CN113450849B - Magnetic storage unit, data writing method, memory and equipment - Google Patents
Magnetic storage unit, data writing method, memory and equipment Download PDFInfo
- Publication number
- CN113450849B CN113450849B CN202110183713.6A CN202110183713A CN113450849B CN 113450849 B CN113450849 B CN 113450849B CN 202110183713 A CN202110183713 A CN 202110183713A CN 113450849 B CN113450849 B CN 113450849B
- Authority
- CN
- China
- Prior art keywords
- magnetic tunnel
- magnetic
- tunnel junction
- resistance state
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 469
- 230000015654 memory Effects 0.000 title claims abstract description 54
- 238000003860 storage Methods 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 32
- 230000008878 coupling Effects 0.000 claims abstract description 79
- 238000010168 coupling process Methods 0.000 claims abstract description 79
- 238000005859 coupling reaction Methods 0.000 claims abstract description 79
- 210000004027 cell Anatomy 0.000 claims description 28
- 230000004888 barrier function Effects 0.000 claims description 15
- 238000004590 computer program Methods 0.000 claims description 12
- 210000000352 storage cell Anatomy 0.000 claims description 7
- 239000002885 antiferromagnetic material Substances 0.000 claims description 4
- 239000000696 magnetic material Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 abstract description 173
- 239000002356 single layer Substances 0.000 abstract description 4
- 102100035420 DnaJ homolog subfamily C member 1 Human genes 0.000 description 57
- 101000804122 Homo sapiens DnaJ homolog subfamily C member 1 Proteins 0.000 description 57
- 238000001514 detection method Methods 0.000 description 17
- 238000010586 diagram Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- 230000003993 interaction Effects 0.000 description 9
- 238000012545 processing Methods 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000005290 antiferromagnetic effect Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 229910001385 heavy metal Inorganic materials 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000006399 behavior Effects 0.000 description 3
- 230000001413 cellular effect Effects 0.000 description 3
- 230000005347 demagnetization Effects 0.000 description 3
- 230000005294 ferromagnetic effect Effects 0.000 description 3
- 230000005307 ferromagnetism Effects 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910003321 CoFe Inorganic materials 0.000 description 1
- 229910019236 CoFeB Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- ZDZZPLGHBXACDA-UHFFFAOYSA-N [B].[Fe].[Co] Chemical compound [B].[Fe].[Co] ZDZZPLGHBXACDA-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- FQMNUIZEFUVPNU-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co] FQMNUIZEFUVPNU-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- -1 mgO Chemical compound 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Abstract
The invention provides a magnetic storage unit, a data writing method, a memory and equipment, wherein the magnetic storage unit comprises a spin orbit coupling layer and a plurality of magnetic tunnel junctions arranged on the spin orbit coupling layer, the sizes of the magnetic tunnel junctions are different, and the distance length between two adjacent magnetic tunnel junctions is in a nanometer level; when currents with different current densities are respectively input to the spin orbit coupling layer along two opposite directions of the arrangement directions of the plurality of magnetic tunnel junctions, the combinations of the resistance states of the plurality of magnetic tunnel junctions are different, and the data writing of the plurality of magnetic tunnel junctions of a single layer can be realized through one-time current input.
Description
Technical Field
The present invention relates to the field of semiconductor technologies, and in particular, to a magnetic memory cell, a data writing method, a memory, and an apparatus.
Background
With the continuous reduction of the semiconductor process size, moore's law is slowed down, and the increase of leakage current and interconnection delay become the bottleneck of the conventional CMOS memory. The search for new generation solutions for memory technologies has become a focus of integrated circuit research, in which magnetic random access memories are of great interest. Compared with the traditional device, the Magnetic Random Access Memory (MRAM) has the advantages of unlimited erasing and writing times, nonvolatility, high reading and writing speed, radiation resistance and the like, is expected to become a universal memory, and is an ideal device for constructing a next-generation nonvolatile main memory and cache. A Magnetic Tunnel Junction (MTJ) is a basic memory cell of a Magnetic random access memory. The size of the magnetic tunnel junction can be reduced to below 40nm, and high-density integration is expected to be realized.
Against this background, researchers have proposed Multi-level cells (MLCs) composed of more than one MTJ to further increase the storage density of mass storage applications, the MLC requiring strict adjustment of the characteristics of each MTJ to achieve different threshold switching currents and resistance states with sufficient margins. A typical MLC is implemented by connecting two planar MTJs in series, the MTJs in series have different areas, the manufacturing process usually involves multiple etching steps, the process is complicated, and it is difficult to implement one-step writing of data.
Disclosure of Invention
An object of the present invention is to provide a magnetic memory cell that realizes data writing of a plurality of magnetic tunnel junctions of a single layer by one current input. Another object of the present invention is to provide a method for writing data into a magnetic storage cell. It is a further object of the present invention to provide a magnetic random access memory. It is a further object of this invention to provide a computer apparatus.
In order to achieve the above object, in one aspect, the present invention discloses a magnetic storage cell, including a spin-orbit coupling layer and a plurality of magnetic tunnel junctions disposed on the spin-orbit coupling layer, where the plurality of magnetic tunnel junctions have different sizes and a distance between two adjacent magnetic tunnel junctions is in the order of nanometers;
when currents with different current densities are respectively input to the spin orbit coupling layer along two opposite directions of the arrangement directions of the plurality of magnetic tunnel junctions, combinations of resistance states of the plurality of magnetic tunnel junctions are different.
Preferably, the plurality of magnetic tunnel junctions include a first magnetic tunnel junction and a second magnetic tunnel junction, and the arrangement directions of the first magnetic tunnel junction and the second magnetic tunnel junction include two opposite current input directions, namely a first direction and a second direction;
when a current with a first current density is input to the spin-orbit coupling layer along the first direction, the resistance state of the first magnetic tunnel junction is a first resistance state, and the resistance state of the second magnetic tunnel junction is a first resistance state;
when a current with a second current density is input to the spin-orbit coupling layer along the first direction, the resistance state of the first magnetic tunnel junction is a first resistance state, and the resistance state of the second magnetic tunnel junction is a second resistance state;
when a current with a third current density is input to the spin-orbit coupling layer along the second direction, the resistance state of the first magnetic tunnel junction is a second resistance state, and the resistance state of the second magnetic tunnel junction is a second resistance state;
when a current of a fourth current density is input to the spin-orbit coupling layer along the second direction, the resistance state of the first magnetic tunnel junction is a second resistance state, and the resistance state of the second magnetic tunnel junction is a first resistance state.
Preferably, the sizes of the plurality of magnetic tunnel junctions are sequentially increased or sequentially decreased along the arrangement direction of the plurality of magnetic tunnel junctions.
Preferably, the first magnetic tunnel junction and the second magnetic tunnel junction have in-plane anisotropy.
Preferably, the shape of the first magnetic tunnel junction and/or the second magnetic tunnel junction is one of an ellipse, a triangle, a rectangle, and a semicircle.
Preferably, at least one of the first magnetic tunnel junction and the second magnetic tunnel junction has perpendicular anisotropy;
the magnetic storage cell further includes an externally applied magnetic field disposed corresponding to the magnetic tunnel junction having perpendicular anisotropy or the magnetic tunnel junction having perpendicular anisotropy has an equivalent externally applied magnetic field.
Preferably, the shape of the magnetic tunnel junction having perpendicular anisotropy is circular or square.
Preferably, the memory cell comprises a magnetic field generating device for providing the externally applied magnetic field or equivalently the externally applied magnetic field; or,
the first magnetic tunnel junction and/or the second magnetic tunnel junction comprise a fixed layer, a barrier layer and a free layer which are sequentially arranged from top to bottom, and the section of at least one of the fixed layer, the barrier layer and the free layer is trapezoidal and is used for providing the external magnetic field; or,
the spin orbit coupling layer is made of an antiferromagnetic material, and forms an exchange bias field with the free layer and is used for providing the external magnetic field; or,
the magnetic tunnel junction comprises a magnetic material layer for providing the externally applied magnetic field; or,
the magnetic tunnel junction has a shape capable of forming a shape anisotropy field for providing an equivalent magnetic field of the externally applied magnetic field; or,
the free layer has a perpendicular anisotropy of gradient for providing an equivalent magnetic field to the externally applied magnetic field.
The invention also discloses a data writing method of the magnetic storage unit, which comprises the following steps:
determining the input direction and the current density of current according to the combination of data to be written, wherein the input direction is one of two opposite directions of the arrangement directions of the plurality of magnetic tunnel junctions;
and inputting current to the spin orbit coupling layer according to the input direction so that the combination of the resistance states of the plurality of magnetic tunnel junctions corresponds to the combination of the data to be written.
The invention also discloses a magnetic random access memory which comprises a plurality of magnetic storage units arranged in an array.
The invention also discloses a computer device comprising a memory, a processor and a computer program stored on the memory and executable on the processor,
the processor and/or the memory include magnetic storage units as described above.
The invention keeps the distance between two adjacent Magnetic tunnel junctions in the multiple Magnetic tunnel junctions at a nanometer level by setting the distance between the multiple Magnetic tunnel junctions on the spin orbit coupling layer, and the multiple Magnetic tunnel junctions arranged at the nanometer level distance can be regarded as a plurality of arranged small magnets/nanometer junctions, so that the Magnetic storage unit can be equivalent to a Magnetic Quantum Cell Automata (MQCA). Magnetic dipole interactions (magnetic dipole interactions) between magnets are formed among the magnetic tunnel junctions arranged on the magnetic storage unit, and the magnetic dynamic behaviors of the free layers of the adjacent magnetic tunnel junctions can be influenced by utilizing the ferromagnetism of the small magnets/nano junctions, so that data transmission or calculation is realized. When currents with different current densities are respectively input to the spin orbit coupling layer along two opposite directions of the arrangement directions of the plurality of magnetic tunnel junctions, the combination of the resistance states of the first magnetic tunnel junction and the second magnetic tunnel junction is different, and the writing of any data combination of a two-bit (bit) storage unit formed by the first magnetic tunnel junction and the second magnetic tunnel junction is realized.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 illustrates a schematic diagram of one embodiment of a magnetic memory cell of the present invention;
FIG. 2 illustrates a top view of one embodiment of a magnetic memory cell of the present invention;
FIG. 3 illustrates a schematic diagram of one embodiment of a magnetic memory cell of the present invention including three magnetic tunnel junctions;
FIG. 4 is a flow chart of one embodiment of a method of writing data to a magnetic storage cell in accordance with the present invention;
FIG. 5 illustrates a schematic block diagram of a computer device suitable for use in implementing embodiments of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
According to one aspect of the present invention, the present embodiment discloses a magnetic memory cell. As shown in fig. 1 and fig. 2, in this embodiment, the magnetic storage unit includes a spin-orbit coupling layer A1 and a plurality of magnetic tunnel junctions disposed on the spin-orbit coupling layer A1, where the plurality of magnetic tunnel junctions have different sizes and a length of a gap d between two adjacent magnetic tunnel junctions is nanometer.
When currents with different current densities are respectively input to the spin-orbit coupling layer A1 along two opposite directions of the arrangement directions of the plurality of magnetic tunnel junctions, combinations of resistance states of the plurality of magnetic tunnel junctions are different.
The invention keeps the distance between two adjacent Magnetic tunnel junctions in the plurality of Magnetic tunnel junctions at a nanometer level by setting the distance between the plurality of Magnetic tunnel junctions on the spin orbit coupling layer A1, and the plurality of Magnetic tunnel junctions arranged at the nanometer level distance can be regarded as a plurality of arranged small magnets/nanometer junctions, so that the Magnetic storage unit can be equivalent to a Magnetic Quantum Cellular Automata (MQCA). Magnetic dipole interactions (magnetic dipole interactions) between magnets are formed among the magnetic tunnel junctions arranged on the magnetic storage unit, and the magnetic dynamic behaviors of the adjacent magnetic tunnel junction free layers B1 can be influenced by utilizing the ferromagnetism of the small magnets/nano junctions, so that data transmission or calculation is realized. When currents with different current densities are respectively input to the spin orbit coupling layer A1 along two opposite directions of the arrangement directions of the magnetic tunnel junctions, combinations of resistance states of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 are different, and random data combination writing of a two-bit (bit) storage unit formed by the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 is achieved.
It should be noted that the magnetic dipole interactions (magnetic dipole interactions) refer to the magnetic dynamic behavior of the small magnets/nano-junctions affecting each other due to the ferromagnetism of the small magnets/nano-junctions when the small magnets/magnetic tunnel junctions are very close to each other. Magnetic Quantum dot Cellular Automata (MQCA) refers to a structure that uses iron dipole interaction between magnets to achieve data transfer or calculation using a specific arrangement of small magnets/nano-junctions.
In a preferred embodiment, as shown in fig. 1, the plurality of magnetic tunnel junctions includes a first magnetic tunnel junction MTJ1 and a second magnetic tunnel junction MTJ2, and the arrangement directions of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 include two opposite current input directions, i.e., a first direction and a second direction.
Specifically, when a current J1 with a first current density is input to the spin-orbit coupling layer A1 along the first direction, the resistance state of the first magnetic tunnel junction MTJ1 is a first resistance state, and the resistance state of the second magnetic tunnel junction MTJ2 is a first resistance state; when a current J2 with a second current density is input to the spin-orbit coupling layer A1 along the first direction, the resistance state of the first magnetic tunnel junction MTJ1 is a first resistance state, and the resistance state of the second magnetic tunnel junction MTJ2 is a second resistance state; when a current J3 with a third current density is input to the spin-orbit coupling layer A1 along the second direction, the resistance state of the first magnetic tunnel junction MTJ1 is a second resistance state, and the resistance state of the second magnetic tunnel junction MTJ2 is a second resistance state; when a current J4 with a fourth current density is input to the spin-orbit coupling layer A1 along the second direction, the resistance state of the first magnetic tunnel junction MTJ1 is the second resistance state, and the resistance state of the second magnetic tunnel junction MTJ2 is the first resistance state.
In a specific example, as shown in fig. 1, the spin-orbit coupling layer A1 includes a length direction along an x-axis of a rectangular coordinate system and a width direction along a y-axis of the rectangular coordinate system, and two magnetic tunnel junctions are arranged along the length direction of the spin-orbit coupling layer A1. Wherein the length direction comprises a first direction and a second direction which are opposite. The two ends of the spin orbit coupling layer A1 in the length direction are respectively provided with a first electrode S3 and a second electrode S4 which are respectively used for inputting current + Ix and-Ix to the spin orbit coupling layer A1 along the first direction and the second direction. Wherein, hex is the direction of the external magnetic field or the equivalent external magnetic field. The distance length d between the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 is nano-scale, that is, d is a micro distance of several nanometers, and the distance between the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 is very close, so that the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 have iron dipole interaction, that is, the writing of specific data combinations of a plurality of single-layer magnetic tunnel junctions can be realized by one-time current input, and the process complexity of the storage unit is reduced.
It is understood that, in a preferred embodiment, at least one of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 may include a fixed layer B3, a barrier layer B2, and a free layer B1, which are sequentially disposed from top to bottom. The bottom surface of the free layer B1 is fixedly connected with the spin orbit coupling layer A1. The resistance of the magnetic tunnel junction depends on the magnetization directions of the fixed layer B3 and the free layer B1, and the magnetization directions of the free layer B1 and the fixed layer B3 are determined by the magnetic moment directions. When the magnetic moment directions of the fixed layer B3 and the free layer B1 are the same, the magnetic tunnel junction is in a low resistance state (low resistance state), and when the magnetic moment directions of the fixed layer B3 and the free layer B1 are opposite, the magnetic tunnel junction is in a high resistance state (high resistance state). The high resistance state and the low resistance state of the magnetic tunnel junction may be respectively associated with different data in advance, for example, it is preset that the high resistance state corresponds to data "+1" and the low resistance state corresponds to data "-1", a current or a voltage is input to the magnetic tunnel junction through the reading circuit, the resistance state of the magnetic tunnel junction may be determined to be the high resistance state or the low resistance state according to a change in the current or the voltage, and the data stored in the magnetic tunnel junction may be determined to be "+1" or "-1" according to the resistance state of the magnetic tunnel junction. The ranges of the high resistance state and the low resistance state are determined by a common technical means in the art, and a person skilled in the art can determine the resistance ranges of the high resistance state and the low resistance state of the magnetic tunnel junction according to common knowledge, which is not described herein again.
Therefore, by setting the magnetic moment direction of the fixed layer B3 and the corresponding relationship between the high resistance state and the low resistance state of the magnetic tunnel junction and the logic numbers "-1" and "+1", when the current J2 with the first current density J1 and the second current density is input to the spin-orbit coupling layer A1 in the first direction and the current J4 with the third current density J3 and the fourth current density is input to the spin-orbit coupling layer A1 in the second direction, the combinations of the resistance states of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 are different, that is, the data combinations storing the logic number combinations "-1, -1", "1, +1", "1" -1", and" 1", are obtained, respectively, as shown in table 1, the writing of any data combination of the two-bit (bit) memory cells formed by the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 is realized, the data writing of a single layer is realized by one current input, and the process complexity of the memory cells is reduced. In practical application, when currents J1 to J4 with first to fourth current densities are respectively input along a first direction and a second direction by adjusting the magnetic moment direction of the fixed layer B3 and the corresponding relation between the resistance state of the magnetic tunnel junction and a logic number, the writing storage of corresponding data combination is realized.
TABLE 1
It can be understood that, the magnetic moment directions of the free layers B1 of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 are respectively deflected toward the first easy magnetic axis and the second easy magnetic axis under the action of the spin orbit coupling layer A1 after the current is input, wherein the first easy magnetic axis includes a first magnetic moment direction and a second magnetic moment direction which are opposite, the second easy magnetic axis includes a third magnetic moment direction and a fourth magnetic moment direction which are opposite, and the deflection directions of the magnetic moment directions of the free layers B1 of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 are different according to the current direction and the current density of the input current. In a specific example, when the current J2 with the first current density J1 and the second current density is respectively input to the spin-orbit coupling layer A1 along the first direction and the current J4 with the third current density J3 and the fourth current density is respectively input to the spin-orbit coupling layer A1 along the second direction, the magnetic moment directions of the free layers B1 of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 are respectively the "first magnetic moment direction and the third magnetic moment direction", "the first magnetic moment direction and the fourth magnetic moment direction", "the second magnetic moment direction and the fourth magnetic moment direction", and "the second magnetic moment direction and the third magnetic moment direction", and then the magnetic moment directions of the fixed layers B3 of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 can be preset to realize the write storage of different data combinations. For example, it is assumed that the magnetic moment directions of the pinned layer B3 of the first and second magnetic tunnel junctions MTJ1 and MTJ2 are the first and third magnetic moment directions, respectively. After a current J1 with a first current density is input to the spin orbit coupling layer A1 along a first direction, the magnetic moment directions of the fixed layer B3 and the free layer B1 of the first magnetic tunnel junction MTJ1 are the same, the first magnetic tunnel junction MTJ1 is in a low resistance state, the magnetic moment directions of the fixed layer B3 and the free layer B1 of the second magnetic tunnel junction MTJ2 are the same, and the second magnetic tunnel junction MTJ2 is in a low resistance state; after a current J2 with a second current density is input to the spin orbit coupling layer A1 along the first direction, the magnetic moment directions of the fixed layer B3 and the free layer B1 of the first magnetic tunnel junction MTJ1 are the same, the first magnetic tunnel junction MTJ1 is in a low resistance state, the magnetic moment directions of the fixed layer B3 and the free layer B1 of the second magnetic tunnel junction MTJ2 are opposite, and the second magnetic tunnel junction MTJ2 is in a high resistance state; after a current J3 with a third current density is input to the spin orbit coupling layer A1 along the second direction, the magnetic moment directions of the fixed layer B3 and the free layer B1 of the first magnetic tunnel junction MTJ1 are opposite, the first magnetic tunnel junction MTJ1 is in a high resistance state, the magnetic moment directions of the fixed layer B3 and the free layer B1 of the second magnetic tunnel junction MTJ2 are opposite, and the second magnetic tunnel junction MTJ2 is in a high resistance state; after a current J4 with a fourth current density is input to the spin orbit coupling layer A1 along the second direction, the magnetic moment directions of the fixed layer B3 and the free layer B1 of the first magnetic tunnel junction MTJ1 are opposite, the first magnetic tunnel junction MTJ1 is in a high resistance state, the magnetic moment directions of the fixed layer B3 and the free layer B1 of the second magnetic tunnel junction MTJ2 are the same, and the second magnetic tunnel junction MTJ2 is in a low resistance state. Further, if it is preset that the low resistance state of the magnetic tunnel junction corresponds to a logic number "-1" and the high resistance state corresponds to a logic number "+1", then, after a current J2 with a first current density J1 and a second current density is respectively input to the spin-orbit coupling layer A1 along the first direction and a current J4 with a third current density J3 and a fourth current density is respectively input to the spin-orbit coupling layer A1 along the second direction, the storage of four data combinations "-1, -1", "-1, +1" and "+1, -1" can be respectively realized.
Note that in this preferred embodiment, the magnetic memory cell includes two magnetic tunnel junctions. In other embodiments, the magnetic storage unit may further include other numbers of magnetic tunnel junctions, for example, the magnetic storage unit shown in fig. 3 includes 3 magnetic tunnel junctions arranged in sequence, and the number of the magnetic tunnel junctions is not limited by the present invention.
In a preferred embodiment, the sizes of the plurality of magnetic tunnel junctions are sequentially increased or sequentially decreased along the arrangement direction of the plurality of magnetic tunnel junctions. It is to be understood that the pitch lengths d of each adjacent two of the plurality of magnetic tunnel junctions may be the same or different. E.g. a magnetic memory cell as shown in FIG. 3, d 1 And d 2 May be the same or different, and need only be maintained at the nanoscale, as the present invention is not limited in this respect. The sizes of the plurality of magnetic tunnel junctions are sequentially increased or decreased progressively along the arrangement direction of the plurality of magnetic tunnel junctions, so that the iron dipole interaction of the plurality of magnetic tunnel junctions which are sequentially arranged is sequentially increased or decreased progressively, and the design of data transmission or calculation which can be realized by the magnetic storage unit is facilitated.
In a preferred embodiment, the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 have in-plane anisotropy. It is understood that, for a magnetic tunnel junction having in-plane anisotropy, the magnetic moment direction of the free layer B1 of the magnetic tunnel junction can be deflected toward the easy magnetic axis by an SOT (Spin-orbit) current.
Preferably, the shape of the first magnetic tunnel junction MTJ1 and/or the second magnetic tunnel junction MTJ2 may be one of an ellipse, a triangle, a rectangle, and a semicircle, as shown in fig. 3. It is understood that the shapes of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 are preferably selected to be elliptical shapes, and the major axis of the elliptical shapes is the easy magnetic axis. When a current is input to the spin orbit coupling layer A1, the final direction of the magnetic moment direction of the free layer B1 after the current input is ended is the easy magnetic axis direction based on the SOT principle. In other embodiments, rectangles, triangles, and semicircles may also achieve the same effect. In practical applications, a person skilled in the art can flexibly set the shapes of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 according to requirements, the present invention is not limited to this, and a technical solution of a magnetic memory cell using magnetic tunnel junctions with other feasible shapes based on the same inventive concept is also within the protection scope of the present invention.
In other embodiments, at least one of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 has perpendicular anisotropy. It is understood that one or both of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 may also employ a magnetic tunnel junction having perpendicular anisotropy. For the magnetic tunnel junction with the perpendicular anisotropy, the magnetic storage unit further comprises an external magnetic field arranged corresponding to the magnetic tunnel junction with the perpendicular anisotropy or the magnetic tunnel junction with the perpendicular anisotropy has an equivalent external magnetic field. For example, in a specific example, the first magnetic tunnel junction MTJ1 has a circular shape, and the second magnetic tunnel junction MTJ2 has an elliptical shape. Wherein the first magnetic tunnel junction MTJ1 has perpendicular anisotropy, and the second magnetic tunnel junction MTJ2 has in-plane anisotropy. Therefore, the random access memory cell of this specific example needs to set an external magnetic field or an equivalent external magnetic field corresponding to the first magnetic tunnel junction MTJ1, so that the first magnetic tunnel junction MTJ1 can generate a corresponding change in the magnetic moment direction after the current is input to the spin-orbit coupling layer A1.
For the magnetic tunnel junction with the shape of an ellipse, a triangle, a rectangle or a semicircle, the shape of the magnetic tunnel junction is not completely symmetrical, and the shape anisotropy of the magnetic tunnel junction can replace the action of an external magnetic field. For the round or square magnetic tunnel junction, an external magnetic field needs to be provided or the round or square free layer B1 of the magnetic tunnel junction is subjected to the action of an equivalent external magnetic field by means of a structure of the magnetic tunnel junction, for example, the round or square magnetic tunnel junction comprises a fixed layer B3, a barrier layer B2 and a free layer B1 which are sequentially arranged from top to bottom, the section of the free layer B1 or the barrier layer B2 can be trapezoidal, and the equivalent external magnetic field is formed by arranging the trapezoidal section.
In alternative embodiments, the externally applied magnetic field or an equivalent externally applied magnetic field in the magnetic memory cell can be implemented in a variety of ways. Specifically, the externally applied magnetic field or the equivalent externally applied magnetic field may be formed by at least one of the following ways:
the storage unit comprises a magnetic field generating device for providing the external magnetic field or equivalently providing the external magnetic field;
the magnetic tunnel junction comprises a fixed layer B3, a barrier layer B2 and a free layer B1 which are sequentially arranged from top to bottom, and the section of at least one of the fixed layer B3, the barrier layer B2 and the free layer B1 is trapezoidal and is used for providing the equivalent external magnetic field;
the spin orbit coupling layer A1 is made of an antiferromagnetic material, and the spin orbit coupling layer A1 and the free layer B1 form an exchange bias field for providing the equivalent external magnetic field;
the magnetic tunnel junction comprises a layer of magnetic material (e.g., a Co layer) for providing the equivalent externally applied magnetic field;
the magnetic tunnel junction has a shape capable of forming a shape anisotropy field (inhomogeneous demagnetization field) for providing the equivalent externally applied magnetic field. In some embodiments, the magnetic tunnel junction may have a rectangular shape, an elliptical shape, an isosceles right-angle shape, and the like, and taking the elliptical shape as an example, a demagnetization field in the major axis direction is weaker than that in the minor axis direction, and the demagnetization field may be equivalent to an external magnetic field;
the free layer B1 has a perpendicular anisotropy of gradient for providing an equivalent magnetic field to the externally applied magnetic field. Specifically, when the magnetic tunnel junction is manufactured, the concentration of the target material can be adjusted, so that the free layer B1 has gradient perpendicular anisotropy, the symmetry of magnetic moment distribution is further destroyed, and the magnetic tunnel junction can be used for providing an equivalent external magnetic field.
It should be noted that the magnetic field generating device or the equivalent device capable of forming the external magnetic field is a conventional technical means in the art, and those skilled in the art can flexibly set the device according to the needs, and details are not described herein. In addition, an external magnetic field may be provided by making at least one of the fixed layer B3, the barrier layer B2, and the free layer B1 trapezoidal in cross section, by forming an exchange bias field with the free layer B1 using an antiferromagnetic material, by providing a magnetic material layer, or the like. In practical applications, the applied magnetic field may be formed by other feasible manners, which is not limited by the present invention.
In a preferred embodiment, in order to adjust the perpendicular anisotropy of the magnetic tunnel junction and the smoothness of each layer, the magnetic tunnel junction may further include at least one of the layer structures of an insertion layer, a pinning layer, a seed layer, and a capping layer. One or more layers of structures can be arranged according to actual requirements, and a person skilled in the art can arrange the magnetic tunnel junction structures in a top-down arrangement order according to the requirements, which is not limited in the present invention.
In a preferred embodiment, the magnetic storage unit further comprises a control module, configured to determine an input direction of a current and a current density according to a combination of data to be written, where the input direction is one of two opposite directions of the arrangement directions of the plurality of magnetic tunnel junctions. Inputting current to the spin orbit coupling layer A1 according to the input direction so that the combination of the resistance states of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 corresponds to the combination of the data to be written. It can be understood that the input direction and the current density of the current can be determined according to the predetermined current input direction, the current density and the combination of the data to be written corresponding to different data combinations stored in the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2, and the current with the corresponding current density can be input to the spin orbit coupling layer A1 according to the input direction to make the combination of the resistance states of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 different, so as to realize the deterministic writing of the data combination to be written.
In a preferred embodiment, the magnetic storage unit further includes a reading module, which can apply a detection current to the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2, and determine the logic number stored in the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 according to a variation of the detection current. Specifically, as shown in fig. 1, the reading module may input the detection current to the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 through the interface S1 and the interface S2, respectively, where the resistance state of the magnetic tunnel junction is a high resistance state or a low resistance state, and the change speeds of the currents of the detection current flowing through the high resistance state and the low resistance state of the magnetic tunnel junction are different, so that it can be determined whether the magnetic tunnel junction inputting the detection current is in the high resistance state or the low resistance state according to the change speeds of the detection current, and data reading is implemented. It should be noted that the interface S1 and the interface S2 may be different interfaces, and the independent detection currents are respectively input to the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 to respectively read data; the interface S1 and the interface S2 may also be the same interface, and the detection currents are input to the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 at the same time to respectively read data, and the detection currents are input to the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 in sequence to respectively read data, which can be set by a person skilled in the art according to actual requirements, and can also be set by a person skilled in the art according to actual requirements, and is a conventional technical means in the art, and will not be described herein again.
Preferably, the spin orbit coupling layer A1 may be rectangular, and the area of the top surface of the spin orbit coupling layer A1 is larger than the area occupied by the plurality of magnetic tunnel junctions provided in the spin orbit coupling layer A1, even though the plurality of magnetic tunnel junctions may be provided in the spin orbit coupling layer A1, and the outer edges of the plurality of magnetic tunnel junctions are located inside the outer edges of the spin orbit coupling layer A1. Among them, the spin orbit coupling layer A1 may be preferably a heavy metal strip film or an antiferromagnetic strip film.
It should be noted that two or more than two magnetic tunnel junctions on the spin orbit coupling layer A1 may be provided, and preferably, a plurality of magnetic tunnel junctions may be provided on the same spin orbit coupling layer A1, so that one-time data write operation to the plurality of magnetic tunnel junctions may be implemented, the number of control transistors inputting spin orbit torque current may be reduced, and thus, the integration level is improved and the power consumption of the circuit is reduced.
In a preferred embodiment, a top electrode may be provided on top of the magnetic tunnel junction, and a current input electrode and an output electrode may be provided on opposite sides of the spin-orbit coupling layer A1, respectively, for input of a detection current and a spin-orbit torque current. Among them, the material of the electrode is preferably any one of tantalum Ta, aluminum Al, gold Au, or copper Cu.
Preferably, the material of the free layer B1 and the fixed layer B3 may be a ferromagnetic metal, and the material of the barrier layer B2 may be an oxide. The ferromagnetic metal can be a mixed metal material formed by at least one of cobalt iron CoFe, cobalt iron boron CoFeB or nickel iron NiFe, and the proportion of the mixed metal materials can be the same or different. The oxide can be one of magnesium oxide, mgO, aluminum oxide, al2O3 and the like, and is used for generating a tunneling magnetoresistance effect. In practical applications, the ferromagnetic metal and the oxide may be made of other feasible materials, and the invention is not limited thereto.
The free layer B1 of the magnetic tunnel junction is fixedly contacted with the spin orbit coupling layer A1, each layer of the magnetic tunnel junction and the spin orbit coupling layer A1 can be sequentially plated on a substrate from bottom to top by the traditional methods of ion beam epitaxy, atomic layer deposition or magnetron sputtering and the like, and then two or more magnetic tunnel junctions are prepared and formed by the traditional nanometer device processing technologies of photoetching, etching and the like.
In a preferred embodiment, the spin-orbit coupling layer A1 is a spin-orbit coupling layer A1 made of a heavy metal film, an antiferromagnetic film, or other material. The heavy metal film or the antiferromagnetic film can be made into a rectangle, the top area of the heavy metal film or the antiferromagnetic film is preferably larger than the bottom area of the outline formed by all the magnetic tunnel junctions so as to be capable of arranging two or more magnetic tunnel junctions, and the bottom shapes of the magnetic tunnel junctions are completely embedded into the top shapes of the heavy metal film or the antiferromagnetic film. Preferably, the spin-orbit coupling layer A1 may be made of one of platinum Pt, tantalum Ta, or tungsten W. In practical applications, the spin-orbit coupling layer A1 may also be formed by using other feasible materials, which is not limited by the present invention.
In this embodiment, the first magnetic tunnel junction MTJ1 and/or the second magnetic tunnel junction MTJ2 includes a fixed layer B3 on top, a free layer B1 in contact with the spin-orbit coupling layer A1, and a barrier layer B2 disposed between the fixed layer B3 and the free layer B1, and the magnetic tunnel junction has a three-layer structure including only one free layer B1. In other embodiments, the free layer B1 may be provided in plural, i.e., two or more free layers B1. The magnetic tunnel junction includes a fixed layer B3 at the top, a plurality of free layers B1, and a barrier layer B2 disposed between each adjacent two layers, the free layer B1 at the lowermost layer being disposed in contact with the spin-orbit coupling layer A1. For example, in a specific example, when two free layers B1 are included, the magnetic memory cell structure may include a spin orbit coupling layer A1, a second free layer B1, a barrier layer B2, a first free layer B1, a barrier layer B2, and a fixed layer B3 sequentially disposed on the spin orbit coupling layer A1.
In summary, the magnetic memory cell of the present invention can realize the writing of the specific 2bit data combination by one current writing, without considering the initial resistance state in the magnetic tunnel junction, and the final resistance states of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 are determined only by the direction of the input current. The invention adopts spin orbit torque current to write data, and has high writing speed and low power consumption. The magnetic tunnel junction can adopt a completely symmetrical regular shape, is beneficial to the continuous miniaturization of the size of a magnetic random storage device, and improves the storage density. In addition, the spin orbit coupling layer A1 can adopt a rectangular regular shape, the spin orbit coupling layer A1 does not need to be processed, the spin orbit coupling layer can be manufactured without a complex process, and the process requirement is reduced.
Based on the same principle, the embodiment also discloses a data writing method of the magnetic storage unit. As shown in fig. 4, the method includes:
s100: and determining the input direction and the current density of the current according to the combination of the data to be written, wherein the input direction is one of two opposite directions of the arrangement directions of the plurality of magnetic tunnel junctions.
S200: and inputting current to the spin orbit coupling layer according to the input direction so that the combination of the resistance states of the plurality of magnetic tunnel junctions corresponds to the combination of the data to be written.
Specifically, when the magnetic storage unit further comprises a control module, the control module may determine an input direction of a current and a current density according to a combination of data to be written, where the input direction is one of two opposite directions of the arrangement directions of the plurality of magnetic tunnel junctions. Inputting current to the spin orbit coupling layer A1 according to the input direction so that the combination of the resistance states of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 corresponds to the combination of the data to be written. It can be understood that the input direction and the current density of the current can be determined according to the predetermined current input direction, the current density and the combination of data to be written corresponding to different data combinations stored in the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2, and the current with the corresponding current density is input to the spin orbit coupling layer A1 according to the input direction to make the combinations of resistance states of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 different, thereby realizing the deterministic writing of the data combination to be written.
In a preferred embodiment, when the magnetic storage unit further includes a read block, a sensing current may be applied to the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 through the read block, and the logic number stored in the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 is determined according to a variation of the sensing current. Specifically, as shown in fig. 1, the reading module may input the detection current to the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 through the interface S1 and the interface S2, respectively, where the resistance state of the magnetic tunnel junction is a high resistance state or a low resistance state, and the current change speeds of the detection current flowing through the high resistance state and the low resistance state are different, so that it may be determined whether the magnetic tunnel junction inputting the detection current is in the high resistance state or the low resistance state according to the change speed of the detection current, and data reading is implemented. It should be noted that the interface S1 and the interface S2 may be different interfaces, and the independent detection currents are respectively input to the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 to respectively read data; the interface S1 and the interface S2 may also be the same interface, and simultaneously the detection currents are input to the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 to respectively read data, or the detection currents are input to the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 in sequence to respectively read data, and a person skilled in the art can set the interface S1 and the interface S2 according to actual requirements, and a person skilled in the art can also set specific circuit structures of the control module and the reading module according to actual requirements, which is a conventional technical means in the art, and is not described herein again.
Since the principle of solving the problem by the method is similar to that of the above magnetic memory cell, the implementation of the method can be referred to the implementation of the above magnetic memory cell, and is not described herein again.
Based on the same principle, the embodiment also discloses a magnetic random access memory. The magnetic random access memory comprises a plurality of magnetic storage units arranged in an array.
Magnetic random access memory, including permanent and non-permanent, removable and non-removable media, may implement any method or technology for storing information. The information may be computer readable instructions, data structures, modules of a program, or other data. Examples of magnetic random access memory applications include, but are not limited to, random Access Memory (RAM), read Only Memory (ROM), electrically Erasable Programmable Read Only Memory (EEPROM), flash memory or other memory technology, compact disc read only memory (CD-ROM), digital Versatile Disks (DVD) or other optical storage, magnetic cassettes, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other non-transmission medium, which can be used to store information that can be accessed by a computing device.
Since the principle of solving the problem of the magnetic random access memory is similar to that of the magnetic storage unit, the implementation of the magnetic random access memory can be referred to the implementation of the magnetic storage unit, and is not described herein again.
Based on the same principle, the embodiment also discloses a computer device which comprises a memory, a processor and a computer program which is stored on the memory and can run on the processor.
The processor and/or the memory comprise magnetic storage units as described in this embodiment.
The magnetic storage unit illustrated in the above embodiments may be specifically provided in a product device having a certain function. A typical implementation device is a computer device, which may be, for example, a personal computer, laptop computer, cellular telephone, camera phone, smart phone, personal digital assistant, media player, navigation device, email device, game console, tablet computer, wearable device, or a combination of any of these devices.
In a typical example, the computer device specifically comprises a memory, a processor and a computer program stored on the memory and executable on the processor, the processor and/or the memory comprising the magnetic storage unit as described in the present embodiment.
Reference is now made to FIG. 5, which illustrates a block diagram of a computer device suitable for use in implementing embodiments of the present application.
As shown in fig. 5, the computer apparatus includes a Central Processing Unit (CPU) 601 which can perform various appropriate works and processes according to a program stored in a Read Only Memory (ROM) 602 or a program loaded from a storage section 608 into a Random Access Memory (RAM)) 603. In the RAM603, various programs and data necessary for system operation are also stored. The CPU601, ROM602, and RAM603 are connected to each other via a bus 604. An input/output (I/O) interface 605 is also connected to bus 604.
The following components are connected to the I/O interface 605: an input portion 606 including a keyboard, a mouse, and the like; an output section 607 including a Cathode Ray Tube (CRT), a liquid crystal feedback (LCD), and the like, and a speaker and the like; a storage section 608 including a hard disk and the like; and a communication section 609 including a network interface card such as a LAN card, a modem, or the like. The communication section 609 performs communication processing via a network such as the internet. The driver 610 is also connected to the I/O interface 605 as needed. A removable medium 611 such as a magnetic disk, an optical disk, a magneto-optical disk, a semiconductor memory, or the like is mounted on the drive 610 as necessary, so that a computer program read out therefrom is mounted as necessary on the storage section 608.
The present invention is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the invention. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
It should also be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrases "comprising a," "8230," "8230," or "comprising" does not exclude the presence of other like elements in a process, method, article, or apparatus comprising the element.
As will be appreciated by one skilled in the art, embodiments of the present application may be provided as a method, system, or computer program product. Accordingly, the present application may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present application may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
The application may be described in the general context of computer-executable instructions, such as program modules, being executed by a computer. Generally, program modules include routines, programs, objects, components, data structures, etc. that perform particular tasks or implement particular abstract data types. The application may also be practiced in distributed computing environments where tasks are performed by remote processing devices that are linked through a communications network. In a distributed computing environment, program modules may be located in both local and remote computer storage media including memory storage devices.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the system embodiment, since it is substantially similar to the method embodiment, the description is simple, and for the relevant points, reference may be made to the partial description of the method embodiment.
The above description is only an example of the present application and is not intended to limit the present application. Various modifications and changes may occur to those skilled in the art to which the present application pertains. Any modification, equivalent replacement, improvement or the like made within the spirit and principle of the present application shall be included in the scope of the claims of the present application.
Claims (10)
1. A magnetic storage unit is characterized by comprising a spin orbit coupling layer and a plurality of magnetic tunnel junctions arranged on the spin orbit coupling layer, wherein the magnetic tunnel junctions are different in size, and the distance between two adjacent magnetic tunnel junctions is in a nanometer level;
when currents with different current densities are respectively input to the spin orbit coupling layer along two opposite directions of the arrangement directions of the plurality of magnetic tunnel junctions, the combination of the resistance states of the plurality of magnetic tunnel junctions is different;
the plurality of magnetic tunnel junctions comprise a first magnetic tunnel junction and a second magnetic tunnel junction, and the arrangement directions of the first magnetic tunnel junction and the second magnetic tunnel junction comprise two opposite current input directions of a first direction and a second direction;
when a current with a first current density is input to the spin-orbit coupling layer along the first direction, the resistance state of the first magnetic tunnel junction is a first resistance state, and the resistance state of the second magnetic tunnel junction is a first resistance state;
when a current with a second current density is input to the spin-orbit coupling layer along the first direction, the resistance state of the first magnetic tunnel junction is a first resistance state, and the resistance state of the second magnetic tunnel junction is a second resistance state;
when a current with a third current density is input to the spin orbit coupling layer along the second direction, the resistance state of the first magnetic tunnel junction is a second resistance state, and the resistance state of the second magnetic tunnel junction is a second resistance state;
when a current with a fourth current density is input to the spin-orbit coupling layer along the second direction, the resistance state of the first magnetic tunnel junction is a second resistance state, and the resistance state of the second magnetic tunnel junction is a first resistance state.
2. The magnetic memory cell of claim 1, wherein the dimensions of the plurality of magnetic tunnel junctions increase sequentially or decrease sequentially along the direction of arrangement of the plurality of magnetic tunnel junctions.
3. The magnetic memory cell of claim 1, wherein the first and second magnetic tunnel junctions have in-plane anisotropy.
4. The magnetic storage cell of claim 3, wherein the shape of the first magnetic tunnel junction and/or the second magnetic tunnel junction is one of elliptical, triangular, rectangular, and semi-circular.
5. The magnetic memory cell of claim 1, wherein at least one of the first magnetic tunnel junction and the second magnetic tunnel junction has perpendicular anisotropy;
the magnetic storage cell further includes an externally applied magnetic field disposed corresponding to the magnetic tunnel junction having perpendicular anisotropy or the magnetic tunnel junction having perpendicular anisotropy has an equivalent externally applied magnetic field.
6. The magnetic memory cell of claim 5 wherein the magnetic tunnel junction having perpendicular anisotropy is circular or square in shape.
7. The magnetic memory cell of claim 5, wherein the memory cell comprises a magnetic field generating device that provides the externally applied magnetic field or equivalently the externally applied magnetic field; or,
the first magnetic tunnel junction and/or the second magnetic tunnel junction comprise a fixed layer, a barrier layer and a free layer which are sequentially arranged from top to bottom, and the section of at least one of the fixed layer, the barrier layer and the free layer is trapezoidal and is used for providing the external magnetic field; or,
the spin orbit coupling layer is made of an antiferromagnetic material, and forms an exchange bias field with the free layer and is used for providing the external magnetic field; or,
the magnetic tunnel junction comprises a magnetic material layer for providing the externally applied magnetic field; or,
the magnetic tunnel junction has a shape capable of forming a shape anisotropy field for providing an equivalent magnetic field of the externally applied magnetic field; or,
the free layer has a perpendicular anisotropy of gradient for providing an equivalent magnetic field to the externally applied magnetic field.
8. A method of writing data to a magnetic memory cell according to any of claims 1 to 7, comprising:
determining the input direction and the current density of current according to the combination of data to be written, wherein the input direction is one of two opposite directions of the arrangement directions of the plurality of magnetic tunnel junctions;
and inputting current to the spin orbit coupling layer according to the input direction so that the combination of the resistance states of the plurality of magnetic tunnel junctions corresponds to the combination of the data to be written.
9. A magnetic random access memory comprising a plurality of magnetic storage cells according to any of claims 1-7 arranged in an array.
10. A computer device comprising a memory, a processor, and a computer program stored on the memory and executable on the processor,
the processor and/or the memory comprise a magnetic storage unit as claimed in any one of claims 1-7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110183713.6A CN113450849B (en) | 2021-02-10 | 2021-02-10 | Magnetic storage unit, data writing method, memory and equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110183713.6A CN113450849B (en) | 2021-02-10 | 2021-02-10 | Magnetic storage unit, data writing method, memory and equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113450849A CN113450849A (en) | 2021-09-28 |
| CN113450849B true CN113450849B (en) | 2022-12-16 |
Family
ID=77808793
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110183713.6A Active CN113450849B (en) | 2021-02-10 | 2021-02-10 | Magnetic storage unit, data writing method, memory and equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113450849B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109637569A (en) * | 2018-11-23 | 2019-04-16 | 北京航空航天大学 | A kind of magnetic memory cell and its method for writing data |
| CN110660420A (en) * | 2018-06-28 | 2020-01-07 | 中电海康集团有限公司 | MRAM memory cell |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8687412B2 (en) * | 2012-04-03 | 2014-04-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Reference cell configuration for sensing resistance states of MRAM bit cells |
| CN107481749A (en) * | 2016-06-13 | 2017-12-15 | 中电海康集团有限公司 | A kind of polymorphic magnetic RAM bit and logic gates auxiliary wiring method of logic gates auxiliary write-in |
| CN109904309B (en) * | 2019-03-19 | 2023-04-18 | 中国科学院微电子研究所 | Multi-state magnetic memory and manufacturing method thereof |
| CN111653664A (en) * | 2020-04-28 | 2020-09-11 | 北京航空航天大学合肥创新研究院 | Magnetic memory cell and data writing method |
| CN111596891B (en) * | 2020-05-09 | 2023-07-28 | 北京航空航天大学 | True random number generating device and generating method |
| CN111863061A (en) * | 2020-07-21 | 2020-10-30 | 上海磁宇信息科技有限公司 | Magnetic random access memory and data read/write operation method thereof |
-
2021
- 2021-02-10 CN CN202110183713.6A patent/CN113450849B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110660420A (en) * | 2018-06-28 | 2020-01-07 | 中电海康集团有限公司 | MRAM memory cell |
| CN109637569A (en) * | 2018-11-23 | 2019-04-16 | 北京航空航天大学 | A kind of magnetic memory cell and its method for writing data |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113450849A (en) | 2021-09-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7307876B2 (en) | High speed low power annular magnetic devices based on current induced spin-momentum transfer | |
| US10020039B2 (en) | Three terminal magnetoresistive devices, magnetoresistive random access memory and magnetic recording method | |
| CN109712655B (en) | MRAM with voltage-dependent in-plane magnetic anisotropy | |
| CN105280214A (en) | Current-driven magnetic random access memory and spin logic device | |
| US10296824B2 (en) | Fabrication methods of memory subsystem used in CNN based digital IC for AI | |
| CN107636850B (en) | Low stray field magnetic memory | |
| JP2005535111A (en) | Multilevel MRAM with improved memory density | |
| CN113451356B (en) | Magnetic random access memory cell, memory and apparatus | |
| EP3314676A1 (en) | Perpendicular magnetic memory with symmetric fixed layers | |
| EP1580758A2 (en) | Soft-reference three conductor magnetic memory storage device | |
| CN113450850B (en) | Magnetic storage unit, data writing method, memory and equipment | |
| JP5445970B2 (en) | Magnetoresistive element and magnetic random access memory | |
| CN110797371B (en) | Magnetic memory, data storage device and control method | |
| CN113450851B (en) | Multi-bit memory cell, analog-to-digital converter, apparatus and method | |
| CN113451505B (en) | Magnetic random access memory cell, memory and device | |
| CN113450849B (en) | Magnetic storage unit, data writing method, memory and equipment | |
| CN113380287B (en) | Magnetic memory cell structure and data writing method thereof | |
| CN113451503B (en) | Multifunctional magnetic random access memory unit, memory and equipment | |
| CN113782078B (en) | Data processing method and device based on magnetic tunnel junction | |
| Kishi et al. | Examination of Magnetization Switching Behavior by Bi-Directional Read of Spin-Orbit-Torque MRAM | |
| CN116096211A (en) | Magnetic memory cell and computer device | |
| KR20240143574A (en) | Magnetic tunneling junction device capable of field-free switching and memory device including the same | |
| US9159394B2 (en) | Ring-shaped magnetoresistive memory device and writing method thereof | |
| CN116096212A (en) | Method for manufacturing multi-bit magnetic memory cell and memory cell | |
| Lanuzza | Diego Fernando Criollo Caisaguano |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |