CN109923648B - 处理被处理体的方法 - Google Patents

处理被处理体的方法 Download PDF

Info

Publication number
CN109923648B
CN109923648B CN201780068805.1A CN201780068805A CN109923648B CN 109923648 B CN109923648 B CN 109923648B CN 201780068805 A CN201780068805 A CN 201780068805A CN 109923648 B CN109923648 B CN 109923648B
Authority
CN
China
Prior art keywords
gas
layer
etched
plasma
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201780068805.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN109923648A (zh
Inventor
田端雅弘
久松亨
木原嘉英
本田昌伸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN109923648A publication Critical patent/CN109923648A/zh
Application granted granted Critical
Publication of CN109923648B publication Critical patent/CN109923648B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
    • H10P14/6526—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen introduced into an oxide material, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN201780068805.1A 2016-11-07 2017-11-02 处理被处理体的方法 Active CN109923648B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016-217163 2016-11-07
JP2016217163A JP6763750B2 (ja) 2016-11-07 2016-11-07 被処理体を処理する方法
PCT/JP2017/039772 WO2018084255A1 (ja) 2016-11-07 2017-11-02 被処理体を処理する方法

Publications (2)

Publication Number Publication Date
CN109923648A CN109923648A (zh) 2019-06-21
CN109923648B true CN109923648B (zh) 2023-06-23

Family

ID=62076951

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780068805.1A Active CN109923648B (zh) 2016-11-07 2017-11-02 处理被处理体的方法

Country Status (6)

Country Link
US (2) US11081360B2 (https=)
JP (1) JP6763750B2 (https=)
KR (2) KR102571380B1 (https=)
CN (1) CN109923648B (https=)
TW (1) TWI759348B (https=)
WO (1) WO2018084255A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7066565B2 (ja) * 2018-07-27 2022-05-13 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
US10950428B1 (en) * 2019-08-30 2021-03-16 Mattson Technology, Inc. Method for processing a workpiece

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104303273A (zh) * 2012-06-12 2015-01-21 东京毅力科创株式会社 蚀刻方法和等离子体处理装置
CN104508803A (zh) * 2012-08-27 2015-04-08 东京毅力科创株式会社 等离子体处理方法和等离子体处理装置
CN105474368A (zh) * 2013-09-19 2016-04-06 东京毅力科创株式会社 蚀刻方法
CN105489485A (zh) * 2014-10-07 2016-04-13 东京毅力科创株式会社 处理被处理体的方法
CN106057666A (zh) * 2015-04-06 2016-10-26 东京毅力科创株式会社 蚀刻方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5286344A (en) * 1992-06-15 1994-02-15 Micron Technology, Inc. Process for selectively etching a layer of silicon dioxide on an underlying stop layer of silicon nitride
US5571366A (en) * 1993-10-20 1996-11-05 Tokyo Electron Limited Plasma processing apparatus
US5786276A (en) * 1997-03-31 1998-07-28 Applied Materials, Inc. Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of CH3F or CH2F2 and CF4 and O2
US5942446A (en) * 1997-09-12 1999-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. Fluorocarbon polymer layer deposition predominant pre-etch plasma etch method for forming patterned silicon containing dielectric layer
JP3400770B2 (ja) * 1999-11-16 2003-04-28 松下電器産業株式会社 エッチング方法、半導体装置及びその製造方法
KR100480610B1 (ko) 2002-08-09 2005-03-31 삼성전자주식회사 실리콘 산화막을 이용한 미세 패턴 형성방법
US8956980B1 (en) * 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
JP6277004B2 (ja) * 2014-01-31 2018-02-07 株式会社日立ハイテクノロジーズ ドライエッチング方法
US9548303B2 (en) * 2014-03-13 2017-01-17 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET devices with unique fin shape and the fabrication thereof
US9142459B1 (en) * 2014-06-30 2015-09-22 Applied Materials, Inc. Wafer dicing using hybrid laser scribing and plasma etch approach with mask application by vacuum lamination
JP6435667B2 (ja) * 2014-07-01 2018-12-12 東京エレクトロン株式会社 エッチング方法、エッチング装置及び記憶媒体
US9425041B2 (en) * 2015-01-06 2016-08-23 Lam Research Corporation Isotropic atomic layer etch for silicon oxides using no activation

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104303273A (zh) * 2012-06-12 2015-01-21 东京毅力科创株式会社 蚀刻方法和等离子体处理装置
CN104508803A (zh) * 2012-08-27 2015-04-08 东京毅力科创株式会社 等离子体处理方法和等离子体处理装置
CN105474368A (zh) * 2013-09-19 2016-04-06 东京毅力科创株式会社 蚀刻方法
CN105489485A (zh) * 2014-10-07 2016-04-13 东京毅力科创株式会社 处理被处理体的方法
CN106057666A (zh) * 2015-04-06 2016-10-26 东京毅力科创株式会社 蚀刻方法

Also Published As

Publication number Publication date
KR20190075952A (ko) 2019-07-01
KR20230127373A (ko) 2023-08-31
TWI759348B (zh) 2022-04-01
US11081360B2 (en) 2021-08-03
JP2018078138A (ja) 2018-05-17
WO2018084255A1 (ja) 2018-05-11
TW201829835A (zh) 2018-08-16
US20210327719A1 (en) 2021-10-21
US12476115B2 (en) 2025-11-18
KR102571380B1 (ko) 2023-08-25
US20190259627A1 (en) 2019-08-22
JP6763750B2 (ja) 2020-09-30
CN109923648A (zh) 2019-06-21

Similar Documents

Publication Publication Date Title
CN108878285B (zh) 蚀刻方法
US9911607B2 (en) Method of processing target object
CN106067417B (zh) 蚀刻有机膜的方法
US11462412B2 (en) Etching method
KR102735966B1 (ko) 피처리체를 처리하는 방법
KR20230129345A (ko) 플라즈마 처리 장치 및 에칭 방법
TW201820460A (zh) 被處理體之處理方法
CN109417029B (zh) 对被处理体进行处理的方法
US10811274B2 (en) Etching method and plasma processing apparatus
CN108735598B (zh) 蚀刻方法
US12476115B2 (en) Method for processing workpiece
JP4865951B2 (ja) プラズマエッチング方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant