CN110061127A - The forming method and magnetic random access memory of magnetic tunnel-junction - Google Patents
The forming method and magnetic random access memory of magnetic tunnel-junction Download PDFInfo
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- CN110061127A CN110061127A CN201910419482.7A CN201910419482A CN110061127A CN 110061127 A CN110061127 A CN 110061127A CN 201910419482 A CN201910419482 A CN 201910419482A CN 110061127 A CN110061127 A CN 110061127A
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 138
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- 230000008021 deposition Effects 0.000 claims description 7
- 229910005335 FePt Inorganic materials 0.000 claims description 6
- 229910019041 PtMn Inorganic materials 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 4
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- 230000009471 action Effects 0.000 abstract description 8
- 230000004888 barrier function Effects 0.000 abstract description 5
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- 229910001385 heavy metal Inorganic materials 0.000 description 2
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- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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Abstract
The application discloses a kind of forming method of magnetic tunnel-junction, including provides substrate, and the substrate is formed with hearth electrode；Magnetic tunnel-junction is formed on the hearth electrode, the magnetic tunnel-junction includes the vertical pinning layer stacked gradually from the bottom to top, the first magnetosphere, tunnel layer, the second magnetosphere and inverse ferric magnetosphere, first magnetosphere and second magnetosphere have perpendicular magnetic anisotropy, the inverse ferric magnetosphere is being formed with interface bias-field with the described second magnetospheric intersection, at interface, bias-field and logic gates under the action ofs, complete Magnetic moment reversal, realize data write-in.The write operation relies on pulse voltage, it is minimum by the electric current of tunnel knot, therefore power consumption is extremely low, damage will not be generated to the barrier layer of tunnel knot, also, the burst length is related with the pulse voltage intensity applied, and magnetic moment orientation overturning can be realized without accurately controlling the burst length, the pressure for reducing clock circuit, increases reliability.Disclosed herein as well is a kind of magnetic random access memories.
Description
Technical field
This application involves semiconductor field, in particular to the forming method and reluctance type random storage of a kind of magnetic tunnel-junction
Device.
Background technique
With the development of spintronics, one kind is based on magnetic tunnel-junction (Magnetic Tunnel Junction, MTJ)
Magnetic random access memory (MRAM, Magnetoresistive Random Access Memory) is widely applied,
The equipment for can be independent or integrating and using random access memory, in processor, specific integrated circuit or system on chip.
Currently, write-in power consumption is one of MRAM urgent problem greatly.The nuclear structure of MRAM is MTJ, therefore is optimized
The structure and writing mode of MTJ is that the big Core Solution of power consumption is written in it.Industry mainly turns in research and development spin(-)orbit at present
Square (Spin-Orbit Torque, SOT) and voltage control magnetic anisotropy (Voltage Control Magnetic
Anisotropy, VCMA) two kinds of overturning magnetic moment modes more efficiently, to solve the problems, such as that write-in power consumption is big.
However, SOT-MTJ belongs to three terminal device, it is unfavorable for High Density Integration, in addition, for the tunnel of perpendicular magnetic anisotropy
Knot needs just to be able to achieve orientation overturning using externally-applied magnetic field, and relatively for fear of the spin Hall angle of current heavy metal material
Small, reset current density is still larger；Traditional VCMA-MTJ realizes magnetic moment orientation overturning by VCMA effect, needs accurately
The alive time is applied in control, this is high to the clock control requirement of circuit, leads to the write error rate of traditional VCMA-MTJ
Higher, reliability is lower.
Summary of the invention
In view of this, passing through the second magnetic in magnetic channel section this application provides a kind of forming method of magnetic tunnel-junction
Property layer on form inverse ferric magnetosphere, based on " Ferromagnetic/Antiferromagnetic " interface generate interface bias-field to replace externally-applied magnetic field, in the biasing
Magnetic moment reversal is completed under the action of field and logic gates, realizes data write-in.Write operation relies on pulse voltage, passes through tunnel
The electric current of road knot is minimum, therefore power consumption is extremely low, and damage, also, burst length and institute will not be generated to the barrier layer of tunnel knot
The pulse voltage intensity of application is related, and magnetic moment orientation overturning can be realized without accurately controlling the burst length, reduce clock electricity
The pressure on road, increases reliability.Accordingly, present invention also provides a kind of magnetic random access memories.
On the one hand the application provides a kind of forming method of magnetic tunnel-junction, comprising:
Substrate is provided, the substrate is formed with hearth electrode；
Magnetic tunnel-junction is formed on the hearth electrode, the magnetic tunnel-junction includes the vertical pinning stacked gradually from the bottom to top
Layer, the first magnetosphere, tunnel layer, the second magnetosphere and inverse ferric magnetosphere, first magnetosphere and second magnetosphere have
Perpendicular magnetic anisotropy, the inverse ferric magnetosphere are being formed with interface bias-field with the second magnetosphere intersection.
Optionally, the magnetic channel junction configuration is ellipse, and the direction of the interface bias-field is along the ellipse
The direction of short axle.
Optionally, the magnetic tunnel-junction that formed on the hearth electrode includes:
Successively carry out the growth of each material layer of magnetic tunnel-junction；
The patterning of each material layer of the magnetic tunnel-junction is carried out, to form the magnetic tunnel-junction.
Optionally, the inverse ferric magnetosphere includes any one in IrMn, PtMn and FePt.
Optionally, first magnetosphere, the tunnel layer, second magnetosphere and the inverse ferric magnetosphere pass through following
Mode is formed:
Magnetron sputtering, molecular beam epitaxy or pulse laser deposition.
Optionally, the magnetic tunnel-junction further include:
Test electrode layer on the inverse ferric magnetosphere.
Optionally, the magnetic tunnel-junction further include: positioned at the test electrode layer high-K dielectric layer at least and top electrode.
On the one hand the application provides a kind of magnetic random access memory, comprising:
Substrate；
Positioned at the hearth electrode of the substrate；
Magnetic tunnel-junction on the hearth electrode, the magnetic tunnel-junction include the vertical nail stacked gradually from the bottom to top
Prick layer, the first magnetosphere, tunnel layer, the second magnetosphere and inverse ferric magnetosphere, first magnetosphere and second magnetosphere tool
There is perpendicular magnetic anisotropy, the inverse ferric magnetosphere has interface bias-field with the second magnetosphere intersection.
Optionally, the magnetic channel junction configuration is ellipse, and the direction of the interface bias-field is along the ellipse
The direction of short axle.
Optionally, the inverse ferric magnetosphere includes any one in IrMn, PtMn and FePt.
Optionally, the magnetic tunnel-junction further include: the test electrode layer on the inverse ferric magnetosphere.
Optionally, the magnetic tunnel-junction further include: positioned at the test electrode layer high-K dielectric layer at least and top electrode.
As can be seen from the above technical solutions, the embodiment of the present application has the advantage that
The embodiment of the present application provides a kind of forming method of magnetic tunnel-junction, and this method includes providing substrate, the substrate
Be formed with hearth electrode, form magnetic tunnel-junction on the hearth electrode, the magnetic tunnel-junction include stack gradually from the bottom to top it is vertical
Pinning layer, the first magnetosphere, tunnel layer, the second magnetosphere and inverse ferric magnetosphere, first magnetosphere and second magnetosphere
With perpendicular magnetic anisotropy, the inverse ferric magnetosphere is being formed with interface bias-field with the second magnetosphere intersection, at interface
Magnetic moment reversal is completed under the action of bias-field and logic gates, realizes data write-in.The write operation relies on pulse voltage,
It is minimum by the electric current of tunnel knot, therefore power consumption is extremely low, will not generate damage to the barrier layer of tunnel knot, also, when pulse
Between it is related with the pulse voltage intensity applied, without accurately control the burst length can be realized magnetic moment orientation overturning, reduce
The pressure of clock circuit, increases reliability.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is the present invention
Some embodiments for those of ordinary skill in the art without creative efforts, can also basis
These attached drawings obtain other attached drawings.
Fig. 1 shows the flow chart of the forming method of magnetic tunnel-junction provided by the embodiments of the present application；
A series of processing procedures that Fig. 2A to Fig. 2 B shows the forming method of magnetic tunnel-junction provided by the embodiments of the present application are corresponding
Structural schematic diagram；
Fig. 3 shows the schematic shapes of magnetic tunnel-junction in the embodiment of the present application；
Fig. 4 shows Magnetic moment reversal schematic diagram in the embodiment of the present application；
Fig. 5 A to Figure 10 B shows the corresponding cross-sectional view of each step for forming magnetic tunnel-junction in the embodiment of the present application and bows
View；
Figure 11 shows the structural schematic diagram of magnetic random access memory in the embodiment of the present application.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with
Implemented using other than the one described here other way, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by the specific embodiments disclosed below.
Secondly, combination schematic diagram of the present invention is described in detail, when describing the embodiments of the present invention, for purposes of illustration only, table
Show that the sectional view of device architecture can disobey general proportion and make partial enlargement, and the schematic diagram is example, is not answered herein
Limit the scope of protection of the invention.In addition, the three-dimensional space of length, width and depth should be included in actual fabrication.This
Outside, the present invention can repeat reference numerals and/or letter, this repetition be in different embodiments for simplified and clear mesh
, the relationship between discussed various embodiments and/or setting itself is not indicated.
Need just to be able to achieve orientation overturning, and the spin Hall angle of heavy metal material using externally-applied magnetic field for SOT-MTJ
Relatively small, reset current density is still larger, causes write-in power consumption big and VCMA-MTJ needs accurately control application electricity
It is the time of pressure, more demanding to circuit clock control, cause VCMA-MTJ write error rate high, the low problem of reliability, this Shen
A kind of forming method of magnetic tunnel-junction please be provide, by forming inverse ferric magnetosphere, base on the second magnetosphere of magnetic tunnel-junction
Generate interface bias-field in the second magnetosphere and inverse ferric magnetosphere interfacial characteristics, to replace externally-applied magnetic field, in the interface bias-field and
Magnetic moment reversal is completed under the action of logic gates, realizes data write-in.
The write operation relies on pulse voltage, and the electric current of tunnel knot is minimum, and therefore, write-in power consumption is extremely low, will not be to tunnel
The barrier layer of road knot, that is, tunnel layer generates damage, and the burst length is related with the pulse voltage intensity applied, without accurate
The burst length is controlled, the pressure of clock circuit is reduced, increases reliability.
In order to enable the technical solution of the application it is clearer, it can be readily appreciated that below in conjunction with specific embodiment to this Shen
The forming method of magnetic tunnel-junction please is introduced.
Fig. 1 is the flow chart of the forming method of magnetic tunnel-junction provided by the embodiments of the present application, and Fig. 2A to Fig. 2 B is the application
A series of corresponding structural schematic diagram of processing procedures of forming method for the magnetic tunnel-junction that embodiment provides, A to Fig. 2 B referring to Fig. 1 and Fig. 2,
This method comprises:
S101: providing substrate 10, and the substrate 10 is formed with hearth electrode 20.
S102: forming magnetic tunnel-junction 30 on the hearth electrode 20, and the magnetic tunnel-junction 30 includes successively layer from the bottom to top
Folded vertical pinning layer 31, the first magnetosphere 32, tunnel layer 33, the second magnetosphere 34 and inverse ferric magnetosphere 35, described first is magnetic
Layer 32 and second magnetosphere 34 have perpendicular magnetic anisotropy, and the inverse ferric magnetosphere 35 is that second magnetosphere 34 has a common boundary
Place is formed with interface bias-field.
In the embodiment of the present application, the first magnetosphere 32 and the second magnetosphere 34 are by the ferromagnetic material with perpendicular magnetic anisotropy
Material is formed, and ferromagnetic material can be fe magnetic material, alloy ferromagnetic material or the magnetic metallic compound of tool etc., such as can
Think the soft magnetic materials such as Co, Fe, Ni, CoFeB or Heusler alloy.According to specific needs, the first magnetosphere 32 and the second magnetic
Property layer 34 can be identical or different material.First magnetosphere 32 is arranged with vertical pinning layer 31, the vertical pinning layer
Material for example can be (Co/Pt)nMultilayer film is manually antiferromagnetic etc., to fix the first magnetosphere 32 i.e. magnetic moment of reference layer.
Inverse ferric magnetosphere 35 can specifically be formed by antiferromagnet.Idol arrangement is presented by exchange interaction in atomic spin
Magnetic material in, there is antiferromagnetic exchange interaction between adjacent atom, spin as arranged anti-parallel, though then magnetic moment is in
Order state, but when total Net magnetic moment is not by outer field action is still zero, and this ordered magnetic state is anti-ferromagnetism.As this Shen
An example please, inverse ferric magnetosphere 35 can be formed by IrMn, PtMn or FePt, and certain inverse ferric magnetosphere 35 can also be by α-
The pure metal material such as Mn, Cr is formed.
In specific implementation, the second magnetosphere 34 forms a kind of " Ferromagnetic/Antiferromagnetic " interface with 35 intersection of inverse ferric magnetosphere,
Interface bias-field is generated based on " Ferromagnetic/Antiferromagnetic " interface, externally-applied magnetic field can be replaced.Magnetic tunnel-junction is inclined at above-mentioned interface
It sets and completes Magnetic moment reversal under the action of field and logic gates, realize data write-in.
Further, when forming magnetic tunnel-junction 30, its ellipse can be made by patterned mode.The magnetic channel
Inverse ferric magnetosphere 35 in knot 30 is in the direction of the interface bias-field formed with 34 intersection of the second magnetosphere for along described ellipse
The direction of round short axle.As shown in figure 3, it illustrates magnetic channel junction configurations, in this example, magnetic tunnel-junction is ellipse
Shape, intra-face anisotropy axis is along transverse, such as the x-axis in Fig. 3, when being applied more than positive critical voltage V to tunnel knotc's
Voltage, when time long enough, the magnetic moment direction of the second magnetosphere 34 will be overturn by the direction of vertical plane to long axis direction.Its
In, positive critical voltage refers to voltage when perpendicular magnetic anisotropy disappears.
Such as IrMn layers of inverse ferric magnetosphere 35 in the interface biasing field direction formed with 34 intersection of the second magnetosphere along ellipse
Round short-axis direction, such as the y-axis in Fig. 3.After applied voltage removes, the easy magnetizing axis of the second magnetosphere 34 reverts to Vertical Square
To, due to the presence of interface bias-field, destroy Time-reversal symmetry, therefore the magnetic moment property of can determine whether of the second magnetosphere 34
On overturning to the direction identical or opposite with easy magnetizing axis.
It is illustrated below with reference to a specific example.
Magnetic moment reversal schematic diagram shown in Figure 4, it is assumed that second magnetosphere 34 is such as when initial, in magnetic tunnel-junction 30
The magnetic moment direction of CoFeB (abbreviation CFB) applies voltage V along z-axis forward direction, in t moment, wherein V >=Vc, make CFB it is vertical respectively to
The opposite sex disappears, at this point, CFB by it is demagnetized can and IrMn bias-field (assuming that along positive y-direction, when can be by IrMn layers of growth
Apply positive y-direction external magnetic field anneal realize) collective effect, due to it is demagnetized can Equivalent Magnetic Field be greater than bias-field,
The equilbrium position of CFB magnetic moment will be along x-axis, and the IrMn bias-field of positive y-direction has broken the Time-reversal symmetry of x-axis, so
After a period of time, for the magnetic moment direction of CFB by orientation overturning to the direction-x, length of time is related with applied voltage swing,
The voltage smaller time is shorter.At this point, applied voltage is removed, the perpendicular magnetic anisotropy of CFB restores, equally, in the inclined of positive y-direction
Under the action of setting field and the direction z perpendicular anisotropy field, magnetic moment overturns orientation to the direction-z.Therefore, it is operated, is made by this
The magnetic moment of CFB is overturn by the direction+z to the direction-z.Vice versa.
In some possible implementations, magnetic tunnel-junction 30 can also include the survey on the inverse ferric magnetosphere 35
Electrode layer is tried, which is used to test the magneto-resistor of magnetic tunnel-junction.In practical application, test electrode layer can use
Metal material is formed, and as an example, can use Ru.
Further, high-K dielectric layer and top electrode can also be set on test electrode layer, wherein high-K dielectric layer is used for
Inverse ferric magnetosphere 35 is protected, top electrode and hearth electrode are used for collective effect, to provide voltage for the magnetic tunnel-junction.
From the foregoing, it will be observed that the embodiment of the present application provides a kind of forming method of magnetic tunnel-junction, this method includes providing substrate,
The substrate is formed with hearth electrode, forms magnetic tunnel-junction on the hearth electrode, which includes successively layer from the bottom to top
Folded vertical pinning layer, the first magnetosphere, tunnel layer, the second magnetosphere and inverse ferric magnetosphere, first magnetosphere and described
Two magnetospheres have perpendicular magnetic anisotropy, and the inverse ferric magnetosphere is being formed with interface biasing with the second magnetosphere intersection
, at interface, bias-field and logic gates under the action ofs, complete Magnetic moment reversal, realize data write-in.The write operation relies on
Pulse voltage, it is minimum by the electric current of tunnel knot, therefore power consumption is extremely low, and damage will not be generated to the barrier layer of tunnel knot, and
And the burst length is related with the pulse voltage intensity applied, without accurately control the burst length can be realized magnetic moment orientation turn over
Turn, reduces the pressure of clock circuit, increase reliability.
For above-mentioned S102, present invention also provides a kind of specific implementations.Specifically, magnetic tunnel-junction is successively carried out
The growth of each material layer；The patterning of each material layer of the magnetic tunnel-junction is carried out, to form the magnetic tunnel-junction.
In order to make it easy to understand, the specific implementation process of S102 is described in detail with reference to the accompanying drawing.Wherein, S102 has
Body can be achieved by the steps of:
Step 1: depositions of bottom electrode, magnetic tunnel-junction MTJ and inverse ferric magnetosphere.
In this example, hearth electrode can be Au, and MTJ may include CFB/MgO/CFB three-decker, and inverse ferric magnetosphere can be with
It is any one in IrMn, PtMn or FePt, Fig. 5 A and Fig. 5 B respectively illustrate the diagrammatic cross-section and top view of the step.
Step 2: hearth electrode and the interface of photoetching magnetic tunnel-junction.
In specific implementation, magnetic tunnel-junction can be patterned by photolithographicallpatterned, Fig. 6 A and Fig. 6 B are shown respectively
The diagrammatic cross-section and top view of the step.
Step 3: filling dielectric and carrying out test electrode deposition and patterning.
Specifically, after photoetching hearth electrode and interface, SiO can be filled2Carry out insulation blocking, wherein the dielectric
SiO2It is concordant with IrMn；Then, then test electrode deposition is carried out, and is patterned by photolithographicallpatterned, wherein test electrode
It can be formed using Ru, Ru layers at least cover IrMn.Fig. 7 A and Fig. 7 B respectively illustrate the diagrammatic cross-section and vertical view of the step
Figure.
Step 4: high-K dielectric layer is deposited and patterned.
After forming test electrode, it is also necessary to form high-K dielectric layer, which specifically can be MgO, Al2O3Or
Person HfO2Etc..In this example, high-K dielectric layer is formed using MgO, the section that Fig. 8 A and Fig. 8 B respectively illustrate the step shows
Intention and top view.
Step 5: filling dielectric, and aperture.
Similar with dielectric is filled in third step, filling SiO2 is concordant with MgO.Then, lead to overetched mode pair
SiO2 carries out aperture, as shown in fig. 9 a and fig. 9b.
Step 6: top electrode deposition and graphical.
In the present embodiment, top electrode can be formed using Au, specifically, first fill Au, then carry out photoetching, shape to Au
At pattern as shown in figs. 10 a and 10b, as shown in Figure 10 B, the on-load voltage between Vcc and GND provides VCMA pulse electricity
Pressure, provides test voltage, for measuring the magneto-resistor of MTJ between Vread and GND.
Wherein, the first magnetosphere of magnetic tunnel-junction, the tunnel layer, second magnetosphere and described antiferromagnetic are being formed
When the film layers such as layer, it can be formed by any one mode in magnetron sputtering, molecular beam epitaxy or pulse laser deposition.
The forming method of magnetic tunnel-junction provided by the embodiments of the present application is described in detail above, in addition, this Shen
The magnetic random access memory formed by above-mentioned forming method please be additionally provide, with reference to shown in Figure 11, the reluctance type random storage
Device includes:
Substrate 1101；
Positioned at the hearth electrode 1102 of the substrate；
Magnetic tunnel-junction 1103 on the hearth electrode 1102, the magnetic tunnel-junction 1103 include from the bottom to top successively
Vertical pinning layer 1104, the first magnetosphere 1105, tunnel layer 1106, the second magnetosphere 1107 and the inverse ferric magnetosphere 1108 of stacking,
First magnetosphere 1105 and second magnetosphere 1107 have perpendicular magnetic anisotropy, and the inverse ferric magnetosphere 1108 is institute
1107 intersection of the second magnetosphere is stated with interface bias-field.
Optionally, the shape of the magnetic tunnel-junction 1103 is ellipse, and the direction of the interface bias-field is along described ellipse
The direction of round short axle.
Optionally, the inverse ferric magnetosphere 1108 includes IrMn, PtMn or FePt.
Optionally, the magnetic tunnel-junction 1103 further include: the test electrode layer 1109 on the inverse ferric magnetosphere 1108.
It specifically, further include high-K dielectric layer 1110, the shape in the high-K dielectric layer on the test electrode layer 1109
At there is top electrode 1111, VCMA voltage is loaded between hearth electrode 1102 and top electrode 1111, for realizing Magnetic moment reversal, bottom electricity
It is loaded with magnetic tunnel-junction performance test voltage between pole 1102 and test electrode layer 1109, for measuring the magnetoelectricity of magnetic tunnel-junction
Resistance.
In specific application, above-mentioned MRAM can arrange in the form of an array, form the storage array of MRAM, the storage
Array independence or can be integrated in the equipment using MRAM storage array, equipment such as processor, specific integrated circuit or piece
Upper system etc..
All the embodiments in this specification are described in a progressive manner, same and similar portion between each embodiment
Dividing may refer to each other, and each embodiment focuses on the differences from other embodiments.Especially for device junction
For the embodiment of structure, since it is substantially similar to the method embodiment, so describing fairly simple, related place is referring to method
The part of embodiment illustrates.
The above is only a preferred embodiment of the present invention, although the present invention has been disclosed in the preferred embodiments as above, so
And it is not intended to limit the invention.Anyone skilled in the art is not departing from technical solution of the present invention ambit
Under, many possible changes and modifications all are made to technical solution of the present invention using the methods and technical content of the disclosure above,
Or equivalent example modified to equivalent change.Therefore, anything that does not depart from the technical scheme of the invention, according to the present invention
Technical spirit any simple modification, equivalent variation and modification made to the above embodiment, still fall within the technology of the present invention side
In the range of case protection.
Claims (10)
1. a kind of forming method of magnetic tunnel-junction characterized by comprising
Substrate is provided, the substrate is formed with hearth electrode；
Form magnetic tunnel-junction on the hearth electrode, the magnetic tunnel-junction include the vertical pinning layer stacked gradually from the bottom to top,
First magnetosphere, tunnel layer, the second magnetosphere and inverse ferric magnetosphere, first magnetosphere and second magnetosphere have vertical
Anisotropy, the inverse ferric magnetosphere are being formed with interface bias-field with the second magnetosphere intersection.
2. the method according to claim 1, wherein the magnetic channel junction configuration is ellipse, the interface
The direction of bias-field is along the direction of the oval short axle.
3. the method according to claim 1, wherein the magnetic tunnel-junction that formed on the hearth electrode includes:
Successively carry out the growth of each material layer of magnetic tunnel-junction；
The patterning of each material layer of the magnetic tunnel-junction is carried out, to form the magnetic tunnel-junction.
4. method according to any one of claims 1 to 3, which is characterized in that the inverse ferric magnetosphere include IrMn, PtMn and
Any one in FePt.
5. method according to any one of claims 1 to 3, which is characterized in that first magnetosphere, the tunnel layer,
Second magnetosphere and the inverse ferric magnetosphere are formed in the following manner:
Magnetron sputtering, molecular beam epitaxy or pulse laser deposition.
6. method according to any one of claims 1 to 3, which is characterized in that the magnetic tunnel-junction further include:
Test electrode layer on the inverse ferric magnetosphere.
7. according to the method described in claim 6, it is characterized in that, the magnetic tunnel-junction further include: be located at the test electrode
High-K dielectric layer and top electrode on layer.
8. a kind of magnetic random access memory characterized by comprising
Substrate；
Positioned at the hearth electrode of the substrate；
Magnetic tunnel-junction on the hearth electrode, the magnetic tunnel-junction include the vertical pinning stacked gradually from the bottom to top
Layer, the first magnetosphere, tunnel layer, the second magnetosphere and inverse ferric magnetosphere, first magnetosphere and second magnetosphere have
Perpendicular magnetic anisotropy, the inverse ferric magnetosphere have interface bias-field with the second magnetosphere intersection.
9. memory according to claim 8, which is characterized in that the magnetic channel junction configuration is ellipse, the boundary
The direction of face bias-field is along the direction of the oval short axle.
10. memory according to claim 8, which is characterized in that the magnetic tunnel-junction further include: on the inverse ferric magnetosphere
Test electrode layer.
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