CN109935591A - 一种记忆体结构及其制造方法 - Google Patents
一种记忆体结构及其制造方法 Download PDFInfo
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- CN109935591A CN109935591A CN201910216042.1A CN201910216042A CN109935591A CN 109935591 A CN109935591 A CN 109935591A CN 201910216042 A CN201910216042 A CN 201910216042A CN 109935591 A CN109935591 A CN 109935591A
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- floating gate
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- gate dielectric
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims description 110
- 239000003989 dielectric material Substances 0.000 claims description 56
- 238000003973 irrigation Methods 0.000 claims description 37
- 230000002262 irrigation Effects 0.000 claims description 37
- 238000000059 patterning Methods 0.000 claims description 36
- 125000006850 spacer group Chemical group 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 13
- 238000009413 insulation Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 73
- 239000011229 interlayer Substances 0.000 claims 1
- 230000005641 tunneling Effects 0.000 abstract description 6
- 230000005684 electric field Effects 0.000 abstract description 3
- 238000000926 separation method Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 34
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000003079 width control Methods 0.000 description 2
- 230000005689 Fowler Nordheim tunneling Effects 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007613 slurry method Methods 0.000 description 1
Abstract
Description
Claims (16)
Priority Applications (1)
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CN201910216042.1A CN109935591B (zh) | 2019-03-21 | 2019-03-21 | 一种记忆体结构及其制造方法 |
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CN201910216042.1A CN109935591B (zh) | 2019-03-21 | 2019-03-21 | 一种记忆体结构及其制造方法 |
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CN109935591A true CN109935591A (zh) | 2019-06-25 |
CN109935591B CN109935591B (zh) | 2024-03-12 |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070132001A1 (en) * | 2005-12-13 | 2007-06-14 | Pin-Yao Wang | Non-volatile memory and manufacturing method and operating method thereof |
JP2013115055A (ja) * | 2011-11-24 | 2013-06-10 | Rohm Co Ltd | 半導体装置および半導体装置の製造方法 |
US9443862B1 (en) * | 2015-07-24 | 2016-09-13 | Sandisk Technologies Llc | Select gates with select gate dielectric first |
CN105990363A (zh) * | 2015-02-06 | 2016-10-05 | 力晶科技股份有限公司 | 双位闪存存储器结构及其制造方法 |
US20160336415A1 (en) * | 2015-05-15 | 2016-11-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory cell structure for improving erase speed |
US20170221911A1 (en) * | 2016-01-29 | 2017-08-03 | United Microelectronics Corp. | Flash memory and method of fabricating the same |
CN209496870U (zh) * | 2019-03-21 | 2019-10-15 | 江苏时代全芯存储科技股份有限公司 | 一种记忆体结构 |
-
2019
- 2019-03-21 CN CN201910216042.1A patent/CN109935591B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070132001A1 (en) * | 2005-12-13 | 2007-06-14 | Pin-Yao Wang | Non-volatile memory and manufacturing method and operating method thereof |
JP2013115055A (ja) * | 2011-11-24 | 2013-06-10 | Rohm Co Ltd | 半導体装置および半導体装置の製造方法 |
CN105990363A (zh) * | 2015-02-06 | 2016-10-05 | 力晶科技股份有限公司 | 双位闪存存储器结构及其制造方法 |
US20160336415A1 (en) * | 2015-05-15 | 2016-11-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory cell structure for improving erase speed |
US9443862B1 (en) * | 2015-07-24 | 2016-09-13 | Sandisk Technologies Llc | Select gates with select gate dielectric first |
US20170221911A1 (en) * | 2016-01-29 | 2017-08-03 | United Microelectronics Corp. | Flash memory and method of fabricating the same |
CN209496870U (zh) * | 2019-03-21 | 2019-10-15 | 江苏时代全芯存储科技股份有限公司 | 一种记忆体结构 |
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Publication number | Publication date |
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CN109935591B (zh) | 2024-03-12 |
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Address after: Room 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing 100094 Applicant after: Beijing times full core storage technology Co.,Ltd. Applicant after: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. Address before: 223300 north of Changjiang East Road and west of Zhongchi Road (No. 601 Changjiang East Road), Huaiyin District, Huai'an City, Jiangsu Province Applicant before: JIANGSU ADVANCED MEMORY TECHNOLOGY Co.,Ltd. Applicant before: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. |
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Effective date of registration: 20231116 Address after: Room 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing 100094 Applicant after: Beijing times full core storage technology Co.,Ltd. Address before: Room 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing 100094 Applicant before: Beijing times full core storage technology Co.,Ltd. Applicant before: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. |
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