CN107706289A - Quantum dot LED and preparation method thereof - Google Patents
Quantum dot LED and preparation method thereof Download PDFInfo
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- CN107706289A CN107706289A CN201711081559.1A CN201711081559A CN107706289A CN 107706289 A CN107706289 A CN 107706289A CN 201711081559 A CN201711081559 A CN 201711081559A CN 107706289 A CN107706289 A CN 107706289A
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 112
- 238000002360 preparation method Methods 0.000 title claims description 7
- 239000000463 material Substances 0.000 claims abstract description 63
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- 239000001301 oxygen Substances 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 229910052681 coesite Inorganic materials 0.000 claims description 9
- 229910052906 cristobalite Inorganic materials 0.000 claims description 9
- 238000000926 separation method Methods 0.000 claims description 9
- 229910052682 stishovite Inorganic materials 0.000 claims description 9
- 229910052905 tridymite Inorganic materials 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- 229910052593 corundum Inorganic materials 0.000 claims description 7
- 239000000741 silica gel Substances 0.000 claims description 7
- 229910002027 silica gel Inorganic materials 0.000 claims description 7
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 5
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 239000003292 glue Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 241001025261 Neoraja caerulea Species 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000012788 optical film Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 208000003464 asthenopia Diseases 0.000 description 1
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Inorganic materials [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of quantum dot LED, belong to LED light source technical field.The quantum dot LED includes：Support, the frame bottom are flat board, and surrounding upwardly extends to form middle cavity；The LED chip being fixed in the frame bottom, the LED chip are centrally located on the central shaft of support；Quantum dot layer, the quantum dot layer include red quantum dot material and green quanta point material；Wall, the wall is between quantum dot layer and the LED chip, quanta point material is avoided directly to be contacted with LED chip, make the LED chip spaced apart to the quantum dot layer, the maximum blue power that quanta point material receives directly over LED chip is reduced in the limit range of its blue light luminous power that can be born, the problem of avoiding position quantum point failure directly over LED, improve quantum dot LED life-span.
Description
Technical field
The present invention relates to LED light source technical field, is related to a kind of quantum dot LED and its manufacture method.
Background technology
Light emitting diode (light-emitting diode, LED) is a kind of New Solid light source, because with brightness it is high,
Light efficiency is high, radiation is low, long lifespan, pollution are small, without stroboscopic, do not allow to be also easy to produce depending on receiving much concern the advantages that visual fatigue, be to shine
Bright engineering, the focus of optoelectronic areas research.Wherein, white light LEDs as a new generation lighting source just progressively by people's
Concern, it is mainly used in the fields such as interior and road lighting, display screen and display light source, lamps for vehicle and decoration.
Business quanta point material is influenceed that its failure, the blue light light that quantum dot can be born can be caused by high temperature and oxygen at present
Power limit is typically in 5W/cm2Hereinafter, it is in 2W/cm to recommend normal use2Below.Therefore the utilization of currently commercially quantum dot
All need to protect quanta point material.Quantum dot backlight technology has chip package (On-Chip), light-metering encapsulation (On-Edge), optical film
Integrated (On-Surface) three kinds of main implementations.The form of the integrated corresponding quantum dot diaphragm (QD-film) of optical film, leads to
PET is crossed to be encapsulated quanta point material；Corresponding quantum bar (QD-rail) form of light-metering encapsulation, is encapsulated using hollow glass tube
Quanta point material；Quantum dot diaphragm needs to use more quanta point material, and the limitation of the lighting angle of quantum bar, result in
, it is necessary to which substantial amounts of quantum bar, does not meet economic benefit if the backlight of display field uses quantum dot.
In chip encapsulation technology, quantum dot is directly placed above LED chip, this form most saves quantum dot material
Material.The blue power limit that quanta point material can be born is in 5W/cm2Under, but the distribution of the optical cavity of LED chip is in lambertian distribution,
Shooting angle is smaller, and unit area and luminous power are higher.Quanta point material directly over LED chip is more susceptible to the photograph of high intensity
Penetrate, this distance can make quantum dot by peak 60W/cm2~100W/cm2Blue light luminous power irradiation.Cause LED chip
The quantum point failure at surface position.
The content of the invention
The invention provides a kind of quantum dot LED and its manufacture method, by between LED chip and quantum dot wealth material
Wall is set, LED chip and quanta point material are separated, solves the unit area maximum that LED chip is radiated at quantum dot layer
The problem of luminous power is excessive, the crash rate of quanta point material is reduced, improve quantum dot LED service life.The technology of the present invention side
Case is as follows：
Embodiments of the present invention provide quantum dot LED.Including support, surrounding upwardly extends to form middle cavity；It is fixed
In the LED chip in frame bottom, the LED chip is centrally located on the central shaft of support；Quantum dot layer, the quantum dot
Layer includes red quantum dot material and green quanta point material；Wall, the wall are located at quantum dot layer and the LED core
Between piece, the whole frame bottom and the LED chip are covered, upper surface is parallel to frame bottom, in the wall
Thickness meets h >=0.03mm at the heart.
Further, the material of the wall includes at least one of epoxy resin and silica gel.
Further, water oxygen separation layer is set in the light emission side of the quantum dot layer, for make the quantum dot layer with it is outer
Boundary isolates.
Further, the main component of the water oxygen separation layer includes Al2O3And SiO2At least one.
Further, the green quantum dot material-wavelength scope is 520nm~550nm, the red quantum dot material
Wave-length coverage is 610nm~650nm.
A kind of preparation method for quantum dot LED that the present invention also provides, comprises the following steps：Mould is controlled, by support bottom
Flat board is made in portion, and surrounding upwardly extends to form middle cavity；LED chip is weldingly fixed on frame bottom；Utilize mode for dispensing glue
Silica gel is covered in LED chip and frame bottom, forms wall；Wall is toasted to solidify；By quanta point material dispensing,
It is arranged on above the wall, forms quantum dot layer；Quantum dot layer is toasted to solidify.
Further, water oxygen barrier layer is sputtered on the quantum dot layer surface in the mode using magnetron sputtering.
Further, the material of water oxygen barrier layer includes Al2O3And SiO2At least one.
Further, quantum dot layer includes red quantum dot material and green quanta point material, red quantum dot material ripple
Long scope is 610nm~650nm, and green quantum dot material-wavelength scope is 520nm~550nm.
Compared with prior art, the advantageous effects for the technical scheme that the embodiment of the present application is proposed include：
The invention provides a kind of quantum dot LED, including support, the bottom of the support is flat board, and surrounding upwardly extends
Cavity in formation；The LED chip being fixed in the frame bottom, the LED chip are centrally located on the central shaft of support；
Quantum dot layer, the quantum dot layer include red quantum dot material and green quanta point material；Wall, the wall are located at
Between quantum dot layer and the LED chip, the whole frame bottom and the LED chip are covered, upper surface is parallel to described
Frame bottom, surrounding are agreed with cradle wall.By thickness limit scope at the center to wall, avoid quanta point material with
LED chip directly contacts, and makes the maximum blue light luminous power that quanta point material receives in the limit of its blue light luminous power that can be born
In the range of, the problem of avoiding position quantum point failure directly over LED, improve quantum dot LED life-span.
Brief description of the drawings
In order to illustrate more clearly of embodiment of the present invention, the required accompanying drawing used in being described below to embodiment
It is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for this area
For those of ordinary skill, on the premise of not paying creative work, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is the quantum dot LED of the embodiment of the present invention one structural representation；
Fig. 2 is the quantum dot LED of the embodiment of the present invention one functional diagram；
Fig. 3 is the quantum dot LED of the embodiment of the present invention two structural representation；
Fig. 4 is the quantum dot LED of the embodiment of the present invention two functional diagram；
Fig. 5 is the flow chart of the first embodiment of quantum dot LED manufacture methods of the present invention.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one：
Fig. 1 is the quantum dot LED of the embodiment of the present invention one, as shown in figure 1, a kind of quantum dot LED includes support 110, branch
Frame bottom 111 is flat board, and surrounding upwardly extends to form middle cavity, and its key property has the high reflectivity of total visible light wave band,
The characteristic such as resistance to blue ray radiation and high temperature resistant, can be EMC the or PC materials of specially treated.Generally, centered on support
Symmetric form, central shaft are located at the geometric center of support.LED chip 120 is generally blue chip, can send 400nm~480nm's
Blue light.LED chip 120 is centrally located on the central shaft of support 110.Wall 130 covers whole frame bottom 111 and LED
Chip 120, upper surface are closely agreed with parallel to frame bottom 111, surrounding with support 110.Quantum dot layer is covered above interval
140, quantum dot layer 140 includes red quantum dot material and green quanta point material.The blue light sent for LED chip 120 exists
Quantum dot layer excites to form mixed white light.
To delay the working life of red green quantum dot in quantum dot layer 140, water oxygen is obstructed to quanta point material from top
Destruction, ensure its validity.In the top of quantum dot layer 140, water oxygen separation layer 150 is set.
Because quantum dot layer produces amount of heat in excitation process, temperature is higher, so wall should select translucency
Good, resistant to elevated temperatures material.Preferably, the material of wall includes at least one of silica gel and epoxy resin.
The main component of the water oxygen separation layer includes Al2O3And SiO2At least one.
Optionally, the green quantum dot material-wavelength scope is 520nm~550nm, the red quantum dot material ripple
Long scope is 610nm~650nm.
If Fig. 2 is the quantum dot LED function figure of the embodiment of the present invention one, interval is placed on quantum dot layer 140 and LED chip
Between 120, the two is set to keep certain distance h.
According to the light extraction lambertian distribution of LED chip, under different distance, the maximum blue light of common blue-ray LED unit area is strong
Degree and the relation of the ultimate range from LED chip, close to following relational expression：
Y=a (0.0338h4-0.5712h3+3.6895h2-11.213h+14.77)
Wherein y is the blue light energy that the LED chip that the quanta point material of unit area receives is sent, and h is quantum dot layer
With LED chip distance.Wherein a=Pe/0.55, Pe are the luminous power for the LED chip selected.
Using the blue power that quantum dot can be born as 5W/cm2, the blue light light work(of quantum dot LED chip outgoing of the invention
Rate Pe and the distance h of LED chip to quantum dot layer need to meet that relation is：Then
Pe in general use ranges are：20mW~1800mW.In general, LED thickness is thinner, and light extraction efficiency is higher.
The minimum range for meeting reliability thus is taken, corresponding h span is generally：h≥0.03mm.
Optionally, it is 0.03mm to choose thickness at wall center, brings above-mentioned formula into, and now, quanta point material receives
Maximum blue light luminous power be 0.2W, the limiting value for the blue light luminous power that can be born less than quanta point material, it is ensured that quantum dot
LED reliability.
The interval of the embodiment of the present invention one is placed between quantum dot layer 140 and LED chip 120, avoids quanta point material
Directly contacted with LED chip, make the LED chip to being separated with certain distance between the quantum dot layer, and reduce LED chip just
The maximum blue power that top quanta point material receives avoids LED in the limit range of its blue light luminous power that can be born
The problem of surface position quantum point failure, improve quantum dot LED life-span.
Embodiment two：
Fig. 3 is the quantum dot LED of the embodiment of the present invention two, as shown in figure 1, a kind of quantum dot LED includes support 210, branch
Frame bottom 211 is flat board, and surrounding upwardly extends to form middle cavity, and its key property has the high reflectivity of total visible light wave band,
The characteristic such as resistance to blue ray radiation and high temperature resistant, can be EMC the or PC materials of specially treated.Generally, centered on support
Symmetric form, central shaft are located at the geometric center of support.LED chip 220 is generally blue chip, can send 400nm~480nm's
Blue light.LED chip 220 is centrally located on the central shaft of support 210.Wall 230 covers whole frame bottom 211 and LED
Chip 220, upper surface are closely agreed with parallel to frame bottom 211, surrounding with support 210.Quantum dot layer is covered above interval
240, quantum dot layer 240 includes red quantum dot material and green quanta point material.The blue light sent for LED chip 220 exists
Quantum dot layer excites to form mixed white light.
In order that Integral luminous is uniform, reduce light extraction luminous power directly over LED chip, in wall 230 and quantum dot layer
Scattering layer 260 is set between 240, and the material of the scattering layer is SiO2、CaCO3、TiO2、BaSO4At least one it is micro- with glass
The mixture of pearl material.
To avoid quanta point material from directly being contacted with LED chip, between LED chip and quantum dot layer fill wall and
Scattering layer, the LED chip is set to be received to certain distance h, LED chip surface quanta point material is separated between the quantum dot layer
Maximum blue power be reduced in the limit range of its blue light luminous power that can be born, corresponding h span is generally：
h≥0.03mm。
Optionally, because quantum dot layer produces amount of heat in excitation process, temperature is higher, so wall should be selected
Translucency is good, resistant to elevated temperatures material.Preferably, the material of wall includes at least one of epoxy resin or silica gel.
Optionally, the main component of the water oxygen separation layer includes Al2O3And SiO2At least one.
Optionally, the green quantum dot material-wavelength scope is 520nm~550nm, the red quantum dot material ripple
Long scope is 610nm~650nm.
Embodiment three：
Fig. 5 is the flow chart of the first embodiment of quantum dot LED manufacture methods of the present invention, for quantum dot LED of the present invention
The first embodiment of manufacture method, step S101, using resistance to blue ray radiation, high temperature resistant, full visible waveband high reflectivity EMC or
PC is material, frame bottom is made into flat board, surrounding upwardly extends to form middle cavity；Frame bottom is integrally formed with surrounding.Step
Rapid S102, LED chip is weldingly fixed on frame bottom, LED chip is centrally located on the central shaft of support；Step S103,
Silica gel or epoxy resin are covered in LED chip and frame bottom using mode for dispensing glue, form wall；Step S104,
Wall is toasted to solidify；Step S105, quanta point material dispensing is arranged on above the wall, forms quantum dot layer；
Step S106, quantum dot layer is toasted to solidify；Step S107, by way of sputtering or being deposited, water oxygen separation layer is set
Above quantum dot layer, the destruction from top barrier moisture and oxygen to quanta point material.Optionally, water oxygen separation layer is main
Composition includes Al2O3And SiO2At least one.
The better embodiment of the present invention is the foregoing is only, is not intended to limit the invention, all spirit in the present invention
Within principle, any modification, equivalent substitution and improvements made etc., it should be included in the scope of the protection.
Claims (9)
1. a kind of quantum dot LED, including it is characterised in that it includes
Support, cavity in formation；
The LED chip being fixed in the frame bottom, the LED chip are centrally located on the central shaft of support；
Quantum dot layer, the quantum dot layer include red quantum dot material and green quanta point material；
Wall, the wall between the quantum dot layer and the LED chip, cover the whole frame bottom and
The LED chip, surrounding are agreed with the cradle wall, and thickness meets at the center of the wallh≥0.03mm。
2. the quantum dot LED according to claim 1, it is characterised in that the material of the wall include epoxy resin and
At least one of silica gel.
3. quantum dot LED according to claim 2, it is characterised in that water oxygen is set in the light emission side of the quantum dot layer
Separation layer, for making the quantum dot layer be isolated from the outside.
4. quantum dot LED according to claim 3, it is characterised in that the main component of the water oxygen separation layer includes
Al2O3And SiO2At least one.
5. quantum dot LED according to claim 4, it is characterised in that the green quantum dot material-wavelength scope is 520
The nm of nm ~ 550, the red quantum dot material wave-length coverage are the nm of 610 nm ~ 650.
6. a kind of quantum dot LED preparation method, it is characterised in that comprise the following steps：
Mould is controlled, flat board is made in frame bottom, surrounding upwardly extends to form middle cavity；
LED chip is weldingly fixed on frame bottom；
Silica gel is covered in LED chip and frame bottom using mode for dispensing glue, forms wall；
Wall is toasted to solidify；
Quanta point material dispensing is arranged on above the wall, forms quantum dot layer；
Quantum dot layer is toasted to solidify.
7. preparation method according to claim 6, it is characterised in that further comprising the steps of：Utilize the side of magnetron sputtering
Formula sputters water oxygen barrier layer on the quantum dot layer surface.
8. preparation method according to claim 7, it is characterised in that the material of the water oxygen barrier layer includes Al2O3With
SiO2At least one.
9. preparation method according to claim 8, it is characterised in that the quantum dot layer include red quantum dot material and
Green quanta point material, red quantum dot material wave-length coverage are the nm of 610 nm ~ 650, green quantum dot material-wavelength scope
For the nm of 520 nm ~ 550.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711081559.1A CN107706289B (en) | 2017-11-07 | 2017-11-07 | Quantum dot LED and preparation method thereof |
| PCT/CN2018/090063 WO2019091107A1 (en) | 2017-11-07 | 2018-06-06 | Quantum dot led, manufacturing method therefor and display device |
| US16/673,830 US11508882B2 (en) | 2017-11-07 | 2019-11-04 | Quantum dot LED, manufacturing method thereof and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711081559.1A CN107706289B (en) | 2017-11-07 | 2017-11-07 | Quantum dot LED and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107706289A true CN107706289A (en) | 2018-02-16 |
| CN107706289B CN107706289B (en) | 2019-08-20 |
Family
ID=61178221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711081559.1A Active CN107706289B (en) | 2017-11-07 | 2017-11-07 | Quantum dot LED and preparation method thereof |
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| Country | Link |
|---|---|
| CN (1) | CN107706289B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108548105A (en) * | 2018-04-27 | 2018-09-18 | 南昌大学 | A kind of yellow light LED encapsulating structure and packaging method |
| WO2019091107A1 (en) * | 2017-11-07 | 2019-05-16 | 青岛海信电器股份有限公司 | Quantum dot led, manufacturing method therefor and display device |
| CN109830475A (en) * | 2019-02-18 | 2019-05-31 | 南通创亿达新材料股份有限公司 | High colour gamut quantum dot lamp bar, preparation method and its backlight module |
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| CN103456865A (en) * | 2013-09-03 | 2013-12-18 | 易美芯光（北京）科技有限公司 | LED package |
| CN205452347U (en) * | 2015-09-29 | 2016-08-10 | 易美芯光（北京）科技有限公司 | Support type quantum dot LED packaging structure |
| CN106098906A (en) * | 2016-06-13 | 2016-11-09 | 青岛海信电器股份有限公司 | Quantum dot light emitting device packaging part, backlight module and liquid crystal indicator |
| CN106299075A (en) * | 2015-05-18 | 2017-01-04 | 青岛海信电器股份有限公司 | A kind of quantum dot light emitting element, backlight module and display device |
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2017
- 2017-11-07 CN CN201711081559.1A patent/CN107706289B/en active Active
Patent Citations (4)
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| CN103456865A (en) * | 2013-09-03 | 2013-12-18 | 易美芯光（北京）科技有限公司 | LED package |
| CN106299075A (en) * | 2015-05-18 | 2017-01-04 | 青岛海信电器股份有限公司 | A kind of quantum dot light emitting element, backlight module and display device |
| CN205452347U (en) * | 2015-09-29 | 2016-08-10 | 易美芯光（北京）科技有限公司 | Support type quantum dot LED packaging structure |
| CN106098906A (en) * | 2016-06-13 | 2016-11-09 | 青岛海信电器股份有限公司 | Quantum dot light emitting device packaging part, backlight module and liquid crystal indicator |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019091107A1 (en) * | 2017-11-07 | 2019-05-16 | 青岛海信电器股份有限公司 | Quantum dot led, manufacturing method therefor and display device |
| US11508882B2 (en) | 2017-11-07 | 2022-11-22 | Hisense Visual Technology Co., Ltd. | Quantum dot LED, manufacturing method thereof and display device |
| CN108548105A (en) * | 2018-04-27 | 2018-09-18 | 南昌大学 | A kind of yellow light LED encapsulating structure and packaging method |
| CN109830475A (en) * | 2019-02-18 | 2019-05-31 | 南通创亿达新材料股份有限公司 | High colour gamut quantum dot lamp bar, preparation method and its backlight module |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107706289B (en) | 2019-08-20 |
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Address after: 266100 Zhuzhou Road, Laoshan District, Shandong, No. 151, No. Patentee after: Hisense Visual Technology Co., Ltd. Address before: 266100 Zhuzhou Road, Laoshan District, Shandong, No. 151, No. Patentee before: QINGDAO HISENSE ELECTRONICS Co.,Ltd. |