CN114899696A - Substrate corrosion method of GaAs-based VECSEL laser - Google Patents
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- 230000007797 corrosion Effects 0.000 title claims abstract description 99
- 238000005260 corrosion Methods 0.000 title claims abstract description 99
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 51
- 239000000758 substrate Substances 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000007788 liquid Substances 0.000 claims abstract description 20
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 59
- 238000005530 etching Methods 0.000 claims description 57
- 239000000243 solution Substances 0.000 claims description 36
- 230000004888 barrier function Effects 0.000 claims description 25
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 20
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 20
- 238000004140 cleaning Methods 0.000 claims description 20
- 239000011259 mixed solution Substances 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 19
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 16
- 239000008367 deionised water Substances 0.000 claims description 13
- 229910021641 deionized water Inorganic materials 0.000 claims description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 12
- 239000000376 reactant Substances 0.000 claims description 11
- 238000003760 magnetic stirring Methods 0.000 claims description 8
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 238000005406 washing Methods 0.000 claims description 6
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- GOLCXWYRSKYTSP-UHFFFAOYSA-N Arsenious Acid Chemical compound O1[As]2O[As]1O2 GOLCXWYRSKYTSP-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- COHDHYZHOPQOFD-UHFFFAOYSA-N arsenic pentoxide Chemical compound O=[As](=O)O[As](=O)=O COHDHYZHOPQOFD-UHFFFAOYSA-N 0.000 description 2
- 230000000536 complexating effect Effects 0.000 description 2
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0217—Removal of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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- Condensed Matter Physics & Semiconductors (AREA)
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- Optics & Photonics (AREA)
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Abstract
The invention relates to a substrate corrosion method of a GaAs-based VECSEL laser, which controls the speed of coarse corrosion and fine corrosion by a specific corrosion liquid, wherein the corrosion speed of the coarse corrosion is high, the corrosion rate of the coarse corrosion is 7.33 mu m/min, the surface is rough after corrosion, the rough corrosion can be easily observed under a microscope, the corrosion rate of the fine corrosion is reduced, the corrosion rate of the fine corrosion is 2 mu m/min, the surface is smooth after corrosion, and the difference between the rough corrosion rate and the fine corrosion surface can be observed by naked eyes.
Description
Technical Field
The invention relates to a substrate corrosion method of a GaAs-based VECSEL laser, belonging to the technical field of crystal epitaxial wafer processing.
Background
GaAs is used as an important material of a semiconductor material, belongs to a III-V group compound semiconductor, belongs to a sphalerite type lattice structure, and has wide band gap, high resistivity, high electron mobility and the like, so that the GaAs has huge application potential in the aspects of high-frequency and high-power devices and epitaxial growth, and a semiconductor device made of the GaAs has the advantages of good high-frequency, high-temperature and low-temperature performances, low noise, strong radiation resistance and the like. In addition, it can be used to make transfer device-body effect device, so GaAs is a material with many advantages in semiconductor material.
The VECSEL laser is also called a vertical external cavity surface emitting laser, also called a semiconductor disc laser, and has a flip chip structure which grows according to a GaAs substrate, a quantum well structure and a distributed Bragg reflector in sequence, the laser output beam quality of a spectrum range from 660nm to 5000nm can be realized through structural design, and frequency doubling, mode locking and single-frequency operation can be realized. In order to fabricate a high performance VECSEL laser it is usually necessary to lift off the original substrate and transfer the device structure from the original substrate to a new submount. At present, the substrate is stripped mainly by using laser, the laser stripping is to focus high-energy laser to the interface of the substrate and an epitaxial layer, and an epitaxial buffer layer is instantaneously melted by point-by-point scanning of the laser, so that the substrate and the epitaxial layer are stripped. However, laser lift-off has a number of drawbacks, such as damage to the epitaxial layer, and it is difficult to achieve very uniform lift-off. This eventually results in the defects of leakage, low yield, etc. of the devices fabricated by laser lift-off.
The technical scheme of stripping the original substrate by using a wet etching method can avoid damage caused by thermal shock of the laser stripped substrate and improve the yield, but the existing wet etching GaAs substrate has slow etching rate and unstable etching effect, and an epitaxial structure obtained after etching has poor appearance and poor performance, so that a high-performance device is difficult to manufacture finally.
Effective substrate removal is therefore important for VECSEL lasers, but it is currently a challenge to completely strip the epitaxial structure from the GaAs substrate.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a substrate etching method of a GaAs-based VECSEL laser.
The substrate corrosion method provided by the invention is used for carrying out coarse corrosion and fine corrosion on the cleaned GaAs epitaxial wafer under the condition of room-temperature stirring aiming at the chemical properties of GaAs, the substrate can be quickly removed by the coarse corrosion, the surface quality after corrosion can be improved by the fine corrosion, the problems of slow corrosion rate and unstable corrosion effect of the existing GaAs substrate are solved, and the GaAs epitaxial structure based on the VECSEL laser with small surface roughness and high flatness can be quickly obtained.
Interpretation of terms:
VECSEL laser: vertical external cavity surface emitting lasers, also known as semiconductor disk lasers.
GaAs: is a semiconductor material and is a good epitaxial substrate material.
Reduction of the thickness of the substrate: the method of the present invention refers to the removal of the thickness of the substrate after chemical etching, which is referred to as the removal of the thickness of the substrate, compared to the thickness removed before processing.
Chemical corrosion: the method is characterized in that chemical reaction is adopted to enable GaAs and corrosive liquid to react so as to achieve the purpose of removing the GaAs substrate.
In order to realize the purpose, the invention is realized by the following technical scheme:
a substrate etching method of a GaAs-based VECSEL laser comprises the following steps:
(1) ultrasonic cleaning
Putting the GaAs epitaxial wafer into deionized water for ultrasonic cleaning for 5-20 min;
(2) rough etching
Placing the cleaned GaAs epitaxial wafer into a crude corrosion solution, and performing crude corrosion by magnetic stirring at room temperature, wherein the crude corrosion solution is a mixed solution prepared by ammonia water and hydrogen peroxide according to a volume ratio of 1: 8-1: 10;
(3) one-time cleaning
Placing the roughly etched substrate into pure water for washing for 1-3 minutes, and cleaning to remove residual reactants and corrosive liquid on the surface;
(4) fine corrosion of
Placing the cleaned GaAs epitaxial wafer into a fine etching solution, and performing fine etching by magnetic stirring at room temperature, wherein the fine etching solution is prepared from concentrated sulfuric acid, hydrogen peroxide and deionized water according to a volume ratio of 1: (4-6) preparing a mixed solution according to the proportion;
(5) secondary cleaning
Washing the finely etched substrate in pure water for 1-3 min, and cleaning to remove residual reactant and corrosive liquid on the surface;
(6) barrier removal layer
Placing the cleaned GaAs epitaxial wafer into a barrier layer removing corrosion solution, and corroding the corrosion barrier layer at room temperature, wherein the barrier layer removing corrosion solution is prepared by mixing concentrated hydrochloric acid and concentrated nitric acid in a volume ratio of (1-3): (1-3) preparing a mixed solution according to the proportion;
(7) three times of cleaning
And cleaning the GaAs epitaxial wafer after the barrier layer is removed to remove residual reactants and corrosive liquid on the surface.
Preferably, in step (2), the crude etching solution is a mixed solution prepared by mixing ammonia water and hydrogen peroxide in a volume ratio of 1: 9.
Preferably, according to the invention, in step (2), the etching time is from 20 to 25 minutes.
The crude corrosion solution of the invention is a mixed solution of ammonia water and hydrogen peroxide, and the strong oxidizing property of the hydrogen peroxide and the complexing action of the ammonia water are utilized. The strong oxidizing property of the hydrogen peroxide can react with GaAs to generate As2O3, Ga2O3, GaAsO4 and the like, and the hydrogen peroxide can oxidize low-valence compounds into high-valence compounds in an alkaline environment to convert insoluble matters into soluble matters. The ionization balance of ammonia water can provide ammonia molecules and hydroxide radicals, and the alkali can react with metal and can also be used for complexing to generate soluble complex from metal ions and metal oxides, so that the soluble complex can be removed easily. The volume ratio of the ammonia water to the hydrogen peroxide in the crude corrosion solution is critical, if the volume ratio of the ammonia water to the hydrogen peroxide is too large, the corrosion rate is reduced, the corrosion time is increased, the ammonia water and the hydrogen peroxide both have very strong volatility, and the overlong corrosion time is not favorable for the stability of devices. If the volume ratio of ammonia water to hydrogen peroxide solution is too small, the etching rate is too fast, the generated reactant is easy to adhere to the surface of the wafer, the reaction is difficult to carry out, and the reaction with too small volume ratio violently generates a large amount of bubbles in the etching process, so that the side protection of the epitaxial wafer is damaged, and the stability of the device is not facilitated. Preventing further reaction of the solution.
Preferably, in step (4), the fine etching solution is concentrated sulfuric acid, hydrogen peroxide and deionized water in a volume ratio of 1: 5 in the ratio of the total weight of the raw materials.
Preferably, in step (4), the etching time is 20-25 minutes until a pink InGaAs etch barrier layer appears.
Preferably, in step (6), the solution for removing the barrier layer is concentrated hydrochloric acid and concentrated nitric acid in a volume ratio of 2: 3, and preparing a mixed solution.
Preferably, according to the invention, in step (6), the etching time is 1 to 2 minutes.
The equipment used in the invention is ultrasonic cleaning equipment and magnetic stirring equipment, and belongs to the prior art. The method is not limited by cleaning equipment and magnetic stirring equipment, and any relevant equipment meeting the chemical corrosion requirements of semiconductors can be used.
The method controls the speed of coarse corrosion and fine corrosion through specific corrosive liquid, the corrosion speed of the coarse corrosion is high, the corrosion rate of the coarse corrosion is 7.33 mu m/min, the surface is rough after corrosion, the rough corrosion can be easily observed under a microscope, the corrosion rate of the fine corrosion is reduced, the corrosion rate of the fine corrosion is 2 mu m/min, the surface is smooth after corrosion, and the difference between the fine corrosion and the surface can be observed by naked eyes, so that the problems of low corrosion rate and unstable corrosion effect of the existing GaAs substrate are solved, and the GaAs epitaxial structure based on the VECSEL laser with small surface roughness and high flatness can be quickly obtained.
The invention has the following advantages:
1. the invention selects the crude corrosion liquid of ammonia water hydrogen peroxide system to carry out crude corrosion at room temperature, the corrosion rate is 6-10 mu m/min, the defect of slow corrosion rate of the traditional GaAs is overcome, the GaAs substrate can be thinned quickly, and the corrosion rate is improved.
2. The invention selects the fine corrosive liquid of concentrated sulfuric acid hydrogen peroxide system to carry out fine corrosion at room temperature, the corrosion rate is 2-4 mu m/min, the defect of poor GaAs corrosion effect is overcome, and the corrosion quality can be improved under the condition of keeping the corrosion rate; the fine corrosive liquid mainly utilizes the strong oxidizing property of hydrogen peroxide and the oxidizing action of concentrated sulfuric acid, mainly produces As2O3, Ga2O3, As2O5 and the like, soluble substances are generated by reaction and dissolved in the solution, and sulfuric acid can promote the improvement of the corrosion ratio of arsenic and gallium by proper heating, so that a more complete corrosion surface can be obtained.
3. The barrier layer removing corrosive liquid can rapidly remove a corrosion barrier layer and a corrosion barrier layer of InGaAs, the corrosive liquid rapidly corrodes the InGaAs corrosion barrier layer mainly through the strong oxidizing property of concentrated hydrochloric acid and concentrated nitric acid, the corrosion effect of the corrosive liquid on GaAs is very weak, the selective corrosion effect is achieved, the GaAs cap layer under the corrosion barrier layer is not damaged, and a complete epitaxial structure is obtained.
4. The method has the advantages of simple process flow and high efficiency, overcomes the problems of low corrosion rate and unstable corrosion effect of the existing GaAs substrate, and can quickly obtain the GaAs epitaxial structure based on the VECSEL laser with small surface roughness and high flatness.
Drawings
FIG. 1 is an atomic structural diagram of GaAs;
FIG. 2 is the epitaxial structure after the etch stop layer has been removed by the method of example 1;
FIG. 3 is a surface quality structure of an epitaxial wafer after the etch stop layer has been removed by the method of comparative example 2;
fig. 4 is a surface quality structure of an epitaxial wafer after removing a corrosion barrier layer by the method of comparative example 4.
Detailed Description
The embodiments of the present invention will be described in detail below with reference to the drawings and examples, but the scope of the present invention is not limited thereto.
Example 1:
the substrate etching method of the GaAs-based VECSEL laser comprises the following steps:
(1) ultrasonic cleaning
Putting the GaAs epitaxial wafer into a beaker of deionized water, and cleaning the surface after ultrasonic cleaning is carried out for 10min at room temperature to ensure the cleanness of the surface;
(2) rough etching
Placing the cleaned GaAs epitaxial wafer into a crude corrosion solution, and carrying out crude corrosion for 20 minutes at room temperature by magnetic stirring, wherein the crude corrosion solution is a mixed solution prepared by ammonia water and hydrogen peroxide according to the volume ratio of 1: 9;
(3) one-time cleaning
Placing the roughly etched substrate into pure water for washing for 1-3 minutes, and cleaning to remove residual reactants and corrosive liquid on the surface;
(4) fine corrosion of
And (3) placing the cleaned GaAs epitaxial wafer into a fine etching solution, and performing fine etching for 20 minutes by magnetic stirring at room temperature, wherein the fine etching solution is prepared from concentrated sulfuric acid, hydrogen peroxide and deionized water in a volume ratio of 1: 5, preparing a mixed solution according to the proportion;
(5) secondary cleaning
Washing the finely etched substrate in pure water for 1-3 min, and cleaning to remove residual reactant and corrosive liquid on the surface;
(6) barrier removal layer
Placing the cleaned GaAs epitaxial wafer into barrier layer removing corrosive liquid, corroding the corrosion barrier layer for 1 minute at room temperature, wherein the barrier layer removing corrosive liquid is prepared by mixing concentrated hydrochloric acid and concentrated nitric acid according to a volume ratio of 2: 3, preparing a mixed solution according to the proportion;
(7) three times of cleaning
And cleaning the GaAs epitaxial wafer after the barrier layer is removed to remove residual reactants and corrosive liquid on the surface.
Example 2:
the etching method is the same as that described in example 1, except that:
the crude corrosion solution in the step (2) is a mixed solution prepared by ammonia water and hydrogen peroxide according to the volume ratio of 1: 8.
Example 3:
the etching method is the same as that described in example 1, except that:
in the step (4), the fine corrosion solution is concentrated sulfuric acid, hydrogen peroxide and deionized water according to a volume ratio of 1: 4, and preparing a mixed solution.
Comparative example 1:
when the method 200810204629.2 embodiment 3 is adopted to etch the GaAs substrate, the etching time is too long, and the photoresist protected at the side is damaged, so that the side of the epitaxial wafer is etched, which does not meet the requirement of etching surface quality of the GaAs substrate based on the VECSEL laser.
Comparative example 2
The etching method is the same as that described in example 1, except that:
the crude corrosion solution in the step (2) is a mixed solution prepared by ammonia water and hydrogen peroxide according to the volume ratio of 1: 3. The other was carried out as in example 1.
The surface quality structure of the epitaxial wafer after the etch stop layer is removed is shown in fig. 3. It is obvious from fig. 3 that two holes are etched on the side edge of the epitaxial wafer, which cannot meet the etching requirement of VECSEL based on GaAs epitaxial wafer etching, and when the volume ratio of ammonia water to hydrogen peroxide in the crude etching solution is too small, and the ammonia water concentration is too high, the reaction speed is too fast and a large amount of bubbles are generated, so that the active region of the epitaxial wafer is penetrated due to uneven etching.
Comparative example 3
The etching method is the same as that described in example 1, except that:
the crude corrosion solution in the step (2) is a mixed solution prepared by ammonia water and hydrogen peroxide according to the volume ratio of 1: 15. The other was carried out as in example 1.
When the volume ratio of the ammonia water to the hydrogen peroxide in the crude etching solution is less than 1:9, the ammonia water concentration is too low, the etching rate is slowed down to be less than 1 μm/min from the original 6-10 μm/min, the etching time is changed to be 6-10 times of the original time, the etching time is too long, the uniformity of etching cannot be ensured, and the processing requirement of the epitaxial wafer cannot be met.
Comparative example 4
The etching method is the same as that described in example 1, except that:
in the step (4), the fine corrosion solution is concentrated sulfuric acid, hydrogen peroxide and deionized water according to a volume ratio of 1: 2, and (3) preparing a mixed solution. The other was carried out as in example 1.
The surface quality structure of the epitaxial wafer after the etching barrier layer is removed is shown in fig. 4, and as can be seen from fig. 4, the etching effect is poor, and a large amount of reactants are deposited on the surface of the epitaxial wafer, so that the processing requirement of the epitaxial wafer cannot be met. The volume ratio of the fine corrosion solution, concentrated sulfuric acid, hydrogen peroxide and deionized water is less than 1: at 4, the quality of the etched surface is reduced due to the increased sulfuric acid concentration.
Comparative example 5
The etching method is the same as that described in example 1, except that:
in the step (4), the fine corrosion solution is concentrated sulfuric acid, hydrogen peroxide and deionized water according to a volume ratio of 1:10, and preparing a mixed solution. The other was carried out as in example 1.
When the volume ratio of the fine etching solution and the concentrated sulfuric acid to the hydrogen peroxide to the deionized water is too large, for example, when the volume ratio is 1: 1: when the etching time is 10 hours, the etching rate is greatly reduced, the etching rate is about 0.1-0.5 mu m/min, the etching rate is too slow, and the surface of the epitaxial wafer is easily damaged due to uneven etching when the etching time is too long.
Claims (7)
1. A substrate etching method of a GaAs-based VECSEL laser comprises the following steps:
(1) ultrasonic cleaning
Putting the GaAs epitaxial wafer into deionized water for ultrasonic cleaning for 5-20 min;
(2) rough etching
Placing the cleaned GaAs epitaxial wafer into a crude corrosion solution, and performing crude corrosion by magnetic stirring at room temperature, wherein the crude corrosion solution is a mixed solution prepared by ammonia water and hydrogen peroxide according to a volume ratio of 1: 8-1: 10;
(3) one-time cleaning
Placing the roughly etched substrate into pure water for washing for 1-3 minutes, and cleaning to remove residual reactants and corrosive liquid on the surface;
(4) fine corrosion of
Placing the cleaned GaAs epitaxial wafer into a fine etching solution, and performing fine etching by magnetic stirring at room temperature, wherein the fine etching solution is prepared from concentrated sulfuric acid, hydrogen peroxide and deionized water according to a volume ratio of 1: (4-6) preparing a mixed solution according to the proportion;
(5) secondary cleaning
Washing the finely etched substrate in pure water for 1-3 min, and cleaning to remove residual reactant and corrosive liquid on the surface;
(6) barrier removal layer
Placing the cleaned GaAs epitaxial wafer into a barrier layer removing corrosion solution, and corroding the corrosion barrier layer at room temperature, wherein the barrier layer removing corrosion solution is prepared by mixing concentrated hydrochloric acid and concentrated nitric acid in a volume ratio of (1-3): (1-3) preparing a mixed solution according to the proportion;
(7) three times of cleaning
And cleaning the GaAs epitaxial wafer after the barrier layer is removed to remove residual reactants and corrosive liquid on the surface.
2. The method according to claim 1, wherein in the step (2), the crude etching solution is a mixed solution prepared by mixing ammonia water and hydrogen peroxide in a volume ratio of 1: 9.
3. The method according to claim 1, wherein in the step (2), the etching time is 20 to 25 minutes.
4. The method according to claim 1, wherein in the step (4), the fine etching solution is concentrated sulfuric acid, hydrogen peroxide and deionized water in a volume ratio of 1: 5 in the ratio of the total weight of the raw materials.
5. The method of claim 1, wherein in step (4), the etching time is 20-25 minutes until a pink InGaAs etch barrier layer appears.
6. The method according to claim 1, wherein in the step (6), the de-blocking layer corrosion solution is concentrated hydrochloric acid and concentrated nitric acid in a volume ratio of 2: 3, and preparing a mixed solution.
7. The method according to claim 1, wherein in the step (6), the etching time is 1 to 2 minutes.
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