CN212845732U - IGBT testing arrangement with saturation conduction voltage drop test circuit - Google Patents
IGBT testing arrangement with saturation conduction voltage drop test circuit Download PDFInfo
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- CN212845732U CN212845732U CN202020425534.XU CN202020425534U CN212845732U CN 212845732 U CN212845732 U CN 212845732U CN 202020425534 U CN202020425534 U CN 202020425534U CN 212845732 U CN212845732 U CN 212845732U
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Abstract
The utility model relates to a IGBT testing arrangement with saturation conduction voltage drop test circuit, include: a substrate; the master controller is arranged on the substrate; the grid threshold voltage test circuit is connected with the master controller and is used for being connected with an IGBT module to be tested; the collector-emitter cut-off current test circuit is connected with the master controller and is used for being connected with an IGBT module to be tested; and the saturated conduction voltage drop test circuit is connected with the master controller and is used for being connected with an IGBT module to be tested. The IGBT testing device is beneficial to simultaneously testing a plurality of IGBT modules to be tested or testing a plurality of IGBT modules to be tested, thereby comprehensively testing the gate threshold voltage, the collector-emitter current and the saturation conduction voltage drop of the IGBT modules to be tested.
Description
Technical Field
The utility model belongs to the technical field of the IGBT, concretely relates to IGBT testing arrangement with saturation conduction voltage drop test circuit.
Background
In recent years, with the continuous promotion of clean energy construction in China, high-power IGBT and FRD power semiconductor devices are more and more widely used in power electronic equipment and power conversion, and especially in the industries of extra-high voltage direct current transmission, flexible direct current transmission systems, electric automobiles, high-speed rails and the like, the demand for the high-power IGBT semiconductor devices is more and more increased. The quality detection problem of high-capacity IGBT modules with various specifications is more and more prominent.
In the prior art, a comprehensive test means for a high-power IGBT element is lacked, so that the difficulty in monitoring the operation of power electronic equipment is caused, the comprehensive state tracking work of the equipment in operation is difficult to realize, and great hidden dangers are brought to the long-term safe and stable operation of the equipment.
Because development, development and maintenance personnel of the power electronic equipment and operation and maintenance personnel lack corresponding detection and test means to test various parameter indexes of the tested components, the research and development of the power electronic equipment are seriously restricted, and the localization process of the power electronic device is also restricted.
Accordingly, there is a need for a solution that overcomes or at least alleviates at least one of the above-mentioned deficiencies of the prior art.
Disclosure of Invention
An object of the utility model is to provide a IGBT testing arrangement with saturation conduction voltage drop test circuit, this IGBT testing arrangement are favorable to gate threshold voltage, collection emitter current and the saturation conduction voltage drop of the comprehensive test IGBT module that awaits measuring.
In order to achieve the above object, the utility model adopts the following technical scheme: an IGBT testing device having a saturation conduction voltage drop testing circuit, the IGBT testing device comprising:
a substrate;
the master controller is arranged on the substrate;
the grid threshold voltage test circuit is connected with the master controller and is used for being connected with a first IGBT module to be tested;
the collector-emitter cut-off current test circuit is connected with the master controller and is used for being connected with a second IGBT module to be tested; and
the saturated conduction voltage drop test circuit is connected with the master controller and is used for being connected with a third IGBT module to be tested;
the master controller is used for selectively controlling one or more of the grid threshold voltage test circuit, the collector-emitter cut-off current test circuit and the saturation conduction voltage drop test circuit to work;
the grid threshold voltage test circuit is used for detecting the grid threshold voltage of the first IGBT module to be tested connected with the grid threshold voltage test circuit and transmitting the result to the master controller;
the collector-emitter cut-off current test circuit is used for detecting the collector-emitter current of the second IGBT module to be tested connected with the collector-emitter cut-off current test circuit and transmitting the result to the master controller;
the saturation conduction voltage drop test circuit is used for detecting the saturation conduction voltage drop of the third IGBT module to be tested connected with the saturation conduction voltage drop test circuit and transmitting the result to the master controller.
Further, the gate threshold voltage test circuit, the collector-emitter cut-off current test circuit and the saturation conduction voltage drop test circuit are all arranged on the substrate.
Further, at least two isolation plates are arranged on the substrate, each isolation plate divides the substrate into three accommodation areas, and each accommodation area is used for accommodating one of the gate threshold voltage test circuit, the collector-emitter cut-off current test circuit and the saturation conduction voltage drop test circuit; the overall controller is disposed in any one of the three accommodation areas.
Further, the IGBT testing device further comprises a temperature adjusting device, the temperature adjusting device is arranged on the isolation board, and the temperature adjusting device is used for adjusting and controlling the temperature of the accommodating area.
Further, the temperature adjusting device includes:
a cooling source assembly disposed on the separator plate, the cooling source assembly including a cooling source output and a cooling source input; and
the pipeline, the pipeline sets up on the division board, pipeline on every division board has an input and an output, the input of every pipeline with the cooling source output is connected, the output with the cooling source input is connected, cooling source subassembly is used for providing the cold source for each pipeline.
Further, the cooling source assembly includes:
a water tank in which a cooling liquid is disposed; and
a water pump installed on the water tank and used for pumping out the cooling liquid in the water tank.
Furthermore, the water pump is connected with the master controller and is used for being controlled by the master controller to work.
Further, the temperature adjusting device further comprises a heater, the heater is arranged on a pipeline of one or each isolation plate and connected with the master controller, and the heater is used for receiving instructions of the master controller and heating cooling liquid passing through the pipeline.
Furthermore, the IGBT testing device further comprises temperature sensors, wherein the temperature sensors are arranged on the isolation boards and connected with the master controller, and are used for detecting the temperature of the isolation boards and transmitting the temperature to the master controller.
Further, the IGBT testing device further comprises an outer shell, and the substrate, the master controller, the grid threshold voltage testing circuit, the collector-emitter cut-off current testing circuit and the saturation conduction voltage drop testing circuit are arranged inside the outer shell.
Compared with the prior art, the utility model discloses following beneficial effect has: the IGBT testing device can be used for testing a plurality of IGBT modules to be tested simultaneously or testing one IGBT module to be tested in multiple ways, so that the grid threshold voltage, the collector-emitter current and the saturation conduction voltage drop of the IGBT module to be tested are comprehensively tested, and the IGBT testing device has the advantages of being stable and reliable in work and free from interference of high-voltage, high-current and other strong electromagnetic fields.
Drawings
Fig. 1 is a block diagram of an IGBT testing apparatus according to an embodiment of the present invention.
Fig. 2 is a circuit diagram of a gate threshold voltage test circuit according to an embodiment of the present invention.
Fig. 3 is a circuit diagram of a gate threshold voltage test circuit according to another embodiment of the present invention.
Fig. 4 is a circuit diagram of a collector-emitter cutoff current test circuit according to an embodiment of the present invention.
Fig. 5 is a schematic circuit diagram of a saturation conduction voltage drop test circuit according to an embodiment of the present invention.
Fig. 6 is a schematic structural diagram of the housing in the embodiment of the present invention.
Fig. 7 is a schematic structural diagram of a substrate in an embodiment of the present invention.
Detailed Description
In order to make the purpose, technical solution and advantages of the present invention clearer, the following will combine the drawings in the embodiments of the present invention to perform more detailed description on the technical solution in the embodiments of the present invention. In the drawings, the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The described embodiments are only some, but not all embodiments of the invention. The embodiments described below with reference to the drawings are exemplary and intended to be used for explaining the present invention, and should not be construed as limiting the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention. Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
In the description of the present invention, it is to be understood that the terms "central", "longitudinal", "lateral", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, and are used merely for convenience of description and for simplicity of description, and do not indicate or imply that the device or element so referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be considered as limiting the scope of the invention.
Fig. 1 is a schematic diagram of an IGBT testing apparatus according to an embodiment of the present invention. FIG. 2 is a circuit schematic of the gate threshold voltage test circuit shown in FIG. 1. Fig. 3 is a circuit diagram of a gate threshold voltage test circuit according to another embodiment of the present invention. Fig. 4 is a circuit schematic diagram of the collector-emitter off current test circuit shown in fig. 1. Fig. 5 is a circuit schematic diagram of the saturated conduction voltage drop test circuit shown in fig. 1. Fig. 6 is a schematic structural diagram of a housing of the IGBT testing apparatus shown in fig. 1. Fig. 7 is a schematic diagram of a substrate structure of the IGBT test apparatus shown in fig. 1.
The IGBT test apparatus shown in fig. 1 includes a substrate 1, a master controller 2, a gate threshold voltage test circuit 3, a collector-emitter cutoff current test circuit 4, and a saturation conduction voltage drop test circuit 5.
In the present embodiment, the overall controller 2 is provided on the substrate 1; the grid threshold voltage test circuit 3 is connected with the master controller 2 and is used for being connected with a first IGBT module 7 to be tested; the collector-emitter cut-off current test circuit 4 is connected with the master controller 2 and is used for being connected with a second IGBT module to be tested 13; the saturated conduction voltage drop test circuit 5 is connected with the master controller 2 and is used for being connected with a third IGBT module to be tested 17; wherein,
the master controller 2 is used for selectively controlling one or more of the grid threshold voltage test circuit 3, the collector-emitter cut-off current test circuit 4 and the saturation conduction voltage drop test circuit 5 to work;
the grid threshold voltage test circuit 3 is used for detecting the grid threshold voltage of the IGBT module to be tested connected with the grid threshold voltage test circuit and transmitting the result to the master controller;
the collector-emitter cut-off current test circuit 4 is used for detecting the collector-emitter current of the IGBT module to be tested connected with the collector-emitter cut-off current test circuit and transmitting the result to the master controller;
and the saturation conduction voltage drop test circuit 5 is used for detecting the saturation conduction voltage drop of the IGBT module to be tested connected with the saturation conduction voltage drop test circuit and transmitting the result to the master controller.
Referring to fig. 2, in the present embodiment, the gate threshold voltage test circuit 3 adopts an open-circuit solution, specifically, at a specified test temperature, the collector current Ic is adjusted to reach a specified value, and the gate voltage, i.e. the gate threshold voltage V, is measuredGE(th). The testing device adopts a high-precision operational amplifier circuit to design a 0-2A constant current source, and injects the constant current source into a collector-emitter of a tested device, and the constant current source can be in a range of 0-2AAnd adjusting the current value according to the specified value, displaying the test value and the waveform on the test interface, and making corresponding judgment. Test interface display value VGE(th) is an average value of output after stabilization-at the end (before the waveform starts to fall).
Referring to fig. 2, in the present embodiment, the gate threshold voltage test circuit includes a gate threshold first direct-current voltage source 6, a gate threshold second direct-current voltage source 8, and a gate threshold first voltmeter 9, and the gate threshold first direct-current voltage source is connected to the first to-be-tested IGBT module 7; the grid threshold second direct-current voltage source 8 is connected with the IGBT module 7; the grid threshold first voltmeter 9 is connected with the first to-be-tested IGBT module 7; the grid threshold first direct-current voltage source 6 is used for providing voltage for a collector-emitter of the first to-be-tested IGBT module 7; the grid threshold second direct-current voltage source 8 is used for providing voltage for a grid-emitter of the first to-be-tested IGBT module 7; the first grid threshold voltmeter 9 is used for measuring the grid threshold voltage and transmitting the result to the overall controller 2. In the present embodiment, the first IGBT module 7 to be tested is in an open state.
In an alternative embodiment, the gate threshold voltage test circuit further includes a gate threshold second voltmeter and a gate threshold first ammeter, the gate threshold second voltmeter is connected with the first to-be-tested IGBT module 7; the grid threshold first ammeter is connected with the first IGBT module 7 to be tested; the grid threshold second voltmeter is used for detecting the voltage of the collector-emitter of the first to-be-detected IGBT module 7; the grid threshold first ammeter is used for detecting the collector-emitter current of the first to-be-detected IGBT module 7.
Referring to fig. 3, in another embodiment, the gate threshold voltage test circuit adopts a short circuit solution, specifically, at a specified test temperature, adjusts the collector current Ic to reach a specified value, and measures the gate voltage, i.e. the gate threshold voltage VGE(th). The testing device adopts a high-precision operational amplifier circuit to design a 0-2A constant current source, injects the constant current source into a collector-emitter of a tested device, can adjust the current value within the range of 0-2A according to a specified value, and simultaneously displays a test value and a waveform on a test interface and makes corresponding judgment. Test interface display value VGE(th) is output steadyAverage value after setting-at the end (before the waveform starts to fall).
Referring to fig. 3, in the present embodiment, the gate threshold voltage test circuit includes a current source 6 and a voltmeter 9, the current source 6 is connected to the first IGBT module 7 to be tested and is configured to provide a current to a collector-emitter of the first IGBT module 7 to be tested, and the voltmeter 9 is connected to the first IGBT module 7 to be tested and is configured to detect a gate voltage. Wherein, the IGBT module to be tested is in a short-circuit state.
In the present embodiment, the collector-emitter cut-off current test circuit 4 adopts a short-circuit technique, specifically, as shown in fig. 4, a gate-emitter is short-circuited, a predetermined voltage Vce is applied to a collector-emitter at a predetermined test temperature, and the collector-emitter current Ic at this time is measured as ICES，ICESI.e. the collector-emitter off current. I isCESThe measurement is usually under the conditions of room temperature and junction temperature, and the collector leakage current can increase along with the increase of the junction temperature, so that the applied voltage is limited by the pulse width to reduce the increase of the junction temperature, and the influence of the leakage current on the junction temperature is reduced. I isCESUnder the conditions of room temperature and junction temperature, the leakage current changes from the mu A level to the mA level, in order to linearize the testing device, hardware stepping is adopted, and the method of automatic identification of a master controller meets the requirement of full-range testing precision. After the test is finished, the test interface displays the test value and the waveform and makes corresponding judgment, and the test value readings are average values after the output is stable and before the waveform is reduced.
Referring to fig. 4, in the present embodiment, the collector-emitter cut-off current test circuit 4 includes a collector-emitter cut-off current direct-current voltage source 10, a collector-emitter cut-off current voltmeter 11, and a collector-emitter cut-off current ammeter 12, where the collector-emitter cut-off current direct-current voltage source 10 is connected to the second IGBT module to be tested 13; the collector-emitter cut-off current voltmeter 11 is connected with the second IGBT module to be tested 13; the collector-emitter cut-off current ammeter 12 is connected with the second IGBT module to be tested 13; wherein, the emitter of the second IGBT module to be tested 13 is grounded; the collector-emitter cut-off current direct-current voltage source 10 is used for providing voltage for the second IGBT module to be tested 13; the collector-emitter cut-off current voltmeter 11 is used for detecting the voltage of the collector-emitter of the second IGBT module to be tested 13; the collector-emitter cut-off current ammeter 12 is used for detecting the collector-emitter current of the second IGBT module to be tested 13 and transmitting the result to the overall controller 2.
In the embodiment, the saturated conduction voltage drop test circuit applies a specified voltage V to the grid-emitter of the IGBT module to be testedGEA narrow pulse Ic which does not cause a significant additional junction temperature rise is applied to a device under test, and V at a prescribed timing is measuredCEIs namely VCesat(saturated conduction voltage drop). The key to this test is that the pulse Ic must be short enough to not cause a significant junction temperature rise. Therefore, the current source adopts an energy storage mode of a super capacitor, a digital control unit of the functional module sends square wave signals with controllable amplitude and adjustable width as current source control signals, and the output of the current source is controlled through a current negative feedback system to obtain pulse current with controllable pulse amplitude and adjustable width controlled by a computer. The current source can output current with duration of 2mS and amplitude of 3000A at most, and has the functions of overload protection, over-temperature protection and the like. After the test is finished, the test interface displays the test value and the waveform and makes corresponding judgment, and the test value readings are average values after the output is stable and before the waveform is reduced.
The saturation conduction voltage drop test circuit 5 shown in fig. 5 includes a current source 14, a voltmeter 15, a pulse device 16, and a power supply 18, wherein the current source 14 is connected to the pulse device 16 to supply a current (the current direction is the C-E direction in fig. 5) to the pulse device 16, the pulse device 16 is connected to a third IGBT module 17 to be tested to supply a pulse current with adjustable width to the third IGBT module 17 to be tested, the voltmeter 15 is connected in parallel to the IGBT module to be tested to detect the voltage condition of the IGBT module to be tested, and the power supply 18 is connected to the third IGBT module 17 to be tested to supply a voltage to the gate of the third IGBT module 17 to be tested.
In the present embodiment, the gate threshold voltage test circuit 3, the collector-emitter off current test circuit 4, and the saturation on voltage drop test circuit 5 are all provided on the substrate 1.
In other alternative embodiments, the various test circuits or test devices described above may be selectively disposed on the substrate.
In this embodiment, the general controller may be a PLC or a single chip microcomputer.
In this embodiment, the substrate may be a PCB board, or may be another type of substrate.
It can be understood that the IGBT modules 7, 13, and 17 to be tested may be the same IGBT module to be tested or different IGBT modules to be tested.
In the present embodiment, the substrate 1 is provided with the isolation board 66, and the isolation board 66 divides the substrate 1 into three accommodation regions, each of which is used for accommodating one of the gate threshold voltage test circuit, the collector-emitter off current test circuit and the saturation conduction voltage drop test circuit; the overall controller is disposed in any one of the three accommodation areas.
It is to be understood that the partition plate 66 may be a plate having a plurality of bends to divide the base plate into three receiving areas, or may be a plate having a plurality of partition plates, for example, five partition plates, each two adjacent partition plates forming a receiving space therebetween.
With this arrangement, the respective circuits can be prevented from interfering with each other.
In this embodiment, the IGBT testing apparatus further includes a temperature adjusting device 67, and the temperature adjusting device 67 is disposed on the isolation board and can adjust and control the temperature of the accommodating area.
In this way, the temperature of the respective accommodation areas can be regulated.
In an embodiment with a plurality of insulation plates, the temperature regulating device comprises a cooling source assembly and a pipeline, wherein the cooling source assembly is arranged on any one of the insulation plates, and comprises a cooling source output end and a cooling source input end; the pipeline is arranged on each isolation plate, the pipeline on each isolation plate is provided with an input end and an output end, the input end of each pipeline is connected with the output end of the cooling source, and the output end of each pipeline is connected with the input end of the cooling source; wherein, the cooling source component is used for providing a cold source for each pipeline.
In this way, the cooling of the respective accommodation spaces can be carried out.
In this embodiment, the cooling source assembly includes a water tank and a water pump, and cooling liquid is disposed in the water tank; the water pump is installed on the water tank and used for pumping out the cooling liquid in the water tank.
In this embodiment, the water pump is connected with the master controller for being controlled by the master controller to work.
In this embodiment, the cooling liquid may be water or other liquid.
In this way, user control may be facilitated.
The utility model discloses in, attemperator further includes the heater, and the heater setting is connected with total controller on the pipeline of one or each division board for receive total controller's instruction and for the cooling liquid heating through the pipeline.
In this way, the partition board can be heated not only in an environment with a low temperature, but also in an environment with a low temperature.
In this embodiment, the IGBT testing apparatus further includes a temperature sensor, where the temperature sensor is disposed on each isolation board and connected to the master controller, and is configured to detect the temperature of each isolation board and transmit the temperature to the master controller.
In this way, the user can be made aware of the temperature of the insulation board.
In other embodiments, the isolation bars may be arranged according to the number of the test circuits and the number of the test devices, so that only one test circuit or test device is accommodated in one accommodation region.
With this arrangement, the respective circuits can be prevented from interfering with each other.
Referring to fig. 6, in the present embodiment, the IGBT testing apparatus further includes an outer case 90, and the substrate, the overall controller, the gate threshold voltage testing circuit, the collector-emitter off-current testing circuit, and the saturation on-voltage drop testing circuit are disposed inside the outer case.
In other embodiments, the testing device and the testing circuit may be disposed entirely inside the outer casing, or partially inside the outer casing and partially outside the outer casing.
Each circuit can be protected from external environment interference by arranging the outer shell.
In this embodiment, the IGBT testing apparatus further includes a human-computer interaction module 91, and the human-computer interaction module 91 is disposed on the outer casing and connected to the main controller.
In this embodiment, the master controller communicates with the human-computer interaction module, and can transmit information acquired by the master controller from each circuit to the human-computer interaction module and display the information on the human-computer interaction module, and the human-computer interaction module can also provide a working instruction for the master controller, so that the master controller works according to the working instruction.
For example, the master controller may display one or more of the current condition of the collector and emitter of the IGBT module to be tested, the forward voltage characteristic condition, the gate threshold voltage, the overvoltage protection value, the judgment result of the overvoltage protection value judged by the master controller, and the waveform information on the human-computer interaction module.
The man-machine interaction module is adopted, so that a user can conveniently control the master controller to carry out various operations, and in addition, the information collected by the master controller can also be displayed through the man-machine interaction module.
The man-machine interaction module generally comprises an input device, a display device, a signal processing device and the like, wherein the signal processing device is communicated with the master controller and used for communicating data, the display device is communicated with the signal processing device and used for displaying information transmitted from the signal processing device, and the input device is communicated with the signal processing device and used for issuing instructions for the signal processing device.
For example, the human-computer interaction module can be a tablet computer or an upper computer.
In the present embodiment, the number of the temperature sensors is three, and one temperature sensor is provided for each accommodation area.
It is understood that the number of the temperature sensors may be changed as needed, for example, the same number of temperature sensors as the number of the accommodating spaces may be provided according to the number of the accommodating spaces, and one temperature sensor is provided in one accommodating space, each temperature sensor being connected to the overall controller.
In this way, it is possible to make it more clear to the user which circuit is malfunctioning.
In this embodiment, the IGBT testing apparatus further includes an alarm device 92, where the alarm device 92 is connected to the master controller, and the alarm device is configured to receive a control signal from the master controller and alarm according to the control signal.
It will be appreciated that the alarm device may be an audible alarm device, an alarm light, or a combination of both.
In this embodiment, the outer casing includes a casing body 901 and a protection window 902, and the casing body is provided with a casing hole; the protection window is hinged with the shell body so as to have an open state and a closed state, and in the closed state, the protection window closes the shell hole; in the open state, the external space of the case body communicates with the internal space of the case body through the case hole.
By adopting the mode, a user can conveniently maintain and replace each part inside the shell body.
In addition, the protective window is made of glass or other light-permeable materials, so that a user can observe the condition of the shell body when using the protective window.
Finally, it should be pointed out that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention in its corresponding aspects.
Claims (10)
1. An IGBT test device with a saturation conduction voltage drop test circuit, characterized in that the IGBT test device comprises:
a substrate (1);
the master controller (2), the master controller (2) is arranged on the substrate (1);
the grid threshold voltage testing circuit (3), the grid threshold voltage testing circuit (3) is connected with the master controller (2) and is used for being connected with a first IGBT module (7) to be tested;
the collector-emitter cut-off current testing circuit (4), the collector-emitter cut-off current testing circuit (4) is connected with the master controller (2) and is used for being connected with a second IGBT module to be tested (13); and
the saturation conduction voltage drop test circuit (5), the saturation conduction voltage drop test circuit (5) is connected with the master controller (2) and is used for being connected with a third IGBT module to be tested (17);
the master controller (2) is used for selectively controlling one or more of the grid threshold voltage test circuit (3), the collector-emitter cut-off current test circuit (4) and the saturation conduction voltage drop test circuit (5) to work;
the grid threshold voltage test circuit (3) is used for detecting the grid threshold voltage of the first IGBT module (7) to be tested connected with the grid threshold voltage test circuit and transmitting the result to the master controller (2);
the collector-emitter cut-off current test circuit (4) is used for detecting the collector-emitter current of the second IGBT module to be tested (13) connected with the collector-emitter cut-off current test circuit and transmitting the result to the master controller (2);
the saturated conduction voltage drop test circuit (5) is used for detecting the saturated conduction voltage drop of the third IGBT module (17) to be tested connected with the saturated conduction voltage drop test circuit and transmitting the result to the master controller (2).
2. The IGBT test device with the saturated conduction voltage drop test circuit according to claim 1, wherein the gate threshold voltage test circuit (3), the collector-emitter cutoff current test circuit (4) and the saturated conduction voltage drop test circuit (5) are all arranged on the substrate (1).
3. The IGBT testing device with the saturated conduction voltage drop testing circuit according to claim 1, characterized in that at least two isolation plates (66) are arranged on the substrate (1), each isolation plate (66) divides the substrate into three accommodation areas, and each accommodation area is used for accommodating one of the gate threshold voltage testing circuit (3), the collector-emitter cut-off current testing circuit (4) and the saturated conduction voltage drop testing circuit (5); the overall controller is disposed in any one of the three accommodation areas.
4. The IGBT testing device with the saturated conduction voltage drop testing circuit according to claim 3, characterized in that the IGBT testing device further comprises a temperature regulating device (67), wherein the temperature regulating device (67) is arranged on the isolation board (66) and is used for regulating and controlling the temperature of the accommodating area.
5. The IGBT test device with the saturated conduction voltage drop test circuit as claimed in claim 4, wherein the temperature regulating device comprises:
a cooling source assembly disposed on the separator plate, the cooling source assembly including a cooling source output and a cooling source input; and
the pipeline, the pipeline sets up on the division board, pipeline on every division board has an input and an output, the input of every pipeline with the cooling source output is connected, the output with the cooling source input is connected, cooling source subassembly is used for providing the cold source for each pipeline.
6. The IGBT test device with saturated conduction voltage drop test circuit of claim 5, wherein the cooling source assembly comprises:
a water tank in which a cooling liquid is disposed; and
a water pump installed on the water tank and used for pumping out the cooling liquid in the water tank.
7. The IGBT testing device with the saturated conduction voltage drop testing circuit as claimed in claim 6, wherein the water pump is connected with the master controller and is used for being controlled by the master controller to work.
8. The IGBT testing device with the saturated conduction voltage drop testing circuit as claimed in claim 5, wherein the temperature regulating device further comprises a heater, the heater is arranged on the pipeline of one or each isolation plate and connected with the master controller, and is used for receiving the instruction of the master controller and heating the cooling liquid passing through the pipeline.
9. The IGBT testing device with the saturated conduction voltage drop testing circuit as claimed in claim 1, further comprising temperature sensors disposed on each isolation board and connected with the master controller for detecting the temperature of each isolation board and transmitting the temperature to the master controller.
10. The IGBT test device with the saturated conduction voltage drop test circuit according to claim 1, further comprising an outer housing (90), wherein the substrate, the general controller, the gate threshold voltage test circuit, the collector-emitter cutoff current test circuit and the saturated conduction voltage drop test circuit are arranged inside the outer housing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| CN117092478A (en) * | 2023-10-18 | 2023-11-21 | 成都高投芯未半导体有限公司 | IGBT saturation voltage drop measurement system and method |
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| CN117092478A (en) * | 2023-10-18 | 2023-11-21 | 成都高投芯未半导体有限公司 | IGBT saturation voltage drop measurement system and method |
| CN117092478B (en) * | 2023-10-18 | 2023-12-19 | 成都高投芯未半导体有限公司 | IGBT saturation voltage drop measurement system and method |
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