CN109830430A - A kind of silicon nano hole structure and its preparation method and application that distribution area is controllable - Google Patents
A kind of silicon nano hole structure and its preparation method and application that distribution area is controllable Download PDFInfo
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- CN109830430A CN109830430A CN201910087024.8A CN201910087024A CN109830430A CN 109830430 A CN109830430 A CN 109830430A CN 201910087024 A CN201910087024 A CN 201910087024A CN 109830430 A CN109830430 A CN 109830430A
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Abstract
The invention discloses a kind of silicon nano hole structures and the preparation method and application thereof that distribution area is controllable.The preparation method includes the following steps: that S1. deposits Si in SOI both side surface3N4It is etched after nano thin-film, side forms silicon face, and the other side forms silicon substrate release window；S2. on the silicon face of S1 after deposited metal film, etching window is prepared, the metallic film of required shape is obtained；S3. etching S2 treated matrix, obtains silicon/metallic film double-layer structure；S4. it increases the selection area temperature of metallic film in step S3., forms the convex object of metal tip；S5. the metallic film and the convex object of metal tip for removing S4, obtain silicon nano hole structure.The present invention prepares metallic film on a silicon surface, realizes that the positioning of nano-pore is distributed by control heating region, i.e., distribution area is controllable and the adjusting of pore size.Moreover, the preparation method simple process, cost is relatively low, and production efficiency is higher.
Description
Technical field
The present invention relates to micro-nano device preparation and application technical field, controllable more particularly, to a kind of distribution area
Silicon nano hole structure and its preparation method and application.
Background technique
In nearest decades, quantum dot (i.e. semiconductor nanocrystal) due to its unique electronics and luminosity,
It is widely used in fields such as biomarker, light emitting diode, laser and solar batteries, and has been increasingly becoming everybody
Focus of attention.Quantum dot has incomparable luminescent properties, by adjusting different sizes, can obtain different transmitted waves
Long quantum dot, narrow and symmetrical fluorescent emission make quantum dot become a kind of ideal multi-color marking material.
Quantum dot studies basic physics, novel electron and photoelectric device all have very important significance, quanta point material
Growth and device application study are always one of hot spot of scientific circles.Silicon quantum dot is as a kind of typical semiconductor nano material
Material, compared to other quantum dots, exclusive surface modificability, nontoxicity and biocompatibility, in biology, medical domain tool
There is potential application, has attracted the concern of many scholars.
In preparation method, common epitaxial growth method is to obtain the commonplace method of high-quality semiconductor quantum dot,
But be all to carry out under high vacuum or ultrahigh vacuum to the growth of semiconductor-quantum-point, so that Material growth cost is very high；
Although the purity is high of quantum dot prepared by chemical corrosion method, superior performance, due to the anisotropy of corrosion, quantum dot material
The size of material is very uneven, and the chemical liquid used causes certain pollution to environment.The prior art
CN107416762A discloses a kind of silicon nano hole structure and preparation method thereof, but the production method cannot achieve silicon nano hole
Positioning distribution.
Accordingly, it is desirable to provide a kind of preparation method for the silicon nano hole structure that distribution area is controllable.
Summary of the invention
The present invention is the defect for overcoming silicon nano hole described in the above-mentioned prior art to cannot achieve positioning distribution, provides one kind
The preparation method of the controllable silicon nano hole structure of distribution area, the preparation method provided realize the positioning distribution of silicon nano hole,
I.e. distribution area is controllable and the adjusting of pore size, and simple process, and cost is relatively low, and production efficiency is higher.
Another object of the present invention is to provide silicon nano hole structures obtained by above-mentioned preparation method.
A further purpose of the present invention is to provide above-mentioned silicon nano hole structure to prepare the application in photoelectric device.
In order to solve the above technical problems, the technical solution adopted by the present invention is that:
A kind of preparation method for the silicon nano hole structure that distribution area is controllable, includes the following steps:
S1. Si is deposited in SOI both side surface3N4It is etched after nano thin-film, side forms silicon face, and the other side forms silicon substrate
Release window；
S2. on the silicon face of S1 after deposited metal film, etching window is prepared, the metallic film of required shape is obtained；
S3. etching S2 treated matrix, obtains silicon/metallic film double-layer structure；
S4. it increases the selection area temperature of metallic film in step S3., forms the convex object of metal tip；
S5. the metallic film and the convex object of metal tip for removing S4, obtain silicon nano hole structure.
The present invention is used as matrix with the silicon wafer (Silicon On Insulator, SOI) in insulating substrate, in matrix two sides
Surface respectively deposits low stress Si3N4Nano thin-film.Etch Si3N4Nano thin-film, wherein side forms silicon face, and the other side is formed
Silicon substrate release window.It is etched after preparing the metallic film of required shape on a silicon surface, obtains silicon/metallic film bilayer knot
Then structure increases selection area temperature by controlling heating region, silicon atom will penetrate into metallic film, and metallic film
In metal can diffuse into silicon, formed the convex object of metal tip；During removing metallic film and its convex object of metal tip are distributed in
The silicon nano hole structure of portion's heating tape.
The present invention is controlled the distributing position of silicon nano hole in middle part fever region by control heating region, thus
The positioning distribution of silicon nano hole is realized, i.e., distribution area is controllable.And silicon nano hole can be adjusted by control the degree of heat
Pore size, the present invention provides a kind of novel method for preparing template to prepare quantum dot.In addition, preparation method of the invention
Simple process, cost is relatively low, and production efficiency is higher.Nano-pore structure obtained has preferable scalability, while can repeat to follow
Ring uses, and has wider prospect of the application in photoelectric device preparation field.
Preferably, it is deposited in step S1 using Low Pressure Chemical Vapor Deposition (LP-CVD).
Preferably, Si described in step S13N4Nano thin-film with a thickness of 20 ~ 200 nm.It is highly preferred that institute in step S1
State Si3N4Nano thin-film with a thickness of 100 nm.
Preferably, the top layer silicon of SOI described in step S1 is with a thickness of 20 ~ 500 nm.It is highly preferred that described in step S1
The top layer silicon of SOI is with a thickness of 200 nm.
Preferably, etching described in step S1 is that reactive ion etching or phosphoric acid solution etch.It is highly preferred that in step S1
The etching is reactive ion etching.
Preferably, the size of silicon substrate release window described in step S1 is 400 400 μm ~ 2000 μ m of μ m, 2000 μ
m.It is highly preferred that the size of silicon substrate release window described in step S1 is 700 μm of 700 μ m.
Preferably, the forming process of silicon substrate release window described in step S1 are as follows: in Si3N4Nano thin-film applies on surface
50nm ~ 1 μm photoresist is covered, opening is formed by photolithography patterning photoresist later, then etch using reactive ion etching method
Be open Si below3N4Nano thin-film forms silicon substrate release window.
Preferably, metallic film described in step S2 is aluminium film or gold thin film.It is highly preferred that metal described in step S2
Film is aluminium film.
Preferential the reason of selecting aluminium film, is that at high temperature, silicon atom has more considerable solid solubility in aluminium, and
And in certain temperature range, as temperature increases, apparent variation occurs for solubility, it is easier to according to heating and temperature control silicon
Solubility of the atom in aluminium, to control the depth of the convex object of metal tip.
Preferably, metallic film described in step S2 with a thickness of 100nm ~ 2 μm.It is highly preferred that gold described in step S2
Belong to film with a thickness of 1 μm.
Preferably, deposition described in step S2 uses electron beam evaporation method, magnetron sputtering method or atomic layer deposition.More preferably
Ground, deposition described in step S2 use electron beam evaporation method.
Preferably, the preparation process of the metallic film of required shape described in step S2 specifically: on the silicon face of S1
After deposited metal film, in metal film surfaces spin coating photoresist, photoresist is exposed using uv-exposure technology, is developed
After form etching window, obtain the metallic film of required shape.
Preferably, the preparation process of the metallic film of required shape described in step S2 can be with are as follows: in the silicon face of S1
After spin coating photoresist, photoresist is exposed using uv-exposure technology, the photoresist of required shape is obtained after development, then
Deposited metal film on a photoresist obtains the metallic film of required shape.
Using spin coating technique, it is primarily due to spin coating and is easily obtained the biggish coating of density, coating layer thickness is relatively uniform.
Preferably, photoresist described in step S2 with a thickness of 50nm ~ 1 μm.It is highly preferred that photoresist described in step S2
With a thickness of 500nm.
Preferably, the preparation of the metallic film of required shape described in step S2 further includes etching metallic film, removal light
The step of photoresist.
Preferably, photoresist is removed using stripping technology in step S2.
Preferably, etching described in step S2 is ion beam etching.
Preferably, the specific steps of etching described in step S3 are as follows: first etch silicon substrate, then benefit using alkaline solution single side
With reactive ion etching technology back-etching silicon dioxide layer.
Preferably, alkaline solution described in step S3 is KOH or tetramethylammonium hydroxide TMAH.It is highly preferred that step S3
Described in alkaline solution be KOH.Preferably, the concentration of the KOH is 30%.
The raised method of middle section temperature for making metallic film in step S4, can be to directly heat, can also pass through
Applying voltage makes its own fever, to form the convex object of metal tip.
Preferably, the raised method of middle section temperature that metallic film is made in step S4, adds metallic film
Heat.
Metallic film is intermediate shape narrow, both ends are wide in step S2.The centre of the metallic film is relatively narrow, after heating in
Between partially generate heat, as heating tape.At this point, selection area is middle part fever region.The heating tape width range is 5 ~ 50
μm, the width range with heating tape coupling part (i.e. both ends) is 100 ~ 800 μm.The method can under identical heating time,
The size of heating temperature is adjusted, solubility of the silicon atom in aluminium is controlled, to control the depth of the convex object of metal tip.Pass through control
The size of silicon nano hole diameter is adjusted in the depth of the convex object of metal tip.
Preferably, heating temperature described in step S4 is 100 ~ 800 °C.It is highly preferred that heating temperature described in step S4
It is 500 °C.Heating time can be 30min.
Preferably, the depth of the convex object of metal tip described in step S4 is 50 nm ~ 1 μm.It is highly preferred that described in step S4
The depth of the convex object of metal tip is 350 nm.
Preferably, it is removed in step S5 using strong acid or strong base solution corrosion.Preferably, the highly basic is hydroxide
Sodium solution.
The present invention protects silicon nano hole structure made from above-mentioned preparation method simultaneously.
The present invention also protects above-mentioned silicon nano hole structure preparing the application in photoelectric device.
The present invention also protects above-mentioned silicon nano hole structure in biomarker, light emitting diode, laser or solar battery
Application.
Compared with prior art, the beneficial effects of the present invention are:
The present invention etches after preparing the metallic film of required shape on a silicon surface, obtains silicon/metallic film double-layer structure, then
Selection area temperature is increased, the distributing position of silicon nano hole is controlled in selection area, to realize silicon nano hole
Positioning distribution, i.e., distribution area is controllable.And the pore size that silicon nano hole can be adjusted by control the degree of heat, thus real
The preparation of existing different energy level quantum dots.As it can be seen that the present invention realizes the adjusting of the positioning distribution and pore size of silicon nano hole.This
Outside, the preparation method simple process of silicon nano hole structure provided by the invention, cost is relatively low, and production efficiency is higher.
Detailed description of the invention
Fig. 1 is the process flow chart of preparation method in embodiment 1.
Fig. 2 is the schematic diagram of the required silicon substrate SOI of the present invention.
Fig. 3 is the structural schematic diagram presented in 1 step S2 of embodiment.
Fig. 4 is the structural schematic diagram presented in 1 step S3 of embodiment.
Fig. 5 is the structural schematic diagram presented in 1 step S4 of embodiment.
Fig. 6 is the structural schematic diagram presented in 1 step S5 of embodiment.
Fig. 7 is the structural schematic diagram presented in 1 step S6 of embodiment.
Fig. 8 is the structural schematic diagram presented in 1 step S6 of embodiment.
Fig. 9 is the partial top view presented in 1 step S6 of embodiment.
Figure 10 is the structural schematic diagram presented in 2 step S5 of embodiment.
Figure 11 is the structural schematic diagram presented in 2 step S5 of embodiment.
Figure 12 is the structural schematic diagram presented in 2 step S6 of embodiment.
Figure 13 is the structural schematic diagram presented in 2 step S6 of embodiment.
Figure 14 is the partial top view presented in 2 step S7 of embodiment 1 and embodiment.
Figure 15 is the structural schematic diagram presented in 2 step S8 of embodiment 1 and embodiment.
Figure 16 is the structural schematic diagram presented in 2 step S9 of embodiment 1 and embodiment.
Figure 17 is the structural schematic diagram presented in 2 step S10 of embodiment 1 and embodiment.
Figure 18 is the structural schematic diagram presented in 2 step S11 of embodiment 1 and embodiment.
Component label instructions: 1, matrix, 10, top layer silicon, 11, SiO2, 12, silicon substrate, 100, silicon nano hole, 110, SiO2
Window, 120, etching groove, 2, Si3N4Nano thin-film, 20, top layer Si3N4Nano thin-film, 21, bottom Si3N4Nano thin-film, 210,
Silicon substrate release window, 3, metallic film, 30, the convex object of metal tip, 4, photoresist, 40, etching window.
Specific embodiment
The invention will be further described With reference to embodiment, but embodiments of the present invention are not limited to
This.Raw material in embodiment can be by being commercially available；Unless stated otherwise, the present invention uses reagent, method and apparatus for
The art conventional reagent, method and apparatus.
Please refer to attached drawing 1 ~ 15.It should be noted that diagram provided in embodiment only illustrates this hair in a schematic way
Bright basic conception, only shown in schema then with related component in the present invention rather than component count when according to actual implementation,
Shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its component
Being laid out kenel may also be increasingly complex.
Embodiment 1
A kind of preparation method for the silicon nano hole structure that distribution area is controllable, includes the following steps:
S1., silicon wafer (SOI) in insulating substrate is provided and is used as matrix, matrix includes top layer silicon 10, silicon dioxide layer 11 and silicon lining
Bottom 12；Wherein, top layer silicon 10 with a thickness of 200 nm.As shown in Figure 2.
S2. the Si of 100 nm is respectively deposited in matrix both side surface using Low Pressure Chemical Vapor Deposition3N4Nano thin-film 2；
As shown in figure 3, being Si in matrix side3N4Nano thin-film 20, other side Si3N4Nano thin-film 21.
S3. Si is etched using reactive ion etching method3N4Nano thin-film 20 forms silicon face, Si3N4Nano thin-film 20
It is etched completely；As shown in Figure 4.
S4. in Si3N4500nm photoresist is coated on 21 surface of nano thin-film, passes through photolithography patterning photoresist shape later
At opening, then the Si for selecting open area is etched using reactive ion etching method3N4Nano thin-film 21 is formed having a size of 700 μm
× 700 μm of silicon substrate release windows 210, as shown in Figure 5.
S5. one layer of 1 μm of aluminium film 3 is deposited in silicon face using electron beam evaporation method；As shown in Figure 6.
S6. in aluminium film 3 surface spin coating, one layer of 500nm photoresist 4, as shown in fig. 7, recycling uv-exposure technology pair
Photoresist 4 is exposed, and the etching window 40 of required shape is obtained after development；As shown in Figure 8；Partial top view is as shown in Figure 9.
S7. ion beam etching aluminium film 3 is used, obtains the aluminium film 3 of required shape after removing photoresist；Middle part is wide
Degree is micron-sized heating tape, and that be connected with heating tape is the wider electrode connecting portion in both ends point, partial top view such as Figure 14
Show.
S8. it etches the silicon substrate release window 210 to be formed using step S4 to be discharged, the KOH for the use of concentration being 30%
Solution single side etches silicon substrate, forms etching groove 120, as shown in figure 15；
S9. 10/ aluminium film of silicon, 3 double-layer structure is obtained using reactive ion etching technology back-etching silicon dioxide layer 11；Such as figure
Shown in 16.
S10. in 10 both ends making alive of top layer silicon, so that middle part heating tape generates heat, silicon atom will be penetrated into aluminium film,
So that the middle part heating tape that width is 20 μm generates heat, silicon atom will be penetrated into aluminium film, and the aluminium in aluminium film can diffuse into
Enter in top layer silicon 10, forms the convex object 30 of metal tip that depth is 350 nm；As shown in figure 17.
S11. corrode aluminium film 3 and its convex object 30 of metal tip with sodium hydroxide solution, obtain being distributed in middle part heating tape
Silicon nano hole structure 100；As shown in figure 18.The aperture of silicon nano hole structure obtained is 100nm.
Embodiment 2
A kind of preparation method for the silicon nano hole structure that distribution area is controllable, includes the following steps:
S1. ~ S4. is same as Example 1.
S5. in one layer of 500nm photoresist 4 of silicon face spin coating, as shown in Figure 10, using uv-exposure technology to photoresist 4
It is exposed, the photoresist 4 of required shape is obtained after development, as shown in figure 11.
S6. one layer of 1 μm of aluminium film 3 is deposited on photoresist 4 using electron beam evaporation method；As shown in figure 12, left view is such as
Shown in Figure 13.
S7. stripping technology stripping photoresist 4 is utilized, the aluminium film 3 of required shape is obtained；Middle part is that width is micron order
Heating tape, what is be connected with heating tape is the wider electrode connecting portion in both ends point, and partial top view such as Figure 14 shows.
S8 ~ S11. is same as Example 1.The positioning distribution of silicon nano hole structure obtained and aperture and 1 phase of embodiment
Together.
Embodiment 3
The present embodiment the difference from embodiment 1 is that, the metallic film of the present embodiment is gold thin film, step S10 in the present embodiment
In, make the raised method of middle section temperature of metallic film, metallic film is heated, temperature is 500 °C, when heating
Between be 30min；So that middle part heating tape generates heat, silicon atom will be penetrated into gold thin film, and the gold in gold thin film can diffuse into
In top layer silicon, the convex object of metal tip is formed；The depth of the convex object of metal tip be 200nm, top layer silicon 10 with a thickness of 150 nm；
Other raw material dosages and operating procedure are same as Example 1.The aperture of silicon nano hole structure obtained is 50 nm.
Embodiment 4
The present embodiment the difference from embodiment 1 is that, change and apply voltage swing, the depth of the convex object of the metal tip of the present embodiment is
500nm；
Other raw material dosages and operating procedure are same as Example 1.The aperture of silicon nano hole structure obtained is 150 nm.
It follows that embodiment 1 ~ 5 provide preparation method may be implemented silicon nano hole positioning distribution and aperture it is big
Small adjusting.Also, the preparation method simple process of silicon nano hole structure provided by the invention, cost is relatively low, and produces effect
Rate is higher.
Obviously, the above embodiment of the present invention be only to clearly illustrate example of the present invention, and not be pair
The restriction of embodiments of the present invention.For those of ordinary skill in the art, may be used also on the basis of the above description
To make other variations or changes in different ways.There is no necessity and possibility to exhaust all the enbodiments.It is all this
Made any modifications, equivalent replacements, and improvements etc., should be included in the claims in the present invention within the spirit and principle of invention
Protection scope within.
Claims (10)
1. a kind of preparation method for the silicon nano hole structure that distribution area is controllable, which comprises the steps of:
S1. Si is deposited in SOI both side surface3N4It is etched after nano thin-film, side forms silicon face, and the other side forms silicon substrate and releases
Put window；
S2. on the silicon face of S1 after deposited metal film, etching window is prepared, the metallic film of required shape is obtained；
S3. etching S2 treated matrix, obtains silicon/metallic film double-layer structure；
S4. it increases the selection area temperature of metallic film in step S3., forms the convex object of metal tip；
S5. the metallic film and the convex object of metal tip for removing S4, obtain silicon nano hole structure.
2. preparation method according to claim 1, which is characterized in that metallic film described in step S2 is aluminium film or gold
Film.
3. preparation method according to claim 1, which is characterized in that metallic film described in step S2 with a thickness of 50 ~
500nm。
4. preparation method according to claim 1, which is characterized in that the depth of the convex object of metal tip described in step S4 is 50
nm~1 μm。
5. preparation method according to claim 1, which is characterized in that the metallic film of required shape described in step S2
Preparation process specifically: on the silicon face of S1 after deposited metal film, in metal film surfaces spin coating photoresist, utilization is ultraviolet
Exposure technique is exposed photoresist, and etching window is formed after development, obtains the metallic film of required shape.
6. preparation method according to claim 1, which is characterized in that the metallic film of required shape described in step S2
Preparation process are as follows: after the silicon face spin coating photoresist of S1, photoresist is exposed using uv-exposure technology, after development
To the photoresist of required shape, then deposited metal film on a photoresist, obtains the metallic film of required shape.
7. preparation method according to claim 5 or 6, which is characterized in that the photoresist with a thickness of 50nm ~ 1 μm.
8. preparation method according to claim 5 or 6, which is characterized in that the metal foil of required shape described in step S2
The preparation of film further includes the steps that etching metallic film, removal photoresist.
9. silicon nano hole structure made from the described in any item preparation methods of claim 1 ~ 8.
10. silicon nano hole structure as claimed in claim 9 is preparing the application in photoelectric device.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6150243A (en) * | 1998-11-05 | 2000-11-21 | Advanced Micro Devices, Inc. | Shallow junction formation by out-diffusion from a doped dielectric layer through a salicide layer |
| US20140083493A1 (en) * | 2012-09-27 | 2014-03-27 | Xi Zhu | Conductive contact for solar cell |
| CN107416762A (en) * | 2017-05-16 | 2017-12-01 | 广东工业大学 | A kind of silicon nano hole structure and preparation method thereof |
-
2019
- 2019-01-29 CN CN201910087024.8A patent/CN109830430B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6150243A (en) * | 1998-11-05 | 2000-11-21 | Advanced Micro Devices, Inc. | Shallow junction formation by out-diffusion from a doped dielectric layer through a salicide layer |
| US20140083493A1 (en) * | 2012-09-27 | 2014-03-27 | Xi Zhu | Conductive contact for solar cell |
| CN107416762A (en) * | 2017-05-16 | 2017-12-01 | 广东工业大学 | A kind of silicon nano hole structure and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 袁志山等: "《SiN薄膜纳米孔芯片制造工艺实验研究》", 《东南大学学报(自然科学版)》 * |
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