CN109698260A - The luminescent device of two-dimensional material luminous intensity and peak position can be precisely controlled - Google Patents
The luminescent device of two-dimensional material luminous intensity and peak position can be precisely controlled Download PDFInfo
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- CN109698260A CN109698260A CN201910092280.6A CN201910092280A CN109698260A CN 109698260 A CN109698260 A CN 109698260A CN 201910092280 A CN201910092280 A CN 201910092280A CN 109698260 A CN109698260 A CN 109698260A
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- dimensional material
- luminous intensity
- peak position
- silicon thin
- precisely controlled
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- 239000000463 material Substances 0.000 title claims abstract description 42
- 239000010703 silicon Substances 0.000 claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000010409 thin film Substances 0.000 claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000010410 layer Substances 0.000 claims description 38
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 235000016768 molybdenum Nutrition 0.000 description 10
- 239000010408 film Substances 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 201000006549 dyspepsia Diseases 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000012782 phase change material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention relates to the luminescent devices that one kind can be precisely controlled two-dimensional material luminous intensity and peak position, including substrate, the silica dioxide medium layer of growth on substrate, and it is grown in silica dioxide medium layer and three pieces of mutually isolated silicon thin film regions, a metal electrode is wherein grown on two pieces respectively in three pieces of silicon thin films, another piece and one of grow are provided with one layer of two-dimensional material between the silicon thin film region for having metal electrode.Compared with prior art, the device manufacture method that the present invention is prepared is easy, easily operated, can accurately control two-dimensional material luminous intensity and peak position, can provide advantageous light source, be with a wide range of applications.
Description
Technical field
The invention belongs to luminescent device preparation technical fields, and two-dimensional material luminous intensity and peak can be precisely controlled by being related to one kind
The luminescent device of position.
Background technique
The discovery of graphene is so that two-dimensional material has caused a research boom in the world.Up to now,
There are tens kinds of two-dimensional materials to find and carry out Depth Study by people, the multifunctionality of two-dimensional material makes it in information, energy
The fields such as source, biology play very big effect.As Chinese patent 201510320484.2 discloses a kind of flexible two-dimentional material
Expect that luminescent device, the luminescent device successively include flexible substrate layer, the first metal layer, dielectric layer, two-dimensional semiconductor from top to bottom
Material layer, and it is arranged on dielectric layer and is located at the second metal layer at two-dimensional semiconductor material layer both ends, dielectric layer is as grid
Pole, second metal layer both ends are respectively as source electrode and drain electrode, to constitute MOS structure.Although the luminescent device of above-mentioned patent has
There is preferable photoelectric response speed, but the Modulatory character in luminous intensity and peak position is weaker.
Summary of the invention
It is an object of the present invention to overcome the above-mentioned drawbacks of the prior art and provide one kind can be precisely controlled two
Tie up luminescent device and its preparation of material emission intensity and peak position.
The purpose of the present invention can be achieved through the following technical solutions:
A kind of luminescent device being precisely controlled two-dimensional material luminous intensity and peak position, including substrate, growth are on substrate
Silica dioxide medium layer, and be grown in silica dioxide medium layer and three pieces of mutually isolated silicon thin films, three blocks of silicon is thin
A metal electrode is wherein grown on two pieces respectively in film, and another piece and growth have to be set between one piece of silicon thin film of metal electrode
It is equipped with one layer of two-dimensional material.
Further, the substrate is silicon substrate, with a thickness of 500 μm.
Further, the silica dioxide medium layer with a thickness of 10-200nm.
Further, the material of the metal electrode is gold, silver, chromium, aluminium or titanium, with a thickness of 10-200nm.
Further, the two-dimensional material is two telluride molybdenum of single layer, and thickness is no more than 2nm.
Further, the silicon thin film with a thickness of 10-100nm.
Further, it is 1-10 μm that growth, which has the spacing between the two panels silicon thin film of metal electrode,.
Two-dimensional material of the invention use two telluride molybdenums, when its by mechanical stress deformation occurs when, two telluride molybdenums can produce
Raw deformation forbidden bandwidth narrows, and changes so as to cause its luminous intensity and peak position.Want the machine for being precisely controlled two telluride molybdenums
Tool stress is extremely difficult, and the present invention changes the spacing of silicon thin film below two-dimensional material by the way of electrostatic attraction to realize precisely
Stress intensity suffered by two-dimensional material is controlled, and brings it about corresponding deformation and causes forbidden bandwidth corresponding change, so as to cause hair
Luminous intensity and peak position are also accurately adjusted therewith, according to the different available different high-quality light of luminous intensity and peak position
Source.
Compared with prior art, the invention has the following advantages that
(1) quantity that voltage influence charge inducing is used in the present invention, to change the electrostatic force between silicon thin film electrode
So that deformation occurs for two telluride molybdenums, it is high to respond fast accuracy.
(2) variation that a variety of two-dimensional materials can be carried out with luminous intensity and peak position in the present invention, is not limited to two telluride molybdenums,
Also other two-dimensional materials, available high-quality light source abundant can be used.
Detailed description of the invention
Fig. 1 is schematic view of the front view of the invention；
Fig. 2 is overlooking structure diagram of the invention；
Description of symbols in figure:
1- substrate, 2- silica dioxide medium layer, 31- silicon thin film A, 32- silicon thin film B, 33- silicon thin film C, 4- metal electrode A,
5- metal electrode B, 6- two-dimensional material.
Specific embodiment
Below in conjunction with the embodiment that particular instance illustrates, embodiment and various features and related details herein will be referred to
The non-limiting embodiment of middle detailed description is illustrated and be described below in attached drawing and is explained more fully.It omits well-known
The description of component and processing technique, in order to avoid the unnecessary embodiment indigestion made herein.It, can be with when making the structure
Use traditional handicraft well-known in semiconductor technology.Example used herein understands implementation herein just for the sake of help
The mode that example can be carried out, and further such that those skilled in the art can implement embodiment herein.Thus, it does not answer
Example herein is interpreted as to limit the range of embodiment herein.
It should be noted that the basic conception that only the invention is illustrated in a schematic way is illustrated provided in the present embodiment,
Then schema is only shown with related component in the present invention rather than component count, shape when according to actual implementation and size are drawn,
The kenel, quantity and ratio of each component can arbitrarily change when its actual implementation for one kind, and its assembly layout kenel may also
It is increasingly complex.
Embodiment 1
A kind of preparation method for the device being precisely controlled 6 luminous intensity of two-dimensional material and peak position, specifically:
Firstly, using silicon as substrate 1, and clean substrate 1.
Layer of silicon dioxide dielectric layer 2 is deposited on substrate 1, silica dioxide medium layer 2 is with a thickness of 70nm.
Later, in 2 surface silicon growth layer film of silica dioxide medium layer, silicon thin film is divided by the method for dry etching
For three parts disconnected from each other, respectively silicon thin film A 31, silicon thin film B 32 and silicon thin film C 33, then in 32 He of silicon thin film B
Method on silicon thin film C 33 by transfer covers one layer of two-dimensional material 6, and two-dimensional material 6 is two telluride molybdenum of single layer, with a thickness of
1nm can be used mechanical stripping method and prepare the layer.
Deposit the crome metal of one layer of 100nm thickness by electron beam evaporation on silicon thin film A 31 and silicon thin film B 32 respectively again
Then film is made metal by stripping technology and forms two electrode layers, respectively corresponds as metal electrode A 4 and metal electrode B 5.
A kind of embodiment 2: preparation method of accurate control two-dimensional material 6 luminous intensity and peak position
Firstly, substrate 1 is made using silicon, and clean substrate 1.
Layer of silicon dioxide dielectric layer 2 is deposited on substrate 1, to increase the adhesiveness between two-dimentional phase-change material and substrate 1.
Silica dioxide medium layer 2 is with a thickness of 80nm.
Later, in 2 surface silicon growth layer film of silica dioxide medium layer, by anhydrous hydrofluoric acid directly etching method by silicon
Film is divided into three parts disconnected from each other, respectively silicon thin film A 31, silicon thin film B 32 and silicon thin film C 33, then in silicon thin film
Method on B 32 and silicon thin film C 33 by transfer covers one layer of two-dimensional material 6, and two-dimensional material 6 is two telluride molybdenum of single layer, thick
Degree is 1nm, and mechanical stripping method can be used and prepare the layer.
Deposit the crome metal film of one layer of 50nm thickness by electron beam evaporation on silicon thin film A 31 and silicon thin film B 32 respectively again,
Then metal is made by stripping technology and forms two electrode layers, respectively corresponded as metal electrode A 4 and metal electrode B 5.
The structure of the luminescent device to complete in above-described embodiment can be found in shown in Fig. 1 and Fig. 2.
Embodiment 3
Compared with Example 1, the overwhelming majority is all identical, in addition in the present embodiment:
Substrate 1 with a thickness of 500 μm, silica dioxide medium layer 2 with a thickness of 10nm, metal electrode with a thickness of 10nm,
Two-dimensional material 6 is two telluride molybdenum of single layer, with a thickness of 1.5nm.
Embodiment 4
Compared with Example 1, the overwhelming majority is all identical, in addition in the present embodiment:
Substrate 1 with a thickness of 500 μm, silica dioxide medium layer 2 with a thickness of 200nm, metal electrode with a thickness of
200nm, two-dimensional material 6 is two telluride molybdenum of single layer, with a thickness of 1nm.
Embodiment 5-8
Compared with Example 1, the overwhelming majority is all identical, and in addition in the present embodiment: the material of metal electrode replaces with respectively
Gold, silver, aluminium, titanium.
The above description of the embodiments is intended to facilitate ordinary skill in the art to understand and use the invention.
Person skilled in the art obviously easily can make various modifications to these embodiments, and described herein general
Principle is applied in other embodiments without having to go through creative labor.Therefore, the present invention is not limited to the above embodiments, ability
Field technique personnel announcement according to the present invention, improvement and modification made without departing from the scope of the present invention all should be of the invention
Within protection scope.
Claims (7)
1. the luminescent device that one kind can be precisely controlled two-dimensional material luminous intensity and peak position, which is characterized in that including substrate, growth
Silica dioxide medium layer on substrate, and it is grown in silica dioxide medium layer and three pieces of mutually isolated silicon thin films, it is described
A metal electrode is wherein grown on two pieces respectively in three pieces of silicon thin films, another piece has metal electrode with one of growth
One layer of two-dimensional material is provided between silicon thin film.
2. one kind according to claim 1 can be precisely controlled the luminescent device of two-dimensional material luminous intensity and peak position, special
Sign is that the substrate is silicon substrate, with a thickness of 500 μm.
3. one kind according to claim 1 can be precisely controlled the luminescent device of two-dimensional material luminous intensity and peak position, special
Sign is, the silica dioxide medium layer with a thickness of 10-200nm.
4. one kind according to claim 1 can be precisely controlled the luminescent device of two-dimensional material luminous intensity and peak position, special
Sign is that the material of the metal electrode is gold, silver, chromium, aluminium or titanium, with a thickness of 10-200nm.
5. one kind according to claim 1 can be precisely controlled the luminescent device of two-dimensional material luminous intensity and peak position, special
Sign is that the two-dimensional material is two telluride molybdenum of single layer, and thickness is no more than 2nm.
6. one kind according to claim 1 can be precisely controlled the luminescent device of two-dimensional material luminous intensity and peak position, special
Sign is, the silicon thin film with a thickness of 10-100nm.
7. one kind according to claim 1 can be precisely controlled the luminescent device of two-dimensional material luminous intensity and peak position, special
Sign is that it is 1-10 μm that growth, which has the spacing between two pieces of silicon thin films of metal electrode,.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910092280.6A CN109698260B (en) | 2019-01-30 | 2019-01-30 | Light-emitting device capable of precisely controlling light-emitting intensity and peak position of two-dimensional material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910092280.6A CN109698260B (en) | 2019-01-30 | 2019-01-30 | Light-emitting device capable of precisely controlling light-emitting intensity and peak position of two-dimensional material |
Publications (2)
| Publication Number | Publication Date |
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| CN109698260A true CN109698260A (en) | 2019-04-30 |
| CN109698260B CN109698260B (en) | 2024-02-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201910092280.6A Active CN109698260B (en) | 2019-01-30 | 2019-01-30 | Light-emitting device capable of precisely controlling light-emitting intensity and peak position of two-dimensional material |
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| Country | Link |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009155112A (en) * | 2007-12-25 | 2009-07-16 | Panasonic Electric Works Co Ltd | Method for producing polycrystalline thin film, method for producing composite nanocrystal layer, field-emission electron source, and luminescent device |
| CN105185884A (en) * | 2015-06-11 | 2015-12-23 | 上海电力学院 | Flexible two-dimensional material light emitting device |
| CN209515724U (en) * | 2019-01-30 | 2019-10-18 | 上海电力学院 | A kind of luminescent device being precisely controlled two-dimensional material luminous intensity and peak position |
-
2019
- 2019-01-30 CN CN201910092280.6A patent/CN109698260B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009155112A (en) * | 2007-12-25 | 2009-07-16 | Panasonic Electric Works Co Ltd | Method for producing polycrystalline thin film, method for producing composite nanocrystal layer, field-emission electron source, and luminescent device |
| CN105185884A (en) * | 2015-06-11 | 2015-12-23 | 上海电力学院 | Flexible two-dimensional material light emitting device |
| CN209515724U (en) * | 2019-01-30 | 2019-10-18 | 上海电力学院 | A kind of luminescent device being precisely controlled two-dimensional material luminous intensity and peak position |
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| Publication number | Publication date |
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| CN109698260B (en) | 2024-02-27 |
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