CN109698260B - Light-emitting device capable of precisely controlling light-emitting intensity and peak position of two-dimensional material - Google Patents
Light-emitting device capable of precisely controlling light-emitting intensity and peak position of two-dimensional material Download PDFInfo
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- CN109698260B CN109698260B CN201910092280.6A CN201910092280A CN109698260B CN 109698260 B CN109698260 B CN 109698260B CN 201910092280 A CN201910092280 A CN 201910092280A CN 109698260 B CN109698260 B CN 109698260B
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- 239000000463 material Substances 0.000 title claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 44
- 239000010703 silicon Substances 0.000 claims abstract description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 17
- 239000010410 layer Substances 0.000 claims description 37
- HITXEXPSQXNMAN-UHFFFAOYSA-N bis(tellanylidene)molybdenum Chemical compound [Te]=[Mo]=[Te] HITXEXPSQXNMAN-UHFFFAOYSA-N 0.000 claims description 9
- 239000002356 single layer Substances 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 11
- 230000002349 favourable effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 29
- 238000002360 preparation method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 239000012782 phase change material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention relates to a light-emitting device capable of precisely controlling the light-emitting intensity and peak position of a two-dimensional material, which comprises a substrate, a silicon dioxide dielectric layer growing on the substrate and three silicon film areas which are grown on the silicon dioxide dielectric layer and are mutually isolated, wherein one metal electrode grows on two of the three silicon films respectively, and a layer of two-dimensional material is arranged between the other metal electrode and the silicon film area in which the metal electrode grows. Compared with the prior art, the device prepared by the method is simple and convenient to manufacture and easy to operate, can accurately control the luminous intensity and peak position of the two-dimensional material, can provide a favorable light source, and has wide application prospect.
Description
Technical Field
The invention belongs to the technical field of preparation of light-emitting devices, and relates to a light-emitting device capable of accurately controlling the light-emitting intensity and peak position of a two-dimensional material.
Background
The discovery of graphene has led to a search for two-dimensional materials worldwide. To date, several tens of two-dimensional materials have been discovered and studied deeply, and the versatility of the two-dimensional materials makes them very useful in the fields of information, energy, biology, etc. As disclosed in chinese patent 201510320484.2, the light emitting device comprises, from bottom to top, a flexible substrate layer, a first metal layer, a dielectric layer, a two-dimensional semiconductor material layer, and a second metal layer disposed on the dielectric layer and located at two ends of the two-dimensional semiconductor material layer, wherein the dielectric layer is used as a gate, and two ends of the second metal layer are used as a source and a drain, respectively, so as to form a MOS structure. The light emitting device of the above patent has a relatively low light emission intensity and a relatively low peak position controllability, although having a relatively high photoelectric response speed.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a light-emitting device capable of precisely controlling the light-emitting intensity and peak position of a two-dimensional material and a preparation method thereof.
The aim of the invention can be achieved by the following technical scheme:
the light-emitting device comprises a substrate, a silicon dioxide dielectric layer growing on the substrate, and three silicon films growing on the silicon dioxide dielectric layer and isolated from each other, wherein one metal electrode grows on two of the three silicon films, and a layer of two-dimensional material is arranged between the other metal electrode and one silicon film growing with the metal electrode.
Further, the substrate is a silicon substrate, and the thickness of the substrate is 500 μm.
Further, the thickness of the silicon dioxide dielectric layer is 10-200nm.
Further, the metal electrode is made of gold, silver, chromium, aluminum or titanium, and the thickness of the metal electrode is 10-200nm.
Further, the two-dimensional material is single-layer molybdenum ditelluride, and the thickness is not more than 2nm.
Further, the thickness of the silicon film is 10-100nm.
Further, the interval between two silicon thin films grown with metal electrodes is 1-10 μm.
When the two-dimensional material is deformed by mechanical stress, the molybdenum ditelluride can generate deformation with narrow forbidden band width, so that the luminous intensity and peak position of the material are changed. The invention adopts an electrostatic attraction mode to change the interval of the silicon film below the two-dimensional material to realize the accurate control of the stress magnitude of the two-dimensional material, and causes the corresponding deformation to cause the corresponding change of the forbidden band width, thereby causing the accurate adjustment of the luminous intensity and the peak position, and different high-quality light sources can be obtained according to different luminous intensities and peak positions.
Compared with the prior art, the invention has the following advantages:
(1) The invention adopts voltage to influence the quantity of induced charges, thereby changing the electrostatic force between the silicon film electrodes to deform molybdenum ditelluride, and having quick response and high accuracy.
(2) The invention can change the luminous intensity and peak position of various two-dimensional materials, is not limited to molybdenum ditelluride, can also use other two-dimensional materials, and can obtain abundant high-quality light sources.
Drawings
FIG. 1 is a schematic diagram of a front view of the present invention;
FIG. 2 is a schematic top view of the present invention;
the figure indicates:
1-substrate, 2-silicon dioxide dielectric layer, 31-silicon film A, 32-silicon film B, 33-silicon film C, 4-metal electrode A, 5-metal electrode B and 6-two-dimensional material.
Detailed Description
The embodiments and various features and details relating thereto are explained more fully below in connection with the implementation illustrated by specific examples, with reference to the non-limiting examples illustrated in the accompanying drawings and detailed in the following description. Descriptions of well-known components and processing techniques are omitted so as to not unnecessarily obscure the embodiments herein. Conventional processes well known in semiconductor processing may be used in fabricating the structure. The examples used herein are intended merely to facilitate an understanding of ways in which the embodiments herein may be practiced and to further enable those of skill in the art to practice the embodiments herein. Thus, the examples herein should not be construed as limiting the scope of the embodiments herein.
It should be noted that the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and the drawings only show the components related to the present invention, not the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
Example 1
The preparation method of the device capable of precisely controlling the luminous intensity and peak position of the two-dimensional material 6 comprises the following steps:
first, silicon is used as the substrate 1, and the substrate 1 is cleaned.
A silicon dioxide dielectric layer 2 is deposited on the substrate 1, and the thickness of the silicon dioxide dielectric layer 2 is 70nm.
Then, a layer of silicon film grows on the surface of the silicon dioxide dielectric layer 2, the silicon film is divided into three parts which are separated from each other by a dry etching method, namely a silicon film A31, a silicon film B32 and a silicon film C33, then a layer of two-dimensional material 6 is covered on the silicon film B32 and the silicon film C33 by a transfer method, the two-dimensional material 6 is single-layer molybdenum ditelluride, the thickness is 1nm, and the layer can be prepared by adopting a mechanical stripping method.
And then a layer of metal chromium film with the thickness of 100nm is respectively deposited on the silicon film A31 and the silicon film B32 by electron beam evaporation, and then metal is manufactured into two electrode layers which are respectively corresponding to the metal electrode A4 and the metal electrode B5 by a stripping process.
Example 2: preparation method for precisely controlling luminous intensity and peak position of two-dimensional material 6
First, the substrate 1 is made of silicon, and the substrate 1 is cleaned.
A silicon dioxide dielectric layer 2 is deposited on the substrate 1 to increase the adhesion between the two-dimensional phase change material and the substrate 1. The thickness of the silicon dioxide dielectric layer 2 is 80nm.
Then, a layer of silicon film grows on the surface of the silicon dioxide dielectric layer 2, the silicon film is divided into three parts which are separated from each other by a dry hydrofluoric acid direct corrosion method, namely a silicon film A31, a silicon film B32 and a silicon film C33, then a layer of two-dimensional material 6 is covered on the silicon film B32 and the silicon film C33 by a transfer method, the two-dimensional material 6 is single-layer molybdenum ditelluride, the thickness is 1nm, and the layer can be prepared by adopting a mechanical stripping method.
And then a layer of metal chromium film with the thickness of 50nm is respectively deposited on the silicon film A31 and the silicon film B32 by electron beam evaporation, and then metal is manufactured into two electrode layers which are respectively corresponding to the metal electrode A4 and the metal electrode B5 by a stripping process.
The structure of the light emitting device fabricated in the above embodiment can be seen in fig. 1 and 2.
Example 3
Compared to example 1, the vast majority are identical, except in this example:
the thickness of the substrate 1 is 500 mu m, the thickness of the silicon dioxide dielectric layer 2 is 10nm, the thickness of the metal electrode is 10nm, the two-dimensional material 6 is single-layer molybdenum ditelluride, and the thickness is 1.5nm.
Example 4
Compared to example 1, the vast majority are identical, except in this example:
the thickness of the substrate 1 is 500 mu m, the thickness of the silicon dioxide dielectric layer 2 is 200nm, the thickness of the metal electrode is 200nm, the two-dimensional material 6 is single-layer molybdenum ditelluride, and the thickness is 1nm.
Examples 5 to 8
Compared to example 1, the vast majority are identical, except in this example: the material of the metal electrode is replaced by gold, silver, aluminum and titanium respectively.
The previous description of the embodiments is provided to facilitate a person of ordinary skill in the art in order to make and use the present invention. It will be apparent to those skilled in the art that various modifications can be readily made to these embodiments and the generic principles described herein may be applied to other embodiments without the use of the inventive faculty. Therefore, the present invention is not limited to the above-described embodiments, and those skilled in the art, based on the present disclosure, should make improvements and modifications without departing from the scope of the present invention.
Claims (1)
1. The light-emitting device capable of precisely controlling the light-emitting intensity and peak position of a two-dimensional material is characterized by comprising a substrate, a silicon dioxide dielectric layer and three silicon films, wherein the silicon dioxide dielectric layer grows on the substrate, the three silicon films grow on the silicon dioxide dielectric layer and are mutually isolated, one metal electrode grows on two of the three silicon films respectively, and a layer of two-dimensional material is arranged between the other silicon film and the silicon film with the metal electrode growing on the other silicon film;
the substrate is a silicon substrate, and the thickness of the substrate is 500 mu m;
the thickness of the silicon dioxide dielectric layer is 10-200nm;
the metal electrode is made of gold, silver, chromium, aluminum or titanium, and the thickness of the metal electrode is 10-200nm;
the two-dimensional material is single-layer molybdenum ditelluride, and the thickness is not more than 2nm;
the thickness of the silicon film is 10-100 nm;
the distance between two silicon films with the metal electrodes is 1-10 mu m;
the light-emitting device adopts an electrostatic attraction mode to change the interval of the silicon film below the two-dimensional material to realize the accurate control of the stress magnitude born by the two-dimensional material, and enables the stress magnitude to be correspondingly deformed to cause the corresponding change of the forbidden band width, so that the light-emitting intensity and the peak position are also accurately adjusted, and different high-quality light sources can be obtained according to different light-emitting intensities and peak positions.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910092280.6A CN109698260B (en) | 2019-01-30 | 2019-01-30 | Light-emitting device capable of precisely controlling light-emitting intensity and peak position of two-dimensional material |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910092280.6A CN109698260B (en) | 2019-01-30 | 2019-01-30 | Light-emitting device capable of precisely controlling light-emitting intensity and peak position of two-dimensional material |
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| CN109698260B true CN109698260B (en) | 2024-02-27 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009155112A (en) * | 2007-12-25 | 2009-07-16 | Panasonic Electric Works Co Ltd | Method for producing polycrystalline thin film, method for producing composite nanocrystal layer, field-emission electron source, and luminescent device |
| CN105185884A (en) * | 2015-06-11 | 2015-12-23 | 上海电力学院 | Flexible two-dimensional material light emitting device |
| CN209515724U (en) * | 2019-01-30 | 2019-10-18 | 上海电力学院 | A kind of luminescent device being precisely controlled two-dimensional material luminous intensity and peak position |
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2019
- 2019-01-30 CN CN201910092280.6A patent/CN109698260B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009155112A (en) * | 2007-12-25 | 2009-07-16 | Panasonic Electric Works Co Ltd | Method for producing polycrystalline thin film, method for producing composite nanocrystal layer, field-emission electron source, and luminescent device |
| CN105185884A (en) * | 2015-06-11 | 2015-12-23 | 上海电力学院 | Flexible two-dimensional material light emitting device |
| CN209515724U (en) * | 2019-01-30 | 2019-10-18 | 上海电力学院 | A kind of luminescent device being precisely controlled two-dimensional material luminous intensity and peak position |
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| CN109698260A (en) | 2019-04-30 |
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