WO2020172918A1

WO2020172918A1 - Display panel and fabricating method therefor

Info

Publication number: WO2020172918A1
Application number: PCT/CN2019/078216
Authority: WO
Inventors: 郑立彬
Original assignee: 深圳市华星光电半导体显示技术有限公司
Priority date: 2019-02-25
Filing date: 2019-03-15
Publication date: 2020-09-03
Also published as: CN109887968A

Abstract

A display panel and a manufacturing method therefor. The manufacturing method comprises: forming a first gate (121) and a second gate (122) on a base substrate (11); forming an insulating layer (13) on the first gate (121) and the second gate (122); forming a first semiconductor layer (14) on the insulating layer (13) in a display area (101), and forming a second semiconductor layer (15) made of an metal oxide on the insulating layer (13) in a gate driving area (102); and forming a second metal layer (16) on the first semiconductor layer (14) and the second semiconductor layer (15).

Description

Display panel and manufacturing method thereof

Technical field

The present invention relates to the field of display technology, in particular to a display panel and a manufacturing method thereof.

Background technique

Because of its high electrical stability, amorphous silicon is widely used in the manufacture of TVs and mobile devices. The existing display panel made of amorphous silicon material usually includes a display area and a gate driving area. The gate driving area is provided with a gate driving circuit, and the gate driving circuit includes a driving thin film transistor.

technical problem

However, due to the low electron mobility of amorphous silicon, in order to meet the driving requirements, it is usually necessary to make the size of the driving circuit larger, which results in a larger frame of the display panel and a narrow frame cannot be realized.

Technical solutions

The object of the present invention is to provide a display panel and a manufacturing method thereof, which can reduce the frame of the display panel.

To solve the above technical problems, the present invention provides a manufacturing method of a display panel, which includes:

A first metal layer is fabricated on the base substrate, and the first metal layer is patterned so that the first metal layer located in the display area forms the first gate and the first metal layer located in the gate drive area is formed A second gate; wherein the display panel includes the display area and the gate driving area;

Forming an insulating layer on the first gate, the second gate, and the base substrate not covered by the first gate and the second gate;

A first semiconductor layer is formed on the insulating layer located in the display area and a second semiconductor layer is formed on the insulating layer located in the gate driving area; the material of the second semiconductor layer is metal oxide; The electron mobility of the material of the second semiconductor layer is greater than that of the first semiconductor layer; the material of the first semiconductor layer is amorphous silicon; and

A second metal layer is fabricated on the first semiconductor layer and the second semiconductor layer, and the second metal layer is patterned so that the second metal layer in the display area forms a first source electrode A second source and a second drain are formed with the first drain and the second metal layer located in the gate driving region.

The present invention provides a manufacturing method of a display panel, which includes:

Forming a first semiconductor layer on the insulating layer located in the display area and forming a second semiconductor layer on the insulating layer located in the gate driving area; the material of the second semiconductor layer is metal oxide;

The present invention also provides a display panel, wherein the display panel includes a display area and a gate driving area, and the display panel includes:

Base substrate

A first metal layer disposed on a base substrate, the first metal layer including a first gate located in the display area and a second gate located in the gate driving area;

An insulating layer is provided on the first gate, the second gate, and the base substrate not covered by the first gate and the second gate;

The first semiconductor layer is provided on the insulating layer of the display area;

The second semiconductor layer is provided on the insulating layer of the gate driving region; the material of the second semiconductor layer is metal oxide;

The second metal layer is provided on the first semiconductor layer and the second semiconductor layer. The second metal layer includes a first source electrode and a first drain electrode in the display area and a gate electrode The second source and the second drain of the driving area.

Beneficial effect

In the display panel and the manufacturing method thereof of the present invention, the semiconductor layer in the gate drive region is made of metal oxide, which improves the electron mobility of the semiconductor layer, reduces the size of the drive circuit, and reduces the display panel frame.

Description of the drawings

FIG. 1 is a schematic diagram of the structure of an existing display panel;

2 is a schematic structural diagram of the first step of the manufacturing method of the display panel of the present invention;

3 is a schematic structural diagram of the second step of the manufacturing method of the display panel of the present invention;

4 is a schematic structural diagram of the third step of the manufacturing method of the display panel of the present invention;

5 is a schematic structural diagram of the fourth step of the manufacturing method of the display panel of the present invention;

FIG. 6 is a schematic diagram of the structure of the display panel of the present invention.

Embodiments of the invention

The description of the following embodiments refers to the attached drawings to illustrate specific embodiments that the present invention can be implemented. The directional terms mentioned in the present invention, such as "up", "down", "front", "rear", "left", "right", "in", "out", "side", etc., are for reference only The direction of the additional schema. Therefore, the directional terms used are used to describe and understand the present invention, rather than to limit the present invention. In the figure, units with similar structures are indicated by the same reference numerals.

As shown in FIG. 1, the existing display panel includes: a base substrate 11, a first metal layer 12, an insulating layer 13, a first semiconductor layer 141, a second semiconductor layer 142, and a second metal layer 16.

The first metal layer 12 is disposed on the base substrate 11, and the first metal layer 12 includes a first gate 121 located in the display area 101 and a second gate 122 located in the gate driving area 102.

The insulating layer 13 is provided on the first gate 121 and the second gate 122 and the base substrate 11 that is not covered by the first gate 121 and the second gate 122.

The first semiconductor layer 141 is disposed on the insulating layer 13 of the display area 101.

The second semiconductor layer 142 is provided on the insulating layer 13 of the gate driving region 102; the material of the second semiconductor layer 142 is the same as the material of the first semiconductor layer 141, such as amorphous silicon or indium gallium zinc oxide .

The second metal layer 16 is disposed on the first semiconductor layer 141 and the second semiconductor layer 142, and the second metal layer 16 includes a first source electrode 161 and a first drain electrode 162 located in the display area 101 And the second source 163 and the second drain 164 located in the gate driving area 102. In addition, the display panel may further include a passivation layer 17 and pixel electrodes 18.

Please refer to FIG. 2, which is a schematic structural diagram of the first step of the manufacturing method of the display panel of the present invention.

As shown in FIG. 2, the manufacturing method of the display panel of the present invention includes:

S101. Fabricate a first metal layer on a base substrate, and perform patterning processing on the first metal layer, so that the first metal layer located in the display area forms a first gate and a first metal located in the gate driving area The layer forms the second gate.

For example, as shown in FIG. 2, a first metal layer 12 is fabricated on a base substrate 11, and the first metal layer 12 is patterned so that the first metal layer 12 located in the display area 101 forms a first gate. The electrode 121 and the first metal layer 12 located in the gate driving region 102 form a second gate 122. The display panel includes a display area 101 and a gate drive area 102. The gate drive area 102 is also known as GOA (Gate Driver on Array) area, used to set up the gate drive circuit, in the top view, it includes driving thin film transistors.

In one embodiment, the base substrate 11 may be a glass substrate.

S102, forming an insulating layer on the first gate and the second gate.

For example, as shown in FIG. 3, fabricated on the first gate 121 and the second gate 122 and the base substrate 11 not covered by the first gate 121 and the second gate 122 Insulation layer 13. In one embodiment, the material of the insulating layer 13 is silicon nitride or silicon oxide.

S103, forming a first semiconductor layer on the insulating layer located in the display area and forming a second semiconductor layer on the insulating layer located in the gate driving area.

For example, as shown in FIG. 4, a first semiconductor layer 14 is formed on the insulating layer 13 located in the display area 101 and a second semiconductor layer 15 is formed on the insulating layer 13 located in the gate driving area 102; The material of the second semiconductor layer 15 is metal oxide.

Wherein, the metal oxide includes at least one of IGZO, IZO, ITZO, GZO and ZnO.

In one embodiment, the material of the first semiconductor layer 14 is amorphous silicon.

In order to improve the conductivity of the semiconductor, the above step S103, that is, the step of forming a second semiconductor layer on the insulating layer located in the gate driving region may include:

S1031. Depositing or coating a metal oxide on the insulating layer located in the gate driving region to obtain a second semiconductor layer.

For example, a metal oxide is deposited or coated on the insulating layer 13 located in the gate driving region 102 to obtain the second semiconductor layer 15.

Of course, it is understandable that the manufacturing process of the second semiconductor layer is not limited to the above methods, and other methods may also be used.

S104. Fabricate a second metal layer on the first semiconductor layer and the second semiconductor layer, and perform a patterning process on the second metal layer so that the second metal layer located in the display area forms a first The source electrode and the first drain electrode and the second metal layer located in the gate driving region form the second source electrode and the second drain electrode.

For example, as shown in FIG. 5, a second metal layer 16 is formed on the first semiconductor layer 14 and the second semiconductor layer 15, and the second metal layer 16 is patterned so as to be located in the The second metal layer 15 of the display area 101 forms a first source 161 and a first drain 162 and the second metal layer 16 located in the gate driving area 102 forms a second source 163 and a second drain 164.

In an embodiment, the method may further include:

S105. In the first source, the first drain, the second source, the second drain, and the first source that is not covered by the first source and the first drain Forming a passivation layer on the semiconductor layer and the second semiconductor layer that is not covered by the second source electrode and the second drain electrode;

For example, as shown in FIG. 6, in the first source 161 and the first drain 162, the second source 163 and the second drain 164, and the first source 161 A passivation layer 17 is formed on the first semiconductor layer 14 covered by the first drain electrode 162 and the second semiconductor layer 15 not covered by the second source electrode 163 and the second drain electrode 164.

S106: Perform a patterning process on the passivation layer to form a via hole at a position corresponding to the first drain electrode.

For example, the passivation layer 17 is patterned, so that a via hole (not shown in the figure) is formed at a position corresponding to the first drain electrode 162.

In an embodiment, the display panel is a liquid crystal display panel, and the method may further include:

S107, forming a pixel electrode on the passivation layer and in the via hole.

For example, a pixel electrode 18 is formed on the passivation layer 17 and in the via hole, and the pixel electrode 18 is connected to the first drain electrode 162 through the via hole.

It is understandable that when the display panel is a liquid crystal display panel, the above method can be to fabricate an array substrate. Of course, in order to obtain a complete liquid crystal display panel, it can also include fabricating a color film substrate and filling liquid crystal between the two substrates. .

In another embodiment, the display panel is an organic light emitting diode display panel. The above step S107 can be replaced with:

S201, forming an anode on the passivation layer and in the via hole.

At this time, the method may further include:

A pixel definition layer, an organic functional layer, an electron transport layer, a cathode, etc. are formed on the anode.

Among them, the organic functional layer includes a hole injection layer, a hole transport layer, and an organic light-emitting layer sequentially located on the anode. The cathode material can be indium zinc oxide (IZO) or Mg/Ag composite film.

Since metal oxide is used to make the semiconductor layer of the gate drive region, and the metal oxide has the characteristics of higher mobility (about 10 times of amorphous silicon), the electron mobility of the semiconductor layer is increased and the electron mobility is reduced. The size of the thin film transistor in the gate driving area is reduced, thereby reducing the size of the driving circuit, and further reducing the frame of the display panel.

However, the electrical stability of metal oxide is worse than that of amorphous silicon, so it is not easy to apply to the entire panel.

As shown in FIG. 6, the present invention also provides a display panel manufactured by the above method, which includes: a base substrate 11, a first metal layer 12, an insulating layer 13, a first semiconductor layer 14, a second semiconductor layer 15, and The second metal layer 16.

The first semiconductor layer 14 is provided on the insulating layer 13 of the display area 101.

The second semiconductor layer 15 is disposed on the insulating layer 13 of the gate driving region 102; wherein the material of the second semiconductor layer 15 is metal oxide. The metal oxides include IGZO (indium gallium zinc oxide), IZO (indium zinc oxide), ITZO (indium tin zinc oxide), GZO (silicon-containing indium tin oxide or gallium-doped zinc oxide) and ZnO ( At least one of zinc oxide). The material of the first semiconductor layer 14 is amorphous silicon. That is, the electron mobility of the material of the second semiconductor layer 15 is greater than the electron mobility of the first semiconductor layer 14. The material of the first semiconductor layer 14 and the material of the second semiconductor layer 15 are different.

The second metal layer 16 is provided on the first semiconductor layer 14 and the second semiconductor layer 15. The second metal layer 16 includes a first source electrode 161 and a first drain electrode 162 located in the display area 101 And the second source 163 and the second drain 164 located in the gate driving area 102.

The display panel may further include a passivation layer 17 provided on the first source 161, the first drain 162, the second source 163, the second drain 164, and the The first semiconductor layer 14 that is not covered by the first source electrode 161 and the first drain electrode 162 and the second semiconductor layer that is not covered by the second source electrode 163 and the second drain electrode 164 15 on. The passivation layer 17 is provided with via holes.

In an embodiment, the display panel is a liquid crystal display panel, and the display panel may further include pixel electrodes 18. The pixel electrode 18 is disposed on the passivation layer 17 and in the via hole, and the pixel electrode 18 is connected to the first drain electrode 162 through the via hole.

In another embodiment, the display panel is an organic light emitting diode display panel.

In summary, although the present invention has been disclosed as above in preferred embodiments, the above-mentioned preferred embodiments are not intended to limit the present invention. Those of ordinary skill in the art can make various modifications without departing from the spirit and scope of the present invention. Such changes and modifications, therefore, the protection scope of the present invention is subject to the scope defined by the claims.

Claims

A manufacturing method of a display panel, which includes:

A first metal layer is fabricated on the base substrate, and the first metal layer is patterned so that the first metal layer located in the display area forms the first gate and the first metal layer located in the gate drive area is formed A second gate; wherein the display panel includes the display area and the gate driving area;

Forming an insulating layer on the first gate, the second gate, and the base substrate not covered by the first gate and the second gate;

A first semiconductor layer is formed on the insulating layer located in the display area and a second semiconductor layer is formed on the insulating layer located in the gate driving area; the material of the second semiconductor layer is metal oxide; The electron mobility of the material of the second semiconductor layer is greater than that of the first semiconductor layer; the material of the first semiconductor layer is amorphous silicon; and

A second metal layer is fabricated on the first semiconductor layer and the second semiconductor layer, and the second metal layer is patterned so that the second metal layer in the display area forms a first source electrode A second source and a second drain are formed with the first drain and the second metal layer located in the gate driving region.
The manufacturing method of the display panel according to claim 1, wherein the metal oxide includes at least one of IGZO, IZO, ITZO, GZO, and ZnO.
The manufacturing method of the display panel according to claim 1, wherein

The step of forming a second semiconductor layer on the insulating layer located in the gate driving region includes:

Depositing or coating metal oxide on the insulating layer located in the gate driving region to obtain a second semiconductor layer.
The manufacturing method of the display panel according to claim 1, wherein the method further comprises:

On the first source, the first drain, the second source, the second drain, and the first semiconductor layer not covered by the first source and the first drain And forming a passivation layer on the second semiconductor layer not covered by the second source electrode and the second drain electrode; and

The passivation layer is patterned, so that a via hole is formed in the passivation layer corresponding to the first drain electrode.
The manufacturing method of the display panel according to claim 4, wherein the method further comprises:

A pixel electrode is formed on the passivation layer and in the via hole, and the pixel electrode is connected to the first drain electrode through the via hole.
4. The manufacturing method of the display panel according to claim 4, wherein the method further comprises: manufacturing an anode on the passivation layer and in the via hole.
The manufacturing method of the display panel according to claim 1, wherein the display panel is a liquid crystal display panel or an organic light emitting diode display panel.
A manufacturing method of a display panel, which includes:

A first metal layer is fabricated on the base substrate, and the first metal layer is patterned so that the first metal layer located in the display area forms the first gate and the first metal layer located in the gate drive area is formed A second gate; wherein the display panel includes the display area and the gate driving area;

Forming an insulating layer on the first gate, the second gate, and the base substrate not covered by the first gate and the second gate;

Forming a first semiconductor layer on the insulating layer located in the display area and forming a second semiconductor layer on the insulating layer located in the gate driving area; the material of the second semiconductor layer is metal oxide; and

A second metal layer is fabricated on the first semiconductor layer and the second semiconductor layer, and the second metal layer is patterned so that the second metal layer in the display area forms a first source electrode A second source and a second drain are formed with the first drain and the second metal layer located in the gate driving region.
8. The manufacturing method of the display panel according to claim 8, wherein the metal oxide includes at least one of IGZO, IZO, ITZO, GZO, and ZnO.
8. The manufacturing method of the display panel according to claim 8, wherein the step of forming a second semiconductor layer on the insulating layer located in the gate driving region comprises:

Depositing or coating metal oxide on the insulating layer located in the gate driving region to obtain a second semiconductor layer.
The manufacturing method of the display panel according to claim 8, wherein the method further comprises:

On the first source, the first drain, the second source, the second drain, and the first semiconductor layer not covered by the first source and the first drain And forming a passivation layer on the second semiconductor layer not covered by the second source electrode and the second drain electrode; and

The passivation layer is patterned, so that a via hole is formed in the passivation layer corresponding to the first drain electrode.
11. The manufacturing method of the display panel according to claim 11, wherein the method further comprises:

A pixel electrode is formed on the passivation layer and in the via hole, and the pixel electrode is connected to the first drain electrode through the via hole.
11. The method of manufacturing a display panel according to claim 11, wherein the method further comprises: manufacturing an anode on the passivation layer and in the via hole.
8. The manufacturing method of the display panel according to claim 8, wherein the electron mobility of the material of the second semiconductor layer is greater than the electron mobility of the first semiconductor layer.
8. The manufacturing method of the display panel according to claim 8, wherein the material of the first semiconductor layer is amorphous silicon.
8. The manufacturing method of the display panel according to claim 8, wherein the display panel is a liquid crystal display panel or an organic light emitting diode display panel.
A display panel includes a display area and a gate driving area, the display panel includes:

Base substrate

A first metal layer disposed on a base substrate, the first metal layer including a first gate located in the display area and a second gate located in the gate driving area;

An insulating layer is provided on the first gate, the second gate, and the base substrate not covered by the first gate and the second gate;

The first semiconductor layer is provided on the insulating layer of the display area;

The second semiconductor layer is provided on the insulating layer of the gate driving region; the material of the second semiconductor layer is metal oxide; and

The second metal layer is provided on the first semiconductor layer and the second semiconductor layer. The second metal layer includes a first source electrode and a first drain electrode in the display area and a gate electrode The second source and the second drain of the driving area.
The display panel according to claim 17, wherein the metal oxide includes at least one of IGZO, IZO, ITZO, GZO, and ZnO.
The display panel of claim 17, wherein

The electron mobility of the material of the second semiconductor layer is greater than the electron mobility of the first semiconductor layer.
The display panel of claim 17, wherein

The display panel is a liquid crystal display panel or an organic light emitting diode display panel.