CN109637569A - A kind of magnetic memory cell and its method for writing data - Google Patents
A kind of magnetic memory cell and its method for writing data Download PDFInfo
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- CN109637569A CN109637569A CN201811403215.2A CN201811403215A CN109637569A CN 109637569 A CN109637569 A CN 109637569A CN 201811403215 A CN201811403215 A CN 201811403215A CN 109637569 A CN109637569 A CN 109637569A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
Abstract
The present invention discloses a kind of magnetic memory cell and its method for writing data, and the magnetic tunnel-junction with perpendicular magnetic anisotropic is fabricated in above strong Quantum geometrical phase layer, is coated with electrode respectively at four ports of strong Quantum geometrical phase layer.The surface of magnetic tunnel-junction is made into the unequal shape of major and minor axis, the long axis of the surface shape of magnetic tunnel-junction and the longitudinal axis of strong Quantum geometrical phase layer neither mutually coincide, also not orthogonal, but it is angled relative to each other, slanted angle had both been not equal to 0 degree, also it is not equal to 90 degree, but between 0 degree and 90 degree.To realize data write operation using spin(-)orbit square, electric current need to be applied in strong Quantum geometrical phase layer, the path of electric current can be along the longitudinal axis or horizontal axis of strong Quantum geometrical phase layer, and there are two types of selections altogether.The final Resistance states of magnetic tunnel-junction are solely dependent upon the path of applied electric current, unrelated with the positive negative direction of electric current.Method for writing data of the present invention is not necessarily to magnetic field, and has the advantages that high speed and low-power consumption.
Description
[technical field]
The present invention relates to a kind of magnetic memory cell and its method for writing data, belong to non-volatile memories and logic technology
Field.
[background technique]
The main performance bottleneck that the memory and logic computing unit for being currently based on conventional semiconductor processing are faced includes
Two aspects: firstly, transistor drain current is constantly soaring with the diminution of characteristic size, make quiescent dissipation institute in total system power consumption
The ratio accounted for increasingly increases；Secondly, in typical counting system framework, between various types of memory, memory and logic calculation
Access speed between unit seriously mismatches, and significantly reduces data processing bandwidth.Emerging magnetic random access storage
Device (Magnetic random access memory, MRAM) has both non-volatile, low-power consumption, high speed and virtually limitless erasable
Etc. advantages, be expected to become next-generation general-purpose storage, and then solve above-mentioned two big performance bottleneck.
In the development course of MRAM, data writing mode experienced multiple technological progress, also becomes and measures MRAM
The main indicator of performance.In a mram, the Primary Component for realizing non-volatile memories is magnetic tunnel-junction (Magnetic tunnel
Junction, MTJ), its nuclear structure includes two ferromagnetic layers (being referred to as free layer and pinning layer) and is clipped in therein
Barrier layer.Wherein, the direction of magnetization of pinning layer immobilizes, but the direction of magnetization of free layer can be set to and pinning
Layer is parallel or antiparallel, and then causes magnetic tunnel-junction that low resistance state or high-resistance state is presented, this is that MRAM can store 1 bit number
According to principle where.Therefore, the data write operation of MRAM is achieved by the way that the direction of magnetization of free layer is arranged.
The MRAM of early stage realizes data write-in using magnetic field, but required electric current is higher, and can not be with magnetic tunnel-junction ruler
Very little diminution and reduce, therefore application prospect is limited.Second generation MRAM uses current induced spin-transfer torque (Spin
Transfer torque, STT) realize data write-in, solve drawback present in above-mentioned magnetic field writing mode, but STT-
The writing process of MRAM needs to undergo hatching delay (Incubation delay), seriously restricts writing speed, moreover, write-in electricity
Stream is directly over magnetic tunnel-junction with electric current is read, and reading interference (Read disturb) and potential barrier is easily caused to puncture
The problems such as (Barrier breakdown).Spin(-)orbit square (the Spin orbit that these disadvantages of STT-MRAM are proposed in the recent period
Torque, SOT) Writing Technology solved, especially, there is perpendicular magnetic anisotropic for what is generallyd use at present
For the magnetic tunnel-junction of (Perpendicular magnetic anisotropy, PMA), the writing speed of SOT-MRAM is expected to
Reach subnanosecond grade, is the good candidate for replacing tradition caching.But to realize that the certainty of PMA-MTJ state is turned over using SOT
Turn, generally needs to apply additional magnetic field taking human as ground and destroy system symmetry.However, the use in magnetic field will make MRAM circuit
Design more complicates, and causes additional area and power dissipation overhead.Therefore, how to be realized under no magnetic field condition using SOT
The certainty of PMA-MTJ state is overturn, and is one of the main bugbear that current SOT-MRAM faces.
[summary of the invention]
It is an object of the invention to propose a kind of magnetic memory cell and its method for writing data, in above-mentioned background
Existing PMA-SOT-MRAM " externally-applied magnetic field is needed just to be able to achieve certainty write-in " this drawback mentioned.The present invention uses PMA-
MTJ constructs magnetic memory cell, destroys system symmetry by changing device shape and layout, because can be sharp without magnetic field
The certainty write-in of data is realized with spin(-)orbit square.In addition, method for writing data proposed by the invention can simplify MRAM
The control unit of circuit, and reduce data write-in power consumption.
The technical scheme is that a kind of magnetic memory cell, which includes: strong Quantum geometrical phase layer
The material layer of strong Quantum geometrical phase (specially one with), magnetic tunnel-junction, first electrode, second electrode, third electrode, the
Four electrodes and the 5th electrode.Wherein, magnetic tunnel-junction is made on above strong Quantum geometrical phase layer.First electrode, second electrode,
Third electrode and the 4th electrode are made at four ports of strong Quantum geometrical phase layer.5th electrode is made on magnetic channel
The side of tying.
Wherein, strong Quantum geometrical phase layer often forms an axis with respect to two electrodes at port, therefore shares two
Axis is referred to as the longitudinal axis and horizontal axis of strong Quantum geometrical phase layer, and the longitudinal axis and horizontal axis are orthogonal；The strong spin rail
Road coupling layer can apply electric current along the above-mentioned longitudinal axis and two paths of horizontal axis, and the electric current along this two paths can produce spin
Orbital moment.The surface of magnetic tunnel-junction is made into the unequal shape of major and minor axis；The long axis of the surface shape of magnetic tunnel-junction and it is strong from
The longitudinal axis of rotation orbit coupling layer neither mutually coincides, also not orthogonal, but is angled relative to each other, and slanted angle had both been not equal to 0 degree,
Also it is not equal to 90 degree, but between 0 degree and 90 degree.
Wherein, preferably, strong Quantum geometrical phase layer is heavy metal or antiferromagnet or topological insulator material；Institute
The heavy metal stated includes platinum Pt, tantalum Ta, tungsten W；The antiferromagnet includes compound iridium manganese IrMn, platinum manganese PtMn；It is described
Topological insulator material include compound bismuth selenium BiSe, bismuth antimony BiSb；The proportion content of each element can in above compound
With difference.
Wherein, strong Quantum geometrical phase layer with a thickness of 0~20nm.
Wherein, the top area of strong Quantum geometrical phase layer is greater than the floor space of magnetic tunnel-junction.
Wherein, preferably, first electrode, second electrode, third electrode and the 4th electrode thickness and strong spin(-)orbit
The thickness of coupling layer is identical.5th electrode with a thickness of 10~200nm.
Wherein, the magnetic tunnel-junction is at least made of four layers of substance, including the first feeromagnetic metal, oxide, the second iron
Magnetic metal and synthetic anti-ferromagnetic layer.
Wherein, the magnetic tunnel-junction at least has there are two types of resistance states, and resistance value depends on the first feeromagnetic metal and the
The two metallic ferromagnetic direction of magnetizations.
Wherein, the second metallic ferromagnetic direction of magnetization immobilizes, and the first metallic ferromagnetic direction of magnetization can be by writing
Enter operation to be changed.
Wherein, the magnetic tunnel-junction has perpendicular magnetic anisotropic, that is, at steady state, the first feeromagnetic metal and the
The two metallic ferromagnetic direction of magnetizations are vertically.
Wherein, the surface of the magnetic tunnel-junction is made into the unequal shape of major and minor axis, for example, ellipse, rectangle or water chestnut
Shape.
The method for writing data of a kind of magnetic memory cell of the present invention, by applying in strong Quantum geometrical phase layer
Electric current generates spin orbital moment and realizes.It the path of the electric current can be along the longitudinal axis or horizontal axis of strong Quantum geometrical phase layer, altogether
There are two types of selections.The final Resistance states of magnetic tunnel-junction are solely dependent upon the path of electric current, unrelated with the positive negative direction of electric current.That is,
When executing data write operation, if it is low to which magnetic tunnel-junction to be written as to apply electric current along the longitudinal axis of strong Quantum geometrical phase layer
Otherwise Resistance states then apply electric current along the horizontal axis of strong Quantum geometrical phase layer and magnetic tunnel-junction are written as high-resistance state, or also
It can.
A kind of method for writing data of magnetic memory cell of the present invention, sense of current needed for data write-in can
To be set as immobilizing.
The method for writing data of a kind of magnetic memory cell of the present invention, without additional in data writing operation
Magnetic field.
The method for reading data of a kind of magnetic memory cell of the present invention, by the resistance states for judging magnetic tunnel-junction
It is achieved.Without loss of generality, be exemplified below: if magnetic tunnel-junction is in high-resistance state, the data stored are judged as
‘0'；If magnetic tunnel-junction is in low resistance state, the data stored are judged as ' 1 '.Or vice versa.
The invention proposes a kind of magnetic memory cell and its method for writing data, compared to standard STT-MRAM and
SOT-MRAM has following advantage:
Magnetic memory cell and its method for writing data of the present invention, can be under conditions of being not necessarily to magnetic field using electricity
The state write-in that rotation orbital moment realizes vertical magnetic tunnel-junction is born from miscarriage, is conducive to the simplification and its integrated level of MRAM circuit structure
Raising.Moreover, its writing speed of theoretical proof up to subnanosecond grade, is conducive to improve data processing bandwidth and the reduction of MRAM
Power consumption.
Magnetic memory cell and its method for writing data of the present invention, needed for sense of current may be configured as it is solid
Fixed constant, access control transistor is not exposed to source-electrode degradation effect (Source degeneration), and in traditional STT-
In MRAM or SOT-MRAM, electric current needed for data write operation be it is two-way, access control transistor is by serious source
Pole degradation effect.
Magnetic memory cell and its method for writing data of the present invention, data value to be written are solely dependent upon electric current
Path, it is unrelated with current direction, be conducive to the control module for simplifying circuit.Moreover, proposed by the present invention " determine according to current path
This unique writing mode of fixed data value to be written ", the design for MRAM or magnetic logic unit provide new thinking.
[Detailed description of the invention]
Fig. 1 is a kind of magnetic memory cell structural schematic diagram of the present invention, wherein Figure 1A~Figure 1B is with oval magnetic tunnel-junction
For, Figure 1A is stereoscopic schematic diagram, and Figure 1B is the top view along z-axis.By taking rectangle magnetic tunnel-junction as an example, Fig. 1 C is Fig. 1 C~Fig. 1 D
Stereoscopic schematic diagram, Fig. 1 D are the top view along z-axis.
Fig. 2 is a kind of method for writing data schematic diagram of magnetic memory cell of the present invention.Wherein Fig. 2A and Fig. 2 C is described
Free layer magnetization vector is overturn to process vertically upward, Fig. 2 B and Fig. 2 D, which are described, stops free layer magnetization vector
In the process of vertical downward direction.
Fig. 3 is a kind of data write operation schematic diagram of magnetic memory cell of the present invention, wherein Fig. 3 A~Fig. 3 B, Fig. 3 C~
Fig. 3 D, Fig. 3 E~Fig. 3 F, Fig. 3 G~Fig. 3 H respectively correspond a kind of alternative embodiment, amount to four kinds of embodiments.Wherein scheme
3A, Fig. 3 C, Fig. 3 E and Fig. 3 G are stereoscopic schematic diagram, and Fig. 3 B, Fig. 3 D, Fig. 3 F and Fig. 3 H are the top view along z-axis.
Fig. 4 is signal waveforms corresponding to Fig. 3 A~Fig. 3 B embodiment and magnetic tunnel-junction resistance variations schematic diagram.Wherein,
Fig. 4 A and Fig. 4 B respectively correspond the situation that magnetic tunnel-junction original state is low resistance state or high-resistance state.
Fig. 5 is signal waveforms corresponding to Fig. 3 C~Fig. 3 D embodiment and magnetic tunnel-junction resistance variations schematic diagram.Wherein,
Fig. 5 A and Fig. 5 B respectively correspond the situation that magnetic tunnel-junction original state is low resistance state or high-resistance state.
Fig. 6 is signal waveforms corresponding to Fig. 3 E~Fig. 3 F embodiment and magnetic tunnel-junction resistance variations schematic diagram.Wherein,
Fig. 6 A and Fig. 6 B respectively correspond the situation that magnetic tunnel-junction original state is low resistance state or high-resistance state.
Fig. 7 is signal waveforms corresponding to Fig. 3 G~Fig. 3 H embodiment and magnetic tunnel-junction resistance variations schematic diagram.Wherein,
Fig. 7 A and Fig. 7 B respectively correspond the situation that magnetic tunnel-junction original state is low resistance state or high-resistance state.
Parameter definition in Fig. 1~7 are as follows:
Corresponding three reference axis of x, y, z three-dimensional cartesian coordinate system, definition z-axis are vertical direction, that is, magnetic in the present invention
The anisotropy axis of tunnel knot is along the z-axis direction
The last 1 Quantum geometrical phase layer
2 first feeromagnetic metals
3 oxides
4 second feeromagnetic metals
5 synthetic anti-ferromagnetic layers
6 magnetic tunnel-junctions
7 first electrodes
8 second electrodes
9 third electrodes
10 the 4th electrodes
11 the 5th electrodes
Axis where current path between 12 first electrodes and third electrode is set to strong spin without loss of generality
The longitudinal axis of orbit coupling layer
Axis where current path between 13 second electrodes and the 4th electrode, due to above by 12 be set to it is strong from
Revolve the longitudinal axis of orbit coupling layer, the then horizontal axis for being set to strong Quantum geometrical phase layer for 13 herein
Axis where the long axis of 14 magnetic tunnel-junction surface shapes
Axis where the short axle of 15 magnetic tunnel-junction surface shapes
16 flow to the electric current of third electrode from first electrode
17 as caused by electric current 16 the upper surface of strong Quantum geometrical phase layer spin accumulation polarization vector
18 flow to the electric current of second electrode from the 4th electrode
19 as caused by electric current 18 the upper surface of strong Quantum geometrical phase layer spin accumulation polarization vector
20 flow to the electric current of first electrode from third electrode
21 flow to the electric current of the 4th electrode from second electrode
The t time
tiMoment, wherein i=1,2,3,4
The resistance value of R magnetic tunnel-junction
RHMagnetic tunnel-junction is in resistance value when high-resistance state
RLMagnetic tunnel-junction is in resistance value when low resistance state
I16The current value of third electrode is flowed to from first electrode
IC1When the path between first electrode and third electrode applies electric current, to complete needed for data write operation
Critical electric current value
DW1When the path between first electrode and third electrode applies electric current, to complete needed for data write operation
Time delay
I18The current value of second electrode is flowed to from the 4th electrode
IC2When the path between second electrode and the 4th electrode applies electric current, to complete needed for data write operation
Critical electric current value
DW2When the path between second electrode and the 4th electrode applies electric current, to complete needed for data write operation
Time delay
I20The current value of first electrode is flowed to from third electrode
I21The current value of the 4th electrode is flowed to from second electrode
[specific embodiment]
Referring to attached drawing, substantive distinguishing features of the invention are further illustrated.Attached drawing is schematic diagram, each function being directed to
The non-actual size of thickness in layer or region, resistance value, current value and time-delay value nor actual value in operating mode.
Detailed exemplary embodiment is disclosed, specific CONSTRUCTED SPECIFICATION and function detail are only to indicate to describe
The purpose of example embodiment, therefore, can by it is many it is selectable in the form of implement the present invention, and the present invention not it should be understood that
To be limited only to the example embodiment herein proposed, but all changes fallen within the scope of the present invention, equivalence should be covered
Object and refill.
The invention proposes a kind of magnetic memory cell and its method for writing data, both can be used for constructing magnetic random and have deposited
Access to memory can be used for design magnetic logic circuit.
Fig. 1 is a kind of magnetic memory cell structural schematic diagram of the present invention, wherein Figure 1A~Figure 1B is with oval magnetic tunnel-junction
For, Figure 1A is stereoscopic schematic diagram, and Figure 1B is the top view along z-axis.By taking rectangle magnetic tunnel-junction as an example, Fig. 1 C is Fig. 1 C~Fig. 1 D
Stereoscopic schematic diagram, Fig. 1 D are the top view along z-axis.
A kind of magnetic memory cell of the present invention, including strong Quantum geometrical phase layer 1, magnetic tunnel-junction 6, first electrode 7, second
Electrode 8, third electrode 9, the 4th electrode 10 and the 5th electrode 11.Magnetic tunnel-junction 6 is made on the upper of strong Quantum geometrical phase layer 1
Side.First electrode 7, second electrode 8, third electrode 9 and the 4th electrode 10 are made on four ends of strong Quantum geometrical phase layer 1
At mouthful.5th electrode 11 is made on the top of magnetic tunnel-junction 6.
Magnetic tunnel-junction 6 is at least made of four layers of substance, including the first feeromagnetic metal 2, oxide 3,4 and of the second feeromagnetic metal
Synthetic anti-ferromagnetic layer 5.
Magnetic tunnel-junction 6 at least has there are two types of resistance states, and resistance value depends on the first feeromagnetic metal 2 and the second ferromagnetic gold
Belong to 4 direction of magnetization.If the first feeromagnetic metal 2 is consistent with the direction of magnetization of the second feeromagnetic metal 4, the electricity of magnetic tunnel-junction 6
Resistance value is smaller, and magnetic tunnel-junction 6 at this time is claimed to be in low resistance state.Conversely, if the two is contrary, the resistance of magnetic tunnel-junction 6
It is worth larger, magnetic tunnel-junction 6 is in high-resistance state.
Preferably, the direction of magnetization of the second feeromagnetic metal 4 immobilizes, the direction of magnetization of the first feeromagnetic metal 2 can
It is changed by write operation.
Magnetic tunnel-junction 6 has perpendicular magnetic anisotropic, that is, at steady state, the first feeromagnetic metal 2 and the second ferromagnetic gold
The direction of magnetization of category 4 is vertically (i.e. z-axis direction).
The surface of magnetic tunnel-junction 6 is made into the unequal shape of major and minor axis, for example, ellipse, rectangle or diamond shape.Fig. 1 with
For ellipse and rectangle.
Strong Quantum geometrical phase layer 1 can be applied electric current along two paths, and a paths are along strong Quantum geometrical phase
Two electrode, that is, first electrodes 7 and third electrode 9 at the opposite port of layer 1 are formed by axis 12, and another paths are along the
Two electrodes 8 and the 4th electrode 10 are formed by axis 13, without loss of generality, axis 12 are set to strong Quantum geometrical phase layer 1
Axis 13, then is set to the horizontal axis of strong Quantum geometrical phase layer 1 by the longitudinal axis, and the longitudinal axis 12 and horizontal axis 13 are orthogonal.Along this two roads
The electric current of diameter can produce spin orbital moment.
The long axis 14 of the surface shape of magnetic tunnel-junction 6 and the longitudinal axis 12 of strong Quantum geometrical phase layer 1 neither mutually coincide,
Not orthogonal, but be angled relative to each other, slanted angle had both been not equal to 0 degree, was also not equal to 90 degree, but between 0 degree and 90 degree it
Between.
Device used in the present invention is the side by using traditional molecular beam epitaxy, atomic layer deposition or magnetron sputtering
Method plates each layer substance on substrate according to sequence from top to bottom, then carries out the processing of the conventional nanoscale devices such as photoetching, etching
Technique is prepared.
Device manufacturing process used in the present invention is integrated by traditional semiconductor production backend process.
Preferably, strong Quantum geometrical phase layer 1 with a thickness of 0~20nm.
Preferably, the top area of strong Quantum geometrical phase layer 1 is greater than the floor space of magnetic tunnel-junction 6, the bottom of magnetic tunnel-junction 6
Face shape is embedded in completely among the top surface shape of strong Quantum geometrical phase layer 1.
Preferably, the first feeromagnetic metal 2 with a thickness of 0~3nm, oxide 3 with a thickness of 0~2nm, the second ferromagnetic gold
Belong to 4 with a thickness of 0~3nm, synthetic anti-ferromagnetic layer 5 with a thickness of 0~20nm, first electrode 7, second electrode 8, third electrode 9
It is identical as the thickness of strong Quantum geometrical phase layer 1 with the thickness of the 4th electrode 10, the 5th electrode 11 with a thickness of 10~200nm.
Preferably, the strong Quantum geometrical phase layer 1 is heavy metal or antiferromagnet or topological insulator material；Institute
The heavy metal stated includes platinum Pt, tantalum Ta, tungsten W；The antiferromagnet includes compound iridium manganese IrMn, platinum manganese PtMn；It is described
Topological insulator material include compound bismuth selenium BiSe, bismuth antimony BiSb；The proportion content of each element can in above compound
With difference.
Preferably, the first electrode 7, second electrode 8, third electrode 9, the 4th electrode 10 and the 5th electrode 11
For one of tantalum Ta, aluminium Al or copper Cu.
Preferably, first feeromagnetic metal 2 refers to mixed-metal materials ferro-cobalt CoFe, ferro-cobalt boron CoFeB or ferronickel
One of NiFe, the proportion content of each element can be different in these mixed-metal materials.
Preferably, the oxide 3 refers to magnesia MgO or aluminium oxide Al2O3One of, for generating tunnelling magnetic
Inhibition effect.
Preferably, second feeromagnetic metal 4 refers to mixed-metal materials ferro-cobalt CoFe, ferro-cobalt boron CoFeB or ferronickel
One of NiFe, the proportion content of each element can be different in these mixed-metal materials.
Preferably, the synthetic anti-ferromagnetic layer 5, refers to one of following mixed layer: by tantalum Ta/ cobalt platinum multilayer film
[Co/Pt]n/ ruthenium Ru/ cobalt platinum multilayer film [Co/Pt]mThe mixed layer of composition, or by tantalum Ta/ cobalt palladium multilayer film [Co/Pd]n/ ruthenium
Ru/ cobalt palladium multilayer film [Co/Pd]mThe mixed layer of composition, or the mixed layer being made of ruthenium Ru/ ferro-cobalt CoFe/ platinum manganese PtMn, or
The mixed layer that person is made of ruthenium Ru/ ferro-cobalt boron CoFeB/ platinum manganese PtMn, or be made of ruthenium Ru/ ferro-cobalt CoFe/ iridium manganese IrMn
Mixed layer, or the mixed layer being made of ruthenium Ru/ ferro-cobalt boron CoFeB/ iridium manganese IrMn；That is Ta/ [Co/Pt]n/Ru/[Co/Pt]m,
Or Ta/ [Co/Pd]n/Ru/[Co/Pd]mOr Ru/CoFe/PtMn or Ru/CoFeB/PtMn or Ru/CoFe/IrMn or Ru/
CoFeB/IrMn, wherein the proportion content of each element can be different in mixed-metal materials or compound, the value of number of stories m and n
It can be different.
Fig. 2 is a kind of method for writing data schematic diagram of magnetic memory cell of the present invention, this sentences oval magnetic tunnel-junction
For.It is emphasized that the principle that Fig. 2 is illustrated is equally applicable to other magnetic channels with unequal length axis shape
Knot, such as rectangle magnetic tunnel-junction or diamond shape magnetic tunnel-junction.The data writing process of magnetic memory cell, essence are first ferromagnetic
The magnetized state switching process of metal 2, this be Fig. 2 the content of weight analysis.Without loss of generality, it is assumed herein that when original state
The direction of magnetization of first feeromagnetic metal 2 is along vertically downward, i.e. ,-z-axis direction.Fig. 2A and Fig. 2 B is top view of the device along z-axis.
In fig. 2, it along the longitudinal axis 12 (i.e. y-axis) of strong Quantum geometrical phase layer 1, is applied from first electrode 7 to third electrode 9
Add electric current 16, then the electric current is through too strong Quantum geometrical phase layer 1, and surface is generated along 17 direction of vector (i.e.-x-axis direction) on it
Polarized spin accumulation, and then spin(-)orbit square is induced to act on the first feeromagnetic metal 2.On the other hand, due to magnetic tunnel-junction 6
Surface shape is made into the unequal ellipse of major and minor axis, therefore can also generate shape anisotropy field in x-y plane.Due to ellipse
The polarization vector 17 of round long axis 14 and spin accumulation is in a certain angle, therefore the symmetry of system is broken, the first ferromagnetic gold
Belonging to 2 magnetized state can overturn to being determined property under conditions of being not necessarily to externally-applied magnetic field.When electric current 16 is greater than IC1, and electric current 16
Duration be greater than DW1When, under the collective effect of spin(-)orbit square and shape anisotropy field, the magnetic of the first feeromagnetic metal 2
Changing direction can be flipped to vertically upward, i.e. ,+z-axis direction.
Fig. 2 C illustrates the normalization magnetization vector movement locus schematic diagram of the first feeromagnetic metal 2, corresponds to shown in Fig. 2A
Situation.By Fig. 2 C as it can be seen that magnetization vector is overturn from the direction-z to the direction+z.
In fig. 2b, it along the horizontal axis 13 (i.e. x-axis) of strong Quantum geometrical phase layer 1, is applied from the 4th electrode 10 to second electrode 8
Add electric current 18, then the electric current is through too strong Quantum geometrical phase layer 1, and surface is generated along 19 direction of vector (i.e.-y-axis direction) on it
Polarized spin accumulation, and then spin(-)orbit square is induced to act on the first feeromagnetic metal 2.On the other hand, due to magnetic tunnel-junction 6
Surface shape is made into the unequal ellipse of major and minor axis, therefore can also generate shape anisotropy field in x-y plane.Due to ellipse
The polarization vector 19 of round long axis 14 and spin accumulation is in a certain angle, therefore the symmetry of system is broken, the first ferromagnetic gold
Belonging to 2 magnetized state can overturn to being determined property under conditions of being not necessarily to externally-applied magnetic field.It is emphasized that the rail that spins at this time
Correlation between road square and shape anisotropy field, with situation shown in Fig. 2A on the contrary, therefore, the first feeromagnetic metal 2 is most
The whole direction of magnetization is also opposite with situation shown in Fig. 2A, that is, when the direction of magnetization finally will stay on original state vertically downward,
I.e.-z-axis direction.
Fig. 2 D illustrates the normalization magnetization vector movement locus schematic diagram of the first feeromagnetic metal 2, corresponds to shown in Fig. 2 B
Situation.By Fig. 2 D as it can be seen that magnetization vector finally remains in the direction-z in the initial state along the direction-z.
It should be understood that from the symmetry of spin(-)orbit square: in fig. 2, if the direction of electric current 16 is overturned,
That is, be changed to flow to first electrode 7 from third electrode 9, then the direction of magnetization of the first feeromagnetic metal 2 be still reversed for vertically to
On, i.e. ,+z-axis direction；In fig. 2b, if the direction of electric current 18 is overturned, that is, it is changed to flow to the 4th electrode 10 from second electrode 8,
Then the direction of magnetization of the first feeromagnetic metal 2 remains in vertically downward, i.e. ,-z-axis direction.Therefore, the first feeromagnetic metal 2 is most
The whole direction of magnetization is solely dependent upon the path of applied electric current, unrelated with the positive negative direction of electric current.
In conclusion a kind of method for writing data of magnetic memory cell of the present invention, according to magnetic tunnel-junction electricity to be written
Resistance state selects the path of applied electric current.After the path of electric current is determined, the final Resistance states of magnetic tunnel-junction are true
Fixed, the positive negative direction of the electric current on every current path can be by optional one.In other words, in practical applications, every electric current road
Current direction on diameter may be configured as immobilizing.In addition, a kind of method for writing data of magnetic memory cell of the present invention, data
Externally-applied magnetic field is not necessarily to during write operation.
Fig. 3 is a kind of data write operation schematic diagram of magnetic memory cell of the present invention, this sentences oval magnetic tunnel-junction
For.It is emphasized that Fig. 3 described embodiment is equally applicable to other magnetic channels with unequal length axis shape
Knot, such as rectangle magnetic tunnel-junction or diamond shape magnetic tunnel-junction.Wherein, Fig. 3 A~Fig. 3 B, Fig. 3 C~Fig. 3 D, Fig. 3 E~Fig. 3 F, Fig. 3 G
~Fig. 3 H respectively corresponds a kind of alternative embodiment, amounts to four kinds of embodiments.Wherein Fig. 3 A, Fig. 3 C, Fig. 3 E and Fig. 3 G are
Stereoscopic schematic diagram, Fig. 3 B, Fig. 3 D, Fig. 3 F and Fig. 3 H are the top view along z-axis.In any one embodiment, data write-in behaviour
Make to be achieved by applying electric current along particular path in strong Quantum geometrical phase layer 1.Below in conjunction with Fig. 4~Fig. 7, illustrate to count
According to the detailed process of write operation.Hereinafter, without loss of generality, to the relationship between current path and data mode to be written
Do following setting:
Setting one: if being greater than I along the current value that the longitudinal axis 12 of strong Quantum geometrical phase layer 1 this paths are appliedC1, and
Current duration is greater than DW1, then magnetic tunnel-junction 6 is set to low resistance state；If along the horizontal axis 13 of strong Quantum geometrical phase layer 1
The current value that this paths is applied is greater than IC2, and current duration is greater than DW2, then magnetic tunnel-junction 6 is set to high-resistance state.
Wherein IC1、IC2、DW1And DW2Meaning Detailed description of the invention as detailed above.
Fig. 4 is signal waveforms corresponding to Fig. 3 A~Fig. 3 B embodiment and magnetic tunnel-junction resistance variations schematic diagram.Scheming
In 4A, magnetic tunnel-junction 6 is carved at the beginning in low resistance state.From initial time to t1, no electric current is applied in device, magnetic tunnel
Road knot 6 is still in low resistance state.From moment t1To t2, electric current 16 is applied, so that spin orbital moment is generated, electric current 16
Value I16Less than required critical write-in current value IC1, small variation occurs for the resistance of magnetic tunnel-junction 6.From moment t2To t3, electricity
Stream 16 is removed, and magnetic tunnel-junction 6 restores to low resistance state.From moment t3To t4, electric current 16 is applied again, generates spin(-)orbit
Square, at this time the value I of electric current 1616Greater than required critical write-in current value IC1, nevertheless, magnetic tunnel-junction 6 will not be still reversed
To high-resistance state (because according to " setting one ", the electric current on the path will promote magnetic tunnel-junction 6 to be flipped to low resistance state),
Therefore the resistance of magnetic tunnel-junction 6 is still in low-resistance value RLSmall variation nearby occurs.In moment t4, electric current 16 removed, magnetic tunnel
Road knot 6 restores to low resistance state.
In figure 4b, magnetic tunnel-junction 6 is carved at the beginning in high-resistance state.From initial time to t1, no electric current applied
It is added on device, magnetic tunnel-junction 6 is still in high-resistance state.From moment t1To t2, electric current 16 is applied, to generate spin rail
Road square, the value I of electric current 1616Less than required critical write-in current value IC1, small variation occurs for the resistance of magnetic tunnel-junction 6.From
Moment t2To t3, electric current 16 removed, and magnetic tunnel-junction 6 restores to high-resistance state.From moment t3To t4, electric current 16 is applied again,
Spin orbital moment is generated, at this time the value I of electric current 1616Greater than required critical write-in current value IC1, magnetic tunnel-junction 6 is from high resistance
Gradually to low resistance state transformation, (because according to " setting one ", the electric current on the path will promote magnetic tunnel-junction 6 to be flipped to state
Low resistance state), since the duration of electric current 16 is greater than required write time delay DW1, therefore the resistance of magnetic tunnel-junction 6 reaches
To low-resistance value RLNear.In moment t4, electric current 16 removed, and magnetic tunnel-junction 6 progressivelyes reach thorough low resistance state.
In summary, when electric current 16 is applied in device, no matter magnetic tunnel-junction 6 is carved in which kind of state, only at the beginning
Want the value I of electric current 1616Greater than required critical write-in current value IC1, and the duration of electric current 16 be greater than required write-in when
Between postpone DW1, then magnetic tunnel-junction 6 finally will all be set to low resistance state.
Fig. 5 is signal waveforms corresponding to Fig. 3 C~Fig. 3 D embodiment and magnetic tunnel-junction resistance variations schematic diagram.Scheming
In 5A, magnetic tunnel-junction 6 is carved at the beginning in low resistance state.From initial time to t1, no electric current is applied in device, magnetic tunnel
Road knot 6 is still in low resistance state.From moment t1To t2, electric current 18 is applied, so that spin orbital moment is generated, electric current 18
Value I18Less than required critical write-in current value IC2, small variation occurs for the resistance of magnetic tunnel-junction 6.From moment t2To t3, electricity
Stream 18 is removed, and magnetic tunnel-junction 6 restores to low resistance state.From moment t3To t4, electric current 18 is applied again, generates spin(-)orbit
Square, at this time the value I of electric current 1818Greater than required critical write-in current value IC2, magnetic tunnel-junction 6 is from low resistance state gradually Xiang Gao electricity
Resistance state transformation (because according to " setting one ", the electric current on the path will promote magnetic tunnel-junction 6 to be flipped to high-resistance state), by
It is greater than required write time delay D in the duration of electric current 18W2, the resistance of magnetic tunnel-junction 6 reaches low-resistance value RHNear.
In moment t4, electric current 18 removed, and magnetic tunnel-junction 6 progressivelyes reach thorough high-resistance state.
In figure 5B, magnetic tunnel-junction 6 is carved at the beginning in high-resistance state.From initial time to t1, no electric current applied
It is added on device, magnetic tunnel-junction 6 is still in high-resistance state.From moment t1To t2, electric current 18 is applied, to generate spin rail
Road square, the value I of electric current 1818Less than required critical write-in current value IC2, small variation occurs for the resistance of magnetic tunnel-junction 6.From
Moment t2To t3, electric current 18 removed, and magnetic tunnel-junction 6 restores to high-resistance state.From moment t3To t4, electric current 18 is applied again,
Spin orbital moment is generated, at this time the value I of electric current 1818Greater than required critical write-in current value IC2, nevertheless, magnetic tunnel-junction 6
Low resistance state will not be still flipped to, and (because according to " setting one ", the electric current on the path will promote magnetic tunnel-junction 6 to be reversed
To high-resistance state), therefore the resistance of magnetic tunnel-junction 6 is still in high resistance RHSmall variation nearby occurs.In moment t4, electric current
18 are removed, and magnetic tunnel-junction 6 restores to high-resistance state.
In summary, when electric current 18 is applied in device, no matter magnetic tunnel-junction 6 is carved in which kind of state, only at the beginning
Want the value I of electric current 1818Greater than required critical write-in current value IC2, and the duration of electric current 18 be greater than required write-in when
Between postpone DW2, then magnetic tunnel-junction 6 finally will all be set to high-resistance state.
Fig. 6 is signal waveforms corresponding to Fig. 3 E~Fig. 3 F embodiment and magnetic tunnel-junction resistance variations schematic diagram.At this
In embodiment, the electric current 20 applied is identical as 16 size of electric current in Fig. 3 A~Fig. 3 B illustrated embodiment, contrary, same
One path.The analysis according to fig. 2, electric current 20 and electric current 16 will realize identical data write operation as a result, therefore
Fig. 6 is identical with the result figure of Fig. 4, and details are not described herein.
Fig. 7 is signal waveforms corresponding to Fig. 3 G~Fig. 3 H embodiment and magnetic tunnel-junction resistance variations schematic diagram.At this
In embodiment, the electric current 21 applied is identical as 18 size of electric current in Fig. 3 C~Fig. 3 D illustrated embodiment, contrary, same
One path.The analysis according to fig. 2, electric current 21 and electric current 18 will realize identical data write operation as a result, therefore
Fig. 7 is identical with the result figure of Fig. 5, and details are not described herein.
Claims (11)
1. a kind of magnetic memory cell, it is characterised in that: the storage unit includes: strong Quantum geometrical phase layer, magnetic tunnel-junction,
One electrode, second electrode, third electrode, the 4th electrode and the 5th electrode；Wherein, magnetic tunnel-junction is made on strong spin(-)orbit coupling
It closes above layer；First electrode, second electrode, third electrode and the 4th electrode are made on four ends of strong Quantum geometrical phase layer
At mouthful；5th electrode is made on above magnetic tunnel-junction；
Wherein, strong Quantum geometrical phase layer often forms an axis with respect to two electrodes at port, therefore shares two axis,
It is referred to as the longitudinal axis and horizontal axis of strong Quantum geometrical phase layer, and the longitudinal axis and horizontal axis are orthogonal；It is made on the surface of magnetic tunnel-junction
At the unequal shape of major and minor axis；The long axis of the surface shape of magnetic tunnel-junction and the longitudinal axis of strong Quantum geometrical phase layer are neither mutual
It is overlapped, it is also not orthogonal, but be angled relative to each other, slanted angle is between 0 degree and 90 degree.
2. a kind of magnetic memory cell according to claim 1, it is characterised in that: the strong Quantum geometrical phase layer is
Heavy metal or antiferromagnet or topological insulator material.
3. a kind of magnetic memory cell according to claim 2, it is characterised in that: the heavy metal includes platinum Pt, tantalum
Ta, tungsten W；The antiferromagnet includes compound iridium manganese IrMn, platinum manganese PtMn；The topological insulator material includes changing
Close object bismuth selenium BiSe, bismuth antimony BiSb；The proportion content of each element can be different in above compound.
4. a kind of magnetic memory cell according to claim 1, it is characterised in that: the top of the strong Quantum geometrical phase layer
Area is greater than the floor space of magnetic tunnel-junction.
5. a kind of magnetic memory cell according to claim 1, it is characterised in that: the magnetic tunnel-junction is at least by four layers
Substance is constituted, including the first feeromagnetic metal, oxide, the second feeromagnetic metal and synthetic anti-ferromagnetic layer.
6. a kind of magnetic memory cell according to claim 1, it is characterised in that: there are two types of the magnetic tunnel-junction at least has
Resistance states, resistance value depend on the first feeromagnetic metal and the second metallic ferromagnetic direction of magnetization.
7. a kind of magnetic memory cell according to claim 6, it is characterised in that: the second metallic ferromagnetic magnetization side
To immobilizing, the first metallic ferromagnetic direction of magnetization can be changed by write operation.
8. a kind of magnetic memory cell according to claim 1, it is characterised in that: the magnetic tunnel-junction has perpendicular magnetic each
Anisotropy, that is, at steady state, the first feeromagnetic metal and the second metallic ferromagnetic direction of magnetization are vertically.
9. a kind of method for writing data of magnetic memory cell, it is characterised in that: by applying electricity in strong Quantum geometrical phase layer
Miscarriage is born from rotation orbital moment and is realized, the path of the electric current can be shared along the longitudinal axis or horizontal axis of strong Quantum geometrical phase layer
Two kinds of selections；The final Resistance states of magnetic tunnel-junction are solely dependent upon the path of electric current, unrelated with the positive negative direction of electric current, that is, to hold
When row data write operation, if applying electric current along the longitudinal axis of strong Quantum geometrical phase layer to which magnetic tunnel-junction is written as low electricity
Resistance state then applies electric current along the horizontal axis of strong Quantum geometrical phase layer and magnetic tunnel-junction is written as high-resistance state, or vice versa.
10. a kind of method for writing data of magnetic memory cell according to claim 9, it is characterised in that: data write-in
Required sense of current can be set to immobilize.
11. a kind of method for writing data of magnetic memory cell according to claim 9, it is characterised in that: described one
The method for writing data of magnetic memory cell is planted, is not necessarily to externally-applied magnetic field in data writing operation.
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