CN109716490A - 一种tfet及其制备方法 - Google Patents
一种tfet及其制备方法 Download PDFInfo
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- CN109716490A CN109716490A CN201780003482.8A CN201780003482A CN109716490A CN 109716490 A CN109716490 A CN 109716490A CN 201780003482 A CN201780003482 A CN 201780003482A CN 109716490 A CN109716490 A CN 109716490A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 29
- 238000005530 etching Methods 0.000 claims abstract description 157
- 238000000034 method Methods 0.000 claims abstract description 131
- 239000000945 filler Substances 0.000 claims abstract description 71
- 230000008569 process Effects 0.000 claims abstract description 66
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 238000001259 photo etching Methods 0.000 claims abstract description 39
- 238000005468 ion implantation Methods 0.000 claims abstract description 33
- 238000011049 filling Methods 0.000 claims abstract description 19
- 239000010410 layer Substances 0.000 claims description 144
- 239000011241 protective layer Substances 0.000 claims description 60
- 230000004888 barrier function Effects 0.000 claims description 48
- 239000000463 material Substances 0.000 claims description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 21
- 229920005591 polysilicon Polymers 0.000 claims description 21
- 229910052681 coesite Inorganic materials 0.000 claims description 14
- 229910052906 cristobalite Inorganic materials 0.000 claims description 14
- 239000000377 silicon dioxide Substances 0.000 claims description 14
- 229910052682 stishovite Inorganic materials 0.000 claims description 14
- 229910052905 tridymite Inorganic materials 0.000 claims description 14
- 238000002955 isolation Methods 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 10
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 238000010586 diagram Methods 0.000 description 28
- 230000007547 defect Effects 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000000151 deposition Methods 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
一种TFET及其制备方法，涉及半导体技术领域，可大幅提高TFET制造工艺的可实现性。制备方法，包括：在形成有假栅(56)的衬底(10)上，使用填充物进行第一次填充，并进行平坦化的工艺，露出假栅(56)；利用光刻工艺，形成包括第一刻蚀窗口的第一光刻胶层(71)，第一刻蚀窗口位于第一区上方，通过各向同性刻蚀工艺去除位于第一区的填充物，对第一区进行离子注入工艺；使用填充物进行第二次填充，并进行平坦化的工艺，露出假栅(56)；利用光刻工艺，形成包括第二刻蚀窗口的第二光刻胶层(72)，第二刻蚀窗口位于第二区上方，通过各向同性刻蚀工艺去除位于第二区的填充物，对第二区进行离子注入工艺；其中，对第一区和第二区进行离子注入后分别形成源区(101)和漏区(102)。
Description
PCT国内申请，说明书已公开。
Claims (11)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2017/098327 WO2019036852A1 (zh) | 2017-08-21 | 2017-08-21 | 一种tfet及其制备方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109716490A true CN109716490A (zh) | 2019-05-03 |
| CN109716490B CN109716490B (zh) | 2021-05-11 |
Family
ID=65438191
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780003482.8A Active CN109716490B (zh) | 2017-08-21 | 2017-08-21 | 一种tfet及其制备方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109716490B (zh) |
| WO (1) | WO2019036852A1 (zh) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101667595A (zh) * | 2008-09-05 | 2010-03-10 | 台湾积体电路制造股份有限公司 | 半导体装置 |
| CN101699617A (zh) * | 2009-10-29 | 2010-04-28 | 复旦大学 | 自对准的隧穿场效应晶体管的制备方法 |
| CN102629627A (zh) * | 2012-04-16 | 2012-08-08 | 清华大学 | 异质栅隧穿晶体管及其形成方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102169900B (zh) * | 2011-03-01 | 2013-03-27 | 清华大学 | 基于异质栅极功函数的隧穿场效应晶体管及其形成方法 |
| CN104617137B (zh) * | 2015-01-19 | 2018-09-21 | 华为技术有限公司 | 一种场效应器件及其制备方法 |
| CN104779292B (zh) * | 2015-03-23 | 2018-01-09 | 华为技术有限公司 | 隧穿场效应晶体管及其制作方法 |
-
2017
- 2017-08-21 CN CN201780003482.8A patent/CN109716490B/zh active Active
- 2017-08-21 WO PCT/CN2017/098327 patent/WO2019036852A1/zh active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101667595A (zh) * | 2008-09-05 | 2010-03-10 | 台湾积体电路制造股份有限公司 | 半导体装置 |
| CN101699617A (zh) * | 2009-10-29 | 2010-04-28 | 复旦大学 | 自对准的隧穿场效应晶体管的制备方法 |
| CN102629627A (zh) * | 2012-04-16 | 2012-08-08 | 清华大学 | 异质栅隧穿晶体管及其形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109716490B (zh) | 2021-05-11 |
| WO2019036852A1 (zh) | 2019-02-28 |
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