CN108313974A - Acoustic equipment and its wafer-level packaging method - Google Patents
Acoustic equipment and its wafer-level packaging method Download PDFInfo
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- CN108313974A CN108313974A CN201810119988.1A CN201810119988A CN108313974A CN 108313974 A CN108313974 A CN 108313974A CN 201810119988 A CN201810119988 A CN 201810119988A CN 108313974 A CN108313974 A CN 108313974A
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- substrate
- acoustic equipment
- pin pad
- acoustical device
- acoustic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0006—Interconnects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/07—Interconnects
Abstract
A kind of acoustic equipment of disclosure offer and its wafer-level packaging method, are related to semiconductor applications.The acoustic equipment includes substrate and acoustical device, wherein acoustical device is combined with the first surface of substrate, to form airtight chamber between acoustical device and the first surface of substrate, the second surface of the separate acoustical device of substrate is equipped with the pin pad of acoustic equipment, and the pin pad of acoustic equipment and the pin pad of acoustical device connect.The encapsulation of acoustical device is carried out by way of wafer and wafer direct bonding for the disclosure, it can be achieved that size is small, and making is simple, sealed in unit that is cheap, and being easily integrated.
Description
Technical field
The present invention relates to semiconductor applications, more particularly to a kind of acoustic equipment and its wafer-level packaging method.
Background technology
The pattern supported with mobile radio system and frequency range are continuously increased, Current wireless communication mobile terminal
RF front end structure also become to become increasingly complex.
Fig. 1 is one and supports the communication mobile terminal of multiple frequency ranges in 2G, 3G, 4G multi-mode and each pattern
RF front end structure.108 be the RF transceiver chip of mobile terminal, is responsible for the radiofrequency signal for generating baseband chip and sends
It is handled to corresponding power amplifier chip and to the radiofrequency signal received.107,105,106 be 2G power respectively
Amplifier chip, 3G/4G single-frequency power amplifier chip, 3G/4G multimode multi-frequency power amplifier chips, these chips all to from
The radiofrequency signal come transmitted by RF transceiver 108 carries out power amplification.104 be a series of duplexer chips, each FDD
The frequency range of pattern is required for a corresponding duplexer chip to be emitted and received the separation of signal.103 be one integrated
The hilted broadsword of low-pass filter throws radio-frequency antenna switch chip more, for by the output signals of multiple radio-frequency power amplifiers and
The radiofrequency signal that multichannel is received from antenna carries out branch separation, so that multiple radio-frequency transmissions accesses and multiple radio frequency receptions are logical
Road can share the same primary antenna 101.Hilted broadsword is thrown more usually all integrates two low-pass filtering in radio-frequency antenna switch chip 103
Device is respectively used to filter out the harmonic wave and 2G low-frequency ranges (820- of 2G high bands (1710-1910MHz) radio-frequency power amplifier
920MHz) the harmonic wave of radio-frequency power amplifier.102, which are one, is connected to primary antenna 101 and multimode multi-frequency radio frequency duplexer core
Antenna match tuning chip between piece 103, for being adjusted to ensure that good antenna resistance in real time to Antenna Impedance Matching
Anti- matching.111 be a diversity radio-frequency antenna switch chip, for the radiofrequency signal to being received from diversity antenna 112 into
Row branch detaches.110 be a series of filter chips, each road radio frequency for being exported to diversity radio-frequency antenna switch chip 111
Signal is filtered, and output signal is sent to the phase of RF transceiver chip 108 further through receiving path switch chip 109
Answer receiving port.
As seen from Figure 1, as the growth of multimode multi-frequency radio frequency front-end module demand, duplexer and filter will become
Main device.Filter segment is mainly realized using discrete inductance, capacitor element, or is realized using IPD techniques；Duplex
Device then mainly uses the acoustical devices such as surface acoustic wave (SAW), bulk acoustic wave (BAW), film bulk acoustic (BAW) to realize.Surface acoustic wave
It is that sound wave is propagated in body surface finite depth, is propagated along solid and Air Interface, meanwhile, surface acoustic wave is a kind of energy
Amount concentrates on the elastic wave of dielectric surface propagation；What bulk acoustic wave and film bulk acoustic utilized is that bulk acoustic wave signal is passed in different medium
Sowing time reflects in the boundary place of two electrodes and air, and bulk acoustic wave and film bulk acoustic form a sky with substrate surface
Sound wave is limited in piezoelectric vibration intracavitary by air cavity.It can be seen that for surface acoustic wave, bulk acoustic wave and film bulk acoustic all need
A closed cavity, the propagation path for limiting sound wave are formed at the interface with substrate.What acoustical device made
The advantages that filter and duplexer, insertion loss is small, and Out-of-band rejection is good, is widely used in wireless communication field.The side of encapsulation
Formula is broadly divided into:Metal Packaging, Plastic Package, surface mount packages.Their a minimum of two parts compositions, that is, the substrate encapsulated and upper
Lid.A small amount of binder is coated in substrate, and then chip is attached to above.By curing process, chip is firmly attached to
In substrate.
Metal Packaging：It is made of the metallic substrates comprising insulation and grounding pin and metal cap.It is put into pulse point
Sealing machine carries out sealing cap, obtains the good finished product of leakproofness.It is good that the common technique of Metal Packaging can produce leakproofness
Good high frequency filter, simultaneously because mechanical properties strength is high, it can be with the big chip of encapsulation volume.
Plastic Package：It is made of slot and cap two parts, chip is connected to by bonding line on lead frame, the lead of metal
Frame is stretched into from one side in slot, and finally two parts are bonded together.The main advantage of this encapsulation technology is at low cost.
Surface mount packages：Ceramic SMD (Surface Mounted Device:Surface mount device), using substrate and hat shape
Upper cover.Two kinds of technologies are used according to different purposes：For high-frequency element and the high device of high frequency accuracy, encapsulated using metal layer；
For low frequency device, encapsulated using plasticity sound-absorbing material.
Fig. 2 is to encapsulate schematic diagram using metal layer.Wherein 210 be substrate, and material is based on ceramic LTCC or HTCC techniques.
203 be acoustic filter or duplexer, by the way of back-off, by copper pillar or tin ball 204,205 and substrate 210
Pad 206,207 connects；And by the pad 211 of 210 interior metal cabling of substrate and via 208,209 and 210 bottom of substrate,
212 connections, draw the pin of acoustical device.201 be metal cap, is connected with substrate 210 by way of welding or gluing；Metal
Polymer material 202 is inserted in gap between cap 201 and acoustical device, is used to support metal cap, is prevented metal cap from collapsing.213 are
The airtight cavity formed between acoustical device and substrate.
Fig. 3 is to encapsulate schematic diagram using plasticity sound-absorbing material.Wherein 310 be substrate, material be based on ceramic LTCC or
HTCC techniques.303 be acoustic filter or duplexer, by the way of back-off, by copper pillar or tin ball 304,305 with
Pad 306,307 on 310 connects；And it is welded with 310 bottom of substrate by 310 interior metal cabling of substrate and via 308,309
Disk 311,312 connects, and draws the pin of acoustical device.301 be plasticity sound-absorbing material, by way of gluing with 310 phase of substrate
Even；Polymer material 302 is inserted in gap between plasticity sound-absorbing material and acoustical device, is used to support plasticity sound-absorbing material, is prevented
Plasticity sound-absorbing material collapses.313 airtight cavities formed between acoustical device and substrate.
Fig. 4 is the schematic diagram based on wafer-level packaging in the prior art, wherein 401 be acoustical device, in acoustical device
Upper surface makes filter or duplexer.402 be substrate, is made of Si techniques.403 be shading ring, passes through welding or glue
Viscous mode links together acoustical device 401 and substrate 402, plays the role of shielding and support；Acoustical device 401,
Airtight cavity 404 is formd between substrate 402 and shading ring 403, realizes one there must be between acoustical device and substrate
A cavity.Meanwhile the input and output pin 405,406 for drawing acoustical device is grown in the upper surface of acoustical device 401, along screen
The upper surface of substrate is guided in the outer surface for covering ring and substrate, by copper pillar or tin ball 407,408 by the pin of acoustical device
It draws.
Metal Packaging and plastic package have the shortcomings that common, have long pin, cause the volume of device too big, very
Hardly possible is integrated with RF front-end module.Based on the surface mount packages of ceramics, although being widely used, complex manufacturing technology, pottery
Ceramic material HTCC and LTCC price, and be difficult integrated with other techniques, meanwhile, it is existing based on wafer-level packaging
Acoustical device, there is also technique is relatively difficult to achieve, defect of high cost.Therefore, it is necessary to find a kind of method, size is small, system
Make simply, it is cheap, and it is easy to the packaging method integrated with other devices.
Invention content
A kind of acoustic equipment of disclosure offer and its wafer-level packaging method, by way of wafer and wafer direct bonding
The encapsulation of acoustical device is carried out, it can be achieved that size is small, making is simple, sealed in unit that is cheap, and being easily integrated.
According to the one side of one or more other embodiments of the present disclosure, a kind of acoustic equipment, including substrate harmony are provided
Device is learned, wherein：
Acoustical device is combined with the first surface of substrate, close to be formed between acoustical device and the first surface of substrate
Closed chamber room；
The second surface of the separate acoustical device of substrate is equipped with the pin pad of acoustic equipment, the pin pad of acoustic equipment
It is connect with the pin pad of acoustical device.
Optionally, the pin pad of acoustic equipment is connected by the pin pad of metal routing and acoustical device.
Optionally, the material of metal routing is gold, silver, copper, iron, aluminium, nickel, palladium or tin.
Optionally, metal routing extends along corresponding through-hole is arranged in substrate.
Optionally, the pin pad of acoustic equipment is aluminium pillar, copper pillar or tin ball.
Optionally, acoustical device is combined by adhesive means with the first surface of substrate.
Optionally, the pin pad of acoustical device is located on the surface of the close substrate of acoustical device.
Optionally, the height of airtight chamber is more than predetermined threshold.
Optionally, acoustical device includes surface acoustic wave SAW filter, bulk acoustic wave BAW filters or film bulk acoustic FBAR
Filter, either including surface acoustic wave SAW duplexers, bulk acoustic wave BAW duplexers or film bulk acoustic FBAR duplexers or packet
Include the device using the manufacture of SAW, BAW or FBAR technology.
Optionally, acoustic equipment further includes substrate, wherein：
Substrate is disposed on the substrate.
Optionally, acoustic equipment further includes the electronic device heterogeneous with acoustical device being disposed on the substrate, wherein：
The pin pad pin pad connection corresponding with acoustic equipment of electronic device.
Optionally, the pin pad of electronic device is connected by rerouting layer RDL, pin pad corresponding with acoustic equipment
It connects.
Optionally, electronic device includes the radio-frequency power based on GaAs HBT techniques, GaAs pHEMT techniques or GaN techniques
Amplifier is based on IPD techniques based on the low-noise amplifier of GaAs pHEMT techniques based on the switch of GaAs pHEMT techniques
At least one of filter.
Optionally, electronic device include the driving stage circuit of radio-frequency power amplifier, switching circuit, power supply trace circuit,
At least one of envelope-tracking circuit, DC-DC conversion circuit, analog to digital conversion circuit, D/A converting circuit.
According to the other side of one or more other embodiments of the present disclosure, a kind of wafer-level packaging of acoustic equipment is provided
Method, including：
Acoustical device is combined with the first surface of substrate, to be formed between acoustical device and the first surface of substrate
Airtight chamber；
The pin pad of the pin pad of acoustic equipment and acoustical device is connected, the pin pad of wherein acoustic equipment is set
Set the second surface in the separate acoustical device of substrate.
Optionally, the pin pad of the pin pad of acoustic equipment and acoustical device is connected by metal routing.
Optionally, metal routing extends along corresponding through-hole is arranged in substrate.
Optionally, acoustical device is combined with the first surface of substrate by adhesive means.
Optionally, the pin pad of acoustical device is arranged on the surface of the close substrate of acoustical device.
Optionally, the height of airtight chamber is more than predetermined threshold.
Optionally, the above method further includes：
Substrate is disposed on the substrate.
Optionally, the above method further includes：
The electronic device heterogeneous with acoustical device is disposed on the substrate, the pin pad of wherein electronic device is set with acoustics
Standby corresponding pin pad connects.
Optionally, by rerouting layer RDL, the pin pad of electronic device pin pad corresponding with acoustic equipment is connected
It connects.
By referring to the drawings to the detailed description of exemplary embodiment of the present invention, other feature of the invention and its
Advantage will become apparent.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention without having to pay creative labor, may be used also for those of ordinary skill in the art
With obtain other attached drawings according to these attached drawings.
Fig. 1 is wireless communication system RF front end structure schematic diagram in the prior art.
Fig. 2 is that acoustical device encapsulates a kind of schematic diagram of scheme in the prior art.
Fig. 3 is the schematic diagram that acoustical device encapsulates another program in the prior art.
Fig. 4 is the schematic diagram that acoustical device encapsulates another aspect in the prior art.
Fig. 5 is the schematic diagram of acoustic equipment one embodiment of the present invention.
Fig. 6 is the schematic diagram of another embodiment of acoustic equipment of the present invention.
Fig. 7 is the schematic diagram of the another embodiment of acoustic equipment of the present invention.
Fig. 8 is the schematic diagram of wafer-level packaging method one embodiment of acoustic equipment of the present invention.
Fig. 9 to Figure 16 is the schematic diagram of wafer-level packaging method one embodiment of acoustic equipment of the present invention.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Below
Description only actually at least one exemplary embodiment is illustrative, is never used as to the present invention and its application or makes
Any restrictions.Based on the embodiments of the present invention, those of ordinary skill in the art are not making creative work premise
Lower obtained every other embodiment, shall fall within the protection scope of the present invention.
Unless specifically stated otherwise, positioned opposite, the digital table of the component and step that otherwise illustrate in these embodiments
It is not limited the scope of the invention up to formula and numerical value.
Simultaneously, it should be appreciated that for ease of description, the size of attached various pieces shown in the drawings is not according to reality
Proportionate relationship draw.
Technology, method and apparatus known to person of ordinary skill in the relevant may be not discussed in detail, but suitable
In the case of, the technology, method and apparatus should be considered as authorizing part of specification.
In shown here and discussion all examples, any occurrence should be construed as merely illustrative, without
It is as limitation.Therefore, the other examples of exemplary embodiment can have different values.
It should be noted that：Similar label and letter indicate similar terms in following attached drawing, therefore, once a certain Xiang Yi
It is defined, then it need not be further discussed in subsequent attached drawing in a attached drawing.
Fig. 5 is the schematic diagram of acoustic equipment one embodiment of the present invention.As shown in figure 5, the acoustic equipment includes substrate 51
With acoustical device 52.Wherein：
Acoustical device 52 is combined with the first surface of substrate 51, so as to the first surface of acoustical device 52 and substrate 51 it
Between formed airtight chamber 53.
Optionally, acoustical device 52 is combined with substrate 51 by way of Direct Bonding.
Optionally, acoustical device 52 is combined by adhesive means with the first surface of substrate 51.For example, acoustical device 52 is logical
Glue 531 is crossed to be combined with the first surface of substrate 51.
The second surface of the separate acoustical device 52 of substrate 51 is equipped with the pin pad 541 and 542 of acoustic equipment, and acoustics is set
Standby pin pad 541,542 is connect with the pin pad of acoustical device 52 521,522 respectively.
Optionally, the pin pad 521,522 of acoustical device 52 is located on the surface of the close substrate 51 of acoustical device.
Wherein, substrate 51 is the substrate based on Si process materials, or the compound (such as glass) etc. based on Si.It is closed
The height of chamber 53 is more than predetermined threshold.For example, the height of airtight chamber 53 is greater than or equal to 1 μm.Simultaneously in acoustical device 52
Active area must use passivation be protected.
Optionally, the pin pad of acoustic equipment is connected by the pin pad of metal routing and acoustical device.For example, sound
The pin pad 541 for learning equipment is connect by metal routing 551 with the pin pad 521 of acoustical device 52, the pipe of acoustic equipment
Foot pad 542 is connect by metal routing 552 with the pin pad 522 of acoustical device 52.Wherein, the material of metal routing can be
Gold, silver, copper, iron, aluminium, nickel, palladium or tin etc..
Optionally, metal routing extends along corresponding through-hole is arranged in substrate, by the pin pad of acoustic equipment with
The pin pad of acoustical device is attached, to draw the pin of acoustical device.As shown in figure 5,521 He of connection pin pad
The metal routing 551 of pin pad 541 extends along through-hole 511, and the metal of connection pin pad 522 and pin pad 542 is walked
Line 552 extends along through-hole 512.
Optionally, the pin pad 541,542 of acoustic equipment can be aluminium pillar, copper pillar or tin ball.
Optionally, acoustical device 52 may include surface acoustic wave SAW filter, bulk acoustic wave BAW filters or film bulk acoustic
FBAR filters, or including surface acoustic wave SAW duplexers, bulk acoustic wave BAW duplexers or film bulk acoustic FBAR duplexers, or
Person includes the device using the manufacture of SAW, BAW or FBAR technology.
In above-described embodiment of disclosure acoustic equipment, acoustics device is carried out by way of wafer and wafer direct bonding
The encapsulation of part is, it can be achieved that size is small, and making is simple, sealed in unit that is cheap, and being easily integrated.
Fig. 6 is the schematic diagram of another embodiment of acoustic equipment of the present invention.As shown in fig. 6, can substrate be placed into substrate 51
On 56.
Optionally, multiple substrates being combined with acoustical device as shown in Figure 5 can be set on substrate 56, it can also be in base
Setting and the heterogeneous electronic device of acoustical device on plate 56.
As shown in fig. 6, setting and the heterogeneous electronic device 57 of acoustical device 52 on substrate 56.Wherein, electronic device 57
Corresponding with the acoustic equipment pin pad 541 of pin pad 571 connect.
Optionally, the pin pad 571 of electronic device 57 can be by rerouting layer RDL1, pin corresponding with acoustic equipment
Pad 541 connects.
Optionally, electronic device 57 may include the radio frequency based on GaAs HBT techniques, GaAs pHEMT techniques or GaN techniques
Power amplifier is based on IPD based on the low-noise amplifier of GaAs pHEMT techniques based on the switch of GaAs pHEMT techniques
At least one of filter of technique.
In addition, electronic device 57 may also include the driving stage circuit of radio-frequency power amplifier, switching circuit, power supply trace and
At least one of envelope-tracking circuit, DC-DC conversion circuit, analog to digital conversion circuit, D/A converting circuit.
Optionally, the electronic device of multiple and different types can be set on substrate 56.As shown in fig. 7, being set on substrate 56
It sets acoustical device 52, with except the heterogeneous electronic device 57 of acoustical device 52, it is heterogeneous that another and acoustical device 52 can be also set
Electronic device 58.Wherein the pin pad 581 of electronic device 58 can be connected by RDL2 pin pads 542 corresponding with acoustic equipment
It connects.
That is, multiple acoustical devices and related electronic device can be integrated on same substrate 56.
Fig. 8 is the schematic diagram of wafer-level packaging method one embodiment of acoustic equipment of the present invention.Wherein：
Step 801, acoustical device is combined with the first surface of substrate, so as in the first surface of acoustical device and substrate
Between form airtight chamber.
Optionally, the height of airtight chamber is more than predetermined threshold.For example, the height of airtight chamber is greater than or equal to 1 μm.
Optionally, acoustical device is combined with the first surface of substrate by adhesive means.
Step 802, the pin pad of the pin pad of acoustic equipment and acoustical device is connected, wherein the pipe of acoustic equipment
The second surface in the separate acoustical device of substrate is arranged in foot pad.
Optionally, the pin pad of the pin pad of acoustic equipment and acoustical device can be connected by metal routing.Gold
Belong to cabling and extends along corresponding through-hole is arranged in substrate.
Optionally, the pin pad of acoustical device is arranged on the surface of the close substrate of acoustical device.
In above-described embodiment of disclosure acoustic equipment wafer-level packaging method, pass through wafer and wafer direct bonding
Mode carries out the encapsulation of acoustical device, it can be achieved that size is small, and making is simple, sealed in unit that is cheap, and being easily integrated.
Optionally, above-mentioned substrate can be disposed on the substrate.The electronic device setting heterogeneous with acoustical device can also be existed
On substrate, the pin pad pin pad connection corresponding with acoustic equipment of wherein electronic device.
Wherein, the pin pad of electronic device pin pad corresponding with acoustic equipment can be connected by RDL.
The wafer-level packaging method of the disclosure is illustrated below by a specific example.
As shown in Figure 9 and Figure 10, acoustical device 92 is made on acoustical device wafer 91.Meanwhile leading on acoustical device
Cross aluminium pillar, the pin for the extraction acoustical device of pad 921,922 that copper pillar makes.Wherein Fig. 9 is vertical view, and Figure 10 is side view
Figure.
As is illustrated by figs. 11 and 12,93 be the substrate based on Si materials.The size of substrate 93 and acoustical device wafer size
It is identical, or more than the wafer of acoustical device.Meanwhile in one layer of glue 94 of substrate surface brush, the thickness of glue is less than 10 μm, generally takes
3μm.Wherein Figure 11 is upward view, and Figure 12 is side view.
As shown in figure 13, it will be bonded together by glue 94 with acoustical device wafer based on Si techniques substrate after brush coating,
Acoustical device pin 921,922 is fully embedded in glue 94, and forms an airtight chamber 95.
As shown in figure 14, through-hole 931,932 is made in the substrate based on Si techniques.
As shown in figure 15, metal wire 933,934 extends to substrate 93 respectively along the through-hole 931,932 in substrate 93
Upper surface, the material of metal wire 933,934 is gold, silver, copper, iron, aluminium, nickel, palladium, tin etc..On the surface of metal wire 933,934
Grow aluminium pillar, copper pillar or tin ball so that the pin of acoustical device draws 961,962, realizes the back-off of chip.
As shown in figure 16, by cutting, to form the wafer-level packaging acoustical device based on wafer and wafer direct bonding
97。
It should be noted that in above-mentioned packaging method flow, substrate 93 is usually a diameter of 8 inches or 12 inches
High resistant Si wafers, resistance value are higher than 1000ohmcm, or the compound based on Si, glass etc., the size of usual substrate 93
It is in the same size with acoustical device wafer.
The disclosure carries out the wafer-level packaging of acoustical device by using the mode of wafer and wafer direct bonding, realizes
Size is small, makes simple, encapsulation scheme that is cheap, and being easily integrated.Meanwhile by way of back-off by acoustical device with
Substrate connection is realized acoustical device and integrated CMOS tube core and SOI tube cores, and the amplification of the radio-frequency power based on GaAs techniques
Device tube core is heterogeneous to be integrated in the same encapsulation；Make full use of CMOS or SOI tube cores low cost, high integration based on Si special
The high-breakdown-voltage and high electron mobility characteristic of property and GaAs techniques, are widely used in radio-frequency power amplifier,
And the high density of fan-out-type chip-scale package again wiring layer (Re-Distribute Layer, referred to as：RDL) characteristic is realized
Low cost and high performance radio-frequency power amplifier chip.
Description of the invention provides for the sake of example and description, and is not exhaustively or will be of the invention
It is limited to disclosed form.Many modifications and variations are obvious for the ordinary skill in the art.It selects and retouches
It states embodiment and is to more preferably illustrate the principle of the present invention and practical application, and those skilled in the art is enable to manage
Various embodiments with various modifications of the solution present invention to design suitable for special-purpose.
Claims (23)
1. a kind of acoustic equipment, including substrate and acoustical device, wherein：
The acoustical device is combined with the first surface of the substrate, so as in the first table of the acoustical device and the substrate
Airtight chamber is formed between face；
The second surface far from the acoustical device of the substrate is equipped with the pin pad of acoustic equipment, the acoustic equipment
Pin pad is connect with the pin pad of the acoustical device.
2. acoustic equipment according to claim 1, wherein：
The pin pad of the acoustic equipment is connect by metal routing with the pin pad of the acoustical device.
3. acoustic equipment according to claim 2, wherein：
The material of the metal routing is gold, silver, copper, iron, aluminium, nickel, palladium or tin.
4. acoustic equipment according to claim 2, wherein：
Along setting, corresponding through-hole extends the metal routing on the substrate.
5. acoustic equipment according to claim 1, wherein：
The pin pad of the acoustic equipment is aluminium pillar, copper pillar or tin ball.
6. acoustic equipment according to claim 1, wherein：
The acoustical device is combined by adhesive means with the first surface of the substrate.
7. acoustic equipment according to claim 1, wherein：
The pin pad of the acoustical device is located on the surface of the close substrate of the acoustical device.
8. acoustic equipment according to claim 1, wherein：
The height of the airtight chamber is more than predetermined threshold.
9. acoustic equipment according to claim 1, wherein：
The acoustical device includes surface acoustic wave SAW filter, bulk acoustic wave BAW filters or film bulk acoustic FBAR filters,
Either including surface acoustic wave SAW duplexers, bulk acoustic wave BAW duplexers or film bulk acoustic FBAR duplexers or including using
The device of SAW, BAW or FBAR technology manufacture.
Further include substrate 10. according to the acoustic equipment described in any one of claim 1-9, wherein：
The substrate setting is on the substrate.
Further include setting on the substrate different with the acoustical device 11. acoustic equipment according to claim 10
The electronic device of matter, wherein：
The pin pad pin pad connection corresponding with the acoustic equipment of electronic device.
12. acoustic equipment according to claim 11, wherein：
The pin pad of electronic device is by rerouting layer RDL, pin pad connection corresponding with the acoustic equipment.
13. acoustic equipment according to claim 11, wherein：
The electronic device includes the radio-frequency power amplifier based on GaAs HBT techniques, GaAs pHEMT techniques or GaN techniques,
Based on the low-noise amplifier of GaAs pHEMT techniques, based on the switch of GaAs pHEMT techniques, the filter based on IPD techniques
At least one of.
14. acoustic equipment according to claim 11, wherein：
The electronic device includes driving stage circuit, switching circuit, power supply trace circuit, the envelope-tracking of radio-frequency power amplifier
At least one of circuit, DC-DC conversion circuit, analog to digital conversion circuit, D/A converting circuit.
15. a kind of wafer-level packaging method of acoustic equipment, including：
Acoustical device is combined with the first surface of substrate, so as between the acoustical device and the first surface of the substrate
Form airtight chamber；
The pin pad of the acoustic equipment is connect with the pin pad of the acoustical device, wherein the pipe of the acoustic equipment
The second surface far from the acoustical device in the substrate is arranged in foot pad.
16. the method according to claim 11, wherein：
The pin pad of the acoustic equipment is connect with the pin pad of the acoustical device by metal routing.
17. the method according to claim 11, wherein：
Along setting, corresponding through-hole extends the metal routing on the substrate.
18. the method according to claim 11, wherein：
The acoustical device is combined with the first surface of the substrate by adhesive means.
19. the method according to claim 11, wherein：
The pin pad of the acoustical device is arranged on the surface close to the substrate of the acoustical device.
20. the method according to claim 11, wherein：
The height of the airtight chamber is more than predetermined threshold.
21. according to the method described in any one of claim 15-20, further include：
The substrate is disposed on the substrate.
22. according to the method for claim 21, further including：
It will be arranged on the substrate with the heterogeneous electronic device of the acoustical device, wherein the pin pad of electronic device and institute
State the corresponding pin pad connection of acoustic equipment.
23. the method according to claim 11, wherein：
By rerouting layer RDL, the pin pad of electronic device pin pad corresponding with the acoustic equipment is connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810119988.1A CN108313974A (en) | 2018-02-07 | 2018-02-07 | Acoustic equipment and its wafer-level packaging method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN109728792A (en) * | 2019-01-04 | 2019-05-07 | 宜确半导体（苏州）有限公司 | Acoustic equipment and its packaging method |
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