CN110797371B - Magnetic memory, data storage device and control method - Google Patents
Magnetic memory, data storage device and control method Download PDFInfo
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- CN110797371B CN110797371B CN201910940252.5A CN201910940252A CN110797371B CN 110797371 B CN110797371 B CN 110797371B CN 201910940252 A CN201910940252 A CN 201910940252A CN 110797371 B CN110797371 B CN 110797371B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
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- H—ELECTRICITY
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Abstract
The invention provides a magnetic memory, a data storage device and a control method, wherein the magnetic memory comprises a strong spin orbit coupling layer and a plurality of magnetic tunnel junctions which are arranged on the strong spin orbit coupling layer and electrically contacted with the strong spin orbit coupling layer, wherein a first input electrode and a first output electrode which are connected with the strong spin orbit coupling layer are arranged on the two sides of the strong spin orbit coupling layer corresponding to each magnetic tunnel junction; the magnetic tunnel junction has perpendicular magnetic anisotropy, the length-width ratio of the magnetic tunnel junction is not 1, and a preset included angle is formed between the symmetric axis of the magnetic tunnel junction and the symmetric axis of the corresponding strong spin orbit coupling layer.
Description
Technical Field
The present invention relates to the field of magnetic memory technologies, and in particular, to a magnetic memory, a data storage device, and a control method.
Background
Magnetic Random Access Memory (MRAM) uses a Magnetic Tunnel Junction (MTJ) as a core device, and has the advantages of low power consumption, nonvolatile storage, high writing speed, and the like.
Currently, Spin Orbit Torque (SOT) is one of the most promising MRAM writing technologies. The SOT-MTJ is not easy to break down, has high reliability, and has separated read-write paths and can be optimized independently. In particular, for the currently commonly used magnetic tunnel junction with Perpendicular Magnetic Anisotropy (PMA), the writing speed of the SOT-MRAM is expected to reach the sub-nanosecond level. However, to achieve deterministic switching of the PMA-MTJ state using SOT, it is generally necessary to apply an additional magnetic field to artificially break the system symmetry. However, the use of magnetic fields would complicate the design of MRAM circuits, causing additional area and power consumption overhead.
Disclosure of Invention
An object of the present invention is to provide a magnetic memory which does not require an external magnetic field, simplifies a control circuit of the memory, and improves the storage density. It is another object of the present invention to provide a data storage device. It is a further object of the present invention to provide a method of controlling a magnetic memory. It is a further object of this invention to provide a computer apparatus. It is another object of the invention to provide a readable medium.
In order to achieve the above object, in one aspect, the present invention discloses a magnetic memory, including a strong spin orbit coupling layer and a plurality of magnetic tunnel junctions disposed on the strong spin orbit coupling layer and electrically contacting the strong spin orbit coupling layer, wherein a first input electrode and a first output electrode connected to the strong spin orbit coupling layer are disposed on two sides of each magnetic tunnel junction of the strong spin orbit coupling layer;
the magnetic tunnel junction has perpendicular magnetic anisotropy, the length-width ratio of the magnetic tunnel junction is not 1, and a preset included angle is formed between the symmetry axis of the magnetic tunnel junction and the symmetry axis of the corresponding strong spin orbit coupling layer;
when a first signal is input to the strong spin orbit coupling layer, the plurality of magnetic tunnel junctions are in a first resistance state, and when a second signal is input along the direction of the first input electrode and the first output electrode, the magnetic tunnel junctions corresponding to the first input electrode and the first output electrode are in a second resistance state.
Preferably, the magnetic tunnel junction includes a free layer in electrical contact with the strong spin orbit coupling layer, and a barrier layer and a fixed layer sequentially disposed over the free layer.
Preferably, the material of the free layer and the fixed layer is a ferromagnetic metal, and the barrier layer is an oxide.
Preferably, the magnetic tunnel junction is elliptical or rectangular.
Preferably, the strong spin orbit coupling layer is a heavy metal film or an antiferromagnetic film.
Preferably, the material of the heavy metal thin film is one of platinum Pt, tantalum Ta, or tungsten W.
And a second input electrode and a second output electrode for inputting a first signal are arranged on two sides of the strong spin orbit coupling layer in the extension direction.
The invention also discloses a data storage device, which comprises the magnetic memory, a writing module and a reading module;
the write module is respectively connected with the strong spin orbit coupling layer, the first input electrode and the first output electrode, and is used for inputting a first signal to the strong spin orbit coupling layer to enable all the magnetic tunnel junctions to be in a first resistance state during resetting and inputting a second signal to the first input electrode of the magnetic tunnel junction to be written during data writing to enable the magnetic tunnel junction to be written to be in a second resistance state;
the reading module is used for acquiring signals input to all the magnetic tunnel junctions by the writing module during data writing, and obtaining state signals corresponding to the resistance states of all the magnetic tunnel junctions.
The invention also discloses a control method of the magnetic memory, which comprises the following steps:
inputting a first signal to the strong spin orbit coupling layer at a time t1 to enable all the magnetic tunnel junctions to be in a first resistance state;
at time t2, a second signal is input to the first input electrode of the magnetic tunnel junction to be written to cause the magnetic tunnel junction to be written to assume a second resistance state.
Preferably, the method further comprises the following steps:
and acquiring signals input to all the magnetic tunnel junctions by the write-in module during data writing, and acquiring state signals corresponding to the resistance states of all the magnetic tunnel junctions.
The invention also discloses a computer device comprising a memory, a processor and a computer program stored on the memory and executable on the processor,
the processor, when executing the program, implements the method as described above.
The invention also discloses a computer-readable medium, having stored thereon a computer program,
which when executed by a processor implements the method as described above.
The invention sets a plurality of magnetic tunnel junctions electrically contacted with the strong spin orbit coupling layer on the strong spin orbit coupling layer, wherein each magnetic tunnel junction can be regarded as a memory unit, namely, the invention integrates a plurality of memory units on the strong spin orbit coupling layer, thereby reducing the port number required by each memory unit control, namely reducing the number of corresponding access control transistors, reducing the space of a memory and improving the memory density. When a first signal is input into the strong spin orbit coupling layer, the plurality of magnetic tunnel junctions are in a first resistance state, namely, data stored in the plurality of magnetic tunnel junctions are removed, so that the plurality of magnetic tunnel junctions are all restored to an initial state, when data are written, a second signal is input into the magnetic tunnel junctions to be written, so that the resistance state of the magnetic tunnel junctions to be written is in a second resistance state, and the second resistance state is different from the first resistance state, so that the purpose of storing different data is achieved by changing the resistance states of the plurality of magnetic tunnel junctions. When the magnetic memory of the invention writes data, the writing state only depends on the second signal of the first input electrode, so that the magnetic tunnel junction can be set as a unidirectional current to input the second signal, the circuit design is simplified, the source electrode degradation effect of a control transistor for controlling the input current is relieved, and the power consumption is reduced. In addition, the magnetic memory of the invention does not need to pass through the magnetic tunnel junction when the first signal and the second signal are input, thereby reducing the risk of barrier breakdown of the magnetic tunnel junction and improving the reliability of the device.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic diagram of a magnetic memory according to an embodiment of the present invention;
FIG. 2 is a schematic diagram illustrating the structure of an embodiment of a magnetic memory in accordance with the present invention;
FIG. 3 illustrates a timing diagram for operation of the magnetic memory of FIG. 2;
FIG. 4 is a schematic diagram showing a configuration of a specific example of a data storage device according to the present invention;
FIG. 5 is a flowchart showing one example of a control method of a magnetic memory according to the present invention;
FIG. 6 is a second flowchart illustrating a method for controlling a magnetic memory according to an embodiment of the present invention;
FIG. 7 illustrates a schematic diagram of a computer device suitable for use in implementing embodiments of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
According to one aspect of the present invention, the present embodiment discloses a magnetic memory. As shown in fig. 1, in this embodiment, the magnetic memory includes a strong spin orbit coupling layer 4 and a plurality of magnetic tunnel junctions disposed on the strong spin orbit coupling layer 4 and electrically contacting the strong spin orbit coupling layer 4, wherein a first input electrode 5 and a first output electrode 6 connected to the strong spin orbit coupling layer 4 are disposed on the strong spin orbit coupling layer 4 corresponding to two sides of each magnetic tunnel junction.
The magnetic tunnel junction has perpendicular magnetic anisotropy, and a ratio of a length to a width of the magnetic tunnel junction is not 1. And a preset included angle is formed between the symmetric axis of the magnetic tunnel junction and the corresponding symmetric axis of the strong spin orbit coupling layer. Optionally, the magnetic tunnel junction can be shapes such as ellipse or rectangle, spin orbit coupling layer can be rectangle or square by force, the symmetry axis of magnetic tunnel junction with correspond spin orbit coupling layer 4's symmetry axis form and predetermine the contained angle by force, the symmetry axis of magnetic tunnel junction and the close symmetry axis of spin orbit coupling layer 4 orientation by force promptly do not lie in same straight line, predetermine the size of contained angle and be greater than 0 and be less than 90, can confirm according to actual need. The magnetic tunnel junction has perpendicular magnetic anisotropy, a preset included angle is formed between the magnetic tunnel junction and a symmetric axis corresponding to the strong spin orbit coupling layer, and currents are respectively input along the direction of the symmetric axis of the strong spin orbit coupling layer and the direction perpendicular to the symmetric axis, so that the magnetic tunnel junction can present two different resistance states.
When a first signal is input to the strong spin-orbit coupling layer 4, the plurality of magnetic tunnel junctions are in a first resistance state, and when a second signal is input along the direction of the first input electrode 5 and the first output electrode 6, the magnetic tunnel junctions corresponding to the first input electrode 5 and the first output electrode 6 are in a second resistance state.
The invention sets a plurality of magnetic tunnel junctions electrically contacted with the strong spin orbit coupling layer 4 on the strong spin orbit coupling layer 4, wherein each magnetic tunnel junction can be regarded as a memory unit, namely, the invention integrates a plurality of memory units on the strong spin orbit coupling layer 4, thereby reducing the number of ports required by each memory unit, namely reducing the number of corresponding access control transistors, reducing the space of a memory and improving the memory density. When a first signal is input into the strong spin orbit coupling layer 4, the plurality of magnetic tunnel junctions are in a first resistance state, namely, data stored in the plurality of magnetic tunnel junctions are removed, so that the plurality of magnetic tunnel junctions are all restored to an initial state, when data are written, a second signal is input into the magnetic tunnel junctions to be written, the resistance state of the magnetic tunnel junctions to be written is in a second resistance state, the second resistance state is different from the first resistance state, and therefore the purpose of storing different data is achieved by changing the resistance states of the plurality of magnetic tunnel junctions. When the magnetic memory is used for writing data, the writing state only depends on the second signal of the first input electrode, the second input electrode can be simply arranged by grounding and the like, so that the magnetic tunnel junction can be arranged to input the second signal by unidirectional current, the circuit design is simplified, the source electrode degradation effect of a control transistor for controlling the input current is relieved, and the power consumption is reduced. In addition, the magnetic memory of the invention does not need to pass through the magnetic tunnel junction when the first signal and the second signal are input, thereby reducing the risk of barrier breakdown of the magnetic tunnel junction and improving the reliability of the device.
Specifically, at least two magnetic tunnel junctions may be provided side by side on the strong spin orbit coupling layer 4, and preferably, n (n is a positive integer greater than 2) Magnetic Tunnel Junctions (MTJ) may be provided 0 、MTJ 1 、MTJ 2 ……MTJ n ) The arrangement direction of the n magnetic tunnel junctions is the longitudinal direction of the strong spin orbit coupling layer 4, two sides of the two transverse sides of the strong spin orbit coupling layer 4 corresponding to the position of each magnetic tunnel junction are respectively provided with a first input electrode 5 and a first output electrode 6, and the first input electrode 5 and the first output electrode 6 are electrically contacted with the strong spin orbit coupling layer 4 to be electrically connected with the magnetic tunnel junctions. Wherein the current I can be input along the longitudinal direction of the multiple strong spin orbit coupling layers 4 Y Edge of the first signal and current I Y The vertical direction corresponds to the input current I of each magnetic tunnel junction X0 、I X1 、I X2 ……I Xn The second signal of (2).
In a preferred embodiment, a second input electrode 7 and a second output electrode 8 for inputting a first signal are provided on both sides of the strong spin orbit coupling layer in the extending direction. The second input electrode 7 and the second output electrode 8 are respectively in electrical contact with two longitudinal ends of the strong spin orbit coupling layer, the current of the first signal can be input into the strong spin orbit coupling layer through the second input electrode 7, and the second output electrode 8 can adopt simple arrangement modes such as grounding and the like.
In a preferred embodiment, the magnetic tunnel junction comprises a free layer 3 in electrical contact with the strong spin-orbit coupling layer 4, and a barrier layer 2 and a fixed layer 1 sequentially disposed over the free layer 3. It is understood that one magnetic tunnel junction represents one memory cell, which can be used to store one data. In an optional embodiment, an upper electrode 9 may be further disposed above the fixed layer 1 of the magnetic tunnel junction, the upper electrode 9 may be electrically connected to an external reading circuit, when external reading is required, the external reading circuit may input a detected current or voltage signal to the magnetic tunnel junction through the upper electrode 9, and determine a resistance state of the magnetic tunnel junction by detecting a change in the current or voltage passing through the magnetic tunnel junction, thereby obtaining logic data stored in the magnetic tunnel junction, and achieving a purpose of reading data of the memory.
Preferably, the material of the free layer 3 and the fixed layer 1 is a ferromagnetic metal, and the barrier layer 2 is an oxide. The magnetic tunnel junction has perpendicular magnetic anisotropy, which means that the magnetization directions of the free layer 3 and the pinned layer 1 forming the magnetic tunnel junction are in the perpendicular direction. The ferromagnetic metal can be a mixed metal material formed by at least one of cobalt iron CoFe, cobalt iron boron CoFeB or nickel iron NiFe, and the proportion of the mixed metal materials can be the same or different. The oxide can be one of magnesium oxide, MgO, or aluminum oxide, Al2O3, and the like, and is used for generating a tunneling magnetoresistance effect. In practical applications, the ferromagnetic metal and the oxide may be made of other feasible materials, and the invention is not limited to this.
The free layer 3 of the magnetic tunnel junction is electrically contacted with the strong spin orbit coupling layer 4, all layers of the magnetic tunnel junction can be sequentially plated on the strong spin orbit coupling layer 4 from bottom to top by the traditional methods of ion beam epitaxy, atomic layer deposition or magnetron sputtering and the like, and then a plurality of magnetic tunnel junctions are prepared and formed by the traditional nanometer device processing technologies of photoetching, etching and the like.
In a preferred embodiment, the magnetic tunnel junction is an ellipse, and the major axis and the minor axis of the magnetic tunnel junction and the longitudinal and transverse two symmetric axes of the strong spin-orbit coupling layer 4 form a preset included angle. The magnetic tunnel junction and the strong spin orbit coupling layer 4 can form dislocation by enabling a long axis and a short axis of the magnetic tunnel junction and two longitudinal and transverse symmetrical axes of the strong spin orbit coupling layer 4 to form a certain preset included angle, so that when a first signal and a second signal are input from two orthogonal longitudinal and transverse directions of the strong spin orbit coupling layer 4 respectively, the direction of the magnetic moment of the free layer 3 electrically contacted with the strong spin orbit coupling layer 4 can be changed, the resistance state of the magnetic tunnel junction is changed, the magnetic moment of the free layer 3 is parallel or antiparallel to the magnetic moment of the fixed layer 1, so that the magnetic tunnel junction presents two different resistance states, and the different resistance states are defined to respectively represent that logic '0' is written and logic '1' is written, so that the purpose of data writing can be realized.
In a preferred embodiment, the strong spin orbit coupling layer 4 is a strong spin orbit coupling layer made of a heavy metal film, an antiferromagnetic film or other materials. The heavy metal film or the antiferromagnetic film can be made into a rectangle, the top area of the heavy metal film or the antiferromagnetic film needs to be larger than the bottom area of the outline formed by all the magnetic tunnel junctions so as to be capable of arranging a plurality of magnetic tunnel junctions, and the bottom shapes of the magnetic tunnel junctions are completely embedded into the top shapes of the heavy metal film or the antiferromagnetic film. Preferably, the material of the strong spin orbit coupling layer may be one of platinum Pt, tantalum Ta, or tungsten W. In practical applications, the strong spin-orbit coupling layer may also be formed by using other feasible materials, which is not limited by the present invention.
The invention will be further illustrated by means of a specific example. In a specific example, 4 magnetic tunnel junctions (MTJ0, MTJ1, MTJ2, and MTJ3) are arranged side by side on the heavy metal thin film as the strong spin orbit coupling layer 4, the arrangement direction of the 4 magnetic tunnel junctions is the longitudinal direction of the heavy metal thin film, the first input electrode 5 and the first output electrode 6 are respectively arranged on both sides of the heavy metal thin film in the transverse direction corresponding to the position of each magnetic tunnel junction, and the first input electrode 5 and the first output electrode 6 are electrically contacted with the heavy metal thin film to be electrically connected with the magnetic tunnel junctions. Compared with a spin orbit torque magnetic memory adopting three-port magnetic tunnel junctions, the magnetic tunnel junction memory has the advantages that the number of access control transistors is reduced, the integration level is improved, and the storage density is improved.
As shown in FIG. 2 and FIG. 3, before data is not written, the resistance states of the 4 magnetic tunnel junctions may be different, for example, at time t0 shown in FIG. 3, MTJ0, MTJ1, MTJ2 and MTJ3 store logic data of "0", "1" and "0", respectively, wherein SA 0 、SA 1 、SA 2 And SA 3 Respectively representing the logical data stored in MTJ0, MTJ1, MTJ2, and MTJ 3. In order to store new data, it is necessary to input a first signal to the strong spin-orbit coupling layer 4 at time t1 to make all magnetic tunnel junctions in the first resistance state, i.e., to input a unidirectional current I in the Y direction (longitudinal direction) Y To make all ofThe magnetic moments of the free layers 3 of the magnetic tunnel junctions are consistent, the magnetic moments of the fixed layers 1 of all the magnetic tunnel junctions are always kept unchanged, and the resistance states of all the magnetic tunnel junctions are consistent and are in a first resistance state, namely a low resistance state. At this time, MTJ0, MTJ1, MTJ2, and MTJ3 store logical data of "0", and "0", respectively.
Further, when new data is written, a second signal may be input to the first input electrode 5 of the magnetic tunnel junction to be written at time t2, so that the magnetic tunnel junction to be written assumes a second resistance state, that is, a high resistance state. In this embodiment, a unidirectional current I is input to MTJ1 in the X direction (lateral direction) perpendicular to the Y direction X1 The magnetic moment of free layer 3 of MTJ1 is reversed so that the resistance state of the magnetic tunnel junction changes to a second resistance state, i.e., a high resistance state. Writing and updating of the data stored in the magnetic tunnel junction can thereby be achieved. At this time, the logical data stored by the MTJ0, the MTJ1, the MTJ2, and the MTJ3 are "0", "1", "0", and "0", respectively, where m is z1 Representing the change in the perpendicular component of the free layer unit moment of MTJ1 during data writing. The invention adopts the unidirectional write current, can solve the source electrode degradation effect of the transistor, does not need an external magnetic field for auxiliary write, better meets the actual production requirement and is easier to realize. The SOT writing speed is fast, can reach subnanosecond level, and is much faster than the traditional Spin Transfer Torque (STT).
The data stored in the magnetic tunnel junction is only determined by the current of the last input signal, so that the data in the storage unit can be erased and written in by introducing the current to the magnetic tunnel junction, and the resistance state of each magnetic tunnel junction can be determined according to whether the current at the last time is the first signal or the second signal, so that the data written in the last time can be determined without additionally arranging a complex reading module and an external magnetic field. The information stored in the magnetic tunnel junction is only related to the path of the last write current and is not related to the times of the write current and the initial resistance state of the magnetic tunnel junction, so that the circuit design can be simplified, and the performance and the efficiency of the memory can be greatly improved.
It should be noted that, in this embodiment, the first resistance state is taken as a low resistance state, and the second resistance state is taken as a high resistance state as an example, in practical applications, the first resistance state may also be set as a high resistance state, the second resistance state is taken as a low resistance state, the low resistance state may represent a logic number "0", the high resistance state may represent a logic data "1", and in practical applications, the low resistance state may also represent a logic number "0", and the high resistance state may represent a logic data "1", which is merely exemplified in this embodiment, and does not limit the protection scope of the present invention.
Based on the same principle, the embodiment also discloses a data storage device. As shown in fig. 4, in the present embodiment, the data storage device includes a magnetic memory 10, a writing module 20, and a reading module 30 according to the present embodiment.
The writing module 20 is connected to the strong spin orbit coupling layer 4, the first input electrode 5, and the first output electrode 6, and configured to input a first signal to the strong spin orbit coupling layer 4 during resetting to make all magnetic tunnel junctions in a first resistance state, and input a second signal to the first input electrode of the magnetic tunnel junction to be written during data writing to make the magnetic tunnel junction to be written in a second resistance state.
The reading module 30 is configured to obtain signals input to all magnetic tunnel junctions by the writing module during data writing, and obtain state signals corresponding to resistance states of all magnetic tunnel junctions. That is, the reading module 30 can obtain whether the writing module 20 inputs the second signal to the magnetic tunnel junction, so that the resistance state of the magnetic tunnel junction is changed, and thus the logic data stored in each magnetic tunnel junction is determined, and further the state signal corresponding to the logic data stored in each magnetic tunnel junction is obtained.
Since the principle of solving the problem of the data storage device is similar to that of the magnetic memory, the implementation of the data storage device can be referred to the implementation of the magnetic memory, and is not described herein again.
Based on the same principle, the embodiment also discloses a control method of the magnetic memory. As shown in fig. 5, in this embodiment, the method includes:
s100: at time t1, a first signal is input to the strong spin-orbit coupling layer 4 to cause all magnetic tunnel junctions to assume a first resistance state.
S200: at time t2, a second signal is input to the first input electrode of the magnetic tunnel junction to be written to cause the magnetic tunnel junction to be written to assume a second resistance state.
In a preferred embodiment, as shown in fig. 6, the method may further include:
s300: and acquiring signals input to all the magnetic tunnel junctions by the write-in module during data writing, and acquiring state signals corresponding to the resistance states of all the magnetic tunnel junctions.
Since the principle of solving the problem by the method is similar to that of the magnetic memory, the implementation of the method can be referred to the implementation of the magnetic memory, and is not described herein again.
The systems, devices, modules or units illustrated in the above embodiments may be implemented by a computer chip or an entity, or by a product with certain functions. A typical implementation device is a computer device, which may be, for example, a personal computer, a laptop computer, a cellular telephone, a camera phone, a smart phone, a personal digital assistant, a media player, a navigation device, an email device, a game console, a tablet computer, a wearable device, or a combination of any of these devices.
In a typical example, the computer device comprises in particular a memory, a processor and a computer program stored on the memory and executable on the processor, the processor implementing the method performed by the client as described above when executing the program or the processor implementing the method performed by the server as described above when executing the program.
Referring now to FIG. 7, shown is a schematic diagram of a computer device 600 suitable for use in implementing embodiments of the present application.
As shown in fig. 7, the computer apparatus 600 includes a Central Processing Unit (CPU)601 which can perform various appropriate works and processes according to a program stored in a Read Only Memory (ROM)602 or a program loaded from a storage section 608 into a Random Access Memory (RAM)) 603. In the RAM603, various programs and data necessary for the operation of the system 600 are also stored. The CPU601, ROM602, and RAM603 are connected to each other via a bus 604. An input/output (I/O) interface 605 is also connected to bus 604.
The following components are connected to the I/O interface 605: an input portion 606 including a keyboard, a mouse, and the like; an output section 607 including a Cathode Ray Tube (CRT), a liquid crystal feedback (LCD), and the like, and a speaker and the like; a storage section 608 including a hard disk and the like; and a communication section 609 including a network interface card such as a LAN card, a modem, or the like. The communication section 609 performs communication processing via a network such as the internet. The driver 610 is also connected to the I/O interface 605 as needed. A removable medium 611 such as a magnetic disk, an optical disk, a magneto-optical disk, a semiconductor memory, or the like is mounted on the drive 610 as necessary, so that a computer program read out therefrom is mounted as necessary on the storage section 608.
In particular, according to an embodiment of the present invention, the processes described above with reference to the flowcharts may be implemented as computer software programs. For example, embodiments of the invention include a computer program product comprising a computer program tangibly embodied on a machine-readable medium, the computer program comprising program code for performing the method illustrated in the flow chart. In such an embodiment, the computer program may be downloaded and installed from a network through the communication section 609, and/or installed from the removable medium 611.
Computer-readable media, including both permanent and non-permanent, removable and non-removable media, may implement the information storage by any method or technology. The information may be computer readable instructions, data structures, modules of a program, or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), Static Random Access Memory (SRAM), Dynamic Random Access Memory (DRAM), other types of Random Access Memory (RAM), Read Only Memory (ROM), Electrically Erasable Programmable Read Only Memory (EEPROM), flash memory or other memory technology, compact disc read only memory (CD-ROM), Digital Versatile Discs (DVD) or other optical storage, magnetic cassettes, magnetic tape magnetic disk storage or other magnetic storage devices, or any other non-transmission medium that can be used to store information that can be accessed by a computing device. As defined herein, a computer readable medium does not include a transitory computer readable medium such as a modulated data signal and a carrier wave.
For convenience of description, the above devices are described as being divided into various units by function, and are described separately. Of course, the functionality of the units may be implemented in one or more software and/or hardware when implementing the present application.
The present invention is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the invention. It will be understood that each flow and/or block of the flowchart illustrations and/or block diagrams, and combinations of flows and/or blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
It should also be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
As will be appreciated by one skilled in the art, embodiments of the present application may be provided as a method, system, or computer program product. Accordingly, the present application may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present application may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
The application may be described in the general context of computer-executable instructions, such as program modules, being executed by a computer. Generally, program modules include routines, programs, objects, components, data structures, etc. that perform particular tasks or implement particular abstract data types. The application may also be practiced in distributed computing environments where tasks are performed by remote processing devices that are linked through a communications network. In a distributed computing environment, program modules may be located in both local and remote computer storage media including memory storage devices.
All the embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the system embodiment, since it is substantially similar to the method embodiment, the description is simple, and for the relevant points, reference may be made to the partial description of the method embodiment.
The above description is only an example of the present application and is not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.
Claims (11)
1. The control method of the magnetic memory is characterized in that the magnetic memory comprises a strong spin orbit coupling layer and a plurality of magnetic tunnel junctions, wherein the magnetic tunnel junctions are arranged on the strong spin orbit coupling layer and electrically contacted with the strong spin orbit coupling layer, and a first input electrode and a first output electrode which are connected with the strong spin orbit coupling layer are arranged on the strong spin orbit coupling layer corresponding to two sides of each magnetic tunnel junction;
the magnetic tunnel junction has perpendicular magnetic anisotropy, the length-width ratio of the magnetic tunnel junction is not 1, and a preset included angle is formed between the symmetry axis of the magnetic tunnel junction and the symmetry axis of the corresponding strong spin orbit coupling layer;
the method comprises the following steps:
at the time t1, inputting a first signal to the extension direction of the strong spin orbit coupling layer to make all the magnetic tunnel junctions in a first resistance state;
at time t2, a second signal is input to the first input electrode of the magnetic tunnel junction to be written to cause the magnetic tunnel junction to be written to assume a second resistance state.
2. The method of controlling a magnetic memory according to claim 1, further comprising:
and acquiring signals input to all the magnetic tunnel junctions by the write-in module during data writing, and acquiring state signals corresponding to the resistance states of all the magnetic tunnel junctions.
3. The method of claim 1, wherein the magnetic tunnel junction comprises a free layer in electrical contact with the strong spin-orbit coupling layer, and a barrier layer and a fixed layer sequentially disposed over the free layer.
4. The method of claim 3, wherein the free layer and the fixed layer are made of ferromagnetic metal, and the barrier layer is made of oxide.
5. The method of claim 1, wherein the magnetic tunnel junction is elliptical or rectangular.
6. The method of claim 1, wherein the strong spin orbit coupling layer is a heavy metal film or an antiferromagnetic film.
7. The method of claim 6, wherein the material of the heavy metal thin film is one of platinum Pt, tantalum Ta, or tungsten W.
8. The method of claim 1, wherein a second input electrode and a second output electrode for inputting the first signal are disposed on two sides of the extending direction of the strong spin orbit coupling layer.
9. A data storage device comprising a magnetic memory, a write module and a read module;
the magnetic memory comprises a strong spin orbit coupling layer and a plurality of magnetic tunnel junctions, wherein the magnetic tunnel junctions are arranged on the strong spin orbit coupling layer and electrically contacted with the strong spin orbit coupling layer, and a first input electrode and a first output electrode which are connected with the strong spin orbit coupling layer are arranged on the two sides of each magnetic tunnel junction of the strong spin orbit coupling layer; the magnetic tunnel junction has perpendicular magnetic anisotropy, the length-width ratio of the magnetic tunnel junction is not 1, and a preset included angle is formed between a symmetric axis of the magnetic tunnel junction and a symmetric axis of the corresponding strong spin orbit coupling layer;
the write module is respectively connected with the strong spin orbit coupling layer, the first input electrode and the first output electrode, and is used for inputting a first signal to the strong spin orbit coupling layer to enable all magnetic tunnel junctions to be in a first resistance state during resetting and inputting a second signal to the first input electrode of the magnetic tunnel junction to be written during data writing to enable the magnetic tunnel junction to be written to be in a second resistance state;
the reading module is used for acquiring signals input to all the magnetic tunnel junctions by the writing module during data writing, and acquiring state signals corresponding to the resistance states of all the magnetic tunnel junctions.
10. A computer device comprising a memory, a processor, and a computer program stored on the memory and executable on the processor,
the processor, when executing the program, implements the method of any of claims 1-8.
11. A computer-readable medium, having stored thereon a computer program,
the program when executed by a processor implementing the method according to any one of claims 1-8.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109637569A (en) * | 2018-11-23 | 2019-04-16 | 北京航空航天大学 | A kind of magnetic memory cell and its method for writing data |
| CN110232939A (en) * | 2019-06-10 | 2019-09-13 | 中国科学院半导体研究所 | The random storage unit of laser computer heating control magnetic, memory and logical device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109637569A (en) * | 2018-11-23 | 2019-04-16 | 北京航空航天大学 | A kind of magnetic memory cell and its method for writing data |
| CN110232939A (en) * | 2019-06-10 | 2019-09-13 | 中国科学院半导体研究所 | The random storage unit of laser computer heating control magnetic, memory and logical device |
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