CN209515724U - A kind of luminescent device being precisely controlled two-dimensional material luminous intensity and peak position - Google Patents
A kind of luminescent device being precisely controlled two-dimensional material luminous intensity and peak position Download PDFInfo
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- CN209515724U CN209515724U CN201920164512.XU CN201920164512U CN209515724U CN 209515724 U CN209515724 U CN 209515724U CN 201920164512 U CN201920164512 U CN 201920164512U CN 209515724 U CN209515724 U CN 209515724U
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Abstract
The utility model relates to the luminescent devices that one kind can be precisely controlled two-dimensional material luminous intensity and peak position, including substrate, the silica dioxide medium layer of growth on substrate, and it is grown in silica dioxide medium layer and three pieces of mutually isolated silicon thin film regions, a metal electrode is wherein grown on two pieces respectively in three pieces of silicon thin films, another piece and one of grow are provided with one layer of two-dimensional material between the silicon thin film region for having metal electrode.Compared with prior art, the device manufacture method that the utility model is prepared is easy, easily operated, can accurately control two-dimensional material luminous intensity and peak position, can provide advantageous light source, be with a wide range of applications.
Description
Technical field
The utility model belongs to luminescent device preparation technical field, and two-dimensional material luminous intensity can be precisely controlled by being related to one kind
With the luminescent device of peak position.
Background technique
The discovery of graphene is so that two-dimensional material has caused a research boom in the world.Up to now,
There are tens kinds of two-dimensional materials to find and carry out Depth Study by people, the multifunctionality of two-dimensional material makes it in information, energy
The fields such as source, biology play very big effect.As Chinese patent 201510320484.2 discloses a kind of flexible two-dimentional material
Expect that luminescent device, the luminescent device successively include flexible substrate layer, the first metal layer, dielectric layer, two-dimensional semiconductor from top to bottom
Material layer, and it is arranged on dielectric layer and is located at the second metal layer at two-dimensional semiconductor material layer both ends, dielectric layer is as grid
Pole, second metal layer both ends are respectively as source electrode and drain electrode, to constitute MOS structure.Although the luminescent device of above-mentioned patent has
There is preferable photoelectric response speed, but the Modulatory character in luminous intensity and peak position is weaker.
Utility model content
The purpose of this utility model is exactly to overcome the problems of the above-mentioned prior art and providing one kind can precisely control
Luminescent device and its preparation of two-dimensional material luminous intensity and peak position processed.
The purpose of this utility model can be achieved through the following technical solutions:
A kind of luminescent device being precisely controlled two-dimensional material luminous intensity and peak position, including substrate, growth are on substrate
Silica dioxide medium layer, and be grown in silica dioxide medium layer and three pieces of mutually isolated silicon thin films, three blocks of silicon is thin
A metal electrode is wherein grown on two pieces respectively in film, and another piece and growth have to be set between one piece of silicon thin film of metal electrode
It is equipped with one layer of two-dimensional material.
Further, the substrate is silicon substrate, with a thickness of 500 μm.
Further, the silica dioxide medium layer with a thickness of 10-200nm.
Further, the material of the metal electrode is gold, silver, chromium, aluminium or titanium, with a thickness of 10-200nm.
Further, the two-dimensional material is two telluride molybdenum of single layer, and thickness is no more than 2nm.
Further, the silicon thin film with a thickness of 10-100nm.
Further, it is 1-10 μm that growth, which has the spacing between the two panels silicon thin film of metal electrode,.
The two-dimensional material of the utility model use two telluride molybdenums, when its by mechanical stress deformation occurs when, two telluride molybdenums
Deformation forbidden bandwidth can be generated to narrow, changed so as to cause its luminous intensity and peak position.Want to be precisely controlled two telluride molybdenums
Mechanical stress it is extremely difficult, the utility model changed by the way of electrostatic attraction the spacing of silicon thin film below two-dimensional material come
Realization is precisely controlled stress intensity suffered by two-dimensional material, and brings it about corresponding deformation and cause forbidden bandwidth corresponding change, from
And luminous intensity and peak position is caused also accurately to be adjusted therewith, according to the different available differences of luminous intensity and peak position
High-quality light source.
Compared with prior art, the utility model has the advantage that
(1) quantity that voltage influence charge inducing is used in the utility model, to change quiet between silicon thin film electrode
Electric power makes two telluride molybdenums, and deformation occurs, and it is high to respond fast accuracy.
(2) variation that a variety of two-dimensional materials can be carried out with luminous intensity and peak position in the utility model, is not limited to two telluriums
Change molybdenum, other two-dimensional materials, available high-quality light source abundant also can be used.
Detailed description of the invention
Fig. 1 is the schematic view of the front view of the utility model；
Fig. 2 is the overlooking structure diagram of the utility model；
Description of symbols in figure:
1- substrate, 2- silica dioxide medium layer, 31- silicon thin film A, 32- silicon thin film B, 33- silicon thin film C, 4- metal electrode A,
5- metal electrode B, 6- two-dimensional material.
Specific embodiment
Below in conjunction with the embodiment that particular instance illustrates, embodiment and various features and related details herein will be referred to
The non-limiting embodiment of middle detailed description is illustrated and be described below in attached drawing and is explained more fully.It omits well-known
The description of component and processing technique, in order to avoid the unnecessary embodiment indigestion made herein.It, can be with when making the structure
Use traditional handicraft well-known in semiconductor technology.Example used herein understands implementation herein just for the sake of help
The mode that example can be carried out, and further such that those skilled in the art can implement embodiment herein.Thus, it does not answer
Example herein is interpreted as to limit the range of embodiment herein.
It should be noted that diagram provided in the present embodiment only illustrates the basic structure of the utility model in a schematic way
Think, then schema only show with related component in the utility model rather than component count, shape and ruler when according to actual implementation
Very little drafting, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its assembly layout kenel
It may also be increasingly complex.
Embodiment 1
A kind of preparation method for the device being precisely controlled 6 luminous intensity of two-dimensional material and peak position, specifically:
Firstly, using silicon as substrate 1, and clean substrate 1.
Layer of silicon dioxide dielectric layer 2 is deposited on substrate 1, silica dioxide medium layer 2 is with a thickness of 70nm.
Later, in 2 surface silicon growth layer film of silica dioxide medium layer, silicon thin film is divided by the method for dry etching
For three parts disconnected from each other, respectively silicon thin film A 31, silicon thin film B 32 and silicon thin film C 33, then in 32 He of silicon thin film B
Method on silicon thin film C 33 by transfer covers one layer of two-dimensional material 6, and two-dimensional material 6 is two telluride molybdenum of single layer, with a thickness of
1nm can be used mechanical stripping method and prepare the layer.
Deposit the crome metal of one layer of 100nm thickness by electron beam evaporation on silicon thin film A 31 and silicon thin film B 32 respectively again
Then film is made metal by stripping technology and forms two electrode layers, respectively corresponds as metal electrode A 4 and metal electrode B 5.
A kind of embodiment 2: preparation method of accurate control two-dimensional material 6 luminous intensity and peak position
Firstly, substrate 1 is made using silicon, and clean substrate 1.
Layer of silicon dioxide dielectric layer 2 is deposited on substrate 1, to increase the adhesiveness between two-dimentional phase-change material and substrate 1.
Silica dioxide medium layer 2 is with a thickness of 80nm.
Later, in 2 surface silicon growth layer film of silica dioxide medium layer, by anhydrous hydrofluoric acid directly etching method by silicon
Film is divided into three parts disconnected from each other, respectively silicon thin film A 31, silicon thin film B 32 and silicon thin film C 33, then in silicon thin film
Method on B 32 and silicon thin film C 33 by transfer covers one layer of two-dimensional material 6, and two-dimensional material 6 is two telluride molybdenum of single layer, thick
Degree is 1nm, and mechanical stripping method can be used and prepare the layer.
Deposit the crome metal film of one layer of 50nm thickness by electron beam evaporation on silicon thin film A 31 and silicon thin film B 32 respectively again,
Then metal is made by stripping technology and forms two electrode layers, respectively corresponded as metal electrode A 4 and metal electrode B 5.
The structure of the luminescent device to complete in above-described embodiment can be found in shown in Fig. 1 and Fig. 2.
Embodiment 3
Compared with Example 1, the overwhelming majority is all identical, in addition in the present embodiment:
Substrate 1 with a thickness of 500 μm, silica dioxide medium layer 2 with a thickness of 10nm, metal electrode with a thickness of 10nm,
Two-dimensional material 6 is two telluride molybdenum of single layer, with a thickness of 1.5nm.
Embodiment 4
Compared with Example 1, the overwhelming majority is all identical, in addition in the present embodiment:
Substrate 1 with a thickness of 500 μm, silica dioxide medium layer 2 with a thickness of 200nm, metal electrode with a thickness of
200nm, two-dimensional material 6 is two telluride molybdenum of single layer, with a thickness of 1nm.
Embodiment 5-8
Compared with Example 1, the overwhelming majority is all identical, and in addition in the present embodiment: the material of metal electrode replaces with respectively
Gold, silver, aluminium, titanium.
It can understand the above description of the embodiments is intended to facilitate those skilled in the art and use practical
It is novel.Person skilled in the art obviously easily can make various modifications to these embodiments, and illustrating herein
General Principle be applied in other embodiments without having to go through creative labor.Therefore, the utility model is not limited to above-mentioned
Embodiment, those skilled in the art's announcement according to the present utility model, do not depart from improvement that the utility model scope is made and
Modification should be all within the protection scope of the utility model.
Claims (7)
1. the luminescent device that one kind can be precisely controlled two-dimensional material luminous intensity and peak position, which is characterized in that including substrate, growth
Silica dioxide medium layer on substrate, and it is grown in silica dioxide medium layer and three pieces of mutually isolated silicon thin films, it is described
A metal electrode is wherein grown on two pieces respectively in three pieces of silicon thin films, another piece has metal electrode with one of growth
One layer of two-dimensional material is provided between silicon thin film.
2. one kind according to claim 1 can be precisely controlled the luminescent device of two-dimensional material luminous intensity and peak position, special
Sign is that the substrate is silicon substrate, with a thickness of 500 μm.
3. one kind according to claim 1 can be precisely controlled the luminescent device of two-dimensional material luminous intensity and peak position, special
Sign is, the silica dioxide medium layer with a thickness of 10-200nm.
4. one kind according to claim 1 can be precisely controlled the luminescent device of two-dimensional material luminous intensity and peak position, special
Sign is that the material of the metal electrode is gold, silver, chromium, aluminium or titanium, with a thickness of 10-200nm.
5. one kind according to claim 1 can be precisely controlled the luminescent device of two-dimensional material luminous intensity and peak position, special
Sign is that the two-dimensional material is two telluride molybdenum of single layer, and thickness is no more than 2nm.
6. one kind according to claim 1 can be precisely controlled the luminescent device of two-dimensional material luminous intensity and peak position, special
Sign is, the silicon thin film with a thickness of 10-100nm.
7. one kind according to claim 1 can be precisely controlled the luminescent device of two-dimensional material luminous intensity and peak position, special
Sign is that it is 1-10 μm that growth, which has the spacing between two pieces of silicon thin films of metal electrode,.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109698260A (en) * | 2019-01-30 | 2019-04-30 | 上海电力学院 | The luminescent device of two-dimensional material luminous intensity and peak position can be precisely controlled |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109698260A (en) * | 2019-01-30 | 2019-04-30 | 上海电力学院 | The luminescent device of two-dimensional material luminous intensity and peak position can be precisely controlled |
| CN109698260B (en) * | 2019-01-30 | 2024-02-27 | 上海电力学院 | Light-emitting device capable of precisely controlling light-emitting intensity and peak position of two-dimensional material |
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