CN113450849A - Magnetic storage unit, data writing method, memory and equipment - Google Patents
Magnetic storage unit, data writing method, memory and equipment Download PDFInfo
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Abstract
The invention provides a magnetic storage unit, a data writing method, a memory and equipment, wherein the magnetic storage unit comprises a spin orbit coupling layer and a plurality of magnetic tunnel junctions arranged on the spin orbit coupling layer, the sizes of the magnetic tunnel junctions are different, and the distance length between two adjacent magnetic tunnel junctions is in a nanometer level; when currents with different current densities are respectively input to the spin orbit coupling layer along two opposite directions of the arrangement directions of the plurality of magnetic tunnel junctions, the combinations of the resistance states of the plurality of magnetic tunnel junctions are different, and the data writing of the plurality of magnetic tunnel junctions of a single layer can be realized through one-time current input.
Description
Technical Field
The present invention relates to the field of semiconductor technologies, and in particular, to a magnetic memory cell, a data writing method, a memory, and an apparatus.
Background
With the continuous reduction of the semiconductor process size, moore's law is slowed down, and the increase of leakage current and interconnection delay become the bottleneck of the conventional CMOS memory. The search for new generation solutions for memory technologies has become a focus of integrated circuit research, in which magnetic random access memories are of great interest. Compared with the traditional device, the Magnetic Random Access Memory (MRAM) has the advantages of unlimited erasing and writing times, nonvolatility, high reading and writing speed, radiation resistance and the like, is expected to become a universal memory, and is an ideal device for constructing a next-generation nonvolatile main memory and cache. A Magnetic Tunnel Junction (MTJ) is a basic memory cell of a Magnetic random access memory. The size of the magnetic tunnel junction can be reduced to below 40nm, and high-density integration is expected to be realized.
In this context, researchers have proposed Multi-level cells (MLCs) composed of more than one MTJ to further increase the storage density of mass storage applications, the MLC requiring strict adjustment of the characteristics of each MTJ to achieve different threshold switch currents and resistance states with sufficient margins. A typical MLC is implemented by connecting two planar MTJs in series, the MTJs in series have different areas, the manufacturing process usually involves multiple etching steps, the process is complicated, and it is difficult to implement one-step writing of data.
Disclosure of Invention
An object of the present invention is to provide a magnetic memory cell that realizes data writing of a plurality of magnetic tunnel junctions of a single layer by one current input. Another object of the present invention is to provide a method for writing data into a magnetic memory cell. It is a further object of the present invention to provide a magnetic random access memory. It is a further object of the present invention to provide a computer apparatus.
In order to achieve the above object, in one aspect, the present invention discloses a magnetic storage cell, including a spin-orbit coupling layer and a plurality of magnetic tunnel junctions disposed on the spin-orbit coupling layer, where the plurality of magnetic tunnel junctions have different sizes and a distance between two adjacent magnetic tunnel junctions is in the order of nanometers;
when currents with different current densities are respectively input to the spin orbit coupling layer along two opposite directions of the arrangement directions of the plurality of magnetic tunnel junctions, combinations of resistance states of the plurality of magnetic tunnel junctions are different.
Preferably, the plurality of magnetic tunnel junctions include a first magnetic tunnel junction and a second magnetic tunnel junction, and the arrangement directions of the first magnetic tunnel junction and the second magnetic tunnel junction include two opposite current input directions, namely a first direction and a second direction;
when a current with a first current density is input to the spin-orbit coupling layer along the first direction, the resistance state of the first magnetic tunnel junction is a first resistance state, and the resistance state of the second magnetic tunnel junction is a first resistance state;
when a current with a second current density is input to the spin-orbit coupling layer along the first direction, the resistance state of the first magnetic tunnel junction is a first resistance state, and the resistance state of the second magnetic tunnel junction is a second resistance state;
when a current with a third current density is input to the spin-orbit coupling layer along the second direction, the resistance state of the first magnetic tunnel junction is a second resistance state, and the resistance state of the second magnetic tunnel junction is a second resistance state;
when a current of a fourth current density is input to the spin-orbit coupling layer along the second direction, the resistance state of the first magnetic tunnel junction is a second resistance state, and the resistance state of the second magnetic tunnel junction is a first resistance state.
Preferably, the sizes of the plurality of magnetic tunnel junctions are sequentially increased or sequentially decreased along the arrangement direction of the plurality of magnetic tunnel junctions.
Preferably, the first magnetic tunnel junction and the second magnetic tunnel junction have in-plane anisotropy.
Preferably, the shape of the first magnetic tunnel junction and/or the second magnetic tunnel junction is one of an ellipse, a triangle, a rectangle, and a semicircle.
Preferably, at least one of the first magnetic tunnel junction and the second magnetic tunnel junction has perpendicular anisotropy;
the magnetic storage cell further includes an externally applied magnetic field disposed corresponding to the magnetic tunnel junction having perpendicular anisotropy or the magnetic tunnel junction having perpendicular anisotropy has an equivalent externally applied magnetic field.
Preferably, the shape of the magnetic tunnel junction having perpendicular anisotropy is circular or square.
Preferably, the memory cell comprises a magnetic field generating device for providing the externally applied magnetic field or equivalently the externally applied magnetic field; alternatively, the first and second electrodes may be,
the first magnetic tunnel junction and/or the second magnetic tunnel junction comprise a fixed layer, a barrier layer and a free layer which are sequentially arranged from top to bottom, and the section of at least one of the fixed layer, the barrier layer and the free layer is trapezoidal and is used for providing the external magnetic field; alternatively, the first and second electrodes may be,
the spin orbit coupling layer is made of an antiferromagnetic material, and forms an exchange bias field with the free layer and is used for providing the external magnetic field; alternatively, the first and second electrodes may be,
the magnetic tunnel junction comprises a magnetic material layer for providing the externally applied magnetic field; alternatively, the first and second electrodes may be,
the magnetic tunnel junction has a shape capable of forming a shape anisotropy field for providing an equivalent magnetic field of the externally applied magnetic field; alternatively, the first and second electrodes may be,
the free layer has a perpendicular anisotropy of gradient for providing an equivalent magnetic field to the externally applied magnetic field.
The invention also discloses a data writing method of the magnetic storage unit, which comprises the following steps:
determining the input direction and the current density of current according to the combination of data to be written, wherein the input direction is one of two opposite directions of the arrangement directions of the plurality of magnetic tunnel junctions;
and inputting current to the spin orbit coupling layer according to the input direction so that the combination of the resistance states of the plurality of magnetic tunnel junctions corresponds to the combination of the data to be written.
The invention also discloses a magnetic random access memory which comprises a plurality of magnetic storage units arranged in an array.
The invention also discloses a computer device comprising a memory, a processor and a computer program stored on the memory and executable on the processor,
the processor and/or the memory include magnetic storage units as described above.
The invention keeps the distance between two adjacent Magnetic tunnel junctions in the plurality of Magnetic tunnel junctions at a nanometer level by setting the distance between the plurality of Magnetic tunnel junctions on the spin orbit coupling layer, and the plurality of Magnetic tunnel junctions arranged at the nanometer level distance can be regarded as a plurality of arranged small magnets/nanometer junctions, so that the Magnetic storage unit can be equivalent to a Magnetic Quantum Cellular Automata (MQCA). Magnetic dipole interactions (magnetic dipole interactions) between magnets are formed among the magnetic tunnel junctions arranged on the magnetic storage unit, and the magnetic dynamic behaviors of the free layers of the adjacent magnetic tunnel junctions can be influenced by utilizing the ferromagnetism of the small magnets/nano junctions, so that data transmission or calculation is realized. When currents with different current densities are respectively input to the spin orbit coupling layer along two opposite directions of the arrangement direction of the magnetic tunnel junctions, the combination of the resistance states of the first magnetic tunnel junction and the second magnetic tunnel junction is different, and the random data combination writing of a two-bit (bit) storage unit formed by the first magnetic tunnel junction and the second magnetic tunnel junction is realized.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 illustrates a schematic diagram of one embodiment of a magnetic memory cell of the present invention;
FIG. 2 illustrates a top view of one embodiment of a magnetic memory cell of the present invention;
FIG. 3 illustrates a schematic diagram of one embodiment of a magnetic memory cell of the present invention including three magnetic tunnel junctions;
FIG. 4 is a flow chart illustrating one embodiment of a method for writing data to a magnetic memory cell in accordance with the present invention;
FIG. 5 illustrates a schematic diagram of a computer device suitable for use in implementing embodiments of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
According to one aspect of the present invention, the present embodiment discloses a magnetic memory cell. As shown in fig. 1 and 2, in the present embodiment, the magnetic storage unit includes a spin-orbit coupling layer a1 and a plurality of magnetic tunnel junctions disposed on the spin-orbit coupling layer a1, where the plurality of magnetic tunnel junctions have different sizes and a pitch length between two adjacent magnetic tunnel junctions is on the order of nanometers.
When currents of different current densities are input to the spin orbit coupling layer a1 in two opposite directions of the arrangement direction of the plurality of magnetic tunnel junctions, the combinations of the resistance states of the plurality of magnetic tunnel junctions are different.
According to the invention, the distance between two adjacent Magnetic tunnel junctions in the plurality of Magnetic tunnel junctions is kept at a nanometer level by setting the distance between the plurality of Magnetic tunnel junctions on the spin orbit coupling layer A1, and the plurality of Magnetic tunnel junctions arranged at the nanometer level distance can be regarded as a plurality of arranged small magnets/nanometer junctions, so that the Magnetic storage unit can be equivalent to a Magnetic Quantum Cellular Automata (MQCA). Magnetic dipole interactions (magnetic dipole interactions) between magnets are formed among the magnetic tunnel junctions arranged on the magnetic storage unit, and the magnetic dynamic behaviors of the adjacent magnetic tunnel junction free layers B1 can be influenced by the ferromagnetism of the small magnets/nano junctions, so that data transmission or calculation is realized. When currents with different current densities are respectively input to the spin orbit coupling layer A1 along two opposite directions of the arrangement directions of the magnetic tunnel junctions, the combinations of resistance states of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 are different, and the random data combination writing of a two-bit (bit) storage unit formed by the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 is realized.
It should be noted that, the magnetic dipole interactions (magnetic dipole interactions) refer to that when the distances between the small magnets/magnetic tunnel junctions are very close, the ferromagnetism of the small magnets/nano-junctions causes the magnetomotive behaviors to affect each other. Magnetic Quantum dot Cellular Automata (MQCA) refers to a structure that uses iron dipole interaction between magnets to achieve data transfer or calculation using a specific arrangement of small magnets/nano-junctions.
In a preferred embodiment, as shown in fig. 1, the plurality of magnetic tunnel junctions includes a first magnetic tunnel junction MTJ1 and a second magnetic tunnel junction MTJ2, and the arrangement directions of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 include two opposite current input directions, a first direction and a second direction.
Specifically, when a current J1 of a first current density is input to the spin-orbit coupling layer a1 in the first direction, the resistance state of the first magnetic tunnel junction MTJ1 is a first resistance state, and the resistance state of the second magnetic tunnel junction MTJ2 is a first resistance state; when a current J2 of a second current density is input to the spin-orbit coupling layer a1 in the first direction, the resistance state of the first magnetic tunnel junction MTJ1 is a first resistance state, and the resistance state of the second magnetic tunnel junction MTJ2 is a second resistance state; when a current J3 of a third current density is input to the spin-orbit coupling layer a1 in the second direction, the resistance state of the first magnetic tunnel junction MTJ1 is a second resistance state, and the resistance state of the second magnetic tunnel junction MTJ2 is a second resistance state; when a current J4 of a fourth current density is input to the spin-orbit coupling layer a1 in the second direction, the resistance state of the first magnetic tunnel junction MTJ1 is the second resistance state, and the resistance state of the second magnetic tunnel junction MTJ2 is the first resistance state.
In a specific example, as shown in fig. 1, the spin-orbit coupling layer a1 includes a length direction along the x-axis of a rectangular coordinate system and a width direction along the y-axis of the rectangular coordinate system, and two magnetic tunnel junctions are arranged along the length direction of the spin-orbit coupling layer a 1. Wherein the length direction comprises a first direction and a second direction which are opposite. The spin-orbit coupling layer a1 has a first electrode S3 and a second electrode S4 at both ends in the length direction, respectively, for inputting currents + Ix and-Ix to the spin-orbit coupling layer a1 in the first direction and the second direction, respectively. Wherein, Hex is the direction of the external magnetic field or the equivalent external magnetic field. The distance length d between the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 is a nanometer level, that is, d is a small distance of several nanometers, and the distance between the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 is very close, so that the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 have an iron dipole interaction, that is, the writing of a specific data combination of a plurality of single-layer magnetic tunnel junctions can be realized by one-time current input, and the process complexity of the memory cell is reduced.
It is understood that, in a preferred embodiment, at least one of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 may include a fixed layer B3, a barrier layer B2, and a free layer B1, which are sequentially disposed from top to bottom. The bottom surface of the free layer B1 is fixedly connected to the spin-orbit coupling layer A1. The resistance of the magnetic tunnel junction depends on the magnetization directions of the pinned layer B3 and the free layer B1, while the magnetization directions of the free layer B1 and the pinned layer B3 are determined by the magnetic moment direction. When the magnetic moment directions of the pinned layer B3 and the free layer B1 are the same, the magnetic tunnel junction is in a low resistance state (low resistance state), and when the magnetic moment directions of the pinned layer B3 and the free layer B1 are opposite, the magnetic tunnel junction is in a high resistance state (high resistance state). The high resistance state and the low resistance state of the magnetic tunnel junction may be respectively associated with different data in advance, for example, it is preset that the high resistance state corresponds to data "+ 1" and the low resistance state corresponds to data "-1", a current or a voltage is input to the magnetic tunnel junction through the reading circuit, the resistance state of the magnetic tunnel junction may be determined to be the high resistance state or the low resistance state according to a change in the current or the voltage, and the data stored in the magnetic tunnel junction may be determined to be "+ 1" or "-1" according to the resistance state of the magnetic tunnel junction. The ranges of the high resistance state and the low resistance state are determined by common technical means in the art, and those skilled in the art can determine the resistance ranges of the high resistance state and the low resistance state of the magnetic tunnel junction according to common knowledge, which is not described herein again.
Thus, by setting the magnetic moment direction of the pinned layer B3 and the corresponding relationship between the high resistance state and the low resistance state of the magnetic tunnel junction and the logic numbers "-1" and "+ 1", when the current J2 having the first current density and the second current density is inputted to the spin-orbit coupling layer a1 in the first direction and the current J4 having the third current density and the fourth current density is inputted to the spin-orbit coupling layer a1 in the second direction, respectively, the combinations of the resistance states of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 are different, that is, the data combinations storing four kinds of 2 bits of the logic number combinations "-1, -1", "-1, + 1", "+ 1, + 1", and "+ 1, -1" are obtained, respectively, and as shown in table 1, the writing of an arbitrary data combination in which the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 form a two-bit (bit) memory cell is realized, data writing of a plurality of single-layer magnetic tunnel junctions is realized through one-time current input, and the process complexity of the storage unit is reduced. In practical applications, by adjusting the magnetic moment direction of the pinned layer B3 and the corresponding relationship between the resistance state of the magnetic tunnel junction and the logic number, when the currents J4 with the first to fourth current densities are respectively input along the first direction and the second direction, the writing storage of the corresponding data combination is realized.
TABLE 1
It can be understood that, the magnetic moment directions of the free layer B1 of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 are deflected toward the first easy magnetic axis and the second easy magnetic axis respectively under the action of the input current of the spin-orbit coupling layer a1, wherein the first easy magnetic axis includes a first magnetic moment direction and a second magnetic moment direction which are opposite, the second easy magnetic axis includes a third magnetic moment direction and a fourth magnetic moment direction which are opposite, and the deflection directions of the magnetic moment directions of the free layer B1 of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 are different according to the current direction and the current density of the input current. In a specific example, when the current J2 with the first current density and the second current density is input to the spin orbit coupling layer a1 along the first direction and the current J4 with the third current density and the fourth current density is input to the spin orbit coupling layer a1 along the second direction, the magnetic moment directions of the free layer B1 of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 are the "first magnetic moment direction and the third magnetic moment direction", "the first magnetic moment direction and the fourth magnetic moment direction", "the second magnetic moment direction and the fourth magnetic moment direction", and "the second magnetic moment direction and the third magnetic moment direction", respectively, and then the magnetic moment directions of the fixed layer B3 of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 can be preset to realize the write storage of different data combinations. For example, assume that the pinned layer B3 magnetic moment directions of the first and second magnetic tunnel junctions MTJ1 and MTJ2 are the first and third magnetic moment directions, respectively. After a current J1 with a first current density is input to the spin-orbit coupling layer a1 along a first direction, the magnetic moment directions of the first magnetic tunnel junction MTJ1 fixed layer B3 and the free layer B1 are the same, the first magnetic tunnel junction MTJ1 is in a low-resistance state, the magnetic moment directions of the second magnetic tunnel junction MTJ2 fixed layer B3 and the free layer B1 are the same, and the second magnetic tunnel junction MTJ2 is in a low-resistance state; after a current J2 with a second current density is input into the spin-orbit coupling layer A1 along the first direction, the magnetic moment directions of the first magnetic tunnel junction MTJ1 fixed layer B3 and the free layer B1 are the same, the first magnetic tunnel junction MTJ1 is in a low-resistance state, the magnetic moment directions of the second magnetic tunnel junction MTJ2 fixed layer B3 and the free layer B1 are opposite, and the second magnetic tunnel junction MTJ2 is in a high-resistance state; after a current J3 with a third current density is input to the spin-orbit coupling layer a1 along the second direction, the magnetic moment directions of the first magnetic tunnel junction MTJ1 fixed layer B3 and the free layer B1 are opposite, the first magnetic tunnel junction MTJ1 is in a high-resistance state, the magnetic moment directions of the second magnetic tunnel junction MTJ2 fixed layer B3 and the free layer B1 are opposite, and the second magnetic tunnel junction MTJ2 is in a high-resistance state; after a current J4 with a fourth current density is input to the spin-orbit coupling layer a1 along the second direction, the magnetic moment directions of the first magnetic tunnel junction MTJ1 fixed layer B3 and the free layer B1 are opposite, the first magnetic tunnel junction MTJ1 is in a high resistance state, the magnetic moment directions of the second magnetic tunnel junction MTJ2 fixed layer B3 and the free layer B1 are the same, and the second magnetic tunnel junction MTJ2 is in a low resistance state. Further, if it is preset that the low resistance state of the magnetic tunnel junction corresponds to a logic number "-1" and the high resistance state corresponds to a logic number "+ 1", then, after a current J2 with a first current density and a second current density is respectively input to the spin-orbit coupling layer a1 along the first direction and a current J4 with a third current density and a fourth current density is respectively input to the spin-orbit coupling layer a1 along the second direction, storage of four data combinations "-1, -1", "-1, + 1", "+ 1, + 1", and "+ 1, -1" can be realized respectively.
Note that in this preferred embodiment, the magnetic memory cell includes two magnetic tunnel junctions. In other embodiments, the magnetic storage unit may further include other numbers of magnetic tunnel junctions, for example, the magnetic storage unit shown in fig. 3 includes 3 magnetic tunnel junctions arranged in sequence, and the number of the magnetic tunnel junctions is not limited by the present invention.
In a preferred embodiment, the sizes of the plurality of magnetic tunnel junctions are sequentially increased or sequentially decreased along the arrangement direction of the plurality of magnetic tunnel junctions. It is to be understood that the pitch lengths d of each adjacent two of the plurality of magnetic tunnel junctions may be the same or different. E.g. a magnetic memory cell as shown in FIG. 3, d1And d2May be the same or different, and only need to be maintained at the nanometer level, which is not limited by the present invention. The sizes of the magnetic tunnel junctions are sequentially increased or decreased progressively along the arrangement direction of the magnetic tunnel junctions, so that the iron dipole interaction of the sequentially arranged magnetic tunnel junctions is sequentially increased or decreased progressively, and the design of data transmission or calculation which can be realized by the magnetic storage unit is facilitated.
In a preferred embodiment, the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 have in-plane anisotropy. It is understood that, for a magnetic tunnel junction having in-plane anisotropy, the magnetic moment direction of the free layer B1 of the magnetic tunnel junction can be deflected toward the easy magnetic axis by an SOT (Spin-orbit torque) current.
Preferably, the shape of the first magnetic tunnel junction MTJ1 and/or the second magnetic tunnel junction MTJ2 may be one of an ellipse, a triangle, a rectangle, and a semicircle, as shown in fig. 3. It is understood that the shapes of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 are preferably selected to be elliptical, and the major axis of the elliptical is the easy magnetic axis. When a current is input to the spin orbit coupling layer a1, the final direction of the magnetic moment direction of the free layer B1 after the end of the current input is the easy magnetic axis direction based on the SOT principle. In other embodiments, rectangles, triangles, and semicircles may also achieve the same effect. In practical applications, a person skilled in the art may flexibly set the shapes of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 according to requirements, which is not limited by the present invention, and a technical solution of a magnetic memory cell using magnetic tunnel junctions with other feasible shapes based on the same inventive concept should also be within the protection scope of the present invention.
In other embodiments, at least one of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 has perpendicular anisotropy. It is understood that one or both of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 may also employ a magnetic tunnel junction having perpendicular anisotropy. For the magnetic tunnel junction with the perpendicular anisotropy, the magnetic storage unit further comprises an external magnetic field arranged corresponding to the magnetic tunnel junction with the perpendicular anisotropy or the magnetic tunnel junction with the perpendicular anisotropy has an equivalent external magnetic field. For example, in a specific example, the first magnetic tunnel junction MTJ1 is circular in shape and the second magnetic tunnel junction MTJ2 is elliptical in shape. Wherein the first magnetic tunnel junction MTJ1 has perpendicular anisotropy and the second magnetic tunnel junction MTJ2 has in-plane anisotropy. Therefore, the random access memory cell of this specific example needs to set an external magnetic field or an equivalent external magnetic field corresponding to the first magnetic tunnel junction MTJ1, so that the first magnetic tunnel junction MTJ1 can generate a corresponding change in magnetic moment direction after the spin-orbit coupling layer a1 inputs a current.
For the magnetic tunnel junction with the shape of an ellipse, a triangle, a rectangle or a semicircle, the shape of the magnetic tunnel junction is not completely symmetrical, and the shape anisotropy of the magnetic tunnel junction can replace the action of an external magnetic field. For the round or square magnetic tunnel junction, it is necessary to provide an external magnetic field or to subject the round or square free layer B1 of the magnetic tunnel junction to the effect of an equivalent external magnetic field by means of a structure of the magnetic tunnel junction, for example, the round or square magnetic tunnel junction includes a fixed layer B3, a barrier layer B2 and a free layer B1 sequentially arranged from top to bottom, the cross section of the free layer B1 or the barrier layer B2 can be made into a trapezoid, and the trapezoid cross section is provided to form the equivalent external magnetic field.
In alternative embodiments, the externally applied magnetic field or an equivalent externally applied magnetic field in the magnetic memory cell can be implemented in a variety of ways. Specifically, the externally applied magnetic field or the equivalent externally applied magnetic field may be formed by at least one of the following ways:
the storage unit comprises a magnetic field generating device for providing the external magnetic field or equivalently providing the external magnetic field;
the magnetic tunnel junction comprises a fixed layer B3, a barrier layer B2 and a free layer B1 which are sequentially arranged from top to bottom, wherein the section of at least one of the fixed layer B3, the barrier layer B2 and the free layer B1 is trapezoidal, and the fixed layer B3, the barrier layer B2 and the free layer B1 are used for providing the equivalent external magnetic field;
the material of the spin-orbit coupling layer A1 is an antiferromagnetic material, the spin-orbit coupling layer A1 forms an exchange bias field with the free layer B1 for providing the equivalent externally applied magnetic field;
the magnetic tunnel junction comprises a layer of magnetic material (e.g., a Co layer) for providing the equivalent externally applied magnetic field;
the magnetic tunnel junction has a shape capable of forming a shape anisotropy field (inhomogeneous demagnetization field) for providing the equivalent external magnetic field. In some embodiments, the magnetic tunnel junction may have a rectangular shape, an elliptical shape, an isosceles right-angle shape, etc., and taking the elliptical shape as an example, the demagnetization field in the major axis direction is weak and in the minor axis direction, and the demagnetization field may be equivalent to an external magnetic field;
the free layer B1 has a perpendicular anisotropy of gradient to provide a magnetic field equivalent to the externally applied magnetic field. Specifically, when the magnetic tunnel junction is manufactured, the concentration of the target material can be adjusted, so that the free layer B1 has the vertical anisotropy of the gradient, the symmetry of the magnetic moment distribution is further broken, and the magnetic tunnel junction can be used for providing an equivalent external magnetic field.
It should be noted that the magnetic field generating device or the equivalent device capable of forming the external magnetic field is a conventional technical means in the art, and those skilled in the art can flexibly set the device according to the needs, and details are not described herein. In addition, an applied magnetic field may be provided by forming at least one of the pinned layer B3, the barrier layer B2, and the free layer B1 to have a trapezoidal cross section, forming an exchange bias field with the free layer B1 using an antiferromagnetic material, providing a magnetic material layer, or the like. In practical applications, the applied magnetic field may be formed by other feasible manners, which is not limited by the present invention.
In a preferred embodiment, in order to adjust the perpendicular anisotropy of the magnetic tunnel junction and the smoothness of each layer, the magnetic tunnel junction may further include at least one of the layer structures of an insertion layer, a pinning layer, a seed layer, and a capping layer. One or more layers of structures can be arranged according to actual requirements, and a person skilled in the art can arrange the magnetic tunnel junction structures in a top-down arrangement order according to the requirements, which is not limited in the present invention.
In a preferred embodiment, the magnetic storage unit further comprises a control module, configured to determine an input direction of a current and a current density according to a combination of data to be written, where the input direction is one of two opposite directions of the arrangement directions of the plurality of magnetic tunnel junctions. Inputting a current to the spin orbit coupling layer A1 according to the input direction to make the combination of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 resistance state correspond to the combination of data to be written. It is understood that the input direction and the current density of the current may be determined according to the predetermined current input direction, the current density, and the combination of the data to be written corresponding to the different data combinations stored in the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2, and the current corresponding to the current density may be input to the spin orbit coupling layer a1 according to the input direction to make the combinations of the resistance states of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 different, thereby achieving the deterministic writing of the data combination to be written.
In a preferred embodiment, the magnetic storage unit further comprises a read block, which applies a sensing current to the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2, and determines the logic number stored in the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 according to a variation of the sensing current. Specifically, as shown in fig. 1, the reading module may input the detection current to the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 through the interface S1 and the interface S2, respectively, where the resistance state of the magnetic tunnel junction is a high resistance state or a low resistance state, and the current change speeds of the detection current flowing through the high resistance state and the low resistance state are different, so that it can be determined whether the magnetic tunnel junction of the input detection current is in the high resistance state or the low resistance state according to the change speed of the detection current, and data reading is achieved. It should be noted that the interface S1 and the interface S2 may be different interfaces, and input independent detection currents to the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 respectively to read data; the interface S1 and the interface S2 may also be the same interface, and simultaneously input the detection currents to the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 to respectively read data, or sequentially input the detection currents to the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 to respectively read data, and a person skilled in the art may set the interface S1 and the interface S2 according to actual requirements, and a person skilled in the art may also set specific circuit structures of the control module and the read module according to actual requirements, which is a conventional technical means in the art, and details are not described herein.
Preferably, the spin orbit coupling layer a1 may be formed in a rectangular shape such that the top surface area of the spin orbit coupling layer a1 is larger than the area occupied by the plurality of magnetic tunnel junctions provided on the spin orbit coupling layer a1, even though the plurality of magnetic tunnel junctions may be provided on the spin orbit coupling layer a1 with the outer edges of the plurality of magnetic tunnel junctions located inside the outer edges of the spin orbit coupling layer a 1. Among them, the spin orbit coupling layer a1 can be preferably selected from a heavy metal strip film or an antiferromagnetic strip film.
It should be noted that two or more magnetic tunnel junctions on the spin-orbit coupling layer a1 may be provided, and preferably, a plurality of magnetic tunnel junctions may be provided on the same spin-orbit coupling layer a1, so that one-time data write operation to the plurality of magnetic tunnel junctions can be realized, the number of control transistors for inputting spin-orbit torque current can be reduced, and the integration level and the power consumption of the circuit can be further improved.
In a preferred embodiment, a top electrode may be provided on top of the magnetic tunnel junction, and a current input electrode and an output electrode may be provided on opposite sides of the spin orbit coupling layer a1, respectively, for input of the detection current and the spin orbit torque current. Among them, the material of the electrode is preferably tantalum Ta, aluminum Al, gold Au, or copper Cu.
Preferably, the material of the free layer B1 and the fixed layer B3 may be ferromagnetic metal, and the material of the barrier layer B2 may be oxide. The ferromagnetic metal can be a mixed metal material formed by at least one of cobalt iron CoFe, cobalt iron boron CoFeB or nickel iron NiFe, and the proportion of the mixed metal materials can be the same or different. The oxide can be one of magnesium oxide, MgO, or aluminum oxide, Al2O3, and the like, and is used for generating a tunneling magnetoresistance effect. In practical applications, the ferromagnetic metal and the oxide may be made of other feasible materials, and the invention is not limited to this.
The free layer B1 of the magnetic tunnel junction is fixedly contacted with the spin orbit coupling layer A1, each layer of the magnetic tunnel junction and the spin orbit coupling layer A1 can be sequentially plated on the substrate from bottom to top by the traditional methods of ion beam epitaxy, atomic layer deposition or magnetron sputtering and the like, and then two or more magnetic tunnel junctions are prepared and formed by the traditional nanometer device processing technologies of photoetching, etching and the like.
In a preferred embodiment, the spin-orbit coupling layer a1 is a spin-orbit coupling layer a1 made of a heavy metal film, an antiferromagnetic film, or other material. The heavy metal film or the antiferromagnetic film can be made into a rectangle, the top area of the heavy metal film or the antiferromagnetic film is preferably larger than the bottom area of the outline formed by all the magnetic tunnel junctions so as to be capable of arranging two or more magnetic tunnel junctions, and the bottom shapes of the magnetic tunnel junctions are completely embedded into the top shapes of the heavy metal film or the antiferromagnetic film. Preferably, the material of the spin-orbit coupling layer a1 may be one of platinum Pt, tantalum Ta, or tungsten W. In practical applications, the spin-orbit coupling layer a1 may be formed by other feasible materials, which is not limited by the invention.
In this embodiment, the first magnetic tunnel junction MTJ1 and/or the second magnetic tunnel junction MTJ2 includes a fixed layer B3 on top, a free layer B1 in contact with the spin-orbit coupling layer a1, and a barrier layer B2 disposed between the fixed layer B3 and the free layer B1, and the magnetic tunnel junction is a three-layer structure including only one free layer B1. In other embodiments, the free layer B1 may be provided in plurality, i.e., two or more free layers B1. The magnetic tunnel junction includes a top fixed layer B3, a plurality of free layers B1, and a barrier layer B2 disposed between each adjacent two layers, the lowermost free layer B1 being disposed in contact with the spin-orbit coupling layer a 1. For example, in a specific example, when two free layers B1 are included, the magnetic memory cell structure may include a spin-orbit coupling layer a1, a second free layer B1, a barrier layer B2, a first free layer B1, a barrier layer B2, and a fixed layer B3, which are sequentially disposed on the spin-orbit coupling layer a 1.
In summary, the magnetic memory cell of the present invention can achieve the writing of the specific 2-bit data combination by one-time current writing, without considering the initial resistance state in the magnetic tunnel junction, and the final resistance states of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 are determined only by the direction of the input current. The invention adopts spin orbit torque current to write data, and has high writing speed and low power consumption. The magnetic tunnel junction can adopt a completely symmetrical regular shape, is beneficial to the continuous miniaturization of the size of the magnetic random memory device, and improves the storage density. In addition, the spin orbit coupling layer A1 can be rectangular and regular, the spin orbit coupling layer A1 does not need to be processed, the spin orbit coupling layer can be manufactured without complex process, and the process requirements are reduced.
Based on the same principle, the embodiment also discloses a data writing method of the magnetic storage unit. As shown in fig. 4, the method includes:
s100: and determining the input direction and the current density of the current according to the combination of the data to be written, wherein the input direction is one of two opposite directions of the arrangement directions of the plurality of magnetic tunnel junctions.
S200: and inputting current to the spin orbit coupling layer according to the input direction so that the combination of the resistance states of the plurality of magnetic tunnel junctions corresponds to the combination of the data to be written.
Specifically, when the magnetic storage unit further comprises a control module, the control module may determine an input direction of a current and a current density according to a combination of data to be written, where the input direction is one of two opposite directions of the arrangement directions of the plurality of magnetic tunnel junctions. Inputting a current to the spin orbit coupling layer A1 according to the input direction to make the combination of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 resistance state correspond to the combination of data to be written. It is understood that the input direction and the current density of the current may be determined according to the predetermined current input direction, the current density, and the combination of the data to be written corresponding to the different data combinations stored in the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2, and the current corresponding to the current density may be input to the spin orbit coupling layer a1 according to the input direction to make the combinations of the resistance states of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 different, thereby achieving the deterministic writing of the data combination to be written.
In a preferred embodiment, when the magnetic storage unit further includes a read block, a sensing current may be applied to the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 by the read block, and the logic number stored in the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 is determined according to a variation of the sensing current. Specifically, as shown in fig. 1, the reading module may input the detection current to the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 through the interface S1 and the interface S2, respectively, where the resistance state of the magnetic tunnel junction is a high resistance state or a low resistance state, and the current change speeds of the detection current flowing through the high resistance state and the low resistance state are different, so that it can be determined whether the magnetic tunnel junction of the input detection current is in the high resistance state or the low resistance state according to the change speed of the detection current, and data reading is achieved. It should be noted that the interface S1 and the interface S2 may be different interfaces, and input independent detection currents to the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 respectively to read data; the interface S1 and the interface S2 may also be the same interface, and simultaneously input the detection currents to the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 to respectively read data, or sequentially input the detection currents to the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 to respectively read data, and a person skilled in the art may set the interface S1 and the interface S2 according to actual requirements, and a person skilled in the art may also set specific circuit structures of the control module and the read module according to actual requirements, which is a conventional technical means in the art, and details are not described herein.
Since the principle of solving the problem by the method is similar to that of the above magnetic memory cell, the implementation of the method can be referred to the implementation of the above magnetic memory cell, and is not described herein again.
Based on the same principle, the embodiment also discloses a magnetic random access memory. The magnetic random access memory comprises a plurality of magnetic storage units arranged in an array.
Magnetic random access memory, including permanent and non-permanent, removable and non-removable media, may implement any method or technology for storing information. The information may be computer readable instructions, data structures, modules of a program, or other data. Examples of magnetic random access memory applications include, but are not limited to, Random Access Memory (RAM), Read Only Memory (ROM), Electrically Erasable Programmable Read Only Memory (EEPROM), flash memory or other memory technology, compact disc read only memory (CD-ROM), Digital Versatile Discs (DVD) or other optical storage, magnetic cassettes, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other non-transmission medium, which can be used to store information that can be accessed by a computing device.
Since the principle of solving the problem of the magnetic random access memory is similar to that of the magnetic storage unit, the implementation of the magnetic random access memory can be referred to the implementation of the magnetic storage unit, and is not described herein again.
Based on the same principle, the embodiment also discloses a computer device which comprises a memory, a processor and a computer program which is stored on the memory and can run on the processor.
The processor and/or the memory comprise magnetic storage units as described in this embodiment.
The magnetic storage unit illustrated in the above embodiments may be specifically provided in a product device having a certain function. A typical implementation device is a computer device, which may be, for example, a personal computer, a laptop computer, a cellular telephone, a camera phone, a smart phone, a personal digital assistant, a media player, a navigation device, an email device, a game console, a tablet computer, a wearable device, or a combination of any of these devices.
In a typical example, the computer device specifically comprises a memory, a processor and a computer program stored on the memory and executable on the processor, the processor and/or the memory comprising the magnetic storage unit as described in the present embodiment.
Referring now to FIG. 5, shown is a schematic diagram of a computer device 600 suitable for use in implementing embodiments of the present application.
As shown in fig. 5, the computer apparatus 600 includes a Central Processing Unit (CPU)601 which can perform various appropriate works and processes according to a program stored in a Read Only Memory (ROM)602 or a program loaded from a storage section 608 into a Random Access Memory (RAM)) 603. In the RAM603, various programs and data necessary for the operation of the system 600 are also stored. The CPU601, ROM602, and RAM603 are connected to each other via a bus 604. An input/output (I/O) interface 605 is also connected to bus 604.
The following components are connected to the I/O interface 605: an input portion 606 including a keyboard, a mouse, and the like; an output section 607 including a Cathode Ray Tube (CRT), a liquid crystal feedback (LCD), and the like, and a speaker and the like; a storage section 608 including a hard disk and the like; and a communication section 609 including a network interface card such as a LAN card, a modem, or the like. The communication section 609 performs communication processing via a network such as the internet. The driver 610 is also connected to the I/O interface 605 as needed. A removable medium 611 such as a magnetic disk, an optical disk, a magneto-optical disk, a semiconductor memory, or the like is mounted on the drive 610 as necessary, so that a computer program read out therefrom is mounted as necessary on the storage section 608.
The present invention is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the invention. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
It should also be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
As will be appreciated by one skilled in the art, embodiments of the present application may be provided as a method, system, or computer program product. Accordingly, the present application may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present application may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
The application may be described in the general context of computer-executable instructions, such as program modules, being executed by a computer. Generally, program modules include routines, programs, objects, components, data structures, etc. that perform particular tasks or implement particular abstract data types. The application may also be practiced in distributed computing environments where tasks are performed by remote processing devices that are linked through a communications network. In a distributed computing environment, program modules may be located in both local and remote computer storage media including memory storage devices.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the system embodiment, since it is substantially similar to the method embodiment, the description is simple, and for the relevant points, reference may be made to the partial description of the method embodiment.
The above description is only an example of the present application and is not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.
Claims (11)
1. A magnetic storage unit is characterized by comprising a spin orbit coupling layer and a plurality of magnetic tunnel junctions arranged on the spin orbit coupling layer, wherein the magnetic tunnel junctions are different in size, and the distance between two adjacent magnetic tunnel junctions is in a nanometer level;
when currents with different current densities are respectively input to the spin orbit coupling layer along two opposite directions of the arrangement directions of the plurality of magnetic tunnel junctions, combinations of resistance states of the plurality of magnetic tunnel junctions are different.
2. The magnetic memory cell of claim 1, wherein the plurality of magnetic tunnel junctions includes a first magnetic tunnel junction and a second magnetic tunnel junction, and wherein the arrangement directions of the first magnetic tunnel junction and the second magnetic tunnel junction include two opposite current input directions, a first direction and a second direction;
when a current with a first current density is input to the spin-orbit coupling layer along the first direction, the resistance state of the first magnetic tunnel junction is a first resistance state, and the resistance state of the second magnetic tunnel junction is a first resistance state;
when a current with a second current density is input to the spin-orbit coupling layer along the first direction, the resistance state of the first magnetic tunnel junction is a first resistance state, and the resistance state of the second magnetic tunnel junction is a second resistance state;
when a current with a third current density is input to the spin-orbit coupling layer along the second direction, the resistance state of the first magnetic tunnel junction is a second resistance state, and the resistance state of the second magnetic tunnel junction is a second resistance state;
when a current of a fourth current density is input to the spin-orbit coupling layer along the second direction, the resistance state of the first magnetic tunnel junction is a second resistance state, and the resistance state of the second magnetic tunnel junction is a first resistance state.
3. The magnetic memory cell of claim 1, wherein the dimensions of the plurality of magnetic tunnel junctions increase sequentially or decrease sequentially along the direction of arrangement of the plurality of magnetic tunnel junctions.
4. The magnetic memory cell of claim 2, wherein the first and second magnetic tunnel junctions have in-plane anisotropy.
5. The magnetic storage cell of claim 4, wherein the shape of the first magnetic tunnel junction and/or the second magnetic tunnel junction is one of elliptical, triangular, rectangular, and semicircular.
6. The magnetic memory cell of claim 2, wherein at least one of the first magnetic tunnel junction and the second magnetic tunnel junction has perpendicular anisotropy;
the magnetic storage cell further includes an externally applied magnetic field disposed corresponding to the magnetic tunnel junction having perpendicular anisotropy or the magnetic tunnel junction having perpendicular anisotropy has an equivalent externally applied magnetic field.
7. The magnetic storage cell of claim 6 wherein the magnetic tunnel junction having perpendicular anisotropy is circular or square in shape.
8. The magnetic memory cell of claim 6, wherein the memory cell comprises a magnetic field generating device that provides the externally applied magnetic field or equivalently the externally applied magnetic field; alternatively, the first and second electrodes may be,
the first magnetic tunnel junction and/or the second magnetic tunnel junction comprise a fixed layer, a barrier layer and a free layer which are sequentially arranged from top to bottom, and the section of at least one of the fixed layer, the barrier layer and the free layer is trapezoidal and is used for providing the external magnetic field; alternatively, the first and second electrodes may be,
the spin orbit coupling layer is made of an antiferromagnetic material, and forms an exchange bias field with the free layer and is used for providing the external magnetic field; alternatively, the first and second electrodes may be,
the magnetic tunnel junction comprises a magnetic material layer for providing the externally applied magnetic field; alternatively, the first and second electrodes may be,
the magnetic tunnel junction has a shape capable of forming a shape anisotropy field for providing an equivalent magnetic field of the externally applied magnetic field; alternatively, the first and second electrodes may be,
the free layer has a perpendicular anisotropy of gradient for providing an equivalent magnetic field to the externally applied magnetic field.
9. A method of writing data to a magnetic memory cell according to any of claims 1 to 8, comprising:
determining the input direction and the current density of current according to the combination of data to be written, wherein the input direction is one of two opposite directions of the arrangement directions of the plurality of magnetic tunnel junctions;
and inputting current to the spin orbit coupling layer according to the input direction so that the combination of the resistance states of the plurality of magnetic tunnel junctions corresponds to the combination of the data to be written.
10. A magnetic random access memory comprising a plurality of magnetic storage cells according to any of claims 1-8 arranged in an array.
11. A computer device comprising a memory, a processor, and a computer program stored on the memory and executable on the processor,
the processor and/or the memory comprise a magnetic storage unit as claimed in any one of claims 1-8.
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