CN109830475A - High colour gamut quantum dot lamp bar, preparation method and its backlight module - Google Patents

High colour gamut quantum dot lamp bar, preparation method and its backlight module Download PDF

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Publication number
CN109830475A
CN109830475A CN201910120668.2A CN201910120668A CN109830475A CN 109830475 A CN109830475 A CN 109830475A CN 201910120668 A CN201910120668 A CN 201910120668A CN 109830475 A CN109830475 A CN 109830475A
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quantum dot
layer
heat insulation
lamp bar
colour gamut
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朱新远
黄海涛
刘晓东
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Nantong Rrich New Materials Ltd By Share Ltd
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Nantong Rrich New Materials Ltd By Share Ltd
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Abstract

The invention discloses a kind of high colour gamut quantum dot lamp bar, preparation method and its backlight module, the high colour gamut quantum dot lamp bar includes circuit substrate, luminescence chip, heat insulation packed layer, quantum dot layer and the oxygen encapsulated layer that blocks water.Several luminescence chips are set to the circuit substrate top surface, the heat insulation packed layer is fixed at the luminescence chip top surface, the oxygen encapsulated layer that blocks water states the setting of heat insulation packed layer relative close with described, and the quantum dot layer is set between the heat insulation packed layer and the oxygen encapsulated layer that blocks water.It is solidificated on luminescence chip by heat insulation packed layer, quantum dot layer and the oxygen encapsulated layer level that blocks water, structure is simple, largely reduces the usage amount and process loss of quanta point material, obtains the display effect of high colour gamut.

Description

High colour gamut quantum dot lamp bar, preparation method and its backlight module
Technical field
The present invention relates to field of display technology more particularly to a kind of high colour gamut quantum dot lamp bars, preparation method and its backlight Mould group.
Background technique
Quantum dot mainly includes the quantum dot light emitting based on quanta point electroluminescent characteristic in the application of field of display technology Diode display technology and quantum dot back light source technique based on quantum dot light Photoluminescence Properties.This two quantum dot display technologies In addition to making to show that the manufacture of equipment is extremely frivolous, color representation is more outstanding, and colour gamut degree is obviously improved, and brings for user fresher Gorgeous true color experience, compared to the great superiority of LCD display technology.
Quantum dot can be enclosed in LED in display technology, be enclosed in the glass tube beside display, or quantum is made Point film is placed on diffuser plate or light guide plate.LED light source has been used widely in backlight industry, for quantum lighting For item, extend the problem of service life of LED light source has become research staff's urgent need to resolve.And it is well known that quantum dot Luminous efficiency it is more sensitive to change of external conditions, quantum dot is limited to the tolerance of high temperature, and excessively high temperature can reduction amount The luminous efficiency of son point, or even make quantum point failure, and the quantum dot of nano-scale is very sensitive to water oxygen also as OLED, It easily generates surface texture defect and fails.
Currently, the heat dissipation problem of LED light mainly uses heat-conducting glue to solve, there are heatproof, ageing-resistant effect are poor for this material The shortcomings that, for quantum dot is shown, this radiating mode cannot be met the requirements.In addition, utilizing conventional single layer LED packaging plastic Water protects the quantum dot in lamp bar, heat-insulated limited with barrier water oxygen ability, although the LED core of lower section can be protected Piece, but for more fragile quantum dot, the protection that this encapsulation glue provides cannot be met the requirements.Therefore, extend The service life of quantum dot lamp bar, which is meant that, carries out multiple protective to quantum dot therein with special material, is imitated with barrier The better material of fruit replaces encapsulation glue to prepare long-life quantum dot lamp bar, and external high temperature and water oxygen environment can be prevented to quantum The destruction of point.
Summary of the invention
The main object of the present invention is to provide a kind of good heat dissipation effect and the good high colour gamut quantum dot lamp bar of airtightness, system Preparation Method and its backlight module.
A kind of high colour gamut quantum dot lamp bar proposed by the present invention, including circuit substrate, luminescence chip, heat insulation packed layer, amount Son point layer and the oxygen encapsulated layer that blocks water, several luminescence chips are set to the circuit substrate top surface, and the heat insulation packed layer is solid Surely it is set to the luminescence chip top surface, the oxygen encapsulated layer that blocks water is arranged with the heat insulation packed layer relative close of stating, described Quantum dot layer is set between the heat insulation packed layer and the oxygen encapsulated layer that blocks water.
Further, the quantum dot layer is by containing green quantum dot, red quantum dot, encapsulation glue, diffusion particle, resisting The material of oxidant is made.
Further, the heat insulation packed layer is by containing heat-barrier material, encapsulation glue, diffusion particle, anti-aging auxiliary agent Material is made.
Further, the heat-barrier material includes one of nanoclay, aluminium nitride, beryllium oxide, aluminium powder or a variety of.
Further, the oxygen encapsulated layer that blocks water containing barrier material, encapsulation glue, diffusion particle, anti-aging by helping The material of agent is made.
Further, the barrier material includes silica, aluminium oxide, polypropylene, polyvinylidene chloride, ethylene-vinyl One of alcohol random copolymer is a variety of.
A kind of high colour gamut quantum dot lamp bar preparation method proposed by the present invention, comprising:
Several luminescence chips are arranged on circuit substrate;
In the luminescence chip surface drop heat insulation packed layer glue and solidify, obtains heat insulation packed layer;
In the heat insulation packed layer surface drop quantum dot layer glue and solidify, obtains quantum dot layer;
On the quantum dot layer surface, drop, which blocks water, oxygen encapsulated layer glue and solidifies, and obtains the oxygen encapsulated layer that blocks water.
Further, described in the heat insulation packed layer surface drop quantum dot layer glue and to solidify and obtain quantum dot layer Before step, comprising:
Encapsulation glue is dissolved in after quantum dot powder is carried out the processing of high molecular material package and is stirred evenly, and quantum dot layer is obtained Glue.
A kind of backlight module proposed by the present invention, including backlight module lens, reflectance coating, metal backing, diffuser plate or lead Tabula rasa, diffusion barrier, brightness enhancement film and liquid crystal display panel further include high colour gamut quantum dot lamp bar, the high colour gamut quantum dot lamp bar Including circuit substrate, luminescence chip, heat insulation packed layer, quantum dot layer and the oxygen encapsulated layer that blocks water, several luminescence chips are set In the circuit substrate top surface, the heat insulation packed layer is fixed at the luminescence chip top surface, the oxygen encapsulated layer that blocks water The setting of heat insulation packed layer relative close is stated with described, the quantum dot layer is set to the heat insulation packed layer and the oxygen envelope that blocks water It fills between layer;
The reflectance coating is set to the metal backing bottom and inside, and the circuit substrate is set to the metal backing bottom Or inside, several backlight module lens are correspondingly arranged in the circuit substrate top surface, and the backlight module lens and institute Luminescence chip is stated to be oppositely arranged, the diffusion barrier includes upper diffusion barrier and lower diffusion barrier, the brightness enhancement film include upper brightness enhancement film and Lower brightness enhancement film, the diffuser plate or light guide plate are set to above the high colour gamut quantum dot lamp bar or side, successively arranges in pairs or groups thereon Lower diffusion barrier, lower brightness enhancement film, upper brightness enhancement film, upper diffusion barrier and liquid crystal display panel.
Further, the backlight module lens include lens body, and the lens body is equipped with light source mounting slot, enters light Face, reflective surface and light-emitting surface, the lens body are made of optical grade material.
High colour gamut quantum dot lamp bar, preparation method and its backlight module proposed by the present invention, pass through heat insulation packed layer, quantum Point layer and the oxygen encapsulated layer level that blocks water are solidificated on luminescence chip, and structure is simple, save manufacturing cost, promote yields;It will High colour gamut quantum dot lamp bar is applied in backlight module, reduces the usage amount and process loss of quanta point material, the amount of improving The utilization efficiency of son point, obtains the display effect of high colour gamut.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the high colour gamut quantum dot lamp bar of one embodiment of the invention;
Fig. 2 is the structural schematic diagram of one embodiment of the invention backlight module;
Fig. 3 is the structural schematic diagram for the quantum dot lamp bar that another embodiment of the present invention is collocated with backlight module lens;
Fig. 4 is the structural schematic diagram of another embodiment of the present invention backlight module;
Fig. 5 is the structural schematic diagram for the quantum dot lamp bar that another embodiment of the present invention is collocated with backlight module lens;
Fig. 6 is the structural schematic diagram of another embodiment of the present invention backlight module.
1 circuit substrate, 2 luminescence chips, 3 heat insulation packed layers, 4 quantum dot layers, 5 block water oxygen encapsulated layer, 6 high colour gamut quantum Point lamp bar, 7 light guide plates, 8 lower diffusion barriers, 9 lower brightness enhancement films, brightness enhancement film on 10, diffusion barrier on 11,12 liquid crystal display panels, 13 is anti- Film is penetrated, 14 mould group frames, 15 light modulation sites, 16 first lens bodies, 17 light source mounting slots, 18 metal backings, 19 reflector plates, 20 contain The lamp bar of first lens, 21 diffuser plates, 22 second lens bodies, 23, bracket, 24 contain the lamp bar of the second lens.
The embodiments will be further described with reference to the accompanying drawings for the realization, the function and the advantages of the object of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete Site preparation description, it is clear that described embodiment is only a part of the embodiments of the present invention, instead of all the embodiments.Base Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts it is all its Its embodiment, shall fall within the protection scope of the present invention.
It is to be appreciated that the directional instruction (such as up, down, left, right, before and after ...) of institute is only used in the embodiment of the present invention In explaining in relative positional relationship, the motion conditions etc. under a certain particular pose (as shown in the picture) between each component, if should When particular pose changes, then directionality instruction also correspondingly changes correspondingly, and the connection, which can be, to be directly connected to, It can be and be indirectly connected with.
It in addition, the technical solution between each embodiment can be combined with each other, but must be with ordinary skill Based on personnel can be realized, this technical side will be understood that when the combination of technical solution appearance is conflicting or cannot achieve The combination of case is not present, also not the present invention claims protection scope within.
As shown in Figure 1, propose a kind of high colour gamut quantum dot lamp bar of one embodiment of the present invention, including circuit substrate 1, Luminescence chip 2, heat insulation packed layer 3, quantum dot layer 4 and the oxygen encapsulated layer 5 that blocks water, several luminescence chips 2 are pushed up set on circuit substrate 1 Face, the luminescence chip 2 in the present embodiment are set as LED blue chip, and heat insulation packed layer 3 is fixed at 2 top surface of luminescence chip, blocks water Resistance oxygen encapsulated layer 5 is set to heat insulation packed layer 3 and the oxygen encapsulation that blocks water with the setting of 3 relative close of heat insulation packed layer, quantum dot layer 4 is stated Between layer 5.Contain organic siliconresin, E-12 epoxy resin, nanoclay, nano aluminum nitride powder, oxidation in heat insulation packed layer 3 Beryllium, Silane coupling agent KH550, di-2-ethylhexylphosphine oxide hexamethylene alkanamine (4,4'-PACM), four [β-(3,5- di-tert-butyl-hydroxy phenyl) Propionic acid] pentaerythritol ester;Contain green CdSe quantum dot, red CdSe quantum dots, 4,4'- (1- methyl Asia second in quantum dot layer 4 Base) biphenol, (chloromethyl) ethylene oxide, 2- acrylate, 1,6 hexanediol diacrylate, (2,4,6- trimethylbenzene first Acyl group) diphenyl phosphine oxide, poly methyl silsesquioxane, three (2,4- di-t-butyl) phenyl-phosphites;Block water oxygen encapsulated layer 5 In contain silica, polyacrylic resin, polyimide resin, polyacrylamide, isophorone diamine, silicon carbide, four [β- (3,5- di-tert-butyl-hydroxy phenyl) propionic acid] pentaerythritol ester, bis- (2,2,6,6- tetramethyl -4- piperidyl) sebacates. Its Green CdSe quantum dot dominant wavelength be 530 ± 2nm, half-peak breadth 28nm, red CdSe quantum dots dominant wavelength be 630 ± 2nm, half-peak breadth 30nm.Luminescence chip is solidificated in by heat insulation packed layer 3, quantum dot layer 4 and 5 level of oxygen encapsulated layer that blocks water On 2, structure is simple, saves manufacturing cost, improves the yields of high colour gamut quantum dot lamp bar.
In the present embodiment, quantum dot layer 4 by containing green quantum dot, red quantum dot, encapsulation glue, diffusion particle, The material of antioxidant is made.Heat insulation packed layer 3 by containing heat-barrier material, encapsulation glue, diffusion particle, anti-aging auxiliary agent material Material is made.Heat-barrier material includes one of nanoclay, aluminium nitride, beryllium oxide, aluminium powder or a variety of.Block water oxygen encapsulated layer 5 It is made of the material containing barrier material, encapsulation glue, diffusion particle, anti-aging auxiliary agent.Barrier material includes silica, oxidation One of aluminium, polypropylene, polyvinylidene chloride, ethylene vinyl alcohol copolymer are a variety of.
As shown in Figure 1, proposing a kind of high colour gamut quantum dot lamp bar preparation method of one embodiment of the present invention, comprising:
Several luminescence chips 2 are arranged on circuit substrate 1 S1;
S2 in 2 surface drop heat insulation packed layer glue of luminescence chip and solidifies, obtains heat insulation packed layer 3;
S3 in 3 surface drop quantum dot layer glue of heat insulation packed layer and solidifies, obtains quantum dot layer 4;
S4 blocks water in 4 surface drop of quantum dot layer and oxygen encapsulated layer glue and solidifies, obtains the oxygen encapsulated layer 5 that blocks water.
In the present embodiment, in 3 surface drop quantum dot layer glue of heat insulation packed layer and solidify and obtain the step of quantum dot layer 4 Before rapid, comprising:
S5 is dissolved in encapsulation glue after quantum dot powder is carried out the processing of high molecular material package and stirs evenly, obtains quantum Point layer glue.
As shown in Fig. 2, propose one embodiment of the present invention a kind of backlight module, including reflectance coating 13, mould group frame 14, Light guide plate 7, diffusion barrier, brightness enhancement film and liquid crystal display panel 12 further include high colour gamut quantum dot lamp bar 6, the high colour gamut quantum Point lamp bar 6 includes circuit substrate 1, luminescence chip 2, heat insulation packed layer 3, quantum dot layer 4 and the oxygen encapsulated layer 5 that blocks water, if drying hair Optical chip 2 is set to 1 top surface of circuit substrate, and heat insulation packed layer 3 is fixed at 2 top surface of luminescence chip, block water oxygen encapsulated layer 5 with state The setting of 3 relative close of heat insulation packed layer, quantum dot layer 4 are set between heat insulation packed layer 3 and the oxygen encapsulated layer 5 that blocks water;Reflectance coating 13 are set to 14 bottom of mould group frame, and circuit substrate 1 is set to the inside of mould group frame 14, and diffusion barrier includes upper diffusion barrier 11 and lower diffusion barrier 8, Brightness enhancement film includes upper brightness enhancement film 10 and lower brightness enhancement film 9, and high colour gamut quantum dot lamp bar 6 is set to 7 side of light guide plate, light guide plate Diffusion barrier 8, lower brightness enhancement film 9, upper brightness enhancement film 10, upper diffusion barrier 11 and liquid crystal display panel 12 under 7 tops are successively arranged in pairs or groups.
What the high colour gamut quantum dot lamp bar 6 of the present embodiment was arranged in pairs or groups is side entering type display backlight modular structure, is specifically included The light guide plate 7 that is set gradually, lower diffusion barrier 8, lower brightness enhancement film 9, upper brightness enhancement film 10, upper diffusion barrier 11, liquid crystal display panel 12, Reflectance coating 13, mould group frame 14, light modulation site 15.LED blue chip, quantum dot layer 4 issue blue, red, green light and constitute three primary colors, And the feux rouges and green light of quantum dot sending have the wide emission peak of narrow half-wave, and the color domain coverage ratio of display can be improved.High colour gamut Quantum dot lamp bar 6 is set to 14 inner sidewall of mould group frame, and is oppositely arranged with the side wall of light guide plate 7, and light guide plate 7 is by high colour gamut quantum dot The point light source that lamp bar 6 issues equably is converted into area source.Mould group frame 14 can be by bottom plate and enclosing the side plate set on bottom plate surrounding Composition, and the inside of bottom plate is equipped with reflectance coating 13, with the service efficiency for improving light, and the folded diffusion barrier set and prismatic brightness The multi-direction optical homogeneity in space and luminance gain effect may be implemented in film, further promotes the effect that high colour gamut is shown.
As shown in figure 3, proposing a kind of backlight module lens of another preferred embodiment of the present invention, first lens body 16 Material selection PMMA, PS or PC optical material, the first lens body 16 include light source mounting slot 17, incidence surface and light-emitting surface; Light source mounting slot 17 is located at the lower section of incidence surface, and incidence surface includes entering spire face and being located to install positioned at the top surface of mounting groove The incident side wall surface of the side peripheral wall of slot.
As shown in figure 4, proposing a kind of backlight module combined with Fig. 3, this high colour gamut quantum dot lamp bar 6 is used to arrange in pairs or groups directly Following formula display backlight modular structure, including set gradually metal backing 18, reflector plate 19, the lamp bar 20 containing the first lens, Diffuser plate 21, lower diffusion barrier 8, lower brightness enhancement film 9, upper brightness enhancement film 10, upper diffusion barrier 11 and liquid crystal display panel 12.Luminescence chip 2 The blue light issued can excite red quantum dot and green quantum dot in quantum dot layer 4 to generate red light and green light, simultaneously Three primary colors are constituted with the blue light for having neither part nor lot in conversion, the various colorss such as white light is mixed to get, is shown on liquid crystal display panel 12 wide The color of colour gamut.The above-mentioned lamp bar 20 for containing the first lens is set to 18 inside of metal backing, and the medial surface of metal backing 18 is equipped with Reflector plate 19, side wall is to be obliquely installed, so that mixed light space is trapezoidal.Above-mentioned reflector plate 19, diffusion barrier and brightness enhancement film, Ke Yizeng The service efficiency for adding light promotes the uniformity of display, realizes optics luminance gain, further increases the effect that high colour gamut is shown.
As shown in figure 5, propose a kind of backlight module lens of another preferred embodiment of the present invention, the second lens body 22 Material selection PMMA, PS or PC optical material.Second lens body 22 includes light source mounting slot 17, incidence surface, reflective surface and goes out Smooth surface;Light source mounting slot 17 is located at the lower section of incidence surface, and incidence surface includes entering spire face and position positioned at the top surface of mounting groove In the incident side wall surface of the side peripheral wall of mounting groove.Reflective surface is used for from the light total reflection of spire face incidence is entered to light-emitting surface, out Smooth surface include for be emitted reflective surface total reflection light upper light-emitting surface and for being emitted the light from incident side wall surface incidence Lower light-emitting surface.
As shown in fig. 6, proposing a kind of backlight module combined with Fig. 5, this high colour gamut quantum dot lamp bar 6 is used to arrange in pairs or groups directly Following formula display backlight modular structure, including set gradually metal backing 18, reflector plate 19, be equipped with containing the second lens Lamp bar 24, diffuser plate 21, lower diffusion barrier 8, lower brightness enhancement film 9, upper brightness enhancement film 10, upper diffusion barrier 11, liquid crystal display panel 12.It shines The blue light that chip 2 issues can excite in quantum dot layer 4 quantum dot to generate green light and red light, at the same with have neither part nor lot in conversion Blue light constitutes three primary colors, is mixed to get the various colorss such as white light, the color of wide colour gamut is shown on liquid crystal display panel 12.
High colour gamut quantum dot lamp bar of the present invention includes circuit substrate 1, luminescence chip 2, heat insulation packed layer 3, quantum Point layer 4, block water oxygen encapsulated layer 5, avoids the production technology of quantum dot film and quantum contact plate complexity, saves preparation cost, Improve yields.High colour gamut quantum dot lamp bar is applied in back light model setting technology, quantum dot material is largely reduced The usage amount and process loss of material, improve the utilization efficiency of quantum dot, reduce quantum dot backlight cost, obtain high color The display effect in domain, meanwhile, this high colour gamut quantum dot lamp bar is matched with the manufacturing process of complete system plant's display module, is advantageously implemented Extensive industrialization has very big technique compatible degree and market application prospect.
The above description is only a preferred embodiment of the present invention, is not intended to limit the scope of the invention, all utilizations Equivalent structure or equivalent flow shift made by description of the invention and accompanying drawing content is applied directly or indirectly in other correlations Technical field, be included within the scope of the present invention.

Claims (10)

1. a kind of high colour gamut quantum dot lamp bar, which is characterized in that including circuit substrate, luminescence chip, heat insulation packed layer, quantum dot Layer and the oxygen encapsulated layer that blocks water, several luminescence chips are set to the circuit substrate top surface, and the heat insulation packed layer fixation is set In the luminescence chip top surface, the oxygen encapsulated layer that blocks water states the setting of heat insulation packed layer relative close, the quantum with described Point layer is set between the heat insulation packed layer and the oxygen encapsulated layer that blocks water.
2. high colour gamut quantum dot lamp bar according to claim 1, which is characterized in that the quantum dot layer is by containing green amount Sub- point, red quantum dot, encapsulation glue, diffusion particle, antioxidant material be made.
3. high colour gamut quantum dot lamp bar according to claim 1, which is characterized in that the heat insulation packed layer is by containing heat-insulated Material, encapsulation glue, diffusion particle, anti-aging auxiliary agent material be made.
4. high colour gamut quantum dot lamp bar according to claim 3, which is characterized in that the heat-barrier material is viscous including nanometer One of soil, aluminium nitride, beryllium oxide, aluminium powder are a variety of.
5. high colour gamut quantum dot lamp bar according to claim 1, which is characterized in that the oxygen encapsulated layer that blocks water is by containing barrier Material, encapsulation glue, diffusion particle, anti-aging auxiliary agent material be made.
6. a kind of high colour gamut quantum dot lamp bar according to claim 5, which is characterized in that the barrier material includes second One of alkene-vinyl alcohol random copolymers, silica, aluminium oxide, polypropylene and polyvinylidene chloride are a variety of.
7. a kind of high colour gamut quantum dot lamp bar preparation method characterized by comprising
Several luminescence chips are arranged on circuit substrate;
In the luminescence chip surface drop heat insulation packed layer glue and solidify, obtains heat insulation packed layer;
In the heat insulation packed layer surface drop quantum dot layer glue and solidify, obtains quantum dot layer;
On the quantum dot layer surface, drop, which blocks water, oxygen encapsulated layer glue and solidifies, and obtains the oxygen encapsulated layer that blocks water.
8. according to high colour gamut quantum dot lamp bar preparation method as claimed in claim 7, which is characterized in that described in the heat insulation packed Layer surface drop quantum dot layer glue and before solidifying the step of obtaining quantum dot layer, comprising:
Encapsulation glue is dissolved in after quantum dot powder is carried out the processing of high molecular material package and is stirred evenly, and quantum dot layer glue is obtained Water.
9. a kind of backlight module, including backlight module lens, reflectance coating, metal backing, diffuser plate or light guide plate, diffusion barrier, increasing Bright film and liquid crystal display panel, which is characterized in that further include high colour gamut quantum dot lamp bar, the high colour gamut quantum dot lamp bar includes Circuit substrate, luminescence chip, heat insulation packed layer, quantum dot layer and the oxygen encapsulated layer that blocks water, several luminescence chips are set to institute Circuit substrate top surface is stated, the heat insulation packed layer is fixed at the luminescence chip top surface, oxygen encapsulated layer and the institute of blocking water The setting of heat insulation packed layer relative close is stated, the quantum dot layer is set to the heat insulation packed layer and the oxygen encapsulated layer that blocks water Between;
The reflectance coating is set to the metal backing bottom and inside, and the circuit substrate is set to the metal backing bottom or interior Side, several backlight module lens are correspondingly arranged in the circuit substrate top surface, and the backlight module lens and the hair Optical chip is oppositely arranged, and the diffusion barrier includes upper diffusion barrier and lower diffusion barrier, and the brightness enhancement film includes upper brightness enhancement film and lower increasing Bright film, the diffuser plate or light guide plate are set to above the high colour gamut quantum dot lamp bar or side, and successively collocation is lower thereon expands Dissipate film, lower brightness enhancement film, upper brightness enhancement film, upper diffusion barrier and liquid crystal display panel.
10. backlight module according to claim 9, which is characterized in that the backlight module lens include lens body, institute Lens body is stated equipped with light source mounting slot, incidence surface, reflective surface and light-emitting surface, the lens body is made of optical grade material.
CN201910120668.2A 2019-02-18 2019-02-18 High colour gamut quantum dot lamp bar, preparation method and its backlight module Pending CN109830475A (en)

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CN206497278U (en) * 2017-02-23 2017-09-15 常州华威新材料有限公司 A kind of quantum dot display device
CN206878027U (en) * 2017-03-20 2018-01-12 武汉保丽量彩科技有限公司 A kind of new high colour gamut luminescent device
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CN107706289A (en) * 2017-11-07 2018-02-16 青岛海信电器股份有限公司 Quantum dot LED and preparation method thereof
CN108110120A (en) * 2017-12-08 2018-06-01 青岛海信电器股份有限公司 Quantum dot LED and display device
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CN108615722A (en) * 2018-04-28 2018-10-02 安徽芯瑞达科技股份有限公司 A kind of backlight module blue chip, the high colour gamut LED lamp bead of green light chip
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113689784A (en) * 2021-09-01 2021-11-23 广东瑞捷光电股份有限公司 High-brightness quantum dot diffusion plate structure and manufacturing process thereof
CN113851470A (en) * 2021-09-24 2021-12-28 盐城东山精密制造有限公司 Novel high-color-gamut LED lamp panel and quantum film attaching method thereof

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