CN107844027B - Preparation method of high-resolution ultralong one-dimensional nano pattern - Google Patents
Preparation method of high-resolution ultralong one-dimensional nano pattern Download PDFInfo
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- CN107844027B CN107844027B CN201710898222.3A CN201710898222A CN107844027B CN 107844027 B CN107844027 B CN 107844027B CN 201710898222 A CN201710898222 A CN 201710898222A CN 107844027 B CN107844027 B CN 107844027B
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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Abstract
A preparation method of a high-resolution super-long one-dimensional nano pattern is characterized by comprising the following steps: step 1) alternately depositing a non-corrodible nano film layer (2) and a corrodible nano film layer (3) on a flat substrate (1); and 2) cutting the flat substrate (1), the non-corrodible nano film layer (2) and the corrodible nano film layer (3), and selectively corroding the corrodible nano film layer (3) at the fracture to form a fall between the corrodible nano film layer and the non-corrodible nano film layer (2). The method can be applied to the preparation of various high-resolution super-long one-dimensional nano patterns, and the method has the advantages of high preparation resolution, simple process, high efficiency, low cost and capability of preparing the one-dimensional nano patterns on the surfaces of various functional materials and well meeting the actual requirements.
Description
Technical Field
The invention belongs to the technical field of nano-pattern preparation, and particularly relates to a preparation method of a high-resolution overlong one-dimensional nano-pattern.
Background
The one-dimensional nanometer pattern is used as a branch of the surface nanometer pattern and has wide application in the fields of optical elements, nanometer electronic devices and the like. Optical waveguides in optical elements, one-dimensional nano-gratings, nano-microchannels in microfluidic biochips, graphene nanoribbons in nanoelectronic devices, and the like are typical one-dimensional nano-patterns. These applications typically require one-dimensional nanopatterns with high resolution and large lengths. Therefore, the technology of preparing one-dimensional nano-patterns with high resolution and large length becomes a hot spot in the field of nanotechnology research. At present, the common methods for preparing one-dimensional nano-patterns on the surface of a substrate mainly include ink-jet printing technology, mechanical scribing technology, chemical self-assembly technology, block polymer phase separation technology, interference lithography technology, scanning probe direct writing technology, electron beam lithography technology, focused ion beam lithography technology and the like.
These methods all have certain disadvantages: the ink-jet printing technology and the mechanical scribing technology can prepare patterns with any size on the surfaces of various functional materials and have high efficiency, but the preparation resolution is not high, and the one-dimensional nano patterns with the line width below 100 nanometers are difficult to obtain. Direct writing such as scanning probe direct writing technology, electron beam lithography technology and focused ion beam lithography technology can freely prepare any one-dimensional nano pattern with high resolution, but the technologies generally have low working efficiency, expensive equipment and long preparation period. These direct writing methods generally require a smaller writing field to achieve better pattern quality when producing nanopatterns with smaller line widths. If the length of the one-dimensional nano-pattern to be processed is large, a plurality of writing-out patterns are needed to expose a part of the pattern respectively and then splice the part into a complete pattern. This requires a high degree of precision in the alignment equipment and the displacement device, thus increasing the cost of the equipment. Meanwhile, the method for splicing the patterns needs a plurality of splicing times and is long in time, and pattern splicing errors are inevitably generated, so that the quality of the patterns is influenced. Chemical self-assembly technology, block polymer phase separation technology and interference photoetching technology can prepare high-resolution one-dimensional nano patterns in large area and high efficiency at low cost, but the technologies can only prepare simple periodic one-dimensional nano array patterns generally and cannot realize the preparation of any one-dimensional nano pattern.
Disclosure of Invention
In view of the above circumstances, an object of the present invention is to provide a method for preparing a high resolution ultra-long one-dimensional nanopattern, which comprises preparing a flexible nanoimprint template from a one-dimensional nanopattern consisting of an etchable layer, an non-etchable layer and a flat substrate at a fracture of the flat substrate, and transferring the pattern to a functional material by using a nanoimprint technology.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a preparation method of a high-resolution super-long one-dimensional nano pattern is characterized by comprising the following steps:
step 1) alternately depositing a non-corrodible nano film layer (2) and a corrodible nano film layer (3) on a flat substrate (1);
step 2), cutting the flat substrate (1), the non-corrodible nano film layer (2) and the corrodible nano film layer (3), and selectively corroding the corrodible nano film layer (3) at the fracture to form a fall between the corrodible nano film layer and the non-corrodible nano film layer (2);
step 3) transferring the one-dimensional nano intaglio pattern formed by the fall between the non-corrodible nano film layer (2) and the corrodible nano film layer (3) obtained in the step 2) to the surface of a flexible substrate (4) to obtain a flexible nano imprinting template (5);
step 4), imprinting the gravure structure (9) of the nano-imprint glue, of which the one-dimensional nano-intaglio patterns correspond to the same ones in the step 3), on the nano-imprint glue (8) by using a flexible nano-imprint template (5);
step 5) selectively etching the concave part of the gravure structure (9) of the nanoimprint glue in the step 4), and transferring the one-dimensional nano intaglio pattern in the step 3) to the flat substrate top layer (7) on the surface of the functional material substrate (6) to prepare a one-dimensional nano pattern of the functional material;
and 6) removing the redundant gravure structure (9) of the nanoimprint glue by etching.
The deposition modes of the non-corrodible nano film layer (2) and the corrodible nano film layer (3) are chemical vapor deposition, epitaxial growth, electron beam evaporation deposition, atomic layer deposition, laser pulse deposition or plasma sputtering deposition; the non-corrodible nano film layer (2) and the corrodible nano film layer (3) are made of metal, semiconductor, metal oxide and polymer materials, wherein the corrodible nano film layer (3) can be corroded under certain corrosion conditions, and the non-corrodible nano film layer (2) cannot be corroded under the certain corrosion conditions; the etching condition is wet etching of a liquid phase etchant or dry etching of plasma, and the etching depth of the etchable nano film layer (3) is between 1 and 50000 nanometers.
The flat substrate (1) is a silicon wafer, a quartz plate, a glass plate, a metal plate or a resin plate.
The flexible substrate (4) is a silicon rubber sheet, polydimethylsiloxane, hard PDMS, polyolefin rubber or a flexible resin membrane.
The nano imprinting glue (8) is a liquid prepolymer capable of being cured by ultraviolet or heat, or a thermoplastic polymer.
The imprinting in the step 4) is thermal nano-imprinting, thermal nano-imprinting or ultraviolet curing nano-imprinting.
The etching method in the step 5) is plasma etching, ion beam etching, wet etching or electrochemical etching.
The one-dimensional nanometer intaglio patterns in the step 3) are nanometer groove patterns and nanometer grating patterns, the line width of the patterns is between 1 and 50000 nanometers and is determined by the thicknesses of the deposited non-corrodible nanometer film layer (2) and the corrodible nanometer film layer (3).
The length of the one-dimensional nano intaglio pattern in the step 3) is 0.1-500 mm, which is determined by the size of the deposited flat substrate (1).
The functional material substrate (6) in the step 5) is made of graphene film, molybdenum disulfide film, metal, monocrystalline silicon, polycrystalline silicon, silicon oxide, glass, metal oxide, semiconductor material, polymer material or biological macromolecule material.
The invention has the following beneficial effects:
the invention provides a preparation method of a high-resolution ultralong one-dimensional nano pattern, which has the following beneficial effects compared with the existing one-dimensional nano pattern preparation technology: the invention obtains the one-dimensional nanometer pattern at the fracture of the flat substrate by utilizing a thin film deposition technology and a wet etching technology, then transfers the pattern to the flexible substrate and transfers the pattern to the surface of the functional material through a nanometer impressing and etching technology. The preparation method can be used for the controllable preparation of various ultra-long one-dimensional nano patterns with high resolution because the appropriate film deposition can controllably prepare the thin films of the corrodible layer and the non-corrodible layer with small thickness and the nano imprinting technology can realize high-resolution pattern transfer. The preparation method has the advantages of short process period, strong applicability, low cost, long preparation length, high resolution and good repeatability.
Drawings
The invention is explained in more detail below with reference to the figures and examples:
fig. 1 is a schematic diagram of the preparation of a high-resolution ultra-long one-dimensional nano-groove pattern flexible template and the preparation of a high-resolution ultra-long one-dimensional monocrystalline silicon nano-waveguide pattern by using the flexible template according to an embodiment of the present invention.
The gravure printing structure comprises a flat substrate 1, a noncorrosive nano film layer 2, a corrodible nano film layer 3, a flexible substrate 4, a flexible nano imprinting template 5, a functional material substrate 6, a flat substrate top layer 7, 8 nano imprinting glue and 9 nano imprinting glue.
FIG. 2 is a scanning electron microscope image of a one-dimensional silicon nano-waveguide pattern prepared according to the present invention.
Detailed Description
The invention is explained in more detail below with reference to the figures and examples:
referring to fig. 1 to 2, a method for preparing a high resolution ultra-long one-dimensional nano pattern is characterized by comprising the following steps:
step 1) alternately depositing a non-corrodible nano film layer (2) and a corrodible nano film layer (3) on a flat substrate (1);
step 2), cutting the flat substrate (1), the non-corrodible nano film layer (2) and the corrodible nano film layer (3), and selectively corroding the corrodible nano film layer (3) at the fracture to form a fall between the corrodible nano film layer and the non-corrodible nano film layer (2);
step 3) transferring the one-dimensional nano intaglio pattern formed by the fall between the non-corrodible nano film layer (2) and the corrodible nano film layer (3) obtained in the step 2) to the surface of a flexible substrate (4) to obtain a flexible nano imprinting template (5);
step 4), imprinting the gravure structure (9) of the nano-imprint glue, of which the one-dimensional nano-intaglio patterns correspond to the same ones in the step 3), on the nano-imprint glue (8) by using a flexible nano-imprint template (5);
step 5) selectively etching the concave part of the gravure structure (9) of the nanoimprint glue in the step 4), and transferring the one-dimensional nano intaglio pattern in the step 3) to the flat substrate top layer (7) on the surface of the functional material substrate (6) to prepare a one-dimensional nano pattern of the functional material;
and 6) removing the redundant gravure structure (9) of the nano-imprint glue by etching.
The deposition modes of the non-corrodible nano film layer (2) and the corrodible nano film layer (3) are chemical vapor deposition, epitaxial growth, electron beam evaporation deposition, atomic layer deposition, laser pulse deposition or plasma sputtering deposition; the non-corrodible nano film layer (2) and the corrodible nano film layer (3) are made of metal, semiconductor, metal oxide and polymer materials, wherein the corrodible nano film layer (3) can be corroded under certain corrosion conditions, and the non-corrodible nano film layer (2) cannot be corroded under the certain corrosion conditions; the etching condition is wet etching of a liquid phase etchant or dry etching of plasma, and the etching depth of the etchable nano film layer (3) is between 1 and 50000 nanometers.
The flat substrate (1) is a silicon wafer, a quartz plate, a glass plate, a metal plate or a resin plate.
The flexible substrate (4) is a silicon rubber sheet, polydimethylsiloxane, hard PDMS, polyolefin rubber or a flexible resin membrane.
The nano imprinting glue (8) is a liquid prepolymer capable of being cured by ultraviolet or heat, or a thermoplastic polymer.
The imprinting in the step 4) is thermal nano-imprinting, thermal nano-imprinting or ultraviolet curing nano-imprinting.
The etching method in the step 5) is plasma etching, ion beam etching, wet etching or electrochemical etching.
The one-dimensional nanometer intaglio patterns in the step 3) are nanometer groove patterns and nanometer grating patterns, the line width of the patterns is between 1 and 50000 nanometers, and the line width is determined by the thicknesses of the deposited non-corrodible nanometer film layer (2) and the corrodible nanometer film layer (3).
The length of the one-dimensional nano intaglio pattern in the step 3) is 0.1-500 mm, and is determined by the size of the deposited flat substrate (1).
The functional material substrate (6) in the step 5) is made of graphene film, molybdenum disulfide film, metal, monocrystalline silicon, polycrystalline silicon, silicon oxide, glass, metal oxide, semiconductor material, polymer material or biological macromolecule material.
The functional material substrate 6 is an SOI (silicon on insulator) flat substrate; the top layer 7 of the flat substrate is SOI single crystal silicon.
The embodiment is as follows: the preparation method is described by taking specific preparation of one-dimensional silicon nano waveguide patterns as an example. The preparation method comprises the following steps:
(1) Alternately depositing a corrodible layer with nanometer thickness and a silicon oxide nanometer film on a flat substrate by plasma enhanced chemical vapor deposition.
(2) The flat substrate is cut open and the etchable layer is selectively etched to a depth of 200 nm at the fractures of the flat substrate with phosphoric acid.
(3) And transferring the one-dimensional nano waveguide pattern consisting of the corrodible layer at the fracture of the flat substrate, the silicon oxide and the flat substrate to the surface of the flexible substrate to obtain the flexible nano imprinting template.
(4) And (3) imprinting a one-dimensional nano waveguide pattern of nano imprinting glue corresponding to the template on the top-layer single crystal silicon layer of the SOI flat substrate by utilizing ultraviolet nano imprinting.
(5) The oxygen plasma is used to etch through the residual layer of the nanoimprint resist so that subsequent etching can directly etch to the single crystal silicon layer. .
(6) And transferring the pattern of the nano imprinting glue to the surface of the top monocrystalline silicon layer of the SOI flat substrate by utilizing reactive ion etching.
(7) And removing the redundant nano imprinting adhesive material by using oxygen plasma etching to obtain a one-dimensional silicon nano waveguide pattern (as shown in figure 2).
The above-mentioned embodiments are merely illustrative of the preferred embodiments of the present invention, and do not limit the concept and scope of the present invention, and various modifications and improvements made to the technical solutions of the present invention by those skilled in the art without departing from the design concept of the present invention shall fall within the protection scope of the present invention, and the technical contents of the present invention which are claimed are all described in the claims.
Claims (1)
1. A preparation method of a high-resolution super-long one-dimensional nano pattern is characterized by comprising the following steps:
step 1) alternately depositing a corrodible nano film and a silicon oxide nano film on a silicon wafer;
step 2) cutting the silicon wafer, and selectively corroding the corrodible nano film with a certain depth at the fracture of the silicon wafer by using phosphoric acid;
step 3) transferring one-dimensional nano patterns consisting of the corrodible nano films and the silicon oxide at the fracture of the silicon wafer to the surface of the flexible substrate to obtain a flexible nano imprinting template;
step 4) imprinting a one-dimensional nano pattern of nano imprinting glue corresponding to the template on the functional material substrate by using the flexible nano imprinting template;
step 5) transferring the pattern of the nanoimprint resist to the surface of the functional material substrate by etching to prepare a functional material one-dimensional nano pattern;
step 6), removing redundant nanoimprint lithography glue materials by etching; the deposition mode of the corrodible nano film and the silicon oxide nano film is chemical vapor deposition, epitaxial growth, electron beam evaporation deposition, atomic layer deposition, laser pulse deposition or plasma sputtering deposition; the corrosion depth of the corrodible nano film is between 1 and 50000 nanometers; the flexible substrate is a silicon rubber sheet, polydimethylsiloxane, polyolefin rubber or flexible resin membrane; the nano-imprint adhesive is a liquid prepolymer capable of being cured by ultraviolet or heat, or a thermoplastic polymer; the imprinting in the step 4) is thermal nanoimprint, thermal nanoimprint or ultraviolet curing nanoimprint;
the etching method is plasma etching, ion beam etching, wet etching or electrochemical etching;
the one-dimensional nanometer pattern is a nanometer groove pattern and a nanometer grating pattern, the line width of the pattern is between 1 and 50000 nanometers, and the line width is controlled by the thickness of the deposited corrodible nanometer film and the silicon oxide nanometer film;
the length of the one-dimensional nano pattern is between 0.1 and 500 millimeters and is controlled by the size of a deposited silicon wafer;
the functional material in the step 4) is graphene film, molybdenum disulfide film, metal, silicon oxide, glass, metal oxide, semiconductor material, polymer material and biological macromolecule material.
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| CN108528078B (en) * | 2018-04-11 | 2021-03-30 | 中山大学 | Nanostructure transfer printing method and method for preparing multilayer nanostructure by using stacking method |
| CN108415124A (en) * | 2018-05-08 | 2018-08-17 | 上海美维科技有限公司 | A kind of high density optical waveguide structure and printed circuit board and preparation method thereof |
| CN113415780B (en) * | 2021-06-18 | 2024-01-30 | 合肥工业大学 | Metal oxide nanofiber thin film material with one-dimensional ordered structure and preparation method thereof |
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| US5772905A (en) * | 1995-11-15 | 1998-06-30 | Regents Of The University Of Minnesota | Nanoimprint lithography |
| US6365059B1 (en) * | 2000-04-28 | 2002-04-02 | Alexander Pechenik | Method for making a nano-stamp and for forming, with the stamp, nano-size elements on a substrate |
| CN102544264A (en) * | 2012-01-19 | 2012-07-04 | 苏州锦元纳米科技有限公司 | Method for preparing nano pattern on sapphire substrate |
| CN103576447A (en) * | 2013-11-05 | 2014-02-12 | 无锡英普林纳米科技有限公司 | Fluorine-containing polymer ultraviolet nano-coining template and preparation method thereof |
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| US10153176B2 (en) * | 2016-03-09 | 2018-12-11 | Toshiba Memory Corporation | Manufacturing method of semiconductor device and template for nanoimprint |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5772905A (en) * | 1995-11-15 | 1998-06-30 | Regents Of The University Of Minnesota | Nanoimprint lithography |
| US6365059B1 (en) * | 2000-04-28 | 2002-04-02 | Alexander Pechenik | Method for making a nano-stamp and for forming, with the stamp, nano-size elements on a substrate |
| CN102544264A (en) * | 2012-01-19 | 2012-07-04 | 苏州锦元纳米科技有限公司 | Method for preparing nano pattern on sapphire substrate |
| CN103576447A (en) * | 2013-11-05 | 2014-02-12 | 无锡英普林纳米科技有限公司 | Fluorine-containing polymer ultraviolet nano-coining template and preparation method thereof |
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