CN109637965A - 一种采用双金刚石层实现GaN原始衬底转移的方法及应用 - Google Patents
一种采用双金刚石层实现GaN原始衬底转移的方法及应用 Download PDFInfo
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Abstract
本发明公开了一种采用双金刚石层实现GaN原始衬底转移的方法及应用。方法包括:选择一种GaN晶圆,GaN晶圆具有原始衬底;在GaN晶圆生长面表面生长第一过渡层;在第一过渡层表面沉积第一CVD金刚石膜,作为临时载体;采用化学腐蚀或者激光剥离技术,将GaN原始衬底去除,GaN露出形核面;在GaN晶圆形核面表面生长第二过渡层,作为介电层;在第二过渡层表面沉积第二CVD金刚石膜,作为GaN的导热衬底;选择性刻蚀第一过渡层,保留第二过渡层。本发明减少了Si晶圆键合工艺的引入,同时由于正反两面都是金刚石膜,能有效缓解GaN薄膜变形从而发生开裂的问题,可有效提升金刚石膜替代GaN原始衬底的质量和效率。
Description
技术领域
本发明属于半导体制造领域,特别提供了一种实现金刚石基GaN半导体结构的衬底转移方法,更具体地,提供了一种采用双金刚石层实现GaN原始衬底转移的方法及应用。
背景技术
氮化镓是近年来最具发展潜力的半导体材料。随着基于氮化镓(GaN)材料的微波功率器件向更小尺寸、更大输出功率和更高频率的方向发展,“热”的问题越来越突出,逐渐成为制约这种器件向更高性能提升的瓶颈之一。金刚石薄膜热导率可达2000W/(m·k)(银和铜常温下热导率分别为420W/(m·k)和395 W/(m·k)),是一种非常理想的导热衬底材料。采用高热导率金刚石膜作为高频、大功率氮化镓(GaN)基器件的衬底或热沉,可以显著降低氮化镓(GaN)基大功率器件的自加热效应,并有望解决随总功率增加、频率提高出现的功率密度迅速下降的问题。但是要实现金刚石基GaN薄膜结构,目前最可行的方式是采用金刚石膜替代GaN已有的原始衬底。
美国专利US005650639A最早提出了一种采用金刚石作为基底的集成电路设计,主要涉及Si-On-diamond结构,后来由Group4公司的Francis等人进一步发展为GaN-On-diamond结构(中国专利CN104285001A,美国专利 US9359693B2)。同样的,中国专利CN104157744A也提到了一种基于外延层转移实现金刚石基GaN的方法。上述方法普遍的思路是先在GaN表面通过键和Si 晶圆的方式,将GaN保护起来,然后去除原始衬底,再在GaN背面进行金刚石膜的转移。在这种思路中,均用到了晶圆键合技术。这种技术对表面状态及键合设备要求较高,要实现高质量的键合难度很大。此外,如果在后续金刚石转移过程中,如果采用生长CVD金刚石膜的技术路线(该路线实现的金刚石膜导热能力更佳),则大多数键合工艺将无法承受CVD金刚石膜生长环境。因此,需要发展优化或取消键合工艺的方法。
发明内容
为了解决以上问题,本发明提出一种采用双金刚石层实现GaN原始衬底转移的方法及应用,以生长的CVD金刚石膜作为临时载体,实现原始衬底的去除,然后再生长另一层CVD金刚石膜作为导热衬底,最后辅助选择性刻蚀的技术实现完整的金刚石基GaN结构的方法。
根据本发明的第一方面,提供一种采用双金刚石层实现GaN原始衬底转移的方法,所述方法采用双金刚石层,既利用CVD金刚石膜作为临时载体,同时又利用CVD金刚石膜作为转移衬底,由于正反两面都是金刚石膜,有效缓解GaN 薄膜变形从而发生开裂的问题,所述方法包括:
1.选择一种GaN晶圆,所述GaN晶圆具有原始衬底;
2.在GaN晶圆生长面表面生长第一过渡层;
3.在所述第一过渡层表面沉积第一CVD金刚石膜,作为临时载体;
4.采用化学腐蚀或者激光剥离技术,将GaN原始衬底去除,GaN露出形核面;
5.在GaN晶圆形核面表面生长第二过渡层,作为介电层;
6.在所述第二过渡层表面沉积第二CVD金刚石膜,作为GaN的导热衬底;
7.选择性刻蚀所述第一过渡层,保留第二过渡层,使得作为临时载体的第一CVD金刚石膜剥离,作为导热衬底的第二CVD金刚石膜保留,从而实现金刚石膜替代原始衬底。
进一步的,在步骤1中,所述原始衬底为Si基、蓝宝石基或者SiC基。
进一步的,采用真空镀膜技术在GaN晶圆生长面表面和形核面表面生长第一过渡层和第二过渡层。
进一步的,在步骤2中,所述第一过渡层厚度大于等于1μm,需达到均匀致密的效果,且所述过渡层的材质为Si、Ti、Mo、W单质元素,或者SiO2、TiC 化合物,或者前述各项的复合。
进一步的,所述第二过渡层的厚度小于等于50nm。
进一步的,采用等离子体化学气相沉积系统沉积第一金刚石膜和第二金刚石膜,且所述第一金刚石膜和第二金刚石膜的厚度均为100-300微米。
进一步的,采用化学腐蚀或者电化学辅助刻蚀技术来选择性刻蚀所述第一过渡层。
根据本发明的第二方面,提供一种金刚石基GaN半导体材料的制备方法,包括以下步骤:
1.在原始衬底上沉积GaN层;
2.采用根据以上任一方面所述的GaN原始衬底转移方法进行衬底转移,形成金刚石基GaN半导体材料。
进一步的,在步骤1中,所述原始衬底为Si基、蓝宝石基或者SiC基。
根据本发明的第三方面,提供一种金刚石基GaN半导体材料,所述金刚石基GaN半导体材料采用根据以上任一方面所述的金刚石基GaN半导体材料的制备方法获得。
本发明的有益效果:
本发明采用双金刚石层的设计方案,既利用CVD金刚石膜作为临时载体,同时又利用金刚石膜作为转移衬底。本发明减少了Si晶圆键合工艺的引入,同时由于正反两面都是金刚石膜,能有效缓解GaN薄膜变形从而发生开裂的问题,可有效提升金刚石膜替代GaN原始衬底的质量和效率。
附图说明:
图1示出根据本发明的采用双金刚石层实现GaN原始衬底转移的方法流程图;
图2A示出带有原始衬底的GaN薄膜;
图2B示出在GaN薄膜表面生长第一过渡层;
图2C示出在过渡层表面生长第一CVD金刚石膜作为临时载体;
图2D示出去除GaN原始衬底;
图2E示出在GaN形核面镀制第二过渡层;
图2F示出在过渡层表面生长第二CVD金刚石膜作为导热衬底;
图2G示出选择性刻蚀去除作为临时载体的第一CVD金刚石膜。
具体实施方式
以下结合附图和实施例对本发明的技术方案做进一步的说明。
金刚石基GaN半导体材料具有非常显著的性能优势,实现该结构的方式主要是衬底转移替换。常规转移普遍用到键合Si晶圆作为临时载体,该方法既对键合工艺及设备要求极高,且在后续金刚石膜生长过程中易出现键合脱离的问题。这种键合技术一是对于表面处理要求非常高,键合率不够理想,二是这种键合技术很难抵御后续的CVD金刚石膜生长环境,造成键合脱落,损坏GaN生长面。本方案中,摈弃真空键合转移工艺,直接在GaN正面生长CVD金刚石膜作为临时载体,然后将GaN原始衬底去除,随后在介电层的保护下再在GaN背面生长另一层CVD金刚石膜;随后,通过电化学选择性刻蚀技术,将第一层CVD金刚石膜去除,获得完整的金刚石基GaN结构。
参照图1以及图2A至2G,本发明的采用双金刚石层实现GaN原始衬底转移的方法具体实施步骤如下:
在步骤101中,选择带有衬底的GaN晶圆,结构如图2A所示。依次采用丙酮、酒精及去离子水清洗,风干,原始衬底可以是Si基、蓝宝石基或SiC基。
在步骤102中,采用真空镀膜技术在GaN晶圆生长面表面镀制第一过渡层1,如图2B所示。该过渡层既起到抵御等离子体轰击、保护GaN的作用,同时又有利于CVD金刚石膜的生长。真空镀膜技术包括磁控溅射、低压化学气相沉积、激光脉冲沉积技术等真空镀膜技术。该第一过渡层可为Si、Ti、W、Mo等材质,或者SiO2,TiC等化合物,或者其中的复合。过渡层厚度1-3μm。
在步骤103中,采用化学气相沉积技术,在带有第一过渡层的GaN表面生长一定厚度的第一CVD金刚石膜,作为临时载体,如图2C所示。化学气相沉积方法包括微波CVD,热丝CVD,以及其它CVD金刚石镀膜技术。金刚石膜厚度100-300微米,沉积温度600-800℃。
在步骤104中,采用化学腐蚀或者激光剥离技术,将GaN原始衬底去除,留下带有金刚石临时载体的GaN薄膜,GaN背面(形核面)露出,如图2D所示。化学方法包括采用湿法腐蚀剥离,采用KrF激光剥离等技术。
在步骤105中,再次清洗样品后,采用真空镀膜技术在GaN背面镀制第二过渡层2,结构示意如图2E所示。该过渡层作为介电材料同样具有保护GaN薄膜,并有利于CVD金刚石膜生长的作用。真空镀膜技术包括磁控溅射、低压化学气相沉积、激光脉冲沉积技术等真空镀膜技术。该过渡层材料为SiN,AlN以及SiC等材料,或者其组合体系。过渡层厚度≤50nm。
在步骤106中,采用化学气相沉积在镀有第二过渡层的GaN背面生长第二 CVD金刚石膜,形成如图2F所示双金刚石层结构。该化学气相沉积技术包括微波CVD,热丝CVD以及其它CVD金刚石镀膜技术,金刚石膜厚度100-300微米,沉积温度700-800℃。
在步骤107中,采用湿法刻蚀或者电化学辅助选择性刻蚀第一过渡层,同时不影响第二过渡层,实现作为临时载体的金刚石膜的剥离,获得金刚石基GaN 结构,如图2G所示。湿法刻蚀包括采用HF酸、硫酸、硝酸等溶液腐蚀,或者采用铬酸溶液在电化学作用下选择性刻蚀第一层过渡层。
本发明还提供一种金刚石基GaN半导体材料的制备方法,包括以下步骤:
1.在原始衬底上沉积GaN层,原始衬底为Si基、蓝宝石基或者SiC基;
2.采用根据以上任一方面所述的GaN原始衬底转移方法进行衬底转移,形成金刚石基GaN半导体材料。
本发明还提供一种金刚石基GaN半导体材料,金刚石基GaN半导体材料采用根据以上任一方面所述的金刚石基GaN半导体材料的制备方法获得。
实施例
1.选择10×10mmSi基GaN晶圆,Si基片厚度0.5mm。依次采用丙酮、酒精及去离子水超声清洗,吹风机风干;
2.将衬底放置于磁控溅射镀膜系统中,抽真空至5×10-4Pa以下真空度。在Ar溅射气氛下,以Ti材料为靶材开始在GaN表面溅射纯Ti过渡层。溅射功率 400W,溅射腔压3.0×10-1Pa,自偏压700V,溅射时长3h,溅射后Ti过渡层厚度为2μm;
3.取出上述样品,将其放置于微波等离子体化学气相沉积系统中,抽真空至0.1Pa以下,开启微波等离子体CVD系统,在Ti过渡层表面镀制CVD金刚石膜。微波功率3kw,衬底温度700℃,甲烷浓度3%,沉积时间40h,金刚石膜厚度200微米;
4.取出上述样品,先采用机械研磨的方式将原始Si衬底研磨一部分至 50-100微米厚度,然后将剩余Si腐蚀掉,使得GaN的背面露出;
5.再次清洗样品后,采用磁控镀膜系统,在GaN背面镀制SiN过渡层(即介电层)。溅射气氛为Ar,N2,两者比例1:3,溅射功率150W,溅射腔压5.0× 10-1Pa,溅射时长20min。SiN过渡层厚度约50nm;
6.将上述样品置于微波等离子体CVD系统中,SiN面朝上,镀制第二层CVD 金刚石膜。微波功率3kW,甲烷浓度2.5%,衬底温度750℃,沉积时间50h。金刚石膜厚度约200微米;
7.将样品取出放置于盛有HCl酸的烧杯中密封,水浴加热至60摄氏度,直至镀有Ti过渡层的金刚石层发生脱离,从而留下带有金刚石基的GaN结构。
综上所述,本发明的采用双金刚石层实现GaN原始衬底转移的方法及应用,减少了Si晶圆键合工艺的引入,同时由于正反两面都是金刚石膜,能有效缓解 GaN薄膜变形从而发生开裂的问题,可有效提升金刚石膜替代GaN原始衬底的质量和效率。
尽管本发明的内容已经通过上述优选实施例作了详细介绍,但应当认识到上述的描述不应被认为是对本发明的限制。在本领域技术人员阅读了上述内容后,对于本发明的多种修改和替代都将是显而易见的。因此,本发明的保护范围应由所附的权利要求来限定。
Claims (10)
1.一种采用双金刚石层实现GaN原始衬底转移的方法,其特征在于,所述方法采用双金刚石层,既利用CVD金刚石膜作为临时载体,同时又利用CVD金刚石膜作为转移衬底,由于正反两面都是金刚石膜,有效缓解GaN薄膜变形从而发生开裂的问题,所述方法包括:
步骤1,选择一种GaN晶圆,所述GaN晶圆具有原始衬底;
步骤2,在GaN晶圆生长面表面生长第一过渡层;
步骤3,在所述第一过渡层表面沉积第一CVD金刚石膜,作为临时载体;
步骤4,采用化学腐蚀或者激光剥离技术,将GaN原始衬底去除,GaN露出形核面;
步骤5,在GaN晶圆形核面表面生长第二过渡层,作为介电层;
步骤6.在所述第二过渡层表面沉积第二CVD金刚石膜,作为GaN的导热衬底;
步骤7,选择性刻蚀所述第一过渡层,保留第二过渡层,使得作为临时载体的第一CVD金刚石膜剥离,作为导热衬底的第二CVD金刚石膜保留,从而实现金刚石膜替代原始衬底。
2.根据权利要求1所述的方法,其特征在于,在步骤1中,所述原始衬底为Si基、蓝宝石基或者SiC基。
3.根据权利要求1所述的方法,其特征在于,采用真空镀膜技术在GaN晶圆生长面表面和形核面表面生长第一过渡层和第二过渡层。
4.根据权利要求1所述的方法,其特征在于,在步骤2中,所述第一过渡层厚度大于等于1μm,需达到均匀致密的效果,且所述过渡层的材质为Si、Ti、Mo、W单质元素,或者SiO2、TiC化合物,或者前述各项的复合。
5.根据权利要求1所述的方法,其特征在于,所述第二过渡层的厚度小于等于50nm。
6.根据权利要求1所述的方法,其特征在于,采用等离子体化学气相沉积系统沉积第一金刚石膜和第二金刚石膜,且所述第一金刚石膜和第二金刚石膜的厚度均为100-300微米。
7.根据权利要求1所述的方法,其特征在于,采用化学腐蚀或者电化学辅助刻蚀技术来选择性刻蚀所述第一过渡层。
8.一种金刚石基GaN半导体材料的制备方法,其特征在于,包括以下步骤:
步骤1,在原始衬底上沉积GaN层;
步骤2,采用根据权利要求1至7中任一项所述的GaN原始衬底转移方法进行衬底转移,形成金刚石基GaN半导体材料。
9.根据权利要求8所述的制备方法,其特征在于,在步骤1中,所述原始衬底为Si基、蓝宝石基或者SiC基。
10.一种金刚石基GaN半导体材料,其特征在于,所述金刚石基GaN半导体材料采用根据权利要求8或9所述的金刚石基GaN半导体材料的制备方法获得。
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CN112376034A (zh) * | 2020-10-26 | 2021-02-19 | 北京科技大学 | 一种带光学增透膜的金刚石制备方法 |
CN116705594A (zh) * | 2023-08-02 | 2023-09-05 | 中国科学院微电子研究所 | 一种薄膜半导体与金刚石复合衬底及其制造方法 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104756245A (zh) * | 2012-10-26 | 2015-07-01 | 六号元素技术美国公司 | 具有提高的可靠性和工作寿命的半导体器件及其制造方法 |
US20170133295A1 (en) * | 2015-11-11 | 2017-05-11 | Qorvo Us, Inc. | Semiconductor device with high thermal conductivity substrate and process for making the same |
CN106783998A (zh) * | 2016-12-16 | 2017-05-31 | 中国电子科技集团公司第五十五研究所 | 一种基于金刚石衬底的氮化镓高电子迁移率晶体管及其制备方法 |
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-
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104756245A (zh) * | 2012-10-26 | 2015-07-01 | 六号元素技术美国公司 | 具有提高的可靠性和工作寿命的半导体器件及其制造方法 |
US20170133295A1 (en) * | 2015-11-11 | 2017-05-11 | Qorvo Us, Inc. | Semiconductor device with high thermal conductivity substrate and process for making the same |
CN106783998A (zh) * | 2016-12-16 | 2017-05-31 | 中国电子科技集团公司第五十五研究所 | 一种基于金刚石衬底的氮化镓高电子迁移率晶体管及其制备方法 |
Non-Patent Citations (2)
Title |
---|
D. I. BABIĆ 等: "GaN-on-diamond field-effect transistors: from wafers to amplifier modules", 《THE 33RD INTERNATIONAL CONVENTION MIPRO》 * |
HUARUI SUN 等: "Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications", 《APPLIED PHYSICS LETTERS》 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2020098258A1 (zh) * | 2018-11-12 | 2020-05-22 | 北京科技大学 | 一种采用双金刚石层实现GaN原始衬底转移的方法及应用 |
CN112376034A (zh) * | 2020-10-26 | 2021-02-19 | 北京科技大学 | 一种带光学增透膜的金刚石制备方法 |
CN112376034B (zh) * | 2020-10-26 | 2021-09-07 | 北京科技大学 | 一种带光学增透膜的金刚石制备方法 |
CN116705594A (zh) * | 2023-08-02 | 2023-09-05 | 中国科学院微电子研究所 | 一种薄膜半导体与金刚石复合衬底及其制造方法 |
CN116705594B (zh) * | 2023-08-02 | 2023-10-20 | 中国科学院微电子研究所 | 一种薄膜半导体与金刚石复合衬底及其制造方法 |
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