CN109728792A - Acoustic equipment and its packaging method - Google Patents

Acoustic equipment and its packaging method Download PDF

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Publication number
CN109728792A
CN109728792A CN201910005934.7A CN201910005934A CN109728792A CN 109728792 A CN109728792 A CN 109728792A CN 201910005934 A CN201910005934 A CN 201910005934A CN 109728792 A CN109728792 A CN 109728792A
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substrate
acoustic equipment
acoustical device
pad
acoustical
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CN201910005934.7A
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CN109728792B (en
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王晔晔
陈威
刘海玲
陈高鹏
于涛
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Ideal Semiconductor (suzhou) Co Ltd
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Ideal Semiconductor (suzhou) Co Ltd
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Abstract

The disclosure provides a kind of acoustic equipment and its packaging method.Acoustic equipment includes: the substrate and acoustical device being oppositely arranged, and is equipped with ring-shaped article, between substrate and acoustical device to form airtight chamber between substrate, ring-shaped article and acoustical device;The surface of the close acoustical device of substrate is equipped with connection pad;The surface of the separate acoustical device of substrate is equipped with the pin pad of acoustic equipment, and the pin pad of acoustic equipment is electrically connected by connecting pad with the pin pad of acoustical device.The disclosure is by carrying out base Board level packaging to acoustical device, it can be achieved that size is small, and production is simple, semiconductor equipment that is cheap, and being easily integrated.

Description

Acoustic equipment and its packaging method
Technical field
This disclosure relates to semiconductor field, in particular to a kind of acoustic equipment and its packaging method.
Background technique
Currently, encapsulating in the related technology in acoustical device, Metal Packaging, Plastic Package or surface mount packages are generallyd use Mode.
Summary of the invention
Inventors discovered through research that in existing encapsulation technology there is common lack in Metal Packaging and plastic package Point, i.e., pin is longer, causes the volume of device too big, is difficult to integrate with RF front-end module.And the table based on ceramics Dress is sealed, complex manufacturing technology, ceramic material HTCC and LTCC price is difficult to integrate with other techniques, meanwhile, it is existing Acoustical device of some based on wafer-level packaging, there is also technique is relatively difficult to achieve, defect at high cost.Therefore, it is necessary to find A kind of method, size is small, and production is simple, packaging method that is cheap, and being easy to integrate with other devices.
For this purpose, the disclosure provides, a kind of achievable size is small, and production is simple, encapsulation side that is cheap, and being easily integrated Case.
According to the one aspect of one or more other embodiments of the present disclosure, a kind of acoustic equipment is provided, comprising: be oppositely arranged Substrate and acoustical device, between the substrate and the acoustical device be equipped with ring-shaped article, so as in the substrate, the ring Airtight chamber is formed between shape part and the acoustical device;The surface close to the acoustical device of the substrate is equipped with connection Pad;The surface far from the acoustical device of the substrate is equipped with the pin pad of acoustic equipment, the acoustic equipment Pin pad is electrically connected by the connection pad with the pin pad of the acoustical device.
In some embodiments, the connection pad is electrically connected by the pin pad of metal routing and the acoustic equipment It connects.
In some embodiments, the substrate is equipped with via hole, and the metal routing extends along the via hole.
In some embodiments, the pin pad of the acoustical device is located at the close substrate of the acoustical device On surface.
In some embodiments, the pin pad of the acoustic equipment is aluminium pillar, copper pillar or tin ball.
In some embodiments, the height of the airtight chamber is greater than predetermined threshold.
In some embodiments, the surface close to the acoustical device of the substrate, which is equipped with, covers the acoustical device Encapsulated layer.
In some embodiments, the acoustical device includes surface acoustic wave SAW filter, bulk acoustic wave BAW filter or thin Membrane body sound wave FBAR filter, or including surface acoustic wave SAW duplexer, bulk acoustic wave BAW duplexer or film bulk acoustic FBAR Duplexer, or include the device using the manufacture of SAW, BAW or FBAR technology.
In some embodiments, acoustic equipment further includes the electronic device for having heterojunction structure with the acoustical device, In: the electronic device and the acoustical device are located at the same side of the substrate, the pin pad of the electronic device with it is right The connection pad electrical connection answered.
In some embodiments, the pin pad of the electronic device is by rerouting layer RDL and corresponding connection pad Electrical connection.
In some embodiments, the electronic device includes being based on GaAs HBT technique, GaAs pHEMT technique or GaN work The radio-frequency power amplifier of skill, based on the low-noise amplifier of GaAs pHEMT technique, based on the switch of GaAs pHEMT technique, At least one of filter based on IPD technique.
In some embodiments, the electronic device includes driving stage circuit, switching circuit, the electricity of radio-frequency power amplifier Source tracks circuit, envelope-tracking circuit, DC-DC conversion circuit, analog to digital conversion circuit, at least one in D/A converting circuit It is a.
According to the other side of one or more other embodiments of the present disclosure, a kind of packaging method of acoustic equipment is provided, It include: that ring-shaped article is generated on acoustical device;Connection pad is generated on a surface of substrate, in another table of the substrate The pin pad that acoustic equipment is generated on face, wherein the connection pad is electrically connected with the pin pad of the acoustic equipment;It will Acoustical device and the substrate combine, to form closed chamber between the substrate, the ring-shaped article and the acoustical device The pin pad of room, the acoustic equipment is electrically connected by the connection pad with the pin pad of the acoustical device.
In some embodiments, the connection pad is electrically connected by the pin pad of metal routing and the acoustic equipment It connects.
In some embodiments, the metal routing extends along the via hole of setting on the substrate.
In some embodiments, the pin pad of the acoustical device is arranged in the close base of the acoustical device On the surface of plate.
In some embodiments, the height of the airtight chamber is greater than predetermined threshold.
In some embodiments, encapsulated layer is formed on the surface close to the acoustical device of the substrate, with covering The acoustical device.
In some embodiments, will there is the electronic device of heterojunction structure to be arranged with the acoustical device in the substrate On, wherein the pin pad of electronic device is connected with corresponding connection pad.
In some embodiments, by rerouting layer RDL, the pin pad of the electronic device is welded with corresponding pin Disk connection.
By the detailed description referring to the drawings to the exemplary embodiment of the disclosure, the other feature of the disclosure and its Advantage will become apparent.
Detailed description of the invention
In order to illustrate more clearly of the embodiment of the present disclosure or technical solution in the prior art, to embodiment or will show below There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this Disclosed some embodiments without any creative labor, may be used also for those of ordinary skill in the art To obtain other drawings based on these drawings.
Fig. 1 is the schematic diagram of disclosure acoustic equipment one embodiment;
Fig. 2 is the schematic diagram of another embodiment of disclosure acoustic equipment;
Fig. 3 is the schematic diagram of the another embodiment of disclosure acoustic equipment;
Fig. 4 is the schematic diagram of the another embodiment of disclosure acoustic equipment;
Fig. 5 is the schematic diagram of disclosure acoustic equipment packaging method one embodiment;
Fig. 6 to Figure 16 is the schematic diagram of substrate level packaging methods one embodiment of disclosure acoustic equipment.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present disclosure, the technical solution in the embodiment of the present disclosure is carried out clear, complete Site preparation description, it is clear that described embodiment is only disclosure a part of the embodiment, instead of all the embodiments.Below Description only actually at least one exemplary embodiment be it is illustrative, never as to the disclosure and its application or making Any restrictions.Based on the embodiment in the disclosure, those of ordinary skill in the art are not making creative work premise Under every other embodiment obtained, belong to the disclosure protection range.
Unless specifically stated otherwise, positioned opposite, the digital table of the component and step that otherwise illustrate in these embodiments Up to the unlimited the scope of the present disclosure processed of formula and numerical value.
Simultaneously, it should be appreciated that for ease of description, the size of various pieces shown in attached drawing is not according to reality Proportionate relationship draw.
Technology, method and apparatus known to person of ordinary skill in the relevant may be not discussed in detail, but suitable In the case of, the technology, method and apparatus should be considered as authorizing part of specification.
It is shown here and discuss all examples in, any occurrence should be construed as merely illustratively, without It is as limitation.Therefore, the other examples of exemplary embodiment can have different values.
It should also be noted that similar label and letter indicate similar terms in following attached drawing, therefore, once a certain Xiang Yi It is defined in a attached drawing, then in subsequent attached drawing does not need that it is further discussed.
Fig. 1 is the schematic diagram of disclosure acoustic equipment one embodiment.As shown in Figure 1, acoustic equipment includes being oppositely arranged Substrate 1 and acoustical device 2.It is equipped with ring-shaped article 3, between substrate 1 and acoustical device 2 so as in substrate 1,3 harmony of ring-shaped article It learns and forms airtight chamber 31 between device 2.
It should be noted that the shape of ring-shaped article 3 is not limited to circle, it can also be the other shapes such as oval, rectangular.Example Such as, by making cofferdam on acoustic wave device wafer to form ring-shaped article 3.
In some embodiments, ring-shaped article 3 is combined by adhesive means with substrate 1 and acoustical device 2.
In some embodiments, the height of airtight chamber 31 is greater than predetermined threshold.For example, the height of airtight chamber 31 is greater than Or it is equal to 1 μm.In addition, the active area in acoustical device 2 need to be protected using passivation.
The surface of the close acoustical device 2 of substrate 1 is equipped with connection pad 11 and 12.The separate acoustical device 2 of substrate 1 Surface is equipped with the pin pad 13 and 14 of acoustic equipment.The pin pad 13 of acoustic equipment passes through connection pad 11 and acoustics device The pin pad 21 of part is electrically connected, the pin pad 22 that the pin pad 14 of acoustic equipment passes through connection pad 12 and acoustical device Electrical connection.
In some embodiments, as shown in Figure 1, the pin pad 21 and 22 of acoustical device 2 is located at the close of acoustical device 2 On the surface of substrate 1.For example, the pin pad 21 and 22 of acoustical device 2 can be aluminium pillar or copper pillar.
In some embodiments, as shown in Figure 1, tin ball 23 is additionally provided on the pin pad 21 of acoustical device 2, in acoustics Tin ball 24 is additionally provided on the pin pad 22 of device 2.By setting tin ball 23 and 24, it can be achieved that connection pad 11 and acoustical device Pin pad 21 be electrically connected, and realize connection pad 12 be electrically connected with the pin pad 22 of acoustical device.
In some embodiments, connection pad is electrically connected by metal routing with the pin pad of acoustic equipment.For example, such as Shown in Fig. 1, connection pad 11 is electrically connected by metal routing 15 with the pin pad 13 of acoustic equipment, and connection pad 12 passes through gold Belong to cabling 16 to be electrically connected with the pin pad 14 of acoustic equipment.The material of metal routing can for gold, silver, copper, iron, aluminium, nickel, palladium or Tin etc..
In some embodiments, as shown in Figure 1, substrate 1 is equipped with via hole 17 and 18.Metal routing 15 prolongs along via hole 17 It stretches, metal routing 16 extends along via hole 18.Thus it is convenient to realize the pin pad 13 of connection pad 11 and acoustic equipment Electrical connection, the pin pad 14 for connecting pad 12 and acoustic equipment are electrically connected
In some embodiments, the pin pad 13,14 of acoustic equipment can be aluminium pillar, copper pillar or tin ball.
In some embodiments, acoustical device 2 may include surface acoustic wave SAW filter, bulk acoustic wave BAW filter or film Bulk acoustic wave FBAR filter, or it is bis- including surface acoustic wave SAW duplexer, bulk acoustic wave BAW duplexer or film bulk acoustic FBAR Work device, or include the device using the manufacture of SAW, BAW or FBAR technology.
It, can by carrying out the encapsulation of acoustical device using substrate in disclosure acoustic equipment provided by the above embodiment Realize that size is small, production is simple, sealed in unit that is cheap, and being easily integrated.
Fig. 2 is the schematic diagram of another embodiment of disclosure acoustic equipment.Fig. 2 the difference from Fig. 1 is that, in Fig. 2 institute Show in embodiment, the surface of the close acoustical device 2 of substrate 1 is equipped with the encapsulated layer 20 of covering acoustical device 2.
In some embodiments, using insulating materials (such as: plastics) as encapsulated layer 20 to cover acoustical device 2, Overall package is carried out to acoustic equipment to realize.
Fig. 3 is the schematic diagram of the another embodiment of disclosure acoustic equipment.Fig. 3 the difference from Fig. 1 is that, in Fig. 3 institute Show in embodiment, further includes the electronic device 4 that there is heterojunction structure with acoustical device 2 in acoustic equipment.
Electronic device 4 and acoustical device 2 are located at the same side of substrate 1, the pin pad 41 of electronic device 4 and corresponding company Connect the electrical connection of pad 11.
In some embodiments, the pin pad 41 of electronic device 4 is welded by rerouting layer RDL 42 with corresponding connection Disk 11 is electrically connected.
In some embodiments, electronic device includes based on GaAs HBT technique, GaAs pHEMT technique or GaN technique Radio-frequency power amplifier is based on based on the low-noise amplifier of GaAs pHEMT technique based on the switch of GaAs pHEMT technique At least one of the filter of IPD technique.
In addition, electronic device may also include driving stage circuit, switching circuit, the power supply trace electricity of radio-frequency power amplifier At least one of road, envelope-tracking circuit, DC-DC conversion circuit, analog to digital conversion circuit, D/A converting circuit.
Fig. 4 is the schematic diagram of the another embodiment of disclosure acoustic equipment.Fig. 4 the difference from Fig. 3 is that, in Fig. 4 institute Show in embodiment, the electronic device of multiple and different types is set on substrate 1.As shown in figure 4, acoustics device is arranged on substrate 1 Part 2 has with acoustical device 2 except the electronic device 4 of heterojunction structure, and also settable another and acoustical device 2 has hetero-junctions The electronic device 5 of structure.The pin pad 51 of electronic device 5 can be electrically connected by RDL 52 with corresponding connection pad 12.
That is, multiple acoustical devices and related electronic device can be integrated on same substrate 1.
Fig. 5 is the schematic diagram of disclosure acoustic equipment packaging method one embodiment.
In step 501, ring-shaped article is generated on acoustical device.
It should be noted that the shape of ring-shaped article is not limited to circle, it can also be the other shapes such as oval, rectangular.Example Such as, by making cofferdam on acoustic wave device wafer to form ring-shaped article.
In step 502, connection pad is generated on a surface of substrate, and acoustics is generated on another surface of substrate and is set Standby pin pad, wherein connection pad is electrically connected with the pin pad of acoustic equipment.
In some embodiments, connection pad is electrically connected by metal routing with the pin pad of acoustic equipment.For example, golden Belong to cabling to extend along the via hole being disposed on the substrate.
In step 503, acoustical device and substrate are combined, it is close to be formed between substrate, ring-shaped article and acoustical device Closed chamber room, the pin pad of acoustic equipment are electrically connected by connecting pad with the pin pad of acoustical device.
In some embodiments, the height of airtight chamber is greater than predetermined threshold.For example, the height of airtight chamber is greater than or waits In 1 μm.
In some embodiments, the pin pad of acoustical device is arranged on the surface of close substrate of acoustical device.
In disclosure acoustic equipment packaging method provided by the above embodiment, by carrying out acoustical device using substrate Encapsulation is, it can be achieved that size is small, and production is simple, sealed in unit that is cheap, and being easily integrated.
In some implementations, encapsulated layer is formed on the surface of the close acoustical device of substrate, to cover acoustical device.
In some embodiments, with acoustical device will there is the electronic device of heterojunction structure to be disposed on the substrate, wherein electricity The pin pad of sub- device is connected with corresponding connection pad.For example, the pin of electronic device is welded by rerouting layer RDL Disk is connected with corresponding pin pad.Multiple acoustical devices and related electronic device can be integrated on the same substrate as a result,.
The wafer-level packaging method of the disclosure is illustrated below by a specific example.
As shown in Figure 6 and Figure 7, acoustical device is drawn by way of aluminium pillar, copper pillar on acoustical device wafer 61 Pin 611 and 612.Fig. 6 is top view, and Fig. 7 is side view.
As shown in Figure 8 and Figure 9, cofferdam 613 is made on acoustic wave device wafer.The upper and lower surface in cofferdam 613 is coated with one layer Glue, so that cofferdam 613 is pasted together with acoustical device wafer 61.Fig. 8 is top view, and Fig. 9 is side view.
As shown in Figure 10 and Figure 11, pad 621 and 622 is made in the upper surface of substrate 62.Tin ball is made on pad 621 623, tin ball 624 is made on pad 622.Substrate 62 can be multilager base plate.Inside substrate, by the way that 625 He of via hole is arranged 626, metal routing is set in via hole 625 and 626, so that the pin of upper surface is introduced into lower surface.Figure 10 is top view, Figure 11 is side view.
As shown in figure 12, acoustic wave device wafer is cut, to obtain corresponding acoustic wave device.
As shown in figure 13, it by acoustic wave device by the way of back-off, welds on the substrate 62, so that pad 611 and tin ball 623 connections, pad 612 are connect with tin ball 624.In addition, cofferdam 613, acoustical device wafer 61 and substrate 62 constitute closing chamber Body 614.The height of the closed cavity 614 is greater than or equal to 1 μm.In addition, the active area in acoustic wave device is protected using passivation Shield.
For example, acoustic wave device is mounted via capturing and placing the back-off of (Pick-and-Place) process onto substrate.
As shown in figure 14, in the lower surface of substrate 62, by growing aluminium pillar, the mode of copper pillar or tin ball, production Pin 627 and 628.
As shown in figure 15, overall package is carried out to acoustic wave device.The material of encapsulated layer 63 is insulating materials, such as plastics.
As shown in figure 16, by cutting, to obtain the acoustical device of base Board level packaging.
The disclosure carries out the base Board level packaging of acoustical device by using substrate, realizes that size is small, production is simple, and price is low Encapsulation scheme that is honest and clean, and being easily integrated.Meanwhile being connect acoustical device with substrate by way of back-off, it realizes acoustics Device and integrated CMOS tube core and SOI tube core, and radio-frequency power amplifier tube core based on GaAs technique it is heterogeneous be integrated in it is same In a encapsulation, the high strike of the inexpensive CMOS or SOI tube core based on Si, high integration characteristic and GaAs technique is made full use of Voltage and high electron mobility characteristic are worn, is widely used in radio-frequency power amplifier and fan-out-type chip-scale The high density of encapsulation wiring layer (Re-DistributeLayer, referred to as: RDL) characteristic again, realizes low cost and high performance radio frequency Power amplifier chip.
The description of the disclosure is given for the purpose of illustration and description, and is not exhaustively or by the disclosure It is limited to disclosed form.Many modifications and variations are obvious for the ordinary skill in the art.It selects and retouches Embodiment is stated and be the principle and practical application in order to more preferably illustrate the disclosure, and those skilled in the art is enable to manage The solution disclosure is to design various embodiments suitable for specific applications with various modifications.

Claims (20)

1. a kind of acoustic equipment, comprising:
The substrate and acoustical device being oppositely arranged are equipped with ring-shaped article, between the substrate and the acoustical device so as in institute It states and forms airtight chamber between substrate, the ring-shaped article and the acoustical device;
The surface close to the acoustical device of the substrate is equipped with connection pad;
The surface far from the acoustical device of the substrate is equipped with the pin pad of acoustic equipment, the pipe of the acoustic equipment Foot pad is electrically connected by the connection pad with the pin pad of the acoustical device.
2. acoustic equipment according to claim 1, in which:
The connection pad is electrically connected by metal routing with the pin pad of the acoustic equipment.
3. acoustic equipment according to claim 2, in which:
The substrate is equipped with via hole, and the metal routing extends along the via hole.
4. acoustic equipment according to claim 1, in which:
The pin pad of the acoustical device is located on the surface of the close substrate of the acoustical device.
5. acoustic equipment according to claim 1, in which:
The pin pad of the acoustic equipment is aluminium pillar, copper pillar or tin ball.
6. acoustic equipment according to claim 1, in which:
The height of the airtight chamber is greater than predetermined threshold.
7. acoustic equipment according to claim 1, in which:
The surface close to the acoustical device of the substrate is equipped with the encapsulated layer for covering the acoustical device.
8. acoustic equipment according to claim 1, in which:
The acoustical device includes surface acoustic wave SAW filter, bulk acoustic wave BAW filter or film bulk acoustic FBAR filter, Perhaps including surface acoustic wave SAW duplexer, bulk acoustic wave BAW duplexer or film bulk acoustic FBAR duplexer or including using The device of SAW, BAW or FBAR technology manufacture.
9. acoustic equipment according to claim 1 to 8 further includes having heterojunction structure with the acoustical device Electronic device, in which:
The electronic device and the acoustical device are located at the same side of the substrate, the pin pad of the electronic device with it is right The connection pad electrical connection answered.
10. acoustic equipment according to claim 9, in which:
The pin pad of the electronic device is electrically connected by rerouting layer RDL with corresponding connection pad.
11. acoustic equipment according to claim 10, in which:
The electronic device includes the radio-frequency power amplifier based on GaAs HBT technique, GaAs pHEMT technique or GaN technique, Based on the low-noise amplifier of GaAs pHEMT technique, based on the switch of GaAs pHEMT technique, the filter based on IPD technique At least one of.
12. acoustic equipment according to claim 11, in which:
The electronic device includes the driving stage circuit, switching circuit, power supply trace circuit, envelope-tracking of radio-frequency power amplifier At least one of circuit, DC-DC conversion circuit, analog to digital conversion circuit, D/A converting circuit.
13. a kind of packaging method of acoustic equipment, comprising:
Ring-shaped article is generated on acoustical device;
Connection pad is generated on a surface of substrate, and the pin weldering of acoustic equipment is generated on another surface of the substrate Disk, wherein the connection pad is electrically connected with the pin pad of the acoustic equipment;
Acoustical device and the substrate are combined, to be formed between the substrate, the ring-shaped article and the acoustical device The pin pad of airtight chamber, the acoustic equipment is electrically connected by the pin pad of the connection pad and the acoustical device It connects.
14. according to the method for claim 13, in which:
The connection pad is electrically connected by metal routing with the pin pad of the acoustic equipment.
15. according to the method for claim 14, in which:
The metal routing extends along the via hole of setting on the substrate.
16. according to the method for claim 13, in which:
The pin pad of the acoustical device is arranged on the surface of the close substrate of the acoustical device.
17. according to the method for claim 13, in which:
The height of the airtight chamber is greater than predetermined threshold.
18. according to the method for claim 13, further includes:
Encapsulated layer is formed on the surface close to the acoustical device of the substrate, to cover the acoustical device.
19. method described in any one of 3-18 according to claim 1, further includes:
The electronic device with the acoustical device with heterojunction structure is arranged on the substrate, wherein the pin of electronic device Pad is connected with corresponding connection pad.
20. according to the method for claim 19, in which:
By rerouting layer RDL, the pin pad of the electronic device is connected with corresponding pin pad.
CN201910005934.7A 2019-01-04 2019-01-04 Acoustic device and packaging method thereof Active CN109728792B (en)

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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106888001A (en) * 2017-03-08 2017-06-23 宜确半导体(苏州)有限公司 Acoustic wave device and its wafer-level packaging method
CN106921357A (en) * 2017-02-28 2017-07-04 宜确半导体(苏州)有限公司 Acoustic wave device and its wafer-level packaging method
CN108173525A (en) * 2017-03-24 2018-06-15 珠海晶讯聚震科技有限公司 Rf-resonator and wave filter
CN108259017A (en) * 2017-03-24 2018-07-06 珠海晶讯聚震科技有限公司 The manufacturing method of rf-resonator and wave filter
CN108313974A (en) * 2018-02-07 2018-07-24 宜确半导体(苏州)有限公司 Acoustic equipment and its wafer-level packaging method
CN108321123A (en) * 2018-02-07 2018-07-24 宜确半导体(苏州)有限公司 Acoustic equipment and its wafer-level packaging method
CN108512523A (en) * 2017-11-06 2018-09-07 贵州中科汉天下微电子有限公司 The encapsulating method and structure of piezoelectric sound wave device
JP2018152385A (en) * 2017-03-09 2018-09-27 日本山村硝子株式会社 Low-temperature seal member and method for manufacturing the same
CN108923766A (en) * 2018-02-05 2018-11-30 珠海晶讯聚震科技有限公司 Monocrystalline piezoelectric rf-resonator and filter with improved cavity

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106921357A (en) * 2017-02-28 2017-07-04 宜确半导体(苏州)有限公司 Acoustic wave device and its wafer-level packaging method
CN106888001A (en) * 2017-03-08 2017-06-23 宜确半导体(苏州)有限公司 Acoustic wave device and its wafer-level packaging method
JP2018152385A (en) * 2017-03-09 2018-09-27 日本山村硝子株式会社 Low-temperature seal member and method for manufacturing the same
CN108173525A (en) * 2017-03-24 2018-06-15 珠海晶讯聚震科技有限公司 Rf-resonator and wave filter
CN108259017A (en) * 2017-03-24 2018-07-06 珠海晶讯聚震科技有限公司 The manufacturing method of rf-resonator and wave filter
CN108512523A (en) * 2017-11-06 2018-09-07 贵州中科汉天下微电子有限公司 The encapsulating method and structure of piezoelectric sound wave device
CN108923766A (en) * 2018-02-05 2018-11-30 珠海晶讯聚震科技有限公司 Monocrystalline piezoelectric rf-resonator and filter with improved cavity
CN108313974A (en) * 2018-02-07 2018-07-24 宜确半导体(苏州)有限公司 Acoustic equipment and its wafer-level packaging method
CN108321123A (en) * 2018-02-07 2018-07-24 宜确半导体(苏州)有限公司 Acoustic equipment and its wafer-level packaging method

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