CN109920840A - One kind having L-type SiO2The compound RC-LIGBT device of separation layer - Google Patents

Abstract

The present invention relates to one kind to have L-type SiO₂The compound RC-LIGBT device of separation layer, with L-type SiO₂Separation layer is boundary, is divided into the area LDMOS and the area LIGBT, has the advantage that (1) reduces device electric fields spike in the course of work, avoids and puncture in advance in device surface, to improve breakdown voltage；(2) in forward conduction, device is in steady transient state, no current catastrophe in the conversion process of Three models；(3) in reverse-conducting, the area LDMOS works independently, and N-Collector provides electronics, and P-body is directly injected into hole to drift region under emitter reverse biased, assigns the ducting capacity of the reverse double pole mode of device.By, through simulating, verifying, the breakdown voltage of the compound RC-LIGBT device of the present invention is increased to 206.05V under the conditions of identical parameters；No Snapback phenomenon also has reverse-conducting ability simultaneously.

Description

One kind having L-type SiO2The compound RC-LIGBT device of separation layer

Technical field

The invention belongs to field of semiconductor, and in particular to one kind has L-type SiO₂The compound RC- of separation layer LIGBT device.

Background technique

LIGBT (Lateral Insulated Gate Bipolar Transistor) based on SOI material has insulation The advantages that performance is good, parasitic capacitance is small, lower leakage current and integrated level are high, and its manufacture craft and SOI-CMOS technique It is mutually compatible, it is easy to accomplish.Therefore one of the core component for becoming smart-power IC is widely used in household electrical appliances production by it The fields such as product, eco-friendly car and industrial production are the semiconductor power devices of future market great potential.But LIGBT structure, Two back-to-back diodes are equivalent in reverse-conducting, in the PN that the P-Collector and N-buffer of collector are formed Knot is in reverse-bias state always, therefore LIGBT does not have reversed conductive capability.In order to evade this disadvantage, usually exist One freewheeling diode FWD of inverse parallel (Free Wheeling Diode) is made in the application of LIGBT typical case's inverter circuit with making protection With.With advances in technology, people are in later traditional RC-LIGBT device (Reverse-Conducting Lateral Insulated Gate Bipolar Transistor, inverse conductivity type landscape insulation bar double-pole-type transistor) in, by two pole of afterflow Pipe is integrated into RC-LIGBT, and the technical method used is: replacing the P- of collector part with N-Collector Collector injects electronics to drift region to can be realized N-Collector in reverse-conducting, has it and inversely lead Logical ability, it is as shown in Figure 3 to be arranged in its structure at collector.This technique improves the integrated levels of chip, are greatly reduced Chip area reduces parasitic capacitance, improves the stability of device.It eliminates since temperature difference leads to LIGBT chip and two poles Work mismatch between tube chip, improves the reliability of device.But there are also inborn bad for traditional RC-LIGBT device Gesture: firstly because the introducing of N-Collector, since the P-Collector of heavy doping is for from emitter N⁺The electronics of outflow For be a high potential barrier, block electronics and flow to metal collector.So electrons pass through N-buffer first and flow to current collection The part N-Collector of pole can generate a potential due to out-of-date in electron stream, between N-buffer and P-Collector Poor V_PN.The conversion that this potential difference becomes conduction mode is crucial, in V_PNN is only come from when lower than 0.8V⁺Injected electrons participates in Conduction, RC-LIGBT are under monopole type conduction mode.And with the increase of the electronic current flowed through in N-buffer, work as V_PN It can be more than 0.8V, the PN junction between N-buffer and P-Collector can be opened at this time, and P-Collector is injected to drift region Hole, realizes the conversion of conduction mode at this time, this process will lead to Snapback phenomenon, electric current occurs on curve of output The mutation of voltage influences the dynamic characteristic of device very big.This phenomenon also can make RC-LIGBT used in parallel at low temperature When obstruction is formed to fully opening for the other devices in circuit system.

Summary of the invention

In view of this, the purpose of the present invention is to provide one kind to have L-type SiO₂The compound RC-LIGBT device of separation layer Part.

For achieving the above object, the invention provides the following technical scheme:

One kind having L-type SiO₂The compound RC-LIGBT device of separation layer, the compound RC-LIGBT device includes L Type SiO₂Separation layer, the area LDMOS, the area LIGBT, collector and shared active area.

Preferably, the compound RC-LIGBT device is by the L-type SiO₂Separation layer is divided to form top left region The area LDMOS and the area LIGBT of lower right area.

Preferably, the shared active area includes source electrode, grid, gate oxide, buffer layer and substrate, the grid Oxide layer is located at the source electrode and the L-type SiO₂Between the horizontal end of separation layer, described in the gate oxide surrounds completely Grid.

Preferably, the area LDMOS includes the heavy doping P for the P-body being arranged from left to right⁺The area P, rectangle is lightly doped in area The drift region N-, the area arc N-buffer and the area N-Collector；The wherein heavy doping P of P-body⁺Area is connected with source electrode.

Preferably, the area LDMOS also includes N+ electron emitter, the N+ electron emitter left side and source contact, Above with the heavy doping P of P-body⁺Area's contact, the right side contacts with the area P is lightly doped, contacts below with gate oxide.

Preferably, the horizontal direction in the area LIGBT is disposed with the heavy doping P of P-body from left to right⁺Area is gently mixed The miscellaneous area P, the drift region L-type N-, wherein the heavy doping P of P-body⁺Area is connected with source electrode.

Preferably, the area LIGBT further includes N+ electron emitter, the N+ electron emitter left side and source contact, Contacted above with gate oxide, the right side is contacted with the area P is lightly doped, below with the heavy doping P of P-body⁺Area's contact.

Preferably, the area LIGBT further includes the area N-buffer being arranged in above the vertical end of the drift region the L-type N- (14) area P-Collector and above the area N-buffer.

Preferably, the collector lower part from left to right successively with the area N-Collector, L-type SiO₂Separation layer vertical end And the area P-Collector contact.

The beneficial effects of the present invention are: the invention discloses one kind to have L-type SiO₂The compound RC- of separation layer LIGBT device, device is by L-type SiO₂Separation layer is divided to form the area LDMOS and the area LIGBT, has the advantage that

(1) when puncturing pressure resistance, due to introducing L-type SiO2 separation layer, by the surface field director of transistor device Part is internal, to significantly enhance the internal electric field of device so that the intracorporal field distribution of device is more uniform and intensity more Greatly；The electric field spike that can reduce device part simultaneously, avoids and exhausts as traditional RC-LIGBT device in drift region Just shift to an earlier date breakdown device surface when avalanche breakdown having not yet been reached before, to improve the breakdown potential of compound RC-LIGBT device Pressure.

(2) in forward conduction, the turn on process of compound RC-LIGBT device is divided into three steps:

Step 1: the area LDMOS unipolarity conduction mode, L-type N- of the electronics from the N+ emitter in the area LDMOS injection LDMOS Drift region is flowed out after flowing through the area N-buffer by the area N-collector, the electricity that N+ electron emitter injects in the area LIGBT at this time The hole barrier that son is formed by the heavy doping of the area P-Collector stops, the area P-Collector and the area N-buffer in the area LIGBT The PN junction of formation is in off state, no current；

Step 2: the area P-Collector in the area LIGBT opens as the voltage of the area LDMOS and the area LIGBT collector increases Begin to inject hole to the drift region rectangle N- in the area LIGBT, forms LIGBT+LDMOS hybrid conductive mode；

Step 3: electric current is exponentially increased with voltage, with collection since the area LIGBT is using bipolarity conduction mode Electrode voltage continues growing, therefore compound RC-LIGBT device conduction is based on the bipolarity conduction mode in the area LIGBT；

Therefore the entire conducting process of forward conduction is by being transitioned into LDMOS+LIGBT hybrid conductive mode based on the area LDMOS, after Continuous to be formed based on the bipolarity conduction mode in the area LIGBT, device is in steady transient state, no current mutation in conversion process Situation, so the forward conduction process of compound RC-LIGBT device of the invention is without Snapback phenomenon.

(3) in reverse-conducting, the area LDMOS can be equivalent to the area lightly doped district P P-body and the drift region rectangle N- composition PN junction, PN junction positively biased belong to low potential barrier for the area N-collector opposing electronic, and electronic current is allowed to flow through；And the area LIGBT It can be equivalent to the back-to-back diode of lightly doped district, the drift region L-type N- and P-collector composition, i.e. positive-negative-positive structure, wherein The PN junction positively biased that lightly doped district and the drift region N- are formed, and the drift region L-type N- and P-collector district's groups at PN junction it is reverse-biased, Electronic current is not allowed to flow through；It can be seen that compound RC-LIGBT device of the invention is on its reverse operation with good Independence.

Detailed description of the invention

In order to keep the purpose of the present invention, technical scheme and beneficial effects clearer, the present invention provides following attached drawing and carries out Illustrate:

Fig. 1 is the structural schematic diagram of traditional LDMOS device；

Fig. 2 is the structural schematic diagram of tradition LIGBT device；

Fig. 3 is the structural schematic diagram of traditional RC-LIGBT device；

Fig. 4 is disclosed by the invention a kind of with L-type SiO₂The compound RC-LIGBT device of separation layer, that is, novel RC- The structural schematic diagram of LIGBT device；

Tradition LDMOS, tradition LIGBT, tradition RC-LIGBT and novel RC-LIGBT device of the invention when Fig. 5 is breakdown In drift region, concentration is respectively 1 × 10¹⁴With 2 × 10¹⁴Under avalanche breakdown state under breakdown voltage lateral comparison figure；

Fig. 6 is respectively that tradition LDMOS, tradition LIGBT, tradition RC-LIGBT and novel RC-LIGBT device of the invention exist Drift region concentration is 1 × 10¹⁴When avalanche breakdown state under Potential Distributing lateral comparison figure；

Tradition LDMOS, tradition LIGBT, tradition RC-LIGBT and novel RC-LIGBT device of the invention when Fig. 7 is breakdown In drift region, concentration is respectively 1 × 10¹⁴When three-dimensional electric field intensity lateral comparison figure；

Tradition LDMOS, tradition LIGBT, tradition RC-LIGBT and novel RC-LIGBT device of the invention when Fig. 8 is breakdown In drift region, concentration is respectively 1 × 10¹⁴When, the one-dimensional electric field intensity lateral comparison figure at coordinate Y=0；

Tradition LDMOS, tradition LIGBT, tradition RC-LIGBT and novel RC-LIGBT device of the invention when Fig. 9 is breakdown In drift region, concentration is respectively 1 × 10¹⁴When, the one-dimensional electric field intensity lateral comparison figure at coordinate Y=0.5；

Figure 10 guide that is positive is led in situation, traditional LDMOS, tradition LIGBT, tradition RC-LIGBT and of the invention novel The lateral comparison figure of the output characteristic curve of RC-LIGBT device；

When Figure 11 is forward conduction, in MEDICI simulated environment, tradition RC-LIGBT and sheet under different collector voltages The conduction mode lateral comparison figure of the novel RC-LIGBT device of invention；

When Figure 12 is forward conduction, the area ratio of novel RC-LIGBT device of the invention in the area LDMOS and the area LIGBT Ratio=S1:S2 is respectively 1:3,1:2,1:1, when 2:1, the output characteristic curve longitudinal comparison figure of novel RC-LIGBT device；

Figure 13 is under MEDICI simulated environment, and novel RC-LIGBT device of the invention is in the area LDMOS and the area LIGBT Area ratio Ratio=S1:S2 is respectively 1:3,1:2,1:1, the longitudinal comparison figure of forward conduction current distribution when 2:1；

When Figure 14 is reverse-conducting, traditional LDMOS, tradition LIGBT, tradition RC-LIGBT and novel RC- of the invention The reverse current of LIGBT device and the longitudinal comparison figure of emitter voltage relation curve；

Figure 15 is the area of novel RC-LIGBT device of the invention in the area LDMOS and the area LIGBT in the case of reverse-conducting The ratio between Ratio=S1:S2 be respectively 1:3,1:2,1:1, longitudinal ratio of reverse current and emitter voltage relation curve under 2:1 Compared with figure；

When Figure 16 is reverse-conducting, in MEDICI simulated environment, novel RC-LIGBT device of the invention is in the area LDMOS Area ratio Ratio=S1:S2 with the area LIGBT is respectively 1:3,1:2,1:1, and the reverse current under 2:1 is distributed longitudinal comparison Figure；

When Figure 17 is shutdown, the area ratio of novel RC-LIGBT device of the invention in the area LDMOS and the area LIGBT Ratio=S1:S2 is respectively 1:1.5,1:1,1.5:1,2:1, the longitudinal comparison of 2.5:1 lower turn-off time and collector current Figure；

1 it is wherein N+ electron emitter, 2 be grid, 3 be gate oxide, 4 is source electrode, 5 for the area P is lightly doped, 6 is rectangle The drift region N-, 7 be collector, 8 be the area P-Collector, 9 be the area arc N-buffer, 10 be buffer layer, 11 be lining Bottom, 12 be the area N-Collector, 13 be P-body heavy doping P⁺Area, 14 be the area N-buffer, 15 be the drift region L-type N-, 16 For L-type SiO₂Separation layer, S1 are the area LDMOS, S2 is the area LIGBT.

Specific embodiment

Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from Various modifications or alterations are carried out under spirit of the invention.It should be noted that diagram provided in following embodiment is only to show Meaning mode illustrates basic conception of the invention, and in the absence of conflict, the feature in following embodiment and embodiment can phase Mutually combination.

Wherein, the drawings are for illustrative purposes only and are merely schematic diagrams, rather than pictorial diagram, should not be understood as to this The limitation of invention；Embodiment in order to better illustrate the present invention, the certain components of attached drawing have omission, zoom in or out, not Represent the size of actual product；It will be understood by those skilled in the art that certain known features and its explanation may be omitted and be in attached drawing It is understood that.

The same or similar label correspond to the same or similar components in the attached drawing of the embodiment of the present invention；It is retouched in of the invention In stating, it is to be understood that if there is the orientation or positional relationship of the instructions such as term " on ", "lower", "left", "right", "front", "rear" To be based on the orientation or positional relationship shown in the drawings, be merely for convenience of description of the present invention and simplification of the description, rather than indicate or It implies that signified device or element must have a particular orientation, be constructed and operated in a specific orientation, therefore is described in attached drawing The term of positional relationship only for illustration, is not considered as limiting the invention, for the ordinary skill of this field For personnel, the concrete meaning of above-mentioned term can be understood as the case may be.

One kind having L-type SiO₂The compound RC-LIGBT device of separation layer, structural schematic diagram is as shown in figure 4, include N Grid 2, gate oxide 3, source electrode 4, the area P 5, the drift region rectangle N- 6, collector 7, P- is lightly doped in+electron emitter 1 The area Collector 8, the area arc N-buffer 9, buffer layer 10, substrate 11, the area N-Collector 12, P-body it is heavily doped Miscellaneous P⁺Area 13, the area N-buffer 14, the drift region L-type N- 15, L-type SiO₂Separation layer 16.

With L-type SiO₂L-type SiO in the new type compound RC-LIGBT device of separation layer₂Separation layer is by Device singulation shape At the area the LDMOS S1 of the top left region and area the LIGBT S2 of lower right area, wherein the area LDMOS and the area LIGBT also have shared Active area, shared active area include source electrode 4, grid 2, gate oxide 3, buffer layer 10 and substrate 11.

The area LDMOS in new type compound RC-LIGBT device includes the heavy doping P that P-body is arranged from left to right⁺Area 13, the area P 5, the drift region rectangle N- 6, the area arc N-buffer 9 and the area N-Collector 12 is lightly doped, wherein the weight of P-body Adulterate P⁺Area 13 is connected with source electrode 4；And further include N+ electron emitter 1, the left side is contacted with source electrode 4, above with P-body Heavy doping P⁺Area's contact, the right side contacts with the area P is lightly doped, contacts below with gate oxide, wherein the N- in the area LDMOS Field cutoff layer of the area buffer mainly as the area LDMOS, it is therefore prevented that it is directly connected to after depletion layer extension with the area N-collector, To improve device pressure resistance performance.

The horizontal direction of LIGBT in device is disposed with the heavy doping P of P-body from left to right⁺P is lightly doped in area 13 Area 5, the drift region L-type N- 15, wherein the heavy doping P of P-body⁺Area is connected with source electrode；It further include N+ electron emitter 1, the left side With source contact, contacted above with gate oxide, the right side is contacted with the area P is lightly doped, below with the heavy doping P of P-body⁺Area connects Touching；The area LIGBT further includes that the area N-buffer 14 above the vertical end of L-type drift region is arranged in and is located in the area N-buffer Side the area P-Collector 8, wherein the area N-buffer can under the premise of not influencing the area LDMOS performance the separately adjustable area LIGBT Conduction voltage drop and P-collector at hole emission efficiency.

In compound RC-LIGBT device 7 lower part of collector from left to right successively with the area N-Collector, L-type SiO₂Every Absciss layer and the upper contact in the area P-Collector.

With L-type SiO₂L-type drift region in the new type compound RC-LIGBT device of separation layer passes through epitaxial growth Method is formed, and soi structure, i.e. silicon structure on insulator are formed together with substrate, buffer layer.

Specifically there is L-type SiO by a kind of₂The compound RC-LIGBT device of separation layer is put into coordinate system, corresponding each portion The position divided are as follows:

Share in active area, source electrode 4: ordinate is 0~25 μm, and abscissa is 0~0.3 μm；Grid 2: abscissa 0.5 ~2 μm, ordinate is 19.2~20 μm；Gate oxide 3: ordinate is 19~20.2 μm, and abscissa is 0.3~2.2 μm, grid oxygen Change layer 3 with a thickness of 0.2 μm；Buffer layer 10: abscissa is 0~17 μm, and ordinate is 25~25.375 μm；Substrate 11: horizontal Coordinate is 0~17 μm, and ordinate is 25.375~27.375 μm.

In the area LDMOS, the heavy doping P of P-body⁺Area 13: ordinate is 0~17 μm, and abscissa is 0.3~1.2 μm；N+ Electron emitter 1: abscissa is 0.3~1.2 μm, and ordinate is 17~19 μm；The area P 5 is lightly doped: ordinate is 0~19 μm, horizontal Coordinate is 1.2~1.8 μm；The drift region rectangle N- 6: ordinate is 0~19 μm, and abscissa is 1.8~12.5 μm；Arc N- Buffer 9: abscissa is 10~12.5 μm, and ordinate is 0~4 μm；The area N-collector 12: abscissa is 11~12.5. μ M, ordinate are 0~2 μm.

L-type SiO₂Separation layer 16: horizontal component ordinate is 19~20.2 μm, and abscissa is 2.2~13 μm, vertical portion Abscissa be 12.5~13 μm, ordinate be 0~19 μm.

In the area LIGBT, N+ electron emitter 1: abscissa is 0.3~1.2 μm, and ordinate is 20.2~22.2 μm；P- The heavy doping P of body⁺Area 13: abscissa is 0.3~1.2 μm, and ordinate is 22.2~25 μm；Be lightly doped the area P 5: abscissa is 1.2~1.8 μm, ordinate is 20.2~25 μm；The drift region L-type N- 15: the abscissa of horizontal component is 1.8~17 μm, indulges and sits 20.2~25 μm are designated as, the abscissa of vertical portion is 13~17 μm, and ordinate is 4~20.2 μm；The area P-collector 8: Abscissa is 13~17 μm, and ordinate is 0~2 μm；The area N-buffer 14: abscissa is 13~17 μm, and ordinate is 2~4 μm.

Collector 7: abscissa is 11.5~17 μm, and ordinate is -0.2~0 μm.

It is proposed by the present invention a kind of with L-type SiO₂The compound RC-LIGBT new construction of separation layer, structure such as Fig. 4 institute Show.Its structure includes the N of the emitter being arranged from left to right, grid, the drift region N- of LDMOS, LIGBT^-Drift region, L-type SiO₂ Separation layer, groove profile SiO₂Buried layer, collector.Collector includes buffer layer N-buffer and the encirclement in the area LDMOS of left and right settings Vertical P the collector P-Collector and N- with hole emission ability in the area N-Collector, the area LIGBT wherein The area buffer.

RC-LIGBT mechanism proposed by the invention is:

(1) when puncturing pressure resistance, due to introducing L-type SiO2 separation layer, by the surface field director of transistor device Part is internal, to significantly enhance the internal electric field of device so that the intracorporal field distribution of device is more uniform and intensity more Greatly；The electric field spike that can reduce device part simultaneously, avoids and exhausts as traditional RC-LIGBT device in drift region Just shift to an earlier date breakdown device surface when avalanche breakdown having not yet been reached before, to improve the breakdown potential of compound RC-LIGBT device Pressure.

(2) in forward conduction, the turn on process of compound RC-LIGBT device is divided into three steps:

Step 1: the area LDMOS unipolarity conduction mode, drift of the electronics from the N+ emitter in the area LDMOS injection LDMOS Area is flowed out after flowing through the area N-buffer by the area N-collector, at this time N+ electron emitter injected electrons quilt in the area LIGBT The hole barrier that the heavy doping of the area P-Collector is formed stops, and the area P-Collector and the area N-buffer in the area LIGBT are formed PN junction be in off state, no current；

Step 2: the area P-Collector in the area LIGBT opens as the voltage of the area LDMOS and the area LIGBT collector increases Begin to inject hole to the drift region in the area LIGBT, forms LIGBT+LDMOS hybrid conductive mode；

Step 3: electric current is exponentially increased with voltage, with collection since the area LIGBT is using bipolarity conduction mode Electrode voltage continues growing, therefore compound RC-LIGBT device conduction is based on the bipolarity conduction mode in the area LIGBT；

Therefore the entire conducting process of forward conduction is by being transitioned into LDMOS+LIGBT hybrid conductive mode based on the area LDMOS, after Continuous to be formed based on the bipolarity conduction mode in the area LIGBT, device is in steady transient state, no current mutation in conversion process Situation, so the forward conduction process of compound RC-LIGBT device of the invention is without Snapback phenomenon.

(3) in reverse-conducting, the area LDMOS can be equivalent to the PN junction that the area P and drift region composition is lightly doped in P-body, PN junction Positively biased belongs to low potential barrier for the area N-collector opposing electronic, and electronic current is allowed to flow through；And the area LIGBT can be equivalent to P- Body be lightly doped the area P, the drift region N- and P-collector district's groups at back-to-back diode, i.e. positive-negative-positive structure, wherein P- Body is lightly doped the PN junction positively biased that the area P and the drift region N- are formed, and the PN junction that the drift region N- and P-collector are formed is reverse-biased, Electronic current is not allowed to flow through；It can be seen that compound RC-LIGBT device of the invention is on its reverse operation with good Independence.

It can be obtained by MEDICI simulation software, to provided traditional LDMOS device as shown in Figure 1, as shown in Figure 2 Traditional LIGBT device, traditional RC-LIGBT device as shown in Figure 3 and novel RC- as shown in Figure 4 proposed by the invention LIGBT device carries out emulation comparison, and the simulation parameter of four kinds of structures is consistent in simulation process, wherein N^-Drift region overall thickness is 25 μm, carrier lifetime is 10 μ s, and environment temperature 300K, length is 17 μm, doping concentration N_dWith buffer layer N-buffer's Concentration is adjustable.

Fig. 5 be at room temperature T=300K when, in drift region, concentration is respectively 1 × 10¹⁴、2×10¹⁴When for breakdown when tradition LDMOS, tradition LIGBT, tradition RC-LIGBT and novel RC-LIGBT device are respectively 1 × 10 in drift region concentration Nd¹⁴、2× 10¹⁴Under avalanche breakdown state under, breakdown voltage when reverse breakdown compares figure.The data result emulated by MEDICI is again The curve graph drawn by Origin tool is as shown in Figure 5, it will thus be seen that 1 × 10¹⁴Drift doping concentration under: it is novel The breakdown voltage of RC-LIGBT is much larger than tradition RC-LIGBT structure, and under identical structural parameters, novel RC-LIGBT's is hit Wearing voltage is 206.05V, and the 99.491V breakdown voltage than traditional RC-LIGBT improves 107%；Than traditional LIGBT's 55.103V breakdown voltage improves 273.93%, and the 136.85V breakdown voltage than traditional LDMOS improves 50%.It is same with this When, 2 × 10¹⁴Drift doping concentration under, traditional RC-LIGBT knot is far still greater than in the breakdown voltage of novel RC-LIGBT Structure, under identical structural parameters, the breakdown voltage of novel RC-LIGBT is 154.803V, than traditional RC-LIGBT's 112.957V breakdown voltage improve about 37%.Breakdown voltage than the 45.561V of traditional LIGBT improves 240%, than passing The breakdown voltage of the 112.933V of system LDMOS improves about 37%.It can be seen that in two kinds of drift doping concentrations 1 × 10¹⁴、2 ×10¹⁴Under the breakdown voltage of novel RC-LIGBT device be all the largest.

Tradition LDMOS, tradition LIGBT, tradition RC-LIGBT and novel RC-LIGBT device are being floated when Fig. 6 simulates breakdown Moving area's concentration Nd is 1 × 10¹⁴When, compare figure for the potential under the avalanche breakdown state of 5V/Contour between adjacent equipotential lines； It can be seen that the potential of novel RC-LIGBT transistor is evenly distributed in entire transistor and the density of equipotential lines is much larger than it Its structure, the relatively intensive region of potential becomes sparse below source electrode in each traditional structure originally, this is because internal L-type SiO₂Separation layer guides electric field in vivo into, causes equipotential lines intensive, and breakdown voltage is also above traditional LDMOS, tradition LIGBT, biography System RC-LIGBT device illustrates to introduce L-type SiO₂Separation layer also adds transistor internal electric field strength, reduces device surface Electric field strength.

Fig. 7 is simulated under breakdown conditions, traditional LDMOS, tradition LIGBT, tradition RC-LIGBT and novel RC-LIGBT The three-dimensional electric field of device compares figure, it can be seen that in traditional LDMOS, tradition LIGBT, traditional RC-LIGBT device, all in source An extremely neighbouring existing electric field spike, field distribution is very uneven, and internal field is excessive, this explanation device this The position that peak electric field occurs when that is, drift region is not yet completely depleted, punctures in advance before punch-through breakdown generation.Specifically , this peak value electric field is 21.59285 × 10 in traditional LDMOS device⁵V/ μm, this peak in traditional LIGBT device Being worth electric field is 10.93422 × 10⁵V/ μm, this peak value electric field is 6.854723 × 10 in traditional RC-LIGBT device⁵V/μ m.In addition it can be seen that unlike these three traditional structures, novel RC-LIGBT device L-type SiO₂Separation layer changes The structure of device utilizes the SiO of the higher high dielectric constant of pressure resistance₂Field distribution will occur in traditional architectures originally in medium Extremely unevenly, the problems such as surface field is excessive has carried out extremely effective optimization.As can be seen from Figure 7 entire novel RC- More there is not uniformly and king-sized peak electric field in LIGBT device inside, field distribution, and maximum field is only 2.694096×10⁵V/μm.And compare buried layer SiO₂Place, hence it is evident that find out that the difference of its internal field's kurtosis and internal electric field is small In 2.0 × 10⁵V/μm.Can intuitively it see very much in traditional LDMOS, tradition LIGBT, traditional RC-LIGBT device from Fig. 7 This numerical value illustrates the peak value electric field difference everywhere of novel RC-LIGBT device less, phase much higher than the difference in new device Than for, novel RC-LIGBT device is not susceptible to puncture in early days, depletion layer can be allowed to fully expand to collector, so novel RC-LIGBT device has taller and bigger breakdown voltage.

It is dense in drift region that Fig. 8 simulates traditional LDMOS, tradition LIGBT, tradition RC-LIGBT and novel RC-LIGBT device Spending Nd is 1 × 10¹⁴When, the surface field under avalanche breakdown state compares figure, it can be seen that traditional LDMOS, tradition LIGBT, Traditional RC-LIGBT device has very high surface field.According to MEDICI Simulation result data, the surface of traditional LDMOS device Peak electric field is 2.159285 × 10 present in X=5.5 μm⁶V/μm；The peak surface electric field of traditional LIGBT device occurs It is 1.093422 × 10 at X=5.5 μm⁶V/μm；The peak surface electric field of traditional RC-LIGBT device appears in X=1 μm Place is 0.6854723 × 10⁶V/μm；In contrast, due to introducing L-type SiO in the structure of novel RC-LIGBT device₂Isolation Layer, so that the peak electric field in drift region reduces, peak surface electric field is only present in X=9.875 μm 0.2694096×10⁶V/ μm, it is much smaller than traditional structure.From the point of view of intuitively, the surface field of traditional LDMOS device is maximum, Traditional LIGBT device takes second place, and traditional RC-LIGBT device is smaller, and peak surface electric field is most in contrast for novel RC-LIGBT device Small, according to Resurf principle, reducing and introduce intracorporal novel RC-LIGBT device surface field theoretically has most High breakdown voltage, new construction has exactly used this principle, while simulation result has confirmed this theory, makes novel RC- The breakdown voltage of LIGBT device is significantly optimized.

It is dense in drift region that Fig. 9 simulates traditional LDMOS, tradition LIGBT, tradition RC-LIGBT and novel RC-LIGBT device Spending Nd is 1 × 10¹⁴When, the internal electric field at Y=0.5 under avalanche breakdown state compares figure.It can be seen that novel RC-LIGBT The electric field at Y=0.5 μm of device is the largest, while being also that distribution is most uniform.According to MEDICI Simulation result data It obtains, due to L-type SiO₂The introducing of separation layer, the optimization to device electric fields cause to be not much different there are two in device body Peak electric field.As it can be seen in figure 9 that novel RC-LIGBT device is in X compared to traditional devices₁Electric field at=9.875 μm Peak value improves about 4 times, is E.max1=279084.6V/ μm；In X₂It is E.max2=190308.7V/ at=1.80586 μm μm.Intuitively, the ginseng of electric field level compared with can be used as by electric field curve with the closed figure size that X-axis is surrounded It examines, therefore can see internal electric field of traditional LDMOS device at Y=0.5 μm and be lower than novel RC-LIGBT device, but be above Traditional LIGBT device, and traditional RC-LIGBT device electric field is minimum.Illustrate that the structure of novel RC-LIGBT device completes pair The weakening of surface field and enhancing to internal electric field, have achieved the purpose that improve breakdown voltage；And this size order Also the obtaining under MEDICI simulated environment with traditional LDMOS, tradition LIGBT, tradition RC-LIGBT and novel RC-LIGBT device Breakdown voltage size order out is positively correlated.

Figure 10 gives traditional LDMOS, tradition LIGBT, tradition RC-LIGBT and novel RC-LIGBT device in drift region Concentration Nd is 1 × 10¹⁴When, output characteristic curve lateral comparison figure when according to the forward conduction handled with Origin.Such as Figure 10 institute Show, in collector voltage in 0.6V, traditional LDMOS, tradition LIGBT, tradition RC-LIGBT and novel RC-LIGBT device it Between there are apparent slope difference, wherein traditional LDMOS device is as monopole type conductive devices, collector N-collector It is low potential barrier for opposing electronic, electronics is flowed out as carrier from collector, therefore adds the initial of bias voltage in collector Time just has relatively large electronic current to generate；And the collector of tradition LIGBT device only has one of P-collector Point, collector is there are the PN junction that P-collector and N-buffer is constituted, and PN junction is not yet turned on before reaching threshold voltage, No current generates；In contrast, traditional RC-LIGBT and the collector of novel RC-LIGBT device are by N-collector and P- There is unipolarity conduction mode from electronic current to electrons and holes electric current to bipolarity conduction mould in collector composition The conversion process of formula.According to simulation result, it can be seen that traditional LIGBT device is when reaching 0.6V or so cut-in voltage with regard to direct Into ambipolar conduction mode, therefore the equal conditions among traditional LIGBT, tradition RC-LIGBT and novel RC-LIGBT device The electric current of lower tradition LIGBT device is maximum；And there are N- for tradition RC-LIGBT and the collector of novel RC-LIGBT device Collector and P-collector two parts, for traditional RC-LIGBT device due to the introducing of N-Collector, heavy doping P-Collector for from emitter N⁺It is a high potential barrier for the electronics of outflow, blocks electronics and flow to metal current collection Pole, so electrons pass through first when collector voltage is lower than the PN junction threshold value 0.6V between N-buffer and P-Collector N-buffer flows to the part N-Collector of collector, only comes from N at this time⁺The electronics of electron emitter participates in conduction, just As shown in A, C point in figure, it is in RC-LIGBT device under monopole type conduction mode.As shown in Figure 10, with collector electricity Pressure increases, and the electronic current flowed through in N-buffer increases, V_PNValue can be more than 0.6V, at this time N-buffer and P- PN junction between Collector can be opened, and P-Collector injects hole to drift region, realize the conversion of conduction mode at this time, Have from N⁺Electronics and participated in from P-collector it is conductive, as shown in B, D point in figure.And tradition RC-LIGBT exists Current break is generated during this, will lead to Snapback phenomenon, occurs an apparent voltage folding as shown in Figure 10 It returns.In contrast, novel RC-LIGBT device is due to introducing L-type SiO₂Separation layer, entire conducting process by based on LDMOS to LDMOS+LIGBT mixed mode, then to based on LIGBT, the conversion process of device are in smooth transition state, no current mutation, So forward conduction is without Snapback phenomenon.

Figure 11 show the transistor internal electric current of traditional RC-LIGBT and novel RC-LIGBT device in forward conduction Distribution map, for the A point in Figure 10, the PN junction between the N-buffer and P-Collector of novel RC-LIGBT collector does not have There is unlatching, so as shown be monopole type conduction mode figure, conduction mode is leading with LDMOS at this time, and the area LIGBT, P- Collector is for from emitter N⁺Belong to high potential barrier for the electronics of outflow, blocks electronics and flow to collector, therefore without electricity Miscarriage life；For the B point in Figure 10, between the N-buffer and P-Collector of the collector of novel RC-LIGBT device PN junction voltage has reached 0.6V or more, so being shown as ambipolar conduction mode figure, conduction mode is based on LIGBT at this time It leads, and the electric current in the area LDMOS is very limited；For the C point in Figure 10, the N-buffer of traditional RC-LIGBT device collector PN junction between P-Collector is not turned on, and only electronics is as current-carrying subconductivity at this time, and N-collector is as collection The low potential barrier circulating electronic of the electronic current of electrode, and P-collector does not allow electronics to flow through as high potential barrier, such as Figure 11 institute Show, electronics flows only through N-collector at this time；For the D point in Figure 10, the N-buffer of traditional RC-LIGBT device collector PN junction between P-Collector is opened, and not only has the electronics from the electron-emitting area injection drift region N- at this time as current-carrying Subconductivity, there are also the holes of P-collector transmitting as current-carrying subconductivity, and as shown in figure 11, electrons and holes, which both participate in, to be led There is conductivity modulation effect in the drift region N- at this time in electricity, and the resistance on galvanometer access reduces, and traditional RC-LIGBT device goes out Existing Snapback phenomenon, and introduce L-type SiO₂The novel RC-LIGBT device of separation layer is due to introducing L-type SiO₂Separation layer, it is whole A conducting process is by LDMOS+LIGBT mixed mode, then to based on LIGBT conduction mode, the electric current of device turns based on LDMOS It changes process electric current and is in smooth transition state, resistance will not generate mutation, so forward conduction is without Snapback phenomenon.

Figure 12 simulates the novel RC-IGBT device of proposition, by controlling L-type SiO₂The position of separation layer controls The area ratio Ratio in the area LDMOS and the area LIGBT, then longitudinal comparison is made to its output characteristics with MEDICI software.Herein four Kind situation Ratio value is respectively as follows: 1:3,1:2,1:1,2:1.As can be seen that under tetra- kinds of different values of Ratio, device institute table There is differences for existing forward conduction characteristic.As the area LDMOS area increases, the area in the area LIGBT reduces, i.e. the increasing of Ratio Greatly, the drift region current cross section product in the area LDMOS near collector increases, and is learnt by R=ρ * (L/S), the drift in the area LDMOS It moves area's resistance to reduce, explain Ratio shown in small figure in Figure 10 is in collector voltage under the conditions of 1:3,1:2,1:1,2:1 In the case of 0.6V, i.e. device when the threshold voltage VPN of the PN junction of P-collector and N-buffer composition has not yet been reached in the area LIGBT Part is still within the big reason of Ratio value is big under the leading monopole type conduction mode in the area LDMOS collector current；It is being greater than PN junction is opened after 0.6V, and P-collector starts to inject hole to drift region, so device conducts mode is by the area LIGBT Ambipolar conduction mode is leading, is 1:3,1:2,1:1,2:1 in Ratio value, that is, when being gradually increased, the drift region in the area LIGBT The length L of current path increases, and sectional area S reduces.Drift zone resistance R increases, and the variation of resistance is in I-V characteristic curve Slope associated change.So ambipolar conduction mode is relative to monopole when Ratio difference value is 1:3,1:2,1:1,2:1 Corresponding I-V characteristic slope of a curve size order is just opposite under type conduction mode.It can be seen that this variation in Figure 12 Trend.Influence due to Ratio value to device is very big, this is the characteristic parameter that can be furtherd investigate.

Figure 13 gives based under the novel RC-IGBT device forward conduction mode emulated under MEDICI environment, The current distributing figure of device inside, it can be seen that by controlling L-type SiO₂The position of separation layer controls the area LDMOS and LIGBT The area ratio Ratio in area makees longitudinal comparison to its current distribution with MEDICI software emulation result.In L-type SiO₂Isolation At D=5.368 μm of horizontal length of layer, the ratio of Ratio is 1:3；In L-type SiO₂D=7.517 μm of the horizontal length of separation layer When, the ratio of Ratio is 1:2；In L-type SiO₂At D=10.07 μm of the horizontal length of separation layer, the ratio of Ratio is 1:1, L-type SiO₂At D=14.3157 μm of the horizontal length of separation layer, the ratio of Ratio is 2:1.For current path described in Figure 12 Length L and sectional area S are readily seen in Figure 13 with the variation of Ratio value.By adjusting the value of Ratio, directly control new The drift region area in the area LDMOS and the area LIGBT in type RC-LIGBT device becomes the crucial ginseng impacted to device performance Number.

Figure 14 is tradition LDMOS, tradition LIGBT, tradition RC-LIGBT and novel RC-LIGBT device in drift region concentration Nd is 1 × 10¹⁴When, with Origin software handle reverse-conducting when emitter voltage and reverse current density relation curve Compare figure.As shown in figure 14, it is clear that traditional LIGBT device does not have electric current generation under arbitrary emitter reverse bias voltage, Reversed output characteristic curve is always the horizontal linear of a coordinate I=0；And under the conditions of identical parameters, traditional LDMOS, biography System RC-LIGBT and novel RC-LIGBT has good reverse-conducting characteristic, has very big reverse current to generate, can see Out after fully on, under identical emitter voltage, the electric current of traditional LDMOS device is maximum, novel RC-LIGBT device Take second place, traditional RC-LIGBT device electric current is minimum.But as seen from the figure, this size relation with emitter be greater than -0.5V when For sequence on the contrary, at that time there are no by the PN junction unlatching of P-body and N-drift formation, only active area electronics participates in conductive, institute It is even more important with receiving the parameter of the N-collector of electronics.Further there is both sides reason in analysis: (1) in collector Under the same conditions, the collector area part N-collector accounting is different for area, the collector area in traditional LDMOS device There is the area N-collector, area ratio is maximum, and traditional RC-LIGBT device collector is by N-collector and P-collector Composition, accounting is much smaller than traditional LDMOS device, and has L-type SiO₂The novel RC-LIGBT device of separation layer then exists solely The vertical area N-collector and P-collector, causes area ratio adjustable；(2) under comparable size parameter, novel RC- Closer to emitter region, drift region is short in the independent area LDMOS of LIGBT device, leads to its series resistance R_dIt is small, make current vs voltage more It is sensitive.

Ratio value when Figure 15 gives reverse-conducting in novel RC-LIGBT device is respectively 1:3,1:2,1:1,2: When 1, the device reverse current that Origin is drawn can be visually seen RC-LIGBT device with the change curve of emitter bias voltage The size of the reverse current of part and changing there are certain correlativity for Ratio, because proposition has L-type SiO₂Separation layer Novel RC-LIGBT device there is independence when reversed, provide reverse operation ability, and the area LIGBT by the area LDMOS completely Be not involved in the reverse operation of device, as shown in figure 15, novel RC-LIGBT device as transversal device with the area LDMOS and The increase of the area ratio Ratio in the area LIGBT has smaller surface current close under identical emitter reverse bias voltage Degree, that is to say, that because the length L of drift region is elongated, area is just bigger, therefore has more uniform current distribution, because And under identical Parameter Conditions, surface current density reduces as the area in the area LDMOS increases, but electricity when reverse-conducting Stream ability is stronger.

Figure 16 is to have L-type SiO in MEDICI simulated environment₂The novel RC-LIGBT device of separation layer is reversely being led Logical state, when emitter bias voltage is in -0.7539V, when Ratio value is 1:3,1:2,1:1,2:1, device inside electric current Distribution map.As Raio=1:3, size of current is -4.44481 × 10^-5A, surface current density are -154.25098A/cm²；When When Raio=1:2, size of current is -8.04489 × 10^-5A, surface current density are -142.37406A/cm²；Work as Raio=1:1 When, size of current is -1.06981 × 10^-5A, surface current density are -105.49921A/cm²；As Raio=2:1, electric current is big Small is -1.67741 × 10^-5A, surface current density are -81.84914A/cm²；Can obtaining from above data, in bias voltage Under identical reverse-conducting state, the surface current density of novel RC-LIGBT device reduces with the increase of Ratio, this emulation The result shows that increase of the device with Ratio, current distribution is more uniform, can reduce the possibility that transistor generates localized hyperthermia Property, temperature characterisitic is optimized, thermal stability is improved；On the other hand, size of current increases with the increase of Ratio, because The increase of LDMOS section length means that drift region sectional area increases, and under size, Ratio big device current capability is stronger.Institute By the variation of Ratio, can control the area of LDMOS part and the part LIGBT in novel RC-LIGBT device, to adjust It is whole different engineering-environments application under to device particular electrical performance, such as forward conduction characteristic, reverse-conducting characteristic, breakdown characteristics Etc. directive property requirement.

Figure 17 is Origin processing with L-type SiO₂The turn-off characteristic data of the novel RC-LIGBT device of separation layer, As shown in figure 17, Ratio value be respectively 1:1.5,1:1,1.5:1,2:1, when, the drift region length D in the area LDMOS is respectively as follows: 8.589μm,10.07μm,12.88μm,14.3175μm；Obviously, the turn-off time of novel RC-LIGBT and the value of Ratio are close It is related.This is because the variation of Ratio directly influences the drift region length L variation in the area LIGBT, to influence mistake when off Surplus carrier scans out rate when collector voltage increases.As the area turn-off speed that becomes smaller in the area LIGBT is getting faster, When Ratio=1:1.5, device is turned off from 100A to 2.9256 μ s of 62.7741A time-consuming；In Ratio=1:1, device is from 100A Turn off 2.3985 μ s of 59.7136A time-consuming；In Ratio=1.5:1, device collector voltage increases to switch off current almost Do not contribute；In Ratio=2:1, device is turned off from 100A to 1.4318 μ s of 57.09666A time-consuming；But it is regrettably, this With L-type SiO₂The turn-off performance of isolation layer device need to be continued deeper into research, has L-type SiO for this₂Separation layer The research of influence of the area ratio in two autonomous working areas of novel RC-LIGBT to device properties needs to be goed deep into.

In conclusion one kind proposed by the invention has L-type SiO₂The novel RC-LIGBT of separation layer, through simulating, verifying It has characteristics that

(11) breakdown characteristics: L-type SiO₂Separation layer guides the surface field of transistor in vivo into, significantly enhances in vivo Electric field reduces device electric fields spike, avoids and punctures in advance in device surface, to improve breakdown voltage.Identical parameters Condition breakdown voltage reaches 206.05V, breakdown voltage 99.491V high than traditional RC-LIGBT 107%.

(2) forward conduction characteristic: the first step, the area LDMOS unipolarity conduction mode, N of the electronics from LDMOS⁺Emitter note The drift region for entering LDMOS is flowed out after flowing through N-buffer by drain electrode.The area LIGBT N at this time⁺Electron emitter injected electrons quilt The hole barrier of the formation of P-Collector heavy doping stops, the PN that the P-Collector and N-buffer in the area LIGBT are formed In off state, no current, second step, with the area LDMOS and the increase of the area LIGBT collector voltage, the collector in the area LIGBT P-Collector starts to inject hole to drift region, is at this time LIGBT+LDMOS conduction mode.Third step, with collector electricity Pressure is continued growing since the area LIGBT is using bipolarity conduction mode, and electric current is exponentially increased with voltage, so when device conducts with Based on the ambipolar conduction mode of the area LIGBT S2；Entire conducting process is by LDMOS+LIGBT mixed mode, then arriving based on LDMOS Based on LIGBT, the electric current conversion process electric current of device is in steady excessive and is smooth transition, resistance under forward conduction mode It will not be mutated, so forward conduction is without Snapback phenomenon.

(3) reverse-conducting characteristic: the PN junction positively biased of P-body and the drift region N- composition that the area LDMOS can be equivalent to, N- It is low potential barrier for collector opposing electronic, electronic current is allowed to flow through.The area LIGBT can be equivalent to the drift region P-body, N- And the back-to-back diode of P-collector composition, i.e. positive-negative-positive structure, the PN junction that wherein P-body and the drift region N- are formed Positively biased, and the PN junction that the drift region N- and P-collector are formed is reverse-biased, does not allow electronic current to flow through.Embody this novel RC- Good independence of the LIGBT on its reverse operation has excellent reverse operation characteristic.

It is proposed by the present invention a kind of with L-type SiO₂The novel RC-LIGBT of separation layer, it is specific by taking schematic diagram 4 as an example Implementation method includes: to choose p-type<100>crystal orientation zone melting single-crystal liner, grows SiO₂Buffer layer, then epitaxial growth LIGBT The drift region L-type N- formed soi structure.Groove profile area is etched in the drift region N- based on soi structure, first completes LIGBT emitter region, it is first First high concentration ion injects, the area P-body, N+ on the left of high temperature knot.Next growth left side grid oxygen, gate electrode, grid oxygen, then The big L-type SiO being deposited₂Separation layer completes the area LIGBT.It is epitaxially formed the drift region N- of LDMOS again, in the drift region N- Groove profile area is etched, continues ion implanting and forms the area N+, P-body；Next surface difference ion implanting formed LDMOS and The collector N-Collector and P-Collector of LIGBT.It finally punches and deposits emitter collector electrode metal.Finally it is passivated And encapsulate etc..

In the process of implementation, proposed by the present invention a kind of with L-type SiO according to the design requirement of specific device₂Isolation The novel RC-LIGBT of layer, in specific production, substrate material in addition to silicon Si material can be used, also can be used silicon carbide, GaAs, The semiconductor materials such as indium phosphide or germanium silicon replace body silicon.

Finally, it is stated that preferred embodiment above is only used to illustrate the technical scheme of the present invention and not to limit it, although logical It crosses above preferred embodiment the present invention is described in detail, however, those skilled in the art should understand that, can be Various changes are made to it in form and in details, without departing from claims of the present invention limited range.

Claims (9)

1. one kind has L-type SiO₂The compound RC-LIGBT device of separation layer, which is characterized in that the compound RC-LIGBT Device includes L-type SiO₂Separation layer (16), the area LDMOS (S1), the area LIGBT (S2), collector (7) and shared active area.

2. a kind of according to claim 1 have L-type SiO₂The compound RC-LIGBT device of separation layer, which is characterized in that institute Compound RC-LIGBT device is stated by the L-type SiO₂Separation layer (16) segmentation formed top left region the area LDMOS (S1) and The area LIGBT (S2) of lower right area.

3. a kind of according to claim 1 have L-type SiO₂The compound RC-LIGBT device of separation layer, which is characterized in that institute Stating shared active area includes source electrode (4), grid (2), gate oxide (3), buffer layer (10) and substrate (11), the grid Oxide layer (3) is located at the source electrode (4) and the L-type SiO₂Between the horizontal end of separation layer (16), the gate oxide (3) The grid (2) are surrounded completely.

4. a kind of according to claim 1 have L-type SiO₂The compound RC-LIGBT device of separation layer, which is characterized in that institute State the heavy doping P that the area LDMOS (S1) includes the P-body being arranged from left to right⁺The area P (5), rectangle N- drift is lightly doped in area (13) Area (6), the area arc N-buffer (9) and the area N-Collector (12)；The wherein heavy doping P of P-body⁺Area (13) and source electrode (4) it is connected.

5. a kind of according to claim 4 have L-type SiO₂The compound RC-LIGBT device of separation layer, which is characterized in that institute The area LDMOS (S1) is stated also comprising N+ electron emitter (1), N+ electron emitter (1) left side is contacted with source electrode (4), above With the heavy doping P of P-body⁺Area (13) contact, the right side contacts with the area P (5) is lightly doped, contacts below with gate oxide (3).

6. a kind of according to claim 1 have L-type SiO₂The compound RC-LIGBT device of separation layer, which is characterized in that institute The horizontal direction for stating the area LIGBT (S2) is disposed with the heavy doping P of P-body from left to right⁺Area (13), be lightly doped the area P (5), The drift region L-type N- (15), wherein the heavy doping P of P-body⁺Area (13) is connected with source electrode (4).

7. there is L-type SiO according to one kind described in claim 6₂The compound RC-LIGBT device of separation layer, which is characterized in that described The area LIGBT (S2) further includes N+ electron emitter (1), and N+ electron emitter (1) left side is contacted with source electrode (4), above with Gate oxide (3) contact, the right side contacts with the area P (5) is lightly doped, below with the heavy doping P of P-body⁺Area (13) contact.

8. a kind of according to claim 6 have L-type SiO₂The compound RC-LIGBT device of separation layer, which is characterized in that institute State the area LIGBT (S2) further include be arranged the area N-buffer (14) above the drift region the L-type N- (15) vertical end and The area P-Collector (8) above the area N-buffer (14).

9. there is L-type SiO according to one kind described in claim 1₂The compound RC-LIGBT device of separation layer, which is characterized in that described Collector (7) lower part from left to right successively with the area N-Collector (12), L-type SiO₂Separation layer (16) vertical end and P- The area Collector (8) contact.