CN109830475A - High colour gamut quantum dot lamp bar, preparation method and its backlight module - Google Patents
High colour gamut quantum dot lamp bar, preparation method and its backlight module Download PDFInfo
- Publication number
- CN109830475A CN109830475A CN201910120668.2A CN201910120668A CN109830475A CN 109830475 A CN109830475 A CN 109830475A CN 201910120668 A CN201910120668 A CN 201910120668A CN 109830475 A CN109830475 A CN 109830475A
- Authority
- CN
- China
- Prior art keywords
- quantum dot
- layer
- heat insulation
- lamp bar
- colour gamut
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002096 quantum dot Substances 0.000 title claims abstract description 112
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 238000009413 insulation Methods 0.000 claims abstract description 49
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 41
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000001301 oxygen Substances 0.000 claims abstract description 39
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 38
- 238000004020 luminiscence type Methods 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000009792 diffusion process Methods 0.000 claims description 36
- 230000004888 barrier function Effects 0.000 claims description 35
- 239000003292 glue Substances 0.000 claims description 30
- 238000005538 encapsulation Methods 0.000 claims description 15
- 239000004973 liquid crystal related substance Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 7
- -1 polypropylene Polymers 0.000 claims description 7
- 239000000843 powder Substances 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 230000003712 anti-aging effect Effects 0.000 claims description 6
- 239000012752 auxiliary agent Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- 239000004743 Polypropylene Substances 0.000 claims description 3
- 229920001328 Polyvinylidene chloride Polymers 0.000 claims description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 3
- 229920001155 polypropylene Polymers 0.000 claims description 3
- 239000005033 polyvinylidene chloride Substances 0.000 claims description 3
- 239000003963 antioxidant agent Substances 0.000 claims description 2
- 230000003078 antioxidant effect Effects 0.000 claims description 2
- 229920005604 random copolymer Polymers 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 claims 1
- 239000002689 soil Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 84
- 238000005516 engineering process Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 4
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 4
- 239000003086 colorant Substances 0.000 description 3
- 239000012802 nanoclay Substances 0.000 description 3
- AUHZEENZYGFFBQ-UHFFFAOYSA-N 1,3,5-trimethylbenzene Chemical compound CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 235000019260 propionic acid Nutrition 0.000 description 2
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 2
- RNLHGQLZWXBQNY-UHFFFAOYSA-N 3-(aminomethyl)-3,5,5-trimethylcyclohexan-1-amine Chemical compound CC1(C)CC(N)CC(C)(CN)C1 RNLHGQLZWXBQNY-UHFFFAOYSA-N 0.000 description 1
- FIHBHSQYSYVZQE-UHFFFAOYSA-N 6-prop-2-enoyloxyhexyl prop-2-enoate Chemical compound C=CC(=O)OCCCCCCOC(=O)C=C FIHBHSQYSYVZQE-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- YFPJFKYCVYXDJK-UHFFFAOYSA-N Diphenylphosphine oxide Chemical compound C=1C=CC=CC=1[P+](=O)C1=CC=CC=C1 YFPJFKYCVYXDJK-UHFFFAOYSA-N 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229920000219 Ethylene vinyl alcohol Polymers 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 125000002252 acyl group Chemical group 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- XITRBUPOXXBIJN-UHFFFAOYSA-N bis(2,2,6,6-tetramethylpiperidin-4-yl) decanedioate Chemical class C1C(C)(C)NC(C)(C)CC1OC(=O)CCCCCCCCC(=O)OC1CC(C)(C)NC(C)(C)C1 XITRBUPOXXBIJN-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- VCAFTIGPOYBOIC-UHFFFAOYSA-N phenyl dihydrogen phosphite Chemical class OP(O)OC1=CC=CC=C1 VCAFTIGPOYBOIC-UHFFFAOYSA-N 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Landscapes
- Planar Illumination Modules (AREA)
- Liquid Crystal (AREA)
Abstract
The invention discloses a kind of high colour gamut quantum dot lamp bar, preparation method and its backlight module, the high colour gamut quantum dot lamp bar includes circuit substrate, luminescence chip, heat insulation packed layer, quantum dot layer and the oxygen encapsulated layer that blocks water.Several luminescence chips are set to the circuit substrate top surface, the heat insulation packed layer is fixed at the luminescence chip top surface, the oxygen encapsulated layer that blocks water states the setting of heat insulation packed layer relative close with described, and the quantum dot layer is set between the heat insulation packed layer and the oxygen encapsulated layer that blocks water.It is solidificated on luminescence chip by heat insulation packed layer, quantum dot layer and the oxygen encapsulated layer level that blocks water, structure is simple, largely reduces the usage amount and process loss of quanta point material, obtains the display effect of high colour gamut.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of high colour gamut quantum dot lamp bars, preparation method and its backlight
Mould group.
Background technique
Quantum dot mainly includes the quantum dot light emitting based on quanta point electroluminescent characteristic in the application of field of display technology
Diode display technology and quantum dot back light source technique based on quantum dot light Photoluminescence Properties.This two quantum dot display technologies
In addition to making to show that the manufacture of equipment is extremely frivolous, color representation is more outstanding, and colour gamut degree is obviously improved, and brings for user fresher
Gorgeous true color experience, compared to the great superiority of LCD display technology.
Quantum dot can be enclosed in LED in display technology, be enclosed in the glass tube beside display, or quantum is made
Point film is placed on diffuser plate or light guide plate.LED light source has been used widely in backlight industry, for quantum lighting
For item, extend the problem of service life of LED light source has become research staff's urgent need to resolve.And it is well known that quantum dot
Luminous efficiency it is more sensitive to change of external conditions, quantum dot is limited to the tolerance of high temperature, and excessively high temperature can reduction amount
The luminous efficiency of son point, or even make quantum point failure, and the quantum dot of nano-scale is very sensitive to water oxygen also as OLED,
It easily generates surface texture defect and fails.
Currently, the heat dissipation problem of LED light mainly uses heat-conducting glue to solve, there are heatproof, ageing-resistant effect are poor for this material
The shortcomings that, for quantum dot is shown, this radiating mode cannot be met the requirements.In addition, utilizing conventional single layer LED packaging plastic
Water protects the quantum dot in lamp bar, heat-insulated limited with barrier water oxygen ability, although the LED core of lower section can be protected
Piece, but for more fragile quantum dot, the protection that this encapsulation glue provides cannot be met the requirements.Therefore, extend
The service life of quantum dot lamp bar, which is meant that, carries out multiple protective to quantum dot therein with special material, is imitated with barrier
The better material of fruit replaces encapsulation glue to prepare long-life quantum dot lamp bar, and external high temperature and water oxygen environment can be prevented to quantum
The destruction of point.
Summary of the invention
The main object of the present invention is to provide a kind of good heat dissipation effect and the good high colour gamut quantum dot lamp bar of airtightness, system
Preparation Method and its backlight module.
A kind of high colour gamut quantum dot lamp bar proposed by the present invention, including circuit substrate, luminescence chip, heat insulation packed layer, amount
Son point layer and the oxygen encapsulated layer that blocks water, several luminescence chips are set to the circuit substrate top surface, and the heat insulation packed layer is solid
Surely it is set to the luminescence chip top surface, the oxygen encapsulated layer that blocks water is arranged with the heat insulation packed layer relative close of stating, described
Quantum dot layer is set between the heat insulation packed layer and the oxygen encapsulated layer that blocks water.
Further, the quantum dot layer is by containing green quantum dot, red quantum dot, encapsulation glue, diffusion particle, resisting
The material of oxidant is made.
Further, the heat insulation packed layer is by containing heat-barrier material, encapsulation glue, diffusion particle, anti-aging auxiliary agent
Material is made.
Further, the heat-barrier material includes one of nanoclay, aluminium nitride, beryllium oxide, aluminium powder or a variety of.
Further, the oxygen encapsulated layer that blocks water containing barrier material, encapsulation glue, diffusion particle, anti-aging by helping
The material of agent is made.
Further, the barrier material includes silica, aluminium oxide, polypropylene, polyvinylidene chloride, ethylene-vinyl
One of alcohol random copolymer is a variety of.
A kind of high colour gamut quantum dot lamp bar preparation method proposed by the present invention, comprising:
Several luminescence chips are arranged on circuit substrate;
In the luminescence chip surface drop heat insulation packed layer glue and solidify, obtains heat insulation packed layer;
In the heat insulation packed layer surface drop quantum dot layer glue and solidify, obtains quantum dot layer;
On the quantum dot layer surface, drop, which blocks water, oxygen encapsulated layer glue and solidifies, and obtains the oxygen encapsulated layer that blocks water.
Further, described in the heat insulation packed layer surface drop quantum dot layer glue and to solidify and obtain quantum dot layer
Before step, comprising:
Encapsulation glue is dissolved in after quantum dot powder is carried out the processing of high molecular material package and is stirred evenly, and quantum dot layer is obtained
Glue.
A kind of backlight module proposed by the present invention, including backlight module lens, reflectance coating, metal backing, diffuser plate or lead
Tabula rasa, diffusion barrier, brightness enhancement film and liquid crystal display panel further include high colour gamut quantum dot lamp bar, the high colour gamut quantum dot lamp bar
Including circuit substrate, luminescence chip, heat insulation packed layer, quantum dot layer and the oxygen encapsulated layer that blocks water, several luminescence chips are set
In the circuit substrate top surface, the heat insulation packed layer is fixed at the luminescence chip top surface, the oxygen encapsulated layer that blocks water
The setting of heat insulation packed layer relative close is stated with described, the quantum dot layer is set to the heat insulation packed layer and the oxygen envelope that blocks water
It fills between layer;
The reflectance coating is set to the metal backing bottom and inside, and the circuit substrate is set to the metal backing bottom
Or inside, several backlight module lens are correspondingly arranged in the circuit substrate top surface, and the backlight module lens and institute
Luminescence chip is stated to be oppositely arranged, the diffusion barrier includes upper diffusion barrier and lower diffusion barrier, the brightness enhancement film include upper brightness enhancement film and
Lower brightness enhancement film, the diffuser plate or light guide plate are set to above the high colour gamut quantum dot lamp bar or side, successively arranges in pairs or groups thereon
Lower diffusion barrier, lower brightness enhancement film, upper brightness enhancement film, upper diffusion barrier and liquid crystal display panel.
Further, the backlight module lens include lens body, and the lens body is equipped with light source mounting slot, enters light
Face, reflective surface and light-emitting surface, the lens body are made of optical grade material.
High colour gamut quantum dot lamp bar, preparation method and its backlight module proposed by the present invention, pass through heat insulation packed layer, quantum
Point layer and the oxygen encapsulated layer level that blocks water are solidificated on luminescence chip, and structure is simple, save manufacturing cost, promote yields;It will
High colour gamut quantum dot lamp bar is applied in backlight module, reduces the usage amount and process loss of quanta point material, the amount of improving
The utilization efficiency of son point, obtains the display effect of high colour gamut.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the high colour gamut quantum dot lamp bar of one embodiment of the invention;
Fig. 2 is the structural schematic diagram of one embodiment of the invention backlight module;
Fig. 3 is the structural schematic diagram for the quantum dot lamp bar that another embodiment of the present invention is collocated with backlight module lens;
Fig. 4 is the structural schematic diagram of another embodiment of the present invention backlight module;
Fig. 5 is the structural schematic diagram for the quantum dot lamp bar that another embodiment of the present invention is collocated with backlight module lens;
Fig. 6 is the structural schematic diagram of another embodiment of the present invention backlight module.
1 circuit substrate, 2 luminescence chips, 3 heat insulation packed layers, 4 quantum dot layers, 5 block water oxygen encapsulated layer, 6 high colour gamut quantum
Point lamp bar, 7 light guide plates, 8 lower diffusion barriers, 9 lower brightness enhancement films, brightness enhancement film on 10, diffusion barrier on 11,12 liquid crystal display panels, 13 is anti-
Film is penetrated, 14 mould group frames, 15 light modulation sites, 16 first lens bodies, 17 light source mounting slots, 18 metal backings, 19 reflector plates, 20 contain
The lamp bar of first lens, 21 diffuser plates, 22 second lens bodies, 23, bracket, 24 contain the lamp bar of the second lens.
The embodiments will be further described with reference to the accompanying drawings for the realization, the function and the advantages of the object of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiment is only a part of the embodiments of the present invention, instead of all the embodiments.Base
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts it is all its
Its embodiment, shall fall within the protection scope of the present invention.
It is to be appreciated that the directional instruction (such as up, down, left, right, before and after ...) of institute is only used in the embodiment of the present invention
In explaining in relative positional relationship, the motion conditions etc. under a certain particular pose (as shown in the picture) between each component, if should
When particular pose changes, then directionality instruction also correspondingly changes correspondingly, and the connection, which can be, to be directly connected to,
It can be and be indirectly connected with.
It in addition, the technical solution between each embodiment can be combined with each other, but must be with ordinary skill
Based on personnel can be realized, this technical side will be understood that when the combination of technical solution appearance is conflicting or cannot achieve
The combination of case is not present, also not the present invention claims protection scope within.
As shown in Figure 1, propose a kind of high colour gamut quantum dot lamp bar of one embodiment of the present invention, including circuit substrate 1,
Luminescence chip 2, heat insulation packed layer 3, quantum dot layer 4 and the oxygen encapsulated layer 5 that blocks water, several luminescence chips 2 are pushed up set on circuit substrate 1
Face, the luminescence chip 2 in the present embodiment are set as LED blue chip, and heat insulation packed layer 3 is fixed at 2 top surface of luminescence chip, blocks water
Resistance oxygen encapsulated layer 5 is set to heat insulation packed layer 3 and the oxygen encapsulation that blocks water with the setting of 3 relative close of heat insulation packed layer, quantum dot layer 4 is stated
Between layer 5.Contain organic siliconresin, E-12 epoxy resin, nanoclay, nano aluminum nitride powder, oxidation in heat insulation packed layer 3
Beryllium, Silane coupling agent KH550, di-2-ethylhexylphosphine oxide hexamethylene alkanamine (4,4'-PACM), four [β-(3,5- di-tert-butyl-hydroxy phenyl)
Propionic acid] pentaerythritol ester;Contain green CdSe quantum dot, red CdSe quantum dots, 4,4'- (1- methyl Asia second in quantum dot layer 4
Base) biphenol, (chloromethyl) ethylene oxide, 2- acrylate, 1,6 hexanediol diacrylate, (2,4,6- trimethylbenzene first
Acyl group) diphenyl phosphine oxide, poly methyl silsesquioxane, three (2,4- di-t-butyl) phenyl-phosphites;Block water oxygen encapsulated layer 5
In contain silica, polyacrylic resin, polyimide resin, polyacrylamide, isophorone diamine, silicon carbide, four [β-
(3,5- di-tert-butyl-hydroxy phenyl) propionic acid] pentaerythritol ester, bis- (2,2,6,6- tetramethyl -4- piperidyl) sebacates.
Its Green CdSe quantum dot dominant wavelength be 530 ± 2nm, half-peak breadth 28nm, red CdSe quantum dots dominant wavelength be 630 ±
2nm, half-peak breadth 30nm.Luminescence chip is solidificated in by heat insulation packed layer 3, quantum dot layer 4 and 5 level of oxygen encapsulated layer that blocks water
On 2, structure is simple, saves manufacturing cost, improves the yields of high colour gamut quantum dot lamp bar.
In the present embodiment, quantum dot layer 4 by containing green quantum dot, red quantum dot, encapsulation glue, diffusion particle,
The material of antioxidant is made.Heat insulation packed layer 3 by containing heat-barrier material, encapsulation glue, diffusion particle, anti-aging auxiliary agent material
Material is made.Heat-barrier material includes one of nanoclay, aluminium nitride, beryllium oxide, aluminium powder or a variety of.Block water oxygen encapsulated layer 5
It is made of the material containing barrier material, encapsulation glue, diffusion particle, anti-aging auxiliary agent.Barrier material includes silica, oxidation
One of aluminium, polypropylene, polyvinylidene chloride, ethylene vinyl alcohol copolymer are a variety of.
As shown in Figure 1, proposing a kind of high colour gamut quantum dot lamp bar preparation method of one embodiment of the present invention, comprising:
Several luminescence chips 2 are arranged on circuit substrate 1 S1;
S2 in 2 surface drop heat insulation packed layer glue of luminescence chip and solidifies, obtains heat insulation packed layer 3;
S3 in 3 surface drop quantum dot layer glue of heat insulation packed layer and solidifies, obtains quantum dot layer 4;
S4 blocks water in 4 surface drop of quantum dot layer and oxygen encapsulated layer glue and solidifies, obtains the oxygen encapsulated layer 5 that blocks water.
In the present embodiment, in 3 surface drop quantum dot layer glue of heat insulation packed layer and solidify and obtain the step of quantum dot layer 4
Before rapid, comprising:
S5 is dissolved in encapsulation glue after quantum dot powder is carried out the processing of high molecular material package and stirs evenly, obtains quantum
Point layer glue.
As shown in Fig. 2, propose one embodiment of the present invention a kind of backlight module, including reflectance coating 13, mould group frame 14,
Light guide plate 7, diffusion barrier, brightness enhancement film and liquid crystal display panel 12 further include high colour gamut quantum dot lamp bar 6, the high colour gamut quantum
Point lamp bar 6 includes circuit substrate 1, luminescence chip 2, heat insulation packed layer 3, quantum dot layer 4 and the oxygen encapsulated layer 5 that blocks water, if drying hair
Optical chip 2 is set to 1 top surface of circuit substrate, and heat insulation packed layer 3 is fixed at 2 top surface of luminescence chip, block water oxygen encapsulated layer 5 with state
The setting of 3 relative close of heat insulation packed layer, quantum dot layer 4 are set between heat insulation packed layer 3 and the oxygen encapsulated layer 5 that blocks water;Reflectance coating
13 are set to 14 bottom of mould group frame, and circuit substrate 1 is set to the inside of mould group frame 14, and diffusion barrier includes upper diffusion barrier 11 and lower diffusion barrier 8,
Brightness enhancement film includes upper brightness enhancement film 10 and lower brightness enhancement film 9, and high colour gamut quantum dot lamp bar 6 is set to 7 side of light guide plate, light guide plate
Diffusion barrier 8, lower brightness enhancement film 9, upper brightness enhancement film 10, upper diffusion barrier 11 and liquid crystal display panel 12 under 7 tops are successively arranged in pairs or groups.
What the high colour gamut quantum dot lamp bar 6 of the present embodiment was arranged in pairs or groups is side entering type display backlight modular structure, is specifically included
The light guide plate 7 that is set gradually, lower diffusion barrier 8, lower brightness enhancement film 9, upper brightness enhancement film 10, upper diffusion barrier 11, liquid crystal display panel 12,
Reflectance coating 13, mould group frame 14, light modulation site 15.LED blue chip, quantum dot layer 4 issue blue, red, green light and constitute three primary colors,
And the feux rouges and green light of quantum dot sending have the wide emission peak of narrow half-wave, and the color domain coverage ratio of display can be improved.High colour gamut
Quantum dot lamp bar 6 is set to 14 inner sidewall of mould group frame, and is oppositely arranged with the side wall of light guide plate 7, and light guide plate 7 is by high colour gamut quantum dot
The point light source that lamp bar 6 issues equably is converted into area source.Mould group frame 14 can be by bottom plate and enclosing the side plate set on bottom plate surrounding
Composition, and the inside of bottom plate is equipped with reflectance coating 13, with the service efficiency for improving light, and the folded diffusion barrier set and prismatic brightness
The multi-direction optical homogeneity in space and luminance gain effect may be implemented in film, further promotes the effect that high colour gamut is shown.
As shown in figure 3, proposing a kind of backlight module lens of another preferred embodiment of the present invention, first lens body 16
Material selection PMMA, PS or PC optical material, the first lens body 16 include light source mounting slot 17, incidence surface and light-emitting surface;
Light source mounting slot 17 is located at the lower section of incidence surface, and incidence surface includes entering spire face and being located to install positioned at the top surface of mounting groove
The incident side wall surface of the side peripheral wall of slot.
As shown in figure 4, proposing a kind of backlight module combined with Fig. 3, this high colour gamut quantum dot lamp bar 6 is used to arrange in pairs or groups directly
Following formula display backlight modular structure, including set gradually metal backing 18, reflector plate 19, the lamp bar 20 containing the first lens,
Diffuser plate 21, lower diffusion barrier 8, lower brightness enhancement film 9, upper brightness enhancement film 10, upper diffusion barrier 11 and liquid crystal display panel 12.Luminescence chip 2
The blue light issued can excite red quantum dot and green quantum dot in quantum dot layer 4 to generate red light and green light, simultaneously
Three primary colors are constituted with the blue light for having neither part nor lot in conversion, the various colorss such as white light is mixed to get, is shown on liquid crystal display panel 12 wide
The color of colour gamut.The above-mentioned lamp bar 20 for containing the first lens is set to 18 inside of metal backing, and the medial surface of metal backing 18 is equipped with
Reflector plate 19, side wall is to be obliquely installed, so that mixed light space is trapezoidal.Above-mentioned reflector plate 19, diffusion barrier and brightness enhancement film, Ke Yizeng
The service efficiency for adding light promotes the uniformity of display, realizes optics luminance gain, further increases the effect that high colour gamut is shown.
As shown in figure 5, propose a kind of backlight module lens of another preferred embodiment of the present invention, the second lens body 22
Material selection PMMA, PS or PC optical material.Second lens body 22 includes light source mounting slot 17, incidence surface, reflective surface and goes out
Smooth surface;Light source mounting slot 17 is located at the lower section of incidence surface, and incidence surface includes entering spire face and position positioned at the top surface of mounting groove
In the incident side wall surface of the side peripheral wall of mounting groove.Reflective surface is used for from the light total reflection of spire face incidence is entered to light-emitting surface, out
Smooth surface include for be emitted reflective surface total reflection light upper light-emitting surface and for being emitted the light from incident side wall surface incidence
Lower light-emitting surface.
As shown in fig. 6, proposing a kind of backlight module combined with Fig. 5, this high colour gamut quantum dot lamp bar 6 is used to arrange in pairs or groups directly
Following formula display backlight modular structure, including set gradually metal backing 18, reflector plate 19, be equipped with containing the second lens
Lamp bar 24, diffuser plate 21, lower diffusion barrier 8, lower brightness enhancement film 9, upper brightness enhancement film 10, upper diffusion barrier 11, liquid crystal display panel 12.It shines
The blue light that chip 2 issues can excite in quantum dot layer 4 quantum dot to generate green light and red light, at the same with have neither part nor lot in conversion
Blue light constitutes three primary colors, is mixed to get the various colorss such as white light, the color of wide colour gamut is shown on liquid crystal display panel 12.
High colour gamut quantum dot lamp bar of the present invention includes circuit substrate 1, luminescence chip 2, heat insulation packed layer 3, quantum
Point layer 4, block water oxygen encapsulated layer 5, avoids the production technology of quantum dot film and quantum contact plate complexity, saves preparation cost,
Improve yields.High colour gamut quantum dot lamp bar is applied in back light model setting technology, quantum dot material is largely reduced
The usage amount and process loss of material, improve the utilization efficiency of quantum dot, reduce quantum dot backlight cost, obtain high color
The display effect in domain, meanwhile, this high colour gamut quantum dot lamp bar is matched with the manufacturing process of complete system plant's display module, is advantageously implemented
Extensive industrialization has very big technique compatible degree and market application prospect.
The above description is only a preferred embodiment of the present invention, is not intended to limit the scope of the invention, all utilizations
Equivalent structure or equivalent flow shift made by description of the invention and accompanying drawing content is applied directly or indirectly in other correlations
Technical field, be included within the scope of the present invention.
Claims (10)
1. a kind of high colour gamut quantum dot lamp bar, which is characterized in that including circuit substrate, luminescence chip, heat insulation packed layer, quantum dot
Layer and the oxygen encapsulated layer that blocks water, several luminescence chips are set to the circuit substrate top surface, and the heat insulation packed layer fixation is set
In the luminescence chip top surface, the oxygen encapsulated layer that blocks water states the setting of heat insulation packed layer relative close, the quantum with described
Point layer is set between the heat insulation packed layer and the oxygen encapsulated layer that blocks water.
2. high colour gamut quantum dot lamp bar according to claim 1, which is characterized in that the quantum dot layer is by containing green amount
Sub- point, red quantum dot, encapsulation glue, diffusion particle, antioxidant material be made.
3. high colour gamut quantum dot lamp bar according to claim 1, which is characterized in that the heat insulation packed layer is by containing heat-insulated
Material, encapsulation glue, diffusion particle, anti-aging auxiliary agent material be made.
4. high colour gamut quantum dot lamp bar according to claim 3, which is characterized in that the heat-barrier material is viscous including nanometer
One of soil, aluminium nitride, beryllium oxide, aluminium powder are a variety of.
5. high colour gamut quantum dot lamp bar according to claim 1, which is characterized in that the oxygen encapsulated layer that blocks water is by containing barrier
Material, encapsulation glue, diffusion particle, anti-aging auxiliary agent material be made.
6. a kind of high colour gamut quantum dot lamp bar according to claim 5, which is characterized in that the barrier material includes second
One of alkene-vinyl alcohol random copolymers, silica, aluminium oxide, polypropylene and polyvinylidene chloride are a variety of.
7. a kind of high colour gamut quantum dot lamp bar preparation method characterized by comprising
Several luminescence chips are arranged on circuit substrate;
In the luminescence chip surface drop heat insulation packed layer glue and solidify, obtains heat insulation packed layer;
In the heat insulation packed layer surface drop quantum dot layer glue and solidify, obtains quantum dot layer;
On the quantum dot layer surface, drop, which blocks water, oxygen encapsulated layer glue and solidifies, and obtains the oxygen encapsulated layer that blocks water.
8. according to high colour gamut quantum dot lamp bar preparation method as claimed in claim 7, which is characterized in that described in the heat insulation packed
Layer surface drop quantum dot layer glue and before solidifying the step of obtaining quantum dot layer, comprising:
Encapsulation glue is dissolved in after quantum dot powder is carried out the processing of high molecular material package and is stirred evenly, and quantum dot layer glue is obtained
Water.
9. a kind of backlight module, including backlight module lens, reflectance coating, metal backing, diffuser plate or light guide plate, diffusion barrier, increasing
Bright film and liquid crystal display panel, which is characterized in that further include high colour gamut quantum dot lamp bar, the high colour gamut quantum dot lamp bar includes
Circuit substrate, luminescence chip, heat insulation packed layer, quantum dot layer and the oxygen encapsulated layer that blocks water, several luminescence chips are set to institute
Circuit substrate top surface is stated, the heat insulation packed layer is fixed at the luminescence chip top surface, oxygen encapsulated layer and the institute of blocking water
The setting of heat insulation packed layer relative close is stated, the quantum dot layer is set to the heat insulation packed layer and the oxygen encapsulated layer that blocks water
Between;
The reflectance coating is set to the metal backing bottom and inside, and the circuit substrate is set to the metal backing bottom or interior
Side, several backlight module lens are correspondingly arranged in the circuit substrate top surface, and the backlight module lens and the hair
Optical chip is oppositely arranged, and the diffusion barrier includes upper diffusion barrier and lower diffusion barrier, and the brightness enhancement film includes upper brightness enhancement film and lower increasing
Bright film, the diffuser plate or light guide plate are set to above the high colour gamut quantum dot lamp bar or side, and successively collocation is lower thereon expands
Dissipate film, lower brightness enhancement film, upper brightness enhancement film, upper diffusion barrier and liquid crystal display panel.
10. backlight module according to claim 9, which is characterized in that the backlight module lens include lens body, institute
Lens body is stated equipped with light source mounting slot, incidence surface, reflective surface and light-emitting surface, the lens body is made of optical grade material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910120668.2A CN109830475A (en) | 2019-02-18 | 2019-02-18 | High colour gamut quantum dot lamp bar, preparation method and its backlight module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910120668.2A CN109830475A (en) | 2019-02-18 | 2019-02-18 | High colour gamut quantum dot lamp bar, preparation method and its backlight module |
Publications (1)
Publication Number | Publication Date |
---|---|
CN109830475A true CN109830475A (en) | 2019-05-31 |
Family
ID=66863757
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910120668.2A Pending CN109830475A (en) | 2019-02-18 | 2019-02-18 | High colour gamut quantum dot lamp bar, preparation method and its backlight module |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN109830475A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113689784A (en) * | 2021-09-01 | 2021-11-23 | 广东瑞捷光电股份有限公司 | High-brightness quantum dot diffusion plate structure and manufacturing process thereof |
CN113851470A (en) * | 2021-09-24 | 2021-12-28 | 盐城东山精密制造有限公司 | Novel high-color-gamut LED lamp panel and quantum film attaching method thereof |
Citations (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201716944U (en) * | 2009-12-15 | 2011-01-19 | 康佳集团股份有限公司 | Led display device and television |
CN201787434U (en) * | 2010-07-27 | 2011-04-06 | 康佳集团股份有限公司 | Backlight source device and liquid crystal display |
KR20130043294A (en) * | 2011-10-20 | 2013-04-30 | 엘지디스플레이 주식회사 | Led pakage and method of fabricating the same |
CN105301841A (en) * | 2015-11-23 | 2016-02-03 | 青岛海信电器股份有限公司 | Backlight module and liquid crystal display equipment |
CN105372878A (en) * | 2015-12-04 | 2016-03-02 | 青岛海信电器股份有限公司 | Quantum dot luminescent device, backlight module and display device |
CN106383420A (en) * | 2016-08-31 | 2017-02-08 | 张家港康得新光电材料有限公司 | Quantum dot luminous device and backlight module |
CN206497278U (en) * | 2017-02-23 | 2017-09-15 | 常州华威新材料有限公司 | A kind of quantum dot display device |
CN107329201A (en) * | 2017-07-03 | 2017-11-07 | 深圳Tcl新技术有限公司 | Side entrance back module and display device |
CN206878027U (en) * | 2017-03-20 | 2018-01-12 | 武汉保丽量彩科技有限公司 | A kind of new high colour gamut luminescent device |
CN107706289A (en) * | 2017-11-07 | 2018-02-16 | 青岛海信电器股份有限公司 | Quantum dot LED and preparation method thereof |
CN108110120A (en) * | 2017-12-08 | 2018-06-01 | 青岛海信电器股份有限公司 | Quantum dot LED and display device |
WO2018099081A1 (en) * | 2016-11-30 | 2018-06-07 | 深圳市聚飞光电股份有限公司 | Method for packaging led lamp bead based on quantum dot fluorescent film |
CN108445664A (en) * | 2018-03-30 | 2018-08-24 | 京东方科技集团股份有限公司 | A kind of backboard and preparation method thereof, backlight module and display device |
CN108598245A (en) * | 2018-07-04 | 2018-09-28 | 天津中环电子照明科技有限公司 | Reflective quantum dot LED packagings and lamps and lanterns |
CN108615722A (en) * | 2018-04-28 | 2018-10-02 | 安徽芯瑞达科技股份有限公司 | A kind of backlight module blue chip, the high colour gamut LED lamp bead of green light chip |
CN108803141A (en) * | 2018-06-21 | 2018-11-13 | 惠州市华星光电技术有限公司 | Quantum dot integrates optical module, backlight module and liquid crystal display |
CN208384304U (en) * | 2018-06-25 | 2019-01-15 | 惠州市创亿达新材料有限公司 | High colour gamut display module framework |
CN109343271A (en) * | 2018-11-13 | 2019-02-15 | 惠州市华星光电技术有限公司 | Backlight module and liquid crystal display |
CN209447794U (en) * | 2019-02-18 | 2019-09-27 | 南通创亿达新材料股份有限公司 | High colour gamut quantum dot lamp bar and backlight module |
-
2019
- 2019-02-18 CN CN201910120668.2A patent/CN109830475A/en active Pending
Patent Citations (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201716944U (en) * | 2009-12-15 | 2011-01-19 | 康佳集团股份有限公司 | Led display device and television |
CN201787434U (en) * | 2010-07-27 | 2011-04-06 | 康佳集团股份有限公司 | Backlight source device and liquid crystal display |
KR20130043294A (en) * | 2011-10-20 | 2013-04-30 | 엘지디스플레이 주식회사 | Led pakage and method of fabricating the same |
CN105301841A (en) * | 2015-11-23 | 2016-02-03 | 青岛海信电器股份有限公司 | Backlight module and liquid crystal display equipment |
CN105372878A (en) * | 2015-12-04 | 2016-03-02 | 青岛海信电器股份有限公司 | Quantum dot luminescent device, backlight module and display device |
CN106383420A (en) * | 2016-08-31 | 2017-02-08 | 张家港康得新光电材料有限公司 | Quantum dot luminous device and backlight module |
WO2018099081A1 (en) * | 2016-11-30 | 2018-06-07 | 深圳市聚飞光电股份有限公司 | Method for packaging led lamp bead based on quantum dot fluorescent film |
CN206497278U (en) * | 2017-02-23 | 2017-09-15 | 常州华威新材料有限公司 | A kind of quantum dot display device |
CN206878027U (en) * | 2017-03-20 | 2018-01-12 | 武汉保丽量彩科技有限公司 | A kind of new high colour gamut luminescent device |
CN107329201A (en) * | 2017-07-03 | 2017-11-07 | 深圳Tcl新技术有限公司 | Side entrance back module and display device |
CN107706289A (en) * | 2017-11-07 | 2018-02-16 | 青岛海信电器股份有限公司 | Quantum dot LED and preparation method thereof |
CN108110120A (en) * | 2017-12-08 | 2018-06-01 | 青岛海信电器股份有限公司 | Quantum dot LED and display device |
CN108445664A (en) * | 2018-03-30 | 2018-08-24 | 京东方科技集团股份有限公司 | A kind of backboard and preparation method thereof, backlight module and display device |
CN108615722A (en) * | 2018-04-28 | 2018-10-02 | 安徽芯瑞达科技股份有限公司 | A kind of backlight module blue chip, the high colour gamut LED lamp bead of green light chip |
CN108803141A (en) * | 2018-06-21 | 2018-11-13 | 惠州市华星光电技术有限公司 | Quantum dot integrates optical module, backlight module and liquid crystal display |
CN208384304U (en) * | 2018-06-25 | 2019-01-15 | 惠州市创亿达新材料有限公司 | High colour gamut display module framework |
CN108598245A (en) * | 2018-07-04 | 2018-09-28 | 天津中环电子照明科技有限公司 | Reflective quantum dot LED packagings and lamps and lanterns |
CN109343271A (en) * | 2018-11-13 | 2019-02-15 | 惠州市华星光电技术有限公司 | Backlight module and liquid crystal display |
CN209447794U (en) * | 2019-02-18 | 2019-09-27 | 南通创亿达新材料股份有限公司 | High colour gamut quantum dot lamp bar and backlight module |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113689784A (en) * | 2021-09-01 | 2021-11-23 | 广东瑞捷光电股份有限公司 | High-brightness quantum dot diffusion plate structure and manufacturing process thereof |
CN113851470A (en) * | 2021-09-24 | 2021-12-28 | 盐城东山精密制造有限公司 | Novel high-color-gamut LED lamp panel and quantum film attaching method thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107017325B (en) | Quantum dot composite material and manufacturing method and application thereof | |
CN110858599B (en) | Pixel array packaging structure and display panel | |
JP4767243B2 (en) | White light source, backlight unit and LCD display | |
TWI690750B (en) | Quantum dot display device | |
TWI680178B (en) | Quantum dot material and manufacturing method thereof | |
US20140361317A1 (en) | Solid state lighting component package with reflective layer | |
CN209447794U (en) | High colour gamut quantum dot lamp bar and backlight module | |
TWI613275B (en) | Quantum dot composite material and manufacturing method and application thereof | |
CN102034917A (en) | Optical-semiconductor encapsulating material | |
TW201306325A (en) | White light emitting device, and display apparatus and illumination apparatus using the same | |
CN109830475A (en) | High colour gamut quantum dot lamp bar, preparation method and its backlight module | |
CN102282687B (en) | Led packaging enabling light emitting with uniform colors | |
CN104253121A (en) | Omnidirectional light-emitting diode device and packaging method thereof | |
KR20150066656A (en) | Sulfide phosphor, light emitting device package, backlight unit and its manufacturing method | |
US20140104874A1 (en) | Phosphor, light emitting device, surface light source device, display device and illumination device | |
KR20170073356A (en) | Phosphor, light emitting device having thereof and light unit having thereof | |
KR20200029900A (en) | Lighting module and lighting assemble having thereof | |
CN101684924B (en) | LED lighting module and preparation method | |
CN112106209B (en) | Lighting device | |
KR102019501B1 (en) | Phosphor and light emitting device having thereof | |
CN102270627A (en) | Packaging structure of light-emitting diode | |
CN201246684Y (en) | LED illumination module | |
CN105431941A (en) | Light emitting diode package with encapsulant having curved and planar surfaces | |
KR102035169B1 (en) | Phosphor compositions | |
CN102097571A (en) | Yellow/green light diode, backlight, mobile phone and illumination indicating device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |