CN107968105A - Dot structure, display panel and display device - Google Patents

Dot structure, display panel and display device Download PDF

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Publication number
CN107968105A
CN107968105A CN201710299261.1A CN201710299261A CN107968105A CN 107968105 A CN107968105 A CN 107968105A CN 201710299261 A CN201710299261 A CN 201710299261A CN 107968105 A CN107968105 A CN 107968105A
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China
Prior art keywords
pixel
layer
flatness layer
dot
electrode
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CN201710299261.1A
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Chinese (zh)
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CN107968105B (en
Inventor
陈亚文
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广东聚华印刷显示技术有限公司
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Publication of CN107968105A publication Critical patent/CN107968105A/en
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/28Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
    • H01L27/32Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
    • H01L27/3241Matrix-type displays
    • H01L27/3244Active matrix displays
    • H01L27/3248Connection of the pixel electrode to the TFT
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/28Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
    • H01L27/32Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
    • H01L27/3241Matrix-type displays
    • H01L27/3244Active matrix displays
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/28Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
    • H01L27/32Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
    • H01L27/3241Matrix-type displays
    • H01L27/3244Active matrix displays
    • H01L27/3246Pixel defining structures, e.g. banks
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2227/00Indexing scheme for devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate covered by group H01L27/00
    • H01L2227/32Devices including an organic light emitting device [OLED], e.g. OLED display
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2227/00Indexing scheme for devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate covered by group H01L27/00
    • H01L2227/32Devices including an organic light emitting device [OLED], e.g. OLED display
    • H01L2227/323Multistep processes for AMOLED

Abstract

The present invention a kind of dot structure, display panel and display device, the dot structure include substrate, and flatness layer, is formed on the substrate, and the flatness layer has groove corresponding with pixel electrode, and the pixel electrode is located in the groove;Pixel defining layer, is formed on the flatness layer, and the pixel defining layer is cheated with pixel, and the pixel electrode of same color is located in same pixel hole.Drive circuit flatness layer is made by using hydrophilic material, and pixel electrode is embedded in hydrophily flatness layer, Embedded pixel electrode can effectively prevent pixel electrode edge protuberance from causing short circuit and point discharge phenomenon, then pixel defining layer is made with hydrophobic material, form ink crystallizing field, so as to save the preparation of first layer hydrophily pixel defining layer, the manufacture craft for making dot structure is simplified, and then save cost of manufacture.

Description

Dot structure, display panel and display device

Technical field

The present invention relates to light emitting device technologies field, more particularly to a kind of dot structure, display panel and display device.

Background technology

Using solution processing and fabricating OLED and QLED display, due to its inexpensive, high production capacity, large scale is easily achieved The advantages that, it is the important directions that following Display Technique develops.Wherein, printing technology be considered as realize OLED and QLED it is low into Sheet and the most effective approach of the full-color display of large area.

In typography, due to being influenced by equipment precision and drop size, arranged for traditional RGBStripe Dot structure high-resolution display panel relatively difficult to achieve preparation, and high-resolution is the development of following high-quality display panel Main flow direction, therefore designed in current typography often through other dot structures to realize high-resolution, such as Fig. 1 institutes Show, by two layers PDL layers of (pixel defining layer) structure design of pixel, first layer is PDL layers of hydrophily, covering pixel electrode side Edge area, prevents that short circuit and point discharge, the second layer from being PDL layers of hydrophobicity, the sub-pixel collection of adjacent same color is surrounded Opening in, formed a larger ink crystallizing field, and then improve typography make display panel resolution ratio.But by In need to be formed two layers PDL layers, production process is complex, is unfavorable for the reduction of cost of manufacture.

Therefore, the prior art has much room for improvement and develops.

The content of the invention

Based on this, the object of the present invention is to provide a kind of new dot structure.

Specific technical solution is as follows:

A kind of dot structure, including

Substrate;

Flatness layer, is formed on the substrate, and the flatness layer has groove corresponding with pixel electrode, the pixel electricity Pole is located in the groove;

Pixel defining layer, is formed on the flatness layer, the pixel defining layer with pixel cheat, same color it is described Pixel electrode is located in same pixel hole;The medial surface in the pixel hole and the boundary line of the flatness layer and pixel electricity Buffering area is equipped between pole.

In wherein some embodiments, the distance between the boundary line and the pixel electrode are 2-10 μm.

In wherein some embodiments, the thickness of the flatness layer is more than or equal to the thickness of the pixel electrode.

In wherein some embodiments, the thickness of the pixel defining layer is 0.8-2 μm.

In wherein some embodiments, the flatness layer is prepared by hydrophilic material, and the hydrophilic material is selected from PVA, hydrophily PI or silicon nitride.

In wherein some embodiments, the pixel defining layer is prepared by hydrophobic material, the hydrophobic material Selected from organosilicon material or hydrophobicity PI.

It is a further object of the present invention to provide a kind of display panel.

A kind of display panel, including above-mentioned dot structure.

It is a further object of the present invention to provide the preparation method of above-mentioned display panel.

The preparation method of above-mentioned display panel, includes the following steps:

S1, obtain substrate, and in depositing one layer of flatness layer on the substrate, the material of the flatness layer is hydrophilic material, In on the flatness layer by etching form groove;

S2, in pixel deposition electrode in the groove;

S3, in pixel deposition on the flatness layer define layer, and forms pixel by patterning process and cheat, same color The pixel electrode is located in same pixel hole;Boundary line and the picture of the medial surface in the pixel hole with the flatness layer Buffering area is equipped between plain electrode;

S4, use typography depositing light emitting layer in pixel hole;

S5, make top electrode and encapsulate, up to the display panel.

It is a further object of the present invention to provide a kind of display device.

A kind of display device, including above-mentioned display panel.

In wherein some embodiments, which is OLED or QLED.

Flatness layer is covered in above-mentioned dot structure on substrate, pixel electrode is embedded in flatness layer, pixel electrode upper surface Not higher than flat layer surface;Flatness layer is prepared using hydrophilic material, ensures that ink has good spreadability on it;Pixel Define layer to prepare using hydrophobic material, thickness is 0.8 μm -2 μm, prevents ink from overflowing pixel hole, adjacent same color The pixel electrode of pixel is located in the open region of same PDL, so as to expand the deposition region of ink at double, and then realizes high-resolution The making of rate typographical display panel, the connected regions of the pixel electrode of adjacent same color sub-pixel are hydrophilic flat Layer, so that when ink deposits, forms the good film forming sprawled, ensure later stage ink dried in the open region of whole PDL Uniformity.

Drive circuit flatness layer (being integrated on substrate) is made by using hydrophilic material, and pixel electrode is embedded in parent In water-based flatness layer, Embedded pixel electrode can effectively prevent pixel electrode edge protuberance from causing short circuit and point discharge Phenomenon, then makes pixel defining layer with hydrophobic material, ink crystallizing field is formed, so as to save first layer hydrophily pixel circle The preparation of given layer, simplifies the manufacture craft for making dot structure, and then saves cost of manufacture.

Pixel is cheated is provided with buffering area between flatness layer intersection and pixel electrode, can cause side during ink dried Edge material stacking is located in this region, so as to effectively improve uniformity of film of the pixel in effective luminous zone, and then improves whole The thickness evenness of a device, realizes and improves the uniformity of luminance that typography prepares display panel.

Brief description of the drawings

Fig. 1 is the structure diagram of pixel defining layer in the prior art;

Fig. 2 is the device architecture schematic diagram that embodiment display panel preparation process S1 is obtained;

Fig. 3 is the device architecture schematic diagram that embodiment display panel preparation process S2 is obtained;

Fig. 4 is the device architecture schematic diagram that embodiment display panel preparation process S3 is obtained;

Fig. 5 is the structure diagram for the display panel that embodiment is prepared.

Description of reference numerals:

101st, substrate;102nd, flatness layer;103rd, pixel electrode;104th, pixel defining layer;105th, buffering area;106th, shine Layer;107th, top electrode.

Embodiment

For the ease of understanding the present invention, the present invention will be described more fully below.But the present invention can be with perhaps More different form is realized, however it is not limited to embodiment described herein.On the contrary, the purpose for providing these embodiments is to make Understanding more thorough and comprehensive to the disclosure.

Unless otherwise defined, all of technologies and scientific terms used here by the article is with belonging to technical field of the invention The normally understood implication of technical staff is identical.Term used in the description of the invention herein is intended merely to description tool The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein "and/or" includes one or more phases The arbitrary and all combination of the Listed Items of pass.

A kind of dot structure of the present embodiment (as shown in Figure 4), including

Substrate 101, has TFT drive arrays;

Flatness layer 102, is formed at covering TFT drive arrays on the substrate, and the flatness layer has and pixel electrode pair The groove answered, the pixel electrode 103 are located in the groove;

It should be understood that the pixel electrode can be that transparent pixel electrode can also be reflection according to emitting device structure Type pixel electrode;

The flatness layer 102 is prepared using hydrophilic material, it is possible to understand that ground, the hydrophilic material be selected from PVA, Hydrophily PI or silicon nitride.

The thickness of the flatness layer 102 is more than or equal to the thickness of the pixel electrode, and the purpose is to prevent pixel electrode side Edge, which forms protrusion, causes point discharge;

Pixel defining layer 104, is formed on the flatness layer, and the pixel defining layer is cheated with pixel, same color The pixel electrode is located in same pixel hole, and the thickness of the pixel defining layer 104 is 0.8-2 μm;

The pixel defining layer 104 is prepared by hydrophobic material, it is possible to understand that ground, the hydrophobic material, which is selected from, to be had Machine silicon materials or hydrophobicity PI.

Buffering area is equipped between the medial surface and the boundary line of the flatness layer and the pixel electrode in the pixel hole 105。

Flatness layer is covered in above-mentioned dot structure on substrate, flatness layer is prepared using hydrophilic material, ensures ink at it It is upper that there is good spreadability;Pixel electrode is embedded in flatness layer, and pixel electrode upper surface is not higher than flat layer surface;Pixel Define layer to prepare using hydrophobic material, thickness is 0.8 μm -2 μm, can prevent ink from overflowing pixel hole, adjacent identical face The pixel electrode of sub-pixels is located in same pixel hole, so as to expand the deposition region of ink at double, and then realizes high-resolution The making of rate typographical display panel, the connected regions of the pixel electrode of adjacent same color sub-pixel are hydrophilic flat Layer, so that when ink deposits, forms the good film forming sprawled, ensure later stage ink dried in the open region of whole PDL Uniformity.

Pixel is cheated is provided with buffering area between flatness layer intersection and pixel electrode, can cause side during ink dried Edge material stacking is located in this region, so as to effectively improve uniformity of film of the pixel in effective luminous zone, and then improves whole The thickness evenness of a device, realizes and improves the uniformity of luminance that typography prepares display panel.

A kind of preparation method of display panel of the present embodiment, includes the following steps:

S1, obtain substrate 101 (substrate with TFT drive arrays), in one layer of flatness layer of deposition on the substrate 101 102 (covering the TFT drive arrays), the material of the flatness layer 102 is hydrophilic material, in logical on the flatness layer 102 Overetch forms groove, as shown in Figure 2;

S2, in pixel deposition electrode 103 in the groove, as shown in Figure 3;

S3, define layer 104 with pixel deposition on the flatness layer 102, and forms pixel by etching and cheat, same color The pixel electrode is located in same pixel hole, the medial surface in the pixel hole and boundary line and the picture of the flatness layer Buffering area 105 is equipped between plain electrode;As shown in Figure 4;

S4, use typography depositing light emitting layer 106 in pixel hole;

S5, make top electrode 107 and encapsulate, to obtain the final product the display panel, as shown in Figure 5.

A kind of display device (OLED or QLED), including above-mentioned display panel.

Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited In contradiction, the scope that this specification is recorded all is considered to be.

Embodiment described above only expresses the several embodiments of the present invention, its description is more specific and detailed, but simultaneously Cannot therefore it be construed as limiting the scope of the patent.It should be pointed out that come for those of ordinary skill in the art Say, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention Scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.

Claims (10)

  1. A kind of 1. dot structure, it is characterised in that including
    Substrate;
    Flatness layer, is formed on the substrate, and the flatness layer has groove corresponding with pixel electrode, the pixel electrode position In in the groove;
    Pixel defining layer, is formed on the flatness layer, and the pixel defining layer is cheated with pixel, the pixel of same color Electrode is located in same pixel hole;The medial surface in pixel hole and the boundary line and the pixel electrode of the flatness layer it Between be equipped with buffering area.
  2. 2. dot structure according to claim 1, it is characterised in that between the boundary line and the pixel electrode away from From for 2-10 μm.
  3. 3. dot structure according to claim 1, it is characterised in that the thickness of the flatness layer is more than or equal to the pixel The thickness of electrode.
  4. 4. dot structure according to claim 1, it is characterised in that the thickness of the pixel defining layer is 0.8-2 μm.
  5. 5. according to claim 1-4 any one of them dot structures, it is characterised in that the flatness layer is by hydrophilic material system Standby to form, the hydrophilic material is selected from PVA, hydrophily PI or silicon nitride.
  6. 6. according to claim 1-4 any one of them dot structures, it is characterised in that the pixel defining layer is by hydrophobicity material Material is prepared, and the hydrophobic material is selected from organosilicon material or hydrophobicity PI.
  7. 7. a kind of display panel, it is characterised in that including claim 1-6 any one of them dot structures.
  8. 8. the preparation method of the display panel described in claim 7, it is characterised in that include the following steps:
    S1, obtain substrate, and in depositing one layer of flatness layer on the substrate, the material of the flatness layer is hydrophilic material, in institute State and groove is formed by etching on flatness layer;
    S2, in pixel deposition electrode in the groove;
    S3, in pixel deposition on the flatness layer define layer, and forms pixel by patterning process and cheat, same color it is described Pixel electrode is located in same pixel hole;The medial surface in the pixel hole and the boundary line of the flatness layer and pixel electricity Buffering area is equipped between pole;
    S4, use typography depositing light emitting layer in pixel hole;
    S5, make top electrode and encapsulate, up to the display panel.
  9. 9. a kind of display device, it is characterised in that including the display panel described in claim 7.
  10. 10. display device according to claim 9, it is characterised in that the display device is OLED or QLED.
CN201710299261.1A 2017-04-28 2017-04-28 Pixel structure, display panel and display device CN107968105B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109581721A (en) * 2019-02-01 2019-04-05 合肥鑫晟光电科技有限公司 A kind of preparation method of substrate for display, substrate for display and display device
CN110112174A (en) * 2018-05-04 2019-08-09 广东聚华印刷显示技术有限公司 Dot structure and preparation method thereof, display panel

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080158683A1 (en) * 2006-12-27 2008-07-03 Young Je Yun Image Sensor and Manufacturing Method Thereof
CN103762224A (en) * 2014-01-29 2014-04-30 京东方科技集团股份有限公司 Organic electroluminescence display panel
CN105261635A (en) * 2015-10-29 2016-01-20 Tcl集团股份有限公司 LED pixel arrangement structure, printing type display device and preparation method of display device
CN105470282A (en) * 2015-11-20 2016-04-06 Tcl集团股份有限公司 Pixel-bank-free TFT-OLED and preparation method thereof
CN106531766A (en) * 2016-11-03 2017-03-22 Tcl集团股份有限公司 Pixel bank structure and preparation method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080158683A1 (en) * 2006-12-27 2008-07-03 Young Je Yun Image Sensor and Manufacturing Method Thereof
CN103762224A (en) * 2014-01-29 2014-04-30 京东方科技集团股份有限公司 Organic electroluminescence display panel
CN105261635A (en) * 2015-10-29 2016-01-20 Tcl集团股份有限公司 LED pixel arrangement structure, printing type display device and preparation method of display device
CN105470282A (en) * 2015-11-20 2016-04-06 Tcl集团股份有限公司 Pixel-bank-free TFT-OLED and preparation method thereof
CN106531766A (en) * 2016-11-03 2017-03-22 Tcl集团股份有限公司 Pixel bank structure and preparation method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110112174A (en) * 2018-05-04 2019-08-09 广东聚华印刷显示技术有限公司 Dot structure and preparation method thereof, display panel
CN109581721A (en) * 2019-02-01 2019-04-05 合肥鑫晟光电科技有限公司 A kind of preparation method of substrate for display, substrate for display and display device
WO2020155495A1 (en) * 2019-02-01 2020-08-06 Boe Technology Group Co., Ltd. Method for manufacturing display substrate, display substrate, and display apparatus

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