device is built at present：Such as use intensity
Modulator, polarization beam apparatus, phase-modulator, adjustable optical attenuator etc..
As shown in Figure 1, for existing typical quantum key distribution sender light path, quantum key distribution sender's light path
Including intensity modulator IM, polarization beam apparatus PBS1, phase-modulator PM, adjustable optical attenuator VOA, intensity modulator IM, partially
Shake beam splitter PBS1, adjustable optical attenuator VOA is sequentially connected, phase-modulator PM be connected to two polarization beam apparatus PBS1 it
Between.Polarization beam apparatus PBS1 and phase-modulator PM collectively forms polarization state and prepares module, and adjustable optical attenuator is placed on partially
Polarization state is prepared behind module, to prevent Trojan attack, improves safety.
Usually by multiple flanged joints between existing each discrete device, additionally, due to variation such as temperature of environment etc.
It will also result in each device Insertion Loss and fiber link light path change, connected between each discrete device by optical fiber and flange
It connects, can not realize single-chip integration, and is with high costs more, high power consumption is also a urgent problem to be solved in addition.
Utility model content
Highly integrated, small silicon can be realized the technical problem to be solved by the utility model is to provide a kind of
Base single-chip integration quantum key distribution sender's chip structure.
The utility model is to solve above-mentioned technical problem by the following technical programs：It is close that a kind of silicon-based monolithic integrates quantum
Key distribute sender's chip structure, including the first intensity modulator, the second intensity modulator, light polarization modulator, it is at least one can
Optical attenuator, the first intensity modulator, the second intensity modulator, light polarization modulator, at least one adjustable optical attenuator head and the tail
It is connected, flashlight enters from the first intensity modulator, the output terminal of the output terminal of adjustable optical attenuator as chip structure, described
First intensity modulator and the second intensity modulator increase Dare interferometer structure for Mach, including the first beam splitter, two-way the
One silicon substrate phase shifter and combiner device, the first beam splitter are connected respectively to combiner by two-way the first silicon substrate phase shifter
Device.
It is first intensity modulator, the second intensity modulator, light polarization modulator, adjustable as preferred technical solution
Light connects channel is established by planar optical waveguide between optical attenuator.
As preferred technical solution, the light polarization modulator include the second beam splitter, all the way the second silicon substrate phase shifter,
Polarization rotation bundling device；Second beam splitter is connected to polarization rotation bundling device by the second silicon substrate phase shifter all the way, separately
It is directly connected to polarization rotation bundling device all the way.
Light path between second beam splitter, the second silicon substrate phase shifter, polarization rotation bundling device passes through plane light wave
It leads to form light connects channel.
As preferred technical solution, silicon substrate phase shifter is using single driving phase shifter of line of rabbet joint GS structure electrodes or use
The double drive phase shifter of co-planar waveguide GSG structure electrodes, the adjustable optical attenuator are electric absorption type adjustable optical attenuator.
As preferred technical solution, beam splitter is the beam splitter of multi-mode interferometer or the beam splitter of Y-branch；Light
Bundling device is the combiner device of multi-mode interferometer or the combiner device of Y-branch.
The invention also discloses the silicon-based monolithics described in a kind of as above any one scheme to integrate quantum key distribution hair
The encapsulating structure of square chip structure is sent, encapsulating structure periphery has Y pin, and wherein pin 1 and pin 2 is respectively silicon-based monolithic
The light input port and optical output port of integrated quantum key distribution sender's chip structure, i.e. pin 1 connect internal first
Intensity modulator, pin 2 connect the output port of internal adjustable optical attenuator, other pins 3-Y is internal optics chip electricity
The pin feet that pole is drawn.
Wherein, the pin 1 and pin 2 as light input port and optical output port are located at the opposite sides of encapsulating structure.
Alternatively, the pin 1 and pin 2 as light input port and optical output port are located at the same side of encapsulating structure.
Alternatively, the pin 1 and pin 2 as light input port and optical output port are located at the adjacent both sides of encapsulating structure.
The utility model has the following advantages compared with prior art：The utility model has, cost compatible with CMOS technology
It is low, system structure is simple, integrated level is high, test is simple, be easy to encapsulation the advantages that.
Description of the drawings
Fig. 1 is existing typical quantum key distribution sender index path；
Fig. 2 is that the silicon-based monolithic of the utility model embodiment integrates quantum key distribution sender's chip structure figure；
Fig. 3 is the structure principle chart of the intensity modulator of the utility model embodiment；
Fig. 4 is the structure principle chart of the light polarization modulator of the utility model embodiment；
Fig. 5 to Fig. 7 is that the silicon-based monolithic of the utility model embodiment integrates three kinds that quantum key distribution sends square chip
The structure chart of packing forms.
Specific embodiment
Elaborate below to the embodiment of the utility model, the present embodiment using technical solutions of the utility model before
It puts and is implemented, give detailed embodiment and specific operating process, but the scope of protection of the utility model is unlimited
In following embodiments.
As shown in Fig. 2, a kind of silicon-based monolithic integrates quantum key distribution sender's chip structure, including the first intensity modulated
Device, the second intensity modulator, light polarization modulator, at least one adjustable optical attenuator, the first intensity modulator, the second intensity modulated
Device, light polarization modulator, at least one adjustable optical attenuator join end to end, and flashlight enters from the first intensity modulator, tunable optical
Output terminal of the output terminal of attenuator as chip structure.
After flashlight is handled by first intensity modulator, the first pulse train is obtained；Using the second intensity modulated
Obtained after device processing pulse amplitude differ, the second pulse train of period not etc.；It is close that quantum is modulated to using light polarization modulator
Different polarization states needed for key distribution protocol；The light of last different polarization states passes through adjustable optical attenuator by light intensity attenuation to list
Photon level exports.
Pass through plane between first intensity modulator, the second intensity modulator, light polarization modulator, adjustable optical attenuator
Optical waveguide establishes light connects channel；The pattern of optical signal of the planar optical waveguide with transmitting is corresponding.
Simultaneously as shown in fig.3, first intensity modulator and the second intensity modulator increase Dare interferometer for Mach
(MZI) structure is used to implement the function that electric signal is loaded into optical signal, including beam splitter 1, two-way silicon substrate phase shifter with
And combiner device 2, beam splitter 1 are connected respectively to combiner device 2 by two-way silicon substrate phase shifter, into the light of intensity modulator
Divide the two-beam equal for power through the beam splitter 1, and respectively enter the silicon substrate phase shifter all the way, the silicon substrate is moved
Phase device is used to implement the phase shift of optical signal, and the silicon substrate phase shifter output light exports after the combiner device 2 carries out conjunction beam.
Preferably, the silicon substrate phase shifter is to drive phase shifter using the list of line of rabbet joint GS structure electrodes or use co-planar waveguide
The double drive phase shifter of GSG structure electrodes.
Preferably, the beam splitter 1 is the beam splitter of multi-mode interferometer or the beam splitter of Y-branch；It is described photosynthetic
Beam device 2 is the combiner device of multi-mode interferometer or the combiner device of Y-branch.
Preferably, the adjustable optical attenuator is electric absorption type adjustable optical attenuator.
Preferably, while as shown in fig.4, the light polarization modulator include beam splitter 10, all the way silicon substrate phase shifter 30,
Polarization rotation bundling device 20；10 1 tunnel of beam splitter is connected to polarization rotation bundling device 20 by silicon substrate phase shifter 30, separately
It is directly connected to polarization rotation bundling device 20 all the way.The beam splitter 10, silicon substrate phase shifter 30, polarization rotation bundling device 20 it
Between light path pass through planar optical waveguide formed light connects channel.
Preferably, the silicon substrate phase shifter 30 is to drive phase shifter using the list of line of rabbet joint GS structure electrodes or use coplanar wave
Lead the double drive phase shifter of GSG structure electrodes.
Preferably, the beam splitter 10 is the beam splitter of multi-mode interferometer or the beam splitter of Y-branch.
It please refers to shown in Fig. 5 to Fig. 7, the encapsulation of quantum key distribution sender's chip structure is integrated for the silicon-based monolithic
Structure, there are three types of encapsulate：
1st, as shown in figure 5, encapsulating structure periphery has Y pin, wherein pin 1 and pin 2 is respectively silicon-based monolithic collection
Into the light input port and optical output port of quantum key distribution sender's chip structure, i.e. pin 1 connects internal the last the first
Modulator is spent, pin 2 connects the output port of internal adjustable optical attenuator, other pins 3-Y is internal optics chip electrode
The pin feet that pad is drawn, the relationship in figure between each pin code name are：Y≥X≥N≥M≥3.It is defeated as light in the encapsulating structure
The pin 1 and pin 2 of inbound port and optical output port are located at the opposite sides of encapsulating structure.
2nd, as shown in fig. 6, encapsulating structure periphery has Y pin, wherein pin 1 and pin 2 is respectively silicon-based monolithic collection
Into the light input port and optical output port of quantum key distribution sender's chip structure, i.e. pin 1 connects internal the last the first
Modulator is spent, pin 2 connects the output port of internal adjustable optical attenuator, other pins 3-Y is internal optics chip electrode
The pin feet that pad is drawn, the relationship in figure between each pin code name are：Y≥X≥N≥M≥3.It is defeated as light in the encapsulating structure
The pin 1 and pin 2 of inbound port and optical output port are located at the same side of encapsulating structure.
3rd, as shown in fig. 7, encapsulating structure periphery has Y pin, wherein pin 1 and pin 2 is respectively silicon-based monolithic collection
Into the light input port and optical output port of quantum key distribution sender's chip structure, i.e. pin 1 connects internal the last the first
Modulator is spent, pin 2 connects the output port of internal adjustable optical attenuator, other pins 3-Y is internal optics chip electrode
The pin feet that pad is drawn, the relationship in figure between each pin code name are：Y≥X≥N≥M≥3.It is defeated as light in the encapsulating structure
The pin 1 and pin 2 of inbound port and optical output port are located at the adjacent both sides of encapsulating structure.
Above-mentioned three kinds of encapsulating structures can meet the different demands of practical application.
The above is only the preferred embodiment of the utility model only, is not intended to limit the utility model, all at this
All any modification, equivalent and improvement made within the spirit and principle of utility model etc., should be included in the utility model
Protection domain within.
Claims (10)
1. a kind of silicon-based monolithic integrates quantum key distribution sender's chip structure, which is characterized in that including the first intensity modulated
Device, the second intensity modulator, light polarization modulator, at least one adjustable optical attenuator, the first intensity modulator, the second intensity modulated
Device, light polarization modulator, at least one adjustable optical attenuator join end to end, and flashlight enters from the first intensity modulator, tunable optical
Output terminal of the output terminal of attenuator as chip structure, first intensity modulator and the second intensity modulator increase for Mach
Dare interferometer structure leads to including the first beam splitter, two-way the first silicon substrate phase shifter and combiner device, the first beam splitter
It crosses two-way the first silicon substrate phase shifter and is connected respectively to combiner device.
2. silicon-based monolithic according to claim 1 integrates quantum key distribution sender's chip structure, which is characterized in that institute
It states and is established between the first intensity modulator, the second intensity modulator, light polarization modulator, adjustable optical attenuator by planar optical waveguide
Light connects channel.
3. silicon-based monolithic according to claim 1 integrates quantum key distribution sender's chip structure, which is characterized in that institute
It states light polarization modulator and includes the second beam splitter, all the way the second silicon substrate phase shifter, polarization rotation bundling device；The second smooth beam splitting
Device is connected to polarization rotation bundling device by the second silicon substrate phase shifter all the way, and another way is directly connected to polarization rotation bundling device.
4. silicon-based monolithic according to claim 3 integrates quantum key distribution sender's chip structure, which is characterized in that institute
The light path stated between the second beam splitter, the second silicon substrate phase shifter, polarization rotation bundling device forms light company by planar optical waveguide
Connect road.
5. silicon-based monolithic according to claim 3 integrates quantum key distribution sender's chip structure, which is characterized in that institute
State the first silicon substrate phase shifter, the second silicon substrate phase shifter is to drive phase shifter using the list of line of rabbet joint GS structure electrodes or use coplanar wave
The double drive phase shifter of GSG structure electrodes is led, the adjustable optical attenuator is electric absorption type adjustable optical attenuator.
6. quantum key distribution sender's chip structure is integrated according to claim 3 to 5 any one of them silicon-based monolithic, it is special
Sign is that first beam splitter, the second beam splitter are the beam splitter of multi-mode interferometer or the beam splitter of Y-branch；
The combiner device is the combiner device of multi-mode interferometer or the combiner device of Y-branch.
7. a kind of claim 1 to 6 any one of them silicon-based monolithic integrates the envelope of quantum key distribution sender's chip structure
Assembling structure, which is characterized in that encapsulating structure periphery has Y pin, and wherein pin 1 and pin 2 is respectively that silicon-based monolithic integrates
The light input port and optical output port of quantum key distribution sender's chip structure, i.e. pin 1 connect the first internal intensity
Modulator, pin 2 connect the output port of internal adjustable optical attenuator, other pins 3-Y draws for internal optics chip electrode
The pin feet gone out.
8. silicon-based monolithic according to claim 7 integrates the encapsulating structure of quantum key distribution sender's chip structure,
It is characterized in that, the pin 1 and pin 2 as light input port and optical output port are located at the opposite sides of encapsulating structure.
9. silicon-based monolithic according to claim 7 integrates the encapsulating structure of quantum key distribution sender's chip structure,
It is characterized in that, the pin 1 and pin 2 as light input port and optical output port are located at the same side of encapsulating structure.
10. silicon-based monolithic according to claim 7 integrates the encapsulating structure of quantum key distribution sender's chip structure,
It is characterized in that, the pin 1 and pin 2 as light input port and optical output port are located at the adjacent both sides of encapsulating structure.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109814204A (en) * | 2019-03-09 | 2019-05-28 | 北京爱杰光电科技有限公司 | A kind of on piece adjustable optical attenuator based on Mach-Zehnder interferometers |
| CN109962770A (en) * | 2017-12-14 | 2019-07-02 | 科大国盾量子技术股份有限公司 | Silicon-based monolithic integrates quantum key distribution sender chip structure and its encapsulating structure |
| CN109981179A (en) * | 2019-03-09 | 2019-07-05 | 北京爱杰光电科技有限公司 | A kind of single-chip integration QPSK transmitting chip without 90 ° of phase shifters |
| CN110417550A (en) * | 2019-07-29 | 2019-11-05 | 中国科学院半导体研究所 | A kind of coding chip for quantum key distribution |
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2017
- 2017-12-14 CN CN201721742376.5U patent/CN207543122U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109962770A (en) * | 2017-12-14 | 2019-07-02 | 科大国盾量子技术股份有限公司 | Silicon-based monolithic integrates quantum key distribution sender chip structure and its encapsulating structure |
| CN109962770B (en) * | 2017-12-14 | 2024-03-12 | 科大国盾量子技术股份有限公司 | Silicon-based monolithic integrated quantum key distribution sender chip |
| CN109814204A (en) * | 2019-03-09 | 2019-05-28 | 北京爱杰光电科技有限公司 | A kind of on piece adjustable optical attenuator based on Mach-Zehnder interferometers |
| CN109981179A (en) * | 2019-03-09 | 2019-07-05 | 北京爱杰光电科技有限公司 | A kind of single-chip integration QPSK transmitting chip without 90 ° of phase shifters |
| CN110417550A (en) * | 2019-07-29 | 2019-11-05 | 中国科学院半导体研究所 | A kind of coding chip for quantum key distribution |
| CN110417550B (en) * | 2019-07-29 | 2020-10-16 | 中国科学院半导体研究所 | Encoding chip for quantum key distribution |
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