CN109962065A - 一种声表器件的微型化多芯片封装结构 - Google Patents

一种声表器件的微型化多芯片封装结构 Download PDF

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CN109962065A
CN109962065A CN201811450835.1A CN201811450835A CN109962065A CN 109962065 A CN109962065 A CN 109962065A CN 201811450835 A CN201811450835 A CN 201811450835A CN 109962065 A CN109962065 A CN 109962065A
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chip
support plate
module support
micromation
sound table
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王为标
陈云姣
徐彬
袁蔚旻
掌庆冠
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WUXI HAODA ELECTRONIC CO Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

本发明公开了一种声表器件的微型化多芯片封装结构,属于声表器件领域。该微型化多芯片封装结构包括模块载板和至少两个芯片;所述至少两个芯片倒装在所述模块载板上;在所述芯片的背面和未倒装有芯片的模块载板处覆盖有环氧树脂粘合剂;所述芯片的正面与所述模块载板形成空气腔;解决了现有的封装方法难以满足声表器件的封装要求的问题;达到了提高声表器件的力学稳定性和可靠性的效果。

Description

一种声表器件的微型化多芯片封装结构
技术领域
本发明实施例涉及声表器件领域,特别涉及一种声表器件的微型化多芯片封装结构。
背景技术
随着电子技术的持续发展和进步,通信技术的应用实现了质的飞跃,与之相关的芯片行业发生了翻天覆地的变化,多芯片模块被广泛应用于民事、军工、生物等领域。
为了满足不同行业的需求,对多芯片模块的封装要求越来越高,需要向着高性能、高可靠性、低成本、小型化、多功能的趋势发展。目前,常见的表面组装技术(SMT)贴片封装形式有无引线四方扁平封装(QFN)、小外形集成电路封装(SOIC)、球栅数组封装(BGA)等。以球栅数组封装(BGA)为例,其具有成品率高、尺寸较小、电气性能较好以及引脚较坚固的优点,但是,也存在焊点可视性差、焊点容易开裂、返修难度高、布线较难的缺点。
声表器件具有要求芯片表面不能有脏污、不得与其他介质接触的要求,上述几种封装工艺难以满足声表器件的封装要求。
发明内容
为了解决现有技术的问题,本发明实施例提供了一种声表器件的微型化多芯片封装结构。该技术方案如下:
第一方面,提供了一种声表器件的微型化多芯片封装结构,微型化多芯片封装结构包括模块载板和至少两个芯片;
至少两个芯片倒装在模块载板上;
在芯片的背面和未倒装有芯片的模块载板处覆盖有环氧树脂粘合剂;
芯片的正面与模块载板形成空气腔。
可选的,芯片包括芯片晶圆、芯片结构层和芯片内部管脚层;
芯片内部管脚层与模块载板焊接。
可选的,芯片通过焊球倒装在模块载板的焊压层上。
可选的,芯片的边缘与模块载板的边缘之间的距离至少为100微米。
本发明实施例提供的技术方案带来的有益效果是:
利用环氧树脂粘合剂完全包围芯片和模块载板的表面,芯片与模块载板之间形成空气腔,令声表器件的表面不存在脏污,解决了现有的封装技术难以满足声表器件表面不能存在脏污也不得与其他介质接触的问题;此外,还可以令芯片在受到温度变化和振动冲击时,保持力学稳定性,避免受到机械外籍、高温、高湿的损害,提高了多芯片模块的可靠性。
附图说明
为了更清楚地说明本发明实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1是根据一示例性实施例示出的一种声表器件的微型化多芯片封装结构的示意图;
图2是根据另一示例性实施例示出的一种声表器件的微型化多芯片封装结构的俯视剖面图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚,下面将结合附图对本发明实施方式作进一步地详细描述。
请参考图1,其示出了本发明一个实施例提供的声表器件的微型化多芯片封装结构的示意图,该微型化多芯片封装结构为声表器件。如图所示,该微型化多芯片封装结构包括模块载板1和至少两个芯片。
芯片A至芯片X倒装在模块载板1上。
可选的,芯片A与芯片X之间还存在芯片。
模块载板可以分为刚性有机封装基板、挠性基材封装载板、陶瓷载板;模块载板1的厚度在180微米左右;刚性有机封装基板以环氧树脂、BT树脂、ABF树脂为主;挠性基材封装载板以聚酰亚胺、聚酯树脂为主;陶瓷基板以氧化铝、氮化铝、碳化硅为主。
可选的,模块载板1为FR4的刚性有机封装基板。
每个芯片包括芯片晶圆2、芯片结构层3和芯片内部管脚层4。每个芯片通过焊球8倒装在模块载板1的焊压层5上。
芯片的内部管脚层4与模块载板1焊接。
可选的,通过置球凸点法将焊球焊载芯片的芯片内部管脚层4中的管脚上。焊接焊球的过程有惰性气体保护、无需焊机,操作简单快捷、效率高。
可选的,焊球的材料为锡。
利用超声热焊压将焊球焊载模块载板的上方。通过超声热焊压可以令材料迅速软化,易于塑性,降低连接温度,缩短加工处理时间。
焊压后焊球的覆盖直径为70微米,焊球的厚度为12-15微米。
可选的,芯片的边缘与模块载板之间的典型距离为150微米,至少为100微米。
图2示例性地示出了微型化多芯片封装结构的俯视剖面图。
在芯片A至芯片X依次焊接在模块载板1上后,在芯片的背面和未倒装有芯片的模块载板处覆盖环氧树脂粘合剂6。可选的,环氧树脂粘合剂6的附着高度为130微米左右。
环氧树脂粘合剂6与每个芯片的芯片晶圆2接触。
每个芯片的正面与模块载板1形成空气腔7,即芯片与模块载板之间的空间没有环氧树脂粘合剂6。
封装完成后,整个多芯片结构的高度在550-600微米。
利用环氧树脂粘合剂6完全包围芯片和模块载板的表面,使得芯片在受到温度变化和振动冲击时,保持力学稳定性,避免受到机械外籍、高温、高湿的损害,提高了多芯片模块的可靠性。
利用环氧树脂粘合剂进行封装,相比于塑封,可以令声表器件的表面不存在脏污。
本发明提供的声表器件的微型化多芯片封装结构,与DSSP封装方式相比,省去架桥和干膜这两个步骤,使得芯片高度变低,体积变小;除了能倒装多个声表器件之外,还能能够封装其余类型的芯片与电子元器件,可以实现产品的高性能和多功能化;避免了器件级的封装,减少了组装层次,从而有效地提高了可靠性。
需要说明的是,所封装的芯片可以是裸芯片,也可以是封装过的CSP芯片,本发明实施例对此不作限定。
需要说明的是:以上所述仅为本发明的较佳实施例,并不用以限制本发明,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。

Claims (4)

1.一种声表器件的微型化多芯片封装结构,其特征在于,所述微型化多芯片封装结构包括模块载板和至少两个芯片;
所述至少两个芯片倒装在所述模块载板上;
在所述芯片的背面和未倒装有芯片的模块载板处覆盖有环氧树脂粘合剂;
所述芯片的正面与所述模块载板形成空气腔。
2.根据权利要求1所述的微型化多芯片封装结构,其特征在于,所述芯片包括芯片晶圆、芯片结构层和芯片内部管脚层;
所述芯片内部管脚层与所述模块载板焊接。
3.根据权利要求1或2所述的微型化多芯片封装结构,其特征在于,所述芯片通过焊球倒装在所述模块载板的焊压层上。
4.根据权利要求1所述的微型化多芯片封装结构,其特征在于,所述芯片的边缘与所述模块载板的边缘之间的距离至少为100微米。
CN201811450835.1A 2018-11-30 2018-11-30 一种声表器件的微型化多芯片封装结构 Pending CN109962065A (zh)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040213973A1 (en) * 2003-04-23 2004-10-28 Tomihiro Hara Film adhesive for sealing, film laminate for sealing and sealing method
US20050205996A1 (en) * 2004-03-18 2005-09-22 Ryosuke Usui Semiconductor apparatus
CN202818243U (zh) * 2012-09-28 2013-03-20 中国电子科技集团公司第二十六研究所 一种倒装焊封装的多声表裸芯片模块
CN106783814A (zh) * 2016-11-15 2017-05-31 中国电子科技集团公司第二十六研究所 一种薄膜体声波器件裸芯片模组封装结构及封装方法
CN108321123A (zh) * 2018-02-07 2018-07-24 宜确半导体(苏州)有限公司 声学设备及其晶圆级封装方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040213973A1 (en) * 2003-04-23 2004-10-28 Tomihiro Hara Film adhesive for sealing, film laminate for sealing and sealing method
US20050205996A1 (en) * 2004-03-18 2005-09-22 Ryosuke Usui Semiconductor apparatus
CN202818243U (zh) * 2012-09-28 2013-03-20 中国电子科技集团公司第二十六研究所 一种倒装焊封装的多声表裸芯片模块
CN106783814A (zh) * 2016-11-15 2017-05-31 中国电子科技集团公司第二十六研究所 一种薄膜体声波器件裸芯片模组封装结构及封装方法
CN108321123A (zh) * 2018-02-07 2018-07-24 宜确半导体(苏州)有限公司 声学设备及其晶圆级封装方法

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