CN108615722A - A kind of backlight module blue chip, the high colour gamut LED lamp bead of green light chip - Google Patents
A kind of backlight module blue chip, the high colour gamut LED lamp bead of green light chip Download PDFInfo
- Publication number
- CN108615722A CN108615722A CN201810404562.0A CN201810404562A CN108615722A CN 108615722 A CN108615722 A CN 108615722A CN 201810404562 A CN201810404562 A CN 201810404562A CN 108615722 A CN108615722 A CN 108615722A
- Authority
- CN
- China
- Prior art keywords
- led
- quantum dot
- chip
- glue
- polystyrene
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Abstract
The present invention discloses a kind of backlight module blue chip, the high colour gamut LED lamp bead of green light chip, including LED support, LED blue chips, LED green light chips；The LED support upper surface setting is fluted, LED blue chips, LED green light chips is provided on the LED support of groove upper surface, LED support, LED blue chips, LED green light chips have been sequentially arranged above thermal insulation layer, quantum dot layer, separation layer；The thermal insulation layer is made of PS polystyrene or PS polystyrene glue；PS Polystyrene powders are put into groove, LED support is reheated, so that PS polystyrene is melted, or will be poured into groove after PS Polystyrene powder heating and meltings, thermal insulation layer is formed after the cooling of PS polystyrene；Or after mixing PS polystyrene with glue, the PS polystyrene glue of 10 30wt% is formed, PS polystyrene glue pours into groove, then forms thermal insulation layer after curing by 100 260 DEG C of 4 8h.The present invention has the characteristics that thermal stability is good, colour gamut is high, light loss is low, light efficiency is high, yield is high.
Description
Technical field
The present invention relates to a kind of backlight module blue chip, the high colour gamut LED lamp bead of green light chip, especially one kind has
Thermal stability is good, colour gamut is high, light loss is low, light efficiency is high, yield is high backlight module blue chip, the high colour gamut LED of green light chip
Lamp bead.
Background technology
Quantum dot (QuantumDot) be called it is nanocrystalline, be it is a kind of conduction band electron, valence band hole and exciton in three skies
Between the nanometer semiconductor structure that holds onto on direction, be usually made of II-VI group or iii-v element, grain size between 1~
Between 10nm, since electrons and holes are by quantum confinement, continuous band structure becomes the discrete energy levels knot with molecular characterization
Structure can emit fluorescence after being excited.Quantum dot fluorescence powder has wider absorption spectra and relatively narrow excitation spectrum, has more glimmering than tradition
Light powder, more excellent photoelectric properties, NTSC are up to 140%.By changing quantum dot particle size and chemical composition, hair can be made
It penetrates spectrum and covers entire visible light region.
Red, green fluorescence powder or yellow fluorescent powder are mixed with packaging plastic either in conventional method, then point is coated in LED
On blue chip 2, LED blue chips 2 send out blue light, blue light excitated fluorescent powder, and fluorescent powder sends out feux rouges, green light or yellow light, lead to
It crosses and photochromic is compounded to form white light LEDs；Or LED blue chips 2, LED green lights chip 3, three chip of LED red light chips are sent out respectively
Blue and green light, feux rouges mixing, formed white light；Or LED blue chips send out blue light, blue light excitation quantum point film, quantum
Point pipe, quantum dot film, quantum dot pipe inspire green light, feux rouges is mixed to form white light；Above-mentioned three kinds of LED lamp bead light mixing ways,
There are following various defects：
1. commercial fluorescent powder is mostly YAG powder or silicate, nitride phosphor, KSF fluorescent powders, β-at present
SiAlON, colour gamut are only capable of reaching 72%-93%；
2. the launching efficiency of fluorescent powder is low, improving colour gamut can only be realized by increasing dosage, far can not be met current
Requirement of the society to more low energy consumption, more high energy efficiency and higher colour gamut；
3. LED blue chips 2, LED green lights chip 3, LED red light chips mixed light are difficult, the light efficiency of three kinds of chips is different, and
There are also problems for heat dissipation, while driving control system is more complicated；
4. quantum dot film cost is higher, quantum dot tube capacity is broken, fails to popularize completely.
Invention content
The purpose of the present invention is to provide a kind of with thermal stability is good, colour gamut is high, light loss is low, light efficiency is high, yield is high
The high colour gamut LED lamp bead of backlight module blue chip, green light chip.
The purpose of the present invention can be achieved through the following technical solutions：
A kind of backlight module blue chip, the high colour gamut LED lamp bead of green light chip, including LED support, LED blue chips,
LED green lights chip, thermal insulation layer, quantum dot layer, separation layer；
LED support upper surface setting is fluted, be provided on the LED support of groove upper surface LED blue chips,
LED green light chips, LED support, LED blue chips, LED green light chips have been sequentially arranged above thermal insulation layer, quantum dot layer, isolation
Layer；
The LED blue chips, the LED green lights chip pass through the pad and LED support of gold thread or groove upper surface
Pad connects；
The thermal insulation layer is made of PS polystyrene or PS polystyrene glue；PS Polystyrene powders are put into groove
It is interior, LED support is reheated, so that PS polystyrene is melted, or will be poured into groove after PS Polystyrene powder heating and meltings, PS is poly-
Thermal insulation layer is formed after styrene cooling；Or after mixing PS polystyrene with glue, the PS polystyrene colloidals of 10-30wt% are formed
Water, PS polystyrene glue pour into groove, then form thermal insulation layer after curing by 100-260 DEG C of 4-8h；
The quantum dot layer is made of quantum dot powder and encapsulation glue, and encapsulation glue is the heat cure glue of two component of A, B,
It includes encapsulation glue A, encapsulation glue B to encapsulate glue；Encapsulation glue A is the catalyst for encapsulating glue B heat cures, encapsulation glue A
After encapsulation glue B is added, it is heating and curing；The material for encapsulating glue is one kind in organic silica gel or organic siliconresin；
The separation layer is Kapton, PET film, PET are the composite membrane of base material, PMMA films or polyvinyl alcohol
It is one or more in film；
The excitation wavelength of the quantum dot powder is 620-680nm, and the material of quantum dot powder is BaS, AgInS2、NaCl、
Fe2O3、In2O3、InAs、InN、InP、CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、GaAs、GaN、GaS、GaSe、InGaAs、
MgS、MgSe、MgTe、PbSe、PbTe、Cd(SxSe1-x)、BaTiO3、PbZrO3、CsPbCl3、CsPbBr3、CsPbI3In one kind
Or a variety of mixing；
The material of the LED support is a kind of in ceramics, PCT, EMC, SMC；
Contain an at least LED blue chip and LED green light chips in the lamp bead；The excitation wavelength of LED blue chips is
The excitation wavelength of 440-470nm, LED green light chip is 500-545nm；
The production method of the quantum dot layer, includes the following steps：
Step 1: in inert gas shielding environment, the quantum dot powder of 4-20 parts by weight is dissolved in having for 2-200 parts by weight
Solvent forms quantum dot solution；The organic solvent is n-hexane, hexamethylene, normal octane, toluene, dichlorotoleune, dichloromethane
One kind in alkane, chloroform, pyridine；
Step 2: above-mentioned quantum dot solution is added in encapsulation glue B, then encapsulation glue B is put into and is protected filled with inertia
The organic solvent in 50-160 DEG C of heating removal encapsulation glue B in the oven of gas, obtains quantum dot encapsulation glue B；
Step 3: in inert gas shielding environment, encapsulation glue A, stirring is added into above-mentioned quantum dot encapsulation glue B
After mixing, quantum dot encapsulation glue is obtained；
Step 4: in inert gas shielding environment, above-mentioned quantum dot encapsulation glue is added to the upper surface of thermal insulation layer,
After quantum dot packaging plastic flow is even, through under 60-180 DEG C of inert gas shielding, after solidification baking, forming quantum dot layer.
The present invention provides a kind of backlight module blue chip, the high colour gamut LED lamp beads of green light chip, have thermal stability
Feature good, colour gamut is high, light loss is low, light efficiency is high, yield is high.
Description of the drawings
In order to facilitate the understanding of those skilled in the art, the present invention will be further described below with reference to the drawings.
Fig. 1 be a kind of backlight module blue chip of the present invention, the high colour gamut LED lamp bead of green light chip backlight module.
Specific implementation mode
The purpose of the present invention can be achieved through the following technical solutions：
A kind of backlight module blue chip, the high colour gamut LED lamp bead of green light chip, referring to Fig. 1, including LED support 1, LED
Blue chip 2, LED green lights chip 3, thermal insulation layer 4, quantum dot layer 5, separation layer 6；
The setting of 1 upper surface of the LED support is fluted, and LED blue chips are provided on the LED support 1 of groove upper surface
2, LED green lights chip 3, LED support 1, LED blue chips 2, LED green lights chip 3 have been sequentially arranged above thermal insulation layer 4, quantum dot
Layer 5, separation layer 6；
The pad and LED support 1 that the LED blue chips 2, the LED green lights chip 3 pass through gold thread or groove upper surface
Pad connection；1 bottom of the LED support is welded in PCB circuit board, and PCB circuit board gives LED blue light cores by LED support 1
Piece 2, LED green lights chip 3 are powered；
The thermal insulation layer 4 is made of PS polystyrene or PS polystyrene glue；PS Polystyrene powders are put into recessed
In slot, LED support 1 is reheated, so that PS polystyrene is melted, or will be poured into groove after PS Polystyrene powder heating and meltings,
Thermal insulation layer 4 is formed after the cooling of PS polystyrene；Or after mixing PS polystyrene with glue, the PS polyphenyl of 10-30wt% is formed
Ethylene glue, PS polystyrene glue pour into groove, then form thermal insulation layer 4 after curing by 100-260 DEG C of 4-8h；
The quantum dot layer 5 is made of quantum dot powder and encapsulation glue, and encapsulation glue is the heat-curable glue of two component of A, B
Water, encapsulation glue include encapsulation glue A, encapsulation glue B；Encapsulation glue A is the catalyst for encapsulating glue B heat cures, packaging plastic
After encapsulation glue B is added in water A, it is heating and curing；The material for encapsulating glue is one kind in organic silica gel or organic siliconresin；
The separation layer 6 is Kapton, PET film, PET are the composite membrane of base material, PMMA films or polyethylene
It is one or more in alcohol film；
The excitation wavelength of the quantum dot powder is 620-680nm, and the material of quantum dot powder is BaS, AgInS2、NaCl、
Fe2O3、In2O3、InAs、InN、InP、CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、GaAs、GaN、GaS、GaSe、InGaAs、
MgS、MgSe、MgTe、PbSe、PbTe、Cd(SxSe1-x)、BaTiO3、PbZrO3、CsPbCl3、CsPbBr3、CsPbI3In one kind
Or a variety of mixing；
The material of the LED support 1 is a kind of in ceramics, PCT, EMC, SMC；
Contain an at least LED blue chip 2 and LED green lights chip 3 in the lamp bead；The excitation wavelength of LED blue chips 2
Excitation wavelength for 440-470nm, LED green lights chip 3 is 500-545nm；
The production method of the quantum dot layer 5, includes the following steps：
Step 1: in inert gas shielding environment, the quantum dot powder of 4-20 parts by weight is dissolved in having for 2-200 parts by weight
Solvent forms quantum dot solution；The organic solvent is n-hexane, hexamethylene, normal octane, toluene, dichlorotoleune, dichloromethane
One kind in alkane, chloroform, pyridine；
Step 2: above-mentioned quantum dot solution is added in encapsulation glue B, then encapsulation glue B is put into and is protected filled with inertia
The organic solvent in 50-160 DEG C of heating removal encapsulation glue B in the oven of gas, obtains quantum dot encapsulation glue B；
Step 3: in inert gas shielding environment, encapsulation glue A, stirring is added into above-mentioned quantum dot encapsulation glue B
After mixing, quantum dot encapsulation glue is obtained；
Step 4: in inert gas shielding environment, above-mentioned quantum dot encapsulation glue is added to the upper table of thermal insulation layer 4
Face, after quantum dot packaging plastic flow is even, through under 60-180 DEG C of inert gas shielding, after solidification baking, forming quantum dot layer 5.
The operation principle of the present invention：
Existing LED lamp bead is to mix red, green fluorescence powder or yellow fluorescent powder with packaging plastic, and then point is coated in blue light core
On piece is compounded to form white light LEDs by photochromic.
Red, green fluorescence powder or yellow fluorescent powder are mixed with packaging plastic either in conventional method, then point is coated in LED
On blue chip 2, LED blue chips 2 send out blue light, blue light excitated fluorescent powder, and fluorescent powder sends out feux rouges, green light or yellow light, lead to
It crosses and photochromic is compounded to form white light LEDs；Or LED blue chips 2, LED green lights chip 3, three chip of LED red light chips are sent out respectively
Blue and green light, feux rouges mixing, formed white light；Or LED blue chips send out blue light, blue light excitation quantum point film, quantum
Point pipe, quantum dot film, quantum dot pipe inspire green light, feux rouges is mixed to form white light；Above-mentioned three kinds of LED lamp bead light mixing ways,
There are following various defects：
1. commercial fluorescent powder is mostly YAG powder or silicate, nitride phosphor, KSF fluorescent powders, β-at present
SiAlON, colour gamut are only capable of reaching 72%-93%；
2. the launching efficiency of fluorescent powder is low, improving colour gamut can only be realized by increasing dosage, far can not be met current
Requirement of the society to more low energy consumption, more high energy efficiency and higher colour gamut；
3. LED blue chips 2, LED green lights chip 3, LED red light chips mixed light are difficult, the light efficiency of three kinds of chips is different, and
There are also problems for heat dissipation, while driving control system is more complicated；
4. quantum dot film cost is higher, quantum dot tube capacity is broken, fails to popularize completely.
The red quantum that the present invention is 620-680nm by LED blue chips 2, the collocation excitation wavelength of LED green lights chip 3
Point, while PS polystyrene thermal insulation layer 4 is added above LED blue chips 2, LED green lights chip 3, barrier LED blue chips 2,
3 work calories of LED green lights chip are conducted to quantum dot layer 5, and advantage is as follows：
1. the high colour gamut LED lamp bead obtained using LED blue chips 2, the collocation quantum dot of LED green lights chip 3, colour gamut are up to
100%-120%；
2. using LED blue chips 2, LED green lights chip 3 arrange in pairs or groups red quantum dot structure on than LED blue chip 2,
The structure of the mixed light lamp bead of LED green lights chip 3, LED red light chips is simple, is easier to realize in technique, promotes the yield of lamp bead；
3. conventional green emitting phosphor or green quantum dot are replaced using LED green lights chip 3, it not only can be to avoid green
Quantum dot and red quantum dot influence each other, while can also reduce the dosage of quantum dot, further improve quantum dot layer 5 and swash
The thermal stability of hair ability；
4. it is heat-insulated to add PS polystyrene between LED blue chips 2, LED green lights chip 3 and quantum dot, barrier LED is blue
The heat that optical chip 2, LED green lights chip 3 generate excites quantum dot the influence of ability.
The present invention provides a kind of backlight module blue chip, the high colour gamut LED lamp beads of green light chip, have thermal stability
Feature good, colour gamut is high, light loss is low, light efficiency is high, yield is high.
Above content is only to structure of the invention example and explanation, affiliated those skilled in the art couple
Described specific embodiment does various modifications or additions or substitutes by a similar method, without departing from invention
Structure or beyond the scope defined by this claim, is within the scope of protection of the invention.
Claims (5)
1. the high colour gamut LED lamp bead of a kind of backlight module blue chip, green light chip, including LED support (1), LED blue chips
(2), LED green lights chip (3), thermal insulation layer (4), quantum dot layer (5), separation layer (6), it is characterised in that；
LED support (1) the upper surface setting is fluted, and LED blue chips are provided on the LED support (1) of groove upper surface
(2), LED green lights chip (3), LED support (1), LED blue chips (2), LED green lights chip (3) have been sequentially arranged above heat-insulated
Layer (4), quantum dot layer (5), separation layer (6)；
The LED blue chips (2), the LED green lights chip (3) pass through gold thread or the pad and LED support of groove upper surface
(1) pad connection；
The thermal insulation layer (4) is made of PS polystyrene or PS polystyrene glue；PS Polystyrene powders are put into groove
It is interior, LED support (1) is reheated, so that PS polystyrene is melted, or will be poured into groove after PS Polystyrene powder heating and meltings,
Thermal insulation layer (4) is formed after the cooling of PS polystyrene；Or after mixing PS polystyrene with glue, the PS for forming 10-30wt% is poly-
Styrene glue, PS polystyrene glue pour into groove, then form thermal insulation layer (4) after curing by 100-260 DEG C of 4-8h；
The quantum dot layer (5) is made of quantum dot powder and encapsulation glue, and encapsulation glue is the heat cure glue of two component of A, B,
It includes encapsulation glue A, encapsulation glue B to encapsulate glue；Encapsulation glue A is the catalyst for encapsulating glue B heat cures, encapsulation glue A
After encapsulation glue B is added, it is heating and curing；The material for encapsulating glue is one kind in organic silica gel or organic siliconresin；
The separation layer (6) is Kapton, PET film, PET are the composite membrane of base material, PMMA films or polyvinyl alcohol
It is one or more in film.
2. a kind of backlight module blue chip according to claim 1, the high colour gamut LED lamp bead of green light chip, feature
It is, the excitation wavelength of the quantum dot powder is 620-680nm, and the material of quantum dot powder is BaS, AgInS2、NaCl、Fe2O3、
In2O3、InAs、InN、InP、CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、GaAs、GaN、GaS、GaSe、InGaAs、MgS、
MgSe、MgTe、PbSe、PbTe、Cd(SxSe1-x)、BaTiO3、PbZrO3、CsPbCl3、CsPbBr3、CsPbI3In one kind or more
Kind mixing.
3. a kind of backlight module blue chip according to claim 1, the high colour gamut LED lamp bead of green light chip, feature
It is, the material of the LED support (1) is a kind of in ceramics, PCT, EMC, SMC.
4. a kind of backlight module blue chip according to claim 1, the high colour gamut LED lamp bead of green light chip, feature
It is, at least a LED blue chip (2) and LED green lights chip (3) is contained in the lamp bead；The excitation of LED blue chips (2)
Wavelength is 440-470nm, and the excitation wavelength of LED green lights chip (3) is 500-545nm.
5. a kind of backlight module blue chip according to claim 1, the high colour gamut LED lamp bead of green light chip, feature
It is, the production method of the quantum dot layer (5) includes the following steps：
Step 1: in inert gas shielding environment, the quantum dot powder of 4-20 parts by weight is dissolved in the organic molten of 2-200 parts by weight
Agent forms quantum dot solution；The organic solvent be n-hexane, hexamethylene, normal octane, toluene, dichlorotoleune, dichloromethane,
One kind in chloroform, pyridine；
Step 2: above-mentioned quantum dot solution is added in encapsulation glue B, then encapsulation glue B is put into filled with inert protective gas
Oven in 50-160 DEG C of heating removal encapsulation glue B in organic solvent, obtain quantum dot encapsulation glue B；
Step 3: in inert gas shielding environment, encapsulation glue A is added into above-mentioned quantum dot encapsulation glue B, is stirred
Afterwards, quantum dot encapsulation glue is obtained；
Step 4: in inert gas shielding environment, above-mentioned quantum dot encapsulation glue is added to the upper surface of thermal insulation layer (4),
After quantum dot packaging plastic flow is even, through under 60-180 DEG C of inert gas shielding, after solidification baking, forming quantum dot layer (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810404562.0A CN108615722A (en) | 2018-04-28 | 2018-04-28 | A kind of backlight module blue chip, the high colour gamut LED lamp bead of green light chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810404562.0A CN108615722A (en) | 2018-04-28 | 2018-04-28 | A kind of backlight module blue chip, the high colour gamut LED lamp bead of green light chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108615722A true CN108615722A (en) | 2018-10-02 |
Family
ID=63661731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810404562.0A Pending CN108615722A (en) | 2018-04-28 | 2018-04-28 | A kind of backlight module blue chip, the high colour gamut LED lamp bead of green light chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108615722A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109256452A (en) * | 2018-11-19 | 2019-01-22 | 合肥惠科金扬科技有限公司 | The production method and LED component of LED component |
| CN109494290A (en) * | 2018-10-19 | 2019-03-19 | 安徽芯瑞达科技股份有限公司 | A kind of high colour gamut quantum dot LED lamp bead and its packaging method |
| CN109830475A (en) * | 2019-02-18 | 2019-05-31 | 南通创亿达新材料股份有限公司 | High colour gamut quantum dot lamp bar, preparation method and its backlight module |
| CN112366266A (en) * | 2020-10-28 | 2021-02-12 | 惠柏新材料科技（上海）股份有限公司 | Packaging structure and manufacturing method of quantum dot LED patch |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101232070A (en) * | 2008-01-31 | 2008-07-30 | 中国计量学院 | Illuminating device of single core quantum spot white light LED |
| US20170018692A1 (en) * | 2014-02-28 | 2017-01-19 | Seoul Semiconductor Co., Ltd. | Light-emitting diode package |
| CN106384776A (en) * | 2016-11-30 | 2017-02-08 | 深圳市聚飞光电股份有限公司 | Sandwich type quantum dot LED lamp bead packaging method |
| CN106935693A (en) * | 2017-04-11 | 2017-07-07 | 安徽芯瑞达科技股份有限公司 | Luminous quantum dot CSP backlights in a kind of five face and preparation method thereof |
| CN107123642A (en) * | 2017-07-04 | 2017-09-01 | 安徽芯瑞达科技股份有限公司 | A kind of bluish-green high colour gamut LED lamp bead of chip-in series of red fluorescence powder collocation and its backlight |
-
2018
- 2018-04-28 CN CN201810404562.0A patent/CN108615722A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101232070A (en) * | 2008-01-31 | 2008-07-30 | 中国计量学院 | Illuminating device of single core quantum spot white light LED |
| US20170018692A1 (en) * | 2014-02-28 | 2017-01-19 | Seoul Semiconductor Co., Ltd. | Light-emitting diode package |
| CN106384776A (en) * | 2016-11-30 | 2017-02-08 | 深圳市聚飞光电股份有限公司 | Sandwich type quantum dot LED lamp bead packaging method |
| CN106935693A (en) * | 2017-04-11 | 2017-07-07 | 安徽芯瑞达科技股份有限公司 | Luminous quantum dot CSP backlights in a kind of five face and preparation method thereof |
| CN107123642A (en) * | 2017-07-04 | 2017-09-01 | 安徽芯瑞达科技股份有限公司 | A kind of bluish-green high colour gamut LED lamp bead of chip-in series of red fluorescence powder collocation and its backlight |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109494290A (en) * | 2018-10-19 | 2019-03-19 | 安徽芯瑞达科技股份有限公司 | A kind of high colour gamut quantum dot LED lamp bead and its packaging method |
| CN109256452A (en) * | 2018-11-19 | 2019-01-22 | 合肥惠科金扬科技有限公司 | The production method and LED component of LED component |
| CN109830475A (en) * | 2019-02-18 | 2019-05-31 | 南通创亿达新材料股份有限公司 | High colour gamut quantum dot lamp bar, preparation method and its backlight module |
| CN112366266A (en) * | 2020-10-28 | 2021-02-12 | 惠柏新材料科技（上海）股份有限公司 | Packaging structure and manufacturing method of quantum dot LED patch |
| CN112366266B (en) * | 2020-10-28 | 2022-01-07 | 惠柏新材料科技（上海）股份有限公司 | Packaging structure and manufacturing method of quantum dot LED patch |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108615722A (en) | A kind of backlight module blue chip, the high colour gamut LED lamp bead of green light chip | |
| JP6631973B2 (en) | Quantum dot composite material and its production method and use | |
| KR101519509B1 (en) | Phosphor nanoparticle combinations | |
| US10153407B2 (en) | Packaging method for high gamut white light quantum dot LED | |
| CN104037307B (en) | LED light with quantum dot layer | |
| JP4653662B2 (en) | Wavelength converter, light emitting device, method for manufacturing wavelength converter, and method for manufacturing light emitting device | |
| KR101937241B1 (en) | LED Cap Containing Quantum Dot Phosphors | |
| KR100862695B1 (en) | White light emitting diode | |
| CN106935693A (en) | Luminous quantum dot CSP backlights in a kind of five face and preparation method thereof | |
| CN101740707A (en) | Preformed fluorescent powder patch and method for encapsulating same and light emitting diode | |
| CN108461607B (en) | Light emitting device and image display device | |
| KR20180082422A (en) | METHOD FOR PRODUCING WAVELENGTH CONVERSION MEMBER, | |
| CN100565000C (en) | Utilize the YAG crystalline ceramics to prepare the method for white light LEDs | |
| CN102983250A (en) | Silica gel lens, fabrication method of silica gel lens and LED light emitting device comprising silica gel lens | |
| CN107093662A (en) | A kind of new full-inorganic perovskite quantum dot silica-gel lens and preparation method thereof | |
| CN107068814A (en) | A kind of one side quantum dot CSP backlights and preparation method thereof | |
| CN106992241A (en) | LED light bar and LED area light source module | |
| CN106784260A (en) | A kind of preparation method of direct LED backlight | |
| CN100509994C (en) | Light emitting film, luminescent device, method for manufacturing light emitting film and method for manufacturing luminescent device | |
| CN108767082A (en) | A kind of heat-insulated quantum dot LED lamp bead of polystyrene and preparation method thereof | |
| CN105742462A (en) | Ultraviolet light and multi-quantum dot combined high-gamut white light implementation mode | |
| Wan et al. | Highly Efficient Narrow-Band Green-Emitting Na3K5 (Li3SiO4) 8: Eu2+ Phosphor with Low Thermal Quenching | |
| US9893248B2 (en) | Substrate for changing color of light emitting diode and method for producing same | |
| JP6092372B2 (en) | Open reel | |
| CN101931040A (en) | Packaging of LED area light source |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181002 |
|
| RJ01 | Rejection of invention patent application after publication |