CN109633223B - Saturation voltage drop measuring circuit of high-voltage IGBT device - Google Patents
Saturation voltage drop measuring circuit of high-voltage IGBT device Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G01R19/10—Measuring sum, difference or ratio
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
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Abstract
The invention provides a saturation voltage drop measuring circuit of a high-voltage IGBT device, which comprises an IGBT to be measured, wherein the grid electrode of the IGBT to be measured inputs saturation voltage, the drain electrode of the IGBT to be measured is grounded, and the saturation voltage drop measuring circuit also comprises a current mirror unit, a charging and discharging unit and a current limiting protection unit; the current mirror unit is provided with a power end, a control end and an output end, wherein the power end of the current mirror unit inputs first current, and the control end of the current mirror unit inputs an execution signal; the charging and discharging unit is provided with a charging end, a discharging end and a grounding end, and the charging end of the charging and discharging unit inputs charging current; the current limiting protection unit is provided with a control end, an input end and an output end, the control end of the current limiting protection unit is coupled with the output end of the current mirror unit, the input end of the current limiting protection unit is coupled with the discharge end of the charge-discharge unit, and the output end of the current limiting protection unit is coupled with the source electrode of the IGBT to be tested, so that the oscilloscope can be hung between the collector electrode and the emitter electrode of the IGBT element to measure voltage.
Description
Technical Field
The invention belongs to the technical field of measurement and detection, and particularly relates to a saturation voltage drop measuring circuit of a high-voltage IGBT device.
Background
IGBT (InsulatedGate Bipolar Transistor) it is an insulated gate bipolar transistor, and is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), and has the advantages of high input impedance of MOSFET and low conduction voltage drop of GTR. The GTR saturation voltage is reduced, the current carrying density is high, but the driving current is high; the MOSFET has small driving power, high switching speed, large conduction voltage drop and small current carrying density. The IGBT combines the advantages of the two devices, and has small driving power and reduced saturation voltage.
The saturation voltage drop (VCEsat) of the IGBT is an important index for measuring whether the IGBT is over-current, under the condition that the gate drive voltage exists, the over-current of the IGBT occurs, the VCE can rise sharply, and generally when the VCE is about 10us greater than the saturation voltage drop, the IGBT can be damaged; in addition, the dynamic power consumption of the IGBT, namely the energy loss caused by the fact that current passes through the IGBT in the working process and the equivalent on-resistance of the IGBT heats, is also one of parameters for measuring the performance of the IGBT. The on-resistance of the IGBT can be calculated from the saturation voltage drop and the on-current of the IGBT. Therefore, whether the saturation voltage drop of one IGBT can be accurately measured has important significance in the aspects of evaluating the performance, the working energy consumption and the like of the IGBT.
In general, the working dc bus voltages at two ends of the IGBT are about hundreds of volts, and even for an IGBT with a blocking voltage of several kv, it is possible to work at the upper kv, and the saturation voltage drop is only about several volts and is a low value, and at present, the value of some low conduction voltage drops is only one to two volts. On the other hand, the scope itself has a limited kinescope size, and in order to be able to accurately read out the saturation voltage, it is often necessary to increase the voltage sensitivity, but the waveform that may be displayed is not an actual waveform due to the influence of saturation of an amplifier inside the scope, or the like. In addition, the on-state voltage drop at two ends of the CE is measured when the IGBT works, and the on-state voltage drop is easily influenced by clutter caused by high-speed commutation of the IGBT. Therefore, to measure the saturation voltage drop of the IGBT during the switching operation, it cannot be obtained by directly hanging an oscilloscope between the collector and emitter of the IGBT. In the prior art, the requirement on a detection circuit of the IGBT is high, a high-voltage high-current power supply is required to supply power, and the damage to a device to be detected is likely to be caused.
Disclosure of Invention
The invention aims to provide a saturation voltage drop measuring circuit of a high-voltage IGBT device, which solves the technical problem that the on-state voltage drop at two ends of a CE is measured when the IGBT works in the prior art, and the on-state voltage drop is easily influenced by clutter caused by high-speed current conversion of the IGBT.
In order to achieve the above purpose, the invention adopts the following technical scheme: the saturation voltage drop measuring circuit of the high-voltage IGBT device comprises an IGBT to be measured, wherein the grid electrode of the IGBT to be measured inputs saturation voltage, the drain electrode of the IGBT to be measured is grounded, and the saturation voltage drop measuring circuit also comprises a current mirror unit, a charging and discharging unit and a current limiting protection unit; the current mirror unit is provided with a power end, a control end and an output end, wherein the power end of the current mirror unit inputs a first current, and the control end of the current mirror unit inputs an execution signal;
the charging and discharging unit is provided with a charging end, a discharging end and a grounding end, and the charging end of the charging and discharging unit inputs charging current;
the current limiting protection unit is provided with a control end, an input end and an output end, wherein the control end of the current limiting protection unit is coupled with the output end of the current mirror unit, the input end of the current limiting protection unit is coupled with the discharge end of the charge-discharge unit, and the output end of the current limiting protection unit is coupled with the source electrode of the IGBT to be tested;
the current mirror unit is used for: if the control end of the current mirror unit inputs an execution signal, outputting a second current to the current limiting protection unit and outputting a control signal to the discharge end of the charge-discharge unit; the charging and discharging unit is used for: if the discharge end of the charge-discharge unit receives the control signal, outputting discharge current to the current-limiting protection unit;
the current limiting protection unit is used for: and when the current limiting protection unit receives the discharge current and the second current at the same time, the current limiting protection unit outputs a detection current.
Further, the current mirror unit includes a first PNP triode, a second PNP triode, a first resistor, a second resistor, a third resistor and a first switch unit, one end of the first resistor and one end of the second resistor are both input with the first current, the other end of the first resistor and the other end of the second resistor are respectively coupled to an emitter of the first PNP triode and an emitter of the second PNP triode, a base of the first PNP triode is coupled to a base of the second PNP triode, a collector of the first PNP triode is coupled to one end of the third resistor, a collector of the second PNP triode is coupled to a control end of the current-limiting protection unit, a first node is arranged between the base of the first PNP triode and the base of the second PNP triode, a second node is arranged between the emitter of the first PNP triode and the third resistor, the first node is connected to the second node, a collector of the first PNP triode is coupled to a first end of the first switch unit, and the other end of the first PNP unit is coupled to a first terminal of the first switch unit.
Further, the first switch unit is a first NPN triode, a base electrode of the first NPN triode is connected to the execution signal, a collector electrode of the first NPN triode is coupled to the other end of the third resistor, and an emitter electrode of the first NPN triode is grounded.
Further, the execution signal is a square wave signal.
Further, the charge-discharge unit comprises a capacitor group, a charging resistor and a second switch unit, the capacitor group is composed of at least two capacitors connected in parallel, the capacitor group is provided with a first end and a second end, one end of the charging resistor is used for inputting charging current, the other end of the charging resistor is coupled to the first end of the capacitor group, the second end of the capacitor group is grounded, a third node is arranged between the first end of the capacitor group and the other end of the charging resistor, the third node is coupled to the first end of the second switch unit, the second end of the second switch unit is coupled to the input end of the current limiting protection unit, and the third end of the second switch unit is coupled to the output end of the current mirror unit.
Further, the second switch unit is a MOS transistor, a gate of the MOS transistor is coupled to the output end of the current mirror unit, a source of the MOS transistor is coupled to the third node, and a drain of the MOS transistor is coupled to the input end of the current limiting protection unit.
Further, the current limiting protection unit includes a zener diode, a first on-resistance and a second on-resistance, wherein a cathode of the zener diode is coupled to an output end of the current mirror unit, one end of the first on-resistance is coupled to a cathode of the zener diode, the other end of the first on-resistance and one end of the first on-resistance are coupled to a discharge end of the charge/discharge unit, and the other end of the first on-resistance and an anode of the zener diode are coupled to a source electrode of the IGBT to be tested.
Further, the circuit further comprises a second filter capacitor, wherein one end of the second filter capacitor is coupled to the discharging end of the charging and discharging unit, and the other end of the second filter capacitor is coupled to the output end of the current mirror unit.
Further, the IGBT device further comprises a signal adjusting unit, wherein an adjusting end of the signal adjusting unit is coupled to the grid electrode of the IGBT to be tested, a first motionless end of the signal adjusting unit inputs an opening voltage, and a second motionless end of the signal adjusting unit is grounded.
Further, the device also comprises a first filtering unit, wherein the first filtering unit comprises a fourth resistor and a first filtering capacitor, and the fourth resistor is connected in series between the grid electrodes of the IGBT to be tested and connected with the adjusting end of the signal adjusting unit; one end of the first filter capacitor is coupled between the grid electrode of the IGBT to be tested and the fourth resistor, and the other end of the first filter capacitor is grounded.
The saturation voltage drop measuring circuit of the high-voltage IGBT device has the beneficial effects that: compared with the prior art, the execution signal V1 is used for controlling the current mirror unit to send the second current I3 and the control signal V2, and the measurement circuit does not need to manually control the output of the current mirror unit, so that the convenience of detecting the high-voltage IGBT device is improved. The second current I3 enables the current-limiting protection unit to be in a stable working state, and plays a role in protecting the IGBT device to be tested. After the discharge current I3 of the charge-discharge unit flows into the current-limiting protection unit in a stable working state, the discharge current I3 forms a stable detection current I4 so as to be convenient for the oscilloscope to detect. According to the specification of the IGBT to be tested, the resistance values of different current limiting protection units are changed, so that the magnitude of the detection current is changed. The charge-discharge unit is equivalent to a high-voltage current power supply, so that the cost of the detection circuit is reduced, and the test flow is simplified.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic circuit diagram of a saturation voltage drop measurement circuit of a high-voltage IGBT device according to an embodiment of the present invention;
fig. 2 is a schematic circuit diagram of a current mirror unit of a saturation voltage drop measurement circuit of a high-voltage IGBT device according to an embodiment of the present invention;
fig. 3 is a second circuit schematic diagram of a current mirror unit of a saturation voltage drop measurement circuit of a high-voltage IGBT device according to an embodiment of the present invention;
fig. 4 is a schematic circuit diagram of a charge-discharge unit of a saturation voltage drop measurement circuit of a high-voltage IGBT device according to an embodiment of the present invention;
fig. 5 is a second schematic circuit diagram of a charge-discharge unit of a saturation voltage drop measurement circuit of a high-voltage IGBT device according to an embodiment of the present invention;
fig. 6 is a schematic circuit diagram of a current limiting protection unit of a saturation voltage drop measurement circuit of a high-voltage IGBT device according to an embodiment of the present invention;
fig. 7 is a second schematic circuit diagram of a saturation voltage drop measurement circuit of a high-voltage IGBT device according to an embodiment of the present invention;
fig. 8 is a schematic circuit diagram of a signal conditioning unit of a saturation voltage drop measurement circuit of a high-voltage IGBT device according to an embodiment of the present invention;
fig. 9 is a schematic circuit diagram of a first filtering unit of a saturation voltage drop measurement circuit of a high-voltage IGBT device according to an embodiment of the present invention;
fig. 10 is a circuit schematic diagram III of a saturation voltage drop measurement circuit of a high-voltage IGBT device according to an embodiment of the present invention.
Wherein, each reference sign in the figure:
1. IGBT to be tested; 11. a first to-be-measured point; 12. the second to-be-measured point; 2. a current mirror unit; 21. a first switching unit; 3. a charge-discharge unit; 31. a second switching unit; 4. a current limiting protection unit; 5. a first node; 6. a second node; 7. a third node; 8. a signal adjusting unit; 9. a first filtering unit.
Detailed Description
In order to make the technical problems, technical schemes and beneficial effects to be solved more clear, the invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
It will be understood that when an element is referred to as being "mounted" or "disposed" on another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
It is to be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are merely for convenience in describing and simplifying the description based on the orientation or positional relationship shown in the drawings, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus are not to be construed as limiting the invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
Referring to fig. 1, a saturation voltage drop measurement circuit of a high-voltage IGBT device provided by the present invention will now be described. The saturation voltage drop measuring circuit of the high-voltage IGBT device comprises an IGBT1 to be measured, wherein the grid electrode of the IGBT1 to be measured inputs saturation voltage, the drain electrode of the IGBT1 to be measured is grounded, and the saturation voltage drop measuring circuit also comprises a current mirror unit 2, a charge-discharge unit 3 and a current limiting protection unit 4;
the current mirror unit 2 is provided with a power end, a control end and an output end, wherein the power end of the current mirror unit 2 inputs a first current I1, and the control end of the current mirror unit 2 inputs an execution signal V1;
the charging and discharging unit 3 is provided with a charging end, a discharging end and a grounding end, and the charging end of the charging and discharging unit 3 inputs a charging current I5;
the current limiting protection unit 4 is provided with a control end, an input end and an output end, the control end of the current limiting protection unit 4 is coupled with the output end of the current mirror unit 2, the input end of the current limiting protection unit 4 is coupled with the discharge end of the charge and discharge unit 3, and the output end of the current limiting protection unit 4 is coupled with the source electrode of the IGBT1 to be tested;
the current mirror unit 2 is configured to: the control end of the current mirror unit 2 outputs a second current I3 to the current limiting protection unit 4 and outputs a control signal V2 to the charge and discharge unit 3 if the execution signal V1 is input;
the charge and discharge unit 3 is configured to: when the discharge end of the charge-discharge unit 3 receives the control signal V2, a discharge current I3 is output;
the current limiting protection unit 4 is used for: when the current limiting protection unit 4 receives the discharge current I3 and the second current I2 at the same time, the current limiting protection unit 4 outputs the detection current I4.
Compared with the prior art, the saturation voltage drop measuring circuit of the high-voltage IGBT device provided by the invention has the advantages that the execution signal V1 is used for controlling the current mirror unit 2 to send the second current I3 and the control signal V2, the measuring circuit does not need to manually control the output of the current mirror unit 2, and the detection convenience of the high-voltage IGBT device is improved. The second current I3 enables the current-limiting protection unit 4 to be in a stable working state, and plays a role in protecting the IGBT1 to be tested. After the discharge current I3 of the charge and discharge unit 3 flows into the current limiting protection unit 4 in a stable working state, the discharge current I3 forms a stable detection current I4 so as to be convenient for the oscilloscope to detect. According to the specification of the IGBT1 to be tested, the resistance values of different current limiting protection units 4 are changed, so that the magnitude of the detection current is changed. The charge and discharge unit 3 is equivalent to a high-voltage current power supply, reduces the cost of a detection circuit, and simplifies the test flow.
Further, referring to fig. 2, as a specific embodiment of the saturation voltage drop measurement circuit of the high-voltage IGBT device provided by the present invention, the current mirror unit 2 includes a first PNP transistor Q1, a second PNP transistor Q2, a first resistor R1, a second resistor R2, a third resistor R3, and a first switch unit 21, wherein a first current I1 is input to one end of the first resistor R1 and one end of the second resistor R2, the other end of the first resistor R1 and the other end of the second resistor R2 are respectively coupled to an emitter of the first PNP transistor Q1 and an emitter of the second PNP transistor Q2, a base of the first PNP transistor Q1 is coupled to a base of the second PNP transistor Q2, a collector of the first PNP transistor Q1 is coupled to one end of the third resistor R3, a collector of the second PNP transistor Q2 is coupled to a control end of the current limiting protection unit 4, a first node 5 is disposed between the base of the first PNP transistor Q1 and the base of the second transistor Q2, the other end of the first PNP transistor Q1 is coupled to the third node 21 is connected to the third node 6, and the other end of the first PNP transistor Q1 is connected to the third node 6 is connected to the third node 21.
The first switch unit 21 is turned on when the execution signal V1 is input, and after the first current I1 passes through the first PNP triode Q1, the second PNP triode Q2, the first resistor R1 and the second resistor R2, a stable execution signal V1 and a second current I2 are generated, so that the current limiting protection unit 4 and the charge and discharge unit 3 are in the same working state, and the accuracy of the test of the measurement circuit is ensured.
Further, referring to fig. 3, as a specific embodiment of the saturation voltage drop measurement circuit of the high voltage IGBT device provided by the present invention, the first switch unit 21 is a first NPN transistor Q3, a base of the first NPN transistor Q3 is connected to the execution signal V1, a collector of the first NPN transistor Q3 is coupled to the other end of the third resistor R3, and an emitter of the first NPN transistor Q3 is grounded.
The first NPN triode Q3 is suitable for frequent on-off, long in service life and capable of reducing maintenance cost of the measuring circuit.
Further, referring to fig. 3, as a specific embodiment of the saturation voltage drop measurement circuit of the high voltage IGBT device provided by the present invention, the execution signal V1 is a square wave signal.
The on-off of the first NPN triode Q3 is controlled by a square wave signal, so that the method is very convenient. The pulse width of the square wave signal is adjustable, so that the on-off time of the first NPN triode Q3 is convenient to adjust, the power-on time of the IGBT1 device to be tested is controlled, the power-on time of the IGBT1 device to be tested is enabled to be in proper time, and the effect of protecting the IGBT1 device to be tested is achieved.
Specifically, the pulse width of the square wave signal is set to 1ms, and the amplitude is set to 5V.
Further, referring to fig. 4, as a specific embodiment of the saturation voltage drop measurement circuit of the high voltage IGBT device provided by the present invention, the charge/discharge unit 3 includes a capacitor set, a charge resistor R4 and a second switch unit 31, the capacitor set is composed of at least two capacitors connected in parallel, the capacitor set has a first end and a second end, one end of the charge resistor R4 is input with the charge current I5, the other end is coupled to the first end of the capacitor set, the second end of the capacitor set is grounded, a third node 7 is disposed between the first end of the capacitor set and the other end of the charge resistor R4, the third node 7 is coupled to the first end of the second switch unit 31, the second end of the second switch unit 31 is coupled to the input end of the current limiting protection unit 4, and the third end of the second switch unit 31 is coupled to the output end of the current mirror unit 2.
The charging resistor R4 plays a role in diversion, so that charging current is input to the capacitor bank. The second switching unit 31 functions to control the discharge of the charge and discharge unit 3. When the second switching unit 31 is turned on, the charge and discharge unit 3 performs discharge; when the second switching unit 31 is turned off, the charge/discharge unit 3 performs charging. The control of the charge and discharge unit 3 at the time of the second switching unit 31 is very convenient.
Specifically, the capacitor group is composed of electrolytic capacitors.
Further, referring to fig. 5, as a specific embodiment of the saturation voltage drop measurement circuit of the high-voltage IGBT device provided by the present invention, the second switch unit 31 is a MOS transistor Q4, a gate of the MOS transistor Q4 is coupled to the output end of the current mirror unit 2, a source of the MOS transistor Q4 is coupled to the third node 7, and a drain of the MOS transistor Q4 is coupled to the input end of the current limiting protection unit 4.
The MOS transistor Q4 does not have charge storage effect, so that the switching speed of the MOS transistor Q4 is faster in switching application.
Further, referring to fig. 6, as a specific embodiment of the saturation voltage drop measurement circuit of the high voltage IGBT device provided by the present invention, the current limiting protection unit 4 includes a zener diode D1, a first on-resistance R5, and a second on-resistance R6, the cathode of the zener diode D1 is coupled to the output end of the current mirror unit 2, one end of the first on-resistance R5 is coupled to the cathode of the zener diode D1, the other end of the first on-resistance R5 and one end of the first on-resistance R5 are coupled to the discharge end of the charge/discharge unit 3, and the other end of the first on-resistance R5 and the anode of the zener diode D1 are coupled to the source of the IGBT1 to be tested.
The current mirror unit 2 controls the magnitude of the current passing through the zener diode D1, and controls the zener diode D1 to operate in the reverse region. After the charge/discharge unit 3 discharges, the voltage on the zener diode D1 is equivalent to the voltage of the second on-resistance R6, so as to calculate the magnitude of the current passing through the IGBT1 to be measured. If the second current I2 exceeds the set value, the zener diode D1 breaks down, and the first on-resistance R5 plays a role in current limiting protection.
Further, referring to fig. 7, as a specific embodiment of the saturation voltage drop measurement circuit of the high voltage IGBT device provided by the present invention, the saturation voltage drop measurement circuit further includes a second filter capacitor C3, wherein one end of the second filter capacitor C3 is coupled to the discharge end of the charge/discharge unit 3, and the other end is coupled to the output end of the current mirror unit 2.
The second filter capacitor C3 plays a role in filtering, and absorbs clutter generated by the second switch unit 31 at the instant of on-off, so as to reduce the influence of saturation voltage drop waveforms of the IGBT1 to be tested.
Further, referring to fig. 8, as a specific implementation manner of the saturation voltage drop measurement circuit of the high-voltage IGBT device provided by the present invention, the saturation voltage drop measurement circuit further includes a signal adjustment unit 8, an adjustment end of the signal adjustment unit 8 is coupled to the gate of the IGBT1 to be tested, a first motionless end of the signal adjustment unit 8 inputs the turn-on voltage V4, and a second motionless end of the signal adjustment unit 8 is grounded.
The saturation voltage is changed, so that the conduction voltage drop of the IGBT1 to be measured with different specifications can be measured conveniently.
The signal conditioning unit 8 is a varistor.
Further, referring to fig. 9, as a specific implementation manner of the saturation voltage drop measurement circuit of the high-voltage IGBT device provided by the present invention, the saturation voltage drop measurement circuit further includes a first filter unit 9, where the first filter unit 9 includes a fourth resistor R8 and a first filter capacitor C4, and the fourth resistor R8 is connected in series between the gates of the IGBTs 1 to be measured and the regulation terminals of the signal regulation unit 8; one end of the first filter capacitor C4 is coupled between the grid electrode of the IGBT1 to be tested and the fourth resistor R8, and the other end of the first filter capacitor C is grounded.
The first filtering unit 9 filters the saturated voltage to reduce the influence of clutter on the IGBT1 to be tested.
Further, referring to fig. 10, as a specific embodiment of the saturation voltage drop measurement circuit of the high-voltage IGBT device provided by the present invention, the saturation voltage drop measurement circuit further includes a shunt resistor R9, one end of the shunt resistor R9 is coupled to the anode of the zener diode D1, the other end is grounded, and a first to-be-measured point 11 is provided at the source of the to-be-measured IGBT 1; the drain electrode of the IGBT1 to be tested is provided with a second to-be-tested point 12, and the first to-be-tested point 11 and the second to-be-tested point 12 are used for being connected with an oscilloscope.
The shunt resistor R9 plays a role in protecting the IGBT1 to be tested.
Specifically, the turn-on voltage V4, the charging current I5, and the first current I1 are provided by a 20V regulated power supply.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (8)
1. The saturation voltage drop measuring circuit of the high-voltage IGBT device is characterized by comprising an IGBT to be measured, wherein the grid electrode of the IGBT to be measured inputs saturation voltage, the drain electrode of the IGBT to be measured is grounded, and the circuit further comprises a current mirror unit, a charging and discharging unit and a current limiting protection unit; the current mirror unit is provided with a power end, a control end and an output end, wherein the power end of the current mirror unit inputs a first current, and the control end of the current mirror unit inputs an execution signal; the charging and discharging unit is provided with a charging end, a discharging end and a grounding end, and the charging end of the charging and discharging unit inputs charging current; the current limiting protection unit is provided with a control end, an input end and an output end, wherein the control end of the current limiting protection unit is coupled with the output end of the current mirror unit, the input end of the current limiting protection unit is coupled with the discharge end of the charge-discharge unit, and the output end of the current limiting protection unit is coupled with the source electrode of the IGBT to be tested; the current mirror unit is used for: if the control end of the current mirror unit inputs an execution signal, outputting a second current to the current limiting protection unit and outputting a control signal to the discharge end of the charge-discharge unit; the charging and discharging unit is used for: if the discharge end of the charge-discharge unit receives the control signal, outputting discharge current to the current-limiting protection unit;
the current limiting protection unit is used for: when the current limiting protection unit receives the discharge current and the second current at the same time, the current limiting protection unit outputs a detection current;
the current mirror unit comprises a first PNP triode, a second PNP triode, a first resistor, a second resistor, a third resistor and a first switch unit, wherein one end of the first resistor and one end of the second resistor are respectively input with the first current, the other end of the first resistor and the other end of the second resistor are respectively coupled with an emitter of the first PNP triode and an emitter of the second PNP triode, a base electrode of the first PNP triode is coupled with a base electrode of the second PNP triode, a collector electrode of the first PNP triode is coupled with one end of the third resistor, a collector electrode of the second PNP triode is coupled with a control end of the current limiting protection unit, a first node is arranged between the base electrode of the first PNP triode and the base electrode of the second PNP triode, a second node is arranged between the emitter of the first PNP triode and the third resistor, the first node is connected with the second node, a first end of the first switch unit is coupled with a third end of the third resistor, and the first switch unit is connected with the ground;
the execution signal is a square wave signal.
2. The saturation voltage drop measurement circuit of the high voltage IGBT device of claim 1 wherein the first switching unit is a first NPN transistor having a base connected to the execution signal, a collector coupled to the other end of the third resistor, and an emitter grounded.
3. The saturation voltage drop measurement circuit of the high-voltage IGBT device according to claim 2, wherein the charge-discharge unit includes a capacitor group, a charge resistor, and a second switch unit, the capacitor group is composed of at least two capacitors connected in parallel, the capacitor group has a first end and a second end, one end of the charge resistor inputs a charge current, the other end is coupled to the first end of the capacitor group, the second end of the capacitor group is grounded, a third node is disposed between the first end of the capacitor group and the other end of the charge resistor, the third node is coupled to the first end of the second switch unit, the second end of the second switch unit is coupled to the input end of the current limiting protection unit, and the third end of the second switch unit is coupled to the output end of the current mirror unit.
4. The saturation voltage drop measurement circuit of the high voltage IGBT device according to claim 3, wherein the second switching unit is a MOS transistor, a gate of the MOS transistor is coupled to the output terminal of the current mirror unit, a source of the MOS transistor is coupled to the third node, and a drain of the MOS transistor is coupled to the input terminal of the current limiting protection unit.
5. The saturation voltage drop measurement circuit of the high voltage IGBT device according to claim 1, wherein the current limiting protection unit includes a zener diode, a first on-resistance, and a second on-resistance, the negative electrode of the zener diode is coupled to the output terminal of the current mirror unit, one end of the first on-resistance is coupled to the negative electrode of the zener diode, the other end of the first on-resistance and one end of the first on-resistance are coupled to the discharge terminal of the charge/discharge unit, and the other end of the first on-resistance and the positive electrode of the zener diode are coupled to the source electrode of the IGBT to be tested.
6. The saturation voltage drop measurement circuit of claim 1, further comprising a second filter capacitor, wherein one end of the second filter capacitor is coupled to the discharge end of the charge-discharge unit, and the other end is coupled to the output end of the current mirror unit.
7. The saturation voltage drop measurement circuit of a high voltage IGBT device according to claim 1, further comprising a signal conditioning unit, wherein a conditioning terminal of the signal conditioning unit is coupled to the gate of the IGBT under test, wherein a first stationary terminal of the signal conditioning unit inputs an on voltage, and wherein a second stationary terminal of the signal conditioning unit is grounded.
8. The saturation voltage drop measurement circuit of the high-voltage IGBT device according to claim 7, further comprising a first filter unit, wherein the first filter unit comprises a fourth resistor and a first filter capacitor, and the fourth resistor is connected in series between the grid electrodes of the IGBT to be measured and connected with the adjusting terminal of the signal adjusting unit; one end of the first filter capacitor is coupled between the grid electrode of the IGBT to be tested and the fourth resistor, and the other end of the first filter capacitor is grounded.
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| CN110174603A (en) * | 2019-05-13 | 2019-08-27 | 上海交通大学 | The on-line measurement circuit of power semiconductor conduction voltage drop |
| CN111367352B (en) * | 2020-04-26 | 2021-08-06 | 重庆理工大学 | Circuit for determining source-drain saturation voltage of MOS (Metal oxide semiconductor) tube and operation method thereof |
| CN113252949B (en) * | 2021-05-13 | 2021-11-05 | 北京芯格诺微电子有限公司 | High-precision current sampling circuit with on-chip real-time calibration |
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| CN116660614B (en) * | 2023-08-01 | 2023-09-22 | 苏州贝克微电子股份有限公司 | Voltage detection circuit for improving switching speed |
| CN117092478B (en) * | 2023-10-18 | 2023-12-19 | 成都高投芯未半导体有限公司 | IGBT saturation voltage drop measurement system and method |
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