KR20130043294A - Led pakage and method of fabricating the same - Google Patents

Led pakage and method of fabricating the same Download PDF

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Publication number
KR20130043294A
KR20130043294A KR1020110107311A KR20110107311A KR20130043294A KR 20130043294 A KR20130043294 A KR 20130043294A KR 1020110107311 A KR1020110107311 A KR 1020110107311A KR 20110107311 A KR20110107311 A KR 20110107311A KR 20130043294 A KR20130043294 A KR 20130043294A
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KR
South Korea
Prior art keywords
protective layer
light
led chip
quantum dots
conversion layer
Prior art date
Application number
KR1020110107311A
Other languages
Korean (ko)
Inventor
윤경진
이정애
김경찬
이경훈
박중필
지문배
조성희
노효진
장경국
정경석
Original Assignee
엘지디스플레이 주식회사
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Priority to KR1020110107311A priority Critical patent/KR20130043294A/en
Publication of KR20130043294A publication Critical patent/KR20130043294A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

PURPOSE: An LED package and a manufacturing method thereof are provided to prevent the deterioration of a quantum dot by forming a first protection layer between an LED chip and a photoelectric conversion layer. CONSTITUTION: An LED chip(200) is formed on a substrate. A first protection layer(400) covers the LED chip. A photoelectric conversion layer is formed on the first protection layer. The photoelectric conversion layer includes a quantum dot. A second protection layer(500) is formed on the photoelectric conversion layer.

Description

LED package and manufacturing method thereof {LED PAKAGE AND METHOD OF FABRICATING THE SAME}

The present invention relates to an LED package, and more particularly, to an LED package and a method for manufacturing the same, which can secure stability by preventing moisture and oxygen from flowing into the LED package.

As the information society develops, the demand for display devices is increasing in various forms. In response to this, various flat panel display devices such as liquid crystal display device (LCD), plasma display panel (PDP), electro luminescent display (ELD), and vacuum fluorescent display (VFD) have been studied. It is used as a display device.

Among them, the liquid crystal display is the most widely used, replacing the CRT (Cathode Ray Tube) for mobile image display because of its excellent image quality, light weight, thinness, and low power consumption. In addition to the mobile use, such as a variety of TV and computer monitors that receive and display broadcast signals have been developed.

The liquid crystal display as described above has a structure in which a liquid crystal is filled between the upper substrate and the lower substrate. The liquid crystal molecules are thin and long in structure and have directivity in the arrangement. When an electric field is applied to the liquid crystal layer, the alignment direction of the liquid crystal molecules can be adjusted. The liquid crystal molecules are moved by the electric field applied to the liquid crystal layer, and the light transmittance is changed so that images or characters Is expressed. Such liquid crystal display devices have been spotlighted as next generation advanced display devices due to their excellent image quality, light weight, and low power consumption.

Meanwhile, since the liquid crystal display does not emit light by itself, the liquid crystal display includes a backlight unit that provides light passing through the liquid crystal layer under the liquid crystal display. In general, the backlight unit uses EL (Electro Luminescence), LED (Light Emitting Diode), CCFL (Cold Cathode Fluorescent Lamp), HCFL (Hot Cathode Fluorescent Lamp), External Electroluminescent Lamp (EEFL).

In particular, LEDs include gallium nitride (GaN), gallium arsenide (GaAs), gallium phosphide (GaP), gallium-arsenide-phosphorus (GaAs1-xPx), gallium-aluminum-arsenic (Ga1-xAlxAs), and indium phosphide (InP) , A compound semiconductor composed of indium-gallium-phosphorus (In1-xGaxP) and the like, and has low brightness, low voltage, long life and low cost, and have recently developed industrial technologies, especially information display technology and semiconductor technology. With the development, the application range has been extended to the field of flat panel display (FPD), and it is expected to continue to develop as an independent information display device in the future.

1 is a cross-sectional view of a typical LED package, showing the LED package emitting white color.

As shown in FIG. 1, the LED package includes a substrate 10, an LED chip 20 formed on the substrate 10, and a light conversion layer formed to cover the LED chip 20. The LED chip 200 is one of light emitting devices that emit light when a current is applied. The LED chip 200 is connected to an electrode terminal (not shown) formed on the substrate 10 through a wire to convert electricity into light using characteristics of the compound semiconductor. Convert.

For example, when the LED chip 20 emits blue light, the light conversion layer is mixed with the red quantum dot 30b and the green quantum dot 30c in the resin 30a, and thus the blue light emitted from the LED chip 20. The light and the red light and the green light emitted from the red quantum dot 30b and the green quantum dot 30c may be mixed to emit white light. However, in the above case, oxygen and moisture are introduced into the upper surface of the light conversion layer, and the introduced oxygen and moisture oxidize the red and green quantum dots 30b and 30c, thereby reducing the reliability of the LED package.

In addition, when the red and green quantum dots 30b and 30c are in direct contact with the LED chip 20 and the wires, the LED chip 20 and the wires are oxidized by the red and green quantum dots 30b and 30c to emit light intensity. Or a change in the wavelength of the LED chip occurs, thereby degrading color reproducibility.

The present invention has been made to solve the above problems, an object of the present invention is to provide a LED package and a method of manufacturing the same that can form a protective layer on the light conversion layer, to prevent the inflow of oxygen and moisture.

LED package of the present invention for achieving the above object, the LED chip formed on the substrate; A first protective layer formed to cover the LED chip; An optical conversion layer formed on the first protective layer and including a quantum dot; And two protective layers formed on the light conversion layer to prevent water or oxygen from entering the light conversion layer.

The light conversion layer has a structure in which the quantum dots are mixed with a heat or UV curable resin.

The LED chip emits blue light, and the quantum dots include red quantum dots emitting red light and green quantum dots emitting green light.

The LED chip emits UV light, and the quantum dots include red quantum dots emitting red light, green quantum dots emitting green light, and blue quantum dots emitting blue light.

The first protective layer is formed of a material selected from thermal or UV curable resins, polysilazane and nanoclay compounds.

The second protective layer is formed of polysilazane or nanoclay mixture.

In addition, the manufacturing method of the LED package of the present invention for achieving the same object, forming an LED chip on a substrate; Forming a first protective layer to cover the LED chip; Forming a light conversion layer including a quantum dot on the first protective layer; And forming a second protective layer on the light conversion layer to prevent water or oxygen from entering the light conversion layer.

The first protective layer, the light conversion layer and the second protective layer are formed using a solution processing method.

The first protective layer is formed by applying a material selected from resin, polysilazane and nanoclay compound on the substrate to cover the LED chip, and then curing it using heat or UV.

The light conversion layer is formed by applying a mixture of the quantum dots mixed with a resin selected from silicone-based, epoxy-based, acryl-based, and urethane-based resins on the first protective layer, and curing the same using heat or UV.

The second protective layer is formed by applying a polysilazane or nanoclay mixture on the second protective layer and then curing it using heat or UV.

The LED package of the present invention as described above and a manufacturing method thereof have the following effects.

First, by forming a first protective layer between the LED chip and the light conversion layer, it is possible to prevent the quantum dot is in direct contact with the LED chip and wire to prevent degradation of the quantum dot and oxidation of the LED chip, wire, and the like. The protective layer distributes the light generated from the LED chip, so that the light generated from the LED chip is uniformly incident to the light conversion layer.

Second, by forming a second protective layer on the light conversion layer, it is possible to prevent oxygen and moisture from flowing into the LED package to improve the reliability of the LED package.

1 is a cross-sectional view of a typical LED package.
2 is a cross-sectional view of the LED package of the present invention.
3A to 3D are cross-sectional views illustrating a method of manufacturing the LED package of the present invention.

Hereinafter, with reference to the accompanying drawings will be described in detail the LED package and a manufacturing method of the present invention.

2 is a cross-sectional view of the LED package of the present invention, showing the LED package emitting white color.

As shown in FIG. 2, the LED package of the present invention includes the LED chip 200 formed on the substrate 100, the first protective layer 400 and the first protective layer 400 formed to cover the LED chip 200. And a second protective layer 500 formed on the light conversion layer in which the quantum dots 300b and 300c are mixed with the resin 300a and on the light conversion layer to prevent water and oxygen from entering the light conversion layer. ).

The substrate 100 is a silicon substrate, a metal substrate, a ceramic substrate, a resin substrate, or the like, and grooves are formed in the upper surface of the substrate 100. Then, the LED chip 200 is formed on the bottom of the groove. Although not shown, the LED chip 200 includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer between the n-type semiconductor layer and the p-type semiconductor layer. The n-type semiconductor layer and the p-type semiconductor layer are connected to an electrode terminal (not shown) formed on the substrate 100 through a wire, and when a voltage is applied, a current flows between the n-type semiconductor layer and the p-type semiconductor layer. Light is generated in the active layer.

In particular, the LED chip 200 may generate light of various wavelengths as needed, and the light conversion layer formed to cover the LED chip 200 converts the light generated from the LED chip 200 into light of a specific wavelength. To emit light of a desired wavelength. Specifically, the light conversion layer is formed of a structure in which quantum dots are mixed with silicon, epoxy, acrylic, and urethane resins 300a.

Quantum dots (QDs) are nano-sized semiconductor particles that emit unstable electrons as they descend from the conduction band to the valence band. The quantum dot is composed of a core, a shell, and a ligand. The quantum dot surrounds a core that emits light, and a shell formed on the surface of the core protects the core. In addition, the ligand formed on the surface of the shell to surround the shell serves to help the quantum dots to be dispersed in the resin. In this case, the quantum dots may consist only of the core and the shell.

Specifically, the core or shell may be cadmium selenide (CdSe), cadmium sulfide (CdS), cadmium telluride (CdTe), zinc selenide (ZnSe), zinc telluride (ZsTe), zinc sulfide (ZnS), mercuritride (HgTe) and the like. The ligand is an organic material selected from tri-normal octylphosphine (TOPO), oleic acid (OLEIC ACID), amine (AMINE) and the like.

In particular, the smaller the particles, the shorter the wavelength of light is generated, the larger the particles, the longer the wavelength of light is generated. Therefore, by controlling the size of the quantum dot to represent the visible light of the desired wavelength, it is also possible to implement a variety of colors at the same time by using quantum dots of different sizes.

The LED package of the present invention emits white light, and the LED chip 200 emits blue light or emits UV light. In the figure, the LED chip 200 emits blue light, and the light emitted from the LED chip 200 passes through the light conversion layer and is converted into white. When the LED chip 200 emits blue light, the light conversion layer preferably has a structure in which red and green quantum dots 300b and 300c are mixed with the resin 300a, and the LED chip 200 emits UV light. In this case, it is preferable that the light conversion layer has a structure in which red, green, and blue quantum dots 300b, 300c (not shown) are mixed with the resin 300a.

In addition, when the LED chip 200 emits blue light, the light conversion layer includes the first light conversion layer in which only the red quantum dots 300b are mixed with the resin and the second light conversion layer in which only the green quantum dots 300c are mixed with the resin. The stacking structure may be sequentially stacked, and the stacking order of the first and second light conversion layers may be changed. When the LED chip 200 emits UV, the light conversion layer may include a first light conversion layer in which only the red quantum dots 300b are mixed with the resin, a second light conversion layer in which only the green quantum dots 300c are mixed with the resin and Only the blue quantum dots (not shown) may have a structure in which the third light conversion layers mixed in the resin are sequentially stacked. In this case, the stacking order of the first, second and third light conversion layers may be changed.

In addition, the first protective layer 300 is formed between the LED chip 200 and the light conversion layer using a material such as resin, polysilazane, nanoclay mixture, or the like. At this time, the resin of the first protective layer 300 may be the resin 300a of the light conversion layer. The first protective layer 300 prevents the red and green quantum dots 300b and 300c from directly contacting the LED chip 200, thereby deteriorating the red and green quantum dots 300b and 300c and the LED chip 200 and the wire. It is possible to prevent the oxidation of the back, and evenly distribute the light emitted from the LED chip (200). Therefore, the first protective layer 300 is preferably formed to completely cover the LED chip 200.

As described above, oxygen and moisture are introduced into the upper surface of the light conversion layer, and the introduced oxygen and moisture oxidize the red and green quantum dots 300b and 300c to reduce the reliability of the LED package. Accordingly, the LED package of the present invention forms a second protective layer 500 on the light conversion layer, specifically, to cover the entire surface of the light conversion layer, thereby blocking moisture and oxygen that may flow into the LED package.

In this case, the second protective layer 500 is formed of a material having a transmittance of 90% or more so that the light generated from the LED chip 200 is emitted to the outside, and is formed of a material that is cured by heat or UV to prevent external oxygen and Moisture can be prevented from entering. In addition, it is preferable not to include a metal catalyst or an acidic solution so as not to damage the red and green quantum dots 300b and 300c of the light conversion layer below the second protective layer 500. Specifically, the second protective layer 500 is preferably formed of a material such as polysilazane, nano clay mixture, or the like.

In the LED package of the present invention as described above, the first protective layer 400 is formed between the LED chip 200 and the light conversion layer, so that the red and green quantum dots 300b and 300c of the light conversion layer are the LED chip 200. ) And direct contact with the wires, thereby preventing deterioration of the red and green quantum dots 300b and 300c and oxidation of the LED chip 200 and the wires. In addition, the first passivation layer 400 may disperse the light generated from the LED chip 200, and thus the light generated from the LED chip 200 may be uniformly incident to the light conversion layer to realize high purity white light. In addition, the second protective layer 500 formed on the light conversion layer may prevent oxygen and moisture from flowing into the LED package, thereby improving reliability of the LED package.

Hereinafter, with reference to the accompanying drawings, a method of manufacturing the LED package of the present invention in detail.

3A to 3D are cross-sectional views illustrating a method of manufacturing the LED package of the present invention.

First, as shown in FIG. 3A, the LED chip 200 is formed on the substrate 100. The LED chip 200 is formed at the bottom of the groove formed in the upper surface of the substrate 100, although not shown, the LED chip 200 is an n-type semiconductor layer, a p-type semiconductor layer and an n-type semiconductor layer and a p-type semiconductor It comprises an active layer between the layers. The n-type semiconductor layer and the p-type semiconductor layer are connected to an electrode terminal (not shown) formed on the substrate 100 through a wire, and when a voltage is applied, a current flows between the n-type semiconductor layer and the p-type semiconductor layer. Light is generated in the active layer.

Subsequently, as illustrated in FIG. 3B, the first protective layer 400 is formed to cover the LED chip 200. The first protective layer 400 is to prevent the quantum dots of the LED chip 200 and the light conversion layer to be described later in direct contact, the first protective layer 400 is silicon, epoxy, acrylic, urethane resin, poly It is formed of a material selected from polysilazane, Nanoclay Composites, and is cured by heat or UV.

Specifically, the first passivation layer 400 may include slit coating, spin coating, ink-jet printing, knife jetting, dispensing, etc. through a nozzle. It is formed in the same solution process (Solution Process) method. First, a material selected from a resin, polysilazane, and nanoclay mixture is completely coated on the substrate 100 to completely cover the LED chip 200, and then the first protective layer 400 is hardened by heat or UV. Form. Since the light conversion layer is formed on the first protective layer 400, in order to prevent the quantum dots of the light conversion layer from mixing with the first protective layer 400, it is preferable to completely harden the first protective layer 400. However, temporary curing is also possible.

 As shown in FIG. 3C, a light conversion layer having a structure in which a quantum dot and a resin 300a are mixed on the first protective layer 400 is formed. In detail, when the LED package of the present invention emits white light, the LED chip 200 emits blue light or UV, and in the drawing, the LED chip 200 emits blue light. In this case, it is preferable that the quantum dots of the light conversion layer are red and green quantum dots 300b and 300c. When the LED chip 200 emits UV, the quantum dots of the light conversion layer are red, green and blue quantum dots 300b and 300c. , Not shown).

Also, like the first passivation layer 400, the light conversion layer is coated with a mixture of red and green quantum dots 300b and 300c mixed with the resin 300a on the first passivation layer 400 by a solution process method. It is then formed by curing it with heat or UV. However, moisture and oxygen are introduced through the upper surface of the light conversion layer to oxidize the red and green quantum dots 300b and 300c, which may lower the reliability of the LED package. In order to prevent the inflow of water or oxygen to the phase, the second protective layer 500 is formed by using the above-described solution process method using a material such as polysilazane, nanoclay composites, or the like.

In particular, the second protective layer 500 is preferably formed of a material having a transmittance of 90% or more in order to emit white light generated in the light conversion layer to the outside. In addition, it is preferable not to include a metal catalyst or an acidic solution so as not to oxidize the red and green quantum dots 300b and 300c of the light conversion layer under the second protective layer 500.

While the present invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. Will be apparent to those of ordinary skill in the art.

100: substrate 200: LED chip
300a: Resin 300b: Red Quantum Dot
300c: green quantum dot 400: first protective layer
500: second protective layer

Claims (11)

An LED chip formed on the substrate;
A first protective layer formed to cover the LED chip;
An optical conversion layer formed on the first protective layer and including a quantum dot; And
Is formed on the light conversion layer, LED package, characterized in that it comprises a second protective layer to prevent the inflow of moisture or oxygen into the light conversion layer. The method of claim 1,
The light conversion layer is a LED package, characterized in that the structure of the quantum dots mixed with heat or UV curable resin. The method of claim 1,
Wherein the LED chip emits blue light, the quantum dots comprising red quantum dots emitting red light and green quantum dots emitting green light. The method of claim 1,
The LED chip emits UV light, wherein the quantum dots include red quantum dots emitting red light, green quantum dots emitting green light, and blue quantum dots emitting blue light. The method of claim 1,
The first protective layer is an LED package, characterized in that formed of a material selected from thermal or UV curable resin, poly silazane, nano clay compound. The method of claim 1,
The second protective layer is an LED package, characterized in that formed of polysilazane or nanoclay mixture. Forming an LED chip on the substrate;
Forming a first protective layer to cover the LED chip;
Forming a light conversion layer including a quantum dot on the first protective layer; And
Forming a protective layer on the light conversion layer to prevent the inflow of moisture or oxygen into the light conversion layer, characterized in that it comprises a LED package. The method of claim 7, wherein
The first protective layer, the light conversion layer and the second protective layer is a manufacturing method of the LED package, characterized in that formed using a solution process method. The method of claim 8,
The first protective layer is an LED package, characterized in that formed by applying a selected material of resin, poly silazane, nano clay compound on the substrate to cover the LED chip, and then curing it using heat or UV Method of preparation. The method of claim 8,
The light conversion layer is formed by applying a mixture of the quantum dots mixed with a resin selected from silicone-based, epoxy-based, acrylic-based, urethane-based resin on the first protective layer, and then curing it using heat or UV. The manufacturing method of the LED package. The method of claim 8,
The second protective layer is a method of manufacturing an LED package, characterized in that the polysilazane or nano clay mixture is applied to the second protective layer, and then formed by curing it using heat or UV.
KR1020110107311A 2011-10-20 2011-10-20 Led pakage and method of fabricating the same KR20130043294A (en)

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015089145A1 (en) * 2013-12-12 2015-06-18 Nanophotonica, Inc. A method and structure of promoting positive efficiency aging and stabilization of quantum dot light-emitting diode
US9447932B2 (en) 2014-02-05 2016-09-20 Samsung Display Co., Ltd. Light-emitting diode package and method of manufacturing the same
KR20160121134A (en) * 2015-04-10 2016-10-19 주식회사 엘지화학 Barrier film
US9887318B2 (en) 2013-10-17 2018-02-06 Nanophotonica Quantum dot for emitting light and method for synthesizing same
CN109065690A (en) * 2018-07-18 2018-12-21 易美芯光（北京）科技有限公司 A kind of quantum dot LED encapsulation structure
CN109830475A (en) * 2019-02-18 2019-05-31 南通创亿达新材料股份有限公司 High colour gamut quantum dot lamp bar, preparation method and its backlight module
KR102053614B1 (en) * 2018-06-19 2019-12-09 주식회사 네모엘텍 Quantum dot led lighting and manufacturing equipment
CN112103380A (en) * 2020-06-24 2020-12-18 佛山市国星光电股份有限公司 Quantum dot light-emitting device and manufacturing method thereof
US20210265538A1 (en) * 2018-07-20 2021-08-26 Najing Technology Corporation Limited Light emitting device and manufacturing method thereof

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9887318B2 (en) 2013-10-17 2018-02-06 Nanophotonica Quantum dot for emitting light and method for synthesizing same
US9780256B2 (en) 2013-12-12 2017-10-03 Nanophotonica Method and structure of promoting positive efficiency aging and stabilization of quantum dot light-emitting diode
WO2015089145A1 (en) * 2013-12-12 2015-06-18 Nanophotonica, Inc. A method and structure of promoting positive efficiency aging and stabilization of quantum dot light-emitting diode
US9447932B2 (en) 2014-02-05 2016-09-20 Samsung Display Co., Ltd. Light-emitting diode package and method of manufacturing the same
KR20160121134A (en) * 2015-04-10 2016-10-19 주식회사 엘지화학 Barrier film
KR101880210B1 (en) * 2015-04-10 2018-07-20 주식회사 엘지화학 Barrier film
KR102053614B1 (en) * 2018-06-19 2019-12-09 주식회사 네모엘텍 Quantum dot led lighting and manufacturing equipment
CN109065690A (en) * 2018-07-18 2018-12-21 易美芯光（北京）科技有限公司 A kind of quantum dot LED encapsulation structure
US20210265538A1 (en) * 2018-07-20 2021-08-26 Najing Technology Corporation Limited Light emitting device and manufacturing method thereof
US12015108B2 (en) * 2018-07-20 2024-06-18 Najing Technology Corporation Limited Light emitting device and manufacturing method thereof
CN109830475A (en) * 2019-02-18 2019-05-31 南通创亿达新材料股份有限公司 High colour gamut quantum dot lamp bar, preparation method and its backlight module
CN112103380A (en) * 2020-06-24 2020-12-18 佛山市国星光电股份有限公司 Quantum dot light-emitting device and manufacturing method thereof
CN112103380B (en) * 2020-06-24 2022-03-18 佛山市国星光电股份有限公司 Quantum dot light-emitting device and manufacturing method thereof

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