CN215415735U

CN215415735U - Electrical characteristic testing device for switch component on wafer

Info

Publication number: CN215415735U
Application number: CN202121413503.3U
Authority: CN
Inventors: 林氦; 邓志江; 盛况; 郭清
Original assignee: Shaoxing Technology Venture Capital Co ltd; Shaoxing Microelectronics Research Center Of Zhejiang University; Zhejiang University ZJU
Current assignee: Shaoxing Technology Venture Capital Co ltd; Shaoxing Microelectronics Research Center Of Zhejiang University; Zhejiang University ZJU
Priority date: 2021-06-24
Filing date: 2021-06-24
Publication date: 2022-01-04
Anticipated expiration: 2031-06-24

Abstract

The invention relates to a structure of an electrical characteristic testing device of a switch component on a wafer, which relates to a wafer level testing technology, wherein a switch component connected with the switch component to be tested in parallel is conducted through control, a first electrode of the conducted switch component is electrically communicated with a second electrode, the first electrode of the switch component to be tested is electrically communicated with the second electrode of the conducted switch component, a second probe is in contact with the second electrode of the conducted switch component and is equivalent to be in contact with the first electrode of the switch component to be tested, and the first probe is in contact with the second electrode of the switch component to be tested simultaneously, so that the electrical characteristic of the switch component to be tested can be tested through the first probe and the second probe, and the electrical characteristic testing path of the switch component to be tested is shortened because the first probe and the second probe are probes respectively corresponding to the switch component to be tested and the second electrode of the switch component to be tested, the parasitic inductance is greatly reduced, and the structure of the testing device does not need to be changed.

Description

Electrical characteristic testing device for switch component on wafer

Technical Field

The invention relates to a wafer level testing technology, in particular to an electrical characteristic testing device of a switch component on a wafer.

Background

In semiconductor integrated circuit technology, various components in a semiconductor integrated circuit are formed on a wafer by a semiconductor integrated circuit manufacturing process. After the wafer is manufactured, wafer testing is very important, and the testing equipment tests the electrical characteristics of the components by contacting with the external contact electrodes of the components so as to judge whether the components on the wafer meet the factory standards. After the electrical characteristic test is completed, each component is divided by a cutting machine, and then the packaging and the selling are completed, so the electrical characteristic test is very important.

Disclosure of Invention

The invention provides a device for testing electrical characteristics of a switch component on a wafer, which is characterized by comprising: the wafer is arranged on the wafer chuck, wherein the wafer comprises a plurality of switch components, the switch components comprise first electrodes and second electrodes, the first electrodes of the switch components are connected with each other and located on the first surface of the wafer, the wafer chuck supports the wafer through the first surface of the wafer, the second electrodes of the switch components are located on the second surface of the wafer, the second surface of the wafer and the first surface of the wafer are opposite to each other, and the switch components can enable the first electrodes to be electrically communicated with the second electrodes through the control of a switch control signal; the probe card is provided with a plurality of probes on one side, facing the second surface of the wafer, wherein one first probe is contacted with the second electrode of one first switch component in the switch components, and one second probe is contacted with the second electrode of one second switch component in the switch components; and the switching element driving circuit is connected with the plurality of switching elements on the wafer and is used for outputting the switching control signals.

Further, when testing the electrical characteristics of the first switching element, the switching control signal controls at least one second switching element to be in a conductive state, reads signals output from the first probe and the second probe, and obtains the electrical characteristics of the first switching element according to the signals output from the first probe and the second probe.

Furthermore, the first probe and the second probe are located in the area of the probe card directly facing the wafer.

Furthermore, the second switch component is a switch component which is arranged on the wafer and adjacent to the first switch component.

Furthermore, the second switch component is a switch component which is arranged on the wafer and is adjacent to the first switch component in the X-axis or Y-axis direction.

Furthermore, the second switch component is a switch component which is arranged on the wafer and is adjacent to the first switch component in an oblique angle.

Furthermore, at least one switch component is arranged between the second switch component and the first switch component.

Furthermore, the number of the conducted second switch components is multiple, the second probe comprises multiple probes, and the multiple second probes are in one-to-one corresponding contact with the second electrodes of the conducted second switch components.

Drawings

FIG. 1 is a diagram of a typical wafer test system.

Fig. 2 is a schematic circuit diagram of a MOSFET on a wafer.

Fig. 3 is a schematic diagram of an apparatus for testing electrical characteristics of a switching device on a wafer according to an embodiment of the invention.

Fig. 4 is a schematic diagram of distribution of switching devices on a wafer.

Fig. 5 is a schematic circuit diagram of a switching device on a wafer.

Detailed Description

The technical solutions in the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.

It is to be understood that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity, and the same reference numerals denote the same elements throughout. It will be understood that when an element or layer is referred to as being "on" …, "adjacent to …," "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on …," "directly adjacent to …," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.

Spatial relationship terms such as "under …", "under …", "below", "under …", "above …", "above", and the like, may be used herein for ease of description to describe the relationship of one element or feature to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "below …" and "below …" can encompass both an orientation of up and down. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.

Referring to fig. 1, fig. 1 is a schematic structural diagram of a typical wafer test system. The wafer test system includes a wafer test apparatus, as shown in fig. 1, the wafer test apparatus generally includes a probe card 110, and a plurality of probes, such as a first probe 121, a second probe 122, and a third probe 123, are disposed on one side of the probe card 110. The wafer test system further includes a prober for fixing the wafer 210 to the wafer chuck 220, performing an electrical characteristic test by bringing a probe into contact with an electrode of a device on the wafer 210, and measuring a characteristic of the device by applying a current or a voltage to the electrode of each device when performing the electrical characteristic test.

Devices such as MOSFETs (field effect transistors), IGBTs (Insulated Gate Bipolar transistors) and the like are commonly used in semiconductor integrated circuits, and generally include an electrode (often referred to as a chip surface electrode) on the second surface of a wafer and an electrode (often referred to as a chip back surface electrode) on the first surface of the wafer. As shown in fig. 1, for a MOSFET, the second side of the wafer includes a source (S) and a gate (G), and the drain (D) is usually disposed on the first side of the wafer, where the second side of the wafer and the first side of the wafer are opposite sides of the wafer. In order to test the electrical characteristics of a device with electrodes formed on both sides of a wafer, a conductive supporting surface 221 is arranged on a wafer chuck 220, the supporting surface 221 contacts with the first side of the wafer to lead out the electrode (such as the drain of the MOSFET) on the first side of the wafer to the outside of the contact area between the wafer 210 and the wafer chuck 220, as shown in fig. 1, the drain D is led out to a position 2211 of the supporting surface 221, the position 2211 is located outside the contact area between the wafer 210 and the wafer chuck 220, so that a third probe 123 corresponding to the drain can electrically contact with the drain D on the first side of the wafer through the contact position 2211, and the first probe 121 contacts with the source S on the second side of the wafer to test the dynamic performance of the MOSFET, in addition, the second probe 122 may contact the gate G of the MOSFET, so that the test path on the wafer and the probe card is shown by the dotted line in fig. 1, and the circuit test path is shown by the dotted line in the schematic circuit diagram of the MOSFET on the wafer in fig. 2, because the drain of the MOSFET needs to be led out of the contact area between the wafer 210 and the wafer chuck 220, and the third probe 123 corresponding to the drain needs to be disposed at the edge of the probe card 110 to electrically connect the third probe 123 and the drain of the MOSFET, the length of the test path is increased, and the parasitic inductance is relatively large, so that the measurement error of high-frequency measurement and dynamic measurement is generated, and the wafer inspection cannot be properly performed with the required accuracy.

In order to test electrical characteristics of a device having electrodes formed on both sides of a wafer, an embodiment of the present invention provides an electrical characteristic testing apparatus for a switch device on a wafer, and specifically, refer to fig. 3, fig. 3 is a schematic diagram of the electrical characteristic testing apparatus for the switch device on the wafer according to an embodiment of the present invention, and refer to fig. 4 and fig. 5, fig. 4 is a schematic diagram of distribution of the switch device on the wafer, and fig. 5 is a schematic diagram of a circuit of the switch device on the wafer. Specifically, an electrical characteristic testing apparatus for a switch device on a wafer according to an embodiment of the present invention includes: a wafer 310 disposed on the wafer chuck 320, wherein the wafer 310 includes a plurality of switching devices, each of the plurality of switching devices includes a first electrode and a second electrode, the first electrodes of the plurality of switching devices are connected to each other, the first electrodes of the plurality of switching devices are located on a first surface of the wafer, the wafer chuck 320 supports the wafer 310 through the first surface of the wafer, the second electrodes of the plurality of switching devices are located on a second surface of the wafer, the second surface of the wafer and the first surface of the wafer are opposite surfaces of the wafer, and the plurality of switching devices are controlled by a switching control signal such that the first electrodes are electrically connected to the second electrodes; a probe card 330, wherein a plurality of probes are disposed on a side of the probe card 330 facing the second surface of the wafer, a first probe 331 contacts a second electrode of a first switching device of the plurality of switching devices, and a second probe 332 contacts a second electrode of a second switching device of the plurality of switching devices; and the switch component driving circuit 400 is connected with the plurality of switch components on the wafer and used for outputting the switch control signals.

In one embodiment, when testing the electrical characteristics of the first switching element, the switching control signal controls such that at least one second switching element is in a conductive state, reads signals output from the first probe 331 and the second probe 332, and obtains the electrical characteristics of the first switching element from the signals output from the first probe 331 and the second probe 332.

Thus, the second switch component is controlled to be in a conducting state, the first electrode of the second switch component is electrically communicated with the second electrode, and because the first electrodes of the plurality of switch components are connected with each other, the first electrode of the first switch component is electrically communicated with the second electrode of the second switch component, the second probe is contacted with the second electrode of the second switch component equivalently to be contacted with the first electrode of the first switch component, and the first probe is contacted with the second electrode of the first switch component, so that the electrical characteristics of the first switch component can be tested through the first probe and the second probe, because the first probe and the second probe respectively correspond to the second electrodes of the first switch component and the second switch component on the second surface of the wafer, and the probe is arranged on the side of the probe card facing the second surface of the wafer, the probe does not need to be arranged outside the contact area of the wafer 310 and the wafer chuck 320, and the first electrode does not need to be led out through the conductive bearing surface 321 on the wafer chuck 320, so that the electrical characteristic test path of the first switch component is shortened, and the specific test path is from the first probe 331 to the second electrode of the first switch component, then to the second electrode of the second switch component, and then to the second probe 332, as shown by the dotted line in fig. 3, or as shown by the dotted line 600 in fig. 5. In the testing method, the structure of the testing device is not required to be changed, only a switch component on the wafer is required to be conducted, and the first electrode of the switch component is electrically connected with the first electrode of the switch component to be tested, so that the electrical characteristics of the switch component to be tested can be tested by testing the parameters between the second electrode of the switch component and the second electrode of the switch component to be tested.

Further, as shown in FIG. 3, the first probes 331 and the second probes 332 are located in the area of the probe card 330 directly facing the wafer 310, so that the path can be further tested.

First electrodes of a plurality of switch components on the wafer 310 are connected to each other, and the plurality of switch components can electrically communicate with the second electrode through control of a switch control signal, that is, the plurality of switch components on the wafer 310 are connected in parallel. Specifically, in an embodiment, as shown in fig. 3, the plurality of switching devices are MOSFETs (field effect transistors), the first electrode is a drain (D, e.g., the drain D11 of the first switching device, the drain D12 of the second switching device), the second electrode is a source (S, e.g., the source S11 of the first switching device, the source S12 of the second switching device), and the MOSFETs further have a third electrode which is a gate (G, e.g., the gate G11 of the first switching device, the gate G12 of the second switching device), the third electrode is located on the second side of the wafer, and the gate (G) of the MOSFET receives a switching control signal to turn on the MOSFET, so that the drain (D) and the source (S) of the MOSFET are electrically connected. As described above, the gate of a MOSFET is turned on by receiving a switching control signal, and the electrical characteristics of the MOSFET under test are tested by testing the electrical parameter between the source of the MOSFET and the source of the MOSFET under test. Specifically, in an embodiment, the plurality of switching elements are IGBTs (Insulated Gate Bipolar transistors), the first electrode is a collector (C), the second electrode is an emitter (E), the plurality of IGBTs further have a third electrode which is a Gate (G), the third electrode is located on the second side of the wafer, and the Gate (G) of the IGBT can receive a switching control signal to turn on the IGBT, so that the collector (C) and the emitter (E) of the IGBT are electrically connected. As described above, the gate (G) of an IGBT is turned on by receiving a switching control signal, and the electrical characteristics of the IGBT to be tested are tested by testing the electrical parameters between the emitter of the IGBT and the emitter of the IGBT to be tested. Specifically, in an embodiment, the plurality of switching elements are diodes, the first electrode is an anode, the second electrode is a cathode, or the first electrode is a cathode and the second electrode is an anode, and the diodes can be turned on by receiving a positive voltage, that is, the switching control signal is a positive voltage applied between the anode and the cathode of the diodes, so that the anode and the cathode of the diodes are electrically connected. As described above, the electrical characteristics of the diode under test are tested by testing the electrical parameters between the anode or cathode of the conducting diode and the anode or cathode of the diode under test.

Specifically, in an embodiment, referring to fig. 4, a plurality of switch devices on the wafer 310 are arranged on the wafer adjacent to each other, as described in fig. 4, three rows and three columns of switch devices are arranged adjacent to each other, and during testing, the switch devices arranged on the wafer adjacent to the switch device to be tested are controlled to be turned on, and the electrical characteristics of the switch device to be tested are tested by testing the electrical parameter between the second electrode of the turned-on switch device and the second electrode of the switch device to be tested. Since the second electrode of the switching device adjacent to the switching device to be tested is closer to the second electrode of the switching device to be tested, the test path can be shortened to the maximum extent, as shown in fig. 4, the electrical characteristics of the switching device to be tested M11 are pretested, the switching device M12 adjacent to the switching device M11 on the wafer can be controlled to be turned on, and the electrical characteristics of the switching device M11 are tested by testing the electrical parameters between the second electrode of the switching device M11 and the second electrode of the switching device M12. Preferably, the switching devices adjacently arranged in the X-axis or Y-axis direction between the wafer and the switching device to be tested may be selected to be turned on to shorten the testing path to the maximum extent, for example, the switching device M21 may be selected to be turned on to test the electrical characteristics of the switching device M11. Or, the switching elements arranged adjacent to the switching element to be tested at an oblique angle on the wafer can be selected to be conducted to shorten the testing path to the maximum extent, for example, the switching element M22 can be selected to be conducted to test the electrical characteristics of the switching element M11.

In addition, as the feature size of the semiconductor device is continuously reduced along with the development of the semiconductor technology, the size of the semiconductor device integrated on the wafer is continuously reduced, the distance between the second electrodes of two adjacent switching devices is generally very small, therefore, if the second electrodes of two adjacent switching devices are tested to test the electrical characteristics of the switching device to be tested, the recognition rate of the probe is very high, moreover, some switch components have high voltage resistance (such as several kilovolts), two adjacent probes are close and bear high voltage, and certain technical problems are also faced, therefore, the switch component separated from the test switch component by at least one switch component can be preferably selected to be conducted to test the electrical characteristics of the test switch component, for example, the electrical characteristics of the switching element M11 may be tested by selectively turning on the switching elements M13, M31, M23, and the like.

In an embodiment of the present invention, one of the plurality of switch components on the wafer may be selected to be turned on, and the electrical characteristics of the switch component to be tested are tested by testing the electrical parameter between the second electrode of the switch component and the second electrode of the switch component to be tested, and as described above, the electrical characteristics of the switch component M11 may be tested by controlling the switch component M12, the switch component M21, the switch component M22, the switch component M13, the switch component M31, or the switch component M23 of the wafer to be turned on. However, the switching devices on the wafer have a certain defect rate, in order to improve the efficiency and speed of the test, the plurality of switching devices on the wafer can be selected to be simultaneously conducted, the electrical characteristics of the switching devices to be tested can be tested by testing the electrical parameters between the second electrode of the switching device to be tested and the second electrodes of the plurality of switching devices, for example, the electrical characteristics of the switching device to be tested can be tested by controlling to simultaneously conduct the switching devices M12, M21, M22, M13, M31 and M23 of the wafer and testing the electrical characteristics of the switching device M11 by testing the electrical parameters between the second electrodes S12, S21, S22, S13, S31 and S23 and the second electrode S11 of the switching device to be tested M11, specifically, the second probes include a plurality of probes, wherein the plurality of second probes are in one-to-one contact with the second electrodes of the plurality of conducting switching devices, so that the fault of any conducting switching device does not affect the test, and a plurality of switch components are conducted simultaneously to connect the test paths in parallel, so that parasitic inductance can be further reduced. For example, it may be extended to turn on the adjacent 4 or 8 switching elements.

In an embodiment of the present invention, the above-mentioned embodiments of the positions of the conducting switch components and the number of conducting switch components can be used in combination.

In an embodiment of the invention, the switching device driving circuit 400 is an isolation driving circuit.

In an embodiment of the present invention, there is also provided a method for testing electrical characteristics of a switching device on a wafer, wherein the wafer includes a plurality of switching devices, each of the switching devices includes a first electrode and a second electrode, and the first electrodes of the switching devices are connected to each other, wherein:

when the electrical characteristics of a first switch component in the plurality of switch components are tested, controlling to enable at least one second switch component in the plurality of switch components to be conducted, and enabling a first electrode of the conducted second switch component to be electrically communicated with a second electrode; obtaining an electrical parameter between the second electrode of the first switching component and the second electrode of the second switching component to obtain an electrical characteristic of the first switching component.

So, make second switch components and parts be in the on-state through control, then the first electrode and the second electrode electricity of second switch components and parts communicate to because of the first electrode interconnect of a plurality of switch components and parts, then the first electrode of first switch components and parts communicates with the second electrode electricity of second switch components and parts, then can obtain the electrical characteristics of first switch components and parts through the electrical parameter between the second electrode of test first switch components and parts and second switch components and parts.

In an embodiment of the present invention, a testing apparatus is further provided, which can be seen from fig. 3, the testing apparatus includes a probe card 330, a plurality of probes are disposed on the probe card 330, the probe card 330 is moved such that the first probe 331 contacts the second electrode of the first switching device, the second probe 332 contacts the second electrode of the second switching device, and an electrical parameter between the first probe 331 and the second probe 332 is tested to obtain an electrical parameter between the second electrode of the first switching device and the second electrode of the second switching device, so as to obtain an electrical characteristic of the first switching device.

Further, in an embodiment, the testing apparatus further includes a wafer chuck 320, the wafer chuck 320 supports the wafer 310 through the first side of the wafer, and the first electrodes of the plurality of switching devices are all located on the first side of the wafer, and the second electrodes of the plurality of switching devices are all located on the second side of the wafer, where the second side of the wafer and the first side of the wafer are opposite to each other. Further, in one embodiment, the probes are disposed on a side of probe card 330 facing the second side of the wafer.

Further, in an embodiment, the testing apparatus further includes a switching device driving circuit 400, configured to output a switching control signal to a plurality of switching devices on the wafer, so as to control at least one second switching device of the plurality of switching devices to be turned on. Further, in an embodiment, the switching device driving circuit 400 is connected to the control terminals of the plurality of switching devices, and outputs the switching control signal to the control terminals of the plurality of switching devices. Further, in an embodiment, the control terminal of the switching device is located on the second side of the wafer.

In this way, the second probe contacts the second electrode of the second switch component equivalent to the first electrode of the first switch component, and the first probe contacts the second electrode of the first switch component, so that the electrical characteristics of the first switch component can be tested by the first probe and the second probe, because the first probe and the second probe respectively correspond to the second electrode of the first switch component and the second switch component on the second surface of the wafer, and the probe is arranged on the side of the probe card facing the second surface of the wafer, the probe does not need to be arranged outside the contact area of the wafer 310 and the wafer chuck 320, and the first electrode does not need to be led out through the conductive supporting surface 321 on the wafer chuck 320, thereby shortening the electrical characteristic testing path of the first switch component, specifically, the testing path is from the first probe 331 to the second electrode of the first switch component, Then to the second electrode of the second switching element and then to the second probe 332, as shown by the dashed line in fig. 3, or as shown by the dashed line 600 in fig. 5, the test path length is greatly shortened compared to the prior art, and the parasitic inductance is greatly reduced, so that the measurement errors of high-frequency measurement and dynamic measurement are reduced, and the wafer inspection is performed with higher precision. In the testing method, the structure of the testing device is not required to be changed, only a switch component on the wafer is required to be conducted, and the first electrode of the switch component is electrically connected with the first electrode of the switch component to be tested, so that the electrical characteristics of the switch component to be tested can be tested by testing the parameters between the second electrode of the switch component and the second electrode of the switch component to be tested. Further, as shown in FIG. 3, the first probes 331 and the second probes 332 are located in the area of the probe card 330 directly facing the wafer 310, so that the path can be further tested.

In an embodiment, the first switch component and the second switch component may be arranged adjacently, for example, in the X-axis or Y-axis direction or in an oblique angle, and the specific principle is the same as that described above, and thus, the detailed description thereof is omitted here. In addition, in an embodiment, at least one switch component is spaced between the second switch component and the first switch component (i.e., the switch component to be tested), and the specific principle is the same as that described above, and is not described herein again.

In an embodiment, preferably, the number of the turned-on second switch devices is plural, and the specific principle is the same as that described above, and is not described herein again. The second probes include a plurality of second probes, wherein the plurality of second probes are in one-to-one contact with the second electrodes of the plurality of conducted switching elements, and the specific principle is the same as that described above, and is not described herein again.

In an embodiment of the present invention, the plurality of switching devices are MOSFETs (field effect transistors), the source (S) and the gate (G) are located on the second surface of the wafer, the drains are located on the first surface of the wafer, and the drains are connected together to test an electrical parameter between the source of the MOSFET to be tested and the source of the at least one MOSFET that is turned on, so as to obtain an electrical characteristic of the MOSFET to be tested. Because at least one MOSFET in the MOSFETs is conducted, the source electrode of the conducted MOSFET is equivalent to the drain electrode of the MOSFET to be tested, and therefore the electrical parameters between the source electrode of the MOSFET to be tested and the source electrode of the at least one MOSFET to be conducted are equivalent to the electrical parameters between the source electrode and the drain electrode of the MOSFET to be tested, and the electrical characteristics of the MOSFET to be tested can be obtained.

In an embodiment of the present invention, the plurality of switching elements are IGBTs (Insulated Gate Bipolar transistors), the emitter (E) and the Gate (G) are located on the second surface of the wafer, the collectors are located on the first surface of the wafer, the collectors are connected together, and the electrical parameters between the emitter of the IGBT to be tested and the emitter of the turned-on at least one IGBT are tested to obtain the electrical characteristics of the IGBT to be tested. Because at least one IGBT of the IGBTs is conducted, the emitter of the conducted IGBT is equivalent to the collector of the IGBT to be tested, and therefore the electrical parameters between the emitter of the IGBT to be tested and the emitter of the conducted IGBT to be tested are equivalent to the electrical parameters between the emitter and the collector of the IGBT to be tested, and the electrical characteristics of the IGBT to be tested can be obtained.

Specifically, in an embodiment, the plurality of switching elements are diodes, the first electrode is an anode, and the second electrode is a cathode, or the first electrode is a cathode and the second electrode is an anode, and the diodes can receive positive voltage conduction, so that the anodes of the diodes are electrically connected with the cathode. As described above, the electrical characteristics of the diode under test are tested by testing the electrical parameters between the anode or cathode of the conducting diode and the anode or cathode of the diode under test.

In an embodiment of the present invention, the at least one conducting switch device and the switch device to be tested are arranged adjacent to each other on the wafer. In an embodiment of the present invention, the at least one conducting switching device and the switching device to be tested are arranged on the wafer at an interval of the at least one switching device. Or in combination with the above embodiments, that is, there are a plurality of conducting switch components, some of which are arranged adjacent to the switch component to be tested on the wafer, and some of which are arranged at an interval of at least one switch component on the wafer.

In an embodiment of the invention, the electrical characteristic of the to-be-tested switch component is a dynamic characteristic of the to-be-tested switch component.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. An electrical characteristic testing device for a switch component on a wafer, comprising:

the wafer is arranged on the wafer chuck, wherein the wafer comprises a plurality of switch components, the switch components comprise first electrodes and second electrodes, the first electrodes of the switch components are connected with each other and located on the first surface of the wafer, the wafer chuck supports the wafer through the first surface of the wafer, the second electrodes of the switch components are located on the second surface of the wafer, the second surface of the wafer and the first surface of the wafer are opposite to each other, and the switch components can enable the first electrodes to be electrically communicated with the second electrodes through the control of a switch control signal;

the probe card is provided with a plurality of probes on one side, facing the second surface of the wafer, wherein one first probe is contacted with the second electrode of one first switch component in the switch components, and one second probe is contacted with the second electrode of one second switch component in the switch components; and

and the switching element driving circuit is connected with the plurality of switching elements on the wafer and is used for outputting the switching control signals.

2. An apparatus as claimed in claim 1, wherein when testing the electrical characteristics of the first switching device, the switching control signal controls at least a second switching device to be in a conducting state, reads the signals output from the first and second probes, and obtains the electrical characteristics of the first switching device according to the signals output from the first and second probes.

3. An apparatus as claimed in claim 1, wherein the first probe and the second probe are located in a region of the probe card directly facing the wafer.

4. An apparatus as claimed in claim 1, wherein the second switching device is a switching device disposed adjacent to the first switching device on the wafer.

5. The device for testing the electrical characteristics of a switch component on a wafer as claimed in claim 4, wherein the second switch component is a switch component arranged adjacent to the first switch component on the wafer in the X-axis or Y-axis direction.

6. An apparatus as claimed in claim 4, wherein the second switching device is a switching device disposed on the wafer at an oblique angle adjacent to the first switching device.

7. An apparatus as claimed in claim 1, wherein at least one switching device is spaced between the second switching device and the first switching device.

8. The apparatus of claim 2, wherein the number of the second conducting switch devices is plural, the second probes include a plurality of probes, and the plurality of second probes are in one-to-one corresponding contact with the second electrodes of the plurality of second conducting switch devices.