CN103879080A - Three-silver-layer low-radiation glass and preparation method thereof - Google Patents
Three-silver-layer low-radiation glass and preparation method thereof Download PDFInfo
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Abstract
The invention relates to three-silver-layer low-radiation glass and a preparation method thereof. The three-silver-layer low-radiation glass comprises a glass substrate and a first composite dielectric layer, a first bottom protective layer, a first infrared reflection layer, a first upper protective layer, a second composite dielectric layer, a second bottom protective layer, a second infrared reflection layer, a second upper protective layer, a third composite dielectric layer, a third bottom protective layer, a third infrared reflection layer, a third upper protective layer, a fourth composite dielectric layer and a top protective layer. The three-silver-layer low-radiation glass has the advantages of being capable of performing toughening treatment.
Description
Technical field
The present invention relates to a kind of energy-saving glass, especially a kind of three-silver low radiation glass and preparation method thereof.
Background technology
Existing three-silver low radiation glass normally adopts vacuum magnetic-control sputtering method to produce, and it generally comprises substrate of glass and is formed at successively the first dielectric combination layer, the first silver layer, the first barrier layer, the second dielectric combination layer, the second silver layer, the second barrier layer, the 3rd dielectric combination layer, the 3rd silver layer, the 3rd barrier layer and the 4th dielectric combination layer in substrate of glass.
The first dielectric combination layer, the second dielectric combination layer, the 3rd dielectric combination layer or the 4th dielectric combination layer are generally to be formed by metal or nonmetallic oxide or nitride, for example titanium oxide (TiO
2), zinc tin oxide (ZnSnO
x), tin oxide (SnO
2), zinc oxide (ZnO), silica (SiO
2), tantalum oxide (Ta
2o
5), bismuth oxide (BiO
2), aluminium oxide (Al
2o
3), Zinc-aluminium (AZO), niobium oxide (Nb
2o
5) or silicon nitride (Si
3n
4).
The first barrier layer, the second barrier layer or the 3rd barrier layer are generally to be formed by metal, metal oxide or metal nitride, also can be that alloy, alloyed oxide or alloy nitride form, for example AZO, titanium (Ti), nichrome (NiCr), nickel chromium triangle oxide (NiCrO
x) or nickel chromium triangle nitride (NiCrN
x).
For the consideration of security, three-silver low radiation glass requires tempering processing in actual applications, but the film layer structure non-refractory of existing three-silver low radiation glass, in the tempering processing procedure in 680 ~ 720 DEG C of temperature ranges, rete is easily destroyed, and causes low emissivity glass afunction.Therefore, in actual production, existing three-silver low radiation glass can only first carry out tempering to substrate of glass, and then plated film in substrate of glass after tempering.But after first substrate of glass tempering, the preparation method of plated film has following shortcoming: be difficult to realize curved arc plated film, production efficiency is low, processing cost is high and cost of transportation is high.
Summary of the invention
In view of above-mentioned condition, be necessary to provide a kind of and can carry out three-silver low radiation glass of tempering processing and preparation method thereof.
The invention provides a kind of three-silver low radiation glass, it comprises substrate of glass and is formed at successively the first compound medium layer, the first bottom protective layer, the first infrared reflecting layer, the first upper protective layer, the second compound medium layer, the second bottom protective layer, the second infrared reflecting layer, the second upper protective layer, the 3rd compound medium layer, the 3rd bottom protective layer, the 3rd infrared reflecting layer, the 3rd upper protective layer, the 4th compound medium layer and the top protective layer in this substrate of glass.
This first compound medium layer, this second compound medium layer, the 3rd compound medium layer and the 4th compound medium layer comprise respectively Zinc-aluminium.
This first compound medium layer, this second compound medium layer, the 3rd compound medium layer and the 4th compound medium layer are combined by multilayer dielectricity layer respectively, and are to be formed by Zinc-aluminium at this first compound medium layer, this second compound medium layer, the 3rd compound medium layer with the corresponding dielectric layer contacting with the first bottom protective layer, the first upper protective layer, the second bottom protective layer, the second upper protective layer, the 3rd bottom protective layer, the 3rd upper protective layer or top protective layer in the 4th compound medium layer.
The thickness of this first compound medium layer is 15 ~ 45nm, and the thickness of this second compound medium layer is that the thickness of 55 ~ 80nm, the 3rd compound medium layer is 55 ~ 80nm, and the thickness of the 4th compound medium layer is 25 ~ 40nm.
This first infrared reflecting layer, this second infrared reflecting layer and the 3rd infrared reflecting layer are respectively to be formed by Kufil, and in Kufil, silver is 1:1 ~ 100:1 with the mass ratio of copper.
The thickness of this first infrared reflecting layer is 8 ~ 15nm, and the thickness of this second infrared reflecting layer is 9 ~ 17nm, and the thickness of the 3rd infrared reflecting layer is 10 ~ 20nm.
The thickness of this first infrared reflecting layer is less than the thickness of this second infrared reflecting layer, and the thickness of this second infrared reflecting layer is less than the thickness of the 3rd infrared reflecting layer.
This first bottom protective layer, this first upper protective layer, this second bottom protective layer, this second upper protective layer, the 3rd bottom protective layer and the 3rd upper protective layer are respectively to be formed by Nitinol; and in Nitinol, the mass ratio of nickel and titanium is 1:1 ~ 10:1.
The thickness of this first bottom protective layer, this first upper protective layer, this second bottom protective layer, this second upper protective layer, the 3rd bottom protective layer and the 3rd upper protective layer is respectively 0.5 ~ 5nm.
The present invention also provides a kind of preparation method of three-silver low radiation glass, and it comprises provides substrate of glass; By rotating cathode, midfrequent AC power supply magnetron sputtering deposits the first compound medium layer in this substrate of glass; By planar cathode, direct current or direct current add pulse power magnetron sputtering and deposit the first bottom protective layer on this first compound medium layers; By planar cathode, direct current or direct current add pulse power magnetron sputtering and deposit the first infrared reflecting layer in this first bottom protective layer; By planar cathode, direct current or direct current add pulse power magnetron sputtering and deposit the first upper protective layer on this first infrared reflecting layers; In this first upper protective layer, deposit the second compound medium layer by rotating cathode, midfrequent AC power supply magnetron sputtering; By planar cathode, direct current or direct current add pulse power magnetron sputtering and deposit the second bottom protective layer on this second compound medium layers; By planar cathode, direct current or direct current add pulse power magnetron sputtering and deposit the second infrared reflecting layer in this second bottom protective layer; By planar cathode, direct current or direct current add pulse power magnetron sputtering and deposit the second upper protective layer on this second infrared reflecting layers; In this second upper protective layer, deposit the 3rd compound medium layer by rotating cathode, midfrequent AC power supply magnetron sputtering; Add pulse power magnetron sputtering by planar cathode, direct current or direct current and on the 3rd compound medium layer, deposit the 3rd bottom protective layer; Add pulse power magnetron sputtering by planar cathode, direct current or direct current and in the 3rd bottom protective layer, deposit the 3rd infrared reflecting layer; Add pulse power magnetron sputtering by planar cathode, direct current or direct current and on the 3rd infrared reflecting layer, deposit the 3rd upper protective layer; In the 3rd upper protective layer, deposit the 4th compound medium layer by rotating cathode, midfrequent AC power supply magnetron sputtering; And add pulse power magnetron sputtering by planar cathode, direct current or direct current deposit top protective layer on the 4th compound medium layer.
The first bottom protective layer, the first upper protective layer, the second bottom protective layer, the second upper protective layer, the 3rd bottom protective layer and the 3rd upper protective layer of above-mentioned three-silver low radiation glass can prevent the metal oxidized or sulfuration in the time of tempering in the first infrared reflecting layer, the second infrared reflecting layer and the 3rd infrared reflecting layer; make above-mentioned three-silver low radiation glass can carry out tempering processing, thereby can improve that existing three-silver low radiation glass is difficult to realize curved arc plated film, production efficiency is low, processing cost is high and the shortcoming such as cost of transportation is high.
Brief description of the drawings
Fig. 1 is the three-silver low radiation glass schematic diagram of the embodiment of the present invention.
Detailed description of the invention
Below in conjunction with drawings and Examples, three-silver low radiation glass of the present invention is described in further detail.
Refer to Fig. 1, the three-silver low radiation glass 100 of the embodiment of the present invention comprises substrate of glass 10 and the first compound medium layer 11, the first bottom protective layer 12, the first infrared reflecting layer 13, the first upper protective layer 14, the second compound medium layer 15, the second bottom protective layer 16, the second infrared reflecting layer 17, the second upper protective layer 18, the 3rd compound medium layer 19, the 3rd bottom protective layer 20, the 3rd infrared reflecting layer 21, the 3rd upper protective layer 22, the 4th compound medium layer 23 and top protective layer 24 that are formed at successively in substrate of glass 10.
Specifically in the present embodiment, the first compound medium layer 11, the second compound medium layer 15, the 3rd compound medium layer 19 and the 4th compound medium layer 23 can comprise respectively Zinc-aluminium (AZO).For example, the first compound medium layer 11, the second compound medium layer 15, the 3rd compound medium layer 19 and the 4th compound medium layer 23 are combined by multilayer dielectricity layer respectively, and are to be formed by Zinc-aluminium at the first compound medium layer 11, the second compound medium layer 15, the 3rd compound medium layer 19 with the corresponding dielectric layer contacting with the first bottom protective layer 12, the first upper protective layer 14, the second bottom protective layer 16, the second upper protective layer 18, the 3rd bottom protective layer 20, the 3rd upper protective layer 22 or top protective layer 24 in the 4th compound medium layer 23; And other layers can be formed by metal or nonmetallic oxide or nitride, for example TiO
2, ZnSnO
x, SnO
2, ZnO, SiO
2, Ta
2o
5, BiO
2, Al
2o
3, AZO, Nb
2o
5or Si
3n
4form.The dielectric layer that Zinc-aluminium forms can be protected in the first infrared reflecting layer 13, the second infrared reflecting layer 17 and the 3rd infrared reflecting layer 21, for example, can prevent silver and copper oxidized or sulfuration in the time of tempering in the first infrared reflecting layer 13, the second infrared reflecting layer 17 and the 3rd infrared reflecting layer 21; The dielectric layer that Zinc-aluminium forms also can be in order to regulate whole rete to see through the b* value (b* value is the parameter value of CIELAB color space, expression champac degree) of look, thereby be convenient to obtain required appearance color or through look.The thickness of the dielectric layer that Zinc-aluminium forms can be 15 ~ 25nm.In addition, the thickness of the first compound medium layer 11 can be 15 ~ 45nm, and the thickness of the second compound medium layer 15 can be 55 ~ 80nm, and the thickness of the 3rd compound medium layer 19 can be 55 ~ 80nm, and the thickness of the 4th compound medium layer 23 can be 25 ~ 40nm.
The first infrared reflecting layer 13, the second infrared reflecting layer 17 and the 3rd infrared reflecting layer 21 can be respectively to be formed by Kufil, and in Kufil, silver can be 1:1 ~ 100:1 with the mass ratio of copper.Adopt Kufil to form the first infrared reflecting layer 13, the second infrared reflecting layer 17 or the 3rd infrared reflecting layer 21 and not only can improve antioxygenic property, the crocking resistance of whole rete, and copper to the absorption of visible ray specific band also help make whole rete see through look more neutral.In addition, the thickness of the first infrared reflecting layer 13 can be 8 ~ 15nm, and the thickness of the second infrared reflecting layer 17 can be 9 ~ 17nm, and the thickness of the 3rd infrared reflecting layer 21 can be 10 ~ 20nm; And the thickness that preferably makes the first infrared reflecting layer 13 is less than the thickness of the second infrared reflecting layer 17, the thickness of the second infrared reflecting layer 17 is less than the thickness of the 3rd infrared reflecting layer 21.
The first bottom protective layer 12, the first upper protective layer 14, the second bottom protective layer 16, the second upper protective layer 18, the 3rd bottom protective layer 20 and the 3rd upper protective layer 22 can be used for correspondence and prevent the oxidized or sulfuration in toughening process of the first infrared reflecting layer 13, the second infrared reflecting layer 17 and the 3rd infrared reflecting layer 21.The first bottom protective layer 12, the first upper protective layer 14, the second bottom protective layer 16, the second upper protective layer 18, the 3rd bottom protective layer 20 and the 3rd upper protective layer 22 can be formed by Nitinol respectively; and in Nitinol, the mass ratio of nickel and titanium can be 1:1 ~ 10:1.The thickness of the first bottom protective layer 12, the first upper protective layer 14, the second bottom protective layer 16, the second upper protective layer 18, the 3rd bottom protective layer 20 and the 3rd upper protective layer 22 is respectively 0.5 ~ 5nm.By regulating the thickness of the first bottom protective layer 12, the first upper protective layer 14, the second bottom protective layer 16, the second upper protective layer 18, the 3rd bottom protective layer 20 and the 3rd upper protective layer 22 may control visible reflectance and the transmitance of face in the glass surface of substrate of glass 10 and rete, thereby be content with very little the diversified demand of market to indoor reflection rate, outdoor reflectivity and transmitance.
Top protective layer 18 should have good scratch resistance, resistance to wiping properties, thereby whole rete is shielded.The material of top protective layer 18 can be zirconia (ZrO
2), its thickness can be 5 ~ 15nm.
The first bottom protective layer 12, the first upper protective layer 14, the second bottom protective layer 16, the second upper protective layer 18, the 3rd bottom protective layer 20 and the 3rd upper protective layer 22 of above-mentioned three-silver low radiation glass 100 can prevent the metal oxidized or sulfuration in the time of tempering in the first infrared reflecting layer 13, the second infrared reflecting layer 17 and the 3rd infrared reflecting layer 21; For example, when the first bottom protective layer 12, the first upper protective layer 14, the second bottom protective layer 16, the second upper protective layer 18, the 3rd bottom protective layer 20 and the 3rd upper protective layer 22 that adopts certain material to form can guarantee to carry out tempering in 680 ~ 720 DEG C of temperature ranges; can prevent the oxidized or sulfuration of copper in the first infrared reflecting layer 13, the second infrared reflecting layer 17 and the 3rd infrared reflecting layer 21 or silver, thereby can improve that existing three-silver low radiation glass is difficult to realize curved arc plated film, production efficiency is low, processing cost is high and the shortcoming such as cost of transportation is high.
The embodiment of the present invention also provides a kind of preparation method of above-mentioned three-silver low radiation glass 100, and first it be to provide substrate of glass 10.Substrate of glass 10 can be cleaned totally, dry, and is placed in vacuum chamber coating film area.
Then,, by rotating cathode, midfrequent AC power supply magnetron sputtering deposits the first compound medium layer 11 in substrate of glass 10.
Then,, by planar cathode, direct current or direct current add pulse power magnetron sputtering and on the first compound medium layer 11, deposit the first bottom protective layer 12;
Then,, by planar cathode, direct current or direct current add pulse power magnetron sputtering and in the first bottom protective layer 12, deposit the first infrared reflecting layer 13;
Then,, by planar cathode, direct current or direct current add pulse power magnetron sputtering and on the first infrared reflecting layer 13, deposit the first upper protective layer 14;
Then, in the first upper protective layer 14, deposit the second compound medium layer 15 by rotating cathode, midfrequent AC power supply magnetron sputtering;
Then,, by planar cathode, direct current or direct current add pulse power magnetron sputtering and on the second compound medium layer 15, deposit the second bottom protective layer 16;
Then,, by planar cathode, direct current or direct current add pulse power magnetron sputtering and in the second bottom protective layer 16, deposit the second infrared reflecting layer 17;
Then,, by planar cathode, direct current or direct current add pulse power magnetron sputtering and on the second infrared reflecting layer 17, deposit the second upper protective layer 18;
Then, in the second upper protective layer 18, deposit the 3rd compound medium layer 19 by rotating cathode, midfrequent AC power supply magnetron sputtering;
Then, add pulse power magnetron sputtering by planar cathode, direct current or direct current and on the 3rd compound medium layer 19, deposit the 3rd bottom protective layer 20;
Then, add pulse power magnetron sputtering by planar cathode, direct current or direct current and in the 3rd bottom protective layer 20, deposit the 3rd infrared reflecting layer 21;
Then, add pulse power magnetron sputtering by planar cathode, direct current or direct current and on the 3rd infrared reflecting layer 21, deposit the 3rd upper protective layer 22;
Then, in the 3rd upper protective layer 22, deposit the 4th compound medium layer 23 by rotating cathode, midfrequent AC power supply magnetron sputtering; And
Then, add pulse power magnetron sputtering by planar cathode, direct current or direct current and deposit top protective layer 24 on the 4th compound medium layer 23.
Specific embodiment
Embodiment 1
A kind of three-silver low radiation glass, film layer structure from substrate of glass outwards successively: substrate of glass/Si
3n
4(16nm)/AZO(16nm)/NiTi(1.5nm)/AgCu(12nm)/NiTi(1.5nm)/AZO(18nm)/Si
3n
4(33nm)/AZO(18nm)/NiTi(1.5nm)/AgCu(13.5nm)/NiTi(1.5nm)/AZO(18nm)/Si
3n
4(50nm)/AZO(18nm)/NiTi(1.5nm)/AgCu(15nm)/NiTi(1.5nm)/AZO(18nm)/Si
3n
4(24nm)/ZrO
2(10nm)
Wherein, the first compound medium layer is by Si
3n
4form with AZO, thickness is respectively 16nm and 18nm; The first bottom protective layer is formed by NiTi, and thickness is 1nm; The first infrared reflecting layer is formed by AgCu, and thickness is 12nm; The first top, end protective layer is formed by NiTi, and thickness is 1nm; The second compound medium layer is by AZO, Si
3n
4, AZO form, thickness is respectively 18nm, 33nm, 18nm; The second bottom protective layer is formed by NiTi, and thickness is 1.5nm; The second infrared reflecting layer is formed by AgCu, and thickness is 13.5nm; The second top protective layer is formed by NiTi, and thickness is 1.5nm; The 3rd compound medium layer is by AZO, Si
3n
4,, AZO form, thickness is respectively 18nm, 50nm, 18nm; The 3rd bottom protective layer is formed by NiTi, and thickness is 2nm; The 3rd infrared reflecting layer is formed by AgCu, and thickness is 15nm; The 3rd top protective layer is formed by NiTi, and thickness is 2nm; The 4th compound medium layer is by Si
3n
4form with AZO, thickness is respectively 18nm and 24nm; Top protective layer is by ZrO
2form, thickness is 10nm.
Preparation can tempering three-silver low radiation glass method step successively:
(1) substrate of glass is cleaned up and dried up, be placed in vacuum sputtering district;
(2) in substrate of glass, adopt the mode of magnetron sputtering to deposit Si
3n
4layer, target used is Si rotary target, and power supply is intermediate frequency power supply, and power is 10 ~ 100KW, and process gas is the mist of argon gas and nitrogen;
(3) at Si
3n
4layer adopts the mode of magnetron sputtering to deposit AZO layer above, and target used is ceramic AZO rotary target, and power supply is intermediate frequency power supply, and power is 10 ~ 100KW, and process gas is the mist of pure argon or argon gas and oxygen;
(4) on AZO layer, adopt the mode of magnetron sputtering to deposit NiTi layer, target used is NiTi flat target, and power supply is that direct current adds the pulse power, and power is 1 ~ 10KW, and process gas is pure argon;
(5) on NiTi layer, adopt the mode of magnetron sputtering to deposit AgCu layer, target used is AgCu flat target, and power supply is that direct current adds the pulse power, and power is 1 ~ 10KW, and process gas is pure argon;
(6) on AgCu layer, adopt the mode of magnetron sputtering to deposit NiTi layer, target used is NiTi flat target, and power supply is that direct current adds the pulse power, and power is 1 ~ 10KW, and process gas is pure argon;
(7) on NiTi layer, adopt the mode of magnetron sputtering to deposit AZO layer, target used is ceramic AZO rotary target, and power supply is intermediate frequency power supply, and power is 10 ~ 100KW, and process gas is the mist of pure argon or argon gas and oxygen;
(8) on AZO layer, adopt the mode of magnetron sputtering to deposit Si
3n
4layer, target used is Si rotary target, and power supply is intermediate frequency power supply, and power is 10 ~ 100KW, and process gas is the mist of argon gas and nitrogen;
(9) at Si
3n
4layer adopts the mode of magnetron sputtering to deposit AZO layer above, and target used is ceramic AZO rotary target, and power supply is intermediate frequency power supply, and power is 10 ~ 100KW, and process gas is the mist of pure argon or argon gas and oxygen;
(10) on AZO layer, adopt the mode of magnetron sputtering to deposit NiTi layer, target used is NiTi flat target, and power supply is that direct current adds the pulse power, and power is 1 ~ 10KW, and process gas is pure argon;
(11) on NiTi layer, adopt the mode of magnetron sputtering to deposit AgCu layer, target used is AgCu flat target, and power supply is that direct current adds the pulse power, and power is 1 ~ 10KW, and process gas is pure argon;
(12) on AgCu layer, adopt the mode of magnetron sputtering to deposit NiTi layer, target used is NiTi flat target, and power supply is that direct current adds the pulse power, and power is 1 ~ 10KW, and process gas is pure argon;
(13) on NiTi layer, adopt the mode of magnetron sputtering to deposit AZO layer, target used is ceramic AZO rotary target, and power supply is intermediate frequency power supply, and power is 10 ~ 100KW, and process gas is the mist of pure argon or argon gas and oxygen;
(14) on AZO layer, adopt the mode of magnetron sputtering to deposit Si
3n
4layer, target used is Si rotary target, and power supply is intermediate frequency power supply, and power is 10 ~ 100KW, and process gas is the mist of argon gas and nitrogen;
(15) at Si
3n
4layer adopts the mode of magnetron sputtering to deposit AZO layer above, and target used is ceramic AZO rotary target, and power supply is intermediate frequency power supply, and power is 10 ~ 100KW, and process gas is the mist of pure argon or argon gas and oxygen;
(16) on AZO layer, adopt the mode of magnetron sputtering to deposit NiTi layer, target used is NiTi flat target, and power supply is that direct current adds the pulse power, and power is 1 ~ 10KW, and process gas is pure argon;
(17) on NiTi layer, adopt the mode of magnetron sputtering to deposit AgCu layer, target used is AgCu flat target, and power supply is that direct current adds the pulse power, and power is 1 ~ 10KW, and process gas is pure argon;
(18) on AgCu layer, adopt the mode of magnetron sputtering to deposit NiTi layer, target used is NiTi flat target, and power supply is that direct current adds the pulse power, and power is 1 ~ 10KW, and process gas is pure argon;
(19) on NiTi layer, adopt the mode of magnetron sputtering to deposit AZO layer, target used is ceramic AZO rotary target, and power supply is intermediate frequency power supply, and power is 10 ~ 100KW, and process gas is the mist of pure argon or argon gas and oxygen;
(20) on AZO layer, adopt the mode of magnetron sputtering to deposit Si
3n
4layer, target used is Si rotary target, and power supply is intermediate frequency power supply, and power is 10 ~ 100KW, and process gas is the mist of argon gas and nitrogen;
(21) at Si
3n
4layer adopts the mode of magnetron sputtering to deposit ZrO above
2layer, target used is metallic Z r flat target, and power supply is that direct current adds the pulse power, and power is 10 ~ 100KW, and process gas is the mist of argon gas and oxygen.
The above, it is only preferred embodiment of the present invention, not the present invention is done to any pro forma restriction, although the present invention discloses as above with preferred embodiment, but not in order to limit the present invention, any those skilled in the art, do not departing within the scope of technical solution of the present invention, when can utilizing the technology contents of above-mentioned announcement to make a little change or being modified to the equivalent embodiment of equivalent variations, in every case be not depart from technical solution of the present invention content, any simple modification of above embodiment being done according to technical spirit of the present invention, equivalent variations and modification, all still belong in the scope of technical solution of the present invention.
Claims (10)
1. a three-silver low radiation glass; it comprises substrate of glass; it is characterized in that, this three-silver low radiation glass also comprises the first compound medium layer, the first bottom protective layer, the first infrared reflecting layer, the first upper protective layer, the second compound medium layer, the second bottom protective layer, the second infrared reflecting layer, the second upper protective layer, the 3rd compound medium layer, the 3rd bottom protective layer, the 3rd infrared reflecting layer, the 3rd upper protective layer, the 4th compound medium layer and the top protective layer that are formed at successively in this substrate of glass.
2. three-silver low radiation glass as claimed in claim 1, is characterized in that: this first compound medium layer, this second compound medium layer, the 3rd compound medium layer and the 4th compound medium layer comprise respectively Zinc-aluminium.
3. three-silver low radiation glass as claimed in claim 1, it is characterized in that: this first compound medium layer, this second compound medium layer, the 3rd compound medium layer and the 4th compound medium layer are combined by multilayer dielectricity layer respectively, and at this first compound medium layer, this second compound medium layer, the 3rd compound medium layer and corresponding and the first bottom protective layer in the 4th compound medium layer, the first upper protective layer, the second bottom protective layer, the second upper protective layer, the 3rd bottom protective layer, the dielectric layer that the 3rd upper protective layer or top protective layer contact is to be formed by Zinc-aluminium.
4. three-silver low radiation glass as claimed in claim 1, it is characterized in that: the thickness of this first compound medium layer is 15 ~ 45nm, the thickness of this second compound medium layer is that the thickness of 55 ~ 80nm, the 3rd compound medium layer is 55 ~ 80nm, and the thickness of the 4th compound medium layer is 25 ~ 40nm.
5. three-silver low radiation glass as claimed in claim 1, is characterized in that: this first infrared reflecting layer, this second infrared reflecting layer and the 3rd infrared reflecting layer are respectively to be formed by Kufil, and in Kufil, silver is 1:1 ~ 100:1 with the mass ratio of copper.
6. three-silver low radiation glass as claimed in claim 1, is characterized in that: the thickness of this first infrared reflecting layer is 8 ~ 15nm, and the thickness of this second infrared reflecting layer is 9 ~ 17nm, and the thickness of the 3rd infrared reflecting layer is 10 ~ 20nm.
7. three-silver low radiation glass as claimed in claim 6, is characterized in that: the thickness of this first infrared reflecting layer is less than the thickness of this second infrared reflecting layer, the thickness of this second infrared reflecting layer is less than the thickness of the 3rd infrared reflecting layer.
8. three-silver low radiation glass as claimed in claim 1; it is characterized in that: this first bottom protective layer, this first upper protective layer, this second bottom protective layer, this second upper protective layer, the 3rd bottom protective layer and the 3rd upper protective layer are respectively to be formed by Nitinol; and in Nitinol, the mass ratio of nickel and titanium is 1:1 ~ 10:1.
9. three-silver low radiation glass as claimed in claim 1, is characterized in that: the thickness of this first bottom protective layer, this first upper protective layer, this second bottom protective layer, this second upper protective layer, the 3rd bottom protective layer and the 3rd upper protective layer is respectively 0.5 ~ 5nm.
10. a preparation method for three-silver low radiation glass, it comprises the following steps:
Substrate of glass is provided;
By rotating cathode, midfrequent AC power supply magnetron sputtering deposits the first compound medium layer in this substrate of glass;
By planar cathode, direct current or direct current add pulse power magnetron sputtering and deposit the first bottom protective layer on this first compound medium layers;
By planar cathode, direct current or direct current add pulse power magnetron sputtering and deposit the first infrared reflecting layer in this first bottom protective layer;
By planar cathode, direct current or direct current add pulse power magnetron sputtering and deposit the first upper protective layer on this first infrared reflecting layers;
In this first upper protective layer, deposit the second compound medium layer by rotating cathode, midfrequent AC power supply magnetron sputtering;
By planar cathode, direct current or direct current add pulse power magnetron sputtering and deposit the second bottom protective layer on this second compound medium layers;
By planar cathode, direct current or direct current add pulse power magnetron sputtering and deposit the second infrared reflecting layer in this second bottom protective layer;
By planar cathode, direct current or direct current add pulse power magnetron sputtering and deposit the second upper protective layer on this second infrared reflecting layers;
In this second upper protective layer, deposit the 3rd compound medium layer by rotating cathode, midfrequent AC power supply magnetron sputtering;
Add pulse power magnetron sputtering by planar cathode, direct current or direct current and on the 3rd compound medium layer, deposit the 3rd bottom protective layer;
Add pulse power magnetron sputtering by planar cathode, direct current or direct current and in the 3rd bottom protective layer, deposit the 3rd infrared reflecting layer;
Add pulse power magnetron sputtering by planar cathode, direct current or direct current and on the 3rd infrared reflecting layer, deposit the 3rd upper protective layer;
In the 3rd upper protective layer, deposit the 4th compound medium layer by rotating cathode, midfrequent AC power supply magnetron sputtering; And
Add pulse power magnetron sputtering by planar cathode, direct current or direct current and deposit top protective layer on the 4th compound medium layer.
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| CN105152549A (en) * | 2015-05-26 | 2015-12-16 | 信义玻璃工程（东莞）有限公司 | Coated glass and preparation method thereof |
| CN105271813A (en) * | 2015-09-28 | 2016-01-27 | 赛柏利安工业技术（苏州）有限公司 | Membrane deposition method of three-silver energy saving glass of selective sunlight filtering membrane system |
| CN108118307A (en) * | 2018-02-08 | 2018-06-05 | 广东中钛节能科技有限公司 | Flexible intelligent spectral selection thermal isolation film and preparation method thereof |
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| CN108118307A (en) * | 2018-02-08 | 2018-06-05 | 广东中钛节能科技有限公司 | Flexible intelligent spectral selection thermal isolation film and preparation method thereof |
| CN111675494A (en) * | 2020-06-04 | 2020-09-18 | 中建材佳星玻璃(黑龙江)有限公司 | Single-silver LOW-E coated glass |
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