CN110504307A - A kind of SA-LIGBT device with grid-control collector - Google Patents
A kind of SA-LIGBT device with grid-control collector Download PDFInfo
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
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- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
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Abstract
The present invention relates to a kind of SA-LIGBT devices with grid-control collector, belong to field of electronic devices.The device includes the emitter of setting, grid, N-type drift region, grid-control collector region from left to right.Grid-control collector region includes I buffer layer of N-buffer, II buffer layer of P-collector, N-buffer, P-type electron barrier layer P-base and N-collector from left to right.It is lateral groove profile grid below P-type electron barrier layer P-base and N-collector.When forward conduction, P-type electron barrier layer P-base can stop electronics to flow to N-collector, increase collector short-circuit resistance.By adjusting the length and concentration of P-type electron barrier layer P-base, adjustable collector short-circuit resistance eliminates snapback effect.When shutdown, P-type electron barrier layer can form electron channel, improve carrier extraction efficiency to effectively reduce the turn-off time of device in transoid under gate control voltage at N-type.
Description
Technical field
The invention belongs to field of electronic devices, are related to a kind of SA-LIGBT device with grid-control collector.
Background technique
IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) is commonly called as electric power electricity
" CPU " of sub-device is the core devices of electric power systems.LIGBT(LateralInsulatedGateBipolarTran
Sistor, lateral insulated gate bipolar transistor) it is easily integrated, it is usually applied in power intelligent system, is bipolar devices
Typical Representative.LIGBT has two kinds of current-carrying subconductivity of electrons and holes in conducting, makes it have extremely low conduction voltage drop.
However, a large amount of carriers being stored in drift region can make transistor the phenomenon that tail currents occur when off, make transistor
Generate biggish turn-off power loss.
In order to solve the problems, such as that LIGBT turn-off power loss is big, the turn-off time is long, someone is by the part P- of LIGBT anode
Collector is substituted with N-collector, proposes SA-LIGBT (ShortedAnode
InsulatedGateBipolarTransistor, anode in short circuit type insulated gate bipolar transistor), the device of the type can be
An extracting channel is provided for electronics when shutdown, effectively reduces the turn-off time of transistor.However, N-collector's draws
Enter while also resulting in snapback phenomenon, i.e. for transistor at forward conduction initial stage, electrons flow first to the N- of low potential barrier
Collector, transistor work at this time is in unipolarity conduction mode；With the increase of collector voltage, as P-collector and
The pressure drop V between PN junction that N-buffer is formedPNWhen greater than 0.7V, PN junction conducting, P-collector injects sky into drift region
Cave, occurs conductivity modulation effect, and transistor enters bipolarity conduction mode.And it is changed into bipolarity from unipolarity conduction mode and leads
During power mode, voltage will appear an apparent rebound phenomenon, cause current distribution is uneven even, seriously affect device work
The reliability of work.
In order to eliminate the snapback effect of traditional SA-LIGBT, while guaranteeing its turn-off capacity, needs to SA-LIGBT
It is further improved.
Summary of the invention
In view of this, the purpose of the present invention is to provide a kind of SA-LIGBT devices with grid-control collector.
In order to achieve the above objectives, the invention provides the following technical scheme:
A kind of SA-LIGBT device with grid-control collector, including emitter 1, the N+ electron emission being arranged from left to right
Pole 2, grid 3, gate oxide 4, P-body5, N-type drift region 6, N-buffer I 7, P-collector9, collector I 8, N-
Buffer II 10, P-type electron barrier layer P-base11, N-collector12, collector II 16；Lower section is N-type drift region 6, is situated between
Matter separation layer 14 and P type substrate 15.The underface of P-type electron barrier layer P-base11 and N-collector12 are SiO2Insulation
Layer 13 and grid-control collector 17.
The collector I 8 and collector II 16 are located at the surface of P-collector9 and N-collector12,
Grid-control collector 17 is located at immediately below P-type electron barrier layer P-base11 and N-collector12.17 He of grid-control collector
It is SiO between P-collector9 and N-collector122Insulating layer 13.The grid-control collector 17 and the drift region 6 it
Between by SiO2Insulating layer 13 is isolated.The voltage that collector I 8, collector II 16 and grid-control collector 17 apply when in use is complete
It is identical.
For the present invention compared with traditional SA-LIGBT, collector introduces control gate.In forward conduction, transistor
Emitter ground connection, grid applies the positive voltage of 15V, and applies the positive voltage being gradually increased in collector.It is only electric when just starting
Son flows to N-collector from N+ electron emitter by channel, and the P-type electron barrier layer above grid-control collector is for electricity
It is a barrier height for son, electronics can be stopped to flow to N-collector, so that the resistance in the region increases.And SA-
The snapback model formation of LIGBT can be expressed from the next:
Wherein, VSBFor fold-back voltage, the R when snapback occursdAnd RchThe respectively drift zone resistance and ditch of transistor
Road resistance, RsaFor collector short-circuit resistance.In the above process, P-type electron barrier layer P-base makes the barrier effect of electronics
Collector short-circuit resistance RsaIncrease, to reduce fold-back voltage VSB, achieved the purpose that inhibit snpback.
For the turn-off characteristic of transistor, present invention utilizes a test circuits (circuit structure is as shown in figure 11) to carry out mould
The shutdown of transistor npn npn.The emitter of transistor is grounded first, collector access is slightly below the direct current of breakdown voltage transistor
Voltage, then applying variation range in grid is the alternating voltage that -5V arrives 15V.When grid voltage is 15V, transistor work
In forward conduction mode, internal there are more electrons and holes.Meanwhile grid-control collector has been due to having accessed higher voltage,
Electronics in P-type electron barrier layer P-base can be attracted to close to the side of grid-control collector, make P-base transoid, form one
The electron channel of a connection N-buffer and N-collector.When grid voltage becomes -5V, transistor is turned off, in drift region
Electronics can be absorbed rapidly by above-mentioned electron channel by N-collector.And traditional LIGBT is since there is no N-
Collector can only consume a large amount of carriers in drift region by the compound action of electrons and holes, lead to the turn-off time
It is longer.The present invention utilizes the grid-control principle of MOS device, under the premise of additionally not increasing control terminal, introduces in collector region
Grid-control collector, has not only been solved perfectly traditional SA-LIGBT device bring snapback phenomenon, grid-control current collection when shutdown
The electron channel that pole is formed can also effectively accelerate the turn-off speed of transistor.The length of P-base and dense need to be only adjusted when in use
Degree, just can be effectively controlled the turn-on and turn-off performance of transistor.
The beneficial effects of the present invention are:
(1) it in forward conduction, by adjusting the concentration and length of P-type electron barrier layer P-base, can effectively control
Collector short-circuit resistance, to eliminate the snapback effect of traditional SA-LIGBT.
(2) when turning off, added positive voltage can make P-type electron barrier layer transoid on grid-control collector, form an electricity
Subchannel reduces the turn-off time of transistor to accelerate the extraction speed of electronics.
Other advantages, target and feature of the invention will be illustrated in the following description to a certain extent, and
And to a certain extent, based on will be apparent to those skilled in the art to investigating hereafter, Huo Zheke
To be instructed from the practice of the present invention.Target of the invention and other advantages can be realized by following specification and
It obtains.
Detailed description of the invention
To make the objectives, technical solutions, and advantages of the present invention clearer, the present invention is made below in conjunction with attached drawing excellent
The detailed description of choosing, in which:
Fig. 1 is tradition SA-LIGBT structural schematic diagram；
Fig. 2 is tradition LIGBT structural schematic diagram；
Fig. 3 is a kind of SA-LIGBT (new construction SA-LIGBT) with grid-control collector proposed by the present invention；
Fig. 4 is the equivalent circuit diagram of new construction SA-LIGBT；
Fig. 5 is current diagram of the new construction SA-LIGBT under forward conduction state；Fig. 5 (a) is unipolarity conduction mould
Current diagram under formula, Fig. 5 (b) are the current diagram under bipolarity conduction mode；
When Fig. 6 is forward conduction, traditional SA-LIGBT and P-base concentration is respectively 3 × 1015cm-3、5×1015cm-3、7
×1015cm-3、9×1015cm-3New construction SA-LIGBT i-v curve schematic diagram；
When Fig. 7 is that the length ratio of P-base and N-collector is respectively 0:2,0.5:1.5,0.7:1.3 and 1:1, newly
The forward conduction current-voltage curve of structure SA-LIGBT；
Fig. 8 (a) is new construction SA-LIGBT in forward conduction, at y=0.3 μm, the range of 14.5 μm≤x≤15.5 μm
It is interior, the lateral concentration distribution figure of electronics；Fig. 8 (b) is y=0.3 μm, the specific position of 14.5 μm≤x≤15.5 μm in the transistor
It sets；
Fig. 9 (a) is new construction SA-LIGBT in forward conduction, in the range of x=15.5 μm, 0 μm≤y≤0.6 μm,
Longitudinal concentration profile of electronics；Fig. 9 (b) is x=15.5 μm, and 0 μm≤y≤0.6 μm is in specific location in the transistor；
Figure 10 is current flow diagram when new construction SA-LIGBT is turned off；
Figure 11 is test circuit diagram used in the test transistor turn-off time；
Figure 12 (a) is under shutdown mode, and new construction SA-LIGBT is at y=0.6 μm, 14.8 μm under different collector voltages
The cross direction profiles figure of electron concentration in the range of≤x≤15.8 μm；Figure 12 (b) is y=0.6 μm, 14.8 μm≤x≤15.8 μm
Specific location in the transistor；
Figure 13 is that tradition SA-LIGBT, tradition LIGBT and concentration P-base concentration are respectively 3 × 1015cm-3With 9 ×
1015cm-3When new construction SA-LIGBT turn-off time comparison diagram；
Figure 14 is t1~t4 moment, in y=4 μ m, the electron concentration pair of new construction SA-LIGBT and tradition LIGBT
Than figure；
Figure 15 is tradition SA-LIGBT, the length ratio of tradition LIGBT and P-base and N-collector is respectively 0.5:
The turn-off time comparison diagram of new construction SA-LIGBT when 1 and 1:1；
Figure 16 (a)~Figure 16 (j) is the main technological steps figure for manufacturing new construction SA-LIGBT groove profile collector.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.It should be noted that diagram provided in following embodiment is only to show
Meaning mode illustrates basic conception of the invention, and in the absence of conflict, the feature in following embodiment and embodiment can phase
Mutually combination.
Wherein, the drawings are for illustrative purposes only and are merely schematic diagrams, rather than pictorial diagram, should not be understood as to this
The limitation of invention；Embodiment in order to better illustrate the present invention, the certain components of attached drawing have omission, zoom in or out, not
Represent the size of actual product；It will be understood by those skilled in the art that certain known features and its explanation may be omitted and be in attached drawing
It is understood that.
The same or similar label correspond to the same or similar components in the attached drawing of the embodiment of the present invention；It is retouched in of the invention
In stating, it is to be understood that if there is the orientation or positional relationship of the instructions such as term " on ", "lower", "left", "right", "front", "rear"
To be based on the orientation or positional relationship shown in the drawings, be merely for convenience of description of the present invention and simplification of the description, rather than indicate or
It implies that signified device or element must have a particular orientation, be constructed and operated in a specific orientation, therefore is described in attached drawing
The term of positional relationship only for illustration, is not considered as limiting the invention, for the ordinary skill of this field
For personnel, the concrete meaning of above-mentioned term can be understood as the case may be.
A kind of SA-LIGBT device with grid-control collector, structure are as shown in Figure 3.Including the hair being arranged from left to right
Emitter-base bandgap grading 1, N+ electron emitter 2, grid 3, gate oxide 4, P-body5, N-type drift region 6, N-buffer I 7, P-
Collector9, collector I 8, N-buffer II 10, P-type electron barrier layer P-base11, N-collector12, collector II
16；Lower section is N-type drift region 6, buffer layer 14 and P type substrate 15.P-type electron barrier layer P-base11 and N-
The underface of collector12 is SiO2Insulating layer 13 and grid-control collector 17.
The collector I 8 and collector II 16 are located at the surface of P-collector9 and N-collector12,
Grid-control collector 17 is located at immediately below P-type electron barrier layer P-base11 and N-collector12.17 He of grid-control collector
It is SiO2 insulating layer 13 between P-collector9 and N-collector12.The grid-control collector 17 and the drift region 6 it
Between by SiO2Insulating layer 13 is isolated.The voltage that collector I 8, collector II 16 and grid-control collector 17 apply when in use is complete
It is identical.
A kind of mechanism of SA-LIGBT device with groove profile collector proposed by the present invention is:
It (1), can by adjusting the concentration and length of N-buffer and P-type electron barrier layer P-base in forward conduction
To control P-type electron barrier layer P-base to the barrier effect of electronics, improve collector short-circuit resistance, to eliminate traditional SA-
The snapback effect of LIGBT.
(2) when turning off, added positive voltage can make P-type electron barrier layer P-base transoid on grid-control collector, be formed
One electron channel reduces the turn-off time of transistor to accelerate the extraction speed of electronics.
By MEDICI simulation software, to tradition SA-LIGBT shown in FIG. 1, tradition LIGBT and Fig. 3 institute shown in Fig. 2
The new construction SA-LIGBT shown has carried out emulation and has compared.In simulation process, the simulation parameter of three kinds of transistors is consistent.Wherein
For N-type drift region with a thickness of 25 μm, length is 17 μm, and carrier lifetime is 10 μ s, environment temperature 300K.Wherein, new construction SA-
The length of the P-collector and N-collector of LIGBT are 1 μm, with a thickness of 0.6 μm.P-type electron barrier layer P-base
Initial dopant concentration be 9 × 1015cm-3, initial length is 1 μm, with a thickness of 0.6 μm.SiO2Separation layer 13 with a thickness of 0.1 μ
m.The length of grid-control collector 17 is 2 μm, with a thickness of 0.6 μm.In emulation the N-type drift region concentration of all devices be 1.5 ×
1014cm-3。
Fig. 4 is the equivalent circuit diagram of new construction SA-LIGBT, and a grid-control metal-oxide-semiconductor and N+ electricity are equivalent on the left of transistor
The parallel-connection structure for the NPN triode that sub- emitter/P-body/N-drift is constituted, P-body/N-drift/P-collector is again
PNP triode structure as illustrated in the drawing is constituted, this part is identical with conventional IGBT device, and in the collector of transistor
Region, N-buffer II, P-base, N-collector and grid-control collector can be equivalent to a variable resistance and a grid
Control MOS structure.Under forward conduction mode, variable resistance is considered as the higher collector short-circuit resistance R of a resistance valueSATo hinder
Gear electronics flows to N-collector, to inhibit snapback effect.In the shutdown mode, the high voltage of collector access can
Make P-base by p-type transoid N-type, while the channel of grid-control MOS is opened, and forms an electron channel to accelerate the pass of transistor
The disconnected time.Variable resistance is then equivalent to the channel resistance R of collector control gate at this timeCH2, and collector voltage is higher, RCH2More
Small, the turn-off time of transistor is shorter.
Fig. 5 is current diagram of the new construction SA-LIGBT under forward conduction state, and the lines in figure indicate electric current
Path.When forward conduction, emitter ground connection, grid applies the positive voltage of 15V, and collector applies the positive voltage gradually increased.Its
In, Fig. 5 (a) is the current diagram under unipolarity conduction mode, and Fig. 5 (b) is the current diagram under bipolarity conduction mode.
As can be seen that only small part electric current from N+ electron emitter flows to N-collector from Fig. 5 (a), collector voltage at this time
Smaller, transistor work participates in conductive in unipolarity conduction mode, only electronics, and electric current is smaller.Further, since p-type electronics hinders
Barrier is to the barrier effect of electronics, and electronic current of the new construction SA-LIGBT under unipolarity conduction mode is than traditional SA-LIGBT
It is smaller.It can be seen that the increase with collector voltage from Fig. 5 (b), when the pressure drop between P-collector/N-buffer
When greater than 0.7V, P-collector starts to inject hole into drift region, and transistor enters bipolarity conduction mode, and electric current is fast
Speed increases.In addition, N-collector enhances the attraction power of electronics, while grid-control current collection with the increase of collector voltage
P-type electron barrier layer transoid can extremely be made, an electron channel is formed, more electronics is all made to flow to N-collector.
Fig. 6 is illustrated in forward conduction, and traditional SA-LIGBT and P-base concentration is respectively 3 × 1015cm-3、5×
1015cm-3、7×1015cm-3、9×1015cm-3New construction SA-LIGBT i-v curve schematic diagram.It can from figure
Out, under square one, rebound voltage V when snapback occurs for traditional SA-LIGBTSBMaximum, i.e. tradition SA-LIGBT's
Snapback phenomenon is most obvious.For new construction SA-LIGBT, when P-base concentration minimum, snapback phenomenon is most obvious,
But still it is weaker than traditional SA-LIGBT.With the increase of P-base concentration, the snapback phenomenon of new construction SA-LIGBT gradually subtracts
It is weak；And increase to 9 × 10 in P-base concentration15cm-3, snapback phenomenon disappears substantially.This is because P-base concentration is got over
Greatly, also stronger to the blocking capability of electronic current in unipolarity conduction mode, so that collector short-circuit resistance be made to increase, reach
To the purpose for inhibiting snapback effect.
It is respectively 0:2,0.5:1.5,0.7:1.3 and 1 that Fig. 7, which simulates the length ratio in P-base and N-collector:
When 1, the forward conduction current-voltage curve of new construction SA-LIGBT, during this, P-base and N-collector's is total
Length remains unchanged and the length of grid-control collector is consistent.As can be seen that working as P-base and N-collector long in figure
When degree ratio is 0:2 (i.e. without P-base, N-collector length is consistent with groove profile collector), VSBFor 5.2V, hence it is evident that be higher than it
His three curves, this is because electronic current is not flowed directly into N-collector by the barrier effect of P-base at this time,
Collector short-circuit resistance is smaller, therefore snapback phenomenon is most obvious.As P-base:N-collector=0.5:1.5, curve
VSBIt has been obviously reduced when compared to no P-base, but since P-base length is shorter, it is not strong to the blocking capability of electronics,
Snapback phenomenon does not completely eliminate also.It can be seen that as the value of P-base:N-collector constantly increases, snapback
Phenomenon is in reducing tendency.When the length ratio of P-base and N-collector is 1:1, snapback phenomenon disappears substantially
It loses.For this explanation other than the concentration of adjustment P-base, the length for increasing P-base, which can equally increase, improves P-base to electronics
Barrier height, achieve the purpose that inhibit snapback phenomenon.But the length ratio of P-base and N-collector also can
The turn-off capacity of transistor is had an impact, particular content will discuss later.
Fig. 8 (a) is under forward conduction mode, and the new construction SA-LIGBT of different P-base concentration is in ordinate y=0.3 μ
M, in the range of 14.8 μm≤x≤15.2 μm, the lateral concentration distribution figure of electronics.Wherein, the tool of above range in the transistor
Body position indicates in Fig. 8 (b).As can be seen from Figure 8, the coordinate range of P-base in the transistor is 15 μm≤x
≤ 16 μm, 0 μm≤x≤0.6 μm, x=15 μm be N-buffer and P-base line of demarcation.The entirety of three curves in Fig. 8 (a)
Trend is roughly the same, and electron concentration is all on a declining curve with the increase of x coordinate.In the μ m of 14.5 μm≤x≤15
Electronics is not since also into P-base, the barrier effect being subject to also is it is obvious that making the electron concentration within the scope of this with horizontal seat
The downward trend for marking x is more gentle.After 15 μm of x >, electron concentration quickly reduces with the increase of abscissa x.This illustrates electricity
After son enters P-base, the obstruction of P-base is received, so that the reduced capability of electronics horizontal proliferation.Exactly because above-mentioned mistake
Journey, so that the collector short-circuit resistance of transistor increases, it is suppressed that snapback phenomenon.In addition, can also be seen that from Fig. 8
In the identical situation of coordinate, the concentration of P-base is higher, and the electron concentration at this is also bigger, because of the increase of P-base concentration
Electronic barrier can be improved, so that the electronics being blocked at this becomes more.
Fig. 9 (a) is under forward conduction mode, and the new construction SA-LIGBT under different P-base concentration is in coordinate x=15.5 μ
M, in the range of 0 μm≤y≤0.6 μm, longitudinal concentration profile (i.e. electron concentration on longitudinal bisector of P-base of electronics
Distribution map, shown in specific location such as Fig. 9 (b)).The trend of three curves is also roughly the same in Fig. 9 (a), can specifically be divided into two
A part, at 0 μm≤y≤0.5 μm, electron concentration slowly declines with the increase of y-coordinate；When y >=0.5 μm, electronics is dense
Degree increases sharply with the increase of y-coordinate.The two parts of curve will be illustrated respectively below.When on grid-control collector
Voltage it is higher when, the electronics in P-base can be attracted to lower section and form electron channel, and closer to grid-control collector
The attraction that electronics is subject to is stronger.I.e. in the μ m of 0 μm≤y≤0.5, ordinate y is bigger, is attracted to grid-control collector one
The electronics of side will be more, and the obstruction ability that the electronics flowed transversely through is subject to will be weaker, lead to the electronics being blocked at this
Concentration is lower.The trend that electron concentration is gradually reduced with the increase of y is taken on curve.When y >=0.5 μm, electronics
Concentration is increased rapidly with the increase of y-coordinate, illustrates have a large amount of electronics to flow through within the scope of this.This is because grid-control collector makes
P-base forms electron channel in the range of 0.5 μm≤y≤0.6 μm, and a large amount of electronics flows to N- by this channel
Collector causes the electron concentration within the scope of this higher.When off and this electron channel for electronics provides one
Item is to the extraction path of N-collector, so that the turn-off time of transistor greatly reduces.
Current flow diagram when Figure 10 is shutdown, in transistor.It is as shown in figure 11 to turn off used test circuit.Work as grid
When pole tension is 15V, grid-control collector keeps P-base anti-close to the side of grid-control collector due to having accessed higher voltage
Type forms one layer of electron channel.Electronics can be by this by flowing to N-collector from N-buffer.When grid voltage is from 15V
After becoming -5V, grid groove is turned off, and the hole in drift region is extracted rapidly by P-body, flows out transistor by emitter.
And the electronics in drift region then passes through electron channel and flows to N-collector rapidly from drift region, keeps transistor rapid
Shutdown.
Figure 12 (a) is under shutdown mode, and new construction SA-LIGBT is at y=0.6 μm, 14.8 μm under different collector voltages
The cross direction profiles figure of electron concentration in the range of≤x≤15.8 μm, shown in specific location such as Figure 12 (b).Work as collector voltage
When for 0.1V, the electron concentration in above range is smaller, illustrates that P-base transoid degree is smaller at this time, channel resistance RCH2It is larger.
And with the increase of collector voltage, the electron concentration at channel is higher and higher.This is because with the increase of collector voltage,
The transoid of P-base is more and more obvious, channel resistance RCH2Smaller and smaller, the ability of transistor pulls electronics also can be therewith when shutdown
Enhancing.
Figure 13 simulates influence of the P-base concentration to the new construction SA-LIGBT turn-off time, and joined tradition simultaneously
LIGBT and tradition SA-LIGBT are as a comparison.Collector current drops to from the 90% of primary current when turn-off time refers to test
Time used in 10%.It can be seen that the turn-off time longest of tradition LIGBT, is 830ns；This is because tradition LIGBT is without electricity
Sub- extracting channel, turn-off time longest；And tradition SA-LIGBT is due to there are N-collector electronics extracting channel, when shutdown
Between it is most short, be 40ns.New construction SA-LIGBT is 3 × 10 in P-base concentration15cm-3With 9 × 1015cm-3When the turn-off time distinguish
Equally possess N-collector electronics extracting channel, and because grid-control current collection for 70ns and 100ns, new construction SA-LIGBT
The presence of pole can make P-base transoid when off, form an electron channel, advantageously reduce the turn-off time of transistor,
Therefore the turn-off time is significantly shorter than traditional LIGBT；But due to the presence of P-base, the turn-off time of new construction SA-LIGBT still can
It is slightly longer than traditional SA-LIGBT.From this figure it can be seen that with the increase of P-base concentration, the shutdown of new construction SA-LIGBT
Time gradually increases.This is because the concentration of P-base is higher, it is stronger to the obstruction ability of electronics extraction when off.And
Discussion hereinbefore show that the concentration of P-base the high more is conducive to inhibit snapback effect, therefore in setting P-base concentration
When need to forward conduction and turn-off performance compromise consider.
Figure 14 is t1~t4 moment, in y=4 μ m, the electron concentration pair of new construction SA-LIGBT and tradition LIGBT
Than figure (occurrence of t1~t4 has marked in Figure 13).It can be seen that at t1~t4 moment, inside new construction SA-LIGBT
Electron concentration be respectively less than tradition LIGBT, gradually become in the concentration at t3 and t4 moment, new construction SA-LIGBT internal electron
It is bordering on 0, illustrates that new construction SA-LIGBT has completed turn off process at the t4 moment.And tradition LIGBT is from the t1 moment to the t4 moment,
Electron concentration downward trend is not so good as new construction SA-LIGBT, and at the t4 moment, there are still a large amount of electronics.Illustrate new construction SA-LIGBT
Turn-off performance be much better than traditional LIGBT.
Figure 15 is simulated when the length ratio of P-base and N-collector is respectively 0.5:1.5 and 1:1, new construction
The turn-off time comparison diagram of SA-LIGBT equally joined traditional SA-LIGBT and tradition LIGBT as a comparison.It can be with from figure
Find out, for new construction SA-LIGBT, the turn-off time is still between traditional SA-LIGBT and tradition LIGBT.Wherein, traditional
The turn-off time of SA-LIGBT and tradition LIGBT and above consistent, respectively 40ns and 100ns.In addition, working as P-base:N-
When collector rises to 1:1 from 0.5:1.5, i.e., when P-base length increases, the turn-off time increases to 100ns from 60ns, says
It is elongated that the increase of bright P-base length also results in transistor turn-off time, is also required to compromise in design and considers to transistor just
Influence to conduction property and turn-off performance.
Figure 16 describes the main technological steps of manufacture new construction SA-LIGBT.Main technological steps are divided into 10 steps: (a) In
Emitter region is utilized respectively diffusion and ion implantation technology forms P-body and N-buffer I.(b) pass through two step ion implantings
Technique is respectively formed P-collector and N-buffer II.(c) by etching technics collector region etch one it is recessed
Slot.(d) one layer of SiO is formed in the left side wall of groove and bottom by depositing technics2Insulating layer.(e) according to placed electrode
Depth removes the extra SiO in left side wall top by etching technics2Insulating layer.(f) it places and left side wall SiO2Insulating layer is contour
Metal collector.(g) one layer of SiO is deposited again above metal collector2Insulating layer.(h) SiO above metal collector2
One layer of silicon materials of extension on insulating layer.(i) P-base and N-collector is formed again by two ion implantation technologies.(j)
Gate oxide is formed by deposit and etching technics, finally places metal electrode.
In conclusion a kind of SA-LIGBT device with grid-control collector proposed by the present invention, through simulating, verifying: (1)
Under forward conduction state, snapback effect can be eliminated by adjusting length and the concentration of P-type electron barrier layer P-base
It answers.(2) when off, the turn-off time can be effectively shortened by the length and concentration that adjust P-base；It is new to tie in equal conditions
The turn-off time of structure SA-LIGBT is slightly longer than tradition SA-LIGBT, and is significantly shorter than tradition LIGBT.
Finally, it is stated that the above examples are only used to illustrate the technical scheme of the present invention and are not limiting, although referring to compared with
Good embodiment describes the invention in detail, those skilled in the art should understand that, it can be to skill of the invention
Art scheme is modified or replaced equivalently, and without departing from the objective and range of the technical program, should all be covered in the present invention
Scope of the claims in.
Claims (5)
1. a kind of SA-LIGBT device with grid-control collector, it is characterised in that: set gradually emitter (1), N-type electronics hair
Emitter-base bandgap grading (2), grid (3), gate oxide (4), P-body (5), N-buffer I (7), collector I (8), P-collector (9),
N-buffer II (10), P-type electron barrier layer P-base (11), N-collector (12), collector II (16), lower section is N-type
Drift region (6), buffer layer (14) and P type substrate (15)；
The underface of the P-type electron barrier layer P-base (11) and N-collector (12) are SiO2Insulating layer (13) and grid-control
Collector (17).
2. a kind of SA-LIGBT device with grid-control collector according to claim 1, it is characterised in that: the current collection
Pole I (8) and collector II (16) are individually positioned in the top of P-collector (9) and N-collector (12)；
The grid-control collector (17) is placed on the underface of P-type electron barrier layer P-base (11) and N-collector (12).
3. a kind of SA-LIGBT device with grid-control collector according to claim 2, it is characterised in that: the grid-control
By SiO between collector (17) and P-type electron barrier layer (11), N-collector (12)2Insulating layer (13) isolation.
4. a kind of SA-LIGBT device with grid-control collector according to claim 3, it is characterised in that: the grid-control
By SiO between collector (17) and N-type drift region (6)2Insulating layer (13) isolation；
The collector I (8), collector II (16) are identical with the voltage that grid-control collector (17) applies when in use.
5. a kind of SA-LIGBT device with grid-control collector according to claim 1, it is characterised in that: the N-
The concentration of buffer I (7) and N-buffer II (10) can be controlled independently.
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