CN216773253U

CN216773253U - Laminated solar cell

Info

Publication number: CN216773253U
Application number: CN202220269926.0U
Authority: CN
Inventors: 丁晓兵; 夏锐; 陈艺绮; 柳伟; 张学玲; 陈达明; 陈奕峰
Original assignee: Trina Solar Co Ltd
Current assignee: Trina Solar Co Ltd
Priority date: 2022-02-10
Filing date: 2022-02-10
Publication date: 2022-06-17
Anticipated expiration: 2032-02-10

Abstract

The utility model provides a tandem solar cell. The tandem solar cell comprises a p-type silicon layer, a connecting layer, a perovskite layer and an electrode layer, wherein the connecting layer comprises a first connecting layer, a second connecting layer and a third connecting layer, and the electrode comprises a first electrode layer and a second electrode layer; the front surface of the p-type silicon layer is provided with a first connecting layer, a perovskite layer, a second connecting layer and a first electrode layer which are sequentially connected, and the back surface of the p-type silicon layer is provided with a third connecting layer and a second electrode layer which are sequentially connected. The laminated cell is used, the efficiency is obviously improved compared with a single junction cell, and the p-type silicon layer is selected to form the laminated cell, so that the production cost can be effectively reduced.

Description

Laminated solar cell

Technical Field

The utility model relates to the field of photovoltaics, and relates to a laminated solar cell.

Background

Photovoltaic power generation is one of the most promising ways to provide sustainable, clean and low-cost energy to the world. The method is an effective means for reducing the total cost of the photovoltaic power generation installation by improving the power conversion efficiency of the module per unit area. Perovskite materials have received significant attention from photovoltaic research in recent years due to their excellent photovoltaic properties and low manufacturing costs. Recently, the perovskite/silicon tandem lamination has been rapidly developed into a new technology, the reported photoelectric conversion efficiency also exceeds the limit efficiency of a crystalline silicon battery, and the theoretical efficiency can reach 44%, so that the perovskite/silicon tandem lamination is hopeful to become a new photovoltaic battery technology of the next generation.

Based on a perovskite/crystalline silicon laminated cell, the working principle is that different solar spectrums are absorbed by utilizing different band gaps, the conversion efficiency of the cell is improved, the wide band gap perovskite absorbs short-wavelength light, and the light with longer wavelength is transmitted into the wide band gap perovskite to be absorbed by the silicon solar cell with a narrow band gap. At present, the bottom cell of the tandem cell mainly adopts a heterojunction formed by taking N-type silicon as a substrate, and the reported perovskite/heterojunction tandem cell efficiency reaches 29.8%. The existing P-type solar cell in the photovoltaic industry has high capacity and low cost, and the perovskite and P-type laminated layers have obvious advantages on the basis.

In the prior art solutions, most of the studies of tandem cells are based on n-type heterojunction cells, in which the thermal stability of the hydrogenated amorphous silicon intermediate layer directly limits the top perovskite, which only accounts for a small part of the solar market, and p-type c-Si solar cells have already taken up more than 90% of the global market share over the last decades.

CN 110867516A discloses a novel solar cell based on perovskite and crystalline silicon back passivation lamination and a manufacturing method thereof, the solar cell comprises a bottom layer cell and a top layer cell, an upper electrode is fixedly connected on the top layer cell, an intermediate layer is arranged between the bottom layer cell and the top layer cell, the bottom layer cell is a crystalline silicon back passivation cell, wherein the crystalline silicon back passivation cell comprises an N-type polycrystalline silicon film, a tunneling silicon oxide film, a P-type silicon substrate, a back passivation layer and a metal lower electrode which are sequentially connected, the N-type silicon and the perovskite lamination have higher cost, and the solar cell is not suitable for low-cost large-scale production.

CN 113206123A discloses a perovskite/crystalline silicon laminated cell and a preparation method thereof, the laminated cell comprises a perovskite top cell and a tunneling oxide layer passivation contact silicon bottom cell, and a tunneling junction of the laminated cell is directly formed by n-type doped polycrystalline silicon of a TOPCon cell and a hole transport layer of the perovskite cell. CN 113437159A discloses a N-type TOPCon battery with quantum well structure and its manufacturing method, which superposes P on N-type silicon substrate⁺The doped layer, but the front surface of the cell with the N-type TOPCon as the bottom is a P-type doped region, the surface defects of the cell are more, and the efficiency loss will be caused by the perovskite connected in series on the front surface.

How to prepare a low-cost large-scale high-efficiency solar cell is an important research direction in the field.

SUMMERY OF THE UTILITY MODEL

The utility model aims to provide a low-cost large-scale high-efficiency laminated solar cell.

In order to achieve the purpose of the utility model, the utility model adopts the following technical scheme:

one of the objects of the present invention is to provide a tandem solar cell, which includes a p-type silicon layer, a connection layer including a first connection layer, a second connection layer, and a third connection layer, a perovskite layer, and an electrode layer including a first electrode layer and a second electrode layer.

The front surface of the p-type silicon layer is provided with a first connecting layer, a perovskite layer, a second connecting layer and a first electrode layer which are sequentially connected, and the back surface of the p-type silicon layer is provided with a third connecting layer and a second electrode layer which are sequentially connected.

The laminated cell is used, the efficiency is obviously improved compared with a single junction cell, and the p-type silicon material is selected to form the laminated cell, so that the production cost can be effectively reduced.

As a preferable technical scheme of the utility model, the p-type silicon layer comprises p-type monocrystalline silicon and/or p-type polycrystalline silicon.

Preferably, the p-type silicon layer has a resistivity of 0.0001 to 1000 ohm-cm, wherein the resistivity may be 0.0001, 0.001, 0.005, 0.01, 0.05, 0.1, 0.5, 1, 10, 100, 200, 300, 400, 500, 600, 700, 800, 900, or 1000 ohm-cm, but is not limited to the recited values, and other values not recited in the range of values are also applicable.

Preferably, the thickness of the p-type silicon layer is 1 to 500 μm, wherein the thickness may be 1 μm, 10 μm, 50 μm, 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, 450 μm or 500 μm, but is not limited to the recited values, and other values not recited in the numerical range are also applicable.

As a preferred technical scheme of the utility model, the perovskite layer is made of ABX₃Wherein A comprises any one of FA, MA, Cs or Rb, or a combination of at least two of them, typical but non-limiting examples being: combinations of FA and MA, MA and Cs, Cs and Rb or MA and Rb, etc., B comprising any one or combination of at least two of Pb, Sn or Sr, wherein typical but non-limiting examples are: combinations of Pb and Sn, Sn and Sr, or Pb and Sr, and the like, X includes any one of Br, I, or CI, or a combination of at least two thereof, wherein typical but non-limiting examples thereof are: combinations of Br and I, I and CI, or Br and CI, and the like.

Preferably, the structure of the material of the perovskite layer is a three-dimensional crystal structure.

Preferably, the perovskite layer has a thickness of 10 to 3000nm, wherein the thickness may be 10nm, 100nm, 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm, 1000nm, 1100nm, 1200nm, 1300nm, 1400nm, 1500nm, 1600nm, 1700nm, 1800nm, 1900nm, 2000nm, 2100nm, 2200nm, 2300nm, 2400nm, 2500nm, 2600nm, 2700nm, 2800nm, 2900nm, 3000nm, or the like, but is not limited to the recited values, and other values not recited within the range of values are equally applicable.

As a preferable embodiment of the present invention, the first connection layer, the second connection layer, and the third connection layer each independently include an n-type layer and/or a p-type layer.

Preferably, the p-type layer comprises a hole transport layer or a p-type polysilicon layer.

Preferably, the number of the p-type layers is ≧ 1, wherein the number can be 1, 2, 3, 4, 5, or 6, and the like, but is not limited to the recited values, and other values not recited within the range of values are equally applicable.

Preferably, the n-type layer includes an electron transport layer or an n-type polysilicon layer.

Preferably, the number of n-type layers is ≧ 1, where the number can be 1, 2, 3, 4, 5, or 6, and the like, but is not limited to the recited values, and other unrecited values within the range of values are equally applicable.

As a preferable technical scheme of the utility model, the material of the electron transport layer comprises SnO₂、TiO₂、ZnO、BaSnO₃、C₆₀Any one or a combination of at least two of graphene or fullerene derivatives, wherein typical but non-limiting examples of such combinations are: SnO₂And TiO₂Combination of (2) and TiO₂And ZnO, ZnO and BaSnO₃Combination of (A) and (B) BaSnO₃And C₆₀Combination of (1), C₆₀And a combination of graphene or a combination of graphene and a fullerene derivative, and the like.

Preferably, the thickness of the electron transport layer is 1 to 1000nm, wherein the thickness may be 50nm, 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, 550nm, 600nm, 650nm, 700nm, 750nm, 800nm, 850nm, 900nm, 950nm, or 1000nm, but is not limited to the recited values, and other values not recited in the range of the values are also applicable.

Preferably, the material of the hole transport layer includes P₃HT, Spiro-meoTAD, PEDOT PSS, nickel oxide, PTAA, MoO₃、CuSCN、Cu₂O, CuI or Spiro-TTB, or a combination of at least two of the following, typical but non-limiting examples being: p₃A combination of HT and Spiro-meoTAD, a combination of Spiro-meoTAD and PEDOT: PSS, a combination of PEDOT: PSS and nickel oxide, a combination of nickel oxide and PTAA, PTAA and MoO₃Combination of (1), MoO₃And CuSCN, CuSCN and Cu₂Combination of O and Cu₂A combination of O and CuI or a combination of CuI and Spiro-TTB, and the like.

Preferably, the thickness of the hole transport layer is 1 to 1000nm, wherein the thickness may be 50nm, 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, 550nm, 600nm, 650nm, 700nm, 750nm, 800nm, 850nm, 900nm, 950nm, or 1000nm, but is not limited to the recited values, and other values not recited within the range of the values are also applicable.

Preferably, the thickness of the n-type polysilicon layer is 1 to 200nm, wherein the thickness may be 20nm, 40nm, 60nm, 80nm, 100nm, 120nm, 140nm, 160nm, 180nm or 200nm, but is not limited to the recited values, and other values not recited in the range of the values are also applicable.

Preferably, the p-type polysilicon layer has a thickness of 1 to 200nm, wherein the thickness may be 20nm, 40nm, 60nm, 80nm, 100nm, 120nm, 140nm, 160nm, 180nm or 200nm, but is not limited to the recited values, and other values not recited in the range of the recited values are also applicable.

The n-type polycrystalline silicon is formed by high-temperature activation of phosphorus-doped amorphous silicon, and the P-type polycrystalline silicon is formed by high-temperature activation of boron-doped amorphous silicon.

As a preferred embodiment of the present invention, the first connection layer, the second connection layer, and the third connection layer further independently include any one or a combination of at least two of a transparent conductive electrode layer, a buffer layer, a tunneling layer, a passivation layer, or an anti-reflection layer, where the combination is typically but not limited to: a combination of a transparent conductive electrode layer and a buffer layer, a combination of a buffer layer and a tunneling layer, a combination of a tunneling layer and a passivation layer, or a combination of a passivation layer and an anti-reflection layer, etc.

As a preferred embodiment of the present invention, the material of the transparent conductive electrode layer includes any one of ITO, IZO, AZO, BZO, or silver nanowires, or a combination of at least two of them, wherein typical but non-limiting examples of the combination are: combinations of ITO and IZO, IZO and AZO, AZO and BZO, BZO and silver nanowires, and the like, but are not limited to the recited values, and other values not recited in the range of values are also applicable.

Preferably, the thickness of the transparent conductive electrode layer is 1 to 1000nm, wherein the thickness may be 50nm, 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, 550nm, 600nm, 650nm, 700nm, 750nm, 800nm, 850nm, 900nm, 950nm, or 1000nm, but is not limited to the recited values, and other values not recited in the range of the values are also applicable.

Preferably, the material of the buffer layer comprises SnO₂And/or MoO₃。

Preferably, the thickness of the buffer layer is 1 to 1000nm, wherein the thickness may be 50nm, 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, 550nm, 600nm, 650nm, 700nm, 750nm, 800nm, 850nm, 900nm, 950nm, or 1000nm, but is not limited to the recited values, and other values not recited in the range of the values are also applicable.

Preferably, the material of the tunneling layer comprises SiO₂nc-Si H or nc-SiO₂Any one or a combination of at least two of the following, typical but non-limiting examples of which are: SiO 2₂And nc-Si: H, nc-Si: H and nc-SiO₂Combinations of (A) or SiO₂And nc-SiO₂Combinations of (a), (b), and the like.

Preferably, the tunneling layer has a thickness of 1 to 100nm, wherein the thickness may be 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, or 100nm, but is not limited to the recited values, and other values not recited in the range of the recited values are also applicable.

The tunneling layer in the utility model is composed of at least one layer of single substance or mixture, and has the functions of collecting and transmitting carriers.

As the preferable technical scheme of the utility model, the material of the passivation layer comprises PEAI, FPEAI, EDTA, PMMA, Al₂O₃Any one or a combination of at least two of silicon nitride or silicon oxynitride, wherein typical but non-limiting examples of such combinations are: a combination of PEAI and FPEAI, a combination of FPEAI and EDTA, a combination of EDTA and PMMA, PMMA and Al₂O₃Combination of (1) and Al₂O₃And silicon nitride, or a combination of silicon nitride and silicon oxynitride, and the like.

The passivation layer of the utility model is made of materials including-COOH, -OH and-NH respectively₂Any one or a combination of at least two of terminal functional groups such as, -SH, -CN, -SCN, etc. Typical but non-limiting examples of such combinations are: -COOH and-OH combinations, -OH and-NH₂Combination of-NH₂And a combination of-SH, -SH and-CN, or-CN and-SCN, and the like.

Preferably, the material of the anti-reflection layer comprises LiF and/or MgF₂。

Preferably, the thickness of the anti-reflective layer is 1 to 500nm, wherein the thickness may be 50nm, 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm or 500nm, but is not limited to the enumerated values, and other values not enumerated within the range of the enumerated values are also applicable.

As a preferred embodiment of the present invention, the material of the electrode layer includes any one or a combination of at least two of silver, aluminum, gold, copper, titanium, chromium, nickel, or palladium, wherein the combination is exemplified by, typically but not limited to: silver and aluminum in combination, aluminum and gold in combination, gold and copper in combination, copper and titanium in combination, titanium and chromium in combination, chromium and nickel in combination, or nickel and palladium in combination, and the like.

Preferably, the thickness of the electrode layer is 1 to 1000nm, wherein the thickness may be 50nm, 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, 550nm, 600nm, 650nm, 700nm, 750nm, 800nm, 850nm, 900nm, 950nm, or 1000nm, but is not limited to the recited values, and other values not recited in the range of the values are also applicable.

The solar cell prepared by the method is prepared by laminating by conventional technical means such as an LPCVD (low pressure chemical vapor deposition) method, a spin coating method, thermal evaporation, magnetron sputtering and the like, and all the conventional means are adopted, so that the method is not limited too much.

A second object of the utility model is to provide a use of a tandem solar cell according to the first object for applications in the field of photovoltaics.

The materials used in the present invention are all known materials.

Compared with the prior art, the utility model has the following beneficial effects:

(1) the solar cell prepared by the utility model is compatible with the production process of the existing P-type solar cell.

(2) The utility model has the advantages of low production equipment investment and simple production process.

(3) Compared with an N-type silicon/perovskite lamination, the perovskite/P-type crystalline silicon lamination solar cell prepared by the utility model has lower production cost.

(4) The solar cell prepared by the utility model can solve the bottleneck problem of P-type silicon efficiency.

Drawings

Fig. 1 is a block diagram of a tandem solar cell provided in an embodiment of the present invention.

In the figure: a 1-p type silicon layer; 2-a perovskite layer; 3-a first tie layer; 4-a second tie layer; 5-a third tie layer; 6-a first electrode layer; 7-a second electrode layer.

Detailed Description

The present invention is described in further detail below. The following examples are merely illustrative of the present invention and do not represent or limit the scope of the claims, which are defined by the claims.

The utility model provides a tandem solar cell (as shown in fig. 1), which comprises a p-type silicon layer 1, a connecting layer, a perovskite layer 2 and electrode layers, wherein the connecting layer comprises a first connecting layer 3, a second connecting layer 4 and a third connecting layer 5, and the electrodes comprise a first electrode layer 6 and a second electrode layer 7.

The front surface of the p-type silicon layer 1 is provided with a first connecting layer 3, a perovskite layer 2, a second connecting layer 4 and a first electrode layer 6 which are sequentially connected, and the back surface of the p-type silicon layer 1 is provided with a third connecting layer 5 and a second electrode layer 7 which are sequentially connected.

The laminated cell is used, the efficiency is obviously improved compared with a single junction cell, the p-type silicon material is cheaper than an n-type silicon material by selecting the p-type silicon layer 1, and the production cost can be effectively reduced by using the p-type silicon material to form the laminated cell.

Further, the p-type silicon layer 1 includes p-type single crystal silicon.

Further, the resistivity of the p-type silicon layer 1 is 0.001 to 1000ohm cm.

Further, the thickness of the p-type silicon layer 1 is 10-500 μm.

Further, the structure of the material of the perovskite layer 2 is a three-dimensional crystal structure.

Further, the thickness of the perovskite layer 2 is 10-1000 nm.

Further, the first connection layer 3, the second connection layer 4 and the third connection layer 5 each independently include an n-type layer and/or a p-type layer.

Further, the p-type layer includes a hole transport layer or a p-type polysilicon layer.

Further, the number of the p-type layers is more than or equal to 1.

Further, the n-type layer includes an electron transport layer or an n-type polysilicon layer.

Further, the number of the n-type layers is more than or equal to 1.

Furthermore, the thickness of the electron transmission layer is 1-1000 nm.

Further, the thickness of the hole transport layer is 1-1000 nm.

Further, the thickness of the n-type polycrystalline silicon layer is 1-200 nm.

Further, the thickness of the p-type polycrystalline silicon layer is 1-200 nm.

Further, the first connection layer 3, the second connection layer 4, and the third connection layer 5 respectively and independently include any one of a transparent conductive electrode layer, a buffer layer, a tunneling layer, a passivation layer, or an antireflection layer, or a combination of at least two of them.

Further, the thickness of the transparent conductive electrode layer is 1-1000 nm.

Furthermore, the thickness of the buffer layer is 1-1000 nm.

Furthermore, the thickness of the tunneling layer is 1-100 nm.

Further, the material of the anti-reflection layer comprises LiF and/or MgF₂。

Further, the thickness of the antireflection layer is 1-500 nm.

Further, the thickness of the electrode layer is 1-1000 nm.

To better illustrate the utility model and to facilitate the understanding of the technical solutions thereof, typical but non-limiting examples of the utility model are as follows:

example 1

The present embodiment provides a tandem solar cell:

(1) the P-type monocrystalline silicon with the thickness of 180 mu m is used as a substrate, and conventional texturing and hydrofluoric acid and RCA (rolling circle amplification) marking cleaning are carried out.

(2) And carrying out phosphorus diffusion on the front surface of the monocrystalline silicon substrate by adopting diffusion furnace equipment to form an n-type emitter.

(3) Preparing a layer of ultrathin tunneling silicon dioxide with the thickness of 1nm and boron-doped amorphous silicon on the back surface of a monocrystalline silicon substrate by LPCVD (low pressure chemical vapor deposition), and activating at high temperature to form p-type polycrystalline silicon.

(4) And depositing a silicon nitride layer with the thickness of 75nm on the p-type polycrystalline silicon by adopting PECVD equipment.

(5) And forming an Ag electrode on the back surface by adopting screen printing.

(6) And depositing a layer of ITO with the thickness of 15nm on the N-type emitter by magnetron sputtering.

(7) A 40nm hole transport layer PTAA was deposited on the ITO by spin coating.

(8) Depositing perovskite light absorption layer Cs on electron transport layer by one-step spin coating method_0.25FA_0.75Pb(I_0.8Br_0.2)₃The band gap was about 1.68eV, and the thickness was 750 nm.

(9) A 5nm buffer layer C60 was deposited on the perovskite layer by spin coating.

(10) Depositing a 20nm electron transport layer SnO on the buffer layer by adopting ALD equipment₂。

(11) And depositing a layer of transparent conducting layer ITO with the thickness of 100nm on the electron transmission layer by adopting magnetron sputtering equipment.

(12) Finally, a layer of Ag electrode with the thickness of 100nm is deposited on the top by adopting thermal evaporation equipment.

Example 2

The present embodiment provides a tandem solar cell:

(2) And carrying out phosphorus diffusion on the front surface of the silicon substrate on the single crystal by adopting diffusion furnace equipment to form an n-type emitter.

(3) And preparing a layer of ultrathin tunneling silicon dioxide with the thickness of 2nm on the two sides of the monocrystalline silicon by APCVD.

(4) Depositing a boron-doped polycrystalline silicon layer on the ultrathin tunneling silicon oxide on the front surface of the silicon substrate by adopting LPCVD equipment to obtain n-type polycrystalline silicon with the thickness of 50 nm; and depositing a phosphorus-doped polycrystalline silicon layer on the ultrathin tunneling silicon oxide on the back surface of the silicon substrate by using the single crystal to obtain p-type polycrystalline silicon with the thickness of 150 nm.

(5) And depositing a silicon nitride layer with the thickness of 50nm on the p-type doped polycrystalline silicon layer by adopting PECVD equipment.

(6) And forming an Ag electrode on the back surface by adopting screen printing.

(7) A 30nm hole transport layer PTAA was deposited on the N-type polysilicon by spin coating.

(8) Depositing a perovskite light absorption layer Cs on the electron transport layer by a one-step spin coating method_0.25FA_0.75Pb(I_0.8Br_0.2)₃The band gap was about 1.68eV, and the thickness was 500 nm.

(9) A 2.5nm buffer layer C60 was deposited on the perovskite layer by spin coating.

Example 3

The present embodiment provides a tandem solar cell:

(2) And simultaneously preparing a layer of ultrathin tunneling silicon oxide with the thickness of 2nm on the front surface and the back surface of the monocrystalline silicon substrate.

(3) Depositing a boron-doped polycrystalline silicon layer on the ultra-thin tunneling silicon oxide on the front surface of the silicon substrate by adopting LPCVD equipment; and depositing a phosphorus-doped polycrystalline silicon layer on the ultrathin tunneling silicon oxide on the back surface of the monocrystalline silicon substrate, wherein the thickness of the phosphorus-doped polycrystalline silicon layer is 100 nm.

(4) And depositing a silicon nitride layer with the thickness of 100nm on the n-type doped polycrystalline silicon layer by adopting PECVD equipment.

(5) Depositing a 50nm electron transport layer SnO on the p-type doped polycrystalline silicon layer by a spin coating method₂。

(6) Depositing a perovskite light absorption layer Cs on the electron transport layer by a one-step spin coating method_0.25FA_0.75Pb(I_0.8Br_0.2)₃The band gap was about 1.68eV, and the thickness was 500 nm.

(7) A hole transport layer, Spiro-meoTAD, was deposited on the perovskite layer by spin coating to a thickness of 200 nm.

(8) Depositing a buffer layer MoO with the thickness of 18nm on the hole transport layer by adopting thermal evaporation equipment₃。

(9) And depositing a layer of transparent conductive layer ITO with the thickness of 100nm on the buffer layer by adopting magnetron sputtering equipment.

(10) And finally, depositing a layer of Ag electrode with the thickness of 100nm on both sides of the laminated battery by adopting thermal evaporation equipment.

The applicant declares that the present invention illustrates the detailed structural features of the present invention through the above embodiments, but the present invention is not limited to the above detailed structural features, that is, it does not mean that the present invention must be implemented depending on the above detailed structural features. It should be understood by those skilled in the art that any modifications of the present invention, equivalent substitutions of selected components of the present invention, additions of auxiliary components, selection of specific modes, etc., are within the scope and disclosure of the present invention.

Claims

1. A tandem solar cell, comprising a p-type silicon layer, a connection layer, a perovskite layer and an electrode layer, wherein the connection layer comprises a first connection layer, a second connection layer and a third connection layer, and wherein the electrode comprises a first electrode layer and a second electrode layer;

2. The tandem solar cell according to claim 1, wherein the p-type silicon layer comprises p-type single crystal silicon and/or p-type polycrystalline silicon;

the resistivity of the p-type silicon layer is 0.0001-1000 ohm cm;

the thickness of the p-type silicon layer is 1-500 mu m.

3. The tandem solar cell according to claim 1, wherein the structure of the material of the perovskite layer is a three-dimensional crystal structure;

the thickness of the perovskite layer is 10-3000 nm.

4. The tandem solar cell according to claim 1, wherein the first, second and third connection layers each independently comprise an n-type layer and/or a p-type layer.

5. The tandem solar cell of claim 4, wherein the p-type layer comprises a hole transport layer or a p-type polysilicon layer;

the number of the p-type layers is more than or equal to 1;

the n-type layer comprises an electron transport layer or an n-type polycrystalline silicon layer;

the number of the n-type layers is more than or equal to 1.

6. The tandem solar cell according to claim 5, wherein the thickness of the electron transport layer is 1 to 1000 nm;

the thickness of the hole transport layer is 1-1000 nm;

the thickness of the n-type polycrystalline silicon layer is 1-200 nm;

the thickness of the p-type polycrystalline silicon layer is 1-200 nm.

7. The tandem solar cell of claim 4, wherein the first, second and third connection layers further independently comprise any one or a combination of at least two of a transparent conductive electrode layer, a buffer layer, a tunneling layer, a passivation layer or an anti-reflective layer.

8. The tandem solar cell according to claim 7, wherein the thickness of the transparent conductive electrode layer is 1 to 1000 nm;

the thickness of the buffer layer is 1-1000 nm;

the thickness of the tunneling layer is 1-100 nm.

9. The tandem solar cell according to claim 7, wherein the thickness of the anti-reflective layer is 1 to 500 nm.

10. The tandem solar cell according to claim 1, wherein the thickness of the electrode layer is 1-1000 nm.