CN109840365A - A kind of active memristor emulator - Google Patents
A kind of active memristor emulator Download PDFInfo
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- CN109840365A CN109840365A CN201910041957.3A CN201910041957A CN109840365A CN 109840365 A CN109840365 A CN 109840365A CN 201910041957 A CN201910041957 A CN 201910041957A CN 109840365 A CN109840365 A CN 109840365A
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Abstract
The invention discloses a kind of active memristor emulators, and in particular to memristor simulation technical field.The active memristor emulator realizes the corresponding operation in active memristor characteristic using integrated computation circuit, in the case where no reality active memristor device, practical active memristor can be replaced to realize relative circuit design, experiment and application.The active memristor emulator includes resistor network, reverse phase proportioner, inverting integrator and multiplier；Reverse phase proportioner includes the first reverse phase proportioner, the second reverse phase proportioner, third reverse phase proportioner and the 4th reverse phase proportioner, is configurable for realizing output voltage and input voltage at reverse phase scale operation relationship；Resistor network includes the 4th resistance, and one end of the 4th resistance connects power input, and the other end is connected by second resistance with the first reverse phase proportioner；Reverse phase meter integrator, which is configurable for realizing, carries out integral operation to voltage；Multiplier is configurable for realizing the multiplication of two input signals.
Description
Technical field
The present invention relates to memristor simulation technical fields, and in particular to a kind of active memristor emulator.
Background technique
Memristor is the 4th basic circuit elements after resistance, inductance and capacitor.Cai Shaotang is in proposition within 1971
The concept of memristor simultaneously predicts its existence, and Hewlett-Packard laboratory reports the realisation of memristor for the first time within 2008.
Memristor has other three kinds of basic circuit elements any combination not property of reproducible, it is that a kind of have the non-of memory function
Linear resistance, therefore memristor is widely used in the fields such as computer science, neural network and electronic engineering.Memristor conduct
4th kind of basic circuit elements apply to be easy to produce chaos phenomenon in circuit, therefore the design of memristor chaos circuit also results in
The great research interest of academia.It is most of at present since memristor in kind manufactures extensively and apply to actual circuit not yet
Memristor in kind is all to occur in integrated circuit form, few independent memristor elements.In order to preferably utilize memristor
The distinctive property of device, design memristor equivalent circuit have great importance.Therefore, design that a kind of principle is simple, is easily achieved
And the high memristor equivalent circuit of levels of precision has great importance.
Summary of the invention
The purpose of the present invention devises a kind of and equivalent artificial circuit of memristor, and the artificial circuit principle is simple, is easy to
Realize, accuracy it is high, as memristor widely studied and applied.
The present invention specifically adopts the following technical scheme that
A kind of active memristor emulator, including resistor network, reverse phase proportioner, inverting integrator and multiplier；
The reverse phase proportioner includes the first reverse phase proportioner, the second reverse phase proportioner, third reverse phase proportioner and the 4th
Reverse phase proportioner is configurable for realizing output voltage and input voltage at reverse phase scale operation relationship；
The resistor network includes the 4th resistance, and one end of the 4th resistance connects power input, and the other end passes through second
Resistance is connected with the first reverse phase proportioner；
The reverse phase meter integrator, which is configurable for realizing, carries out integral operation to voltage；
The multiplier is configurable for realizing the multiplication of two input signals.
Preferably, the first reverse phase proportioner, the second reverse phase proportioner, third reverse phase proportioner and the 4th reverse phase ratio
Device be respectively adopted the first LF347 chip part pin constitute, reverse phase meter integrator by the 2nd LF347 chip part pin structure
At multiplier is constituted using AD633JN chip.
Preferably, the first reverse phase proportioner is drawn by the first pin, second pin and the third of the first LF347N chip
Foot composition, the second reverse phase proportioner are made of the 5th pin, the 6th pin and the 7th pin of the first LF347N chip, and third is anti-
Phase Proportion device is made of the 8th pin, the 9th pin and the tenth pin of the first LF347N chip, and the 4th reverse phase proportioner is by
The 12nd pin, the 13rd pin and the 14th pin composition of one LF347N chip；
First pin of the first LF347N chip is connected by the 7th resistance with its second pin, and second pin passes through the
Two resistance and the 4th resistance connect power input, and third pin connects power input by first resistor and passes through simultaneously
3rd resistor ground connection；
5th pin of the first LF347N chip is grounded, and the 6th pin connects the first LF347N chip by the 6th resistance
The first pin, the 7th pin is connected by the 9th resistance with its 6th pin；
8th pin of the first LF347N chip is connected by the 8th resistance with its 9th pin, and its 8th pin passes through
Second resistance is connected with the second pin of the first LF347N chip, and the 9th pin passes through the 5th resistance and its first pin phase
Even, the 9th pin is connected by twelfth resistor with the 14th pin of device, the tenth pin ground connection；
12nd pin of the first LF347N chip is grounded, and the 13rd pin the 14th is drawn by eleventh resistor with it
Foot is connected, and its 14th pin is connected by thirteenth resistor with the second pin of the 2nd LF347 chip.
Preferably, the inverting integrator uses the first pin, second pin and the third pin of the 2nd LF347N chip
It constitutes, the first pin of the 2nd LF347N chip is connected by the second capacitor with its second pin, and second pin passes through the tenth
Five resistance are connected with its first pin, and its second pin passes through the 7th pin phase of the 14th resistance and the first LF347N chip
Even.
Preferably, the X1 pin of the AD633JN chip is connected with the first pin of the first LF347N chip, AD633JN
The Y1 pin of chip is connected with the first pin of the 2nd LF347N chip, X1 pin and Y1 the pin ground connection of AD633JN chip,
VS+ pin meets power supply VCC, and VS- pin meets power supply VEE, Z pin ground connection, and W pin passes through the tenth resistance and reverse phase ratio
The 13rd pin of device U1D is connected.
Preferably, the electric current for flowing through the 4th resistance is iM,R1~R15Respectively first resistor~the 15th resistance is corresponding
Resistance value, C2For the corresponding capacitance of the second capacitor, the first pin of the first LF347N chip is defeated after the first reverse phase proportioner
It is out v0It is indicated with formula (1):
The 7th pin output of first LF347N chip is-v0, two input signals of multiplier are AD633JN core respectively
The v at the end piece X10With the q at the end Y2, the output v of the w pin of AD633JN chipwIt is indicated with formula (2):
vw=qv0(2)；
The 14th pin output of first LF347N chip is v14It is indicated with formula (3)
The 8th pin output of first LF347N chip is vMIt is indicated using formula (4)
First pin output variable of the 2nd LF347N chip is defined as q to be indicated using formula (5)
Then the expression of active memristor is indicated using formula (6)
The invention has the following beneficial effects:
The active memristor emulator realizes the C-V characteristic of active memristor using analog circuit, has implemented active
The C-V characteristic of memristor realizes the corresponding operation in active memristor characteristic using integrated computation circuit, and active memristor is imitative
The analog circuit of true device contain 5 operational amplifiers and 1 multiplier, integrated operational amplifier mainly to realize reverse phase integral and
Reverse phase scale operation, product of the multiplier to realize two input signals；Structure is simple, in the active memristor device of no reality
In the case where part, practical active memristor can be replaced to realize relative circuit design, experiment and application, to active memristor
Characteristic and application study have great importance.
Detailed description of the invention
Fig. 1 is active memristor emulator structural block diagram；
Fig. 2 is active memristor circuit diagram.
Specific embodiment
A specific embodiment of the invention is described further in the following with reference to the drawings and specific embodiments:
The active memristor emulator is carried out based on the general expression of memristor C-V characteristic:
As shown in Figure 1, a kind of active memristor emulator, including resistor network, reverse phase proportioner, inverting integrator and multiply
Musical instruments used in a Buddhist or Taoist mass；
Reverse phase proportioner includes the first reverse phase proportioner, the second reverse phase proportioner, third reverse phase proportioner and the 4th reverse phase
Proportioner is configurable for realizing output voltage and input voltage at reverse phase scale operation relationship；
Resistor network includes the 4th resistance, and one end of the 4th resistance connects power input, and the other end passes through second resistance
It is connected with the first reverse phase proportioner；
Reverse phase meter integrator, which is configurable for realizing, carries out integral operation to voltage；
Multiplier is configurable for realizing the multiplication of two input signals.
First reverse phase proportioner, the second reverse phase proportioner, third reverse phase proportioner and the 4th reverse phase proportioner are respectively adopted
The part pin of first LF347 chip is constituted, and reverse phase meter integrator is made of the part pin of the 2nd LF347 chip, multiplier
It is constituted using AD633JN chip, the 4th pin and the 11st pin of the first LF347 chip and the 2nd LF347 chip are grounded.
As shown in Fig. 2, the first reverse phase proportioner is by the first pin of the first LF347N chip, second pin and third pin
Composition, the second reverse phase proportioner are made of the 5th pin, the 6th pin and the 7th pin of the first LF347N chip, third reverse phase
Proportioner is made of the 8th pin, the 9th pin and the tenth pin of the first LF347N chip, and the 4th reverse phase proportioner is by first
The 12nd pin, the 13rd pin and the 14th pin composition of LF347N chip；
First pin of the first LF347N chip is connected by the 7th resistance with its second pin, and second pin passes through the
Two resistance and the 4th resistance connect power input, and third pin connects power input by first resistor and passes through simultaneously
3rd resistor ground connection；
5th pin of the first LF347N chip is grounded, and the 6th pin connects the first LF347N chip by the 6th resistance
The first pin, the 7th pin is connected by the 9th resistance with its 6th pin；
8th pin of the first LF347N chip is connected by the 8th resistance with its 9th pin, and its 8th pin passes through
Second resistance is connected with the second pin of the first LF347N chip, and the 9th pin passes through the 5th resistance and its first pin phase
Even, the 9th pin is connected by twelfth resistor with the 14th pin of device, the tenth pin ground connection；
12nd pin of the first LF347N chip is grounded, and the 13rd pin the 14th is drawn by eleventh resistor with it
Foot is connected, and its 14th pin is connected by thirteenth resistor with the second pin of the 2nd LF347 chip.
Inverting integrator is constituted using the first pin of the 2nd LF347N chip, second pin and third pin, and second
First pin of LF347N chip is connected by the second capacitor with its second pin, and second pin passes through the 15th resistance and its
First pin is connected, and its second pin is connected by the 14th resistance with the 7th pin of the first LF347N chip.
The X1 pin of AD633JN chip is connected with the first pin of the first LF347N chip, the Y1 pin of AD633JN chip
It is connected with the first pin of the 2nd LF347N chip, X1 pin and Y1 the pin ground connection of AD633JN chip, VS+ pin connect electricity
Source VCC, VS- pin meet power supply VEE, Z pin ground connection, and W pin passes through the tenth resistance and the 13rd of reverse phase proportioner U1D the
Pin is connected.
The electric current for flowing through the 4th resistance is iM,R1~R15Respectively first resistor~corresponding resistance value of the 15th resistance, C2For
The corresponding capacitance of second capacitor, the first pin output of the first LF347N chip is v after the first reverse phase proportioner0Use formula
(1) it indicates:
Wherein, ε=R7R4/R2。
The 7th pin output of first LF347N chip is-v0, two input signals of multiplier are AD633JN core respectively
The v at the end piece X10With the q at the end Y2, wherein symbol q represents memristor internal charge signal, the output v of the w pin of AD633JN chipw
It is indicated with formula (2):
vw=q v0(2)；
The 14th pin output of first LF347N chip is v14It is indicated with formula (3)
The 8th pin output of first LF347N chip is vMIt is indicated using formula (4)
First pin output variable of the 2nd LF347N chip is defined as q to be indicated using formula (5)
Then the expression of active memristor is indicated using formula (6)
Certainly, the above description is not a limitation of the present invention, and the present invention is also not limited to the example above, this technology neck
The variations, modifications, additions or substitutions that the technical staff in domain is made within the essential scope of the present invention also should belong to of the invention
Protection scope.
Claims (6)
1. a kind of active memristor emulator, which is characterized in that including resistor network, reverse phase proportioner, inverting integrator and multiply
Musical instruments used in a Buddhist or Taoist mass；
The reverse phase proportioner includes the first reverse phase proportioner, the second reverse phase proportioner, third reverse phase proportioner and the 4th reverse phase
Proportioner is configurable for realizing output voltage and input voltage at reverse phase scale operation relationship；
The resistor network includes the 4th resistance, and one end of the 4th resistance connects power input, and the other end passes through second resistance
It is connected with the first reverse phase proportioner；
The reverse phase meter integrator, which is configurable for realizing, carries out integral operation to voltage；
The multiplier is configurable for realizing the multiplication of two input signals.
2. a kind of active memristor emulator as described in claim 1, which is characterized in that the first reverse phase proportioner, the
The part pin structure of the first LF347 chip is respectively adopted in two reverse phase proportioners, third reverse phase proportioner and the 4th reverse phase proportioner
At reverse phase meter integrator is made of the part pin of the 2nd LF347 chip, and multiplier is constituted using AD633JN chip.
3. a kind of active memristor emulator as claimed in claim 2, which is characterized in that the first reverse phase proportioner is by the
The first pin, second pin and the third pin composition of one LF347N chip, the second reverse phase proportioner is by the first LF347N chip
The 5th pin, the 6th pin and the 7th pin composition, third reverse phase proportioner by the first LF347N chip the 8th pin, the
Nine pins and the tenth pin composition, the 4th reverse phase proportioner by the 12nd pin of the first LF347N chip, the 13rd pin and
14th pin composition；
First pin of the first LF347N chip is connected by the 7th resistance with its second pin, and second pin passes through the second electricity
Resistance connects power input with the 4th resistance, and third pin connects power input by first resistor and passes through third simultaneously
Resistance eutral grounding；
5th pin of the first LF347N chip is grounded, and the 6th pin connects the of the first LF347N chip by the 6th resistance
One pin, the 7th pin are connected by the 9th resistance with its 6th pin；
8th pin of the first LF347N chip is connected by the 8th resistance with its 9th pin, and its 8th pin passes through second
Resistance is connected with the second pin of the first LF347N chip, and the 9th pin is connected by the 5th resistance with its first pin,
9th pin is connected by twelfth resistor with the 14th pin of device, the tenth pin ground connection；
12nd pin of the first LF347N chip is grounded, and the 13rd pin passes through eleventh resistor and its 14th pin phase
Even, and its 14th pin is connected by thirteenth resistor with the second pin of the 2nd LF347 chip.
4. a kind of active memristor emulator as claimed in claim 2, which is characterized in that the inverting integrator uses second
The first pin, second pin and the third pin of LF347N chip are constituted, and the first pin of the 2nd LF347N chip passes through second
Capacitor is connected with its second pin, and second pin is connected by the 15th resistance with its first pin, and its second pin is logical
The 14th resistance is crossed to be connected with the 7th pin of the first LF347N chip.
5. a kind of active memristor emulator as claimed in claim 2, which is characterized in that the X1 of the AD633JN chip draws
Foot is connected with the first pin of the first LF347N chip, and the Y1 pin of AD633JN chip draws with the first of the 2nd LF347N chip
Foot is connected, and X1 pin and Y1 the pin ground connection of AD633JN chip, VS+ pin meet power supply VCC, and VS- pin meets power supply VEE,
Its Z pin ground connection, W pin are connected by the tenth resistance with the 13rd pin of reverse phase proportioner U1D.
6. a kind of active memristor emulator a method as claimed in any one of claims 1 to 5, which is characterized in that flow through the electricity of the 4th resistance
Stream is iM,R1~R15Respectively first resistor~corresponding resistance value of the 15th resistance, C2For the corresponding capacitance of the second capacitor, warp
The the first pin output for crossing the first LF347N chip after the first reverse phase proportioner is v0It is indicated with formula (1):
The 7th pin output of first LF347N chip is-v0, two input signals of multiplier are AD633JN chip X1 respectively
The v at end0With the q at the end Y2, wherein symbol q represents memristor internal charge signal, wherein ε=R7R4/R2, the w of AD633JN chip
The output v of pinwIt is indicated with formula (2):
The 14th pin output of first LF347N chip is v14It is indicated with formula (3)
The 8th pin output of first LF347N chip is vMIt is indicated using formula (4)
First pin output variable of the 2nd LF347N chip is defined as q to be indicated using formula (5)
Then the expression of active memristor is indicated using formula (6)
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110110494A (en) * | 2019-06-09 | 2019-08-09 | 山东科技大学 | A kind of equivalent simulation circuit of double active absolute value magnetic control memristors in part |
| CN110222425A (en) * | 2019-06-09 | 2019-09-10 | 山东科技大学 | A kind of equivalent simulation circuit having source domain cubic polynomial magnetic control memristor with twin part |
| CN110765718A (en) * | 2019-09-24 | 2020-02-07 | 杭州电子科技大学 | Binary memristor circuit simulator |
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| US20120194967A1 (en) * | 2011-02-01 | 2012-08-02 | Martin Anthony Keane | Signal-processing devices having one or more memristors |
| CN103219983A (en) * | 2013-04-16 | 2013-07-24 | 杭州电子科技大学 | Memristor equivalent simulation circuit |
| US9019030B1 (en) * | 2014-09-18 | 2015-04-28 | King Fahd University Of Petroleum And Minerals | Memristor-based emulator for use in digital modulation |
| CN108718190A (en) * | 2018-06-01 | 2018-10-30 | 杭州电子科技大学 | A kind of local active memristor emulator of exponential type |
| CN109086558A (en) * | 2018-09-29 | 2018-12-25 | 杭州电子科技大学 | The local active memristor emulator of logarithmic |
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2019
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120194967A1 (en) * | 2011-02-01 | 2012-08-02 | Martin Anthony Keane | Signal-processing devices having one or more memristors |
| CN103219983A (en) * | 2013-04-16 | 2013-07-24 | 杭州电子科技大学 | Memristor equivalent simulation circuit |
| US9019030B1 (en) * | 2014-09-18 | 2015-04-28 | King Fahd University Of Petroleum And Minerals | Memristor-based emulator for use in digital modulation |
| CN108718190A (en) * | 2018-06-01 | 2018-10-30 | 杭州电子科技大学 | A kind of local active memristor emulator of exponential type |
| CN109086558A (en) * | 2018-09-29 | 2018-12-25 | 杭州电子科技大学 | The local active memristor emulator of logarithmic |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110110494A (en) * | 2019-06-09 | 2019-08-09 | 山东科技大学 | A kind of equivalent simulation circuit of double active absolute value magnetic control memristors in part |
| CN110222425A (en) * | 2019-06-09 | 2019-09-10 | 山东科技大学 | A kind of equivalent simulation circuit having source domain cubic polynomial magnetic control memristor with twin part |
| CN110110494B (en) * | 2019-06-09 | 2023-04-18 | 山东科技大学 | Equivalent analog circuit of resistor is recalled to two local active absolute value magnetic controls |
| CN110222425B (en) * | 2019-06-09 | 2023-04-18 | 山东科技大学 | Equivalent analog circuit with twin local active domain cubic polynomial magnetic control memristor |
| CN110765718A (en) * | 2019-09-24 | 2020-02-07 | 杭州电子科技大学 | Binary memristor circuit simulator |
| CN110765718B (en) * | 2019-09-24 | 2024-05-03 | 杭州电子科技大学 | Binary memristor circuit simulator |
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