CN109661715B - 气相生长装置及外延晶片的制造方法 - Google Patents

气相生长装置及外延晶片的制造方法 Download PDF

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Publication number
CN109661715B
CN109661715B CN201780054077.9A CN201780054077A CN109661715B CN 109661715 B CN109661715 B CN 109661715B CN 201780054077 A CN201780054077 A CN 201780054077A CN 109661715 B CN109661715 B CN 109661715B
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China
Prior art keywords
inlet
reaction furnace
phase growth
vapor phase
flow paths
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CN201780054077.9A
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Chinese (zh)
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CN109661715A (zh
Inventor
大西理
桝村寿
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Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
CN201780054077.9A 2016-09-05 2017-07-06 气相生长装置及外延晶片的制造方法 Active CN109661715B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016172751 2016-09-05
JP2016-172751 2016-09-05
PCT/JP2017/024821 WO2018042876A1 (ja) 2016-09-05 2017-07-06 気相成長装置及びエピタキシャルウェーハの製造方法

Publications (2)

Publication Number Publication Date
CN109661715A CN109661715A (zh) 2019-04-19
CN109661715B true CN109661715B (zh) 2023-07-28

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CN201780054077.9A Active CN109661715B (zh) 2016-09-05 2017-07-06 气相生长装置及外延晶片的制造方法

Country Status (5)

Country Link
JP (1) JP6403106B2 (ko)
KR (1) KR102357017B1 (ko)
CN (1) CN109661715B (ko)
TW (1) TWI695085B (ko)
WO (1) WO2018042876A1 (ko)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1330169A (zh) * 2000-06-22 2002-01-09 古河电气工业株式会社 将流体分散后供给的喷嘴板部件及其制造方法
US6443213B1 (en) * 2000-05-11 2002-09-03 Pcc Airfoils, Inc. System for casting a metal article using a fluidized bed
JP2004010989A (ja) * 2002-06-10 2004-01-15 Sony Corp 薄膜形成装置
CN101443474A (zh) * 2006-03-23 2009-05-27 应用材料股份有限公司 改善大面积基板均匀性的方法和设备
JP2010263112A (ja) * 2009-05-08 2010-11-18 Sumco Corp エピタキシャル成長装置及びシリコンエピタキシャルウェーハの製造方法
WO2011077641A1 (ja) * 2009-12-24 2011-06-30 信越半導体株式会社 エピタキシャル成長装置及びエピタキシャル成長装置の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000068215A (ja) * 1998-08-18 2000-03-03 Shin Etsu Handotai Co Ltd 気相薄膜成長方法およびこれに用いる気相薄膜成長装置
US6502530B1 (en) * 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
JP2005183511A (ja) * 2003-12-17 2005-07-07 Shin Etsu Handotai Co Ltd 気相成長装置およびエピタキシャルウェーハの製造方法
JP5069424B2 (ja) 2006-05-31 2012-11-07 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 成膜反応装置及び同方法
JP4978554B2 (ja) 2008-05-12 2012-07-18 信越半導体株式会社 薄膜の気相成長方法および気相成長装置
JP5170056B2 (ja) 2009-10-19 2013-03-27 信越半導体株式会社 エピタキシャル成長装置及びエピタキシャル成長方法
JP5413305B2 (ja) * 2010-05-25 2014-02-12 信越半導体株式会社 エピタキシャル成長装置
JP5862529B2 (ja) * 2012-09-25 2016-02-16 東京エレクトロン株式会社 基板処理装置及びガス供給装置
US9799548B2 (en) * 2013-03-15 2017-10-24 Applied Materials, Inc. Susceptors for enhanced process uniformity and reduced substrate slippage
WO2014143499A1 (en) * 2013-03-15 2014-09-18 Applied Materials, Inc. Susceptor support shaft with uniformity tuning lenses for epi process
KR101487409B1 (ko) * 2013-07-19 2015-01-29 주식회사 엘지실트론 에피텍셜 반응기
KR102127715B1 (ko) * 2013-08-09 2020-06-29 에스케이실트론 주식회사 에피텍셜 반응기
SG10201810902WA (en) * 2014-06-13 2019-01-30 Applied Materials Inc Dual auxiliary dopant inlets on epi chamber
US10760161B2 (en) * 2014-09-05 2020-09-01 Applied Materials, Inc. Inject insert for EPI chamber

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6443213B1 (en) * 2000-05-11 2002-09-03 Pcc Airfoils, Inc. System for casting a metal article using a fluidized bed
CN1330169A (zh) * 2000-06-22 2002-01-09 古河电气工业株式会社 将流体分散后供给的喷嘴板部件及其制造方法
JP2004010989A (ja) * 2002-06-10 2004-01-15 Sony Corp 薄膜形成装置
CN101443474A (zh) * 2006-03-23 2009-05-27 应用材料股份有限公司 改善大面积基板均匀性的方法和设备
JP2010263112A (ja) * 2009-05-08 2010-11-18 Sumco Corp エピタキシャル成長装置及びシリコンエピタキシャルウェーハの製造方法
WO2011077641A1 (ja) * 2009-12-24 2011-06-30 信越半導体株式会社 エピタキシャル成長装置及びエピタキシャル成長装置の製造方法

Also Published As

Publication number Publication date
CN109661715A (zh) 2019-04-19
JP6403106B2 (ja) 2018-10-10
KR102357017B1 (ko) 2022-01-28
KR20190046826A (ko) 2019-05-07
TWI695085B (zh) 2020-06-01
WO2018042876A1 (ja) 2018-03-08
JPWO2018042876A1 (ja) 2018-08-30
TW201825703A (zh) 2018-07-16

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