CN109809712A - Asymmetric class double-silver LOW-E glass of phosphorus doping self-cleaning and preparation method thereof - Google Patents
Asymmetric class double-silver LOW-E glass of phosphorus doping self-cleaning and preparation method thereof Download PDFInfo
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- CN109809712A CN109809712A CN201910237896.8A CN201910237896A CN109809712A CN 109809712 A CN109809712 A CN 109809712A CN 201910237896 A CN201910237896 A CN 201910237896A CN 109809712 A CN109809712 A CN 109809712A
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- 239000011521 glass Substances 0.000 title claims abstract description 105
- 238000004140 cleaning Methods 0.000 title claims abstract description 41
- 239000004332 silver Substances 0.000 title claims abstract description 33
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 33
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 229910052698 phosphorus Inorganic materials 0.000 title claims abstract description 28
- 239000011574 phosphorus Substances 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims abstract description 80
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910001120 nichrome Inorganic materials 0.000 claims abstract description 26
- ZFHSIBJQGYOTQN-UHFFFAOYSA-N oxygen(2-) phosphane titanium(4+) Chemical compound [O-2].[O-2].[Ti+4].P ZFHSIBJQGYOTQN-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 13
- 239000002131 composite material Substances 0.000 claims abstract description 13
- 229910007696 ZnSnO4 Inorganic materials 0.000 claims abstract description 12
- 238000007789 sealing Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 9
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000007789 gas Substances 0.000 claims description 69
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 54
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 45
- 229910052786 argon Inorganic materials 0.000 claims description 27
- 230000001681 protective effect Effects 0.000 claims description 27
- 238000004544 sputter deposition Methods 0.000 claims description 26
- 229910003087 TiOx Inorganic materials 0.000 claims description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 claims description 15
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 15
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 12
- 239000005348 self-cleaning glass Substances 0.000 claims description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 239000011787 zinc oxide Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 claims description 3
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims description 3
- 238000005096 rolling process Methods 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- 238000005496 tempering Methods 0.000 claims description 3
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 105
- 238000009413 insulation Methods 0.000 description 8
- 238000004321 preservation Methods 0.000 description 4
- 239000002346 layers by function Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 239000005329 float glass Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000003017 phosphorus Chemical class 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910007717 ZnSnO Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004566 building material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- Surface Treatment Of Glass (AREA)
Abstract
This application discloses the asymmetric class double-silver LOW-E glass of phosphorus doping self-cleaning, the second glass substrate including the first glass substrate and on rear side of first glass substrate, it is equipped with hollow sealing chamber between first glass substrate and second glass substrate, first glass substrate includes substrate glass substrate and the TiO that is set in turn on rear side of the substrate glass substratexFilm layer, the first AZO film layer, Cu film layer, the first NiCr film layer, ZnSnO4Film layer, the 2nd AZO film layer, Ag film layer, the 2nd NiCr film layer, Si3N4Film layer, and the phosphorus titanium dioxide composite film layer on the substrate glass substrate front side.The application not only has the outstanding features such as low-E, high transparency, and also has visible light-responded self-cleaning net effect, to can not only greatly reduce the wash number of glass curtain wall, and production cost can also be greatly lowered.Disclosed herein as well is a kind of methods for preparing the asymmetric class double-silver LOW-E glass of phosphorus doping self-cleaning.
Description
[technical field]
This application involves the technical field of coated glass, in particular to a kind of asymmetric class of phosphorus doping self-cleaning is double
Silver-colored LOW-E glass and a kind of method for preparing the asymmetric class double-silver LOW-E glass of phosphorus doping self-cleaning.
[background technique]
It is special also to possess good LOW-E hollow glass while guaranteeing has good daylighting for LOW-E hollow glass
Property, such as heat-insulation and heat-preservation, sound insulation, the prominent characteristics such as antiultraviolet, meanwhile, LOW-E hollow glass will not also generate " light pollution ",
It is the glass building material of green truly, energy-saving and environmental protection.
But existing LOW-E hollow glass working service difficulty is larger, needs periodically to clean glass, especially
The cleaning problem of high-rise glass curtain wall, the work of even more one high-risk, for this purpose, those skilled in the art need to research and develop a kind of energy
The LOW-E hollow glass of self-cleaning.
[summary of the invention]
The application to be solved to be the above-mentioned existing technical problem being directed to, and provides a kind of asymmetric class of phosphorus doping self-cleaning
Double-silver LOW-E glass.
In order to solve the above technical problems, the application is achieved through the following technical solutions:
The asymmetric class double-silver LOW-E glass of phosphorus doping self-cleaning, including the first glass substrate and be set to first glass
The second glass substrate on rear side of substrate is equipped with hollow sealing chamber, institute between first glass substrate and second glass substrate
Stating the first glass substrate includes substrate glass substrate and the TiOx film layer being set in turn on rear side of the substrate glass substrate, the
One AZO film layer, Cu film layer, the first NiCr film layer, ZnSnO4Film layer, the 2nd AZO film layer, Ag film layer, the 2nd NiCr film layer, Si3N4
Film layer, and the phosphorus titanium dioxide composite film layer on the substrate glass substrate front side.
The asymmetric class double-silver LOW-E glass of phosphorus doping self-cleaning as described above, the phosphorus titanium dioxide composite film thickness
Degree is 80~120nm.
The asymmetric class double-silver LOW-E glass of phosphorus doping self-cleaning as described above, the TiOx thicknesses of layers is 20~
45nm。
The asymmetric class double-silver LOW-E glass of phosphorus doping self-cleaning as described above, the Cu thicknesses of layers are 8~10nm.
The asymmetric class double-silver LOW-E glass of phosphorus doping self-cleaning as described above, the ZnSnO4Thicknesses of layers be 50~
85nm。
The asymmetric class double-silver LOW-E glass of phosphorus doping self-cleaning as described above, the first AZO film layer and described second
The thickness of AZO film layer is 300~500nm.
The asymmetric class double-silver LOW-E glass of phosphorus doping self-cleaning as described above, the Ag thicknesses of layers are 8~10nm.
The asymmetric class double-silver LOW-E glass of phosphorus doping self-cleaning as described above, the first NiCr film layer and described the
Two NiCr thicknesses of layers are 3~5nm.
The asymmetric class double-silver LOW-E glass of phosphorus doping self-cleaning as described above, the Si3N4Thicknesses of layers be 50~
85nm。
The application also provides a kind of method for preparing the asymmetric class double-silver LOW-E glass of phosphorus doping self-cleaning, including following
Step:
30~100ml butyl titanate is dissolved in by 200ml dehydrated alcohol and 20~30mlH by S12O2The original being mixed into is molten
In liquid, 30min is stirred, instills 40ml deionized water, obtained solution one；
S2, by 10~20ml acetylacetone,2,4-pentanedione, 20~30mlHNO3It is added to solution one, is heated to 40 DEG C therewith, is stirred for
30min, obtained solution two；
S3, by 6~20mlH3PO4It is added to solution two, is heated to 80 DEG C therewith, is stirred for 2h, obtained solution three；
Solution three is put into the stainless steel autoclave with polytetrafluoroethyllining lining by S4, is heated to 135 DEG C therewith, pressure
3~4bar of power stirs 2h, obtained solution four；
S5, filtering solution four produce 5% p-doped TiO2Solution；
S6, with rolling method by 5% p-doped TiO2On on front side of solution coating to the substrate glass substrate；
S7, by coated 5% p-doped TiO2The substrate glass substrate of solution is put into tempering in annealing furnace, so as to be formed
Phosphorus titanium dioxide composite film layer, and then toughening self-cleaning glass is made；
S8, clean toughening self-cleaning glass it is non-it is self-cleaning wash one's face, and it is to be cleaned after convey into magnetron sputtering coater；
S9, magnetron sputtering TiOx film layer, AC power source sputtering, Ar gas, O2Gas is as protective gas, magnetron sputtering titanium oxide
Target TiOx (x=1.7~1.9), argon carrier of oxygen flow-rate ratio are 800SCCM:40SCCM；
S10, the first AZO film layer of magnetron sputtering, AC power source sputtering, Ar gas, O2Gas is mixed as protective gas, magnetron sputtering
Aluminum zinc oxide target (ZnO:Al=92:8), argon carrier of oxygen flow-rate ratio are 1000SCCM:40SCCM；
S11, magnetron sputtering C u film layer, DC power supply sputtering, Ar gas are used as protective gas, argon flow for 500~
550SCCM；
S12, (15, DC power supply sputters the first NiCr film layer of magnetron sputtering, and Ar gas is as protective gas, argon flow
500~550SCCM；
S13, magnetron sputtering ZnSnO4Film layer, AC power source sputtering, Ar gas, O2Gas is as protective gas, magnetron sputtering zinc-tin
Target (Zn:Sn=50:50), argon carrier of oxygen flow-rate ratio are 400SCCM:600SCCM；
S15, the 2nd AZO film layer of magnetron sputtering, AC power source sputtering, Ar gas, O2Gas is mixed as protective gas, magnetron sputtering
Aluminum zinc oxide target (ZnO:Al=92:8), argon carrier of oxygen flow-rate ratio are 1000SCCM:40SCCM；
S16, magnetron sputtering Ag film layer, DC power supply sputtering, Ar gas are used as protective gas, argon flow for 500~
550SCCM；
S17, the 2nd NiCr film layer of magnetron sputtering, DC power supply sputtering, Ar gas is as protective gas, argon flow 500
~550SCCM；
S18, magnetron sputtering Si3N4Film layer, AC power source sputtering, Ar gas, O2Gas is as protective gas, magnetron sputtering sial
Target (Si:Al=92:8), argon carrier of oxygen flow-rate ratio are 400SCCM:600SCCM；
S19, when step S18 is completed, toughening self-cleaning glass forms first glass substrate, takes out described the therewith
One glass substrate, and bonded with second glass substrate, and make between first glass substrate and second glass substrate
It is formed with the hollow sealing chamber, and then completes preparation work.
Compared with prior art, above-mentioned application has the following advantages:
1, the application passes through the TiOx film layer and the first AZO film layer, the Cu film layer, the first NiCr film
Layer, the ZnSnO4Film layer, the 2nd AZO film layer, the Ag film layer, the 2nd NiCr film layer and the Si3N4Film layer phase
In conjunction with to form asymmetric class double-silver LOW-E film layer structure, and first layer Ag layers is replaced by the Cu film layer, then makes this Shen
Please not only there is low-E, high transparency, and production cost can also be greatly lowered, while is multiple by the phosphorus titanium dioxide
Closing film layer makes the application have visible light-responded self-cleaning net effect, so as to greatly reduce the wash number of glass curtain wall,
In addition, can also make the application that there are the prominent characteristics such as heat-insulation and heat-preservation, sound insulation by the hollow sealing chamber, enriched in very big limit
The functional characteristic of the application, and then can be satisfied with more and more use demands.
2, the application is by using 5% p-doped TiO2Solution coating is upper described in formation on front side of the substrate glass substrate
Phosphorus titanium dioxide composite film layer so that the anatase for cylindrical directional profile occur is brilliant, thus be conducive to light 380~
Response in 780nm wave band, and then can make the application that there is excellent energy-saving effect, and also there is good self-cleaning net effect.
3, the application not only has excellent energy-saving effect, and also has visible light transmittance 40~70%, and infrared ray is saturating
Rate is crossed less than 10%, heat transfer coefficient is less than 1.7, and shading coefficient is less than 0.4, and radiance is less than 0.05 equal outstanding properties.
[Detailed description of the invention]
Fig. 1 is the schematic diagram of the asymmetric class double-silver LOW-E glass of the application phosphorus doping self-cleaning.
[specific embodiment]
The application is described in further detail below by specific embodiment combination attached drawing.
As shown on Fig. 1, the asymmetric class double-silver LOW-E glass of phosphorus doping self-cleaning, including the first glass substrate 1 and be set to
Second glass substrate 2 of 1 rear side of the first glass substrate, sets between first glass substrate 1 and second glass substrate 2
There is hollow sealing chamber 3, first glass substrate 1 includes substrate glass substrate 10 and is set in turn in the substrate glass substrate
TiOx film layer 12, the first AZO film layer 13, Cu film layer 14, the first NiCr film layer 15, ZnSnO on 10 rear sides4Film layer 16, second
AZO film layer 17, Ag film layer 18, the 2nd NiCr film layer 19, Si3N4Film layer 20, and be set on 10 front side of substrate glass substrate
Phosphorus titanium dioxide composite film layer 11.
The application passes through the TiOx film layer 12 and the first AZO film layer 13, the Cu film layer 14, the first NiCr
Film layer 15, the ZnSnO4Film layer 16, the 2nd AZO film layer 17, the Ag film layer 18, the 2nd NiCr film layer 19 and institute
State Si3N4Film layer 20 combines to form asymmetric class double-silver LOW-E film layer structure, and replaces first layer by the Cu film layer 14
Ag layers, then making the application not only has low-E, high transparency, and production cost can also be greatly lowered, and leads to simultaneously
Crossing the phosphorus titanium dioxide composite film layer 11 makes the application have visible light-responded self-cleaning net effect, so as to greatly reduce
The wash number of glass curtain wall, in addition, can also make the application have heat-insulation and heat-preservation, sound insulation etc. prominent by the hollow sealing chamber 3
Characteristic out enriches the functional characteristic of the application in very big limit, and then can be satisfied with more and more use demands.
The phosphorus titanium dioxide composite film layer 11 is with a thickness of 80~120nm, preferably 100nm.The phosphorus titanium dioxide is multiple
Closing film layer 11 is using 5% p-doped TiO2Solution coating is formed by 10 front side of substrate glass substrate, it is therefore intended that
The anatase for cylindrical directional profile occur is brilliant, responds in 380~780nm wave band to be conducive to light, and then can make
The application has excellent energy-saving effect, and also has good self-cleaning net effect.
The TiOx film layer 12 is with a thickness of 20~45nm.It is that adhesiveness can be improved a little, and can also effectively keep out purple
The direct irradiation of outside line.
The Cu film layer 14 is with a thickness of 8~10nm.Its object is to form functional layer, for reflecting infrared ray, simultaneously also
Instead of first silver layer, so as to decline the production cost of the application 30%, in addition, also the application color can be made to be in neutrality,
With higher visible light transmittance.
The ZnSnO4Film layer 16 is with a thickness of 50~85nm.Its object is to form intermediate medium, visible light-transmissive is improved
Rate, and mechanical performance also with higher.
The thickness of the first AZO film layer 13 and the 2nd AZO film layer 17 is 300~500nm.Its purpose is
Reduce the transmitance of infrared ray.
The Ag film layer 18 is with a thickness of 8~10nm.Its purpose is to form functional layer, make for reinforcing reflection infrared ray
With.
The first NiCr film layer 15 and 19 thickness of the 2nd NiCr film layer are 3~5nm.Its purpose is to be formed
Functional layer, for reflecting infrared ray.
The Si3N4Film layer 20 is with a thickness of 50~85nm.Its object is to form high refractive index layer, so that the application is not
Only there is the high transmittance of visible light, and mechanical performance also with higher.
Second glass substrate 2 and the substrate glass substrate 10 are float glass, and its thickness be 4~
10mm the advantage is that float glass is relatively more neat with surface, flatness is relatively good, the stronger performance of optical property is special
Point, and with more the outstanding features such as the good transparency, bright property, pure property, indoor light be bright.
The application further mentions a kind of method for preparing the asymmetric class double-silver LOW-E glass of phosphorus doping self-cleaning, including following
Step:
30~100ml butyl titanate is dissolved in by 200ml dehydrated alcohol and 20~30mlH by S12O2The original being mixed into is molten
In liquid, 30min is stirred, instills 40ml deionized water, obtained solution one；
S2, by 10~20ml acetylacetone,2,4-pentanedione, 20~30mlHNO3It is added to solution one, is heated to 40 DEG C therewith, is stirred for
30min, obtained solution two；
S3, by 6~20mlH3PO4It is added to solution two, is heated to 80 DEG C therewith, is stirred for 2h, obtained solution three；
Solution three is put into the stainless steel autoclave with polytetrafluoroethyllining lining by S4, is heated to 135 DEG C therewith, pressure
3~4bar of power stirs 2h, obtained solution four；
S5, filtering solution four produce 5% p-doped TiO2Solution；
S6, with rolling method by 5% p-doped TiO2In solution coating to 10 front side of substrate glass substrate；
S7, by coated 5% p-doped TiO2The substrate glass substrate 10 of solution is put into tempering in annealing furnace, so that shape
At phosphorus titanium dioxide composite film layer 11, and then toughening self-cleaning glass is made；
S8, clean toughening self-cleaning glass it is non-it is self-cleaning wash one's face, and it is to be cleaned after convey into magnetron sputtering coater；
S9, magnetron sputtering TiOx film layer 12, AC power source sputtering, Ar gas, O2Gas is as protective gas, magnetron sputtering oxidation
Titanium target TiOx (x=1.7~1.9), argon carrier of oxygen flow-rate ratio are 800SCCM:40SCCM；
S10, the first AZO film layer 13 of magnetron sputtering, AC power source sputtering, Ar gas, O2Gas is as protective gas, magnetron sputtering
Al-Doped ZnO target (ZnO:Al=92:8), argon carrier of oxygen flow-rate ratio are 1000SCCM:40SCCM；
S11, magnetron sputtering C u film layer 14, DC power supply sputtering, Ar gas are used as protective gas, argon flow for 500~
550SCCM；
S12, the first NiCr film layer 15 of magnetron sputtering, DC power supply sputtering, Ar gas are as protective gas, argon flow
500~550SCCM；
S13, magnetron sputtering ZnSnO4Film layer 16, AC power source sputtering, Ar gas, O2Gas is as protective gas, magnetron sputtering zinc
Tin target (Zn:Sn=50:50), argon carrier of oxygen flow-rate ratio are 400SCCM:600SCCM；
S15, the 2nd AZO film layer 17 of magnetron sputtering, AC power source sputtering, Ar gas, O2Gas is as protective gas, magnetron sputtering
Al-Doped ZnO target (ZnO:Al=92:8), argon carrier of oxygen flow-rate ratio are 1000SCCM:40SCCM；
S16, magnetron sputtering Ag film layer 18, DC power supply sputtering, Ar gas are used as protective gas, argon flow for 500~
550SCCM；
S17, the 2nd NiCr film layer 19 of magnetron sputtering, DC power supply sputtering, Ar gas are as protective gas, argon flow
500~550SCCM；
S18, magnetron sputtering Si3N4Film layer 20, AC power source sputtering, Ar gas, O2Gas is as protective gas, magnetron sputtering silicon
Aluminium target (Si:Al=92:8), argon carrier of oxygen flow-rate ratio are 400SCCM:600SCCM；
S19, when step S18 is completed, toughening self-cleaning glass forms first glass substrate 1, therewith described in taking-up
First glass substrate 1, and bonded with second glass substrate 2, and make first glass substrate 1 and the second glass base
It is formed with the hollow sealing chamber 3 between piece 2, and then completes preparation work.
The application passes through the TiOx film layer 12 and the first AZO film layer 13, the Cu film layer 14, the first NiCr
Film layer 15, the ZnSnO4Film layer 16, the 2nd AZO film layer 17, the Ag film layer 18, the 2nd NiCr film layer 19 and institute
State Si3N4Film layer 20 combines to form asymmetric class double-silver LOW-E film layer structure, and replaces first layer by the Cu film layer 14
Ag layers, then making the application not only has low-E, high transparency, and production cost can also be greatly lowered, and leads to simultaneously
Crossing the phosphorus titanium dioxide composite film layer 11 makes the application have visible light-responded self-cleaning net effect, so as to greatly reduce
The wash number of glass curtain wall, in addition, can also make the application have heat-insulation and heat-preservation, sound insulation etc. prominent by the hollow sealing chamber 3
Characteristic out enriches the functional characteristic of the application in very big limit, and then can be satisfied with more and more use demands.
Presently filed embodiment is explained in detail in summary, but the application is not limited to above embodiment.
Even if it is to the application, various changes can be made, then still falls within the protection scope in the application.
Claims (10)
1. the asymmetric class double-silver LOW-E glass of phosphorus doping self-cleaning, it is characterised in that: including the first glass substrate (1) and be set to
The second glass substrate (2) on rear side of first glass substrate (1), first glass substrate (1) and the second glass base
Hollow sealing chamber (3) are equipped between piece (2), first glass substrate (1) includes substrate glass substrate (10) and is set in turn in
TiOx film layer (12), the first AZO film layer (13), Cu film layer (14), the first NiCr on substrate glass substrate (10) rear side
Film layer (15), ZnSnO4Film layer (16), the 2nd AZO film layer (17), Ag film layer (18), the 2nd NiCr film layer (19), Si3N4Film layer
(20), and be set to substrate glass substrate (10) front side on phosphorus titanium dioxide composite film layer (11).
2. the asymmetric class double-silver LOW-E glass of phosphorus doping self-cleaning according to claim 1, it is characterised in that: the phosphorus
Titanium dioxide composite film layer (11) is with a thickness of 80~120nm.
3. the asymmetric class double-silver LOW-E glass of phosphorus doping self-cleaning according to claim 1, it is characterised in that: described
TiOx film layer (12) is with a thickness of 20~45nm.
4. the asymmetric class double-silver LOW-E glass of phosphorus doping self-cleaning according to claim 1, it is characterised in that: the Cu
Film layer (14) is with a thickness of 8~10nm.
5. the asymmetric class double-silver LOW-E glass of phosphorus doping self-cleaning according to claim 1, it is characterised in that: described
ZnSnO4Film layer (16) is with a thickness of 50~85nm.
6. the asymmetric class double-silver LOW-E glass of phosphorus doping self-cleaning according to claim 1, it is characterised in that: described
The thickness of one AZO film layer (13) and the 2nd AZO film layer (17) is 300~500nm.
7. the asymmetric class double-silver LOW-E glass of phosphorus doping self-cleaning according to claim 1, it is characterised in that: the Ag
Film layer (18) is with a thickness of 8~10nm.
8. the asymmetric class double-silver LOW-E glass of phosphorus doping self-cleaning according to claim 1, it is characterised in that: described
One NiCr film layer (15) and the 2nd NiCr film layer (19) thickness are 3~5nm.
9. the asymmetric class double-silver LOW-E glass of phosphorus doping self-cleaning according to claim 1, it is characterised in that: described
Si3N4Film layer (20) is with a thickness of 50~85nm.
10. the method for preparing the asymmetric class double-silver LOW-E glass of phosphorus doping self-cleaning, which comprises the following steps:
30~100ml butyl titanate is dissolved in by 200ml dehydrated alcohol and 20~30mlH by S12O2In the original solution being mixed into,
30min is stirred, 40ml deionized water, obtained solution one are instilled；
S2, by 10~20ml acetylacetone,2,4-pentanedione, 20~30mlHNO3It is added to solution one, is heated to 40 DEG C therewith, is stirred for 30min,
Obtained solution two；
S3, by 6~20mlH3PO4It is added to solution two, is heated to 80 DEG C therewith, is stirred for 2h, obtained solution three；
Solution three is put into the stainless steel autoclave with polytetrafluoroethyllining lining by S4, is heated to 135 DEG C therewith, and pressure 3~
4bar stirs 2h, obtained solution four；
S5, filtering solution four produce 5% p-doped TiO2Solution；
S6, with rolling method by 5% p-doped TiO2In solution coating to substrate glass substrate (10) front side；
S7, by coated 5% p-doped TiO2The substrate glass substrate (10) of solution is put into tempering in annealing furnace, so as to be formed
Phosphorus titanium dioxide composite film layer (11), and then toughening self-cleaning glass is made；
S8, clean toughening self-cleaning glass it is non-it is self-cleaning wash one's face, and it is to be cleaned after convey into magnetron sputtering coater；
S9, magnetron sputtering TiOx film layer (12), AC power source sputtering, Ar gas, O2Gas is as protective gas, magnetron sputtering titanium oxide
Target TiOx (x=1.7~1.9), argon carrier of oxygen flow-rate ratio are 800SCCM:40SCCM；
S10, the first AZO film layer (13) of magnetron sputtering, AC power source sputtering, Ar gas, O2Gas is mixed as protective gas, magnetron sputtering
Aluminum zinc oxide target (ZnO:Al=92:8), argon carrier of oxygen flow-rate ratio are 1000SCCM:40SCCM；
S11, magnetron sputtering C u film layer (14), DC power supply sputtering, Ar gas are used as protective gas, argon flow for 500~
550SCCM；
S12, the first NiCr film layer (15) of magnetron sputtering, DC power supply sputtering, Ar gas is as protective gas, argon flow 500
~550SCCM；
S13, magnetron sputtering ZnSnO4Film layer (16), AC power source sputtering, Ar gas, O2Gas is as protective gas, magnetron sputtering zinc-tin
Target (Zn:Sn=50:50), argon carrier of oxygen flow-rate ratio are 400SCCM:600SCCM；
S15, the 2nd AZO film layer (17) of magnetron sputtering, AC power source sputtering, Ar gas, O2Gas is mixed as protective gas, magnetron sputtering
Aluminum zinc oxide target (ZnO:Al=92:8), argon carrier of oxygen flow-rate ratio are 1000SCCM:40SCCM；
S16, magnetron sputtering Ag film layer (18), DC power supply sputtering, Ar gas are used as protective gas, argon flow for 500~
550SCCM；
S17, the 2nd NiCr film layer (19) of magnetron sputtering, DC power supply sputtering, Ar gas is as protective gas, argon flow 500
~550SCCM；
S18, magnetron sputtering Si3N4Film layer (20), AC power source sputtering, Ar gas, O2Gas is as protective gas, magnetron sputtering sial
Target (Si:Al=92:8), argon carrier of oxygen flow-rate ratio are 400SCCM:600SCCM；
S19, when step S18 is completed, toughening self-cleaning glass forms first glass substrate (1), takes out described the therewith
One glass substrate (1), and bonded with second glass substrate (2), and make first glass substrate (1) and second glass
It is formed with the hollow sealing chamber (3) between glass substrate (2), and then completes preparation work.
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