CN109637982A - 半导体元件和用于制造半导体元件的方法 - Google Patents

半导体元件和用于制造半导体元件的方法 Download PDF

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Publication number
CN109637982A
CN109637982A CN201811158550.0A CN201811158550A CN109637982A CN 109637982 A CN109637982 A CN 109637982A CN 201811158550 A CN201811158550 A CN 201811158550A CN 109637982 A CN109637982 A CN 109637982A
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shell
electric contact
semiconductor chip
closing line
protection materials
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CN109637982B (zh
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M·瓦佩尔
B·克诺特
H·托伊斯
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Infineon Technologies AG
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Infineon Technologies AG
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Abstract

本发明提出了一种制造半导体元件的方法。该方法包括提供壳体。至少一个半导体芯片布置在壳体的空腔中。此外，半导体芯片的电触点通过接合线连接到壳体的电触点。该方法还包括将保护材料施加到半导体芯片的电触点以及接合线与半导体芯片的电触点的邻接区域，和/或施加到壳体的电触点以及接合线与壳体的电触点的邻接区域。此外，该方法还包括用凝胶填充空腔的至少一个子区域。

Description

半导体元件和用于制造半导体元件的方法
技术领域
本申请的实施例涉及半导体元件以及其制造方法。
背景技术
半导体元件、或者更确切地说半导体元件的壳体常暴露在腐蚀性介质中。例如汽车领域应用的半导体元件必须相对于严重的环境压力而保持稳定。进一步举例用于进气压力测量的(例如在废气再循环系统中的)压力传感器。它会受到腐蚀性物质，例如废气中的盐或酸与水气结合。特别是在半导体元件没有完全被它的壳体包围时，壳体中的连接件(例如各种不同的电触点之间的电线)特别会受腐蚀的影响。
发明内容
因此，需要提供高稳固性的半导体元件来抵抗腐蚀性介质。
用于制造半导体元件的方法的实施例包括提供壳体。至少一个半导体芯片布置在壳体的空腔中。此外，半导体芯片的电触点通过接合线连接到壳体的电触点。该方法还包括将保护材料施加到半导体芯片的电触点以及接合线与半导体芯片的电触点的邻接区域，和/或施加到壳体的电触点以及接合线与壳体的电触点的邻接区域。另外，该方法还包括使用凝胶填充空腔的至少一个子区域。
实施例还涉及半导体元件。半导体元件包括壳体和至少一个布置在壳体的空腔中的半导体芯片。半导体芯片的电触点通过接合线连接到壳体的电触点。此外，保护材料被施加到半导体芯片的电触点以及接合线与半导体芯片的电触点的邻接区域，和/或被施加到壳体的电触点以及接合线与壳体的电触点的邻接区域。另外，空腔的至少一个子区域填充有凝胶。
附图说明
现在将仅通过示例的方式参考附图更详细地解释设备和/或方法的一些示例。在图中：
图1示出了半导体元件的第一实施例；
图2示出了半导体元件的第二实施例；以及
图3示出了用于制造半导体元件的方法的实施例的流程图。
具体实施方式
现在将参考附图更详细地描述各种示例，附图中示出了一些示例。在附图中，为了清楚起见，线、层和/或区域的厚度可能被夸大。
因此，尽管其他示例适合于各种修改和替代形式，但是一些具体示例将在附图中示出并且将在下面详细描述。然而，该详细描述不是将其他示例限制于所描述的特定形式。其他示例可以涵盖本公开涉及范围内的所有修改、等同形式和替代形式。在全部附图的描述中，相同的附图标记指代相同或相似的元件，这些元件彼此相比而言可以是相同的或者是以修改的形式实现，同时提供相同或相似的功能。
应当理解，当一个元件被称为“连接”或“耦合”到另一个元件时，这些元件可以直接地或者通过一个或多个中间元件连接或耦合。当使用“或”组合两个元素A和B时，应理解为公开了所有可能的组合，即，可以仅包括A、仅包括B以及包括A和B。用于相同组合的替代表述是“A和B中的至少一个”。这同样适用于超过2个元素的组合。
用于描述某些示例的术语不旨在限制于其他示例。如果使用单数形式，例如使用“一个”以及仅使用单个元件而没有明确地或隐含地强制性定义，则其他示例也可以使用多个元件来实现相同的功能。如果以下将功能描述为使用多个元件实现，则其他示例可以使用单个元件或单个处理实体来实现相同的功能。此外应当理解，术语“包含”、“包含”、“具有”和/或“带有”在使用中表示存在指定的特征、整数、步骤、操作、过程、元件、组件和/或其组合，但不排除存在或添加一个或多个其他的特征、整数、步骤、操作、过程、元件、组件和/或其组合。
除非另外定义，否则所有术语(包括技术和科学术语)在本文中以其在示例所属领域中的普通含义使用。
图1示出了半导体元件100。半导体元件100包括壳体110和至少一个布置在壳体110的空腔111中的半导体芯片120。
因此，壳体110可以理解为空腔壳体。例如，壳体110可以是预模制引线框架，即注塑包封的并有空腔的金属框架。同样地，壳体110可以例如是多层陶瓷壳体，在其中形成有空腔。也可以用任何其他材料代替陶瓷来形成具有空腔的多层壳体(例如，与电路板类似的材料)。
半导体芯片120可以是芯片形式的任何半导体元件。例如，半导体芯片120可以是MEMS(微机电系统)传感器，例如压力传感器。在一些实施例中，半导体芯片120还可以是另一半导体元件，例如集成电路，或MEMS传感器与另一半导体元件的组合。半导体芯片120接合在空腔111上(例如，粘合或焊接)。
半导体芯片120的电触点121经由接合线130连接到壳体110的电触点112上的。壳体110的电触点112限定空腔111。半导体芯片120还可以具有另外的电触点，其通过另外的接合线连接到壳体110的另外的电触点。在图1中仅示例性示出半导体芯片120的另外的电触点122，其经由另外的接合线131连接到壳体110的另外的电触点113。
通过壳体110的电触点112(以及另外的电触点)，半导体元件100以及半导体芯片120可以连接或耦合到其他(外部)实体上(例如，电路、电源或数据线)。
空腔111的至少一个子区域填充有凝胶140。凝胶140可以是例如(软的)硅胶。如果半导体芯片120例如是MEMS压力传感器，则可以通过凝胶140实现MEMS压力传感器(或其薄膜)与作用在半导体元件100上的压力的良好耦合。相应地可以实现高质量的压力测量。同样地，凝胶140可以防止颗粒。而且，凝胶140可以限制(应力敏感的)半导体芯片120上的封装引起的机械应力。此外，凝胶140可以为开放的金属区域(例如电触点112,113,121,122或接合线130,131)提供一定的防腐蚀保护。然而，仅通过凝胶140的防腐蚀保护有时是有限的。例如，硅胶可以允许侵蚀性介质扩散或渗透到开放的金属区域。
因此，附加的保护材料150被使用于半导体芯片120的(整个)电触点121以及(仅)接合线130与半导体芯片120的电触点121的邻接区域。同样地，保护材料150被使用于壳体110的(整个)电触点112以及(仅)接合线130与壳体110的电触点112的邻接区域。
将保护材料150施加到电触点112、121和接合线130与电触点112、121的邻接区域可以降低这些元件对腐蚀的易受侵蚀性，因为它比凝胶140具有对抗侵蚀性介质及化学材料(化学气体)更好的稳定性。相应地，可以增加半导体元件100对抗侵蚀性介质或化学品的稳定性。因此可以改善半导体元件100的可靠性。保护材料150可以根据其对于物质的防护性能来选择，半导体元件100的未封闭的金属部分要针对该物质进行保护。保护材料150可以具有例如与接合线130(例如，金)材料类似的热膨胀系数。例如，保护材料可以是环氧树脂、硅树脂、酰亚胺、聚合物、合成树脂、聚氨酯或漆。相应地可以实现保护材料150与壳体110(例如，模塑料)的良好粘附性以及低粘度(即良好的填充性能)。
如图1中所示，保护材料还可以应用于半导体芯片120和壳体110的另外的电触点以及连接电触点的接合线的邻接区域。在图1中，这仅作为示例示出了半导体芯片120的另外的电触点122，其经由另外的接合线131连接到壳体110的另外的电触点113。保护材料150不仅被施加到半导体芯片120的另外的电触点122上，还施加到壳体110的另外的电触点113，并施加到另外的接合线131的邻接两个电触点的区域。
由保护材料150覆盖的接合线130与半导体芯片120的电触点121的邻接区域及接合线130与壳体110的电触点121的邻接区域只延伸接合线130的一小段长度。因此，可以实现保护接合线130并连接电触点112、121抵抗侵蚀性介质与避免将机械应力引入到半导体芯片120之间的折中。由于保护材料150仅沿接合线130的一部分长度施加，因此可以限制由于附加保护材料150而引入半导体芯片120的机械应力。同时，可以保护接合线130与电触点112、121的连接部分的特别敏感的区域(这里接合线130会更薄)。例如，接合线130与半导体芯片120的电触点121邻接的部分可以延伸小于接合线130长度的10％、15％、20％、25％、30％、35％或40％。同时，接合线130与壳体110电触点112相邻的部分可以延伸小于接合线130的长度的10％、15％、20％、25％、30％、35％或40％。这也可以适用于半导体元件100内的其他接合线(例如，接合线131)的保护材料150的施加。
半导体元件100的制造可以包括壳体110的空腔111中的半导体芯片120的切削及接合。换言之，该方法首先包括提供壳体110，其中半导体芯片120至少布置在壳体110的空腔111中，此外半导体芯片120的电触点121经由接合线130与壳体110电触点112连接。
随后，将附加的保护材料150选择性地施加到包含导线连接的金属接合面。换言之，该方法还包括将保护材料150施加到半导体芯片120的电触点121及接合线130与半导体芯片120的电触点121的邻接区域，并且施加到壳体110的电触点112及接合线与130壳体110的电触点112的邻近区域。
保护材料150的施加可以通过许多方式完成。例如，可以在不使用掩模的情况下施加保护材料150。这可以通过例如浇注或注射保护材料150来完成。
替代地，保护层(即保护材料150)的沉积可以通过相应的掩模完成。换言之，保护材料150的施加可以包括将保护材料150沉积到空腔111中。例如，可以通过气相沉积或通过喷涂来施加保护材料150。然后，保护材料150的施加还包括形成光刻胶结构，蚀刻保护材料的未被光刻胶结构覆盖的部分，以及随后去除光刻胶结构。
通过用凝胶140(例如，硅胶)填充空腔111的至少一个子区域来完成该方法。如图1所示，用凝胶140填充空腔111的至少一个子区域包括用凝胶140完全包围半导体芯片120、壳体110的电触点112和接合线130(以及半导体芯片120和壳体110之间的其他电连接)。
此外，半导体元件100的制造可以包括固化保护材料150。
为了避免保护材料150不受控制的扩散、散射、渗出，在半导体元件100中提供凸起，该凸起至少部分地包围由保护材料150覆盖的电触点。施加保护材料150的选择性可以通过额外使用这些“连接中断”来辅助。在低表面张力或低粘度的保护材料150的情况下，通过具有化学稳固性并具有高表面张力或高粘度(例如，塑料或模塑化合物)的凸起可以避免不希望的保护材料150的扩展。
如图1中所示，第一凸起114形成在壳体110中，其至少部分地包围壳体110的电触点112。在图1所示的示例中，电触点112形成于邻近壳体110的侧边界(侧壁)115。因此，凸起114仅部分地包围壳体110的电触点112就足够了。壳体110的侧边界115还形成了保护材料150的自然边界。从图1中可以看出，保护材料150被引入壳体110的电触点112上方由第一凸起114围绕的容积中。因此，可以防止保护材料150的不受控制的扩散，使得保护材料150仅覆盖壳体110的电触点112和接合线130与壳体110的电触点112的邻接区域。
连接中断、即凸起114可以成型在预成型工艺期间，也就是形成壳体110时。这可以节省成本，因为不需要用于形成凸起114的附加工艺。替代地，凸起114的成型可以是半导体芯片120的接合之前或之后的另一附加扩散工艺的一部分。换言之，提供壳体110可以包括：在壳体110中形成凸起114。此外，将保护材料150施加在壳体110的电触点112以及接合线130与壳体110的电触点112的邻近区域包括：将保护材料150引入壳体110的电触点112上方由凸起114围绕的容积中。如上所述，可以在将半导体芯片120布置在壳体110中之前或之后，在壳体110中形成凸起114。
同样地，半导体芯片120的电触点121至少部分地被第二凸起123包围，其中保护材料150被引入半导体芯片120的电触点121上方由第二凸起123围绕的容积中。第二凸起123的形成(成型)也可以在半导体芯片120的接合之前或之后通过扩散工艺完成。替代地，例如在半导体芯片120上可以在晶片级的芯片/接合面周围产生相应的框架。例如，在半导体芯片120上的聚酰亚胺或树脂可以沉积在半导体芯片120上，并通过光刻方法以形成第二凸起123。换言之，提供壳体110可以包括：在半导体芯片120上形成凸起123，其中施加保护材料150到半导体芯片120的电触点121以及接合线130与半导体芯片120的电触点121的邻接区域包括：将保护材料150引入半导体芯片120的电触点121上方由凸起123围绕的容积中。如上所述，可以在将半导体芯片120布置在壳体110中之前或之后，在半导体芯片120上形成凸起123。
如图1中结合半导体芯片120的另外的电触点122、壳体110的另外的电触点113以及另外的接合线131在两个电触点的邻接区域所示，保护材料150也可以用于没有凸起或连接中断的情况。当保护材料具有更高的表面张力或更高的粘度时，例如可以省去凸起或连接中断。
在图1所示的半导体元件100中，半导体芯片120的电触点121、壳体110的电触点112和接合线130与电触点邻接的区域都被保护材料覆盖。在一些实施例中，也可以仅半导体芯片的电触点及接合线的邻接区域或仅壳体的电触点以及接合线的邻接区域各自施加保护材料。这在图2中以示例的方式示出。
在图2中所示的半导体元件200中，与图1的半导体元件100相反，保护材料250仅施加于壳体210的电触点212及接合线230与壳体210的电触点212的邻接区域。在半导体芯片220的电触点221及接合线230与半导体芯片220的电触点221的邻接区域没有施加保护材料。
为了防止保护材料250在壳体210的空腔211中不受控制地扩散，再次形成凸起214，其部分地包围壳体210的电触点212。
相应地，保护材料250也被施加到壳体210的另一电触点213以及另一接合线231与壳体210的另一电触点213的邻接区域。同样地，半导体芯片220的另一电触点222及另一接合线231与半导体芯片220的另一电触点222的邻接区域也没有施加保护材料。
此外，空腔211的至少一个子区域再次填充有凝胶240。
替代地，根据一些实施例，保护材料可以仅施加到半导体芯片的电触点及接合线与半导体芯片220的电触点的邻接区域，同时壳体的电触点及接合线与壳体的电触点的邻接区域没有施加保护材料。
为了根据所提出的架构再次总结上述制造半导体元件的观点，在图3中示出了用于制造半导体元件的方法300的流程图。
方法300包括提供302壳体。半导体芯片被布置在壳体的空腔中。此外，半导体芯片的电触点通过接合线连接到壳体的电触点。方法300还包括将保护材料施加304到半导体芯片的电触点以及接合线与半导体芯片的电触点的邻接区域和/或施加到壳体的电触点以及接合线与壳体的电触点的邻接区域。另外，方法300还包括用凝胶填充306空腔的至少一个子区域。
方法300可以能够使半导体元件的制造具有增强的对侵蚀性介质的稳固性。因此，可以改善对抗腐蚀的性能，从而改善根据方法300制造的半导体元件的可靠性。换言之，方法300可以实现改善安装在空腔中、凝胶封装的半导体芯片的可靠性。特别地，方法300可以通过在凝胶浇铸之前在金属线-接合面-互连上沉积保护层(例如，环氧树脂)来实现。在一些实施例中，这可以通过连接中断结构来辅助，以避免溢出效应。
以上结合一个或多个其他实施例描述了方法300的其他细节和观点。方法300可以包括根据一个或多个其他实施例的一个或多个可选特征。
上述原理可用于任何应用，其包括铸造封装的空腔里固定的芯片。例如，用于传感器或电源应用、MEMS应用、压力传感器、汽车进气压力应用。特别地，上述原理可以应用于金属线-基层-互连和/或金属线-芯片-互连。保护材料与连接中断结构的组合是可选且有帮助的。
借助一个或多个上述详细的示例和附图描述的观点和特征也可以与一个或多个其他示例组合，以替换另一示例的相同的特征或者向另一示例中附加地引入特征。
说明书和附图仅描绘了本公开的原理。另外，本文提供的所有实施例明确地旨在仅用于帮助读者理解本公开的原理和用于推进由发明人贡献的技术的概念。本文关于公开的原理，观点和示例的所有陈述以及其具体示例包括它们的等同物。
应当理解，除非明确地或隐含地另外指出，如出于技术原因，否则说明书或权利要求中公开的若干步骤、过程、操作或功能的公开内容不应被解释为以现有的任何特定顺序。因此，它们不限于通过公开由多个步骤或功能的特定顺序，除非这些步骤或功能由于技术原因不可互换。此外，在一些示例中，单个步骤、功能、过程或操作可以包括和/或分成多个子步骤、功能、过程或操作。除非明确排除，否则可以包括这些子步骤并且是该单个步骤的公开内容的一部分。
此外，以下权利要求在此并入具体实施方式中，其中每个权利要求可以作为单独的示例独立存在。尽管每个权利要求可以作为单独的示例独立存在，但是应当注意，虽然相关权利要求可以涉及权利要求中的一个或多个其他权利要求的特定组合，但是其他示例还可以包括相关权利要求与每个其他的有关的或无关的权利要求的组合。除非声明不打算使用某个特定组合，否则这些组合都将被明确提出。此外，旨在包括一个权利要求与任何其他独立权利要求的特征组合，即使该权利要求不是直接依赖于该独立权利要求。

Claims (20)

1.一种用于制造半导体元件的方法(100)，包括：
提供(302)壳体，其中至少一个半导体芯片布置在所述壳体的空腔中，并且其中所述半导体芯片的电触点通过接合线连接到所述壳体的电触点；
施加(304)保护材料到所述半导体芯片的电触点以及所述接合线与所述半导体芯片的电触点的邻接区域，和/或施加(304)保护材料到所述壳体的电触点以及所述接合线与所述壳体的电触点的邻接区域；以及
使用凝胶填充(306)所述空腔的至少一个子区域。
2.根据权利要求1所述的方法，
其中所述接合线与所述半导体芯片的电触点的邻接区域延伸小于所述接合线的长度的30％，和/或
其中所述接合线与所述壳体的电触点的邻接区域延伸小于所述接合线的长度的30％。
3.根据前述权利要求中任一项所述的方法，其中所述保护材料是环氧树脂。
4.根据前述权利要求中任一项所述的方法，其中所述半导体芯片是MEMS传感器。
5.根据权利要求4所述的方法，其中所述MEMS传感器是压力传感器。
6.根据前述权利要求中任一项所述的方法，其中所述壳体的电触点限定所述空腔。
7.根据前述权利要求中任一项所述的方法，其中使用凝胶填充(306)所述空腔的至少一个子区域包括：使用所述凝胶完全包围所述半导体芯片、所述壳体的电触点和所述接合线。
8.根据前述权利要求中任一项所述的方法，其中施加(304)保护材料包括：浇注或注射所述保护材料。
9.根据前述权利要求中任一项所述的方法，其中施加(304)保护材料包括：
将所述保护材料沉积到所述空腔中；
形成光刻胶结构；
蚀刻所述保护材料的未被所述光刻胶结构覆盖的部分；和
去除所述光刻胶结构。
10.根据前述权利要求中任一项所述的方法，
其中提供(302)壳体包括：在所述壳体中形成至少部分地包围所述壳体的电触点的凸起；并且
其中施加(304)保护材料到所述壳体的电触点以及所述接合线与所述壳体的电触点的邻接区域包括：将所述保护材料引入所述壳体的电触点上方由所述凸起围绕的容积中。
11.根据权利要求10所述的方法，其中，在将所述半导体芯片布置在所述壳体中之前，在所述壳体中形成所述凸起。
12.根据权利要求10所述的方法，其中，在将所述半导体芯片布置在所述壳体中之后，在所述壳体中形成所述凸起。
13.根据前述权利要求中任一项所述的方法，
其中提供(302)壳体包括：在所述半导体芯片上形成至少部分地包围所述半导体芯片的电触点的凸起；并且
其中施加(304)保护材料到所述半导体芯片的电触点以及所述接合线与所述半导体芯片的电触点的邻接区域包括：将所述保护材料引入所述半导体芯片的电触点上方由所述凸起围绕的容积中。
14.根据前述权利要求中任一项所述的方法，其中所述凝胶是硅胶。
15.一种半导体元件(100)，包括：
壳体(110)；和
至少一个半导体芯片(120)，所述半导体芯片(120)布置在所述壳体(110)的空腔(111)中，
其中所述半导体芯片(120)的电触点(121)通过接合线(130)连接到所述壳体(110)的电触点(112)；
其中保护材料(150)被施加到所述半导体芯片(120)的电触点(121)以及所述接合线(130)与所述半导体芯片(120)的电触点(121)的邻接区域，和/或被施加到所述壳体(110)的电触点(112)以及所述接合线(130)与所述壳体(110)的电触点(112)的邻接区域，并且
其中所述空腔(111)的至少一个子区域填充有凝胶(140)。
16.根据权利要求15所述的半导体元件，
其中所述接合线(130)与所述半导体芯片(120)的电触点(121)的邻接区域延伸小于所述接合线(130)的长度的30％，和/或
其中所述接合线(130)与所述壳体(110)的电触点(112)的邻接区域延伸小于所述接合线(130)的长度的30％。
17.根据权利要求15或16所述的半导体元件，其中所述保护材料是环氧树脂。
18.根据权利要求15至17中任一项所述的半导体元件，其中所述半导体芯片(120)是MEMS传感器。
19.根据权利要求15至18中任一项所述的半导体元件，其中所述壳体(110)的电触点(112)限定所述空腔(111)。
20.根据权利要求15至19中任一项所述的半导体元件，
其中第一凸起形成在所述壳体(110)中，所述第一凸起至少部分地包围所述壳体(110)的电触点(112)，并且所述保护材料被引入所述壳体(110)的电触点(112)上方由所述第一凸起围绕的容积中，和/或
其中第二凸起至少部分地包围所述半导体芯片(120)的电触点(121)，并且所述保护材料被引入所述半导体芯片(120)的电触点(121)上方由所述第二凸起围绕的容积中。
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