CN109860221A - A kind of solar energy laminated cell and preparation method based on graphite alkene electron transfer layer - Google Patents
A kind of solar energy laminated cell and preparation method based on graphite alkene electron transfer layer Download PDFInfo
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- CN109860221A CN109860221A CN201910242401.0A CN201910242401A CN109860221A CN 109860221 A CN109860221 A CN 109860221A CN 201910242401 A CN201910242401 A CN 201910242401A CN 109860221 A CN109860221 A CN 109860221A
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- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 67
- 239000010439 graphite Substances 0.000 title claims abstract description 67
- -1 graphite alkene Chemical class 0.000 title claims abstract description 44
- 230000027756 respiratory electron transport chain Effects 0.000 title claims abstract description 43
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 238000002161 passivation Methods 0.000 claims abstract description 37
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 32
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 19
- 239000002131 composite material Substances 0.000 claims abstract description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 17
- 230000006872 improvement Effects 0.000 claims abstract description 13
- 230000005540 biological transmission Effects 0.000 claims abstract description 12
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000013078 crystal Substances 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 230000001681 protective effect Effects 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 70
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 claims description 12
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 claims description 12
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 claims description 12
- 230000005525 hole transport Effects 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 claims description 9
- 230000005484 gravity Effects 0.000 claims description 8
- 239000003960 organic solvent Substances 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 150000001768 cations Chemical class 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 7
- 229910015711 MoOx Inorganic materials 0.000 claims description 6
- 229910052736 halogen Inorganic materials 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- 150000003384 small molecules Chemical class 0.000 claims description 6
- 238000003756 stirring Methods 0.000 claims description 6
- 150000001450 anions Chemical class 0.000 claims description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 5
- 150000002892 organic cations Chemical class 0.000 claims description 5
- 108010078791 Carrier Proteins Proteins 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 150000002367 halogens Chemical class 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 235000008216 herbs Nutrition 0.000 claims description 3
- 239000011268 mixed slurry Substances 0.000 claims description 3
- 239000002002 slurry Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 210000002268 wool Anatomy 0.000 claims description 3
- 125000005843 halogen group Chemical group 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 6
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 12
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 5
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 8
- 238000004770 highest occupied molecular orbital Methods 0.000 description 6
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 229910021389 graphene Inorganic materials 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229930192474 thiophene Natural products 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 150000001345 alkine derivatives Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000001699 photocatalysis Effects 0.000 description 3
- 238000007146 photocatalysis Methods 0.000 description 3
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000021615 conjugation Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229940126062 Compound A Drugs 0.000 description 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of solar energy laminated cells and preparation method based on graphite alkene electron transfer layer, it is related to technical field of solar batteries, the present invention includes sequentially connected silicon nitride anti-reflecting film from bottom to top, first aluminum oxide passivation film, phosphorus-diffused layer, P-type crystal silicon, second aluminum oxide passivation film, silicon nitride passivation protective film, TCO composite layer, electron transfer layer, calcium titanium ore bed, hole transmission layer, Hole-injecting Buffer Layer for Improvement and TCO antireflection layer, the material of electron transfer layer is graphite alkene or graphite alkene-TiO2 compound or graphite alkene-PCBM compound, the present invention has simple process, photoelectric conversion efficiency is high, the advantages of improving the water stability of laminated cell.
Description
Technical field
The present invention relates to technical field of solar batteries, more particularly to a kind of based on graphite alkene electron transfer layer
Solar energy laminated cell and preparation method.
Background technique
The release of national photovoltaic plant " leader's plan " proposes the output of component unit power from State-level higher
Technical research requirement, new high request also is proposed to the monolithic transfer efficiency of battery, each battery manufacture commercial city of photovoltaic industry exists
It increases battery research and development and manufactures and designs dynamics to reach improved efficiency requirement, to improve itself product competitiveness.
PERC battery has gradually become the standard manufacturing process technology route of single crystal battery, and the Battery Plant commercial city of mainstream has based on PERC
Battery process, the PERC battery conversion efficiency of current line Battery Plant alreadys exceed 22%, and emerging perovskite-crystal
Silicon laminated cell is a popular research direction of novel solar cell in recent years.Theoretically, the conversion effect of this battery
Rate can achieve 30% or more, and PERC battery is the product that cost performance is optimal in current crystal silicon cell, crystal silicon cell with
The laminated cell of perovskite battery will bring higher transfer efficiency.Laminated cell is generally made of top battery and bottom battery,
Layer of transparent conductive oxide is added between the bottom battery of top, the guide mode resonance of the refractive-index-guiding of top inside battery can be excited
Light is fallen into, effectively obstructs top cell guided wave optically coupling to bottom cell, such as uses ITO as tunnel junctions, hole electricity can be separated
Son is right, and in addition an important feature in perovskite battery is electron transfer layer, can permit electronics and passes through, and effectively stops empty
Cave can be used as electron transfer layer by, for example, TiO2.
The patent (CN201510382778.8) of Nanjing University's application, electron transfer layer can use ZnO, TiO2, PCBM,
The patent (CN201520035816.8) of Wuhan University's application, uses SnO2 as electron transfer layer, is primarily due to SnO2 to calcium
The decomposition ratio TiO2 of titanium ore light-absorption layer is weak, the patent of Guangzhou Energy Resource Inst., Chinese Academy of Sciences's application
(CN201410281030.4), it uses TiO2 nano-tube array as electron transfer layer, is mainly used for photocatalysis field.With traditional
For metal oxide as electron transfer layer, preparation method is magnetron sputtering or spin coating, so that perovskite laminated cell always prepares work
The various complexity of skill step, and the water stability of perovskite battery is poor, therefore develops of the invention a kind of based on graphite alkene electronics biography
Perovskite lamination electricity can be improved based on graphite alkene as electron transfer layer in the solar energy laminated cell and preparation method of defeated layer
The energy conversion efficiency in pond improves the water stability of perovskite battery, simplifies battery preparation technique step, Chinese Academy of Sciences's physics
Applied patent (CN201410610637.2) is studied, using graphite alkene material as the hole transmission layer of perovskite battery, but
It is not used for perovskite-crystalline silicon PERC laminated cell electron transfer layer.
Therefore above-mentioned technical problem how is solved, there is very much realistic meaning to those skilled in the art.
Summary of the invention
It is an object of the invention to: use traditional metal oxide to pass as electronics to solve existing PERC laminated cell
The technical problem of the water stability difference of defeated layer, the various complexity of step of preparation process, and battery, the present invention provide a kind of based on graphite
The solar energy laminated cell and preparation method of alkynes electron transfer layer.
The present invention specifically uses following technical scheme to achieve the goals above:
A kind of solar energy laminated cell based on graphite alkene electron transfer layer, including sequentially connected silicon nitride from bottom to top
Antireflective coating, the first aluminum oxide passivation film, phosphorus-diffused layer, P-type crystal silicon, the second aluminum oxide passivation film, silicon nitride passivation protection
Film, TCO composite layer, electron transfer layer, calcium titanium ore bed, hole transmission layer, Hole-injecting Buffer Layer for Improvement and TCO antireflection layer, electron-transport
The material of layer is graphite alkene or graphite alkene-TiO2 compound or graphite alkene-PCBM compound.
Further, TCO composite layer and TCO antireflection layer be ito thin film, IWO film, FTO film, in AZO film
It is any.
Further, the general molecular formula of calcium titanium ore bed material is ABX3, and A is organic cation, and B is metal cation, and X is
Halogen family anion, any one of organic cation CH3NH3+, NH2CH=NH2+, CH3CH2NH3+, metal cation are
Pb2+, halogen family anion are any one of I-, Cl-, Br-.
Further, for poly- 3, base thiophene, small molecule hole transport material, inorganic hole have passed the material of hole transmission layer
Any one of defeated material.
Further, the material of Hole-injecting Buffer Layer for Improvement is any one of MoOx, ZnO, TiO2.
A kind of preparation method of the solar energy laminated cell based on graphite alkene electron transfer layer, comprising the following steps:
S1:P type crystalline silicon is after making herbs into wool, diffusion, etching, annealing, and P-type crystal silicon one side forms phosphorus-diffused layer, then
In its two-sided plating 3nm-20nm aluminum oxide passivation film, the first aluminum oxide passivation film and the second aluminum oxide passivation film are respectively obtained, the
One aluminum oxide passivation film is plated in phosphorus-diffused layer;
S2: and then the silicon nitride anti-reflecting film of 80nm-150nm is plated in the first aluminum oxide passivation film, and in the second oxidation
The silicon nitride passivation protective film of 80nm-150nm is plated on aluminum passivation film;
S3: making laser grooving at silicon nitride passivation protective film again and form the bottom PERC battery, with RPD equipment in the bottom PERC electricity
One layer of TCO composite layer of pond backside deposition;
S4: and then the graphite alkene of partial size 80-140nm is dissolved into organic solvent, slurry for rotary coating is answered to TCO after stirring
It closes and is used as electron transfer layer on layer, or PCBM or TiO2, graphite is added after graphite alkene is dissolved into organic solvent and is stirred
It is that account for gravity be 3%-10% by 3%-10%, PCBM or TiO2 that alkynes, which accounts for gravity, is spun to mixed slurry after stirring
Electron transfer layer is used as on TCO composite layer:
S5: again on the electron transport layer by the ABX3 type perovskite material spin coating prepared, as calcium titanium ore bed;
S6: by poly- 3, base thiophene or small molecule hole transport material or inorganic hole transporter have been spun to perovskite again
On layer, as hole transmission layer;
S7: preparing one layer of MoOx film or ZnO film or the plating of TiO2 film on the hole transport layer with sputtering method again, as
Hole-injecting Buffer Layer for Improvement:
S8: one layer of ito thin film or IWO film or FTO film or AZO film are deposited in Hole-injecting Buffer Layer for Improvement external application RPD equipment
As TCO antireflection layer, electrode finally is prepared at the both ends of battery, forms laminated cell.
Beneficial effects of the present invention are as follows:
1, new material graphite alkene is the full carbon that phenyl ring conjugation connection is formed to two-dimensional surface network structure by 1,3-, bis- acetylene bond
Molecule has carbon chemical bond abundant, big conjugated system, wide interplanar distance, excellent chemical stability and semiconducting behavior.Reason
Show by calculated result: the lowest unoccupied molecular orbital LUMO band of graphene is wider than its highest occupied molecular orbital HOMO's
Bandwidth, and the energy difference between HOMO and LUMO is known as " band gap ", shows that it should be n-type material, is in contrast to band-gap energy
Zero graphene, graphite alkene have natural band-gap energy, and this directly existing band-gap energy enables graphite alkene directly actually to answer
It can using graphite alkene or graphite alkene-TiO2 compound or graphite alkene-PCBM compound as electron transfer layer for photoelectric device
To improve the energy conversion efficiency of perovskite laminated cell, the water stability of battery is improved, simplifies battery preparation technique step, property
Valence has very big market with prospect than high.Wherein transfer of the graphite alkene-TiO2 composite advantageous in electronics between interface, and
The recombination rate for lowering electron-hole is had found by the analysis to electronic structure, is drawn in the band gap of graphite alkene-TiO2 compound
A plurality of impurity energy level is entered, the transition of electronics provides assistance platform effect, while graphite alkene-when impurity energy level can excite for light
The valence band location of TiO2 compound is lower than graphene-TiO2 compound, illustrates that its oxidability is stronger, is conducive to its photocatalysis
The raising of performance.
Detailed description of the invention
Fig. 1 is that a kind of structure of solar energy laminated cell and preparation method based on graphite alkene electron transfer layer of the present invention is shown
It is intended to.
Appended drawing reference: 1- silicon nitride anti-reflecting film, the first aluminum oxide passivation film of 2-, 3- phosphorus-diffused layer, 4-P type crystalline silicon,
The second aluminum oxide passivation film of 5-, 6- silicon nitride passivation protective film, 7-TCO composite layer, 8- electron transfer layer, 9- calcium titanium ore bed, 10-
Hole transmission layer, 11- Hole-injecting Buffer Layer for Improvement, 12-TCO antireflection layer.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that described herein, specific examples are only used to explain the present invention, not
For limiting the present invention, i.e., described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is logical
The component for the embodiment of the present invention being often described and illustrated herein in the accompanying drawings can be arranged and be designed with a variety of different configurations.
Therefore, the detailed description of the embodiment of the present invention provided in the accompanying drawings is not intended to limit below claimed
The scope of the present invention, but be merely representative of selected embodiment of the invention.Based on the embodiment of the present invention, those skilled in the art
Member's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
It should be noted that the relational terms of term " first " and " second " or the like be used merely to an entity or
Operation is distinguished with another entity or operation, and without necessarily requiring or implying between these entities or operation, there are any
This actual relationship or sequence.Moreover, the terms "include", "comprise" or its any other variant be intended to it is non-exclusive
Property include so that include a series of elements process, method, article or equipment not only include those elements, but also
Further include other elements that are not explicitly listed, or further include for this process, method, article or equipment it is intrinsic
Element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that including described
There is also other identical elements in the process, method, article or equipment of element.
Feature and performance of the invention are described in further detail with reference to embodiments.
Embodiment 1
As shown in Figure 1, the present embodiment provides a kind of based on the solar energy laminated cell of graphite alkene electron transfer layer and preparation
Method, a kind of solar energy laminated cell based on graphite alkene electron transfer layer 8, including sequentially connected silicon nitride subtracts from bottom to top
Reflectance coating 1, the first aluminum oxide passivation film 2, phosphorus-diffused layer 3, P-type crystal silicon 4, the second aluminum oxide passivation film 5, silicon nitride passivation are protected
Cuticula 6, TCO composite layer 7, electron transfer layer 8, calcium titanium ore bed 9, hole transmission layer 10, Hole-injecting Buffer Layer for Improvement 11 and TCO antireflection layer
12, the material of electron transfer layer 8 is graphite alkene or graphite alkene-TiO2 compound or graphite alkene-PCBM compound.
New material graphite alkene is the full carbon point that phenyl ring conjugation connection is formed to two-dimensional surface network structure by 1,3-, bis- acetylene bond
Son has carbon chemical bond abundant, big conjugated system, wide interplanar distance, excellent chemical stability and semiconducting behavior.It is theoretical
Calculated result shows: the lowest unoccupied molecular orbital LUMO band of graphene is wider than the band of its highest occupied molecular orbital HOMO
Width, and the energy difference between HOMO and LUMO is known as " band gap ", shows that it should be n-type material, is zero in contrast to band-gap energy
Graphene, graphite alkene has natural band-gap energy, and this directly existing band-gap energy enables the direct practical application of graphite alkene
It, can be with using graphite alkene or graphite alkene-TiO2 compound or graphite alkene-PCBM compound as electron transfer layer in photoelectric device
The energy conversion efficiency for improving perovskite laminated cell improves the water stability of battery, simplifies battery preparation technique step, sexual valence
Than high, there is very big market with prospect.
When electron transport layer materials are graphite alkene, 1-3 layers of graphite alkene can be set, when electron transport layer materials are graphite
When alkynes-TiO2 compound, transfer of the graphite alkene-TiO2 composite advantageous in electronics between interface, and lower answering for electron-hole
Conjunction rate is had found by the analysis to electronic structure, and a plurality of impurity energy level is introduced in the band gap of graphite alkene-TiO2 compound,
The transition of electronics provides assistance platform effect, while the valence band of graphite alkene-TiO2 compound when impurity energy level can excite for light
Position is lower than graphene-TiO2 compound, illustrates that its oxidability is stronger, is conducive to the raising of its photocatalysis performance.
Further, TCO composite layer 7 and TCO antireflection layer 12 are ito thin film, IWO film, FTO film, AZO film
Any one of, TCO composite layer here play the role of separate hole-electron pair, ito thin film, IWO film, FTO film,
AZO film all has certain conductivity, meets requirement.
Further, the general molecular formula of 9 material of calcium titanium ore bed is ABX3, and A is organic cation, and B is metal cation, X
For halogen family anion, any one of organic cation CH3NH3+, NH2CH=NH2+, CH3CH2NH3+, metal cation
For Pb2+, halogen family anion is any one of I-, Cl-, Br-.
Further, the material of hole transmission layer 10 is poly- 3 base thiophene, small molecule hole transport material, inorganic hole
Any one of transmission material.
Further, the material of Hole-injecting Buffer Layer for Improvement 11 is any one of MoOx, ZnO, TiO2.
Embodiment 2
A kind of preparation method of the solar energy laminated cell based on graphite alkene electron transfer layer, comprising the following steps:
S1:P type crystalline silicon is after making herbs into wool, diffusion, etching, annealing, and P-type crystal silicon one side forms phosphorus-diffused layer, then
In its two-sided plating 3nm-20nm aluminum oxide passivation film, the first aluminum oxide passivation film and the second aluminum oxide passivation film are respectively obtained, the
One aluminum oxide passivation film is plated in phosphorus-diffused layer;
S2: and then the silicon nitride anti-reflecting film of 80nm-150nm is plated in the first aluminum oxide passivation film, and in the second oxidation
The silicon nitride passivation protective film of 80nm-150nm is plated on aluminum passivation film;
S3: making laser grooving at silicon nitride passivation protective film again and form the bottom PERC battery, with RPD equipment in the bottom PERC electricity
One layer of TCO composite layer of pond backside deposition;
S4: and then the graphite alkene of partial size 80-140nm is dissolved into organic solvent, slurry for rotary coating is answered to TCO after stirring
It closes and is used as electron transfer layer on layer, or PCBM or TiO2, graphite is added after graphite alkene is dissolved into organic solvent and is stirred
It is that account for gravity be 3%-10% by 3%-10%, PCBM or TiO2 that alkynes, which accounts for gravity, is spun to mixed slurry after stirring
Electron transfer layer is used as on TCO composite layer:
S5: again on the electron transport layer by the ABX3 type perovskite material spin coating prepared, as calcium titanium ore bed;
S6: by poly- 3, base thiophene or small molecule hole transport material or inorganic hole transporter have been spun to perovskite again
On layer, as hole transmission layer;
S7: preparing one layer of MoOx film or ZnO film or the plating of TiO2 film on the hole transport layer with sputtering method again, as
Hole-injecting Buffer Layer for Improvement:
S8: one layer of ito thin film or IWO film or FTO film or AZO film are deposited in Hole-injecting Buffer Layer for Improvement external application RPD equipment
As TCO antireflection layer, electrode finally is prepared at the both ends of battery, forms laminated cell.
Wherein the preparation of electron transfer layer is key in step s 4, when electron transfer layer only coats graphite alkene organic solvent
When, 1-3 layers can be coated, when PCBM or TiO2 being added after graphite alkene is dissolved into organic solvent and is stirred, needs rationally to control
Each composition proportion is made, test proves that, it is that 3%-10%, PCBM or TiO2 account for gravity and be that graphite alkene, which accounts for gravity,
The material property of 3%-10%, graphite alkene-TiO2 compound or graphite alkene-PCBM compound obtained are more excellent.Prepare work
Skill relatively simplifies, and operation difficulty is low.
The above, only presently preferred embodiments of the present invention, are not intended to limit the invention, patent protection model of the invention
It encloses and is subject to claims, it is all to change with equivalent structure made by specification and accompanying drawing content of the invention, similarly
It should be included within the scope of the present invention.
Claims (6)
1. a kind of solar energy laminated cell based on graphite alkene electron transfer layer, which is characterized in that including successively connecting from bottom to top
The silicon nitride anti-reflecting film (1) that connects, the first aluminum oxide passivation film (2), phosphorus-diffused layer (3), P-type crystal silicon (4), the second aluminium oxide
Passivating film (5), silicon nitride passivation protective film (6), TCO composite layer (7), electron transfer layer (8), calcium titanium ore bed (9), hole transport
Layer (10), Hole-injecting Buffer Layer for Improvement (11) and TCO antireflection layer (12), the material of electron transfer layer (8) are graphite alkene or graphite alkene-
TiO2 compound or graphite alkene-PCBM compound.
2. a kind of solar energy laminated cell based on graphite alkene electron transfer layer according to claim 1, which is characterized in that
TCO composite layer (7) and TCO antireflection layer (12) are any one of ito thin film, IWO film, FTO film, AZO film.
3. a kind of solar energy laminated cell based on graphite alkene electron transfer layer according to claim 2, which is characterized in that
The general molecular formula of calcium titanium ore bed (9) material is ABX3, and A is organic cation, and B is metal cation, and X is halogen family anion, is had
Machine cation is any one of CH3NH3+, NH2CH=NH2+, CH3CH2NH3+, metal cation Pb2+, halogen family yin from
Son is I-、CI-、Br-Any one of.
4. a kind of solar energy laminated cell based on graphite alkene electron transfer layer according to claim 3, which is characterized in that
The material of hole transmission layer (10) is poly- 3 hexyl thiophene, small molecule hole transport material, appointing in inorganic hole transporter
It is a kind of.
5. a kind of solar energy laminated cell based on graphite alkene electron transfer layer according to claim 4, which is characterized in that
The material of Hole-injecting Buffer Layer for Improvement (11) is any one of MoOx, ZnO, TiO2.
6. a kind of preparation method of solar energy laminated cell based on graphite alkene electron transfer layer according to claim 5,
Characterized by comprising the following steps:
S1:P type crystalline silicon is after making herbs into wool, diffusion, etching, annealing, and P-type crystal silicon one side forms phosphorus-diffused layer, then at it
Two-sided plating 3nm-20nm aluminum oxide passivation film respectively obtains the first aluminum oxide passivation film and the second aluminum oxide passivation film, the first oxygen
Change aluminum passivation film to be plated in phosphorus-diffused layer;
S2: and then the silicon nitride anti-reflecting film of 80nm-150nm is plated in the first aluminum oxide passivation film, and blunt in the second aluminium oxide
Change the silicon nitride passivation protective film that 80nm-150nm is plated on film;
S3: making laser grooving at silicon nitride passivation protective film again and form the bottom PERC battery, is carried on the back with RPD equipment in the bottom PERC battery
Face deposits one layer of TCO composite layer;
S4: and then the graphite alkene of partial size 80-140nm is dissolved into organic solvent, by slurry for rotary coating to TCO composite layer after stirring
It is upper to be used as electron transfer layer, or PCBM or TiO2 is added after graphite alkene is dissolved into organic solvent and is stirred, graphite alkene accounts for
Gravity is that 3%-10%, PCBM or TiO2 account for gravity as 3%-10%, and mixed slurry is spun to TCO after stirring and is answered
It closes and is used as electron transfer layer on layer:
S5: again on the electron transport layer by the ABX3 type perovskite material spin coating prepared, as calcium titanium ore bed;
S6: poly- 3 hexyl thiophene or small molecule hole transport material or inorganic hole transporter are spun to calcium titanium ore bed again
On, as hole transmission layer;
S7: one layer of MoOx film or ZnO film or the plating of TiO2 film are prepared on the hole transport layer with sputtering method again, as hole
Buffer layer:
S8: one layer of ito thin film or IWO film or FTO film or AZO film conduct are deposited in Hole-injecting Buffer Layer for Improvement external application RPD equipment
TCO antireflection layer finally prepares electrode at the both ends of battery, forms laminated cell.
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