CN109666888A - Vacuum plant, evaporation coating device and gate valve - Google Patents
Vacuum plant, evaporation coating device and gate valve Download PDFInfo
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- CN109666888A CN109666888A CN201810616374.4A CN201810616374A CN109666888A CN 109666888 A CN109666888 A CN 109666888A CN 201810616374 A CN201810616374 A CN 201810616374A CN 109666888 A CN109666888 A CN 109666888A
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
- F04B37/00—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00
- F04B37/06—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for evacuating by thermal means
- F04B37/08—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for evacuating by thermal means by condensing or freezing, e.g. cryogenic pumps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
- F04B39/00—Component parts, details, or accessories, of pumps or pumping systems specially adapted for elastic fluids, not otherwise provided for in, or of interest apart from, groups F04B25/00 - F04B37/00
- F04B39/10—Adaptations or arrangements of distribution members
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Details Of Valves (AREA)
- Electroluminescent Light Sources (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention provides a kind of vacuum plant that can effectively inhibit gate valve moisture condensation.Using a kind of vacuum plant, which includes the chamber that inner space is reduced atmosphere；And the gate valve for separating the inner space of chamber and exterior space, vacuum plant is characterized in that, chamber includes the first chamber wall with opening, gate valve is arranged in a manner of covering opening, along the direction opening and closing intersected with first chamber wall, first face of gate valve and temperature it is higher than gate valve first component it is opposite, the second component that the second face of gate valve is lower than gate valve with temperature is opposite, and the radiance in the first face is higher than the radiance in the second face.
Description
Technical field
The present invention relates to vacuum plant, evaporation coating device and gate valves.
Background technique
In the vacuum plant for the manufacturing process for carrying out display panel or semiconductor, electronic component etc. that electronic equipment uses
In, it is pumped using by the vacuum evacuation for being formed as reduced atmosphere in vacuum plant.In the vacuum plant for requiring high vacuum state, point
It opens using the vacuum evacuation pump depressurized since atmospheric pressure and starts with low temperature shape from a degree of state has been depressurized
Vacuum evacuation as high vacuum state pumps.
The exterior thereto side of gate valve is set to using the vacuum evacuation pump of low temperature, which is configured to be arranged and constitute
Opening occlusion at the chamber of vacuum plant, the opening and closing of the vacuum evacuation pump and gate valve cooperatively control the exhaust of atmosphere (specially
Sharp document 1).
[citation]
[patent document]
[patent document 1] International Publication No. 2010/038416
Summary of the invention
[subject to be solved by the invention]
In conventional structure, it is pumped due to being configured in gate valve side using the vacuum evacuation of low temperature, gate valve passes through spoke
It penetrates cooling and becomes low temperature.Therefore, when to atmosphere opening is carried out in chamber, the case where there are gate valve moisture condensation.
It is an object of the invention to provide one in the vacuum plant that gate valve side is configured with using the vacuum evacuation pump of low temperature
Kind can effectively inhibit the vacuum plant of the moisture condensation of gate valve.
[solution for solving the problem]
For above-mentioned purpose, the present invention uses structure below.That is,
A kind of vacuum plant, comprising:
Inner space is the chamber of reduced atmosphere；And
The gate valve that the inner space of the chamber and exterior space are separated,
The vacuum plant is characterized in that,
The chamber includes the first chamber wall with opening,
The gate valve is arranged in a manner of covering the opening, is opened and closed along the direction intersected with the first chamber wall,
First face of the gate valve and temperature it is higher than the gate valve first component it is opposite,
Second face of the gate valve second component lower than the gate valve with temperature is opposite,
The radiance in first face is higher than the radiance in second face.
The present invention also uses structure below.That is,
A kind of vacuum plant, comprising:
Inner space is the chamber of reduced atmosphere；And
The gate valve that the inner space of the chamber and exterior space are separated,
The vacuum plant is characterized in that,
The chamber includes the first chamber wall and the second chamber wall opposite with the first chamber wall with opening,
The gate valve is arranged in a manner of covering the opening, is opened and closed along the direction intersected with the first chamber wall,
First face of the gate valve and the second chamber wall are opposite,
Second face of the gate valve and cryogenic pump or cryotrap are opposite,
The radiance in first face is higher than the radiance in second face.
The present invention also uses structure below.That is,
A kind of vacuum plant, comprising:
Inner space is the chamber of reduced atmosphere；And
The gate valve that the inner space of the chamber and exterior space are separated,
The vacuum plant is characterized in that,
The chamber has first chamber wall, and the first chamber wall has opening,
The gate valve is arranged in a manner of covering the opening, is opened and closed along the direction intersected with the first chamber wall,
The vacuum plant has the heat preservation mechanism for declining the heat dissipation capacity of the gate valve.
The present invention also uses structure below.That is,
A kind of vacuum plant, comprising:
Inner space is the chamber of reduced atmosphere；And
The gate valve that the inner space of the chamber and exterior space are separated,
The vacuum plant is characterized in that,
The chamber has first chamber wall, and the first chamber wall has opening,
The gate valve is arranged in a manner of covering the opening, is opened and closed along the direction intersected with the first chamber wall,
The vacuum plant includes
For making the supporting device of the gate valve driving；And
Supply the heat supply mechanism of heat to the gate valve by heat transfer with the path different from the supporting device.
The present invention also uses structure below.That is,
A kind of gate valve is arranged in a manner of covering opening, is opened and closed along the direction intersected with the wall for forming the opening,
It is characterized in that,
The radiance in the first face is higher than the radiance in the second face,
Reflecting plate is equipped in the second face.
[invention effect]
In accordance with the invention it is possible to effectively inhibit gate valve moisture condensation.
Detailed description of the invention
Fig. 1 is the schematical cross-sectional view of vacuum plant.
Fig. 2 is the coordinate diagram of gate valve temperature change.
Fig. 3 is the schematic diagram of the vacuum plant of embodiment 1.
Fig. 4 is the schematic diagram of the vacuum plant of embodiment 2.
Fig. 5 is the schematic diagram of the vacuum plant of embodiment 3.
Fig. 6 is the schematic diagram of the vacuum plant of embodiment 4.
Fig. 7 is another schematic diagram of the vacuum plant of embodiment 4.
Fig. 8 is the schematic diagram of the vacuum plant of embodiment 5.
Fig. 9 is the explanatory diagram of organic EL display device.
[description of symbols]
200: chamber, 404: first chamber wall, 405: second chamber wall (first component), 402: cryogenic pump (the second structure
Part), 501: gate valve, the 501 (a): the first face, the 501 (b): the second face
Specific embodiment
Hereinafter, mode for carrying out the present invention is illustratively described in detail based on embodiment referring to attached drawing.But
The size of structure member that the embodiment is recorded, material, shape these relative configurations etc. should be according to the devices for being applicable in invention
Structure or various conditions are suitably changed.That is, not limiting the scope of the present invention to the following embodiments and the accompanying drawings.
[embodiment 1]
<outline structure of vacuum plant>
Fig. 1 (a) is the schematic diagram for indicating the structure of vacuum plant.Vacuum plant has chamber 200.The inside of chamber 200
It is maintained reduced atmosphere.In the present embodiment, the example that evaporation source is configured with inside chamber 200 is described, but can
Exposure device or sputtering equipment etc. are configured with the equipment according to production.
Chamber 200 includes the first chamber wall 404 and second chamber wall 405 for constituting chamber 200.First chamber wall 404 has
There is opening, and is provided with gate valve 401 in a manner of covering opening.Gate valve 401 and the supporting device for driving gate valve 401
403 connections.Gate valve have and being opened and closed along the direction that intersects with first chamber wall 404 by the inner space of chamber 200 with
The function that exterior space separates.In Fig. 1 (a), gate valve is opened and closed along the direction orthogonal with first chamber wall 404.
Supporting device 403 is connected to by the opening in the setting of second chamber wall 405 opposite with first chamber wall 404
In the driving mechanism 407 of the exterior arrangement of chamber 200.Driving mechanism 407 is by configuring the working cylinder in driving mechanism 407
(not shown) drives supporting device 403.Second chamber wall 405 be arranged opening by be connected to supporting device 403
The connection of bellows 406 and the inner space of chamber and exterior space are separated.
The connection of gate valve 401 and supporting device 403 is shape shown in Fig. 1 (b).Gate valve 401 includes connecting with supporting device
The interconnecting piece 401 (a) and sealing part 401 (b) connect.Supporting device 403 includes: the first area 403 (a) connecting with bellows；
The second area 403 (b) being connect with interconnecting piece 401 (a)；In the case where gate valve 401 is in off state with sealing part 401 (b)
The third region 403 (c) of contact.Second area 403 (b) is formed as path compared with the third region 403 (c) of contact.In lock
In the case that valve 401 is in an open state, interconnecting piece 401 (a) contacts with third region 403 (c) and lifts gate valve 401.In lock
In the case that valve 401 is in off state, third region 403 (c) contacts with sealing part 401 (b) and is pressed into sealing part 401 (b),
Thus gate valve 401 is close to first chamber wall 404 and is fixed.Third region 403 (c) contacted with sealing part 401 (b) connect
Contacting surface is formed by spherical surface, even if can also be pressed into and be close to first chamber wall 404 in the case where gate valve 401 is arranged obliquely
And it fixes.
Cryogenic pump 402 configures the outer side in chamber 200 in a manner of covering the opening that first chamber wall 404 has.Chamber
Decompression state to a certain degree is become by vacuum pump (not shown) depressurized since atmospheric pressure inside room 200.Then, it drives
Mechanism 407 keeps supporting device 403 mobile to the outside direction of chamber 200, and gate valve 401 is thus made to become opening state.Chamber 200
Inside becomes high vacuum state and cryogenic pump 402 operated.What as long as cryogenic pump 402 was exhausted using low temperature
Vacuum evacuation pump, can be include cryotrap vacuum evacuation pump.
Become after providing low pressure than certain inside chamber 200, as by the substrate 10 of vapor deposition body by conveyer
Device people (not shown) is to transmitting inside chamber 200.Substrate 10 is protected by the substrate holding unit being arranged in chamber 200 is (not shown)
It holds.In film forming, substrate 10 is placed in 220 upper surface of mask.Mask 220 is with the Thinfilm pattern with formation on the substrate 10
The metal mask of corresponding patterns of openings 221, is arranged in inside chamber 200 with being parallel to the horizontal plane.Substrate 10 is protected by substrate
It holds unit and is placed in the upper surface of mask 220, thus set in the form of being parallel to the horizontal plane and lower surface is covered by mask 220
It is placed in inside chamber 200.
The lower section of mask 220 inside chamber 200 is equipped with evaporation source 300.Evaporation source 300 generally has
It is standby: to accommodate the evaporation source container (crucible) 301 (hereinafter referred to as container 301) of evaporation material；And to being contained in container 301
The heater 302 as heating mechanism that evaporation material is heated.Evaporation material in container 301 passes through heater 302
It heats and is evaporated in container 301, sprayed via the nozzle 303 for being set to 301 top of container to outside container 301.It is ejected into appearance
Evaporation material outside device 301 is with the patterns of openings 221 being arranged in mask 220 correspondingly in the base being set to above device 300
Film is formed on the surface of plate 10.Moreover, anti-adhesion plate 231 is equipped with, to avoid the evaporation material of container 301 is contained in vapor deposition
It is attached to main valve 401, supporting device 403, bellows 406 etc..
In addition to this, although diagram is omitted, also have sometimes in evaporation source 300 for improving heater 302
Heating efficiency reflector or heat transfer member, each structure of the evaporation source 300 comprising them integrally accommodated
Framework, baffle, evaporation rate monitor etc..Moreover, evaporation source 300 has in order to equably form a film to substrate 10 is whole
When in 200 Inner Constitution of chamber be that can be relatively moved relative to the substrate 10 of fixed mounting.It should be noted that also by vacuum
Device and evaporation source are collectively referred to as evaporation coating device.
After vapor deposition, substrate 10 is separated by substrate holding unit from 220 upper surface of mask, by transfer robot
It is transmitted outside to chamber 200.Then, next substrate 10 is transmitted to 200 inside of chamber by transfer robot and vapor deposition is repeated
Process.During vapor deposition process is repeated, gate valve 401 is in an open state, and in order to keep high vacuum, consecutive low temperature is pumped always
The state of 402 operatings.
In the case where stopping vacuum plant due to maintenance etc., in the state that cryogenic pump 402 still operates, make gate valve
401 become closed state.From the ventilation for being set to chamber 200 with inflow atmosphere or nitrogen etc. (not shown) is managed, thus make chamber
Pressure inside 200 becomes atmospheric pressure state.
<the reason of temperature decline of gate valve>
Fig. 2 (a) is the figure for illustrating the reason of temperature of gate valve declines, and is the lock in the structure for indicate previous gate valve
The coordinate diagram of the relationship of the movement of the temperature change and cryogenic pump of valve.Fig. 2 (b), Fig. 2 (c) are the movements pair indicated with cryogenic pump
The figure of the position for the gate valve answered.
In Fig. 2 (a), solid line indicates the temperature change of gate valve, and dotted line indicates the temperature change of the chamber near gate valve.It sits
(A) of lower part of marking on a map shows the indoor pressure state of chamber, shows the state of atmospheric pressure and decompression.(B) shows lock for coordinate diagram lower part
The opening state and closed state of valve.Fig. 2 (b) shows the positional relationship of the gate valve that gate valve is in an open state and chamber, cryogenic pump
Schematic diagram, Fig. 2 (c) shows the schematic diagram of the positional relationship of gate valve that gate valve is in off state and chamber, cryogenic pump.Such as Fig. 2
(a) it is found that the temperature of gate valve is not influenced by the indoor pressure of chamber shown in, but changed by the opening and closing of gate valve.It is specific and
Speech, it is known that in the case where gate valve is opened, temperature decline, in the case where closing, temperature rises.According to the above, gate valve
In the case where directly being contacted with chamber, risen by heat transfer and temperature is carried out from chamber.However, gate valve and chamber not in contact with
Opening when, heat transfer decline.Thus, it can be known that the structure for needing to avoid temperature from declining when gate valve is opened.
<detailed construction of gate valve>
Fig. 3 be the structure in order to illustrate the gate valve 501 of the present embodiment and show in vacuum plant 200 with exhaust system phase
The schematic sectional view of associated structural element.For the structure general with Fig. 1, same reference numerals are marked, and simplify explanation.?
In the gate valve 501 of the present embodiment, with the first face 501 (a) of second chamber wall 405 in opposite directions by fluororesin come coating, with low temperature
The second opposite face 501 (b) of pump 402 makes to form the exposing of the stainless steel of gate valve 501.
By being set as above structure, become the radiance in the first face 501 (a) knot higher than the radiance in the second face 501 (b)
Structure.The face of high radiant rate is formed, by the second chamber wall 405 higher than gate valve 501 relative to temperature as a result, so as to effective
Ground is assembled by the radiant heat of second chamber wall 405 to gate valve 501.Moreover, passing through the cryogenic pump lower than gate valve 501 relative to temperature
402 form the face of low-E, so as to reduce from gate valve 501 to the radiant heat of cryogenic pump 402.
As long as the first face 501 (a) radiance is than the second face 501 (b) height.Moreover, the radiance in the first face 501 (a)
Preferably 0.8 or more.The specific material for being used to form the first face 501 (a) is not only fluor resin coating, or chromaking is closed
Plating, alumite processing of object etc..
As long as the second face 501 (b) radiance is lower than the first face 501 (a).Moreover, the radiance in the second face 501 (b)
Preferably 0.4 or less.The specific material in the second face 501 (b) is not only stainless steel, or aluminium etc..Moreover, the first face
501 (a) opposite components are not limited to second chamber wall 405, as long as the structure higher than gate valve 501 with temperature is opposite,
It can be the device for the processing being arranged in vacuum plant.
In addition, second chamber wall 405 is by being set to height, Neng Gougao for the radiance in the face opposite with the first face 501 (a)
Effect ground promotes the temperature in the first face 501 (a).The radiance in the face opposite with the first face 501 (a) of second chamber wall 405 is preferred
It is 0.4 or more.The specific material for being used to form the face opposite with the first face 501 (a) of second chamber wall 405 can enumerate fluorine tree
Rouge coating, the plating of chromium compound, alumite processing etc..
[embodiment 2]
In the present embodiment, it shows and is equipped with the reflecting plate 502 as heat preservation mechanism for declining the heat dissipation capacity of gate valve 401
Structure.For the structure general with other embodiments, identical appended drawing reference is marked, and simplifies explanation.For general with Fig. 1
Structure, mark same reference numerals, and simplify explanation.Heat preservation mechanism is set to the face of gate valve 401, is configured at temperature and compares gate valve
Between 401 low structures and gate valve 401.In Fig. 4 (a), in low lower than gate valve 401 of face and the temperature of a side of gate valve 401
The reflecting plate 502 as heat preservation mechanism is equipped between temperature pump 402.By being set as above structure, can reduce from gate valve 401 to temperature
Spend the heat dissipation capacity of the cryogenic pump 402 lower than gate valve 401.
Shown in the detailed construction of reflecting plate 502 such as Fig. 4 (b).Reflecting plate 502 is from from gate valve 401 to the direction of cryogenic pump 402
The reflecting plate 502 (a) overlapped~502 (c) are constituted.In reflecting plate 502 (a)~fixation of 502 (c) relative to gate valve 401
It is middle to use screw 503 (a)~503 (f).Reflecting plate 502 (a)~502 (c) more overlap multiple, can more expect effect
It improves, number is not limited to this.
Gate valve 401 and reflecting plate 502 (a)~502 (c) are equipped with to be configured with gap.Therefore, become vacuum in chamber 200
In the case where transmitted to the heat from gate valve 401 is radiant heat and screw 503 (a)~(f), therefore can be as far as possible
Reduce heat dissipation capacity.Moreover, the number for the component that screw 503 (a)~(f) is fixed by a screw is limited to 2.That is, not
It is that gate valve 401 and reflecting plate 503 (a)~503 (c) are penetrated through by a screw all.Become as a result, and avoids from gate valve 401
Heat be transmitted to screw and the structure directly released to 402 side of cryogenic pump.
[embodiment 3]
In the present embodiment, the rotating mechanism as heat preservation mechanism for being equipped with and declining the heat dissipation capacity of gate valve 401 is shown
503, the structure of auxiliary body 504 is rotated.In Fig. 5 (a), (b), it is set as through the rotating mechanism 503 as heat preservation mechanism, rotation
Turning auxiliary body 504 makes the inclined structure of gate valve 401.Thereby, it is possible to reduce the area of the gate valve 401 opposite with cryogenic pump 402,
Reduce the heat dissipation capacity to the lower cryogenic pump 402 of temperature.
Gate valve 401 is connected to supporting device 403 via rotating mechanism 503, and gate valve 401 becomes relative to supporting device
403 and freely change the mechanism of direction.The side etc. of chamber 200 is fixed in rotation auxiliary body 504.Gate valve 401 is by supporting
Mechanism 403 is lifted, and the face opposite with second chamber wall 405 of gate valve 401 is contacted with rotation auxiliary body 504.Also, pass through by
Gate valve 401 higher lifts and gate valve 401 is made to tilt (Fig. 5 (b)).The area of the gate valve 401 opposite with cryogenic pump 402 as a result,
Reduce, declines to the heat dissipation capacity of cryogenic pump 402.Moreover, gate valve 401 and temperature is higher than gate valve 401 and second chamber wall 405
The opposite area of other chamber walls of same temperature increases.Thereby, it is possible to further increase the temperature of gate valve 401.
In addition, rotation auxiliary body 504 also can be set to the structure of fever.As a result, when being contacted with gate valve 401, transmitting
Carry out the heat of spinning auxiliary body 504 and can be improved the temperature of gate valve 401.
[embodiment 4]
In the present embodiment, equipped with the path different from supporting device 403 by heat transfer to gate valve 401 supply heat
Heat supply mechanism.About the structure general with other embodiments, same reference numerals are marked, and simplify explanation.
In Fig. 6, it is equipped with heat supply mechanism 601 in second chamber wall 405, becomes the heat supply mechanism 601 when gate valve 401 is opened
Connect with gate valve 401, the structure isolated with heat supply mechanism 601 when gate valve 401 is closed.As heat supply mechanism 601, using by heat
Conduct the block of the formation such as high aluminium.
In Fig. 7, space made of setting is divided by inner space of the bellows 602 to chamber 200 is divided
Space connect with gate valve.It is flowed into the fluids such as atmosphere i.e. heat supply mechanism 603 in divided space, is transmitted to gate valve 401
Heat.
The heat supply mechanism of the present embodiment is arranged in the path different from supporting device 403.By being set as such structure, i.e.,
Make also can in the case where the contact area that the structure of supporting device 403 is contacted as shown in Fig. 1 (b) with gate valve 401 is small
Heat is supplied to gate valve 401.
[embodiment 5]
Respective structure can be combined with each other by the various embodiments described above as much as possible.Fig. 8 is its an example.In the present embodiment
In, gate valve 501 becomes the structure with the first face 501 (a) and the second face 501 (b).Make dissipating for gate valve 501 moreover, becoming and being equipped with
The structure of the reflecting plate 502 as heat preservation mechanism of heat decline.By becoming above structure, gate valve can be more effectively improved
501 temperature.For the structure general with other embodiments, same reference numerals are marked, are not said especially in the present embodiment
Bright item is same as the previously described embodiments.
[embodiment 6]
<concrete example of the manufacturing method of organic electronic device>
The vacuum plant of the various embodiments described above is used in the concrete example when manufacture of organic electronic device as implementation
Example 6 is illustrated.Hereinafter, as organic electronic device example and illustrate the structure and manufacturing method of organic EL display device.
Firstly, the organic EL display device to manufacture is illustrated.Fig. 9 (a) is the overall diagram of organic EL display device 60, Fig. 9 (b) table
Show the cross-sectional configuration of 1 pixel.
As shown in Fig. 9 (a), in the display area of organic EL display device 60 61, has the pixel 62 of a plurality of light-emitting elements
It configures in a matrix form multiple.Light-emitting component is respectively provided with the construction for having the organic layer by a pair of electrodes clamping, and details are rear
Literary explanation.It should be noted that pixel said here refers to can show desired color most in display area 61
Subsection.In the case where the organic EL display device of the present embodiment, by showing mutually different the first luminous luminous member
The combination of part 62R, the second light-emitting component 62G, third light-emitting component 62B constitute pixel 62.62 multi-pass of pixel crosses emitting red light
The combination of element, green luminousing element, blue light emitting device is constituted but it is also possible to be yellow emitting light elements, the luminous member of dark green
The combination of part, white-light luminescent component, as long as being not particularly limited to be more than at least one kind of color.
Fig. 9 (b) is the partial schematic sectional view of the A-B line of Fig. 9 (a).Pixel 62 has organic EL element on substrate 63,
The organic EL element has any of first electrode (anode) 64, hole transmission layer 65, luminescent layer 66R, 66G, 66B, electricity
Sub- transport layer 67 and second electrode (cathode) 68.Hole transmission layer 65, luminescent layer 66R, 66G, 66B, electronics in them pass
Defeated layer 67 is equivalent to organic layer.Moreover, in the present embodiment, luminescent layer 66R is to issue red organic EL layer, luminescent layer
66G is the organic EL layer for issuing green, and luminescent layer 66B is the organic EL layer for issuing blue.Luminescent layer 66R, 66G, 66B distinguish shape
As pattern corresponding with red, green, blue light-emitting component (also describing sometimes is organic EL element) is issued.Moreover, the
One electrode 64 is formed separately according to each light-emitting component.Hole transmission layer 65, electron transfer layer 67 and second electrode 68 can
To be collectively form with a plurality of light-emitting elements 62R, 62G, 62B, can also be formed according to each light-emitting component.It needs to illustrate
It is that the situation of first electrode 64 and second electrode 68 short circuit due to impurity, is equipped with insulating layer between first electrode 64 in order to prevent
69.In addition, organic EL layer can be deteriorated because of moisture or oxygen, therefore it is equipped with for protecting organic EL element to protect against moisture
Or the protective layer 70 of oxygen.
Next, illustrating the example of the manufacturing method of organic EL display device.
Firstly, preparing to be formed with circuit (not shown) and the first electrode 64 for driving organic EL display device
Substrate 63.
On the substrate 63 for being formed with first electrode 64, acrylic resin is formed by spin coating, acrylic resin is led to
Photoetching process is crossed, is patterned in a manner of in the part for being formed with first electrode 64 formation opening to form insulating layer 69.It should
Opening portion is equivalent to the practical light emitting region to shine of light-emitting component.
The substrate 63 patterned to insulating layer 69 is sent into the first film formation device, keeps base using substrate holding unit
Plate forms a film hole transmission layer 65 in the first electrode 64 of display area as general layer.Hole transmission layer 65 passes through
Vacuum evaporation and form a film.Actually hole transmission layer 65 is formed as the size bigger than display area 61, therefore does not need fine
Mask.
Next, the substrate 63 after formation hole transmission layer 65 is sent into the second film formation device, substrate is utilized to keep single
Member is kept.The alignment for carrying out substrate and mask issues red element in the configuration of substrate 63 on substrate-placing to mask
Part film forming issues red luminescent layer 66R.
It is same as the film forming of luminescent layer 66R, it is formed a film by third film formation device and issues the luminescent layer 66G, Jin Ertong of green
Cross the luminescent layer 66B that the 4th film formation device film forming issues blue.After the film forming of luminescent layer 66R, 66G, 66B are completed, pass through
Whole film forming electron transfer layer 67 of 5th film formation device in display area 61.Electron transfer layer 67 is formed in as general layer
Luminescent layer 66R, 66G, 66B of three colors.
Second electrode 68 is formed on forming the substrate after electron transfer layer 67, then forms protective layer 70, and organic EL is aobvious
Showing device 60 is completed.
Until being completed from the film forming that the substrate patterned to insulating layer 69 63 is fed through to protective layer 70 to film formation device,
If exposed to the open air under the atmosphere comprising moisture or oxygen, organic layer or electrode may be deteriorated because of moisture or oxygen.Therefore, exist
In this example, feeding submitting of the substrate between film formation device carries out under vacuum atmosphere or non-active gas atmosphere.
The organic EL display device obtained in this way accurately forms luminescent layer according to each light-emitting component.
Claims (27)
1. a kind of vacuum plant, comprising:
Inner space is the chamber of reduced atmosphere；And
The gate valve that the inner space of the chamber and exterior space are separated,
The vacuum plant is characterized in that,
The chamber includes the first chamber wall with opening,
The gate valve is arranged in a manner of covering the opening, is opened and closed along the direction intersected with the first chamber wall,
First face of the gate valve and temperature it is higher than the gate valve first component it is opposite,
Second face of the gate valve second component lower than the gate valve with temperature is opposite,
The radiance in first face is higher than the radiance in second face.
2. vacuum plant according to claim 1, which is characterized in that
First face is formed by fluororesin.
3. vacuum plant according to claim 1, which is characterized in that
Reflecting plate is equipped between second face and the second component.
4. vacuum plant according to claim 1, which is characterized in that
The chamber includes the second chamber wall opposite with the first chamber wall,
The first component is the second chamber wall.
5. vacuum plant according to claim 1, which is characterized in that
The second component is cryogenic pump or the vacuum evacuation pump comprising cryotrap.
6. vacuum plant according to claim 1, which is characterized in that
The radiance in first face is 0.8 or more.
7. a kind of vacuum plant, comprising:
Inner space is the chamber of reduced atmosphere；And
The gate valve that the inner space of the chamber and exterior space are separated,
The vacuum plant is characterized in that,
The chamber includes the first chamber wall and the second chamber wall opposite with the first chamber wall with opening,
The gate valve is arranged in a manner of covering the opening, is opened and closed along the direction intersected with the first chamber wall,
First face of the gate valve and the second chamber wall are opposite,
Second face of the gate valve and cryogenic pump or cryotrap are opposite,
The radiance in first face is higher than the radiance in second face.
8. vacuum plant according to claim 7, which is characterized in that
First face is formed by fluororesin.
9. vacuum plant according to claim 7, which is characterized in that
Reflecting plate is equipped between second face and the cryogenic pump or the cryotrap.
10. vacuum plant according to claim 7, which is characterized in that
The radiance in first face is 0.8 or more.
11. a kind of vacuum plant, comprising:
Inner space is the chamber of reduced atmosphere；And
The gate valve that the inner space of the chamber and exterior space are separated,
The vacuum plant is characterized in that,
The chamber has first chamber wall, and the first chamber wall has opening,
The gate valve is arranged in a manner of covering the opening, is opened and closed along the direction intersected with the first chamber wall,
The vacuum plant has the heat preservation mechanism for declining the heat dissipation capacity of the gate valve.
12. vacuum plant according to claim 11, which is characterized in that
The heat preservation mechanism is disposed on the reflecting plate between the gate valve and the temperature component lower than the gate valve.
13. vacuum plant according to claim 12, which is characterized in that
The reflecting plate overlaps multiple, multiple described reflecting plates are equipped with and configure with gap.
14. vacuum plant according to claim 11, which is characterized in that
The heat preservation mechanism is the rotating mechanism of the gate valve,
The gate valve is rotated when opening, and is reduced when the area ratio opposite with the opening is closed as a result,.
15. vacuum plant according to claim 1, which is characterized in that
The vacuum plant has the supporting device for making the gate valve driving,
The contact surface of the supporting device contacted with the gate valve is formed by spherical surface.
16. a kind of vacuum plant, comprising:
Inner space is the chamber of reduced atmosphere；And
The gate valve that the inner space of the chamber and exterior space are separated,
The vacuum plant is characterized in that,
The chamber has first chamber wall, and the first chamber wall has opening,
The gate valve is arranged in a manner of covering the opening, is opened and closed along the direction intersected with the first chamber wall,
The vacuum plant includes
For making the supporting device of the gate valve driving；And
Supply the heat supply mechanism of heat to the gate valve by heat transfer with the path different from the supporting device.
17. vacuum plant according to claim 16, which is characterized in that
The heat supply mechanism is to connect when the gate valve is opened with gate valve, the structure separated when the gate valve is closed with gate valve
Part.
18. vacuum plant according to claim 16, which is characterized in that
The heat supply mechanism is the fluid to connect in space made of dividing in the inner space to the chamber with gate valve.
19. vacuum plant according to claim 18, which is characterized in that
The inner space of the chamber with divided made of the space divided by bellows.
20. vacuum plant according to claim 16, which is characterized in that
The heat transfer of the heat supply mechanism to the gate valve is higher than the heat transfer of the supporting device to the gate valve.
21. vacuum plant according to claim 16, which is characterized in that
The contact surface of the supporting device contacted with the gate valve is formed by spherical surface.
22. a kind of evaporation coating device comprising:
Vacuum plant described in any one of claim 1~21；And
Evaporation source in the vacuum plant is set,
The evaporation coating device has and will be contained in the evaporation material of the evaporation source to being sent to being steamed in the vacuum plant
The vapor deposition process that plating body is deposited.
23. a kind of evaporation coating device, comprising:
Vacuum plant described in claim 1；And
Evaporation source in the vacuum plant is set,
The evaporation coating device will be contained in the evaporation material of the evaporation source to being sent to being steamed in the vacuum plant
Plate the vapor deposition process of body vapor deposition, which is characterized in that
The second component is that cryogenic pump or the vacuum evacuation comprising cryotrap pump,
During the gate valve is opened and the state of cryogenic pump operating continues, sent after the vapor deposition by vapor deposition body
Enter different the vapor deposition process to be repeated by vapor deposition body.
24. a kind of gate valve is arranged in a manner of covering opening, it is opened and closed along the direction intersected with the wall for forming the opening,
It is characterized in that,
The radiance in the first face is higher than the radiance in the second face,
Reflecting plate is equipped in the second face.
25. gate valve according to claim 24, which is characterized in that
First face is the surface of fluororesin.
26. gate valve according to claim 24, which is characterized in that
The radiance in first face is 0.8 or more.
27. the gate valve according to any one of claim 24~26, which is characterized in that
The reflecting plate configuration is between the gate valve and the temperature component lower than the gate valve.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017199241A JP6556802B2 (en) | 2017-10-13 | 2017-10-13 | Vacuum equipment, vapor deposition equipment and gate valve |
| JP2017-199241 | 2017-10-13 |
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| CN109666888A true CN109666888A (en) | 2019-04-23 |
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| CN201810616374.4A Pending CN109666888A (en) | 2017-10-13 | 2018-06-15 | Vacuum plant, evaporation coating device and gate valve |
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| JP (1) | JP6556802B2 (en) |
| KR (1) | KR102456282B1 (en) |
| CN (1) | CN109666888A (en) |
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| CN113175537A (en) * | 2021-04-24 | 2021-07-27 | 丁永进 | Gate valve system based on intelligent hydraulic engineering and operation method thereof |
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| KR102456282B1 (en) | 2022-10-18 |
| KR20190041901A (en) | 2019-04-23 |
| JP6556802B2 (en) | 2019-08-07 |
| JP2019073753A (en) | 2019-05-16 |
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