CN107844027A - A kind of high-resolution overlength 1-dimention nano pattern preparation method - Google Patents
A kind of high-resolution overlength 1-dimention nano pattern preparation method Download PDFInfo
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- CN107844027A CN107844027A CN201710898222.3A CN201710898222A CN107844027A CN 107844027 A CN107844027 A CN 107844027A CN 201710898222 A CN201710898222 A CN 201710898222A CN 107844027 A CN107844027 A CN 107844027A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
Abstract
A kind of high-resolution overlength 1-dimention nano pattern preparation method, it is characterized in that comprising the following steps：The not corrodible nano thin-film layer (2) of step 1) alternating deposit on flat substrate (1) and corrodible nanometer thin film layer (3)；Step 2) cuts flat substrate (1), not corrodible nano thin-film layer (2) and corrodible nanometer thin film layer (3), optionally corrodible nanometer thin film layer (3) is corroded in fracture so that it forms drop between not corrodible nano thin-film layer (2).The inventive method can be applied to the preparation of a variety of 1-dimention nano patterns of high-resolution overlength, and this method prepares high resolution, and technique is simple, energy high efficiency, prepares 1-dimention nano pattern in multiple functions material surface at low cost, can be good at meeting actual demand.
Description
Technical field
The invention belongs to nano-pattern preparing technical field, and in particular to a kind of high-resolution overlength 1-dimention nano pattern system
Preparation Method.
Background technology
A branch of the 1-dimention nano pattern as nano surface pattern, in fields such as optical element, nano electron devices
Have a wide range of applications.Fiber waveguide, 1-dimention nano grating in optical element, the nanometer microchannel in microflow controlled biochip,
Graphene nanobelt in nano electron device etc. is all typical 1-dimention nano pattern.These applications usually require 1-dimention nano
Pattern has high-resolution and larger length.Therefore, the 1-dimention nano pattern technology of preparing of high-resolution greater depth turns into
One focus of nanosecond science and technology research field.At present, common substrate surface 1-dimention nano pattern preparation method mainly has ink-jet
Printing technique, mechanical scribing techniques, Chemical self-assembly technology, block polymer phase detachment technique, interference photoetching technology, scanning are visited
Pin direct writing technology, electron beam lithography, focused ion beam lithography technology etc..
Certain deficiency all be present in these methods：Inkjet technology and mechanical scribing techniques can be in multiple functions materials
Surface prepares the pattern of arbitrary dimension and efficiency is higher, but preparation resolution ratio is not high, hardly results in line width below 100 nanometers
1-dimention nano pattern.Scanning probe direct writing technology, electron beam lithography and this kind of direct write of focused ion beam lithography technology can be with
High-resolution any 1-dimention nano pattern is freely prepared, but the usual operating efficiency of these technologies is very low, and device therefor is expensive,
Manufacturing cycle is very long.These direct-write methods usually require less write field in the smaller nano-pattern of preparation line width can just obtain
Obtain preferable graphical quality.If necessary to processing 1-dimention nano pattern length it is larger when, this just needs to be write out point with a lot
A part therein is not exposed is spliced into complete pattern again.It thus may require that aligning equipment and gearshift have very high essence
Degree, therefore increase equipment cost.Meanwhile splicing needed for the method for composed pattern is often, time length, and figure can be produced unavoidably
The error of case splicing, so as to influence pattern quality.Chemical self-assembly technology, block polymer phase detachment technique and interference lithography skill
Art can prepare high-resolution 1-dimention nano pattern at low cost, but these technologies are typically only capable to prepare with large area, high efficiency
Simple periodically one-dimensional nano-array pattern, can not realize the preparation of any 1-dimention nano pattern.
The content of the invention
In view of the above circumstances, it is an object of the invention to provide a kind of high-resolution overlength 1-dimention nano pattern preparation side
Method, this method utilize the corrodible layer of flat substrate incision position, can not corrosion layer and flat substrate composition 1-dimention nano pattern system
Standby flexible nano impression block, recycle nanometer embossing prize pattern to be transferred on functional material, be characterized in process cycle
Short, cost is low, and preparation length is longer, prepares pattern quality height, high resolution is reproducible, available for multiple functions material table
The preparation of a variety of 1-dimention nano patterns in face.
To achieve the above object, the technical solution adopted in the present invention is：
A kind of high-resolution overlength 1-dimention nano pattern preparation method, it is characterized in that comprising the following steps：
Step 1) the not corrodible nano thin-film layer (2) of alternating deposit and corrodible nanometer thin film layer on flat substrate (1)
(3)；
Step 2) cuts flat substrate (1), not corrodible nano thin-film layer (2) and corrodible nanometer thin film layer (3), disconnected
Mouth optionally corrodes to corrodible nanometer thin film layer (3) so that it is formed between not corrodible nano thin-film layer (2)
Drop；
Step 3) is by between the not corrodible nano thin-film layer (2) obtained in step 2) and corrodible nanometer thin film layer (3)
The 1-dimention nano intaglio pattern of drop composition be transferred to flexible substrate (4) surface and obtain flexible nano impression block (5)；
Step 4) is imprinted out one-dimensional described in step 3) using flexible nano impression block (5) on nano impression glue (8)
Nanometer intaglio pattern corresponds to the gravure structure (9) of consistent nano impression glue；
Step 5) passes through selectively etch step 4) described in nano impression glue gravure structure (9) recess, will walk
It is rapid 3) described in 1-dimention nano intaglio pattern be transferred on the flat substrate top layer (7) on functional material substrate (6) surface, prepare
Functional material 1-dimention nano pattern；
Step 6) utilizes the gravure structure (9) for being etched away unnecessary nano impression glue.
Described not corrodible nano thin-film layer (2) and the depositional mode of corrodible nanometer thin film layer (3) are chemical gaseous phase
Deposition, epitaxial growth, electron-beam evaporation, ald, pulsed laser deposition or plasma sputter deposition；It is not corrodible
The material of nanometer thin film layer (2) and corrodible nanometer thin film layer (3) is metal, semiconductor, metal oxide, polymeric material,
Wherein corrodible nanometer thin film layer (3) can be corroded under certain etching condition, without corrodible nanometer thin film layer (2) at this
It will not be corroded under part；Etching condition is the dry etching of the wet etching either plasma of liquid phase corrosives, corrodible
The corrosion depth of nanometer thin film layer (3) is between 1-50000 nanometers.
Described flat substrate (1) is silicon chip, quartz plate, sheet glass, sheet metal or resin sheet.
Described flexible substrate (4) is silicone rubber plate, dimethyl silicone polymer, hard PDMS, polyolefin elastomer or flexibility
Resin film.
Described nano impression glue (8) is the liquid prepolymer of UV curable or heat cure, or thermoplastic polymer.
Described step 4) is embossed to hot nano impression, heat cure nano impression or ultraviolet solidified nano impressing.
The lithographic method of the step 5) is plasma etching, ion beam etching, wet etching or electrochemical etching.
1-dimention nano intaglio pattern described in step 3) is nanometer channel pattern, nanometer grating pattern, and pattern line-width is in 1-
Between 50000 nanometers, determined by the not corrodible nano thin-film layer (2) deposited and the thickness of corrodible nanometer thin film layer (3).
The length of 1-dimention nano intaglio pattern described in step 3) is between 0.1-500 millimeters, by the flat substrate deposited
(1) size determines.
The material of the functional material substrate (6) of described step 5) is graphene film, molybdenum disulfide film, metal, list
Crystal silicon, polysilicon, silica, glass, metal oxide, semi-conducting material, polymeric material or biological macromolecule material.
Beneficial effects of the present invention are as follows：
The invention provides a kind of high-resolution overlength 1-dimention nano pattern preparation method, with existing 1-dimention nano pattern system
Standby technology, which is compared, to be had an advantageous effect in that：The present invention is obtained flat substrate and broken using film deposition techniques and wet etch techniques
1-dimention nano pattern at mouthful, then transfer the pattern onto in flexible substrate and shifted pattern by nano impression and lithographic technique
To functional material surface.Because suitable thin film deposition be capable of controllable preparation thickness very little corrodible layer and can not corrosion layer it is thin
Film, nanometer embossing can realize high-resolution pattern transfer again, so the preparation method can be used for the high-resolution of overlength
A variety of 1-dimention nano patterns controllable preparation.Because preparation process employs nanometer embossing, so the preparation method has
It is that process cycle is short to have feature, and strong applicability, cost is low, prepare length length, high resolution, it is reproducible the advantages of.
Brief description of the drawings
The present invention is described in further detail with reference to the accompanying drawings and examples：
Fig. 1 is that the high-resolution overlength 1-dimention nano channel patterns Flexible formwork assembly of the embodiment of the present invention is prepared and utilized soft
Property template prepare high-resolution overlength one-dimensional single crystal silicon nanometer waveguide patterns schematic diagram.
Wherein, 1 flat substrate, 2 not corrodible nano thin-film layers, 3 corrodible nanometer thin film layers, 4 flexible substrates, 5 is flexible
Nano-imprint stamp, 6 functional material substrates, 7 flat substrate top layers, 8 nano impression glue, the gravure structure of 9 nano impression glue.
Fig. 2 is the One Dimension Silicon nanometer waveguide pattern scan electron microscope picture of the preparation of the present invention.
Embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples：
Such as Fig. 1 to Fig. 2, a kind of high-resolution overlength 1-dimention nano pattern preparation method, it is characterized in that comprising the following steps：
Step 1) the not corrodible nano thin-film layer (2) of alternating deposit and corrodible nanometer thin film layer on flat substrate (1)
(3)；
Step 2) cuts flat substrate (1), not corrodible nano thin-film layer (2) and corrodible nanometer thin film layer (3), disconnected
Mouth optionally corrodes to corrodible nanometer thin film layer (3) so that it is formed between not corrodible nano thin-film layer (2)
Drop；
Step 3) is by between the not corrodible nano thin-film layer (2) obtained in step 2) and corrodible nanometer thin film layer (3)
The 1-dimention nano intaglio pattern of drop composition be transferred to flexible substrate (4) surface and obtain flexible nano impression block (5)；
Step 4) is imprinted out one-dimensional described in step 3) using flexible nano impression block (5) on nano impression glue (8)
Nanometer intaglio pattern corresponds to the gravure structure (9) of consistent nano impression glue；
Step 5) passes through selectively etch step 4) described in nano impression glue gravure structure (9) recess, will walk
It is rapid 3) described in 1-dimention nano intaglio pattern be transferred on the flat substrate top layer (7) on functional material substrate (6) surface, prepare
Functional material 1-dimention nano pattern；
Step 6) utilizes the gravure structure (9) for being etched away unnecessary nano impression glue.
Described not corrodible nano thin-film layer (2) and the depositional mode of corrodible nanometer thin film layer (3) are chemical gaseous phase
Deposition, epitaxial growth, electron-beam evaporation, ald, pulsed laser deposition or plasma sputter deposition；It is not corrodible
The material of nanometer thin film layer (2) and corrodible nanometer thin film layer (3) is metal, semiconductor, metal oxide, polymeric material,
Wherein corrodible nanometer thin film layer (3) can be corroded under certain etching condition, without corrodible nanometer thin film layer (2) at this
It will not be corroded under part；Etching condition is the dry etching of the wet etching either plasma of liquid phase corrosives, corrodible
The corrosion depth of nanometer thin film layer (3) is between 1-50000 nanometers.
Described flat substrate (1) is silicon chip, quartz plate, sheet glass, sheet metal or resin sheet.
Described flexible substrate (4) is silicone rubber plate, dimethyl silicone polymer, hard PDMS, polyolefin elastomer or flexibility
Resin film.
Described nano impression glue (8) is the liquid prepolymer of UV curable or heat cure, or thermoplastic polymer.
Described step 4) is embossed to hot nano impression, heat cure nano impression or ultraviolet solidified nano impressing.
The lithographic method of the step 5) is plasma etching, ion beam etching, wet etching or electrochemical etching.
1-dimention nano intaglio pattern described in step 3) is nanometer channel pattern, nanometer grating pattern, and pattern line-width is in 1-
Between 50000 nanometers, determined by the not corrodible nano thin-film layer (2) deposited and the thickness of corrodible nanometer thin film layer (3).
The length of 1-dimention nano intaglio pattern described in step 3) is between 0.1-500 millimeters, by the flat substrate deposited
(1) size determines.
The material of the functional material substrate (6) of described step 5) is graphene film, molybdenum disulfide film, metal, list
Crystal silicon, polysilicon, silica, glass, metal oxide, semi-conducting material, polymeric material or biological macromolecule material.
Functional material substrate 6 is SOI flat substrates；Flat substrate top layer 7 is SOI monocrystalline silicon.
Embodiment：Preparation method is introduced by taking the preparation of specific One Dimension Silicon nanometer waveguide patterns as an example.Its preparation process is as follows：
(1) the corrodible layer of plasma reinforced chemical vapour deposition alternating deposit nanometer grade thickness and oxygen are used on flat substrate
SiClx nano thin-film.
(2) flat substrate is cut, optionally corrodes the corrodible of 200 nm deeps in flat substrate fracture with phosphoric acid
Layer.
(3) the 1-dimention nano waveguide patterns that the corrodible layer of flat substrate incision position, silica and flat substrate form are turned
Move on to flexible substrate surface and obtain flexible nano impression block.
(4) it is stamped in using ultraviolet nanometer on SOI flat substrate top monocrystalline silicon layers and imprints out corresponding with template receive
The 1-dimention nano waveguide patterns of rice impressing glue.
(5) remnant layer of nano impression glue is worn using oxygen gas plasma etching, so that subsequent etching can be with direct etching
To monocrystalline silicon layer..
(6) pattern of nano impression glue is transferred to SOI flat substrate top monocrystalline silicon layer tables using reactive ion etching
Face.
(7) it is etched away using oxygen gas plasma and removes unnecessary nano impression glue material, obtains One Dimension Silicon nanometer wave
Lead pattern (such as Fig. 2).
The above-described embodiments are merely illustrative of preferred embodiments of the present invention, not to the structure of the present invention
Think and scope is defined, under the premise of design concept of the present invention is not departed from, ordinary skill technical staff is to this hair in this area
The all variations and modifications that bright technical scheme is made, protection scope of the present invention, the claimed skill of the present invention all should be fallen into
Art content has all been recorded in detail in the claims.
Claims (10)
- A kind of 1. high-resolution overlength 1-dimention nano pattern preparation method, it is characterized in that comprising the following steps：The not corrodible nano thin-film layer (2) of step 1) alternating deposit on flat substrate (1) and corrodible nanometer thin film layer (3)；Step 2) cuts flat substrate (1), not corrodible nano thin-film layer (2) and corrodible nanometer thin film layer (3), is selected in fracture Selecting property corrodible nanometer thin film layer (3) is corroded so that it forms between not corrodible nano thin-film layer (2) Difference；Step 3) is by falling between the not corrodible nano thin-film layer (2) obtained in step 2) and corrodible nanometer thin film layer (3) The 1-dimention nano intaglio pattern of difference composition is transferred to flexible substrate (4) surface and obtains flexible nano impression block (5)；Step 4) imprints out the 1-dimention nano described in step 3) using flexible nano impression block (5) on nano impression glue (8) Intaglio pattern corresponds to the gravure structure (9) of consistent nano impression glue；Step 5) passes through selectively etch step 4) described in nano impression glue gravure structure (9) recess, by step 3) Described 1-dimention nano intaglio pattern is transferred on the flat substrate top layer (7) on functional material substrate (6) surface, prepares function Material 1-dimention nano pattern；Step 6) utilizes the gravure structure (9) for being etched away unnecessary nano impression glue.
- A kind of 2. high-resolution overlength 1-dimention nano pattern preparation method according to claim 1, it is characterised in that：It is described Not corrodible nano thin-film layer (2) and corrodible nanometer thin film layer (3) depositional mode for chemical vapor deposition, extension give birth to Length, electron-beam evaporation, ald, pulsed laser deposition or plasma sputter deposition；Not corrodible nano thin-film layer (2) and the material of corrodible nanometer thin film layer (3) is metal, semiconductor, metal oxide, polymeric material, wherein corrodible Nanometer thin film layer (3) can be corroded under certain etching condition, under this condition will not be by without corrodible nanometer thin film layer (2) Corrosion；Etching condition be liquid phase corrosives wet etching either plasma dry etching, corrodible nanometer thin film layer (3) corrosion depth is between 1-50000 nanometers.
- A kind of 3. high-resolution overlength 1-dimention nano pattern preparation method according to claim 1, it is characterised in that：It is described Flat substrate (1) be silicon chip, quartz plate, sheet glass, sheet metal or resin sheet.
- A kind of 4. high-resolution overlength 1-dimention nano pattern preparation method according to claim 1, it is characterised in that：It is described Flexible substrate (4) be silicone rubber plate, dimethyl silicone polymer, hard PDMS, polyolefin elastomer or flexible resin diaphragm.
- A kind of 5. high-resolution overlength 1-dimention nano pattern preparation method according to claim 1, it is characterised in that：It is described Nano impression glue (8) be the liquid prepolymer of UV curable or heat cure, or thermoplastic polymer.
- A kind of 6. high-resolution overlength 1-dimention nano pattern preparation method according to claim 1, it is characterised in that：It is described Step 4) be embossed to hot nano impression, heat cure nano impression or ultraviolet solidified nano impressing.
- A kind of 7. high-resolution overlength 1-dimention nano pattern preparation method according to claim 1, it is characterised in that：It is described The lithographic method of step 5) is plasma etching, ion beam etching, wet etching or electrochemical etching.
- A kind of 8. high-resolution overlength 1-dimention nano pattern preparation method according to claim 1, it is characterised in that：Step 3) the 1-dimention nano intaglio pattern described in is nanometer channel pattern, nanometer grating pattern, pattern line-width 1-50000 nanometers it Between, determined by the not corrodible nano thin-film layer (2) deposited and the thickness of corrodible nanometer thin film layer (3).
- A kind of 9. high-resolution overlength 1-dimention nano pattern preparation method according to claim 1, it is characterised in that：Step 3) length of the 1-dimention nano intaglio pattern described in is determined between 0.1-500 millimeters by the size of the flat substrate (1) deposited It is fixed.
- A kind of 10. high-resolution overlength 1-dimention nano pattern preparation method according to claim 1, it is characterised in that：Institute The material of the functional material substrate (6) for the step 5) stated is graphene film, molybdenum disulfide film, metal, monocrystalline silicon, polycrystalline Silicon, silica, glass, metal oxide, semi-conducting material, polymeric material or biological macromolecule material.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108528078A (en) * | 2018-04-11 | 2018-09-14 | 中山大学 | Nanostructure transfer method and the method for preparing multi-layer nano structure using stacking method |
| CN113415780A (en) * | 2021-06-18 | 2021-09-21 | 合肥工业大学 | Metal oxide nanofiber film material with one-dimensional ordered structure and preparation method thereof |
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| US6365059B1 (en) * | 2000-04-28 | 2002-04-02 | Alexander Pechenik | Method for making a nano-stamp and for forming, with the stamp, nano-size elements on a substrate |
| CN102544264A (en) * | 2012-01-19 | 2012-07-04 | 苏州锦元纳米科技有限公司 | Method for preparing nano pattern on sapphire substrate |
| CN103576447A (en) * | 2013-11-05 | 2014-02-12 | 无锡英普林纳米科技有限公司 | Fluorine-containing polymer ultraviolet nano-coining template and preparation method thereof |
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| US5772905A (en) * | 1995-11-15 | 1998-06-30 | Regents Of The University Of Minnesota | Nanoimprint lithography |
| US6365059B1 (en) * | 2000-04-28 | 2002-04-02 | Alexander Pechenik | Method for making a nano-stamp and for forming, with the stamp, nano-size elements on a substrate |
| CN102544264A (en) * | 2012-01-19 | 2012-07-04 | 苏州锦元纳米科技有限公司 | Method for preparing nano pattern on sapphire substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108528078A (en) * | 2018-04-11 | 2018-09-14 | 中山大学 | Nanostructure transfer method and the method for preparing multi-layer nano structure using stacking method |
| CN113415780A (en) * | 2021-06-18 | 2021-09-21 | 合肥工业大学 | Metal oxide nanofiber film material with one-dimensional ordered structure and preparation method thereof |
| CN113415780B (en) * | 2021-06-18 | 2024-01-30 | 合肥工业大学 | Metal oxide nanofiber thin film material with one-dimensional ordered structure and preparation method thereof |
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| CN107844027B (en) | 2023-01-06 |
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