CN117092478B - IGBT saturation voltage drop measurement system and method - Google Patents
IGBT saturation voltage drop measurement system and method Download PDFInfo
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- CN117092478B CN117092478B CN202311345478.3A CN202311345478A CN117092478B CN 117092478 B CN117092478 B CN 117092478B CN 202311345478 A CN202311345478 A CN 202311345478A CN 117092478 B CN117092478 B CN 117092478B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
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Abstract
The application provides a measuring system and a measuring method for IGBT saturation voltage drop, wherein the measuring system comprises a measuring unit and a wafer, the wafer comprises a first IGBT tube and a second IGBT tube, and the first IGBT tube and the second IGBT tube share a collector; the measuring unit is respectively connected with the emitter of the first IGBT tube, the grid electrode of the first IGBT tube, the emitter of the second IGBT tube and the grid electrode of the second IGBT tube; the measuring unit is used for measuring the saturation voltage drop of the first IGBT tube and/or the saturation voltage drop of the second IGBT tube. When the measuring unit measures the saturation voltage drop of the first IGBT tube and/or the saturation voltage drop of the second IGBT tube, the measuring unit is not connected to the collector electrode of the IGBT tube through the slide table, and extra parasitic resistance corresponding to the slide table is not introduced into the measuring loop, so that the accuracy of the finally measured saturation voltage drop of the first IGBT tube and/or the finally measured saturation voltage drop of the second IGBT tube can be ensured.
Description
Technical Field
The application relates to the field of semiconductor devices, in particular to a measuring system and method for IGBT saturation voltage drop.
Background
IGBT (Insulated Gate Bipolar Transistor) the insulated gate bipolar transistor is a compound full-control voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), and has the advantages of high input impedance of MOSFET and low conduction voltage drop of GTR. The power Transistor (GTR) is a high voltage and high current resistant bipolar junction Transistor (Bipolar Junction Transistor-BJT). The GTR saturation voltage is reduced, the current carrying density is high, but the driving current is high; the MOSFET has small driving power, high switching speed, large conduction voltage drop and small current carrying density. The IGBT combines the advantages of the two devices, and has small driving power and reduced saturation voltage.
For IGBTs, how to accurately measure their corresponding saturation voltage drops becomes a problem of concern to those skilled in the art.
Disclosure of Invention
It is an object of the present application to provide a system and a method for measuring the saturation voltage drop of an IGBT, so as to at least partially improve the above-mentioned problems.
In order to achieve the above purpose, the technical solution adopted in the embodiment of the present application is as follows:
in a first aspect, an embodiment of the present application provides a measurement system for an IGBT saturation voltage drop, where the measurement system includes a measurement unit and a wafer, where the wafer includes a first IGBT tube and a second IGBT tube, and the first IGBT tube and the second IGBT tube share a collector;
the measuring unit is respectively connected with the emitter of the first IGBT tube, the grid electrode of the first IGBT tube, the emitter of the second IGBT tube and the grid electrode of the second IGBT tube;
the measuring unit is used for measuring the saturation voltage drop of the first IGBT tube and/or the saturation voltage drop of the second IGBT tube.
Optionally, the measuring unit includes a first electric signal applying end, a second electric signal applying end, a third electric signal applying end, a fourth connecting end, a first measuring end and a second measuring end;
the first electric signal application end is connected to the grid electrode of the first IGBT tube, the second electric signal application end is connected to the grid electrode of the second IGBT tube, the third electric signal application end is connected to the emitter electrode of the second IGBT tube, the fourth connection end is connected to the emitter electrode of the first IGBT tube, the first measurement end is connected to the emitter electrode of the first IGBT tube, and the second measurement end is connected to the emitter electrode of the second IGBT tube.
Optionally, the measurement unit is configured to apply a first electrical signal to the gate of the first IGBT tube through the first electrical signal application terminal, so that the emitter and the collector of the first IGBT tube are turned on;
the measuring unit is used for applying a second electric signal to the grid electrode of the second IGBT tube through the second electric signal application end so as to conduct the emitter electrode and the collector electrode of the second IGBT tube;
the measuring unit is used for applying a third current signal to the emitter of the second IGBT through the third electric signal application end;
the measuring unit is further used for measuring and obtaining a fusion pressure drop through the first measuring end and the second measuring end, and obtaining a saturation pressure drop of the first IGBT tube and/or a saturation pressure drop of the second IGBT tube based on the fusion pressure drop;
the fusion voltage drop is a voltage drop between the emitter of the second IGBT tube and the emitter of the first IGBT tube when the current of the emitter of the second IGBT tube and the current of the emitter of the first IGBT tube are identical to the third current signal.
Optionally, the saturation voltage drop of the first IGBT tube and/or the saturation voltage drop of the second IGBT tube is one half of the fusion voltage drop.
Optionally, the third electric signal application end and the fourth connection end of the measurement unit are both provided with current samplers, and the current samplers are used for collecting the current of the emitter of the second IGBT tube and the current of the emitter of the first IGBT tube.
Optionally, the first IGBT tube and the second IGBT tube are IGBT tubes of the same model.
Optionally, the first IGBT tube and the second IGBT tube are IGBT tubes of different types.
In a second aspect, an embodiment of the present application provides a method for measuring a saturation voltage drop of an IGBT, which is applied to the above measurement system, where the method includes:
the measuring unit applies a first electric signal to the grid electrode of the first IGBT tube so as to conduct the emitter electrode and the collector electrode of the first IGBT tube;
the measuring unit applies a second electric signal to the grid electrode of the second IGBT tube so as to lead the emitter electrode and the collector electrode of the second IGBT tube to be conducted;
the measuring unit applies a third current signal to the emitter of the second IGBT tube;
the measurement unit is used for measuring and obtaining a fusion voltage drop, and obtaining a saturation voltage drop of the first IGBT tube and/or a saturation voltage drop of the second IGBT tube based on the fusion voltage drop;
the fusion voltage drop is a voltage drop between the emitter of the second IGBT tube and the emitter of the first IGBT tube when the current of the emitter of the second IGBT tube and the current of the emitter of the first IGBT tube are identical to the third current signal.
Optionally, when the first IGBT tube and the second IGBT tube are the same type of IGBT tube, the first electrical signal is the same as the second electrical signal.
Optionally, when the first IGBT tube and the second IGBT tube are different types of IGBT tubes, the first electrical signal is opposite to the second electrical signal.
Compared with the prior art, the measuring system and the measuring method for the IGBT saturation voltage drop provided by the embodiment of the application comprise a measuring unit and a wafer, wherein the wafer comprises a first IGBT tube and a second IGBT tube, and the first IGBT tube and the second IGBT tube share a collector; the measuring unit is respectively connected with the emitter of the first IGBT tube, the grid electrode of the first IGBT tube, the emitter of the second IGBT tube and the grid electrode of the second IGBT tube; the measuring unit is used for measuring the saturation voltage drop of the first IGBT tube and/or the saturation voltage drop of the second IGBT tube. When the measuring unit measures the saturation voltage drop of the first IGBT tube and/or the saturation voltage drop of the second IGBT tube, the measuring unit is not connected to the collector electrode of the IGBT tube through the slide table, and extra parasitic resistance corresponding to the slide table is not introduced into the measuring loop, so that the accuracy of the finally measured saturation voltage drop of the first IGBT tube and/or the finally measured saturation voltage drop of the second IGBT tube can be ensured.
In order to make the above objects, features and advantages of the present application more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered limiting in scope, and that other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a wafer according to an embodiment of the present application;
FIG. 2 is a schematic diagram illustrating connection of a measurement system according to an embodiment of the present disclosure;
FIG. 3 is one of the connection schematic diagrams of the wafer according to the embodiments of the present application;
FIG. 4 is a second schematic diagram of wafer connection according to an embodiment of the present disclosure;
fig. 5 is a flow chart of a method for measuring an IGBT saturation voltage drop according to an embodiment of the present application.
In the figure: 100-measuring unit; 200-wafer; 201-a first IGBT tube; 202-a second IGBT; 203-a metal layer; 204-stage.
Detailed Description
For the purposes of making the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, which are generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, as provided in the accompanying drawings, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures. Meanwhile, in the description of the present application, the terms "first", "second", and the like are used only to distinguish the description, and are not to be construed as indicating or implying relative importance.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
In the description of the present application, it should be noted that, the terms "upper," "lower," "inner," "outer," and the like indicate an orientation or a positional relationship based on the orientation or the positional relationship shown in the drawings, or an orientation or a positional relationship conventionally put in use of the product of the application, merely for convenience of description and simplification of the description, and do not indicate or imply that the apparatus or element to be referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present application.
In the description of the present application, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context.
Some embodiments of the present application are described in detail below with reference to the accompanying drawings. The following embodiments and features of the embodiments may be combined with each other without conflict.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a wafer according to an embodiment of the present application. As shown in fig. 1, the wafer 200 (also referred to as wafer) includes a first IGBT tube 201 and a second IGBT tube 202, and the first IGBT tube 201 and the second IGBT tube 202 share a collector.
As shown in fig. 1, the collector of the first IGBT tube 201 and the collector of the second IGBT tube 202 are conducted to each other through a Metal layer 203 (also referred to as Metal), and a common collector is realized. The side of the metal layer 203 away from the collector of the first IGBT tube 201 and the collector of the second IGBT tube 202 is provided with a carrier 204 (also called Chuck) that is closely adsorbed thereto.
In fig. 1, C1 denotes a collector of the first IGBT tube 201, E1 denotes an emitter of the first IGBT tube 201, G1 denotes a gate of the first IGBT tube 201, C2 denotes a collector of the second IGBT tube 202, E2 denotes an emitter of the second IGBT tube 202, and G2 denotes a gate of the second IGBT tube 202.
The saturation voltage drop (also called Vcesat) of an IGBT tube refers to the voltage between the collector to emitter terminals of the IGBT tube. If the voltage between the collector terminal and the emitter terminal of the IGBT tube is measured directly, probes need to be connected to the collector terminal and the emitter terminal of the IGBT tube, respectively. In the wafer 200 shown in fig. 1, the metal layer 203 is closely adsorbed to the stage 204. The probe may be connected to the collector terminal through stage 204. At this time, the measuring loop of the saturation voltage drop will pass through the stage 204, and in the actual measurement process, the resistor corresponding to the stage 204 is also connected in series in the measuring loop, so that the measured value of the saturation voltage drop is larger. The current measured IGBT tube device needs to be measured through the carrier 204, the parasitic resistance of the whole measuring loop is increased, and when the saturation voltage drop value of the IGBT tube device is small, the parasitic resistance of the external carrier 204 is calculated, so that the deviation of the measured saturation voltage drop is large and inaccurate.
In order to overcome the problems, the embodiment of the application provides a measuring system for the saturation voltage drop of an IGBT. Referring to fig. 2, fig. 2 is a schematic connection diagram of a measurement system according to an embodiment of the present application. As shown in fig. 2, the measurement system includes a measurement unit 100 and a wafer 200, the wafer 200 including a first IGBT tube 201 and a second IGBT tube 202, the first IGBT tube 201 and the second IGBT tube 202 sharing a collector.
The number of the first IGBT tubes 201 and the number of the second IGBT tubes 202 in the wafer 200 are 1 or more.
Measurement unit 100 is connected to emitter E1 of first IGBT tube 201, gate G1 of first IGBT tube 201, emitter E2 of second IGBT tube 202, and gate G2 of second IGBT tube 202, respectively.
The measurement unit 100 is configured to measure a saturation voltage drop of the first IGBT tube 201 and/or a saturation voltage drop of the second IGBT tube 202.
Alternatively, the measurement unit 100 is configured to apply a first electrical signal to the gate G1 of the first IGBT tube 201 to turn on the emitter E1 and the collector C1 of the first IGBT tube 201. For applying a second electrical signal to the gate G2 of the second IGBT tube 202 to turn on the emitter E2 and the collector C2 of the second IGBT tube 202. For applying a third current signal to the emitter E2 of the second IGBT tube 202. And is further configured to measure a blended voltage drop, and obtain a saturation voltage drop of the first IGBT tube 201 and/or a saturation voltage drop of the second IGBT tube 202 based on the blended voltage drop.
The integrated voltage drop is a voltage drop between the emitter E2 of the second IGBT tube 202 and the emitter E1 of the first IGBT tube 201 when the current of the emitter E2 of the second IGBT tube 202 and the current of the emitter E1 of the first IGBT tube 201 are both the same as the third current signal.
In this application, when the measurement unit 100 measures the saturation voltage drop of the first IGBT tube 201 and/or the saturation voltage drop of the second IGBT tube 202, the measurement unit is not connected to the collector of the IGBT tube through the stage 204, and the extra parasitic resistance corresponding to the stage 204 is not introduced into the measurement loop, so that the accuracy of the finally measured saturation voltage drop of the first IGBT tube 201 and/or the finally measured saturation voltage drop of the second IGBT tube 202 can be ensured.
With continued reference to fig. 2, an alternative implementation is provided in the embodiments of the present application with respect to the connection between the measurement unit 100 and the wafer 200, as follows.
The measurement unit 100 includes a first electrical signal application terminal GF1, a second electrical signal application terminal GF2, a third electrical signal application terminal EF2, a fourth connection terminal EF1, a first measurement terminal ES1, and a second measurement terminal ES2.
The first electric signal application terminal GF1 is connected to the gate G1 of the first IGBT tube 201, the second electric signal application terminal GF2 is connected to the gate G2 of the second IGBT tube 202, the third electric signal application terminal EF2 is connected to the emitter E2 of the second IGBT tube 202, the fourth connection terminal EF1 is connected to the emitter E1 of the first IGBT tube 201, the first measurement terminal ES1 is connected to the emitter E1 of the first IGBT tube 201, and the second measurement terminal ES2 is connected to the emitter E2 of the second IGBT tube 202.
In an alternative embodiment, measurement unit 100 is configured to apply a first electrical signal to gate G1 of first IGBT tube 201 via first electrical signal application terminal GF1 to turn on emitter E1 and collector C1 of first IGBT tube 201.
The measurement unit 100 is configured to apply a second electrical signal to the gate G2 of the second IGBT tube 202 through the second electrical signal application terminal GF2 so as to turn on the emitter E2 and the collector C2 of the second IGBT tube 202.
The measurement unit 100 is configured to apply a third current signal to the emitter E2 of the second IGBT tube 202 through the third electrical signal application terminal EF 2.
The measurement unit 100 is further configured to measure the integrated voltage drop through the first measurement end ES1 and the second measurement end ES2, and obtain the saturation voltage drop of the first IGBT tube 201 and/or the saturation voltage drop of the second IGBT tube 202 based on the integrated voltage drop.
The integrated voltage drop is a voltage drop between the emitter E2 of the second IGBT tube 202 and the emitter E1 of the first IGBT tube 201 when the current of the emitter E2 of the second IGBT tube 202 and the current of the emitter E1 of the first IGBT tube 201 are both the same as the third current signal.
Optionally, the first electrical signal and the second electrical signal are current signals, or voltage signals.
Optionally, the saturation voltage drop of the first IGBT tube 201 and/or the saturation voltage drop of the second IGBT tube 202 is one half of the fusion voltage drop.
Optionally, the third electrical signal application terminal EF2 and the fourth connection terminal EF1 of the measurement unit 100 are each provided with a current sampler for collecting the current of the emitter E2 of the second IGBT tube 202 and the current of the emitter E1 of the first IGBT tube 201.
Referring to fig. 3 and fig. 4, fig. 3 is one of the connection schematic diagrams of the wafer according to the embodiment of the present application, and fig. 4 is the second of the connection schematic diagrams of the wafer according to the embodiment of the present application.
In an alternative embodiment, as shown in fig. 3, the first IGBT tube 201 and the second IGBT tube 202 are the same type IGBT tubes, both N type IGBT tubes or both P type IGBT tubes.
In an alternative embodiment, as shown in fig. 4, the first IGBT tube 201 and the second IGBT tube 202 are different types of IGBT tubes. The first IGBT tube 201 is an N-type IGBT tube, and the second IGBT tube 202 is a P-type IGBT tube; alternatively, the first IGBT tube 201 is a P-type IGBT tube, and the second IGBT tube 202 is an N-type IGBT tube.
Alternatively, when the first IGBT tube 201 and the second IGBT tube 202 are the same type of IGBT tube, the first electrical signal is the same as the second electrical signal, and when the first IGBT tube 201 and the second IGBT tube 202 are different types of IGBT tubes, the first electrical signal is opposite to the second electrical signal.
The embodiment of the application also provides a measuring method of the IGBT saturation voltage drop, which is applied to the measuring system. Referring to fig. 5, fig. 5 is a flow chart of a method for measuring an IGBT saturation voltage drop according to an embodiment of the present disclosure. The method for measuring the saturation voltage drop of the IGBT comprises the following steps: s101, S102, S103, and S104 are specifically described below.
S101, the measurement unit applies a first electrical signal to the gate of the first IGBT tube to turn on the emitter and collector of the first IGBT tube.
S102, the measuring unit applies a second electric signal to the grid electrode of the second IGBT tube so as to conduct the emitter electrode and the collector electrode of the second IGBT tube.
S103, the measuring unit applies a third current signal to the emitter of the second IGBT tube.
S104, the measurement unit measures and obtains the fusion voltage drop, and the saturation voltage drop of the first IGBT tube and/or the saturation voltage drop of the second IGBT tube is obtained based on the fusion voltage drop.
The fusion voltage drop is the voltage drop between the emitter of the second IGBT tube and the emitter of the first IGBT tube when the current of the emitter of the second IGBT tube and the current of the emitter of the first IGBT tube are the same as the third current signal.
Alternatively, when the first IGBT tube 201 and the second IGBT tube 202 are the same type of IGBT tube, the first electrical signal is the same as the second electrical signal, and when the first IGBT tube 201 and the second IGBT tube 202 are different types of IGBT tubes, the first electrical signal is opposite to the second electrical signal.
It should be noted that, the method for measuring the IGBT saturation voltage drop provided in this embodiment may perform the functional use shown in the above embodiment of the IGBT saturation voltage drop measurement system, so as to achieve the corresponding technical effect. For a brief description, reference is made to the corresponding parts of the above embodiments, where this embodiment is not mentioned.
In summary, the embodiment of the application provides a measurement system and a method for an IGBT saturation voltage drop, where the measurement system includes a measurement unit and a wafer, and the wafer includes a first IGBT tube and a second IGBT tube, where the first IGBT tube and the second IGBT tube share a collector; the measuring unit is respectively connected with the emitter of the first IGBT tube, the grid electrode of the first IGBT tube, the emitter of the second IGBT tube and the grid electrode of the second IGBT tube; the measuring unit is used for measuring the saturation voltage drop of the first IGBT tube and/or the saturation voltage drop of the second IGBT tube. When the measuring unit measures the saturation voltage drop of the first IGBT tube and/or the saturation voltage drop of the second IGBT tube, the measuring unit is not connected to the collector electrode of the IGBT tube through the slide table, and extra parasitic resistance corresponding to the slide table is not introduced into the measuring loop, so that the accuracy of the finally measured saturation voltage drop of the first IGBT tube and/or the finally measured saturation voltage drop of the second IGBT tube can be ensured.
The foregoing description is only of the preferred embodiments of the present application and is not intended to limit the same, but rather, various modifications and variations may be made by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.
It will be evident to those skilled in the art that the present application is not limited to the details of the foregoing illustrative embodiments, and that the present application may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive, the scope of the application being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (8)
1. The measuring system is characterized by comprising a measuring unit and a wafer, wherein the wafer comprises a first IGBT tube and a second IGBT tube, and the first IGBT tube and the second IGBT tube share a collector;
the measuring unit is respectively connected with the emitter of the first IGBT tube, the grid electrode of the first IGBT tube, the emitter of the second IGBT tube and the grid electrode of the second IGBT tube;
the measuring unit is used for measuring the saturation voltage drop of the first IGBT tube and/or the saturation voltage drop of the second IGBT tube;
the measuring unit comprises a first electric signal application end, a second electric signal application end, a third electric signal application end, a fourth connection end, a first measuring end and a second measuring end;
the first electric signal application end is connected to the grid electrode of the first IGBT tube, the second electric signal application end is connected to the grid electrode of the second IGBT tube, the third electric signal application end is connected to the emitter electrode of the second IGBT tube, the fourth connection end is connected to the emitter electrode of the first IGBT tube, the first measurement end is connected to the emitter electrode of the first IGBT tube, and the second measurement end is connected to the emitter electrode of the second IGBT tube;
the measuring unit is used for applying a first electric signal to the grid electrode of the first IGBT tube through the first electric signal application end so as to conduct the emitter electrode and the collector electrode of the first IGBT tube;
the measuring unit is used for applying a second electric signal to the grid electrode of the second IGBT tube through the second electric signal application end so as to conduct the emitter electrode and the collector electrode of the second IGBT tube;
the measuring unit is used for applying a third current signal to the emitter of the second IGBT through the third electric signal application end;
the measuring unit is further used for measuring and obtaining a fusion pressure drop through the first measuring end and the second measuring end, and obtaining a saturation pressure drop of the first IGBT tube and/or a saturation pressure drop of the second IGBT tube based on the fusion pressure drop;
the fusion voltage drop is a voltage drop between the emitter of the second IGBT tube and the emitter of the first IGBT tube when the current of the emitter of the second IGBT tube and the current of the emitter of the first IGBT tube are identical to the third current signal.
2. The IGBT saturation voltage drop measurement system of claim 1 wherein the saturation voltage drop of the first IGBT tube and/or the saturation voltage drop of the second IGBT tube is one half of the merged voltage drop.
3. The IGBT saturation voltage drop measurement system according to claim 1, wherein the third electrical signal application terminal and the fourth connection terminal of the measurement unit are each provided with a current sampler for collecting a current of the emitter of the second IGBT tube and a current of the emitter of the first IGBT tube.
4. The IGBT saturation voltage drop measurement system of claim 1 wherein the first IGBT tube and the second IGBT tube are the same type of IGBT tube.
5. The IGBT saturation voltage drop measurement system of claim 1 wherein the first IGBT tube and the second IGBT tube are different types of IGBT tubes.
6. A method for measuring the saturation voltage drop of an IGBT, applied to the measuring system according to any one of claims 1 to 5, the method comprising:
the measuring unit applies a first electric signal to the grid electrode of the first IGBT tube so as to conduct the emitter electrode and the collector electrode of the first IGBT tube;
the measuring unit applies a second electric signal to the grid electrode of the second IGBT tube so as to lead the emitter electrode and the collector electrode of the second IGBT tube to be conducted;
the measuring unit applies a third current signal to the emitter of the second IGBT tube;
the measurement unit is used for measuring and obtaining a fusion voltage drop, and obtaining a saturation voltage drop of the first IGBT tube and/or a saturation voltage drop of the second IGBT tube based on the fusion voltage drop;
the fusion voltage drop is a voltage drop between the emitter of the second IGBT tube and the emitter of the first IGBT tube when the current of the emitter of the second IGBT tube and the current of the emitter of the first IGBT tube are identical to the third current signal.
7. The method for measuring an IGBT saturation voltage drop according to claim 6, wherein the first electrical signal is identical to the second electrical signal when the first IGBT tube and the second IGBT tube are the same type of IGBT tube.
8. The method of measuring an IGBT saturation voltage drop according to claim 6, wherein the first electrical signal is opposite to the second electrical signal when the first IGBT tube and the second IGBT tube are different types of IGBT tubes.
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