CN109687738A - Realize the anti-circuit structure for ganging up function of bridge circuit - Google Patents
Realize the anti-circuit structure for ganging up function of bridge circuit Download PDFInfo
- Publication number
- CN109687738A CN109687738A CN201811632948.3A CN201811632948A CN109687738A CN 109687738 A CN109687738 A CN 109687738A CN 201811632948 A CN201811632948 A CN 201811632948A CN 109687738 A CN109687738 A CN 109687738A
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- CN
- China
- Prior art keywords
- effect tube
- bridge circuit
- field
- circuit
- pmos0
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M7/219—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
Abstract
The anti-circuit structure for ganging up function of bridge circuit, including bridge circuit module, the output for control circuit are realized the present invention relates to a kind of；AC regeneration access function circuit module is connected with the bridge circuit module, controls bridge circuit again for being fed back to the bridge circuit output variation.Using the anti-circuit structure for ganging up function of realization bridge circuit of the invention, avoid the problem of PMOS0 and NMOS0 are ganged up as caused by output variation coupling, no matter the switching speed of bridge circuit all can automatically carry out AC regeneration, the risk for avoiding bridge circuit from ganging up fastly or slowly.
Description
Technical field
The present invention relates to field of circuit control more particularly to bridge circuit control, in particular to a kind of realization bridge circuits
The anti-circuit structure for ganging up function.
Background technique
As shown in Figure 1, bridge circuit PMOS0 by open be switched to shutdown, NMOS0 is switched to unlatching by turning off when,
Output OUT quickly can become low level from high level, due to the grid (G) of PMOS0 and drain electrode (D) and the grid (G) of PMOS0
It is respectively CGDP and CGSP with each parasitic capacitor of source electrode (S), then CGDP and CGSP will will be after the variation of OUT partial pressure
It is applied on the grid (G) of PMOS0, PMOS0 bis- times conductings is easily caused in this way, so that PMOS0 and NMOS0 be caused to gang up；
Same bridge circuit NMOS0 by open be switched to shutdown, PMOS0 is switched to unlatching by turning off when, output OUT can quickly by
Low level becomes high level, due to the grid (G) of NMOS0 and drain electrode (D) and the grid (G) and source electrode (S) each parasitism of NMOS0
One capacitor is respectively CGDN and CGSN, then CGDN and CGSN will will be applied to the grid of NMOS0 after the variation partial pressure of OUT
On pole (G), NMOS0 bis- times conductings are easily caused in this way, so that PMOS0 and NMOS0 be caused to gang up；And this problem with
The raising of switching speed can be increasingly severe.Fig. 2 shows that ganging up each key node signal that moment (dash area) occurs becomes
Change.
Circuit structure of the invention just perfectly solves this problem, no matter bridge circuit switching speed it is fast or
Slowly AC regeneration, the risk for avoiding bridge circuit from ganging up all can automatically be carried out.
Summary of the invention
The purpose of the present invention is overcoming the above-mentioned prior art, provide a kind of at low cost, easy to operate, applicable
The anti-circuit structure for ganging up function of the relatively broad realization bridge circuit of range.
To achieve the goals above, the anti-circuit structure for ganging up function of realization bridge circuit of the invention is as follows:
The anti-circuit structure for ganging up function of the realization bridge circuit, is mainly characterized by, the circuit structure includes:
Bridge circuit module, the output for control circuit；
AC regeneration access function circuit module is connected, for the bridge-type with the bridge circuit module
Circuit output variation is fed back controls bridge circuit again.
Preferably, the bridge circuit module includes the first PMOS field-effect tube and the first NMOS field-effect tube, it is described
The first PMOS field-effect tube and the first NMOS field-effect tube be serially connected between power supply and ground.
Preferably, the AC regeneration channel module group includes:
First AC regeneration channel module is connected, for the bridge-type with the first PMOS field-effect tube
The variation of circuit module output is fed back；
Second AC regeneration channel module is connected, for the bridge-type with the first NMOS field-effect tube
The variation of circuit module output is fed back.
Preferably, the first AC regeneration channel module includes first capacitor, first resistor and the 2nd PMOS effects
Ying Guan；
The first capacitor and first resistor series connection is between power supply and the source electrode of the first PMOS field-effect tube；
The drain electrode of the 2nd PMOS field-effect tube and grid are connect respectively at the both ends of first resistor；
The source electrode of 2nd PMOS field-effect tube is connected with the source electrode of the first PMOS field-effect tube；
The first capacitor is used to lead to when the shutdown of the first PMOS field-effect tube and the first NMOS field-effect tube are opened
The variation for crossing CP coupling OUT, the grid of the 2nd PMOS field-effect tube is pulled down and is opened, to hold the first PMOS field-effect tube
Grid, gang up shape to avoid the secondary bridge circuit being unfolded into of the first PMOS field-effect tube as caused by output coupling
State.
Preferably, the second AC regeneration channel module includes the second capacitor, second resistance and the 2nd NMOS effects
Ying Guan；
Second capacitor and second resistance series connection is between ground and the drain electrode of the first NMOS field-effect tube；
The source electrode and grid of the 2nd NMOS field-effect tube are connect respectively at the both ends of second resistance；
The drain electrode of 2nd NMOS field-effect tube is connected with the source electrode of the 2nd PMOS field-effect tube；
Second capacitor is used to lead to when the first PMOS field-effect tube is opened and the first NMOS field-effect tube turns off
The variation for crossing CN coupling OUT, the grid of the 2nd NMOS field-effect tube is pulled up and is opened, to hold the first NMOS field-effect tube
Grid, gang up shape to avoid the secondary bridge circuit being unfolded into of the first NMOS field-effect tube as caused by output coupling
State.
Preferably, the bridge circuit module includes switch control unit, it is connected with the bridge circuit module
It connects, for controlling the switch of the first PMOS field-effect tube and the first NMOS field-effect tube in bridge-type circuit module.
Preferably, the first PMOS field-effect tube in the bridge circuit module and the first NMOS field-effect tube alternately at
In the state that is switched on and off, and the first PMOS field-effect tube is different with the state of the first NMOS field-effect tube.
Preferably, the circuit structure is by adjusting CP unit, the 2nd PMOS field-effect tube, CN unit and the 2nd NMOS
The parameter of field-effect tube adjusts feedback quantity.
Preferably, the circuit structure further includes the first clamp diode and the second clamp diode, described first
Clamp diode is connected with the 2nd PMOS field-effect tube, and second clamp diode is connected with the 2nd NMOS field-effect tube
It connects, the safety for the protective switch pipe in high-voltage applications.
Using the anti-circuit structure for ganging up function of realization bridge circuit of the invention, avoid PMOS0 and NMOS0 by
The problem of being ganged up caused by output variation coupling, no matter bridge circuit switching speed it is fast or all can automatically be handed over slowly
Stream feedback, the risk for avoiding bridge circuit from ganging up.
Detailed description of the invention
Fig. 1 is bridge circuit parasitic capacitance schematic diagram.
Fig. 2 is to couple output variation due to parasitic capacitance to cause to gang up each key node signal intensity figure that moment occurs.
Fig. 3 is the circuit structure diagram of the anti-circuit structure for ganging up function of realization bridge circuit of the invention.
Fig. 4 is that the circuit structure of the anti-circuit structure for ganging up function of realization bridge circuit of the invention and parasitic capacitance are shown
It is intended to.
Fig. 5 is the embodiment of the increase clamp diode of the anti-circuit structure for ganging up function of realization bridge circuit of the invention
Circuit diagram.
Appended drawing reference:
The first PMOS field-effect tube of PMOS0
The first NMOS field-effect tube of NMOS0
CP first capacitor
RP first resistor
The 2nd PMOS field-effect tube of PMOS1
The second capacitor of CN
RN second resistance
The 2nd NMOS field-effect tube of NMOS1
Specific embodiment
It is further to carry out combined with specific embodiments below in order to more clearly describe technology contents of the invention
Description.
The anti-circuit structure for ganging up function of the realization bridge circuit, wherein the circuit structure includes:
Bridge circuit module, the output for control circuit；
AC regeneration access function circuit module is connected, for the bridge-type with the bridge circuit module
Circuit output variation is fed back controls bridge circuit again.
As the preferred embodiment of the present invention, the bridge circuit module includes the first PMOS field-effect tube PMOS0
It is gone here and there with the first NMOS field-effect tube NMOS0, the first PMOS field-effect tube PMOS0 and the first NMOS field-effect tube NMOS0
It connects between power supply and ground.
As the preferred embodiment of the present invention, the AC regeneration channel module group includes:
First AC regeneration channel module is connected, for described with the first PMOS field-effect tube PMOS0
The variation of bridge circuit module output is fed back；
Second AC regeneration channel module is connected, for described with the first NMOS field-effect tube NMOS0
The variation of bridge circuit module output is fed back.
As the preferred embodiment of the present invention, the first AC regeneration channel module includes first capacitor CP,
One resistance RP and the 2nd PMOS field-effect tube PMOS1；
Source electrode of the first capacitor CP and first resistor RP series connection in power supply and the first PMOS field-effect tube PMOS0
Between；
The drain electrode of the 2nd PMOS field-effect tube PMOS1 and grid are connect respectively at the both ends of first resistor RP；
The source electrode of 2nd PMOS field-effect tube PMOS1 is connected with the source electrode of the first PMOS field-effect tube PMOS0；
The first capacitor CP is used in the first PMOS field-effect tube PMOS0 shutdown and the first NMOS field-effect tube
When NMOS0 is opened, the variation of OUT is coupled by CP, the grid of the 2nd PMOS field-effect tube PMOS1 is pulled down and opened, thus
The grid of the first PMOS field-effect tube PMOS0 is held, to avoid the first PMOS field-effect tube PMOS0 as caused by output coupling
The secondary bridge circuit being unfolded into gangs up state, to prevent bridge circuit from ganging up problem.
As the preferred embodiment of the present invention, the second AC regeneration channel module includes the second capacitor CN, the
Two resistance RN and the 2nd NMOS field-effect tube NMOS1；
The second capacitor CN and second resistance RN series connection ground and the first NMOS field-effect tube NMOS0 drain electrode it
Between；
The source electrode and grid of the 2nd NMOS field-effect tube NMOS1 is connect respectively at the both ends of second resistance RN；
The drain electrode of 2nd NMOS field-effect tube NMOS1 is connected with the source electrode of the 2nd PMOS field-effect tube PMOS0；
The second capacitor CN is used to open in the first PMOS field-effect tube PMOS0 and the first NMOS field-effect tube
When NMOS0 is turned off, the variation of OUT is coupled by CN, the grid of the 2nd NMOS field-effect tube NMOS1 is pulled up and opened, thus
The grid of the first NMOS field-effect tube NMOS0 is held, to avoid the first NMOS field-effect tube NMOS0 as caused by output coupling
The secondary bridge circuit being unfolded into gangs up state, to prevent bridge circuit from ganging up problem.
As the preferred embodiment of the present invention, the bridge circuit module includes switch control unit, and described
Bridge circuit module is connected, for controlling in bridge-type circuit module the first PMOS field-effect tube PMOS0 and the first NMOS
The switch of effect pipe NMOS0.
The first PMOS field-effect tube PMOS0 as the preferred embodiment of the present invention, in the bridge circuit module
The state of being switched on and off, and the first PMOS field-effect tube PMOS0 and first are alternately in the first NMOS field-effect tube NMOS0
The state of NMOS field-effect tube NMOS0 is different.
As the preferred embodiment of the present invention, the circuit structure is by adjusting CP unit, the 2nd PMOS field-effect
The parameter of pipe PMOS1, CN unit and the 2nd NMOS field-effect tube NMOS1 adjusts feedback quantity.
As the preferred embodiment of the present invention, the circuit structure further includes the first clamp diode and the second clamper
Diode, first clamp diode are connected with the 2nd PMOS field-effect tube PMOS1, second clamp diode
It is connected with the 2nd NMOS field-effect tube NMOS1, the safety for the protective switch pipe in high-voltage applications.
In a specific embodiment of the invention, a kind of anti-circuit structure ganged up of bridge circuit is disclosed.Electricity of the invention
Line structure includes bridge circuit and changes the AC regeneration access fed back using bridge circuit output.
Wherein bridge circuit refers in particular to the structure of PMOS+NMOS；The friendship wherein fed back using bridge circuit output variation
The feedback quantity of stream feedback network is to bridge circuit output rate of change at relevant.Bridge circuit PMOS turns off what NMOS was opened
Moment, feedback network, which starts to act on, holds the grid G of PMOS, prevents PMOS secondary opening from bridge circuit being caused to gang up；Bridge-type
Circuit NMOS turns off the moment that PMOS is opened, and feedback network, which starts to act on, holds the grid G of NMOS, prevents NMOS secondary opening
Bridge circuit is caused to gang up.
As shown in figure 4, the present invention to bridge circuit by introducing from output end OUT to the friendship of bridge circuit switch control terminal
Stream feedback network avoids bridge circuit from ganging up in high-speed switch, to achieve the goals above separately designed by CP,
The AC regeneration control loop of RP, PMOS1 composition and the AC regeneration control loop being made of CN, RN, NMOS1.
Working principle is described below:
When PMOS0 is converted into shutdown by opening, NMOS0 by turn off be converted into unlatching when, OUT can quickly be become by high level
Low level, the CGSP and CGDP of PMOS0 parasitism can pull down GP at this time, at the same time, inside AC regeneration control loop
CP also can by the grid G of PMOS1 toward drop-down, to open PMOS1, such PMOS1 will charge to GP, thus keep GP not under
Fall or only exist it is micro under fall, avoid PMOS0 and NMOS0 gangs up generation；
Similarly, when NMOS0 is converted into shutdown by opening, PMOS0 by turn off be converted into unlatching when, OUT can be by low level
Level quickly is got higher, the CGSN and CGDN of NMOS0 parasitism can pull up GN at this time, at the same time, AC regeneration control loop
The CN of the inside also can be by the grid G of NMOS1 toward pull-up, to open NMOS1, such NMOS1 will discharge to GN, to keep
GN does not rise or only exists micro rising, and avoid PMOS0 and NMOS0 gangs up generation；
During PMOS0 and NMOS0 alternation switch, GP and GN change faster, the relative feedback amount of feedback network
It is bigger, it is ensured that not ganged up in PMOS0 and NMOS0 when high speed or low speed switch；
In actual circuit can adjustment CP, PMOS1 and CN appropriate, NMOS1 parameter adjust feedback quantity, in order to protect
The safety for protecting switching tube can increase a clamp diode such as Fig. 5 institute at the end GS of PMOS1 and NMOS1 in high-voltage applications
Show.
Using the anti-circuit structure for ganging up function of realization bridge circuit of the invention, avoid PMOS0 and NMOS0 by
The problem of being ganged up caused by output variation coupling, no matter bridge circuit switching speed it is fast or all can automatically be handed over slowly
Stream feedback, the risk for avoiding bridge circuit from ganging up.
In this description, the present invention is described with reference to its specific embodiment.But it is clear that can still make
Various modifications and alterations are without departing from the spirit and scope of the invention.Therefore, the description and the appended drawings should be considered as illustrative
And not restrictive.
Claims (9)
1. a kind of realize the anti-circuit structure for ganging up function of bridge circuit, which is characterized in that the circuit structure includes:
Bridge circuit module, the output for control circuit；
AC regeneration access function circuit module is connected, for the bridge circuit with the bridge circuit module
Output variation is fed back controls bridge circuit again.
2. according to claim 1 realize the anti-circuit structure for ganging up function of bridge circuit, which is characterized in that the bridge
Formula circuit module includes the first PMOS field-effect tube (PMOS0) and the first NMOS field-effect tube (NMOS0), the first PMOS
Field-effect tube (PMOS0) and the first NMOS field-effect tube (NMOS0) are serially connected between power supply and ground.
3. according to claim 2 realize the anti-circuit structure for ganging up function of bridge circuit, which is characterized in that the friendship
Flowing feedback network module group includes:
First AC regeneration channel module is connected, for the bridge with the first PMOS field-effect tube (PMOS0)
The variation of formula circuit module output is fed back controls bridge circuit again；
Second AC regeneration channel module is connected, for the bridge with the first NMOS field-effect tube (NMOS0)
The variation of formula circuit module output is fed back controls bridge circuit again.
4. according to claim 1 realize the anti-circuit structure for ganging up function of bridge circuit, which is characterized in that described the
One AC regeneration channel module includes first capacitor (CP), first resistor (RP) and the 2nd PMOS field-effect tube (PMOS1)；
The first capacitor (CP) and first resistor (RP) series connection is in the source of power supply and the first PMOS field-effect tube (PMOS0)
Between pole；
The drain electrode of the 2nd PMOS field-effect tube (PMOS1) and grid are connect respectively at the both ends of first resistor (RP)；
The source electrode of 2nd PMOS field-effect tube (PMOS1) is connected with the source electrode of the first PMOS field-effect tube (PMOS0)；
The first capacitor (CP) is used in the shutdown of the first PMOS field-effect tube (PMOS0) and the first NMOS field-effect tube
(NMOS0) when opening, the variation of OUT is coupled by CP, the grid of the 2nd PMOS field-effect tube (PMOS1) is pulled down and opened,
To hold the grid of the first PMOS field-effect tube (PMOS0), to avoid the first PMOS field-effect as caused by output coupling
Pipe (PMOS0) secondary bridge circuit being unfolded into gangs up state.
5. according to claim 1 realize the anti-circuit structure for ganging up function of bridge circuit, which is characterized in that described the
Two AC regeneration channel modules include the second capacitor (CN), second resistance (RN) and the 2nd NMOS field-effect tube (NMOS1)；
Drain electrode of second capacitor (CN) and second resistance (RN) series connection on ground and the first NMOS field-effect tube (NMOS0)
Between；
The source electrode and grid of the 2nd NMOS field-effect tube (NMOS1) are connect respectively at the both ends of second resistance (RN)；
The drain electrode of 2nd NMOS field-effect tube (NMOS1) is connected with the source electrode of the 2nd PMOS field-effect tube (PMOS0)；
Second capacitor (CN) is used to open in the first PMOS field-effect tube (PMOS0) and the first NMOS field-effect tube
(NMOS0) when turning off, the variation of OUT is coupled by CN, the grid of the 2nd NMOS field-effect tube (NMOS1) is pulled up and opened,
To hold the grid of the first NMOS field-effect tube (NMOS0), to avoid the first NMOS field-effect as caused by output coupling
Pipe (NMOS0) secondary bridge circuit being unfolded into gangs up state.
6. according to claim 2 realize the anti-circuit structure for ganging up function of bridge circuit, which is characterized in that the bridge
Formula circuit module includes switch control unit, is connected with the bridge circuit module, for controlling bridge-type circuit module
In the first PMOS field-effect tube (PMOS0) and the first NMOS field-effect tube (NMOS0) switch.
7. according to claim 2 realize the anti-circuit structure for ganging up function of bridge circuit, which is characterized in that the bridge
The first PMOS field-effect tube (PMOS0) in formula circuit module and the first NMOS field-effect tube (NMOS0) alternately in opening and
Off state, and the first PMOS field-effect tube (PMOS0) is different with the state of the first NMOS field-effect tube (NMOS0).
8. the anti-circuit structure for ganging up function of realization bridge circuit according to claim 4 and 5, which is characterized in that institute
The circuit structure stated is by adjusting CP unit, the 2nd PMOS field-effect tube (PMOS1), CN unit and the 2nd NMOS field-effect tube
(NMOS1) parameter adjusts feedback quantity.
9. according to claim 1 realize the anti-circuit structure for ganging up function of bridge circuit, which is characterized in that the electricity
Line structure further includes the first clamp diode and the second clamp diode, first clamp diode and the 2nd PMOS effects
(PMOS1) should be managed to be connected, second clamp diode is connected with the 2nd NMOS field-effect tube (NMOS1), is used for
The safety of protective switch pipe when high-voltage applications.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811632948.3A CN109687738B (en) | 2018-12-29 | 2018-12-29 | Circuit structure for realizing series connection prevention function of bridge circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811632948.3A CN109687738B (en) | 2018-12-29 | 2018-12-29 | Circuit structure for realizing series connection prevention function of bridge circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109687738A true CN109687738A (en) | 2019-04-26 |
| CN109687738B CN109687738B (en) | 2020-12-18 |
Family
ID=66191051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811632948.3A Active CN109687738B (en) | 2018-12-29 | 2018-12-29 | Circuit structure for realizing series connection prevention function of bridge circuit |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4970620A (en) * | 1989-08-23 | 1990-11-13 | General Motors Corporation | FET bridge protection circuit |
| US6832327B1 (en) * | 2001-10-02 | 2004-12-14 | Advanced Micro Devices, Inc. | Apparatus and method for providing an external clock from a circuit in sleep mode in a processor-based system |
| CN201118500Y (en) * | 2007-11-06 | 2008-09-17 | 黄瑞益 | Single-phase drive control circuit for DC brushless fan |
| CN201438776U (en) * | 2009-04-16 | 2010-04-14 | 永磁电子（东莞）有限公司 | High-frequency generator circuit of electrodeless lamp |
| CN103441748A (en) * | 2013-07-21 | 2013-12-11 | 马东林 | Transistored bridge |
| CN105375750A (en) * | 2015-12-17 | 2016-03-02 | 南京工程学院 | Driving protection circuit for preventing bridge arm direct connection |
| CN106160447A (en) * | 2016-07-08 | 2016-11-23 | 南京航空航天大学 | A kind of Dead Time optimal control method being applicable to SiC base brachium pontis power circuit |
-
2018
- 2018-12-29 CN CN201811632948.3A patent/CN109687738B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4970620A (en) * | 1989-08-23 | 1990-11-13 | General Motors Corporation | FET bridge protection circuit |
| US6832327B1 (en) * | 2001-10-02 | 2004-12-14 | Advanced Micro Devices, Inc. | Apparatus and method for providing an external clock from a circuit in sleep mode in a processor-based system |
| CN201118500Y (en) * | 2007-11-06 | 2008-09-17 | 黄瑞益 | Single-phase drive control circuit for DC brushless fan |
| CN201438776U (en) * | 2009-04-16 | 2010-04-14 | 永磁电子（东莞）有限公司 | High-frequency generator circuit of electrodeless lamp |
| CN103441748A (en) * | 2013-07-21 | 2013-12-11 | 马东林 | Transistored bridge |
| CN105375750A (en) * | 2015-12-17 | 2016-03-02 | 南京工程学院 | Driving protection circuit for preventing bridge arm direct connection |
| CN106160447A (en) * | 2016-07-08 | 2016-11-23 | 南京航空航天大学 | A kind of Dead Time optimal control method being applicable to SiC base brachium pontis power circuit |
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| Publication number | Publication date |
|---|---|
| CN109687738B (en) | 2020-12-18 |
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