CN109962097A - Diode component and its manufacturing process - Google Patents
Diode component and its manufacturing process Download PDFInfo
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- CN109962097A CN109962097A CN201711427668.4A CN201711427668A CN109962097A CN 109962097 A CN109962097 A CN 109962097A CN 201711427668 A CN201711427668 A CN 201711427668A CN 109962097 A CN109962097 A CN 109962097A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 70
- 229910052751 metal Inorganic materials 0.000 claims abstract description 70
- 230000004888 barrier function Effects 0.000 claims abstract description 59
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 37
- 229920005591 polysilicon Polymers 0.000 claims abstract description 19
- 238000000151 deposition Methods 0.000 claims abstract description 13
- 238000004544 sputter deposition Methods 0.000 claims abstract description 8
- 230000008021 deposition Effects 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 claims description 4
- 238000007740 vapor deposition Methods 0.000 claims description 4
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000007769 metal material Substances 0.000 description 3
- 238000004151 rapid thermal annealing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Abstract
The present invention provides diode components, including oxide layer and doped polysilicon area, and cathodic metal, N-type heavily doped region, N-type lightly doped district, P-doped zone, barrier layer and anode metal that sequence is arranged and electrically conducts；Additionally provide the manufacturing process of diode component: epitaxial growth goes out P-doped zone in N-type lightly doped district；It is inwardly etched in N-type lightly doped district from P-doped zone, forms trenching area；Oxide layer is formed in P-doped zone and N-type lightly doped district surface；The trenching area for being covered with oxide layer is filled up using DOPOS doped polycrystalline silicon；Splash-proofing sputtering metal forms barrier layer, the deposition anode metal on barrier layer in P-doped zone；When forward direction is powered, low conducting voltage is realized by P-doped zone and the Schottky contacts of barrier layer；When reversed energization, high reverse withstand voltage is realized by P-doped zone and the PN junction of N-type lightly doped district formation.
Description
Technical field
The invention belongs to technical field of semiconductor device, are to be related to a kind of diode component and its manufacture more specifically
Technique.
Background technique
Schottky diode has the characteristics that lower than general-purpose diode forward conduction, reverse recovery time is short, main to apply
In rectification, freewheeling circuit.
As shown in figure 11, existing Schottky diode includes: that anode metal 1, barrier layer 2, dielectric oxide 9, N-type are light
Doped region 4, N-type heavily doped region 5 and cathodic metal 6.When forward conduction, anode metal 1 plus forward voltage, when more than barrier layer 2
When Built-in potential, break-over of device, majority carrier participates in conductive (i.e. more sons participate in conductive), so very fast when Reverse recovery, nothing
Trailing phenomenon.
However, the barrier structure of existing Schottky diode is using metal-semiconductor structure, reverse withstand voltage
That generally does is relatively low, such as the Schottky diode of barrier structure is done using metal-silicon semiconductor, and reverse withstand voltage is generally made in
Within 200V, it is restricted in high pressure applications.
Summary of the invention
A kind of first purpose of the invention is to provide a kind of diode component, to solve Schottky two in the prior art
The low technical problem of pole pipe reverse withstand voltage.
To achieve the above object, the technical solution adopted by the present invention is that: diode component, including sequence setting cathode gold
Category, N-type heavily doped region, N-type lightly doped district, P-doped zone, barrier layer and anode metal, the cathodic metal, the N-type weight
Doped region, the N-type lightly doped district, the P-doped zone, the barrier layer and the anode metal electrically conduct, and further include
Oxide layer and doped polysilicon area, the N-type lightly doped district and the P-doped zone are equipped with trenching area, and the trenching area passes through
It wears the P-doped zone and protrudes into the N-type lightly doped district, the oxide layer and the doped polysilicon area are set to the grooving
In area, and the oxide layer is between the N-type lightly doped district and the doped polysilicon area and the P-doped zone and institute
It states between doped polysilicon area, the DOPOS doped polycrystalline silicon and the barrier layer Ohmic contact, the oxide layer and the barrier layer
Contact, the P-doped zone and the barrier layer Schottky contacts.
It further, further include the dielectric oxide for being located at one end of the P-doped zone, the dielectric oxide is set to
Between the barrier layer and the P-doped zone, and a part exposure of the dielectric oxide is in air.
The beneficial effect of diode component provided by the invention is, compared with prior art, two pole provided by the invention
Tube device, it is positive in use, increasing current potential in anode metal, outside the oxide layer in cathodic metal plus low potential, trenching area
It encloses and electronics accumulation occurs, electric current flows to cathodic metal by trenching area from anode metal, and diode component electrically conducts, and passes through P
Type doped region and barrier layer form Schottky contacts, so that P-doped zone stops electronics in P-doped zone after depleted of electrons
It moves again, so that diode component realizes the effect that electric conduction forces down；Reversely in use, adding low potential in anode metal, yin
Pole metal increases current potential, and depleted of electrons occurs for the periphery of the oxide layer in trenching area, and electronics no longer moves, P-doped zone and N-type
The ability that the PN junction that doped region is formed makes diode component have high reverse withstand voltage.
The second object of the present invention is to provide a kind of manufacturing process of diode component, to solve Xiao Te in the prior art
The low technical problem of based diode reverse withstand voltage.
To achieve the above object, the technical solution adopted by the present invention is that: the manufacturing process of diode component, including following step
It is rapid:
Prepare N-type lightly doped district；
P-doped zone is formed in the N-type lightly doped district；
The N-type lightly doped district and the P-doped zone are equipped with trenching area, and the trenching area is adulterated through the p-type
Area simultaneously protrudes into the N-type lightly doped district；
Oxide layer is formed in the P-doped zone and N-type lightly doped district surface, and the oxide layer covers the digging
The side wall in slot area；
The trenching area for being covered with the oxide layer is filled up using DOPOS doped polycrystalline silicon；
Barrier layer is formed in the P-doped zone；
The deposition anode metal on the barrier layer；
N-type heavily doped region is formed away from the side of the P-doped zone in the N-type lightly doped district；
It deposits to form cathodic metal in the N-type heavily doped region.
Further, include: the step of forming the P-doped zone in the N-type lightly doped district
By way of being ion implanted on a wafer, by way of being diffused on boiler tube or by institute
The mode for stating vapour phase epitaxy in N-type lightly doped district forms the P-doped zone.
Further, the trenching area is formed as follows:
Dry etching, which is carried out, inward through reactive ion etching process in the P-doped zone forms the trenching area, institute
Trenching area is stated through the P-doped zone and protrudes into the N-type lightly doped district.
Further, include: the step of forming the barrier layer in the P-doped zone
In the surface deposited metal of the P-doped zone by way of physical sputtering, then by being carried out to the metal
High temperature rapid thermal annealing processing, forms the barrier layer, or the surface by depositing metal in the P-doped zone, through excessively high
Temperature diffuses to form the barrier layer.
Further, the N-type heavy doping is formed in the side away from the P-doped zone of the N-type lightly doped district
The step of area includes:
The N is formed by way of ion implanting in the side away from the P-doped zone of the N-type lightly doped district
Type heavily doped region.
Further, depositing the step of forming the cathodic metal in the N-type heavily doped region includes:
In the side away from the N-type lightly doped district of the N-type heavily doped region by way of physical sputtering or vapor deposition
Deposit cathodic metal.
It further, further include the following step carried out before forming the barrier layer step in the P-doped zone
It is rapid:
Removal is higher than the oxide layer in the P-doped zone and the DOPOS doped polycrystalline silicon higher than the P-doped zone.
It further, further include in removal higher than the oxide layer in the P-doped zone and higher than the P-doped zone
The following steps carried out after DOPOS doped polycrystalline silicon:
Dielectric oxide is formed by way of low temperature depositing in the P-doped zone.
The beneficial effect of the manufacturing process of diode component provided by the invention is that compared with prior art, forward direction makes
Used time increases current potential in anode metal, and it is tired that electronics occurs for the periphery of the oxide layer in cathodic metal plus low potential, trenching area
Product, electric current flow to cathodic metal by trenching area from anode metal, and diode component electrically conducts, the extension in P-doped zone
After growing barrier layer, Schottky contacts are formed by P-doped zone and barrier layer, so that depleted of electrons in P-doped zone
Later, P-doped zone stops electronics to move again, so that diode component realizes the effect that electric conduction forces down；It is reversed in use,
In anode metal plus low potential, cathodic metal increases current potential, and depleted of electrons occurs for the periphery of the oxide layer in trenching area, and electronics is not
It moves again, after epitaxial growth goes out P-doped zone in N-type lightly doped district, P-doped zone is formed with N-doped zone
The ability that PN junction makes diode component have high reverse withstand voltage.
Detailed description of the invention
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to embodiment or description of the prior art
Needed in attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description is only of the invention some
Embodiment for those of ordinary skill in the art without any creative labor, can also be according to these
Attached drawing obtains other attached drawings.
Fig. 1 is the cross section structure schematic diagram of diode component provided in an embodiment of the present invention；
Fig. 2 is cutting after setting P-doped zone in the N-type lightly doped district in diode component provided in an embodiment of the present invention
Face structural schematic diagram；
Fig. 3 is that the cross section structure schematic diagram behind trenching area is arranged in the N-type lightly doped district and P-doped zone of Fig. 2；
Fig. 4 is that the cross section structure schematic diagram after oxide layer is arranged in the N-type lightly doped district and P-doped zone of Fig. 3；
Fig. 5 is that the cross section structure schematic diagram behind doped polysilicon area is arranged in the trenching area Fig. 4 in oxide layer；
Fig. 6 is the oxide layer and the cross section structure schematic diagram after DOPOS doped polycrystalline silicon that Fig. 5 removal is higher than P-doped zone；
Fig. 7 is that the cross section structure schematic diagram after dielectric oxide is arranged in the P-doped zone of Fig. 6；
Fig. 8 is that the cross section structure schematic diagram after barrier layer is arranged in the P-doped zone and dielectric oxide of Fig. 7；
Fig. 9 is that the cross section structure schematic diagram after anode metal is arranged on the barrier layer of Fig. 8；
Figure 10 is that the cross section structure schematic diagram after N-type heavily doped region is arranged in the N-type lightly doped district back side of Fig. 9；
Figure 11 is the schematic cross-section of existing Schottky diode.
1- anode metal；2- barrier layer；3-P type doped region；4-N type lightly doped district；5-N type heavily doped region；6- cathode gold
Belong to；7- oxide layer；The doped polysilicon area 8-；9- dielectric oxide；The trenching area 10-.
Specific embodiment
To facilitate the understanding of the present invention, a more comprehensive description of the invention is given in the following sections with reference to the relevant attached drawings.In attached drawing
Give several embodiments of the invention.But the invention can be realized in many different forms, however it is not limited to this paper institute
The embodiment of description.On the contrary, purpose of providing these embodiments is make it is more thorough and comprehensive to the disclosure.
It should be noted that it can be directly another when element is referred to as " being fixed on " or " being set to " another element
On one element or indirectly on another element.When an element is known as " being connected to " another element, it can
To be directly to another element or be indirectly connected on another element.
It is to be appreciated that term " length ", " width ", "upper", "lower", "front", "rear", "left", "right", "vertical",
The orientation or positional relationship of the instructions such as "horizontal", "top", "bottom" "inner", "outside" is that orientation based on the figure or position are closed
System, is merely for convenience of description of the present invention and simplification of the description, rather than the device or element of indication or suggestion meaning must have
Specific orientation is constructed and operated in a specific orientation, therefore is not considered as limiting the invention.
In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more of the features.In the description of the present invention, the meaning of " plurality " is two or more,
Unless otherwise specifically defined
Referring to Fig. 1, existing be illustrated diode component provided by the invention.Diode component, including sequence are arranged
Cathodic metal 6, N-type heavily doped region 5, N-type lightly doped district 4, P-doped zone 3, barrier layer 2 and anode metal 1, cathodic metal
6, N-type heavily doped region 5, N-type lightly doped district 4, P-doped zone 3, barrier layer 2 and anode metal 1 electrically conduct, and further include oxidation
Layer 7 and doped polysilicon area 8, N-type lightly doped district 4 and P-doped zone 3 are equipped with trenching area 10, and trenching area 10 is adulterated through p-type
Area 3 simultaneously protrudes into N-type lightly doped district 4, and oxide layer 7 and doped polysilicon area 8 are set in trenching area 10, and to be located at N-type light for oxide layer 7
Between doped region 4 and doped polysilicon area 8 and between P-doped zone 3 and doped polysilicon area 8, DOPOS doped polycrystalline silicon and barrier layer 2
Ohmic contact, oxide layer 7 are contacted with barrier layer 2, P-doped zone 3 and 2 Schottky contacts of barrier layer.
Diode component provided by the invention, compared with prior art, diode component provided by the invention, forward direction use
When, increase current potential in anode metal 1, electronics occurs for the periphery of the oxide layer 7 in cathodic metal 6 plus low potential, trenching area 10
Accumulation, electric current flow to cathodic metal 6 by trenching area 10 from anode metal 1, and diode component electrically conducts, and is adulterated by p-type
Area 3 and barrier layer 2 form Schottky contacts, so that P-doped zone 3 stops electronics again in P-doped zone 3 after depleted of electrons
Secondary movement, so that diode component realizes the effect that electric conduction forces down；Reversely in use, in anode metal 1 plus low potential, cathode
Metal 6 increases current potential, and depleted of electrons occurs for the periphery of the oxide layer 7 in trenching area 10, and electronics no longer moves, P-doped zone 3 with
The ability that the PN junction that N-type lightly doped district 4 is formed makes diode component have high reverse withstand voltage.
Further, a kind of specific reality also referring to Fig. 1 and Fig. 7-10, as diode component provided by the invention
Mode is applied, further includes the dielectric oxide 9 positioned at one end of P-doped zone 3, dielectric oxide 9 is set to barrier layer 2 and mixes with p-type
Between miscellaneous area 3, and a part exposure of dielectric oxide 9 is in air.The setting of dielectric oxide 9 improves diode component
Reverse withstand voltage ability, and can stop external foreign matter intrusion diode component in, protection diode device.
Also referring to Fig. 1-10, now the manufacturing process of diode component provided by the invention is illustrated.Diode
The manufacturing process of device, comprising the following steps:
S1, prepare N-type lightly doped district 4；
S2, P-doped zone 3 is formed in N-type lightly doped district 4；
S3, N-type lightly doped district 4 and P-doped zone 3 are equipped with trenching area 10, and trenching area 10 is through P-doped zone 3 and stretches
Enter N-type lightly doped district 4；
S4, oxide layer 7 is formed in P-doped zone 3 and 4 surface of N-type lightly doped district, and oxide layer 7 covers trenching area 10
Side wall；
S5, the trenching area 10 for being covered with oxide layer 7 is filled up using DOPOS doped polycrystalline silicon；
S6, barrier layer 2 is formed in P-doped zone 3；
S7, the deposition anode metal 1 on barrier layer 2；
S8, N-type heavily doped region 5 is formed away from the side of P-doped zone 3 in N-type lightly doped district 4；
S9, cathodic metal 6 is formed in the deposition of N-type heavily doped region 5.
The manufacturing process of diode component provided by the invention, compared with prior art, forward direction is in use, in anode metal
1 increases current potential, and electronics accumulation occurs for the periphery of the oxide layer 7 in cathodic metal 6 plus low potential, trenching area 10, and electric current is from sun
Pole metal 1 flows to cathodic metal 6 by trenching area 10, and diode component electrically conducts, and epitaxial growth goes out in P-doped zone 3
After barrier layer 2, Schottky contacts are formed by P-doped zone 3 and barrier layer 2 so that in P-doped zone 3 depleted of electrons it
Afterwards, P-doped zone 3 stops electronics to move again, so that diode component realizes the effect that electric conduction forces down；It is reversed in use,
In anode metal 1 plus low potential, cathodic metal 6 increases current potential, and depleted of electrons occurs for the periphery of the oxide layer 7 in trenching area 10,
Electronics no longer moves, and after epitaxial growth goes out P-doped zone 3 in N-type lightly doped district 4, P-doped zone 3 is gently mixed with N-type
The ability that the PN junction that miscellaneous area 4 is formed makes diode component have high reverse withstand voltage.
Specifically, the n type material used, which is lightly doped, in N-type to be Si, SiC or GaN, but is not limited to these three materials.
Specifically, the concentration of the dopant material in N-type lightly doped district 4 is 1.0E13cm-3~1.0E16cm-3, doping concentration
Specific value set according to resistance to pressure request, the reverse withstand voltage ability of diode component can be improved in the setting of concentration.
Specifically, the polysilicon of the material selection heavy doping of DOPOS doped polycrystalline silicon, dopant material can be B or P, but be not limited to this
Two kinds of materials.
Preferably, doped polysilicon area 8 can carry out deposition formation by the technique of doped growing in situ, can also pass through elder generation
Deposit polycrystalline silicon, then carry out the mode of impurity diffusion and formed.
Further, referring to Fig.2, a kind of specific embodiment party of the manufacturing process as diode component provided by the invention
Formula, step S2 include:
By way of being ion implanted on a wafer, by way of being diffused on boiler tube or by N
The mode of vapour phase epitaxy forms P-doped zone 3 in type lightly doped district 4.
It is formed by way of ion implantation, by way of being diffused on boiler tube or by way of vapour phase epitaxy
P-doped zone 3 and N-type lightly doped district 4 between may be implemented to combine closely so that electronics is gently mixed in P-doped zone 3 and N-type
Movement is more abundant between miscellaneous area 4.
Specifically, the setting of the concentration of P-doped zone 3 will enable electronics to generate accumulation around oxide layer 7, and
P-doped zone 3 also wants that Schottky contacts can be formed with barrier layer 2, to improve the reverse withstand voltage ability of diode component.
Specifically, the doping concentration of P-doped zone 3 is 1.0E13cm-3~1.0E18cm-3, guarantee P doped region and gesture
Barrier layer 2 forms Schottky contacts, improves the reverse withstand voltage ability of diode component.
Specifically, the P-type material that P-doped zone 3 uses can be Si, InGaAs or InP, but be not limited to these three materials
Material.
Further, Fig. 3-4 is please referred to, a kind of specific reality of the manufacturing process as diode component provided by the invention
Mode is applied, trenching area 10 is formed as follows:
Dry etching, which is carried out, inward through reactive ion etching process in P-doped zone 3 forms trenching area 10, trenching area 10
Through P-doped zone 3 and protrude into N-type lightly doped district 4.
Dry etching is able to achieve anisotropic etching, thus guarantee the fidelity after fine diagrams transfer, therefore, dry method erosion
Quarter is more accurate to the size Control of trenching area 10, can etch the trenching area 10 of required size, trenching area 10 according to demand
Through P-doped zone 3 and protrudes into N-type lightly doped district 4 and can guarantee to be moved to existing n-type doping material in trenching area 10 and also have P
Doping type material improves the reverse withstand voltage ability of diode component.
Specifically, on the one hand the setting of trenching area 10 considers the thickness of oxide layer 7 and the quantity of DOPOS doped polycrystalline silicon filling, wide
Degree cannot be narrow, on the other hand considers the characteristic requirements of product, to obtain higher current density, width cannot be excessively high.
Further, Fig. 1 and Fig. 8-10 are please referred to, one kind of the manufacturing process as diode component provided by the invention
Specific embodiment, step S6 include:
In the surface deposited metal of P-doped zone 3 by way of physical sputtering, then it is quick by carrying out high temperature to metal
Annealing forms barrier layer 2, or the surface by depositing metal in P-doped zone 3, forms potential barrier by High temperature diffusion
Layer 2.
High temperature rapid thermal annealing process advan passes through high temperature rapid thermal annealing work in the activity ratio and mobility that improve implanted dopant
2 surface of barrier layer that skill is formed is more smooth, guarantees barrier layer 2 and P-doped zone 3, oxide layer 7, doped polysilicon area 8, is situated between
Matter oxide layer 9 and anode metal 1 be bonded it is even closer so that be bonded between P-doped zone 3 and barrier layer 2 it is even closer so that
Diode component realizes low conducting voltage.
Specifically, the metal material that barrier layer 2 uses can be one or more of Ti, Pt, Au and Ag, but be not limited to
This 4 kinds of metal materials.
Further, refering to fig. 1 and Figure 10, one kind of the manufacturing process as diode component provided by the invention is specific
Embodiment, step S8 include:
N-type heavily doped region 5 is formed by way of ion implanting away from the side of P-doped zone 3 in N-type lightly doped district 4.
5 impurity of N-type heavily doped region formed by way of ion implanting is more, and projection depth is accurately controlled with dosage,
So that the concentration of the material in N-type heavily doped region 5 is more accurate, the validity of N-type heavily doped region 5 can be reinforced.
Specifically, the concentration of 5 dopant material of N-type heavily doped region is in 1.0E19cm-3More than, guarantee and 6 shape of cathodic metal
At good Ohmic contact.
Specifically, the metal that cathodic metal 6 uses can be Ti, Ni, Ag, Pt or Au, but be not limited to this five kinds of metal materials.
Further, Fig. 5-6 is please referred to, a kind of specific reality of the manufacturing process as diode component provided by the invention
Mode is applied, step S9 includes:
Cathode is deposited by way of physical sputtering or vapor deposition away from the side of N-type lightly doped district 4 in N-type heavily doped region 5
Metal 6.
The cathodic metal 6 deposited by way of physical sputtering or vapor deposition can be fitted closely with N-type heavily doped region 5,
So that movement is more abundant between electronic cathode metal 6 and N-type heavily doped region 5.
Further, Fig. 1 and Fig. 7-10 are please referred to, one kind of the manufacturing process as diode component provided by the invention
Specific embodiment further includes the following steps carried out before step S6:
S10, removal are higher than the oxide layer 7 in P-doped zone 3 and the DOPOS doped polycrystalline silicon higher than P-doped zone 3.
After removing extra oxide layer 7 and DOPOS doped polycrystalline silicon, 8 surfacing of P-doped zone 3 and doped polysilicon area,
Guarantee to form good Ohmic contact between DOPOS doped polycrystalline silicon and barrier layer 2, guarantees to be bonded between oxide layer 7 and barrier layer 2 tight
It is close, guarantee that P-doped zone 3 and barrier layer 2 form good Schottky contacts, diode component is allowed to form lower lead
Be powered pressure.
Further, also referring to Fig. 1 and Fig. 7-10, manufacturing process as diode component provided by the invention
A kind of specific embodiment further includes the following steps carried out after step slo:
Dielectric oxide 9 is formed by way of low temperature depositing in P-doped zone 3.
The setting of dielectric oxide 9 is so that diode component has higher reverse withstand voltage ability, and can stop the external world
Foreign matter invades in diode component, protection diode device.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (10)
1. a kind of diode component, cathodic metal, N-type heavily doped region, N-type lightly doped district, p-type doping including sequence setting
Area, barrier layer and anode metal, the cathodic metal, the N-type heavily doped region, the N-type lightly doped district, p-type doping
Area, the barrier layer and the anode metal electrically conduct, it is characterised in that: further include oxide layer and doped polysilicon area, institute
It states N-type lightly doped district and the P-doped zone is equipped with trenching area, the trenching area is through the P-doped zone and protrudes into institute
N-type lightly doped district is stated, the oxide layer and the doped polysilicon area are set in the trenching area, and the oxide layer is located at institute
It states between N-type lightly doped district and the doped polysilicon area and between the P-doped zone and the doped polysilicon area, it is described
DOPOS doped polycrystalline silicon and the barrier layer Ohmic contact, the oxide layer are contacted with the barrier layer, the P-doped zone with it is described
Barrier layer Schottky contacts.
2. diode component as described in claim 1, it is characterised in that: further include positioned at one end of the P-doped zone
Dielectric oxide, the dielectric oxide are set between the barrier layer and the P-doped zone, and the dielectric oxide
A part exposure is in air.
3. a kind of manufacturing process of diode component, it is characterised in that: the following steps are included:
Prepare N-type lightly doped district；
P-doped zone is formed in the N-type lightly doped district；
The N-type lightly doped district and the P-doped zone are equipped with trenching area, and the trenching area runs through the P-doped zone simultaneously
Protrude into the N-type lightly doped district；
Oxide layer is formed in the P-doped zone and N-type lightly doped district surface, and the oxide layer covers the trenching area
Side wall；
The trenching area for being covered with the oxide layer is filled up using DOPOS doped polycrystalline silicon；
Barrier layer is formed in the P-doped zone；
The deposition anode metal on the barrier layer；
N-type heavily doped region is formed away from the side of the P-doped zone in the N-type lightly doped district；
It deposits to form cathodic metal in the N-type heavily doped region.
4. the manufacturing process of diode component as claimed in claim 3, it is characterised in that: the shape in the N-type lightly doped district
Include: at the step of P-doped zone
By way of being ion implanted on a wafer, by way of being diffused on boiler tube or by the N
The mode of vapour phase epitaxy forms the P-doped zone in type lightly doped district.
5. the manufacturing process of diode component as claimed in claim 3, it is characterised in that: the trenching area is as follows
It is formed:
Dry etching, which is carried out, inward through reactive ion etching process in the P-doped zone forms the trenching area, the digging
Slot area is through the P-doped zone and protrudes into the N-type lightly doped district.
6. the manufacturing process of diode component as claimed in claim 3, it is characterised in that: formed in the P-doped zone
The step of barrier layer includes:
In the surface deposited metal of the P-doped zone by way of physical sputtering, then by carrying out high temperature to the metal
Short annealing processing, forms the barrier layer, or
By depositing metal in the surface of the P-doped zone, the barrier layer is formed using High temperature diffusion.
7. the manufacturing process of diode component as claimed in claim 3, it is characterised in that: in the back of the N-type lightly doped district
Side from the P-doped zone forms the step of N-type heavily doped region and includes:
The N-type weight is formed by way of ion implanting in the side away from the P-doped zone of the N-type lightly doped district
Doped region.
8. the manufacturing process of diode component as claimed in claim 3, it is characterised in that: deposited in the N-type heavily doped region
The step of forming the cathodic metal include:
It is deposited by way of physical sputtering or vapor deposition in the side away from the N-type lightly doped district of the N-type heavily doped region
Cathodic metal.
9. the manufacturing process of diode component as claimed in claim 3, it is characterised in that: further include in the P-doped zone
It is upper to form the following steps carried out before the barrier layer step:
Removal is higher than the oxide layer in the P-doped zone and the DOPOS doped polycrystalline silicon higher than the P-doped zone.
10. the manufacturing process of diode component as claimed in claim 9, it is characterised in that: further include being higher than the P in removal
Oxide layer on type doped region and the following steps higher than progress after the DOPOS doped polycrystalline silicon of the P-doped zone:
Dielectric oxide is formed by way of low temperature depositing in the P-doped zone.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6252258B1 (en) * | 1999-08-10 | 2001-06-26 | Rockwell Science Center Llc | High power rectifier |
| CN103180961A (en) * | 2010-10-21 | 2013-06-26 | 威世通用半导体公司 | Improved schottky rectifier |
-
2017
- 2017-12-26 CN CN201711427668.4A patent/CN109962097A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6252258B1 (en) * | 1999-08-10 | 2001-06-26 | Rockwell Science Center Llc | High power rectifier |
| CN103180961A (en) * | 2010-10-21 | 2013-06-26 | 威世通用半导体公司 | Improved schottky rectifier |
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Effective date of registration: 20210210 Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Applicant after: BYD Semiconductor Co.,Ltd. Address before: 518118 BYD Road, Pingshan New District, Shenzhen, Guangdong 3009 Applicant before: BYD Co.,Ltd. |
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Application publication date: 20190702 |