CN109830430B - Silicon nanopore structure with controllable distribution area and preparation method and application thereof - Google Patents
Silicon nanopore structure with controllable distribution area and preparation method and application thereof Download PDFInfo
- Publication number
- CN109830430B CN109830430B CN201910087024.8A CN201910087024A CN109830430B CN 109830430 B CN109830430 B CN 109830430B CN 201910087024 A CN201910087024 A CN 201910087024A CN 109830430 B CN109830430 B CN 109830430B
- Authority
- CN
- China
- Prior art keywords
- silicon
- metal
- metal film
- film
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Weting (AREA)
Abstract
The invention discloses a silicon nanopore structure with controllable distribution area and a preparation method and application thereof. The preparation method comprises the following steps: s1, depositing Si on the surfaces of two sides of SOI3N4Etching the nano film, wherein a silicon surface is formed on one side, and a silicon substrate release window is formed on the other side; s2, after depositing a metal film on the silicon surface of S1, preparing an etching window to obtain the metal film with the required shape; s3, etching the substrate processed in the step S2 to obtain a silicon/metal film double-layer structure; s4, raising the temperature of the selected area of the metal film in the step S3 to form a metal pointed convex object; and S5, removing the metal film and the metal sharp convex objects of S4 to obtain the silicon nano-pore structure. According to the invention, the metal film is prepared on the silicon surface, and the positioning distribution of the nano-pores is realized by controlling the heating area, namely the distribution area is controllable, and the pore size is adjusted. Moreover, the preparation method has the advantages of simple process, low cost and high production efficiency.
Description
Technical Field
The invention relates to the technical field of micro-nano device preparation and application, in particular to a silicon nano-pore structure with controllable distribution area and a preparation method and application thereof.
Background
In recent decades, quantum dots (i.e., semiconductor nanocrystals) have been widely used in the fields of biomarkers, light emitting diodes, lasers, solar cells, etc., due to their unique electronic and luminescent properties, and have gradually become the focus of attention. The quantum dots have incomparable luminescence performance, the quantum dots with different emission wavelengths can be obtained by adjusting different sizes, and the narrow and symmetrical fluorescence emission enables the quantum dots to become an ideal multicolor marking material.
The quantum dots have important significance for basic physical research, novel electronic and photoelectric devices, and the research on the growth of quantum dot materials and the application of devices is one of the hot spots in the scientific community. As a typical semiconductor nano material, compared with other quantum dots, the silicon quantum dot has unique surface modifiability, nontoxicity and biocompatibility, has potential application in the fields of biology and medicine, and attracts the attention of many scholars.
In terms of preparation methods, a common epitaxial growth method is a common method for obtaining high-quality semiconductor quantum dots, but the growth of the semiconductor quantum dots is carried out under high vacuum or ultrahigh vacuum, so that the material growth cost is very high; although the quantum dots prepared by the chemical etching method have high purity and excellent performance, the quantum dot material has non-uniform size due to the anisotropy of etching, and the adopted chemical liquid causes certain pollution to the environment. The prior art CN107416762A discloses a silicon nanopore structure and a manufacturing method thereof, but the manufacturing method cannot realize the positioning distribution of silicon nanopores.
Therefore, it is desirable to provide a method for preparing a silicon nanopore structure with a controllable distribution area.
Disclosure of Invention
The invention provides a preparation method of a silicon nanopore structure with controllable distribution area, aiming at overcoming the defect that the silicon nanopore in the prior art can not realize positioning distribution, and the provided preparation method realizes the positioning distribution of the silicon nanopore, namely the distribution area is controllable, the pore size is adjusted, and the preparation method has the advantages of simple process, lower cost and higher production efficiency.
The invention also aims to provide the silicon nano-pore structure prepared by the preparation method.
The invention also aims to provide application of the silicon nanopore structure in preparation of photoelectric devices.
In order to solve the technical problems, the invention adopts the technical scheme that:
a preparation method of a silicon nano-pore structure with controllable distribution area comprises the following steps:
s1 deposition of Si on both sides of SOI3N4Etching the nano film, wherein a silicon surface is formed on one side, and a silicon substrate release window is formed on the other side;
s2, after depositing a metal film on the silicon surface of S1, preparing an etching window to obtain the metal film with the required shape;
s3, etching the substrate processed by the S2 to obtain a silicon/metal film double-layer structure;
s4, raising the temperature of the selected area of the metal film in the step S3 to form a metal pointed convex object;
and S5, removing the metal film and the metal sharp convex object of the S4 to obtain the silicon nano-pore structure.
The invention takes a Silicon On Insulator (SOI) On an insulating substrate as a substrate, and low-stress Si is respectively deposited On the surfaces of two sides of the substrate3N4And (3) a nano film. Etching of Si3N4And the nano film has one side formed silicon surface and the other side formed silicon substrate releasing window. Preparing a metal film with a required shape on the surface of the silicon, etching to obtain a silicon/metal film double-layer structure, and controlling a heating area to increase the temperature of a selected area, so that silicon atoms permeate into the metal film, and metal in the metal film can diffuse into the silicon to form a metal sharp convex object; and removing the metal film and the metal sharp convex objects to obtain the silicon nano-pore structure distributed in the middle heating belt.
The invention controls the distribution position of the silicon nano-holes in the middle heating zone area by controlling the heating area, thereby realizing the positioning distribution of the silicon nano-holes, namely the distribution area is controllable. The aperture size of the silicon nano-pore can be adjusted by controlling the heating degree, and the invention provides a novel template preparation method for preparing quantum dots. In addition, the preparation method has the advantages of simple process, lower cost and higher production efficiency. The prepared nano-pore structure has better expansibility, can be repeatedly recycled, and has wider application prospect in the field of photoelectric device preparation.
Preferably, the deposition is performed using a low pressure chemical vapor deposition method (LP-CVD) in step S1.
Preferably, said Si in step S13N4The thickness of the nano film is 20-200 nm. More preferably, Si is said in step S13N4The thickness of the nano-film is100 nm。
Preferably, the SOI in step S1 has a top silicon thickness of 20-500 nm. More preferably, the SOI in step S1 has a top silicon thickness of 200 nm.
Preferably, the etching in step S1 is reactive ion etching or phosphoric acid solution etching. More preferably, the etching in step S1 is reactive ion etching.
Preferably, the size of the silicon substrate release window in step S1 is 400 μm × 400 μm to 2000 μm × 2000 μm. More preferably, the size of the silicon substrate release window in step S1 is 700 μm × 700 μm.
Preferably, the forming process of the silicon substrate release window in step S1 is: in Si3N4Coating 50 nm-1 mu m photoresist on the surface of the nano film, then forming an opening by photoetching and patterning the photoresist, and etching Si below the opening by adopting a reactive ion etching method3N4And forming a silicon substrate release window by the nano film.
Preferably, the metal film in step S2 is an aluminum film or a gold film. More preferably, the metal thin film in step S2 is an aluminum thin film.
The reason why the aluminum thin film is preferred is that silicon atoms have considerable solid solubility in aluminum at high temperature, and the solubility changes significantly with the temperature rise in a certain temperature range, so that it is easier to control the solubility of silicon atoms in aluminum according to the heating temperature, thereby controlling the depth of the metal hillock.
Preferably, the thickness of the metal thin film in step S2 is 100nm to 2 μm. More preferably, the thickness of the metal thin film in step S2 is 1 μm.
Preferably, the deposition in step S2 is performed by electron beam evaporation, magnetron sputtering or atomic layer deposition. More preferably, the deposition in step S2 employs an electron beam evaporation method.
Preferably, the step S2 of preparing the metal film with the desired shape specifically includes: and (5) after depositing the metal film on the silicon surface of S1, spin-coating photoresist on the surface of the metal film, exposing the photoresist by using an ultraviolet exposure technology, and developing to form an etching window to obtain the metal film with the required shape.
Preferably, the process of preparing the metal thin film of the desired shape in step S2 may further include: and (4) after the silicon surface of the S1 is coated with the photoresist in a spinning mode, exposing the photoresist by utilizing an ultraviolet exposure technology, developing to obtain the photoresist with the required shape, and then depositing a metal film on the photoresist to obtain the metal film with the required shape.
The spin coating technology is adopted mainly because the spin coating is easy to obtain a coating with higher density, and the thickness of the coating is more uniform.
Preferably, the thickness of the photoresist in step S2 is 50nm to 1 μm. More preferably, the photoresist in step S2 has a thickness of 500 nm.
Preferably, the preparing of the metal film with the desired shape in step S2 further includes the steps of etching the metal film and removing the photoresist.
Preferably, the photoresist is removed in step S2 using a lift-off process.
Preferably, the etching in step S2 is ion beam etching.
Preferably, the etching in step S3 specifically includes: firstly, etching a silicon substrate on one side by using an alkaline solution, and then etching a silicon dioxide layer on the back by using a reactive ion etching technology.
Preferably, the alkaline solution in step S3 is KOH or TMAH. More preferably, the basic solution in step S3 is KOH. Preferably, the concentration of KOH is 30%.
The method of raising the temperature of the middle portion of the metal thin film in step S4 may be direct heating, or may be a method of forming a metal pointed protrusion by applying a voltage to generate heat.
Preferably, the temperature of the middle portion of the metal thin film is increased in step S4 by heating the metal thin film.
In step S2, the metal film has a shape with a narrow middle and wide ends. The middle of the metal film is narrow, and the middle part of the metal film is heated to be used as a heating belt. At this time, the selected area is a middle heat generation belt area. The width range of the heating belt is 5-50 μm, and the width range of the connection part (namely two ends) with the heating belt is 100-800 μm. The method can adjust the heating temperature and control the solubility of silicon atoms in aluminum under the same heating time, thereby controlling the depth of the metal sharp bulge. The size of the silicon nanometer pore diameter can be adjusted by controlling the depth of the metal sharp convex object.
Preferably, the heating temperature in step S4 is 100-800 ℃. More preferably, the heating temperature in step S4 is 500 ℃. The heating time may be 30 min.
Preferably, the depth of the metal sharp projection in the step S4 is 50nm to 1 μm. More preferably, the depth of the metal sharp projection in step S4 is 350 nm.
Preferably, the removal in step S5 is performed by etching with a strong acid or strong base solution. Preferably, the strong base is sodium hydroxide solution.
The invention also protects the silicon nano-pore structure prepared by the preparation method.
The invention also protects the application of the silicon nanopore structure in the preparation of photoelectric devices.
The invention also protects the application of the silicon nanopore structure in biomarkers, light-emitting diodes, lasers or solar cells.
Compared with the prior art, the invention has the beneficial effects that:
the invention prepares the metal film with the required shape on the silicon surface and then etches the metal film to obtain the silicon/metal film double-layer structure, then raises the temperature of the selected area and controls the distribution position of the silicon nano-holes in the selected area, thereby realizing the positioning distribution of the silicon nano-holes, namely the distribution area is controllable. And the aperture size of the silicon nano-pore can be adjusted by controlling the heating degree, so that the preparation of quantum dots with different energy levels is realized. Therefore, the invention realizes the positioning distribution and the adjustment of the pore size of the silicon nano-pores. In addition, the preparation method of the silicon nanopore structure provided by the invention has the advantages of simple process, low cost and high production efficiency.
Drawings
FIG. 1 is a process flow diagram of the preparation process in example 1.
Fig. 2 is a schematic view of a silicon substrate SOI required by the present invention.
Fig. 3 is a schematic structural diagram presented in step S2 of embodiment 1.
Fig. 4 is a schematic structural diagram presented in step S3 of embodiment 1.
Fig. 5 is a schematic structural diagram presented in step S4 of embodiment 1.
Fig. 6 is a schematic structural diagram presented in step S5 of embodiment 1.
Fig. 7 is a schematic structural diagram presented in step S6 of embodiment 1.
Fig. 8 is a schematic structural diagram presented in step S6 of embodiment 1.
Fig. 9 is a partial top view presented in step S6 of embodiment 1.
Fig. 10 is a schematic structural diagram presented in step S5 of embodiment 2.
Fig. 11 is a schematic structural diagram presented in step S5 of embodiment 2.
Fig. 12 is a schematic structural diagram presented in step S6 of embodiment 2.
Fig. 13 is a schematic structural diagram presented in step S6 of embodiment 2.
Fig. 14 is a partial top view presented in step S7 of example 1 and example 2.
Fig. 15 is a schematic structural diagram presented in step S8 in embodiment 1 and embodiment 2.
Fig. 16 is a schematic structural diagram presented in step S9 in embodiment 1 and embodiment 2.
Fig. 17 is a schematic structural diagram presented in step S10 in embodiment 1 and embodiment 2.
Fig. 18 is a schematic structural diagram presented in step S11 in embodiment 1 and embodiment 2.
Element number description: 1. base, 10, top silicon, 11, SiO 212, silicon substrate, 100, silicon nanopore, 110, SiO2Window, 120, etch trench, 2, Si3N4Nano film, 20, top layer Si3N4Nano film, 21, bottom layer Si3N4Nanometer film 210, silicon substrate release window 3, metal film 30, metal sharp convex object 4, photoresist 40, etchingAnd (4) a window.
Detailed Description
The present invention will be further described with reference to specific embodiments, but the embodiments of the present invention are not limited thereto. The raw materials in the examples are all commercially available; reagents, methods and apparatus used in the present invention are conventional in the art unless otherwise indicated.
Please refer to fig. 1 to 15. It should be noted that the drawings provided in the embodiments are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in the actual implementation, and the type, number and proportion of the components in the actual implementation can be changed freely, and the layout of the components can be more complicated.
Example 1
A preparation method of a silicon nano-pore structure with controllable distribution area comprises the following steps:
s1, providing a silicon wafer (SOI) on an insulating substrate as a base body, wherein the base body comprises top silicon 10, a silicon dioxide layer 11 and a silicon substrate 12; wherein the thickness of the top layer silicon 10 is 200 nm. As shown in fig. 2.
S2, depositing 100nm Si on the two side surfaces of the substrate by low pressure chemical vapor deposition3N4A nano-film 2; as shown in FIG. 3, Si is present on the substrate side3N4A nano-film 20 with Si on the other side3N4A nano-film 21.
S3, etching Si by reactive ion etching method3N4The nano-film 20 forms a silicon surface, Si3N4The nano-film 20 is completely etched; as shown in fig. 4.
S4 in Si3N4Coating 500nm photoresist on the surface of the nano film 21, forming an opening by photoetching and patterning the photoresist, and etching Si in the selected opening area by adopting a reactive ion etching method3N4The nano-film 21 forms a silicon substrate release window 210 having a size of 700 μm x 700 μm as shown in fig. 5.
S5, depositing a 1 μm aluminum film 3 on the silicon surface by electron beam evaporation; as shown in fig. 6.
S6, spin-coating a layer of 500nm photoresist 4 on the surface of the aluminum film 3, as shown in FIG. 7, exposing the photoresist 4 by using an ultraviolet exposure technology, and developing to obtain an etching window 40 with a required shape; as shown in fig. 8; a partial top view is shown in fig. 9.
S7, etching the aluminum film 3 by adopting ion beams, and removing the photoresist to obtain the aluminum film 3 with the required shape; the middle part is a heating belt with the width of micron order, and the electrode connecting part with two wider ends is connected with the heating belt, and the partial plan view is shown in figure 14.
S8, releasing by using the silicon substrate release window 210 formed by etching in the step S4, and etching the silicon substrate by using KOH solution with the concentration of 30% to form an etching groove 120, as shown in FIG. 15;
s9, etching the silicon dioxide layer 11 on the back by using the reactive ion etching technology to obtain a silicon 10/aluminum film 3 double-layer structure; as shown in fig. 16.
S10, applying voltage to two ends of the top layer silicon 10 to enable the middle heating belt to heat, and enabling silicon atoms to penetrate into the aluminum film to enable the middle heating belt with the width of 20 microns to heat, wherein the silicon atoms penetrate into the aluminum film, and aluminum in the aluminum film can diffuse into the top layer silicon 10 to form the metal sharp bulge 30 with the depth of 350 nm; as shown in fig. 17.
S11, corroding the aluminum film 3 and the metal sharp protrusions 30 thereof by using a sodium hydroxide solution to obtain silicon nanopore structures 100 distributed in the middle heating zone; as shown in fig. 18. The aperture of the prepared silicon nano-pore structure is 100 nm.
Example 2
A preparation method of a silicon nano-pore structure with controllable distribution area comprises the following steps:
S1-S4. the same as example 1.
S5, spin-coating a layer of 500nm photoresist 4 on the silicon surface, as shown in FIG. 10, exposing the photoresist 4 by ultraviolet exposure technology, and developing to obtain the photoresist 4 with the required shape, as shown in FIG. 11.
S6, depositing a 1 μm aluminum film 3 on the photoresist 4 by electron beam evaporation; as shown in fig. 12, and a left side view is shown in fig. 13.
S7, stripping the photoresist 4 by utilizing a stripping process to obtain the aluminum film 3 with the required shape; the middle part is a heating belt with the width of micron order, and the electrode connecting part with two wider ends is connected with the heating belt, and the partial plan view is shown in figure 14.
S8 to S11 are the same as those in example 1. The positioning distribution and the pore diameter of the prepared silicon nanopore structure are the same as those of the embodiment 1.
Example 3
The present embodiment is different from embodiment 1 in that the metal film of the present embodiment is a gold film, and in step S10 of the present embodiment, the temperature of the middle portion of the metal film is increased by heating the metal film at 500 ℃ for 30 min; the middle heating belt is heated, silicon atoms permeate into the gold film, and gold in the gold film can diffuse into the top silicon layer to form a metal sharp convex object; the depth of the metal sharp convex object is 200nm, and the thickness of the top layer silicon 10 is 150 nm;
the amounts of other raw materials and the operation procedure were the same as in example 1. The aperture of the prepared silicon nano-pore structure is 50 nm.
Example 4
The difference between this embodiment and embodiment 1 is that the depth of the metal sharp projection in this embodiment is 500nm by changing the magnitude of the applied voltage;
the amounts of other raw materials and the operation procedure were the same as in example 1. The aperture of the prepared silicon nano-pore structure is 150 nm.
Therefore, the preparation methods provided in embodiments 1 to 5 can realize the positioning distribution and the adjustment of the pore size of the silicon nanopores. In addition, the preparation method of the silicon nanopore structure provided by the invention has the advantages of simple process, low cost and high production efficiency.
It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (8)
1. A preparation method of a silicon nanopore structure with controllable distribution area is characterized by comprising the following steps:
s1, depositing Si3N4 nano films on the surfaces of two sides of an SOI (silicon on insulator) and then etching, wherein a silicon surface is formed on one side, and a silicon substrate release window is formed on the other side;
s2, after depositing a metal film on the silicon surface of S1, preparing an etching window to obtain the metal film with the required shape;
s3, etching the substrate processed in the step S2 to obtain a silicon/metal film double-layer structure;
s4, raising the temperature of the selected area of the metal film in the step S3 to form a metal pointed convex object;
and S5, removing the metal film and the metal sharp convex objects of S4 to obtain the silicon nano-pore structure.
2. The method according to claim 1, wherein the metal thin film in step S2 is an aluminum thin film or a gold thin film.
3. The method according to claim 1, wherein the thickness of the metal thin film in step S2 is 50 to 500 nm.
4. The method of claim 1, wherein the depth of the metal hillock in step S4 is 50nm to 1 μm.
5. The method according to claim 1, wherein the step S2 of preparing the metal thin film with a desired shape comprises: and (5) after depositing the metal film on the silicon surface of S1, spin-coating photoresist on the surface of the metal film, exposing the photoresist by using an ultraviolet exposure technology, and developing to form an etching window to obtain the metal film with the required shape.
6. The method of claim 1, wherein the step S2 of preparing the metal thin film of the desired shape comprises: and (4) after the silicon surface of the S1 is coated with the photoresist in a spinning mode, exposing the photoresist by utilizing an ultraviolet exposure technology, developing to obtain the photoresist with the required shape, and then depositing a metal film on the photoresist to obtain the metal film with the required shape.
7. The production method according to claim 5 or 6, wherein the photoresist has a thickness of 50nm to 1 μm.
8. The method according to claim 5 or 6, wherein the step of preparing the metal thin film of desired shape in step S2 further comprises the steps of etching the metal thin film and removing the photoresist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910087024.8A CN109830430B (en) | 2019-01-29 | 2019-01-29 | Silicon nanopore structure with controllable distribution area and preparation method and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910087024.8A CN109830430B (en) | 2019-01-29 | 2019-01-29 | Silicon nanopore structure with controllable distribution area and preparation method and application thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109830430A CN109830430A (en) | 2019-05-31 |
| CN109830430B true CN109830430B (en) | 2021-04-23 |
Family
ID=66862876
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910087024.8A Active CN109830430B (en) | 2019-01-29 | 2019-01-29 | Silicon nanopore structure with controllable distribution area and preparation method and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109830430B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6150243A (en) * | 1998-11-05 | 2000-11-21 | Advanced Micro Devices, Inc. | Shallow junction formation by out-diffusion from a doped dielectric layer through a salicide layer |
| US20140083493A1 (en) * | 2012-09-27 | 2014-03-27 | Xi Zhu | Conductive contact for solar cell |
| CN107416762A (en) * | 2017-05-16 | 2017-12-01 | 广东工业大学 | A kind of silicon nano hole structure and preparation method thereof |
-
2019
- 2019-01-29 CN CN201910087024.8A patent/CN109830430B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6150243A (en) * | 1998-11-05 | 2000-11-21 | Advanced Micro Devices, Inc. | Shallow junction formation by out-diffusion from a doped dielectric layer through a salicide layer |
| US20140083493A1 (en) * | 2012-09-27 | 2014-03-27 | Xi Zhu | Conductive contact for solar cell |
| CN107416762A (en) * | 2017-05-16 | 2017-12-01 | 广东工业大学 | A kind of silicon nano hole structure and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 《SiN薄膜纳米孔芯片制造工艺实验研究》;袁志山等;《东南大学学报(自然科学版)》;20160920;第46卷(第5期);第977-981页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109830430A (en) | 2019-05-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Lei et al. | Highly ordered nanostructures with tunable size, shape and properties: A new way to surface nano-patterning using ultra-thin alumina masks | |
| US7875195B2 (en) | Thick porous anodic alumina films and nanowire arrays grown on a solid substrate | |
| CN102157642A (en) | Nanoimprint based preparation method of LED with high light-emitting efficiency | |
| CN103117210B (en) | A kind of nano-pore copies the new method in conjunction with the orderly Ge/Si quantum dot array of sputtering sedimentation self assembly | |
| US20120168713A1 (en) | Method for manufacturing a silicon nanowire array using a porous metal film | |
| JP2002526354A (en) | Method for producing carbon nanotubes as a functional element of a MEMS device | |
| WO2018196319A1 (en) | Carbon nano-dot photoresist with fluorescent effect, and imaging method thereof | |
| JP2009158478A (en) | Plasmonic crystal plane light emitting body, image display device, and lighting apparatus | |
| CN110174818A (en) | The nano impression preparation method and its substrate of substrate | |
| CN103840050A (en) | Method for fast preparing sapphire pattern substrate through nanoimprint technology | |
| KR101064900B1 (en) | Method of forming pattern | |
| CN109437091A (en) | A method of preparing micro-nano structure in elastic substrate | |
| CN109900642A (en) | A kind of submicron order miniature optical reactor and preparation method thereof | |
| CN103863999B (en) | A kind of preparation method of metal Nano structure | |
| CN109830430B (en) | Silicon nanopore structure with controllable distribution area and preparation method and application thereof | |
| KR100803053B1 (en) | Method for fabricating periodic zinc oxide nanorod arrays | |
| JP5082186B2 (en) | Method for forming carbon-based material protrusion and carbon-based material protrusion | |
| KR101886056B1 (en) | forming method of nanostructure pattern by vacuum deposition and sensor device thereby | |
| CN107844027A (en) | A kind of high-resolution overlength 1-dimention nano pattern preparation method | |
| KR101299359B1 (en) | 2D Photonic crystal structure having improved light extraction efficiency and Method of manufacturing the same | |
| CN106226865B (en) | Nanometer straight hole cyclic array preparation method in a kind of photonic crystal | |
| CN109748236A (en) | A kind of two-dimensional nano mould making method of low cost | |
| Asoh et al. | Pt–Pd-embedded silicon microwell arrays | |
| CN108538974B (en) | Preparation method of nano-scale patterned sapphire substrate | |
| KR101103484B1 (en) | Method for fabricating roll stamp |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Yuan Zhishan Inventor after: Wu Dandan Inventor after: Wang Chengyong Inventor before: Wu Dandan Inventor before: Yuan Zhishan Inventor before: Wang Chengyong Inventor before: Ling Xinsheng |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |