CN109698123A - A kind of substrate etching method of GaAs base LED wafer - Google Patents
A kind of substrate etching method of GaAs base LED wafer Download PDFInfo
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- CN109698123A CN109698123A CN201711010438.8A CN201711010438A CN109698123A CN 109698123 A CN109698123 A CN 109698123A CN 201711010438 A CN201711010438 A CN 201711010438A CN 109698123 A CN109698123 A CN 109698123A
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- 239000000758 substrate Substances 0.000 title claims abstract description 77
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 56
- 238000005530 etching Methods 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 35
- 230000007797 corrosion Effects 0.000 claims abstract description 35
- 238000005260 corrosion Methods 0.000 claims abstract description 35
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 25
- 230000004888 barrier function Effects 0.000 claims abstract description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 57
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 29
- 229910052757 nitrogen Inorganic materials 0.000 claims description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 23
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 14
- 239000000908 ammonium hydroxide Substances 0.000 claims description 14
- 239000011259 mixed solution Substances 0.000 claims description 14
- 230000003628 erosive effect Effects 0.000 claims description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 7
- 239000000243 solution Substances 0.000 claims description 7
- 238000005406 washing Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 238000011010 flushing procedure Methods 0.000 claims description 3
- 229910000069 nitrogen hydride Inorganic materials 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 30
- 238000012545 processing Methods 0.000 abstract description 3
- MKTJTLRLXTUJCM-UHFFFAOYSA-N azanium;hydrogen peroxide;hydroxide Chemical compound [NH4+].[OH-].OO MKTJTLRLXTUJCM-UHFFFAOYSA-N 0.000 abstract description 2
- 238000004904 shortening Methods 0.000 abstract description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 39
- 239000010410 layer Substances 0.000 description 26
- 238000004519 manufacturing process Methods 0.000 description 13
- 239000002585 base Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- GOLCXWYRSKYTSP-UHFFFAOYSA-N Arsenious Acid Chemical compound O1[As]2O[As]1O2 GOLCXWYRSKYTSP-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000000536 complexating effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000012053 enzymatic serum creatinine assay Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Led Devices (AREA)
- Weting (AREA)
Abstract
A kind of substrate etching method of GaAs base LED wafer, including following making step: (1) GaAs substrate etching；(2) it washes；(3) barrier layer removes；(4) it washes；(5) dry.The present invention passes through the proper proportion of ammonium hydroxide hydrogen peroxide solution and angle appropriate adjustment, the corrosion of bottom GaAs is rapidly completed, then using the dilute hydrochloric acid solution suitably matched, pass through the cooperation of right times, complete the corrosion on barrier layer, whole process is fast and effective, has not only completed uniform effective corrosion of substrate, but also does not have an impact to other structures.The method of the present invention whole process producing efficiency is higher, and cost is relatively low, and the dirt of wafer surface is reduced while shortening processing time, improves the yield of entire chip.The method of the present invention is suitble to the substrate etching of all GaAs base LED wafers to make.
Description
Technical field
The present invention relates to a kind of for corroding the method for GaAs based light-emitting diode wafer substrates, belongs to semiconductor devices and adds
Work technical field.
Background technique
Semiconductor light-emitting-diode is because have structure simple, and performance is stablized, and small volume, operating current is small, user
Just, at low cost, many advantages, such as energy conservation and environmental protection, service life is longer, it is all to be widely used in communication, information processing and illumination etc.
It is many-sided.Especially make in industries such as display screen, traffic lights, lamps for vehicle, liquid crystal screen backlight, lamp decoration, lighting sources
With more and more, many conveniences are brought to people's lives study etc..
For production LED chip, the problem of selection of substrate material is overriding concern.It should be suitable using which kind of
Substrate needs to be selected according to the requirement of equipment and LED component.The common substrate material of mesh first three: sapphire
(Al2O3), silicon (Si), silicon carbide (SiC).Sapphire advantage: 1, production technology is mature, device quality is preferable；2, stability
Very well, it can be used in higher temperature growth processes；3, high mechanical strength is easily handled and cleans.Sapphire deficiency: 1, lattice
Mismatch and thermal stress mismatch can generate a large amount of defects in the epitaxial layer；2, sapphire is a kind of insulator, makes two in upper surface
A electrode causes efficient lighting area reduction；3, photoetching, etching process procedure are increased, cost of manufacture is high.Silicon is the good of heat
Conductor, so the heating conduction of device can be obviously improved, to extend the service life of device.Silicon carbide substrates (CREE company
It is special using SiC material as substrate) LED chip, electrode is L-type electrode, and electric current is longitudinal flow.Using this substrate
The conduction and heating conduction of the device of production are all very good, are conducive to be made into the biggish high power device of area.Advantage: silicon carbide
Thermal coefficient be 490W/mK, be higher by 10 times or more than Sapphire Substrate.Insufficient: silicon carbide manufacturing cost is higher, realizes
Its commercialization also needs to reduce corresponding cost.Comprehensively consider, in the production of red light-emitting diode die flip structure, leads to
Silicon wafer is often selected to use as displacement substrate.
An important indicator of the luminous efficiency as LED characterizes the quality of LED chip production to a certain extent.More
Come more producers having focused on research and development in the promotion of LED chip luminous efficiency, currently, improving red LED chip
The important channel of luminous efficiency is substrate reversion, roughing in surface, production Bragg mirror, base part production current barrier layer
Deng.On the basis of substrate reversion, three-legged structure rough surface is formd to the method for N-type AlGaInP wet etching.Roughening
Surface can reduce light in the multiple reflections of AlGaInP material internal, come out light from internal refraction, to improve out light efficiency
Rate.In the manufacturing process of LED wafer, wherein an important link for influencing light extraction efficiency is thoroughly to corrode,
During silicon wafer displacement GaAs substrate processing, the quality of GaAs substrate etching influences entire making technology.We are in GaAs
In the corrosion of substrate, it is desirable to be able in the shortest time, uniformly surface Ga As substrate is thoroughly corroded, however by corrosive liquid
With the restriction of etching process, usually occurs corroding non-uniform situation or corrosion is not thorough, there are a large amount of Ga and As metal ions
Surface excessive erosion phenomenon is remained or occurs, which all can bring adverse effect to the production that continues of electrode below, such as
Electrode adherency is insecure, and light extraction efficiency is not high.
Chinese patent literature CN102618936A proposes a kind of gallium arsenide surface chemical corrosion method and chemical corrosion liquid,
Embathed in ammonium hydroxide first, then gallium arsenide wafer be put into chemical corrosion liquid, 10 DEG C -40 DEG C at a temperature of, corrode chip
Surface；Then it is washed by water using deionized water；Finally dry chip.This method is rotten using the chemistry that ammonium hydroxide, hydrogen peroxide, water are configured to
Erosion liquid carries out corrosion chip, but because chip carries the difference for the rate corroded in corrosion process entire surface, it is easy to it generates, portion
Subregion excessive erosion and partial region are corroded halfway situation and are occurred, and do not refer to the specific side for solving the problems, such as this in scheme
Method.
CN104518056A proposes a kind of preparation method of reversed polarity AlGaInP red LED chip, it is mentioned that corrosion
GaAs substrate, and chip is vertically rotated into 180 degree, continue to corrode.Blocking using concentrated sulfuric acid solution to wafer surface
Layer is corroded.Wherein used substrate etching liquid is the mixed solution of ammonium hydroxide and water, and it is thoroughly rotten which carries out GaAs
Erosion rate is easier to control, and relatively uniformly, still, elapsed time is longer, and efficiency is lower.
In consideration of it, it is necessary to study a kind of method that GaAs substrate can thoroughly be corroded, can either uniform and complete it is quick
The phenomenon that erode substrate again be not in excessive corrosion improves production efficiency to improve chip yield.
The excessive erosion that the present invention mentions refers to:
When carrying out substrate etching, corrosion rate or the etching time control of corrosive liquid were not easy to appear at that time to adherency
The permeating corrosion phenomenon of the metallic diaphragms such as layer, P-type electrode layer, barrier layer, wherein it is especially the most obvious with adhesion layer, then there is corruption
When losing phenomenon, entire substrate of replacing is easy to fall off.
Summary of the invention
For existing substrate etching technology there are the drawbacks of, the present invention propose one kind can effectively quickly thoroughly corrosion lining
Bottom, and the substrate etching method for the GaAs base LED wafer not having a negative impact to chip.
The substrate etching method of GaAs base LED wafer of the invention, includes the following steps:
(1) GaAs substrate etching:
1. the ratio of ammonium hydroxide and hydrogen peroxide 1:5~1:7 by volume to be configured to the mixed solution of ammonium hydroxide and hydrogen peroxide；It will
Mixed solution heating temperature is stand-by to 40~50 DEG C of holding constant temperature；
2. GaAs substrate is thoroughly put into the mixed solution of holding constant temperature of 40~50 DEG C of (entire chip is put into), and right
Then mixed solution ultrasonic vibration was placed the substrate into (entire chip is put into) pure water and is rushed to GaAs substrate etching 3~5 minutes
It washes -3 minutes 1 minute；
3. substrate (entire chip) is rotated α °, continue corrosion 3 minutes~5 minutes；
4. step is repeated 3., until the thorough etching away of GaAs substrate；
(2) first wash: the LED wafer for eroding substrate is placed, nitrogen, bath is carried out washing by water and led in screw clamp
Time 5 minutes~10 minutes；
(3) barrier layer removes: the LED wafer after the first washing being placed into aqueous hydrochloric acid solution and corroded, when corrosion
Between be 10~30 seconds；The volume ratio of hydrochloric acid and water is 1:1~1:1.5 in aqueous hydrochloric acid solution；
(4) second wash: the LED wafer for removing barrier layer is placed, nitrogen, bath is carried out washing by water and led in screw clamp
Time 5 minutes~10 minutes；
(5) dry: the chip after second wash is dried.
The density of ammonia spirit in the step (1) is 0.88g/mL, NH3Content is 20-30%；Hydrogen peroxide solution
Density is 1.11g/mL, H2O2Content be 25% or more.
Supersonic frequency in the step (1) is 5Khz~15Khz.Further preferred ultrasonic frequency is 10Khz.
The step (1) 3. in substrate rotate α ° be 30 < α < 90.
Hydrochloric acid density in the step (3) is 1.18g/ml, and content is 36~38%.
Drying in the step (5), which refers to, to be spin-dried for using spinner or is dried up using 40-80 DEG C of heated nitrogen, is applied
The time for adding nitrogen is 2-10 minutes.
The step (2) and bath in (4) and logical nitrogen refer to deionized water spray, lower water supply (overflow) and logical nitrogen
The mode of gas is cleaned.
Nitrogen gas purity >=99.999% in the step (2) and (4), nitrogen pressure 0.1-0.3MPa.To guarantee nitrogen
It is pure and using safe.The further preferred nitrogen is 5N nitrogen.
The invention has the characteristics that:
1. step (1), the mixed solution of ammonium hydroxide and hydrogen peroxide is selected in the corrosion of GaAs substrate, main to utilize the strong of hydrogen peroxide
The complexing of oxidisability and ammonium hydroxide.It can be generated and be reacted with GaAs using the strong oxidizing property of hydrogen peroxide, generate As2O3, Ga2O3,
GaAsO4Deng, and sub-compound can be oxidized to high price compound by hydrogen peroxide in alkaline environment, convert indissoluble object
At soluble matter.The ionization equilibrium of ammonium hydroxide can provide amino molecule but also provide hydroxyl, both can use alkali and metal occurs instead
It answers, and its complexing can be utilized, metal ion and metal oxide are generated into soluble complex compound, thus easier
Remove.
2. in step (1), the ratio of ammonium hydroxide and hydrogen peroxide and its important, which relatively effective can be corroded
The corrosion of GaAs substrate, and its corrosion rate can be effectively controlled, and successfully inhibit excessive erosion phenomenon, especially make mixed solution
Being maintained at steady temperature, (if uncontrolled, in corrosion, solution temperature is increased very fast, and opposite corrosion can be accelerated, corrosion speed
Rate is unable to control), so that the uniformity of corrosion rate is effectively guaranteed, while cooperating the use of ultrasound, it can be more
Rapidly and uniformly complete the corrosion of substrate.
3. in step (1), according to rotation chip certain angle clockwise (or counterclockwise), more crucial, which can
To guarantee the uniformity of LED wafer GaAs substrate all directions corrosion.In the present invention, rotation angular configurations 30 ° to 90 ° it
Between, it is difficult to ensure that the uniformity in a direction, loses using effect when greater than 90 °, when less than 30 °, operate relatively complicated, bath time
Number it is more, production efficiency is lower, it is appropriate rotation angle both ensure that corrosion substrate all directions uniformity, in turn ensure compared with
Fast corrosion efficiency.
4. the cooperation of selected ultrasonic power and steady temperature is extremely important, provided in the present invention in step (1)
Parameter combination can not have an impact inner wafer structure on the basis of promoting the accelerated corrosion of GaAs substrate, can be compared with
Increase substantially corrosion quality.
5. in step (3), in the removal on barrier layer, the ratio of the hydrochloric acid used and the combination of proper time are extremely important,
In the parameter combination, it can either guarantee quickly to remove barrier layer, corrosion phenomenon will not be generated to remaining metal by having, and be improved entire
The yield of chip.
Detailed description of the invention
Fig. 1 is complete structure schematic diagram of the GaAs base LED wafer before corroding substrate in the present invention.
Fig. 2 is the step schematic diagram of the substrate etching method of GaAs base LED wafer of the present invention.
Fig. 3 is that step in the present invention (1) completes the chip schematic diagram after GaAs substrate etching.
Fig. 4 is the chip schematic diagram behind step in the present invention (3) removal barrier layer.
Specific embodiment
As shown in Figure 1, what is referred in the present invention does not carry out the GaAs base LED wafer before substrate etching, from bottom to top according to
Secondary is GaAs substrate, barrier layer (GaInP), GaAs layers heavily doped, " other structures ", adhesion layer and displacement Si substrate." other knots
Structure " at least includes the P-type electrode structure of metal layer formation, the barrier for preventing P-type electrode metal Yu the counterdiffusion of adhesion layer metal phase
Layer, GaAs layers of p-type, GaAs layers of N-type and quantum well layer etc..The metal that the adhesion layer uses can for Au, Al, Ni, Ag, Sn or
In etc..
The method that the present invention corrodes the substrate of the LED wafer of GaAs base shown in Fig. 1, as shown in Fig. 2, including following step
It is rapid:
(1) GaAs substrate etching:
1. preparing the mixed solution of ammonium hydroxide and hydrogen peroxide, liquor capacity ratio, ammonium hydroxide: hydrogen peroxide=1:5~1:7；It is put into
In ultrasonic device, heating temperature is stand-by to 40 DEG C~50 DEG C holding constant temperature, and ultrasonic power is 5Khz~15Khz.
The density of ammonia spirit is 0.88g/mL, NH3Content is 20-30%；The density of hydrogen peroxide solution is 1.11g/mL,
H2O2Content be 25% or more.
2. entire GaAs base LED wafer is put into the mixed solution of ammonium hydroxide and hydrogen peroxide (makes GaAs substrate thorough in this way
Mixed solution is immersed at bottom), 40 DEG C~50 DEG C constant temperature are kept, to substrate etching 3~5 minutes, then placing the substrate into (was entire crystalline substance
Piece is put into) it rinses -3 minutes 1 minute in pure water；
3. substrate is continued 3~5 points of corrosion according to direction rotation α degree (30 < α < 90) clockwise (or counterclockwise)
Clock；
4. step is repeated 3., until the thorough etching away of GaAs substrate, obtains chip as shown in Figure 3.
(2) first wash:
LED wafer after completion GaAs substrate etching is placed and carries out washing by water in screw clamp and leads to nitrogen, flushing period 5 divides
Clock~10 minute.Nitrogen gas purity >=99.999% used, nitrogen pressure 0.1-0.3MPa, to guarantee the pure of nitrogen and use
Safety.It is preferred that nitrogen is 5N nitrogen.
It washes by water and leads to nitrogen and refer to: being cleaned with the mode of deionized water spray, lower water supply (overflow) and logical nitrogen.
(3) barrier layer is removed:
The LED wafer for completing bath for the first time is placed into diluted hydrochloric acid aqueous solution and corrodes, etching time is 10~
30 seconds, the ratio of hydrochloric acid and water was 1:1~1:1.5 in diluted hydrochloric acid aqueous solution, and wherein hydrochloric acid density is 1.18g/ml, content 36
~38%.Obtain chip as shown in Figure 4.
(4) second wash:
The LED wafer that barrier layer will be removed is placed in screw clamp, is washed by water by first wash and is led to nitrogen mode, when bath
Between 5 minutes~10 minutes.
(5) dry:
The GaAs base LED wafer for completing step (4) is spin-dried for using spinner, or uses 40-80 DEG C of heating
It is dried with nitrogen, the time for applying nitrogen is 2-10 minutes.
GaAs base LED wafer after the above method makes can complete the complete of GaAs substrate within a short period of time
Corrosion, and to the other film layers of chip (including adhesion layer, p-type metal electrode, barrier layer etc.) without any damage, wafer surface is not
There is excessive erosion phenomenon, has reached process requirement.
In the present invention, is cleaned by the corrosion of ammonium hydroxide hydrogen peroxide mixed solution, accomplished that Quick uniform thoroughly corrodes substrate
Requirement, whole process producing efficiency is higher, and cost is relatively low, reduces the pollution of wafer surface while shortening processing time and asks
Topic, improves the yield of entire chip, the method for the present invention is suitble to the substrate etching of all GaAs base LED wafers to make.
Claims (8)
1. a kind of substrate etching method of GaAs base LED wafer, characterized in that include the following steps:
(1) GaAs substrate etching:
1. the ratio of ammonium hydroxide and hydrogen peroxide 1:5~1:7 by volume to be configured to the mixed solution of ammonium hydroxide and hydrogen peroxide；It will mixing
Solution heating temperature is stand-by to 40~50 DEG C of holding constant temperature；
2. GaAs substrate is thoroughly put into 40~50 DEG C of the mixed solution of holding constant temperature, and to mixed solution ultrasonic vibration,
To GaAs substrate etching 3~5 minutes, then places the substrate into pure water and rinse -3 minutes 1 minute；
3. substrate is rotated α °, continue corrosion 3 minutes~5 minutes；
4. step is repeated 3., until the thorough etching away of GaAs substrate；
(2) first wash: the LED wafer for eroding substrate is placed and carries out washing by water in screw clamp and leads to nitrogen, flushing period 5
Minute~10 minutes；
(3) barrier layer removes: the LED wafer after the first washing being placed into aqueous hydrochloric acid solution and is corroded, etching time is
10~30 seconds；The volume ratio of hydrochloric acid and water is 1:1~1:1.5 in aqueous hydrochloric acid solution；
(4) second wash: the LED wafer for removing barrier layer is placed and carries out washing by water in screw clamp and leads to nitrogen, flushing period 5
Minute~10 minutes；
(5) dry: the chip after second wash is dried.
2. the substrate etching method of GaAs base LED wafer according to claim 1, characterized in that in the step (1)
The density of ammonia spirit is 0.88g/mL, NH3Content is 20-30%；The density of hydrogen peroxide solution is 1.11g/mL, H2O2Content
It is 25% or more.
3. the substrate etching method of GaAs base LED wafer according to claim 1, characterized in that in the step (1)
Supersonic frequency is 5 Khz~15Khz.
4. the substrate etching method of GaAs base LED wafer according to claim 1, characterized in that the step (1) 3. in
Substrate rotate α ° be 30 < α < 90.
5. the substrate etching method of GaAs base LED wafer according to claim 1, characterized in that in the step (3)
Hydrochloric acid density is 1.18g/ml, and content is 36~38%.
6. the substrate etching method of GaAs base LED wafer according to claim 1, characterized in that in the step (5)
Drying, which refers to, to be spin-dried for using spinner or is dried up using 40-80 DEG C of heated nitrogen, and the time for applying nitrogen is 2-10 minutes.
7. the substrate etching method of GaAs base LED wafer according to claim 1, characterized in that the step (2) and
(4) bath and logical nitrogen in refer to is cleaned with the mode of deionized water spray, lower water supply and logical nitrogen.
8. the substrate etching method of GaAs base LED wafer according to claim 1, characterized in that the step (2) and
(4) nitrogen gas purity >=99.999% in, nitrogen pressure 0.1-0.3MPa.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711010438.8A CN109698123B (en) | 2017-10-24 | 2017-10-24 | Substrate corrosion method of GaAs-based LED wafer |
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| CN201711010438.8A CN109698123B (en) | 2017-10-24 | 2017-10-24 | Substrate corrosion method of GaAs-based LED wafer |
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| CN109698123A true CN109698123A (en) | 2019-04-30 |
| CN109698123B CN109698123B (en) | 2020-09-18 |
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| CN113284986A (en) * | 2021-03-29 | 2021-08-20 | 华灿光电（浙江）有限公司 | Preparation method of light-emitting diode epitaxial wafer |
| CN114899696A (en) * | 2022-05-19 | 2022-08-12 | 山东大学 | Substrate corrosion method of GaAs-based VECSEL laser |
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| CN114899696A (en) * | 2022-05-19 | 2022-08-12 | 山东大学 | Substrate corrosion method of GaAs-based VECSEL laser |
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