CN103771726A - Production method of low-emissivity glass - Google Patents
Production method of low-emissivity glass Download PDFInfo
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- CN103771726A CN103771726A CN201310718118.3A CN201310718118A CN103771726A CN 103771726 A CN103771726 A CN 103771726A CN 201310718118 A CN201310718118 A CN 201310718118A CN 103771726 A CN103771726 A CN 103771726A
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- magnetron sputtering
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Abstract
The invention discloses a production method of a low-emissivity glass. The production method comprises the steps of A, sputtering a ceramic titanium target with alternating-current medium-frequency power supply, namely, forming a TiO2 dielectric layer on a glass substrate through magnetron sputtering; B, sputtering a chromium plane target with direct-current power supply, namely, forming a CrNx barrier layer on the TiO2 dielectric layer through magnetron sputtering; C, sputtering an aluminum-doped zinc oxide ceramic rotating target with alternating-current power supply, namely, forming an AZO flat layer on the TiO2 dielectric layer through magnetron sputtering; D, sputtering a silver plane target with direct-current power supply,namely, forming an Ag functional layer on the AZO flat layer through magnetron sputtering; E, sputtering with direct-current power supply, namely, forming a (NiCr)xOy layer on the Ag functional layer through magnetron sputtering; F, sputtering a tin target with alternating-current medium-frequency power supply, namely, forming a SnO2 protection layer on the (NiCr)xOy layer through magnetron sputtering; and G, sputtering a graphite target with direct-current power source, namely, forming a C layer on the SnO2 protection layer obtained in the step F through magnetron sputtering. The invention aims at providing the production method, which is simple in process, convenient to operate and relatively low in production cost, of the low-emissivity glass.
Description
Technical field
The present invention relates to a kind of making method of low emissivity glass.
Background technology
Low emissivity glass refers to that ir radiation is had to high-reflectivity, visible ray is had to the flat plate film coating glass of good transmissivity.Low emissivity glass has good printing opacity, insulation, heat-proof quality, is widely used in the places such as window, fire door, refrigerator door.
Its insufficient strength of existing low emissivity glass is easy to suffer damage, and impact is used normally, can not meet user's demand, so existing low emissivity glass awaits progressive perfect.
Summary of the invention
The object of the invention is, in order to overcome weak point of the prior art, provides a kind of technique simple, easy to operate, the making method of the relatively low low emissivity glass of production cost.
In order to achieve the above object, the present invention adopts following scheme:
A making method for low emissivity glass, is characterized in that comprising the following steps:
A, employing argon gas, as reactant gases, exchange intermediate frequency power supply sputter pottery titanium target, magnetron sputtering TiO on glass substrate
2medium layer;
B, adopt nitrogen as reactant gases, argon gas is as shielding gas, direct supply sputter chromium planar target, TiO in steps A
2magnetron sputtering C rNx blocking layer on medium layer;
C, adopt argon gas as reactant gases, AC power sputter Al-Doped ZnO pottery rotary target, the TiO in step B
2magnetron sputtering AZO levelling blanket on medium layer;
D, adopt argon gas as reactant gases, direct supply sputtering silver planar target, magnetron sputtering Ag functional layer on AZO levelling blanket in step C;
E, employing nitrogen, as reactant gases, ooze a small amount of oxygen, direct supply sputter, magnetron sputtering (NiCr) xOy layer in the Ag functional layer in step D;
F, employing oxygen, as reactant gases, exchange intermediate frequency power supply sputter tin target, magnetron sputtering SnO on (NiCr) xOy layer in step e
2protective layer;
G, galvanic current sputter graphite target, the SnO in step F
2magnetron sputtering C layer on protective layer.
The making method of a kind of low emissivity glass as above, is characterized in that TiO described in steps A
2the thickness of medium layer is 10~30nm, and sputtering power is 30~90KW.
The making method of a kind of low emissivity glass as above, the thickness that it is characterized in that CrNx blocking layer in step B is 0.5~2nm, the volume flow ratio of argon gas and nitrogen is 1:2.
The making method of a kind of low emissivity glass as above, is characterized in that the thickness of AZO levelling blanket is 5~20nm described in step C.
The making method of a kind of low emissivity glass as above, the thickness that it is characterized in that the functional layer of Ag described in step e is 7~10nm.
The making method of a kind of low emissivity glass as above, is characterized in that the thickness of described (NiCr) xOy layer is 0.5~5nm.
The making method of a kind of low emissivity glass as above, is characterized in that described SnO
2the thickness of protective layer is 20~50nm.
The making method of a kind of low emissivity glass as above, the thickness that it is characterized in that described C layer is 10~20nm.
In sum, beneficial effect of the present invention:
Processing method of the present invention is simple, easy to operate, and production cost is relatively low.In the present invention (NiCr)
xo
yhigh temperature oxidation resistance can improve rete wear resistance, raising transmittance, raising tempering time.
In the present invention, C layer replaces PE protective membrane or insulating powder, prevents that coated glass is scratched in treating processes; This rete is understood by perfect combustion in toughening process, thereby does not affect the optical property of coated glass.
Products characteristics of the present invention: transmitance reaches 83%, radiant ratio is less than 0.08, and rete is difficult for being scratched.
Embodiment
Below in conjunction with embodiment, the present invention is described further:
Embodiment 1
The making method of a kind of low emissivity glass of the present invention, comprises the following steps:
A, employing argon gas, as reactant gases, exchange intermediate frequency power supply sputter pottery titanium target, magnetron sputtering TiO on glass substrate
2medium layer; The gas flow 1000sccm of described argon gas, described TiO
2the thickness of medium layer is 10nm, and sputtering power is 30KW;
B, adopt nitrogen as reactant gases, argon gas is as shielding gas, direct supply sputter chromium planar target, TiO in steps A
2magnetron sputtering C rNx blocking layer on medium layer; The thickness on described CrNx blocking layer is 0.5nm, and the volume flow ratio of argon gas and nitrogen is 1:2, and the volume flow ratio of argon gas and nitrogen is 500sccm:1000sccm; CrNx blocking layer effectively prevents that Ag layer is oxidized;
C, adopt argon gas as reactant gases, AC power sputter Al-Doped ZnO pottery rotary target, the TiO in step B
2magnetron sputtering AZO levelling blanket on medium layer; The thickness of AZO levelling blanket is 5nm, and AZO levelling blanket is that Ag layer is made place mat, reduces radiant ratio;
D, adopt argon gas as reactant gases, direct supply sputtering silver planar target, magnetron sputtering Ag functional layer on AZO levelling blanket in step C; The thickness of described Ag functional layer is 7nm;
E, employing nitrogen, as reactant gases, ooze a small amount of oxygen, direct supply sputter, magnetron sputtering (NiCr) xOy layer in the Ag functional layer in step D; The thickness of described (NiCr) xOy layer is 0.5nm; (NiCr) high temperature oxidation resistance when xOy layer can effectively improve rete wear resistance, raising transmittance, raising tempering;
F, employing oxygen, as reactant gases, exchange intermediate frequency power supply sputter tin target, magnetron sputtering SnO on (NiCr) xOy layer in step e
2protective layer; Described SnO
2the thickness of protective layer is 20nm; SnO
2protective layer good corrosion resistance;
G, galvanic current sputter graphite target, the SnO in step F
2magnetron sputtering C layer on protective layer, the thickness of described C layer is 10nm.This layer is not the functional layer of LOW-E glass, is PE protective membrane or the insulating powder having plated after LOW-E film for replacing, and prevents that coated glass is scratched in treating processes; This rete is understood by perfect combustion in toughening process, thereby does not affect the optical property of coated glass.
Product transmitance of the present invention reaches 83%, and radiant ratio is less than 0.08, and rete is difficult for being scratched.Embodiment 2
The making method of a kind of low emissivity glass of the present invention, comprises the following steps:
A, employing argon gas, as reactant gases, exchange intermediate frequency power supply sputter pottery titanium target, magnetron sputtering TiO on glass substrate
2medium layer; The gas flow 1000sccm of described argon gas, described TiO
2the thickness of medium layer is 30nm, and sputtering power is 90KW;
B, adopt nitrogen as reactant gases, argon gas is as shielding gas, direct supply sputter chromium planar target, TiO in steps A
2magnetron sputtering C rNx blocking layer on medium layer; The thickness on described CrNx blocking layer is 2nm, and the volume flow ratio of argon gas and nitrogen is 1:2, and the volume flow ratio of argon gas and nitrogen is 500sccm:1000sccm; CrNx blocking layer effectively prevents that Ag layer is oxidized;
C, adopt argon gas as reactant gases, AC power sputter Al-Doped ZnO pottery rotary target, the TiO in step B
2magnetron sputtering AZO levelling blanket on medium layer; The thickness of AZO levelling blanket is 20nm, and AZO levelling blanket is that Ag layer is made place mat, reduces radiant ratio;
D, adopt argon gas as reactant gases, direct supply sputtering silver planar target, magnetron sputtering Ag functional layer on AZO levelling blanket in step C; The thickness of described Ag functional layer is 10nm;
E, employing nitrogen, as reactant gases, ooze a small amount of oxygen, direct supply sputter, magnetron sputtering (NiCr) xOy layer in the Ag functional layer in step D; The thickness of described (NiCr) xOy layer is 5nm; (NiCr) high temperature oxidation resistance when xOy layer can effectively improve rete wear resistance, raising transmittance, raising tempering;
F, employing oxygen, as reactant gases, exchange intermediate frequency power supply sputter tin target, magnetron sputtering SnO on (NiCr) xOy layer in step e
2protective layer; Described SnO
2the thickness of protective layer is 50nm; SnO
2protective layer good corrosion resistance;
G, galvanic current sputter graphite target, the SnO in step F
2magnetron sputtering C layer on protective layer, the thickness of described C layer is 20nm.This layer is not the functional layer of LOW-E glass, is PE protective membrane or the insulating powder having plated after LOW-E film for replacing, and prevents that coated glass is scratched in treating processes; This rete is understood by perfect combustion in toughening process, thereby does not affect the optical property of coated glass.
Product transmitance of the present invention reaches 83%, and radiant ratio is less than 0.08, and rete is difficult for being scratched.Embodiment 3
The making method of a kind of low emissivity glass of the present invention, comprises the following steps:
A, employing argon gas, as reactant gases, exchange intermediate frequency power supply sputter pottery titanium target, magnetron sputtering TiO on glass substrate
2medium layer; The gas flow 1000sccm of described argon gas, described TiO
2the thickness of medium layer is 20nm, and sputtering power is 50KW;
B, adopt nitrogen as reactant gases, argon gas is as shielding gas, direct supply sputter chromium planar target, TiO in steps A
2magnetron sputtering C rNx blocking layer on medium layer; The thickness on described CrNx blocking layer is 1nm, and the volume flow ratio of argon gas and nitrogen is 1:2, and the volume flow ratio of argon gas and nitrogen is 500sccm:1000sccm; CrNx blocking layer effectively prevents that Ag layer is oxidized;
C, adopt argon gas as reactant gases, AC power sputter Al-Doped ZnO pottery rotary target, the TiO in step B
2magnetron sputtering AZO levelling blanket on medium layer; The thickness of AZO levelling blanket is 15nm, and AZO levelling blanket is that Ag layer is made place mat, reduces radiant ratio;
D, adopt argon gas as reactant gases, direct supply sputtering silver planar target, magnetron sputtering Ag functional layer on AZO levelling blanket in step C; The thickness of described Ag functional layer is 8nm;
E, employing nitrogen, as reactant gases, ooze a small amount of oxygen, direct supply sputter, magnetron sputtering (NiCr) xOy layer in the Ag functional layer in step D; The thickness of described (NiCr) xOy layer is 3nm; (NiCr) high temperature oxidation resistance when xOy layer can effectively improve rete wear resistance, raising transmittance, raising tempering;
F, employing oxygen, as reactant gases, exchange intermediate frequency power supply sputter tin target, magnetron sputtering SnO on (NiCr) xOy layer in step e
2protective layer; Described SnO
2the thickness of protective layer is 35nm; SnO
2protective layer good corrosion resistance;
G, galvanic current sputter graphite target, the SnO in step F
2magnetron sputtering C layer on protective layer, the thickness of described C layer is 15nm.This layer is not the functional layer of LOW-E glass, is PE protective membrane or the insulating powder having plated after LOW-E film for replacing, and prevents that coated glass is scratched in treating processes; This rete is understood by perfect combustion in toughening process, thereby does not affect the optical property of coated glass.
Product transmitance of the present invention reaches 83%, and radiant ratio is less than 0.08, and rete is difficult for being scratched.
More than show and described ultimate principle of the present invention and principal character and advantage of the present invention.The technician of the industry should understand; the present invention is not restricted to the described embodiments; that in above-described embodiment and specification sheets, describes just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.The claimed scope of the present invention is defined by appending claims and equivalent thereof.
Claims (8)
1. a making method for low emissivity glass, is characterized in that comprising the following steps:
A, employing argon gas, as reactant gases, exchange intermediate frequency power supply sputter pottery titanium target, magnetron sputtering TiO on glass substrate
2medium layer;
B, adopt nitrogen as reactant gases, argon gas is as shielding gas, direct supply sputter chromium planar target, TiO in steps A
2magnetron sputtering C rNx blocking layer on medium layer;
C, adopt argon gas as reactant gases, AC power sputter Al-Doped ZnO pottery rotary target, the TiO in step B
2magnetron sputtering AZO levelling blanket on medium layer;
D, adopt argon gas as reactant gases, direct supply sputtering silver planar target, magnetron sputtering Ag functional layer on AZO levelling blanket in step C;
E, employing nitrogen, as reactant gases, ooze a small amount of oxygen, direct supply sputter, magnetron sputtering (NiCr) xOy layer in the Ag functional layer in step D;
F, employing oxygen, as reactant gases, exchange intermediate frequency power supply sputter tin target, magnetron sputtering SnO on (NiCr) xOy layer in step e
2protective layer;
G, galvanic current sputter graphite target, the SnO in step F
2magnetron sputtering C layer on protective layer.
2. the making method of a kind of low emissivity glass according to claim 1, is characterized in that TiO described in steps A
2the thickness of medium layer is 10~30nm, and sputtering power is 30~90KW.
3. the making method of a kind of low emissivity glass according to claim 1, the thickness that it is characterized in that CrNx blocking layer in step B is 0.5~2nm, the volume flow ratio of argon gas and nitrogen is 1:2.
4. the making method of a kind of low emissivity glass according to claim 1, is characterized in that the thickness of AZO levelling blanket is 5~20nm described in step C.
5. the making method of a kind of low emissivity glass according to claim 1, the thickness that it is characterized in that the functional layer of Ag described in step e is 7~10nm.
6. the making method of a kind of low emissivity glass according to claim 1, is characterized in that the thickness of described (NiCr) xOy layer is 0.5~5nm.
7. the making method of a kind of low emissivity glass according to claim 1, is characterized in that described SnO
2the thickness of protective layer is 20~50nm.
8. the making method of a kind of low emissivity glass according to claim 1, the thickness that it is characterized in that described C layer is 10~20nm.
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Cited By (4)
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CN105271823A (en) * | 2015-10-24 | 2016-01-27 | 揭阳市宏光镀膜玻璃有限公司 | Temperable high-abrasion-resistance golden double-silver LOW-E glass and preparation method thereof |
CN105459512A (en) * | 2015-12-30 | 2016-04-06 | 广西远大玻璃节能科技股份有限公司 | Anti-scratching energy-saving and environment-friendly glass |
CN106746728A (en) * | 2016-12-23 | 2017-05-31 | 重庆物华天宝镀膜科技有限公司 | It is not likely to produce the Low emissivity double silver coating glass of cut |
CN109809712A (en) * | 2019-03-27 | 2019-05-28 | 揭阳市宏光镀膜玻璃有限公司 | Asymmetric class double-silver LOW-E glass of phosphorus doping self-cleaning and preparation method thereof |
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EP1889818A1 (en) * | 2006-08-08 | 2008-02-20 | Scheuten Glasgroep | Temperable low-e coating system; method for producing the same and a low-e glass product comprising said coating system |
CN101384516A (en) * | 2006-03-03 | 2009-03-11 | 应用材料合资有限公司 | Infrared radiation reflecting coating system and method of its production |
CN201817405U (en) * | 2010-09-01 | 2011-05-04 | 林嘉宏 | Low-radiation glass with the ability of being processed in different places |
CN102951855A (en) * | 2012-11-26 | 2013-03-06 | 中山市创科科研技术服务有限公司 | High-transmittance single-silver low-emissivity glass beneficial to toughening treatment |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN1620408A (en) * | 2002-01-25 | 2005-05-25 | Afg工业公司 | Protective layers for optical coatings |
CN101384516A (en) * | 2006-03-03 | 2009-03-11 | 应用材料合资有限公司 | Infrared radiation reflecting coating system and method of its production |
EP1889818A1 (en) * | 2006-08-08 | 2008-02-20 | Scheuten Glasgroep | Temperable low-e coating system; method for producing the same and a low-e glass product comprising said coating system |
CN1931764A (en) * | 2006-10-19 | 2007-03-21 | 林嘉宏 | Low radiation coated glass capable of being toughened and its production process |
CN201817405U (en) * | 2010-09-01 | 2011-05-04 | 林嘉宏 | Low-radiation glass with the ability of being processed in different places |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105271823A (en) * | 2015-10-24 | 2016-01-27 | 揭阳市宏光镀膜玻璃有限公司 | Temperable high-abrasion-resistance golden double-silver LOW-E glass and preparation method thereof |
CN105459512A (en) * | 2015-12-30 | 2016-04-06 | 广西远大玻璃节能科技股份有限公司 | Anti-scratching energy-saving and environment-friendly glass |
CN106746728A (en) * | 2016-12-23 | 2017-05-31 | 重庆物华天宝镀膜科技有限公司 | It is not likely to produce the Low emissivity double silver coating glass of cut |
CN109809712A (en) * | 2019-03-27 | 2019-05-28 | 揭阳市宏光镀膜玻璃有限公司 | Asymmetric class double-silver LOW-E glass of phosphorus doping self-cleaning and preparation method thereof |
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Application publication date: 20140507 |